CN119855166A - Diamond diode based on polarized interface two-dimensional electron gas effect and preparation method thereof - Google Patents
Diamond diode based on polarized interface two-dimensional electron gas effect and preparation method thereof Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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Abstract
本发明涉及半导体器件的技术领域，具体涉及一种基于极化界面二维电子气效应的金刚石二极管及其制备方法，包括柔性基板，形成于柔性基板表面的金刚石衬底；沉积于金刚石衬底表面的AlN层；形成于金刚石衬底表面位于AlN层一端的阳极金属层；形成于AlN层表面的阴极电极层。本发明的基于极化界面二维电子气效应的金刚石二极管，在AlN薄膜层与金刚石之间构建出异质结构，形成了高迁移率的二维电子气(2DEG)，所述AlN薄膜层与金刚石形成极化表面，实现了金刚石的n型导电。
The present invention relates to the technical field of semiconductor devices, and in particular to a diamond diode based on polarization interface two-dimensional electron gas effect and a preparation method thereof, comprising a flexible substrate, a diamond substrate formed on the surface of the flexible substrate; an AlN layer deposited on the surface of the diamond substrate; an anode metal layer formed on the surface of the diamond substrate and located at one end of the AlN layer; and a cathode electrode layer formed on the surface of the AlN layer. The diamond diode based on polarization interface two-dimensional electron gas effect of the present invention constructs a heterostructure between the AlN film layer and the diamond to form a high-mobility two-dimensional electron gas (2DEG), and the AlN film layer and the diamond form a polarization surface to achieve n-type conductivity of the diamond.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a diamond diode based on a polarized interface two-dimensional electron gas effect and a preparation method thereof.
Background
Power semiconductor devices are an important class of electronic devices for controlling and regulating the transmission and distribution of electrical energy. They play a critical role in a variety of applications including power management, motor driving, energy conversion and power system control. Key technologies for power semiconductor devices include materials science, manufacturing processes, and electronic design. In order to improve the performance of power devices, researchers are continually looking for new semiconductor materials to achieve higher current densities and lower on-resistances. Innovations in the fabrication process are also critical to ensure device reliability and uniformity. In addition, electronic design plays a critical role in optimizing the performance and efficiency of the device.
Along with the development of electronic equipment, flexible electronic equipment is increasingly paid attention to, and only wearable products can be updated and improved continuously, so that the flexible electronic equipment rapidly enters various fields of human life and has wide application in the aspects of health detection, exercise assistance, human-computer interaction and the like. The future development potential of flexible electronics is huge, and most of current power semiconductor devices are concentrated on the research of hard substrates such as Si and the like, so that the application scene of the power devices is limited. The introduction of flexibility greatly expands the application scene of the power electronic device, so that the power electronic device plays a great role in national defense, military, information security and other aspects.
The application of wide bandgap semiconductor materials in the field of power semiconductors is very important for improving energy efficiency, reducing volume, increasing operating temperature and increasing power density. With the continuous progress of technology, the wide bandgap semiconductor material has wide application prospect in the field of power semiconductors. The wide forbidden band semiconductor materials such as silicon carbide and gallium nitride are developed rapidly at present, but some technical difficulties still exist, for example, the electron mobility of the silicon carbide material is low, the development of the silicon carbide material on high-performance devices has bottlenecks, the heat dissipation of the gallium nitride material is poor, and the integration degree is insufficient. Diamond belongs to a new generation of ultra-wide band gap semiconductor material, has some remarkable advantages in the semiconductor technology, and has a series of advantages of large band gap, high thermal conductivity, high carrier mobility, high carrier saturation velocity, good chemical stability and the like, so that the diamond becomes an attractive material choice in specific applications. Can provide a viable solution for high power, high temperature, high frequency and high voltage electronics.
Diamond-based diamond diodes suffer from defects and lattice imperfections, and the preparation of diamond single crystals often introduces some lattice defects and imperfections that can affect the performance and reliability of the device. For example, defects may cause current leakage or breakdown phenomena, thereby limiting the operating voltage range of the device. These lattice defects and imperfections can make diamond n-type conduction exceptionally difficult. Is an important factor influencing the development of diamond-based diamond diodes to high performance, and how to realize n-type conductivity of diamond, and eliminating lattice defects and incompleteness is a problem to be solved in order to optimize the characteristics of diamond devices. In view of the above, the present invention effectively solves the above problems by a two-dimensional electron gas effect-based diamond diode.
Disclosure of Invention
The invention aims to provide a two-dimensional electron gas (2 DEG) with high mobility based on a heterostructure constructed by an AlN film layer and a diamond substrate of a diamond diode based on a polarized interface two-dimensional electron gas effect.
The second purpose of the invention is to provide a preparation method of the diamond diode based on the polarized interface two-dimensional electron gas effect, which has simple preparation process and easy regulation and control.
One of the achievement purposes of the invention adopts the scheme that a diamond diode based on polarized interface two-dimensional electron gas effect,
Comprising a flexible substrate and a plurality of flexible substrates,
A diamond substrate formed on the surface of the flexible substrate;
an AlN layer deposited on the surface of the diamond substrate;
An anode metal layer formed on the surface of the diamond substrate and positioned at one end of the AlN layer;
And a cathode electrode layer formed on the AlN layer surface.
Preferably, the thickness of the flexible substrate is 1 μm-1mm, the thickness of the diamond substrate is 0.2 μm-10 μm, the thickness of the AlN layer is 10nm-3 μm, the thickness of the anode metal layer is 0.1 μm-1 μm, and the thickness of the cathode metal layer is 0.1 μm-1 μm.
Preferably, the flexible substrate is flexible glass or indium tin oxide.
Preferably, the anode metal layer and the cathode metal layer are aluminum layers or gold layers.
Preferably, the diamond substrate and the AlN layer construct a heterostructure, so that a two-dimensional electron gas with high mobility is formed, a polarized interface is formed, and n-type conductivity of the diamond is realized.
The scheme adopted by the invention for achieving the second purpose is that the preparation method of the diamond diode based on the polarized interface two-dimensional electron gas effect comprises the following steps:
preparing a diamond substrate on the surface of a flexible substrate;
Depositing an AlN layer on the surface of the diamond substrate by using an MBE process;
opening holes of the anode region of the diamond diode on the surface of the AlN layer by adopting a photoetching and etching method;
the anode metal layer and the cathode metal layer of the device are prepared by using photoetching and physical vapor deposition processes.
Preferably, the process parameters of depositing the AlN layer on the surface of the diamond substrate by adopting the MBE process are that the background vacuum degree is 10 -9-10-10 Torr, the working vacuum degree is that the stable working pressure is 10 -5-10-6 Torr after nitrogen/nitriding gas is introduced, the growth temperature is 750-950 ℃, the growth time comprises that an initial low-temperature buffer layer is 200-400 ℃ and a low-temperature AlN buffer layer with the thickness of 5-10nm is grown, the main AlN layer is 750-950 ℃ and grows to the target thickness, the growth rate is 0.5-2 mu m/h, the growth mode is a layered/island mixed mode, the growth rate is 0.1-0.5nm/s, and the annealing treatment is that the annealing treatment is carried out under the nitrogen atmosphere.
Preferably, the nitrogen type adopted for depositing the AlN layer on the surface of the diamond substrate by adopting the MBE process is 99.9999% high-purity nitrogen, the nitrogen plasma activation power is 300-450W, and the nitrogen flow is 0.5-1.5sccm.
Preferably, the AlN layer is deposited on the surface of the diamond substrate by MBE process in the form of an aluminum source of 99.9999% high-purity aluminum, the aluminum evaporation temperature is 850-950 ℃, and the aluminum beam flux is 1 x 10 -7-5*10-7 Torr.
Preferably, the deposition mode is at least one of chemical vapor deposition, microwave plasma chemical vapor deposition, thermal ion technology deposition, evaporation, sputtering, atomic layer deposition and physical vapor deposition.
The invention has the following advantages and beneficial effects:
According to the diamond diode based on the polarized interface two-dimensional electron gas effect, a heterostructure is constructed between the AlN thin film layer and the diamond, so that the two-dimensional electron gas (2 DEG) with high mobility is formed, the AlN thin film layer and the diamond form a polarized surface, and n-type conductivity of the diamond is realized.
The diamond diode based on the polarized interface two-dimensional electron gas effect has flexibility, and can greatly expand the application of the diamond device.
According to the preparation method disclosed by the invention, the AlN layer is deposited on the surface of the diamond layer by adopting an MBE process, and the AlN film with high crystallization quality can be obtained on the diamond substrate by accurately controlling the atomic beam, so that the AlN film has low dislocation density and good crystallization property. MBE can control the growth thickness with the precision of atomic level, and is very suitable for preparing ultra-thin films or heterostructures. In addition, the lower growth temperature of MBE (typically 750-950 ℃) compared to Chemical Vapor Deposition (CVD) is particularly advantageous for temperature sensitive diamond substrates, which can reduce surface damage and carbonization problems.
Drawings
FIG. 1 is a schematic diagram of a structure of a diamond diode based on polarized interface two-dimensional electron gas effect according to the present invention;
FIG. 2 is a material X-ray diffraction diagram of a diamond diode based on polarized interface two-dimensional electron gas effect according to the present invention;
FIG. 3 is a schematic diagram of a diamond substrate provided by a diamond diode based on polarized interface two-dimensional electron gas effect of the present invention;
FIG. 4 is a schematic diagram of an AlN layer formed by a diamond diode based on a polarized interface two-dimensional electron gas effect according to the invention;
FIG. 5 is a schematic diagram of a diamond diode forming an anode metal layer based on polarized interface two-dimensional electron gas effect according to the present invention;
FIG. 6 is a schematic diagram of a cathode metal layer formed by a diamond diode based on polarized interface two-dimensional electron gas effect according to the present invention;
Wherein the substrate comprises a 1-flexible substrate, a 2-diamond substrate, a 3-AlN layer, an A-anode metal layer and a C-cathode metal layer.
Detailed Description
For a better understanding of the present invention, the following examples are further illustrative of the present invention, but the contents of the present invention are not limited to the following examples only.
Example 1
As shown in fig. 1, a diamond diode based on polarized interface two-dimensional electron gas effect,
Comprising a flexible substrate 1 which is provided with a plurality of flexible layers,
A diamond substrate 2 formed on the surface of the flexible substrate 1;
An AlN layer 3 deposited on the surface of the diamond substrate 2;
an anode metal layer A formed on the surface of the diamond substrate 2 and positioned at one end of the AlN layer 3;
And a cathode electrode layer C formed on the surface of the AlN layer 3.
The thickness of the flexible substrate 1 is 1 mu m-1mm, the thickness of the diamond substrate 2 is 0.2-10 mu m, the thickness of the AlN layer 3 is 10nm-3 mu m, the thickness of the anode metal layer A is 0.1-1 mu m, and the thickness of the cathode metal layer C is 0.1-1 mu m.
The flexible substrate 1 is flexible glass or indium tin oxide, and in this embodiment, indium tin oxide is preferable.
The anode metal layer a and the cathode metal layer C are aluminum layers or gold layers, and in this embodiment, aluminum layers are preferable.
The diamond substrate 2 and the AlN layer 3 construct a heterostructure, two-dimensional electron gas with high mobility is formed, a polarized interface is formed, and n-type conductivity of diamond is realized.
As shown in fig. 2, in the embodiment, the characteristic of the X-ray diffraction performance of the diamond diode based on the two-dimensional electron gas effect of the polarized interface is that two-dimensional electron gas (2 DEG) is formed between the diamond layer and the AlN substrate, so that the electron mobility of the device is improved to be greater than 1000cm 2/v·s, the n-type conductivity of the diamond semiconductor device is realized, and the device performance is improved.
Example 2
A preparation method of a diamond diode based on a polarized interface two-dimensional electron gas effect comprises the following steps of growing a layer of diamond film on a flexible substrate by using a deposition process, wherein the preparation method comprises the steps of dispersing diamond powder into an ethanol solution, obtaining a diamond solution with uniform granularity by a magnetic stirring method and the like, and growing a layer of diamond film on the flexible substrate by using a process of multiple coating and drying, wherein the coating method comprises but is not limited to a spin coating method, a spray coating method, a drop coating method and the like, and the spin coating method is preferred in the embodiment.
As shown in fig. 4, an AlN film is grown on the diamond film using the MBE process;
As shown in fig. 5, the opening of the anode region of the diamond diode is realized by using a photoetching and etching method;
As shown in fig. 6, the anode and cathode of the device are fabricated using photolithography and physical vapor deposition processes, including but not limited to evaporation, sputtering, etc., with sputtering being preferred in this embodiment.
The above-mentioned deposition processes all need annealing treatment, and are conventional processes and will not be described in detail.
In this embodiment, the specific steps and parameters for growing an AlN film on a diamond film using an MBE (molecular beam epitaxy) process are as follows:
1. Cleaning the surface of the diamond film:
ultrasonic cleaning with high-purity acetone and ethanol for 5-10 min to remove organic pollutants on the surface.
The oxide layer is removed by soaking with a hydrofluoric acid (HF) solution (the specific time is adjusted according to the oxidation degree of the substrate).
After drying, the surfaces are placed in an MBE system and subjected to high temperature annealing (under vacuum or hydrogen atmosphere) to further clean the surfaces.
2. Cavity and vacuum environment
Background vacuum degree 10 -9-10-10 Torr.
The working vacuum degree is that the stable working pressure after the nitrogen/nitriding gas is introduced is 10 -5-10-6 Torr.
3. Parameters of nitrogen source
Nitrogen type high purity nitrogen (99.9999%), activated by plasma source to generate active nitrogen (N atoms or N2 molecules).
The nitrogen plasma activation power is 300-450W (adjusted according to the specification of the equipment).
Nitrogen flow rate 0.5-1.5sccm (standard cubic centimeter per minute).
4. Aluminum source parameters
The aluminum source was in the form of high purity aluminum (99.9999%) supplied from a thermal evaporation source or Knudsen source.
Aluminum evaporation temperature 850-950 ℃ (actual evaporation temperature depends on equipment calibration).
The flux of the aluminum beam is 1 x 10 -7-5*10-7 Torr (in terms of partial pressure).
5. Substrate temperature
The growth temperature is 750-950 ℃, which is optimized according to the thermal stability of the diamond surface and the quality of the film.
Higher temperatures help improve film crystallization quality, but excessive temperatures may lead to carbonization or evaporation of the substrate surface.
The pretreatment temperature is 950-1100 ℃ and is used for removing residual pollution on the surface.
6. Growth time
Initial low temperature buffer layer a low temperature AlN buffer layer 5-10nm thick is grown at 200-400 ℃ to reduce lattice mismatch.
The main AlN layer is grown to a target thickness of 750-950 ℃ and the growth rate is usually 0.5-2 mu m/h.
7. Growth mode
Growth mode, lamellar/island mixed mode (Stranski-Krastanov mode), depends on the crystal plane quality and surface energy of the diamond surface.
The growth rate is 0.1-0.5nm/s, and the beam current and the nitrogen flow rate of the aluminum source are controlled by adjusting.
8. Critical process control
Surface flatness monitoring-the growth dynamics and crystallization quality of the films were monitored in real time using Reflected High Energy Electron Diffraction (RHEED).
Lattice mismatch control, i.e., interface stress is reduced by using a low temperature buffer layer or doping (e.g., doping silicon, oxygen).
Annealing treatment, namely annealing under nitrogen atmosphere (800-1000 ℃), can improve crystal quality and reduce interface defects.
While the invention has been described with respect to the preferred embodiments, it will be understood that the invention is not limited thereto, but is capable of modification and variation without departing from the spirit of the invention, as will be apparent to those skilled in the art.
Claims (10)
1. A diamond diode based on polarized interface two-dimensional electron gas effect is characterized in that,
Comprising a flexible substrate and a plurality of flexible substrates,
A diamond substrate formed on the surface of the flexible substrate;
an AlN layer deposited on the surface of the diamond substrate;
An anode metal layer formed on the surface of the diamond substrate and positioned at one end of the AlN layer;
And a cathode electrode layer formed on the AlN layer surface.
2. The two-dimensional electron gas effect based on polarized interface diamond diode according to claim 1 wherein the thickness of the flexible substrate is 1 μm-1mm, the thickness of the diamond substrate is 0.2 μm-10 μm, the thickness of the AlN layer is 10nm-3 μm, the thickness of the anode metal layer is 0.1 μm-1 μm, and the thickness of the cathode metal layer is 0.1 μm-1 μm.
3. The diamond diode based on polarized interface two-dimensional electron gas effect according to claim 1, wherein the flexible substrate is flexible glass or indium tin oxide.
4. The two-dimensional electron gas effect based on polarized interface diamond diode according to claim 1, wherein said anode metal layer and cathode metal layer are aluminum layer or gold layer.
5. The two-dimensional electron gas effect based on the polarized interface of the diamond diode of claim 1, wherein the diamond substrate and the AlN layer form a heterostructure, a two-dimensional electron gas with high mobility is formed, a polarized interface is formed, and n-type conduction of diamond is realized.
6. A method of manufacturing a diamond diode based on polarized interface two-dimensional electron gas effect according to any one of claims 1-5, comprising the steps of:
preparing a diamond substrate on the surface of a flexible substrate;
Depositing an AlN layer on the surface of the diamond substrate by using an MBE process;
opening holes of the anode region of the diamond diode on the surface of the AlN layer by adopting a photoetching and etching method;
the anode metal layer and the cathode metal layer of the device are prepared by using photoetching and physical vapor deposition processes.
7. The method for preparing the diamond diode based on the polarized interface two-dimensional electron gas effect according to claim 6, wherein the process parameters of depositing the AlN layer on the surface of the diamond substrate by adopting the MBE process are that the background vacuum degree is 10 -9-10-10 Torr, the working vacuum degree is 10 -5-10-6 Torr after nitrogen gas/nitriding gas is introduced, the growth temperature is 750-950 ℃, the growth time comprises that an initial low-temperature buffer layer grows at 200-400 ℃ to a low-temperature AlN buffer layer with the thickness of 5-10nm, the main AlN layer grows at 750-950 ℃ to a target thickness, the growth rate is 0.5-2 mu m/h, the growth mode is a layered/island mixed mode, the growth rate is 0.1-0.5nm/s, and the annealing treatment is 800-1000 ℃ annealing under the nitrogen atmosphere.
8. The method for preparing the diamond diode based on the polarized interface two-dimensional electron gas effect of claim 6, wherein the type of nitrogen used for depositing the AlN layer on the surface of the diamond substrate by adopting the MBE process is 99.9999% high-purity nitrogen, the activation power of nitrogen plasma is 300-450W, and the nitrogen flow is 0.5-1.5sccm.
9. The method for preparing a diamond diode based on polarized interface two-dimensional electron gas effect according to claim 6, wherein the aluminum source form adopted by the MBE process for depositing the AlN layer on the surface of the diamond substrate is 99.9999% high-purity aluminum, the aluminum evaporation temperature is 850-950 ℃, and the aluminum beam flux is 1X 10 -7-5*10-7 Torr.
10. The method of claim 6, wherein the deposition is at least one of chemical vapor deposition, microwave plasma chemical vapor deposition, thermal ion technology deposition, evaporation, sputtering, atomic layer deposition, and physical vapor deposition.
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| US20080121897A1 (en) * | 2006-11-08 | 2008-05-29 | Laroche Jeffrey R | Boron aluminum nitride diamond heterostructure |
| JP2008186936A (en) * | 2007-01-29 | 2008-08-14 | Nec Corp | Field effect transistor |
| CN116845093A (en) * | 2023-06-30 | 2023-10-03 | 深圳市汇芯通信技术有限公司 | Semiconductor structure and preparation method thereof, semiconductor device and semiconductor wafer |
| CN117832060A (en) * | 2023-12-28 | 2024-04-05 | 武汉大学 | PN junction based on N-type single crystal diamond and P-type two-dimensional material and preparation method thereof |
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- 2024-12-31 CN CN202411990691.4A patent/CN119855166A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080121897A1 (en) * | 2006-11-08 | 2008-05-29 | Laroche Jeffrey R | Boron aluminum nitride diamond heterostructure |
| JP2008186936A (en) * | 2007-01-29 | 2008-08-14 | Nec Corp | Field effect transistor |
| CN116845093A (en) * | 2023-06-30 | 2023-10-03 | 深圳市汇芯通信技术有限公司 | Semiconductor structure and preparation method thereof, semiconductor device and semiconductor wafer |
| CN117832060A (en) * | 2023-12-28 | 2024-04-05 | 武汉大学 | PN junction based on N-type single crystal diamond and P-type two-dimensional material and preparation method thereof |
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