Disclosure of Invention
The application aims to provide a display panel, a manufacturing method thereof and a display device, wherein a first partition structure and a second partition structure are stacked and arranged, a cathode is partitioned by the first partition structure, a light-emitting functional layer is partitioned by the second partition structure, a film interface between the cathode and the light-emitting functional layer is improved, and the light-emitting efficiency and the service life of a light-emitting unit are improved.
The application discloses a display panel which comprises a substrate, a pixel definition layer, a light emitting unit, a first partition structure and a second partition structure, wherein the pixel definition layer is arranged on the substrate and is provided with a plurality of opening areas, the light emitting unit is arranged on the substrate and is positioned in the opening areas, the light emitting unit comprises an anode, a light emitting functional layer and a cathode, the cathode is arranged on the substrate, the light emitting functional layer is arranged on the cathode, the anode is arranged on the light emitting functional layer, the second partition structure is arranged on the first partition structure, the first partition structure is used for partitioning cathodes of two adjacent light emitting units, the second partition structure is used for partitioning the light emitting functional layers of the two adjacent light emitting units, the radial width of the cathode is smaller than the width of the light emitting functional layer on the orthographic projection of the substrate, and the first partition structure is also used for partitioning the cathodes and the second partition structure.
Optionally, the first partition structure includes a partition layer, the partition layer is disposed below the pixel definition layer and is in direct contact with the pixel definition layer, and under the orthographic projection of the substrate, a boundary of the partition layer is within a projection range of the pixel definition layer and has a preset distance from the projection boundary of the pixel definition layer, and the pixel definition layer and the partition layer form the first partition structure.
Optionally, the second isolation structure includes a conductive portion and an isolation portion, the conductive portion is disposed on the pixel definition layer, the isolation portion is disposed on the conductive portion, a radial width of the isolation portion is greater than a radial width of the conductive portion, the conductive portion is used for connecting anodes of two adjacent light emitting units, on a projection of the substrate, a boundary of the isolation portion of the second isolation structure is disposed on a side, far away from the light emitting units, of the first isolation structure, and the light emitting functional layer covers the first isolation structure and extends onto the pixel definition layer with a gap therebetween.
Optionally, the light-emitting functional layer includes an electron transport layer, a light-emitting layer and a hole transport layer, the electron transport layer is disposed on a side of the light-emitting layer, which is close to the cathode, the hole transport layer is disposed on a side of the light-emitting layer, which is close to the anode, the electron transport layer is separated by the first separation structure, the radial width of the electron transport layer is equal to the radial width of the cathode, the light-emitting layer and the hole transport layer are disposed to cover the first separation structure and are separated by the second separation structure, the radial widths of the light-emitting layer and the hole transport layer are respectively greater than the radial width of the electron transport layer, and the electron transport layer, the light-emitting layer and the hole transport layer are further used for separating between the cathode and the conductive portion.
Optionally, the light emitting units further include cathode auxiliary electrodes, the cathode auxiliary electrodes in two adjacent light emitting units are isolated and insulated by the pixel definition layer, the cathode auxiliary electrodes are arranged under the cathodes and are in direct contact with the cathodes, the partition layer is arranged between the cathode auxiliary electrodes and the pixel definition layer, the partition layer is formed by conductive materials, the partition layer is in direct contact with the cathode auxiliary electrodes, and in two adjacent light emitting units, the two adjacent partition layers are isolated by the pixel definition layer.
Optionally, the cathode is formed by one or two of magnesium material and silver material, the anode is formed by whole surface deposition of reflective metal material, the plurality of light-emitting units share the anode, the light emitted by the light-emitting units is emitted from one side of the substrate, the thickness of the cathode is more than or equal to 100 and less than or equal to 300, the preset distance is more than or equal to 5000 and less than or equal to 50000, and the thickness of the partition layer is more than or equal to 100 and less than or equal to 1000.
The application also discloses a manufacturing method of the display panel, which comprises the following steps:
Providing a substrate base plate;
Forming a pixel defining layer and a first partition structure in a non-opening region on a substrate;
forming a second partition structure on the first partition structure;
forming a cathode in the opening area by utilizing the first partition structure;
Forming a light-emitting functional layer in the opening area by utilizing the second partition structure;
Forming an anode to form a light emitting unit;
the first partition structure is used for partitioning the cathode and the second partition structure, wherein the radial width of the cathode is smaller than the width of the light-emitting functional layer on the orthographic projection of the substrate.
Optionally, the step of forming the pixel defining layer and the first isolation structure in the non-opening area on the substrate includes:
forming a whole partition layer material layer in a non-opening area on a substrate;
depositing a whole pixel definition layer material layer on the whole partition layer material layer, removing the pixel definition layer material of the opening area, and reserving the pixel definition layer of the non-opening area;
Etching the partition layer by using the pixel definition layer as a protective layer so that the pixel definition layer and the partition layer form a first partition structure;
under the orthographic projection of the substrate, the boundary of the isolation layer is within the projection range of the pixel definition layer, and has a preset distance with the projection boundary of the pixel definition layer;
the step of forming a second partition structure on the first partition structure comprises the following steps:
Sequentially forming a conductive part material layer and a partition part material layer on the pixel definition layer;
Patterning to form a partition part, and etching the conductive part material layer by using the partition part as a protective layer to form a second partition structure, wherein the radial width of the partition part is larger than that of the conductive part;
the step of forming the anode to form the light emitting unit includes:
And forming a light-emitting functional layer in the opening area by utilizing the second partition structure, wherein anodes of two adjacent light-emitting units are connected through the conductive part.
Optionally, the step of backing the partition layer material layer on the substrate includes:
Sequentially depositing a cathode auxiliary electrode material layer and a partition layer material layer on the substrate;
etching the partition layer material layer and the cathode auxiliary electrode in sequence at the position of the non-opening area to form a partition hole;
The step of depositing the whole pixel defining layer material layer on the whole partition layer material layer, removing the pixel defining layer material of the opening area, and reserving the pixel defining layer of the non-opening area comprises the following steps:
Depositing a pixel definition layer material layer on the whole surface, wherein the pixel definition layer fills the partition holes at the position of the partition holes;
and after removing the pixel definition layer material of the opening area, retaining the pixel definition layer of the non-opening area, wherein the pixel definition layer fills the partition hole, and the radial width of the pixel definition layer is larger than the width of the partition hole.
The application also discloses a display device which comprises the driving circuit and the display panel, wherein the driving circuit is used for driving the display panel to display.
Detailed Description
It is to be understood that the terminology used herein, the specific structural and functional details disclosed are merely representative for the purpose of describing particular embodiments, but that the application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or implicitly indicating the number of technical features indicated. Thus, unless otherwise indicated, features defining "a first", "a second", and "a plurality" may include one or more of such features explicitly or implicitly, and "a plurality" means two or more. In addition, terms of the azimuth or positional relationship indicated by "upper", "lower", "left", "right", "vertical", "horizontal", etc., are described based on the azimuth or relative positional relationship shown in the drawings, and are merely for convenience of description of the present application, and do not indicate that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present application. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
The application is described in detail below with reference to the attached drawings and alternative embodiments.
Fig. 1 is a schematic view of a display panel 100 according to a first embodiment of the present application, referring to fig. 1, the present application discloses a display panel 100, wherein the display panel 100 includes a substrate 110, a pixel definition layer 120, a light emitting unit 130, a first blocking structure 140 and a second blocking structure 150, the pixel definition layer 120 is disposed on the substrate 110 and is provided with a plurality of opening areas 101, the light emitting unit 130 is disposed on the substrate 110 and is located in the opening areas 101, the light emitting unit 130 includes an anode 133, a light emitting functional layer 132 and a cathode 131, the cathode 131 is disposed on the substrate 110, the light emitting functional layer 132 is disposed on the cathode 131, the anode 133 is disposed on the light emitting functional layer 132, the second blocking structure 150 is disposed on the first blocking structure 140, the first blocking structure 140 is used for blocking cathodes 131 of two adjacent light emitting units 130, the second blocking structure 150 is used for blocking light emitting functional layers 132 of two adjacent light emitting units 130, wherein the width of the front projection layer 131 is smaller than the second blocking structure 150 in the radial direction.
The present application provides a first barrier structure 140 and a second barrier structure 150 stacked on each other, wherein the first barrier structure 140 is used to block the cathode 131, and the second barrier structure 150 is used to block the light emitting functional layer 132. Through the use of the first partition structure 140 and the second partition structure 150, the radial width of the cathode 131 is smaller than the radial width of the light emitting functional layer 132, so that the problem that the cathode 131 and the anode 133 may be short-circuited when the cathode 131, the light emitting functional layer 132 and the anode 133 of the light emitting unit 130 are subjected to maskless evaporation through the partition structures is avoided. On the other hand, the cathode 131, the light-emitting functional layer 132 and the anode 133 of the light-emitting unit 130 can be evaporated without mask by the first partition structure 140 and the second partition structure 150, which has the advantage that the cathode 131 and the light-emitting functional layer 132 can be formed in the same environment in the process of forming the cathode 131 and the light-emitting functional layer 132, thereby avoiding the problem of cathode 131 oxidation caused by etching the cathode 131 in the exemplary process. Meanwhile, the interface of the film layer between the cathode 131 and the light emitting function layer 132 is improved, and the light emitting efficiency of the light emitting unit 130 is improved.
In an embodiment of the present application, the cathode 131, the light emitting functional layer 132, and the anode 133 of the light emitting unit 130 may be formed using the first partition structure 140 alone or the second partition structure 150 alone. The first isolation structure 140 or the second isolation structure 150 is a key structure used in maskless evaporation technology, and is also commonly referred to as an eave structure or a conductive isolation structure. The patterned cathode 131, the light-emitting functional layer 132 and the anode 133 can be formed in the corresponding opening areas 101 without using a metal mask when the anode 133, the cathode 131 and the light-emitting functional layer 132 are vapor-deposited by the partition capability of the partition structure. In the current maskless vapor deposition technology, the light emitting functional layer 132 and the anode 133 or the cathode 131 on the light emitting functional layer 132 are mainly formed by using a partition structure, and the process of separating the anode 133 and the cathode 131 is not performed by using the partition structure. Therefore, in the maskless vapor deposition process, there is generally no problem that the anode 133 and the cathode 131 are short-circuited. In the present application, the cathode 131 disposed under the light emitting function layer 132 is also formed by using a maskless evaporation technique, so that the phenomenon that the cathode 131 needs an etching step to make the interface of the film layer between the cathode 131 and the light emitting function layer 132 poor is improved, but in the case of using the first partition structure 140 or the second partition structure 150 alone, there may be a problem that the anode 133 and the cathode 131 are shorted even if the evaporation angle is controlled. In contrast, according to the application, by arranging the first partition structure 140 and the second partition structure 150, the radial widths of the cathode 131 and the light-emitting functional layer 132 are different by utilizing the partition capability of the first partition structure 140 and the second partition structure 150, and the side surface of the cathode 131 is completely covered by the light-emitting functional layer 132, so that the problem of short circuit between the cathode 131 and the anode 133 is avoided.
Specifically, the second isolation structure 150 of the present application is an isolation structure in a conventional maskless evaporation technology, the second isolation structure 150 includes a conductive portion 151 and an isolation portion 152 disposed on the pixel defining layer 120, the conductive portion 151 is disposed on the pixel defining layer 120, the isolation portion 152 is disposed on the conductive portion 151, and a radial width of the isolation portion 152 is greater than a radial width of the conductive portion 151.
In this embodiment, the second blocking structure 150 mainly serves to block the light emitting functional layer 132 and the anode 133. Of course, the second blocking structure 150 also acts as a blocking member for the cathode 131 in the entire vapor deposition of the cathode 131. Therefore, in the entire surface deposition of the cathode 131, in addition to the cathode 131 formed in the opening area 101, a first cathode 131 redundant electrode is formed between the first partition structure 140 and the second partition structure 150, a second cathode 131 redundant electrode is formed on the second partition structure 150, and the three electrodes are not connected to each other. Wherein, the first partition structure 140 and the second partition structure 150 are disposed at different positions, and the first partition structure 140 is disposed at a position of the second partition structure 150 closer to the opening area 101, so that the radial width of the cathode 131 is smaller than the radial width of the light emitting functional layer 132. If the first partition structure 140 is not provided, the cathode 131 and the light-emitting functional layer 132 are partitioned by the second partition structure 150, the radial width of the cathode 131 should be equal to the radial width of the light-emitting functional layer 132, and the cathode 131 and the conductive portion 151 or the anode 133 are liable to be shorted.
The conductive portion 151 in the second isolation structure 150 is also used to connect the anodes 133 of the plurality of light emitting units 130, forming an entire anode 133 wiring. In this embodiment, the display panel 100 of the present application is an inverted bottom-emission display panel 100, in which the cathode 131 of the light-emitting unit 130 employs a light-transmitting electrode, the anode 133 employs a reflecting electrode, and the light emitted from the light-emitting unit 130 is emitted from the cathode 131 side, thereby being emitted from the substrate 110 side, to form the bottom-emission display panel 100. Therefore, the cathodes 131 disposed at the lower portion of the light emitting function layer 132 need to be independently disposed, the two cathodes 131 are not connected to each other and are connected to the corresponding pixel driving circuits, respectively, and the anodes 133 need only to be given a fixed voltage, so that the anodes 133 of the plurality of light emitting units 130 are connected together. By providing the anode 133 as a reflective electrode and connecting it together, the problem of drag-down in the anode 133 can be greatly reduced.
Fig. 2 is a schematic diagram of the film layers of the light emitting unit 130 according to the present application, referring to fig. 2, the inversion refers to the order of the middle light emitting functional layer 132 of the light emitting unit 130, in this embodiment, the light emitting functional layer 132 may generally include an electron transporting layer 1326, a light emitting layer 1324, and a hole transporting layer 1322, in the inverted light emitting layer 1324, the electron transporting layer 1326 is generally disposed at a side of the light emitting layer 1324 near the cathode 131, and the hole transporting layer 1322 is generally disposed at a side of the light emitting layer 1324 near the anode 133. Generally, the light emitting functional layers 132 in the bottom emission display panel 100 are all inverted, so that they have higher light emitting efficiency. The inversion scheme has a high work function requirement between the anode 133 and the cathode 131, and a work function for the cathode 131 as low as possible. In this case, the anode 133 is a reflective electrode, and may be a silver material. When a transparent electrode is used as the cathode 131, a problem of low luminous efficiency is likely to occur when an electrode having a high work function such as a transparent conductive layer is used.
Therefore, it is necessary to add a light-transmitting active metal in the cathode 131 to lower the work function of the cathode 131, and to add an ITO or IZO material having a higher work function in the anode 133 to increase the work function of the anode 133. In the case where the cathode 131 is added with an active metal, two aspects are considered, and the first aspect is to consider the light transmittance of the active metal, the transmittance of the metal being related to its lattice structure, which refers to the manner in which metal atoms are arranged in a specific regular manner. When the lattice structure of the metal is sufficiently compact and there is insufficient space for photons to pass through, the metal exhibits an opaque character. If the thickness of the metal is reduced to some extent, photons may pass through the lattice structure of the metal, causing the metal to become transparent. In another scheme, the work function is required to be considered, the thickness is required to be set in consideration of the light transmittance, and the work function is also required to be considered, and the thickness has an influence on the work function. In general, the cathode 131 is formed using an active metal material, for example, magnesium or silver, and the thickness of the cathode 131 needs to be smaller than that of the reflective metal layer in the anode 133 to achieve high luminous efficiency.
However, when the active metal material used for the cathode 131 is thin, for example, 100 to 300 a, oxidation is likely to occur in the deposition and etching steps in the process, and particularly, in the etching process, photoresist residues, etching problems and the like also exist, which affect the work function of the cathode 131, thereby resulting in lower light-emitting efficiency of the inverted bottom-emission display panel 100. However, by the first partition structure 140 of the present application, the patterned cathode 131 is formed using the first partition structure 140 in the process of proving the deposition of the cathode 131. Even when a thin active metal is formed as the cathode 131, problems such as oxidation do not occur in a vacuum environment. It should be noted that in the case where the active metal deposition of the cathode 131 is thin, it is easily oxidized during the deposition. For the front top-emission display panel 100, the cathode 131 is generally made of an indium tin oxide material, the anode 133 is generally made of two layers of indium tin oxide material with a layer of silver material interposed therebetween, the thickness of the silver material is thicker to form a reflective electrode, and the two layers of indium tin oxide material are protected, so that oxidation is relatively difficult to occur. However, for the inverted bottom-emission display panel 100, the top of the cathode 131 is not protected by the indium tin oxide material, and oxidation is very easy to occur in the subsequent process, and the embodiment utilizes the first partition structure 140 to protect the cathode 131, and in combination with the above, the cathode 131 is separated from the first cathode 131 redundant electrode and the second cathode 131 redundant electrode, so as to achieve a better light emitting effect.
Fig. 3 is a schematic view of a first partition structure 140 and a second partition structure 150 according to the present application, and referring to fig. 3, specifically, the first partition structure 140 includes a partition layer 141, the partition layer 141 is disposed below the pixel defining layer 120 and is in direct contact with the pixel defining layer 120, under the front projection of the substrate 110, the boundary of the partition layer 141 is within the projection range of the pixel defining layer 120 and has a preset distance from the projection boundary of the pixel defining layer 120, and the pixel defining layer 120 and the partition layer 141 form the first partition structure 140.
The first partition structure 140 is closer to the opening area 101 than the second partition structure 150 on the front projection of the base substrate 110, so that the radial width of the cathode 131 formed by the first partition structure 140 is smaller than the radial width of the light emitting functional layer 132 formed by the second partition structure 150. Therefore, the anode 133, the cathode 131, the first cathode 131 redundant electrode and the second cathode 131 redundant electrode can be separated by utilizing the light-emitting functional layer 132, so that the problem of short circuit when the anode 133 and the cathode 131 are respectively formed by a maskless evaporation technology is avoided.
Fig. 4 is a schematic view of a display panel 100 according to a second embodiment of the present application, and referring to fig. 4, the light emitting units 130 further include cathode auxiliary electrodes 134, the cathode auxiliary electrodes 134 in two adjacent light emitting units 130 are isolated by the pixel defining layer 120, the cathode auxiliary electrodes 134 are disposed under the cathodes 131 and are in direct contact with the cathodes 131, the partition layer 141 is disposed between the cathode auxiliary electrodes 134 and the pixel defining layer, the partition layer 141 is formed of a conductive material, the partition layer 141 is in direct contact with the cathode auxiliary electrodes 134, and in two adjacent light emitting units 130, the two adjacent partition layers 141 are isolated by the pixel defining layer 120.
In this embodiment, the cathode auxiliary electrode 134 may be formed of a transparent conductive material, such as an indium tin oxide material or an indium zinc oxide material, by disposing the cathode auxiliary electrode 134 under the cathode 131. The cathode auxiliary electrode 134 is connected to the pixel active switch in the pixel driving layer 160 through a via. It is understood that the pixel driving layer 160 is further disposed on the substrate 110, and the pixel driving layer 160 generally includes a pixel driving circuit of the light emitting units 130, such as a pixel active switch, a data driving line, a scan control line, etc., and the cathode 131 of each light emitting unit 130 is connected to the pixel active switch through the cathode auxiliary electrode 134, and the voltage of the cathode 131 is controlled and turned off through the pixel active switch. Specifically, the cathode auxiliary electrodes 134 of adjacent two of the light emitting units 130 are separated by the pixel defining layer 120. Considering that the cathode auxiliary electrode 134 needs to be directly connected to the cathode 131 of each light emitting unit 130, the cathode auxiliary electrodes 134 of adjacent light emitting units 130 also need to be spaced apart to avoid the electrical crosstalk problem.
The cathode auxiliary electrode 134 in this embodiment is generally formed by etching, and after the cathode auxiliary electrode 134 material is laid over the entire surface, the material of the non-opening region 102 is removed by etching, so that the cathode auxiliary electrode 134 of the opening region 101 remains. The cathode auxiliary electrode 134 may be etch-protected by the barrier layer 141 during the etching process. Specifically, the partition layer 141 is provided between the pixel defining layer 120 and the cathode auxiliary electrode 134, and between the adjacent two opening regions 101, the adjacent partition layer 141 and the cathode auxiliary electrode 134 are insulated by the pixel defining layer 120. The cathode auxiliary electrode 134 is protected by the barrier layer 141 when the cathode auxiliary electrode 134 is etched. In the process of forming the first blocking structure 140, the blocking layer 141 of the opening area 101 is removed, so that the blocking layer 141 on the cathode auxiliary electrode 134 is stripped, and the first blocking structure 140 is formed at the edge of the pixel defining layer 120, and the cathode 131 is blocked when formed. It should be noted that the blocking capability of the first blocking structure 140 and the second blocking structure 150 in the present application mainly exceeds the width of the lower portion, for example, in a blocking structure, the distance w between the boundary of the pixel defining layer 120 and the boundary of the blocking layer 141 and the thickness of the blocking layer 141 determine the blocking capability of the first blocking structure 140.
The partition layer 141 may be formed of a metal material, that is, after the pixel driving layer 160 on the substrate 110 completes the process, the partition layer 141 is formed of a metal material different from the material of the cathode auxiliary electrode 134 after the cathode auxiliary electrode 134 is formed, a layer of pixel defining layer 120 is formed on the partition layer 141, the pixel defining layer 120 is patterned, that is, after a plurality of openings are formed through the pixel defining layer 120 as the opening areas 101, the partition layer 141 is etched by using the pixel defining layer 120, so that at the boundary position between each non-opening area 102 and the opening area 101, the pixel defining layer 120 exceeds the partition layer 141 by a certain distance to form the first partition structure 140. In this process, although the structure of the partition layer 141 is added, the process is not complicated, and the process can be completely implemented by the current process without adding a mask.
When the barrier layer 141 is formed of a metal material, the barrier layer 141 is in direct contact with the cathode auxiliary electrode 134, and thus it is also necessary to provide the barrier layers 141 of the adjacent light emitting units 130 at intervals, and to insulate them by the pixel defining layer 120.
In a specific embodiment, the second partition structure 150 has a greater partition capacity than the first partition structure 140. Because in the maskless evaporation technology, the material of the pixel defining layer 120 is selected to be an inorganic insulating material due to the second isolation structure 150, so that the height of the pixel defining layer 120 is limited, the isolation capability of the first isolation structure 140 is limited, and the pixel defining layer 120 is changed to be an organic insulating material, so that the problem of thicker film layer is easy to occur. Therefore, in the present embodiment, the first blocking structure 140 generally can only block the film layer of the light unit 130 from the partition 152, and cannot completely block the light emitting function layer 132.
Specifically, the light emitting functional layer 132 includes an electron transporting layer 1326, a light emitting layer 1324 and a hole transporting layer 1322, the electron transporting layer 1326 is disposed on a side of the light emitting layer 1324 near the cathode 131, the hole transporting layer 1322 is disposed on a side of the light emitting layer 1324 near the anode 133, the electron transporting layer 1326 is separated by the first separating structure 140, a radial width of the electron transporting layer 1326 is equal to a radial width of the cathode 131, the light emitting layer 1324 and the hole transporting layer 1322 are disposed to cover the first separating structure 140 and separated by the second separating structure 150, a radial width of the light emitting layer 1324 and a radial width of the hole transporting layer 1322 are respectively greater than a radial width of the electron transporting layer 1326, and the electron transporting layer 1326, the light emitting layer 1324 and the hole transporting layer 1322 are further used for separating between the cathode 131 and the conductive portion 151.
In this embodiment, the electron transport layer 1326 located near the cathode 131 can be separated by the first separation structure 140, so that in order to completely separate the cathode 131 by the first separation structure 140, the separation capability of the first separation structure 140 needs to be directly separated to the light emitting functional layer 132, so that the first separation structure 140 can be ensured to completely separate the cathode 131. Thus, for the light emitting function layer 132, it is necessary to insulate the cathode 131 from the first cathode 131 redundant electrode which is partitioned by the first partition structure 140. Thereby further avoiding shorting problems between the cathode 131 and the redundant electrode of the first cathode 131, the anode 133. It is worth mentioning that even though the radial widths of the cathode 131 and the electron transport layer 1326 are reduced, the effective light emitting area of the light emitting unit 130 is not substantially affected.
Of course, in a specific embodiment, the electron injection layer 1327 is further disposed on a side of the electron transport layer 1326 near the cathode 131, the hole blocking layer 1325 is disposed on a side of the hole transport layer 1322 near the anode, the hole injection layer 1321 is disposed on a side of the hole transport layer 1322 near the anode, and the electron blocking layer 1323 is disposed on a side of the hole transport layer near the light emitting layer 1324. The film layer on the side of the electron transport layer 1326 near the cathode 131 is also separated by the first separating structure 140, so that an electron injection layer that is not connected to each other is formed in the opening region 101.
Wherein the thickness of the cathode 131 is 100 to 300, 5000 to 50000, preferably 10000 to 30000, in the first partition structure 140, and the thickness of the partition layer 141 is 100 to 600, preferably 200 to 500, when the first partition structure 140 partitions the cathode 131 only. When the first partition structure 140 continues to partition to the electron transport layer 1326, the thickness of the partition layer 141 is 200 a m or more and 1500 a m or less, preferably 400 a m to 1000 a m.
Fig. 5 is a schematic step diagram of a method for manufacturing a display panel according to the present application, fig. 6 is a schematic flow diagram of a method for manufacturing a display panel according to the present application, and referring to fig. 5 to 6, the present application also discloses a method for manufacturing a display panel according to any of the above embodiments, including the steps of:
S10, providing a substrate base plate;
S20, forming a pixel definition layer and a first partition structure in a non-opening area on a substrate;
s30, forming a second partition structure on the first partition structure;
s40, forming a cathode in the opening area by utilizing the first partition structure;
s50, forming a luminous functional layer in the opening area by utilizing the second partition structure;
S60, forming an anode to form a light-emitting unit;
And S70, forming a display panel.
The first partition structure is used for partitioning the cathode and the second partition structure, wherein the radial width of the cathode is smaller than the width of the light-emitting functional layer on the orthographic projection of the substrate.
According to the application, through the arrangement of the first partition structure and the second partition structure, the first partition structure is used for carrying out maskless evaporation plating on the forming cathode, the second partition structure is used for carrying out maskless evaporation plating on the forming light-emitting functional layer, and the positions of the first partition structure and the second partition structure are different, so that the radial width of the cathode is smaller than that of the light-emitting functional layer, and therefore, the light-emitting functional layer is used for forming insulation separation between the cathode and the anode, and short circuit between the anode and the cathode is avoided. On the other hand, the cathode, the light-emitting functional layer and the anode of the light-emitting unit can be subjected to maskless evaporation through the first partition structure and the second partition structure, and the cathode and the light-emitting functional layer can be formed in the same environment in the process of forming the cathode and the light-emitting functional layer, so that the problem that cathode oxidation is caused by etching the cathode in an exemplary process is avoided. Meanwhile, the interface of the film layer between the cathode and the luminous functional layer is improved, and the luminous efficiency of the luminous unit is improved.
The step of S20 includes:
s201, forming a whole partition layer material layer in a non-opening area on a substrate;
S202, depositing a whole pixel definition layer material layer on the whole partition layer material layer, removing the pixel definition layer material of the opening area, and reserving the pixel definition layer of the non-opening area;
s203, etching the partition layer by using the pixel definition layer as a protective layer so that the pixel definition layer and the partition layer form a first partition structure;
under the orthographic projection of the substrate, the boundary of the isolation layer is within the projection range of the pixel definition layer, and has a preset distance from the projection boundary of the pixel definition layer. For the material layers of the partition layer material layer and other film layers, a general material layer designation is to form the partition layer material layer laid on the whole surface of the substrate, form a corresponding partition layer after removing a partial area, namely patterning, and distinguish the partition layer from the partition layer material layer by adding the material layer, wherein no other distinction exists between the partition layer material layer and the partition layer. The first isolation structure of the embodiment mainly adopts to add an isolation layer between the pixel definition layer and the substrate base plate, and the isolation layer and the pixel definition layer are utilized to form the first isolation structure, and the etching of the isolation layer does not need to add an extra mask, so that the increase of the processing cost is avoided.
The step of S30 includes:
S301, sequentially forming a conductive part material layer and a partition part material layer on the pixel definition layer;
and S302, patterning to form a partition part, and etching the conductive part material layer by using the partition part as a protective layer to form a second partition structure, wherein the radial width of the partition part is larger than that of the conductive part.
The step of S60 includes:
And S601, forming a light-emitting functional layer in the opening area by utilizing the second partition structure, wherein anodes of two adjacent light-emitting units are connected through the conductive part.
In this embodiment, the light emitting functional layer and the anode are partitioned by the second partition structure by forming the second partition structure on the pixel defining layer. It will be appreciated that the second partition structure also acts as a partition to the cathode during the overall deposition of the cathode. Therefore, in the whole cathode evaporation process, besides forming a cathode in the opening area, a first cathode redundant electrode is formed between the first partition structure and the second partition structure, a second cathode redundant electrode is formed on the second partition structure, the three sections of electrodes are not connected with each other, and the second cathode redundant electrode on the second partition structure can be removed in the subsequent process.
Of course, in the display panel in which the cathode auxiliary electrode is provided in the barrier layer, the step S20 includes:
S211, sequentially depositing a cathode auxiliary electrode material layer and a partition layer material layer on the substrate;
s212, etching the partition layer material layer and the cathode auxiliary electrode in sequence at the position of the non-opening area to form a partition hole;
S213, depositing a pixel definition layer material layer on the whole surface, wherein the pixel definition layer fills the partition holes at the positions of the partition holes;
S214, after removing the pixel definition layer material of the opening area, reserving the pixel definition layer of the non-opening area, wherein the pixel definition layer fills the partition hole, and the radial width of the pixel definition layer is larger than the width of the partition hole;
s215, etching the partition layer by using the pixel definition layer as a protection layer so that the pixel definition layer and the partition layer form a first partition structure
In this embodiment, the cathode auxiliary electrode is protected by the isolation layer, and after the first isolation structure is completed, the cathode auxiliary electrode is exposed from the opening region, and the cathode is in direct contact with the cathode auxiliary electrode when the cathode is formed.
The first partition structure and the second partition structure of the present embodiment may be disposed around each opening area, respectively, so that in the process of forming the cathode, the light emitting functional layer, and the anode, they may be formed by a maskless evaporation technique. The arrangement of the cathode, the cathode auxiliary electrode and the anode ensures that the inverted bottom-light-emitting display panel has high light-emitting efficiency. And because the anode does not need to transmit light, the anode can be thick and formed in an integral way, so that the resistance drop of the anode formed in the integral way at different positions is smaller than that of an integral cathode formed by adopting indium tin oxide in a front top-emission display panel, the resistance drop at different positions is more uniform, and the voltage difference at different positions is avoided. In this case, the inverted bottom emission display panel is further advantageous in that the light emitted from the light emitting unit is not emitted from the encapsulation layer above the light emitting unit after the light emitting unit is completed. Thus, the selectivity of the material and process for the encapsulation layer is greater, and a better encapsulation of the light emitting unit can be achieved.
Fig. 7 is a schematic diagram of a display device according to the present application, and referring to fig. 7, the present application also discloses a display device, and the display device 200 includes a driving circuit 210 and the display panel 100 according to any of the foregoing embodiments, where the driving circuit 210 is used to drive the display panel 100 to display.
It should be noted that, the inventive concept of the present application can form a very large number of embodiments, but the application documents are limited in space and cannot be listed one by one, so that on the premise of no conflict, the above-described embodiments or technical features can be arbitrarily combined to form new embodiments, and after the embodiments or technical features are combined, the original technical effects will be enhanced.
The above description of the application in connection with specific alternative embodiments is further detailed and it is not intended that the application be limited to the specific embodiments disclosed. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the application, and these should be considered to be within the scope of the application.