CN119803007A - Wafer rotary drying mechanism - Google Patents
Wafer rotary drying mechanism Download PDFInfo
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- CN119803007A CN119803007A CN202510307296.XA CN202510307296A CN119803007A CN 119803007 A CN119803007 A CN 119803007A CN 202510307296 A CN202510307296 A CN 202510307296A CN 119803007 A CN119803007 A CN 119803007A
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Abstract
本发明公开了一种晶圆旋转干燥机构，包括，旋转平台；卡爪，连接于所述旋转平台，其数量为多个，且周向间隔分布；卡爪朝向晶圆一侧具有支撑面和夹持面，或者，卡爪和旋转平台配合形成支撑面和夹持面，支撑面和夹持面用于共同夹持晶圆；支撑面和夹持面之间具有离心导排液槽，当支撑面和夹持面夹持晶圆，该离心导排液槽的至少部分位于晶圆下表面所在高度以下，于晶圆旋转时，滞留在晶圆背面的液体在离心力作用下进入离心导排液槽，并通过离心力向外排出。本发明设计了离心导排液槽能够在离心旋转干燥过程中为径向流过支撑面及其附近的液体提供离开晶圆的导引和排出空间，使得残留液体能够顺利排出。
The present invention discloses a wafer rotary drying mechanism, comprising a rotating platform; a plurality of claws connected to the rotating platform, which are circumferentially spaced; the claws have a support surface and a clamping surface facing the wafer, or the claws and the rotating platform cooperate to form a support surface and a clamping surface, and the support surface and the clamping surface are used to clamp the wafer together; a centrifugal drainage liquid groove is provided between the support surface and the clamping surface, and when the support surface and the clamping surface clamp the wafer, at least part of the centrifugal drainage liquid groove is located below the height of the lower surface of the wafer, and when the wafer rotates, the liquid retained on the back of the wafer enters the centrifugal drainage liquid groove under the action of centrifugal force, and is discharged outwardly by the centrifugal force. The present invention designs a centrifugal drainage liquid groove that can provide a guiding and discharge space for the liquid radially flowing through the support surface and its vicinity to leave the wafer during the centrifugal rotary drying process, so that the residual liquid can be discharged smoothly.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and particularly relates to a wafer rotary drying mechanism.
Background
In semiconductor wafer manufacturing, wafer cleaning and drying are key links throughout the whole process, and are mainly used for removing pollutants, improving yield and guaranteeing stability of subsequent processes. Six key links of photoetching, ion implantation, CMP, etching, grinding and packaging of through wafer manufacturing are cleaned and dried, and the performance and the yield of the device are directly affected. The future trend is to combine wet and dry techniques and develop low energy consumption, high uniformity automated cleaning schemes.
With the continuous progress of semiconductor manufacturing technology, the requirements for cleaning and drying by Chemical Mechanical Planarization (CMP) equipment (CHEMICAL MECHANICAL Planarization) are increasing. During wet wafer processing, it is important to ensure that the wafer is thoroughly dried and to prevent particles in the solution from reattaching to its surface. If the wafer is not sufficiently dried, particles in the solution may affect semiconductor device performance, resulting in device failure. Therefore, the effective removal of liquid from the wafer plays a key role in ensuring the normal operation of the equipment. CMP equipment must employ proper methods to achieve efficient drying of wafers to ensure production quality and equipment stability.
In most CMP apparatuses, wafer drying typically employs a spin-drying process. The method mainly comprises a clamping device and a supporting device in terms of structure. In the drying mechanism, the wafer has three stages, namely, the wafer is placed on a supporting device before ① is dried, the front and the back of the wafer are wet, a clamping device clamps the wafer in the ② centrifugal rotation drying process, the wafer is rotated, liquid on the front and the back of the wafer is required to be completely dried in the process due to the action of centrifugal force to realize drying, the wafer is stopped rotating after ③ drying, the clamping device releases the wafer, the wafer is completely dried, the drying mechanism completes the drying work, and the wafer can enter the next procedure. Whether the wafer can reach a fully dry state or not is critical in the centrifugal spin drying process of stage ②, and the implementation of the wafer drying depends on whether the wafer can be fully spin-dried in the centrifugal spin drying process of ②. The working principle of the wafer drying is that the clamping device can passively drive and fix the wafer by centrifugal force or actively drive by means of a cylinder, a magnet and the like in the centrifugal rotation drying process of the wafer placed on the supporting device in the stage ②. The rotating motor drives the clamping device to rotate, so that the rotation of the wafer is realized, and the centrifugal force throws away the liquid on the wafer, so that the drying is realized.
However, in the practical use process, a problem that the back surface is always in contact with the supporting device when the wafer rotates, and a small included angle and a water storage space are formed between the back surface of the wafer and the supporting device is solved. In the spin-drying stage, when the liquid wetting the back surface of the wafer leaves the wafer radially from the center to the periphery, the liquid flowing radially through the supporting means and the vicinity thereof is easily sucked into the space due to the capillary effect, as shown in fig. 23 and 24, so that although most of the front and back surfaces of the wafer can be spin-dried, the liquid at and in the vicinity of the contact of the back surface of the wafer with the supporting means (the space where the liquid is sucked due to the capillary effect) is difficult to spin-dry, and when the centrifugal spin-drying process of ② is finished, the wafer stops rotating, water drops and water stains remain at and in the vicinity of the contact of the back surface of the wafer with the supporting means, which are not allowed (normally, the water drops and water stains cannot remain at the entire back surface of the wafer). For high standard high process CMP equipment, the dryness and cleanliness of the wafer backside are important indicators for the evaluation process. These residual water droplets and water stains will seriously affect the quality of completion and the efficiency of completion of the overall process of the CMP apparatus.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a wafer rotary drying mechanism. The centrifugal rotary drying device solves the problems that water drops and water stains are easy to remain and are difficult to remove at the contact position of the back of the wafer and the supporting surface and the vicinity thereof in the centrifugal rotary drying process.
The technical proposal adopted by the invention for solving the technical problems is that the wafer rotary drying mechanism comprises,
Rotating the platform;
The clamping claws are connected to the rotary platform, are multiple in number and are circumferentially distributed at intervals;
The clamping jaw is provided with a supporting surface and a clamping surface on one side facing the wafer, or the clamping jaw and the rotary platform are matched to form the supporting surface and the clamping surface, and the supporting surface and the clamping surface are used for clamping the wafer together;
And a centrifugal liquid guide and discharge groove is arranged between the supporting surface and the clamping surface, when the supporting surface and the clamping surface clamp the wafer, at least part of the centrifugal liquid guide and discharge groove is positioned below the height of the lower surface of the wafer, and when the wafer rotates, liquid retained on the back surface of the wafer enters the centrifugal liquid guide and discharge groove under the action of centrifugal force and is discharged outwards through the centrifugal force.
Further, a gap exists between the back surface of the wafer and the supporting surface, and part of liquid is retained in the gap due to capillary effect.
Further, at least part of the centrifugal drainage liquid groove is parallel to the tangential direction of the wafer placed on the rotating platform.
Further, the centrifugal liquid guiding and draining grooves are arc-shaped, and the fitted circles of the centrifugal liquid guiding and draining grooves of the clamping jaws are concentric with the wafer placed on the rotating platform.
Further, at least part of the centrifugal drainage liquid groove is positioned below the height of the lower surface of the wafer, and the centrifugal drainage liquid groove comprises a state that the wafer is static to be placed on a rotating platform and also comprises a state that the wafer and the rotating platform rotate at a high speed.
Further, both ends of the centrifugal drainage liquid guide groove are open.
Further, the wafer side surface is provided with at least a lower rounded section and a flat section, and the centrifugal drain guide groove is provided with an opening, and the width of the opening is smaller than or equal to the width of the lower rounded section.
Further, the wafer side surface is provided with at least a lower round angle section and a flat section, and the clamping surface is propped against the flat section.
Further, the centrifugal drainage guide groove is provided with an opening, and the height of the opening is smaller than or equal to that of the lower round corner section.
Furthermore, the side surface of the wafer is provided with an upper round angle section, and the clamping jaw is provided with a limiting surface for preventing the wafer from being separated upwards, and the limiting surface is positioned above the clamping surface and can prop against the upper round angle section.
Further, the center of the centrifugal drainage liquid groove is positioned below the highest height of the supporting surface.
Further, the inner wall of the centrifugal liquid guiding and draining groove is an arc surface.
Further, the supporting surface comprises a horizontal placing surface and a climbing surface arranged on the outer peripheral side of the horizontal placing surface, and the centrifugal liquid guiding and draining groove is arranged between the clamping surface and the climbing surface.
Further, the climbing surface is an arc climbing surface.
Further, the number of the rotary platforms is one, the number of the clamping claws is three or more, the clamping claws are uniformly distributed at intervals along the circumferential direction of the rotary platforms, when the rotary platforms rotate, the upper parts of the clamping claws rotate inwards and downwards, and the supporting surfaces and the clamping surfaces jointly clamp a wafer;
or alternatively
The plurality of rotary platforms are connected to the rotary base, the clamping jaws are eccentrically connected to the rotary platforms, and when the rotary platforms rotate, the clamping jaws rotate along with the rotary platforms to be close to the wafer.
The centrifugal liquid guide and discharge groove has the beneficial effects that 1) in the centrifugal rotation process, liquid is easy to store in a tiny gap between the back surface of the wafer and the supporting surface, and is difficult to spin-dry due to capillary effect and surface tension, so that water drops and water stains are easy to remain at and near the contact position of the back surface of the wafer and the supporting surface after drying are difficult to remove, and the centrifugal liquid guide and discharge groove is designed to provide guiding and discharge space for liquid flowing through the supporting surface and the nearby in the radial direction in the centrifugal rotation drying process, so that the residual liquid can be smoothly discharged; the centrifugal drainage liquid tank is designed to be capable of draining and exhausting liquid at the same time, 4) the centrifugal drainage liquid tank is arranged to not influence the stable clamping of the wafer in the process of ② centrifugal rotation drying, namely, a clamping surface and a wafer flat section have sufficient contact area to provide enough friction force to ensure that the wafer is stably clamped, and a supporting surface is contacted with a lower round section of the wafer to avoid scratches on the back surface of the wafer, 5) the centrifugal drainage liquid tank is skillfully structured to design that the centrifugal drainage liquid tank is at least partially positioned below the height of the lower surface of the wafer, so that residual liquid is prevented from being reversely splashed back to the back surface of the wafer after entering the centrifugal drainage tank to avoid forming water stain on the back surface of the wafer, 6) a limiting surface is abutted against the round section of the wafer to form a limiting function on the wafer to avoid the separation of the wafer, 7) the residual liquid at the contact position of the back surface and the supporting surface of the wafer is smoothly discharged through the centrifugal drainage liquid tank under the effect of the centrifugal force to avoid the formation of water stain, the improvement not only solves a great disadvantage of the original structure, but also has extremely high practicability and compatibility without greatly changing the original structure, 8) not only improves the working efficiency and level, but also promotes the development of the existing equipment to higher manufacturing procedures, and simultaneously further improves the cleaning effect of the wafer back, and provides more reliable guarantee for the high manufacturing procedure application of the CMP machine, and 9) the centrifugal liquid guiding and draining groove structure can adapt to clamping claws of different structures and is suitable for the post-cleaning of semiconductor manufacturing procedures of different stages, and has high adaptability.
Drawings
Fig. 1 is a side view of a wafer in accordance with the present invention.
Fig. 2 is a perspective view showing a first configuration of the wafer spin-drying mechanism and wafer cooperation in accordance with the present invention.
Fig. 3 is a partial perspective view of a first type of wafer spin-drying mechanism according to the present invention.
Fig. 4 is an enlarged view of the structure at a in fig. 3.
Fig. 5 is a partial perspective view of a first type of wafer spin-drying mechanism according to the present invention.
Fig. 6 is an enlarged view of the structure at B in fig. 5.
Fig. 7 is a schematic view of a part of a structure of a claw of a first structure wafer spin dryer mechanism according to the present invention.
Fig. 8 is a partial schematic view of a first configuration of the wafer spin-drying mechanism and wafer cooperation according to the present invention.
Fig. 9 is a schematic view of a part of a centrifugal drain chute of a first structure of a wafer spin dryer according to the present invention.
Fig. 10 is a perspective view of a wafer spin-drying mechanism of a second configuration in accordance with the present invention.
Fig. 11 is an enlarged view of the structure at C in fig. 10.
Fig. 12 is a side view of a portion of a second embodiment of a rotary wafer drying mechanism according to the present invention.
FIG. 13 is a partial schematic view of a second embodiment of the wafer spin-drying mechanism and wafer cooperation according to the present invention.
Fig. 14 is a schematic view of a part of a centrifugal drain chute of a wafer spin dryer mechanism with a second structure according to the present invention.
Fig. 15 is a schematic diagram showing a cooperation structure of a claw and a rotary platform of a wafer rotary drying mechanism with a third structure according to the present invention.
Fig. 16 is a side view of a third embodiment of a pawl and rotary table engagement structure of a wafer spin dryer mechanism according to the present invention.
FIG. 17 is a partial schematic view of a third embodiment of the wafer spin-drying mechanism and wafer cooperation according to the present invention.
Fig. 18 is a schematic view of a portion of a centrifugal drain chute of a third structure of a wafer spin dryer mechanism according to the present invention.
FIG. 19 is a top view of a centrifugal inverted liquid bath and a wafer placed on a rotating platform in accordance with the present invention.
Fig. 20 is an enlarged view of the structure at D in fig. 19.
FIG. 21 is a top view of a centrifugal inverted liquid bath and a wafer placed on a rotating platform according to the present invention.
Fig. 22 is an enlarged view of the structure at E in fig. 21.
Fig. 23 is a partial schematic view of a wafer mated with a support apparatus in the prior art.
Fig. 24 is an enlarged view of the structure at F in fig. 23, and reference numeral 6 is a space where liquid is sucked by capillary effect.
The device comprises a 1-rotating platform, a 2-claw, a 21-limiting surface, a 3-wafer, a 31-lower round corner section, a 32-straight section, a 33-upper round corner section, a 41-supporting surface, a 411-horizontal placing surface, a 412-climbing surface, a 42-clamping surface, a 5-centrifugal liquid guiding and draining groove, a 51-opening and a 6-liquid sucking space due to capillary effect.
Detailed Description
In order to make the present invention better understood by those skilled in the art, the following description will make clear and complete descriptions of the technical solutions of the embodiments of the present invention with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
The wafer rotary drying mechanism comprises one or more rotary platforms 1 and a plurality of clamping claws 2 connected to the rotary platforms 1, wherein the clamping claws 2 are circumferentially distributed at intervals, and the circumferential direction can be along the circumferential direction of a wafer 3 or along the circumferential direction of the rotary platforms 1, and the wafer rotary drying mechanism is not particularly limited. Specifically, one jaw 2 may be disposed on one rotary platform 1, where the number of jaws 2 and rotary platforms 1 is plural, and plural rotary platforms 1 are connected to the same rotary base (not shown in the figure), or plural jaws 2 may be disposed on one rotary platform 1, where the number of jaws 2 is plural, and the number of rotary platforms 1 is one.
The side of the clamping jaw 2 facing the wafer 3 has a support surface 41 and a clamping surface 42, or the clamping jaw 2 and the rotary table 1 cooperate to form the support surface 41 and the clamping surface 42, which support surface 41 and clamping surface 42 serve for jointly clamping the wafer 3.
The centrifugal liquid guiding and draining groove 5 is arranged between the supporting surface 41 and the clamping surface 42, when the supporting surface 41 and the clamping surface 42 clamp the wafer 3, namely ②, in the centrifugal rotary drying process, at least part of the centrifugal liquid guiding and draining groove 5 is positioned below the height of the lower surface of the wafer 3, so that liquid which radially flows through the supporting device and the vicinity thereof in the ② centrifugal rotary drying process can be smoothly drained through the centrifugal liquid guiding and draining groove 5, particularly, the liquid can not be accumulated in a narrow gap between the back surface of the wafer 3 and the supporting surface 41, the liquid on the back surface of the wafer 3 can be drained through the centrifugal liquid guiding and draining groove 5, namely, the liquid sucked between the back surface of the wafer 3 and the supporting surface 41 due to capillary effect is drained through the centrifugal liquid guiding and draining groove 5 under the centrifugal force, and the formation of water stain on the surface of the wafer 3 is avoided. Of course, the centrifugal drainage groove 5 not only can play a role of drainage, but also can play a role of exhaust, so that the surface tension of the liquid is effectively reduced, and the centrifugal drainage groove 5 is beneficial to draining the liquid.
In this embodiment, the two ends of the centrifugal drainage liquid guiding groove 5 are opened, so that when the rotary platform 1 and the clamping jaw 2 rotate with the wafer 3, the liquid retained on the back surface of the wafer 3 enters the centrifugal drainage liquid guiding groove 5 under the action of centrifugal force, and the liquid in the centrifugal drainage liquid guiding groove 5 is directly discharged outwards through the opening openings at the two ends under the action of the centrifugal force, so that the liquid is effectively prevented from flowing back to the back surface of the wafer 3, and the drying effect is better.
As shown in fig. 19 and 20, at least part of the centrifugal drainage liquid groove 5 is parallel to the tangential direction of the wafer 3 placed on the rotating platform 1, the direction of liquid throwing out on the wafer 3 is approximately the tangential direction of the wafer under the action of centrifugal force, the centrifugal drainage liquid groove 5 is designed to be parallel to the tangential direction of the wafer, and the liquid thrown out on the surface of the wafer 3 can be discharged to two open ends of the centrifugal drainage liquid groove 5 more quickly.
As shown in fig. 21 and 22, the centrifugal drain grooves 5 may be circular arc-shaped, and the circle fitted by the centrifugal drain grooves 5 of the plurality of claws 2 is concentric with the wafer 3 placed on the rotary table 1, in other words, the centrifugal drain grooves 5 are parallel to the outer periphery of the wafer 3.
Because the length of the centrifugal liquid guiding and draining groove 5 is very small compared with the peripheral length of the wafer 3, the circular arc central angle of the centrifugal liquid guiding and draining groove is also small, and liquid cannot fall back to the surface of the wafer 3 when being thrown out from the centrifugal liquid guiding and draining groove 5.
As shown in fig. 2 to 9, the number of the rotary platforms 1 is one, the number of the claws 2 is three, the claws are circumferentially and uniformly connected to the rotary platforms 1at intervals and rotationally connected to the rotary platforms 1, and of course, the number of the claws 2 can be more than three. The supporting surface 41 is disposed on the rotary platform 1, the supporting surface 41 is a slope structure (in the direction shown in fig. 8, the inner side refers to the inner side where the center of the wafer 3 is located) inclined from bottom to top and from inside to outside, and the clamping surface 42 is disposed on the clamping jaw 2.
When the rotary table 1 rotates, the upper portions of the claws 2 rotate inward and downward by centrifugal force, and the supporting surface 41 and the holding surface 42 hold the wafer 3 together. At this time, the centrifugal drainage guide groove 5 is formed by matching the claw 2 with the rotary platform 1, namely, part of the centrifugal drainage guide groove 5 is positioned on the claw 2, and part of the centrifugal drainage guide groove 5 is positioned on the rotary platform 1.
As shown in fig. 1 and 9, the wafer 3 has a lower rounded section 31, a flat section 32, and an upper rounded section 33 on the side. The clamping surface 42 abuts against the flat section 32, in other words, in the present embodiment, the clamping surface 42 is a vertical plane, or at least in the state of clamping the wafer 3, the clamping surface 42 is a plane in the vertical state.
As shown in fig. 9, the centrifugal drain groove 5 has an opening 51, and the width of the opening 51 is equal to or smaller than the width of the lower rounded segment 31. Here, the width of the opening 51 is L1, specifically, when the claw 2 is located below the clamping surface 42 to form an arc groove, the supporting surface 41 of the rotary table 1 is also formed with an arc groove, and the arc grooves are combined to form the opening 51 of the centrifugal drain guide groove 5 in the state of clamping the wafer 3. The width of the lower fillet section 31 refers to the horizontal distance between two end points of the lower fillet section 31, namely L2 and L1 are less than or equal to L2 in fig. 1, so that the wafer 3 is ensured to be horizontally placed on the supporting surface 41 and is clamped by the supporting surface 41 and the clamping surface 42 in the whole process, the supporting surface 41 is always in contact with the lower fillet section 31 of the wafer 3, and the straight part of the back surface of the wafer 3 is prevented from being in contact with the supporting surface 41 as much as possible, so that scratches on the back surface of the wafer 3 are avoided.
The height of the opening 51 of the centrifugal drain chute 5 is smaller than or equal to the height of the lower fillet section 31, wherein the height of the lower fillet section 31 refers to the vertical distance between two endpoints of the lower fillet section 31, namely S in fig. 1, and the height of the opening 51 of the centrifugal drain chute 5 is H in fig. 9, and H is smaller than or equal to S, so that the clamping surface 42 can abut against the flat section 32 of the side surface of the wafer 3 as much as possible when the wafer 3 is clamped, and a sufficient contact area is ensured between the clamping surface 42 and the wafer 3 to provide sufficient friction force to ensure that the wafer 3 is firmly clamped and prevent the wafer 3 from flying out.
In order to prevent the wafer 3 from being separated upwards during the high-speed rotation, as shown in fig. 9, the claw 2 is provided with a limiting surface 21 for preventing the wafer 3 from being separated upwards, and the limiting surface 21 is positioned above the clamping surface 42 and extends obliquely from top to bottom and from inside to outside, so that in the state of clamping the wafer 3, the limiting surface 21 can abut against the upper fillet section 33, and the limiting surface 21 forms downward and inward acting force on the wafer 3.
The center of the centrifugal drain chute 5 is located below the height of the supporting surface 41, specifically the maximum height of the supporting surface 41, so that the liquid from the spin drying of the wafer 3 will not flow back to the wafer 3, or as little liquid as possible will be splashed back onto the back surface of the wafer 3.
As described above, the centrifugal drain guide groove 5 is formed by the arc grooves of the supporting surface 41 and the claw 2 being joined together, so that the inner wall of the centrifugal drain guide groove 5 is an arc surface. The combination of the circular arc surface shape of the centrifugal liquid guiding and draining groove 5 and the position of the center of the circular arc surface shape below the height of the supporting surface 41 can prevent residual liquid from entering the centrifugal liquid guiding and draining groove 5 and then reversely splashing back to the back surface of the wafer 3, water drops enter from the opening 51 of the centrifugal liquid guiding and draining groove 5 and bounce back after striking the inner wall of the circular arc surface of the centrifugal liquid guiding and draining groove 5, and most of the water drops can move towards the center of the centrifugal liquid guiding and draining groove 5 after bouncing back from any angle of the opening 51 of the centrifugal liquid guiding and draining groove 5, and because the center position of the centrifugal liquid guiding and draining groove 5 is arranged below the back surface of the wafer 3, the liquid entering the centrifugal liquid guiding and draining groove 5 can be well guided towards the position below the back surface of the wafer 3, so that the water drops are prevented from reversely splashing back to the back surface of the wafer 3 and forming water stains on the back surface of the wafer 3. Of course, in other embodiments, the specific shape of the centrifugal drain grooves 5 may not be limited.
Unlike the above-mentioned structure of the supporting surface 41 and the holding surface 42 formed by the cooperation of the claw 2 and the rotary table 1, as shown in fig. 10 to 14, the supporting surface 41 and the holding surface 42 are both provided on the claw 2, and the centrifugal drainage guide groove 5 is provided on the claw 2 and is located between the supporting surface 41 and the holding surface 42.
At this time, the centrifugal drain groove 5 is not formed by splicing two parts, but is in a definite shape, except that the opening 51 of the centrifugal drain groove 5 faces upwards when the clamping jaw 2 is in a state of not clamping the wafer 3, and the opening 51 of the centrifugal drain groove 5 faces to the lower round corner section 31 of the wafer 3 when the clamping jaw 2 is in a state of clamping the wafer 3. Regarding the width and height of the opening 51 of the centrifugal drain chute 5, the center of the centrifugal drain chute 5 is the same as the wafer spin-drying mechanism of the first structure, and will not be described again.
As shown in fig. 11, the support surface 41 includes a horizontal placement surface 411, that is, a climbing surface 412 provided on the outer peripheral side of the horizontal placement surface 411, and the centrifugal drain guide groove 5 is located between the holding surface 42 and the climbing surface 412, and the climbing surface 412 is an arc-shaped climbing surface. The wafer 3 is placed on the horizontal placing surface 411, the platform 1 is rotated to be rotated, the upper part of the claw 2 is rotated inwards and downwards under the action of centrifugal force, the wafer 3 moves along the climbing surface 412, and finally the climbing surface 412 and the clamping surface 42 jointly clamp the wafer 3.
The center of the centrifugal drain chute 5 is located below the highest level of the climbing surface 412, in other words, the center of the circular arc-shaped centrifugal drain chute 5 is located obliquely below the outer side of the wafer.
Other structures of the wafer rotary drying mechanism with the second structure are the same as those of the first structure, and are not repeated.
As shown in fig. 15-18, in the wafer rotary drying mechanism with the third structure, a cylinder with a larger outer diameter at the lower part is a rotary platform 1, a structure with an eccentric connection at the upper part is a claw 2, a rotary base (not shown in the figure) connects a plurality of rotary platforms 1 into a whole, the rotary platform 1 can rotate relative to the rotary base, and the rotary base drives the rotary platforms 1, the claws 2 and the wafer 3 to rotate together at a high speed, so that centrifugal rotary drying of the wafer 3 is realized.
The wafer 3 is placed on the supporting surface 41 of the claw 2, in this embodiment, the supporting surface 41 is an inclined surface structure (in the direction shown in fig. 16, the inner side of the center of the wafer 3 is referred to herein as the inner side) inclined from bottom to top, and at this time, the wafer 3 is not contacted with the holding surface 42, and then the claw 2 rotates along with the rotating platform 1 relative to the rotating base, so that the claw 2 is close to the wafer 3, so that the holding surface 42 contacts with the flat section 32 of the wafer 3, and the holding of the wafer 3 by the supporting surface 41 and the holding surface 42 is realized.
Other structures of the third structure wafer rotary drying mechanism are the same as those of the second structure, and are not described again.
The wafer rotary drying mechanism can be applied to a photoetching link in wafer manufacturing, an ion implantation link in wafer manufacturing, a CMP link in wafer manufacturing, an etching link in wafer manufacturing, a grinding link in wafer manufacturing, or a packaging link in wafer manufacturing, and is not particularly limited.
The foregoing detailed description is provided to illustrate the present invention and not to limit the invention, and any modifications and changes made to the present invention within the spirit of the present invention and the scope of the appended claims fall within the scope of the present invention.
Claims (15)
1. A wafer spin-drying mechanism comprises,
A rotary platform (1);
the clamping claws (2) are connected to the rotary platform (1), are multiple in number and are circumferentially distributed at intervals;
The clamping jaw (2) is provided with a supporting surface (41) and a clamping surface (42) at one side facing the wafer (3), or the clamping jaw (2) and the rotary platform (1) are matched to form the supporting surface (41) and the clamping surface (42), and the supporting surface (41) and the clamping surface (42) are used for jointly clamping the wafer (3);
The centrifugal liquid guiding and draining groove is characterized in that a centrifugal liquid guiding and draining groove (5) is arranged between the supporting surface (41) and the clamping surface (42), when the supporting surface (41) and the clamping surface (42) clamp the wafer (3), at least part of the centrifugal liquid guiding and draining groove (5) is positioned below the height of the lower surface of the wafer (3), and when the wafer (3) rotates, liquid retained on the back surface of the wafer (3) enters the centrifugal liquid guiding and draining groove (5) under the action of centrifugal force and is drained outwards through the centrifugal force.
2. The wafer spin-drying mechanism according to claim 1, wherein a gap exists between the back surface of the wafer (3) and the supporting surface (41), and a part of the liquid is retained in the gap due to capillary effect.
3. The wafer spin drying mechanism of claim 1, wherein at least a portion of the centrifugal drain grooves (5) are parallel to a tangential direction of a wafer (3) placed on the spin table (1).
4. The wafer spin drying mechanism of claim 1, wherein the centrifugal drain grooves (5) are circular arc-shaped, and the circle fitted by the centrifugal drain grooves (5) of the plurality of claws (2) is concentric with the wafer (3) placed on the spin platform (1).
5. The wafer spin dryer of claim 1, wherein at least a portion of the centrifugal drain grooves (5) are located below the level of the lower surface of the wafer (3), and the centrifugal drain grooves comprise a state in which the wafer (3) is stationary on the spin table (1) and a state in which the wafer (3) and the spin table (1) are rotated at a high speed.
6. The wafer spin drying mechanism according to claim 1 or 3, wherein both ends of the centrifugal drain grooves (5) are opened.
7. The wafer spin drying mechanism according to claim 1, wherein the side surface of the wafer (3) has at least a lower rounded section (31) and a flat section (32), and the centrifugal drain chute (5) has an opening (51), and the width of the opening (51) is equal to or smaller than the width of the lower rounded section (31).
8. The rotary wafer drying mechanism according to claim 1, wherein the wafer (3) has at least a lower rounded section (31) and a flat section (32) on a side surface thereof, and the holding surface (42) is abutted against the flat section (32).
9. The wafer spin drying mechanism according to claim 8, wherein the centrifugal drain chute (5) has an opening (51), and the height of the opening (51) is equal to or less than the height of the lower rounded section (31).
10. The rotary wafer drying mechanism as set forth in claim 8, wherein the wafer (3) has an upper rounded section (33) on a side surface thereof, and the claw (2) is provided with a limit surface (21) for preventing the wafer (3) from being separated upward, and the limit surface (21) is located above the holding surface (42) and can abut against the upper rounded section (33).
11. The wafer spin drying mechanism of claim 1, wherein the center of the centrifugal drain chute (5) is located below the highest elevation of the support surface (41).
12. The wafer spin drying mechanism according to claim 1 or 11, wherein the inner wall of the centrifugal drain chute (5) is an arc surface.
13. The wafer spin drying mechanism according to claim 1, wherein the support surface (41) comprises a horizontal placement surface (411) and a climbing surface (412) provided on an outer peripheral side of the horizontal placement surface (411), and the centrifugal drain guide groove (5) is located between the holding surface (42) and the climbing surface (412).
14. The wafer spin drying mechanism of claim 13, wherein said climbing surface (412) is an arcuate climbing surface.
15. The wafer spin drying mechanism of claim 1, wherein:
The number of the rotary platforms (1) is one, the number of the clamping claws (2) is three or more, the clamping claws are uniformly distributed at intervals along the circumferential direction of the rotary platforms (1), when the rotary platforms (1) rotate, the upper parts of the clamping claws (2) rotate inwards and downwards, and the supporting surfaces (41) and the clamping surfaces (42) jointly clamp the wafer (3);
or alternatively
The plurality of rotary platforms (1) are connected to the rotary base, the clamping claws (2) are eccentrically connected to the rotary platforms (1), and when the rotary platforms (1) rotate, the clamping claws (2) rotate along with the rotary platforms (1) to be close to the wafer (3).
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| CN202510307296.XA CN119803007A (en) | 2025-03-17 | 2025-03-17 | Wafer rotary drying mechanism |
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| CN202510307296.XA CN119803007A (en) | 2025-03-17 | 2025-03-17 | Wafer rotary drying mechanism |
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| CN119803007A true CN119803007A (en) | 2025-04-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN120878629A (en) * | 2025-09-24 | 2025-10-31 | 杭州众硅电子科技有限公司 | Wafer clamping mechanism and wafer cleaning and spin-drying method |
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