CN119673818A - Gallium nitride power electronic device preparation method and gallium nitride power electronic device - Google Patents
Gallium nitride power electronic device preparation method and gallium nitride power electronic device Download PDFInfo
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Abstract
本发明提供一种氮化镓功率电子器件制备方法和氮化镓功率电子器件，涉及半导体技术领域。方法包括：在制备完成的器件的正面键合一加强板；由所述器件背面对所述器件的衬底全局进行减薄处理，以使所述衬底减薄至预设的厚度范围；在所述衬底的背面加工散热孔；在所述衬底的背面和所述散热孔内设置导热材料，以在所述衬底的背面形成导热层；将所述加强板解除键合。本申请提供的氮化镓功率电子器件制备方法可减薄衬底并可避免衬底出现碎片的问题，并通过设置导热层增强器件散热能力，从而提高器件性能和可靠性。
The present invention provides a method for preparing a gallium nitride power electronic device and a gallium nitride power electronic device, and relates to the field of semiconductor technology. The method comprises: bonding a reinforcing plate to the front of the prepared device; thinning the substrate of the device from the back of the device to thin the substrate to a preset thickness range; processing heat dissipation holes on the back of the substrate; setting a heat-conducting material on the back of the substrate and in the heat-conducting holes to form a heat-conducting layer on the back of the substrate; and releasing the bonding of the reinforcing plate. The method for preparing a gallium nitride power electronic device provided in the present application can thin the substrate and avoid the problem of substrate fragmentation, and enhance the heat dissipation capacity of the device by setting a heat-conducting layer, thereby improving the device performance and reliability.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a gallium nitride power electronic device and a preparation method thereof.
Background
Gallium nitride power electronic devices have the advantages of wide band gap, high breakdown field strength, high electron mobility, high power density and the like, and have great potential in high-temperature, high-frequency and high-power electronic applications.
Gallium nitride power electronic devices are used in the field of small power such as mobile phone fast charging, and the application fields of higher power such as data centers and automobile electronics are being studied, however, after the power density is improved, the performance and reliability of the gallium nitride power devices are severely restricted by the heat dissipation problem, in order to improve the heat dissipation capacity of the gallium nitride HEMT power devices, the main current method is to thin a substrate, enhance the heat conduction capacity from the devices to a bracket, but the substrate is too thin, and the devices are easy to break in the subsequent processing technology.
Disclosure of Invention
The invention aims to provide a gallium nitride power electronic device and a preparation method thereof, which can improve the heat dissipation performance of the gallium nitride power device and improve the problem of fragmentation.
Embodiments of the invention may be implemented as follows:
In a first aspect, the present invention provides a method for preparing a gallium nitride power electronic device, the method comprising:
Bonding a reinforcing plate on the front surface of the prepared device;
globally thinning the substrate of the device from the back of the device to enable the substrate to be thinned to a preset thickness range;
processing a heat radiation hole on the back of the substrate;
a heat conducting material is arranged on the back surface of the substrate and in the heat dissipation holes so as to form a heat conducting layer on the back surface of the substrate;
And (5) de-bonding the reinforcing plate.
In an alternative embodiment, the stiffener is made of transparent material, so that the lithographic apparatus can obtain the mark on the front surface of the device through the stiffener.
In an alternative embodiment, the reinforcing plate is a glass or sapphire sheet.
In an alternative embodiment, the stiffener is bonded to the front side of the device by the bonding glue.
In an alternative embodiment, the step of globally thinning the substrate of the device from the back of the device to a preset thickness range includes:
And adopting grinding equipment to globally thin the back surface of the substrate so as to thin the thickness of the substrate to 40-300 mu m.
In an alternative embodiment, the heat dissipation holes are honeycomb-shaped, and the diameter of each heat dissipation hole ranges from 10um to 200um.
In an alternative embodiment, the back surface of the substrate has a first region corresponding to the device active region and a second region corresponding to the device inactive region;
The first area and the second area are both provided with the radiating holes, the area of the radiating holes of the first area is 40% -70%, and the area of the radiating holes of the second area is 15% -40%.
In an alternative embodiment, the thermally conductive layer is copper;
the step of disposing a heat conductive material on the back surface of the substrate and in the heat dissipation hole to form a heat conductive layer on the back surface of the substrate includes:
depositing a metal seed layer on the back surface of the substrate in a magnetron sputtering mode;
The device was then placed in an electroplating apparatus for electroplating deposition of copper 5 μm to 100 μm thick.
In an alternative embodiment, the device comprises:
A substrate;
the GaN buffer layer is arranged on the surface of the substrate;
the GaN channel layer is arranged on the surface, far away from the substrate, of the GaN buffer layer;
The AlGaN barrier layer is arranged on the surface, far away from the GaN buffer layer, of the GaN channel layer;
the electrode layer is arranged on one side of the AlGaN barrier layer, which is far away from the substrate, and is provided with a grid electrode, a source electrode and a drain electrode;
the surface of the side, away from the buffer layer, of the substrate is the back surface of the device, and the surface of the side, away from the barrier layer, of the electrode layer is the front surface of the device.
In a second aspect, the present invention provides a gallium nitride power electronic device prepared by the gallium nitride power electronic device preparation method according to any one of the preceding embodiments.
The gallium nitride power electronic device manufacturing method and the gallium nitride power electronic device provided by the embodiment of the invention have the beneficial effects that:
According to the preparation method provided by the application, the mechanical strength of the device can be improved by bonding the reinforcing plate on the front side of the prepared device, the front side of the prepared device can be protected, and then the substrate on the back side of the prepared device is thinned, so that the problems of breakage in thinning, preparing heat dissipation holes and forming a heat conducting layer in the processes can be solved due to the support of the reinforcing plate. And secondly, the honeycomb-shaped radiating holes on the substrate surface are beneficial to the uniform release of the stress of the epitaxial layer, so that the stress accumulation and the warping of the thinned device are relieved, and the problem that the substrate breaks after being thinned is also solved. The application also processes the heat dissipation hole on the back of the substrate, and sets the heat conduction material on the back of the substrate and in the heat dissipation hole to form the heat conduction layer on the back of the substrate, so that the heat conduction layer has larger heat conduction coefficient relative to the substrate, and can well conduct heat away. In addition, the thickness of the partial area can be further reduced by the arrangement of the radiating holes, and the heat conduction effect is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a device manufactured by the gallium nitride power electronic device manufacturing process according to the present embodiment;
Fig. 2 is a schematic structural diagram of the gallium nitride power electronic device manufacturing process according to the present embodiment after a reinforcing plate is bonded to the front surface of the device;
fig. 3 is a schematic diagram of a gallium nitride power electronic device manufacturing process according to the present embodiment after thinning the back of the device;
fig. 4 is a schematic diagram of a gallium nitride power electronic device manufacturing process according to the present embodiment after thinning the back surface of the substrate and processing the heat dissipation holes;
fig. 5 is a schematic layout diagram of a heat dissipation hole on the back of a substrate in the gallium nitride power electronic device manufacturing process according to the embodiment;
fig. 6 is a schematic structural diagram of a gallium nitride power electronic device according to the present embodiment after a heat conducting layer is formed on the back surface of a substrate;
Fig. 7 is a schematic structural diagram of a gan power electronic device after debonding a stiffener in the process for manufacturing a gan power electronic device according to this embodiment.
The icons are 100-gallium nitride power electronic device, 110-device, 111-substrate, 112-GaN buffer layer, 113-GaN channel layer, 114-AlGaN barrier layer, 115-electrode layer, 116-P-GaN layer, 117-SiO2 dielectric layer, 118-gate, 119-source, 121-drain, 122-ion implantation channel isolation layer, 151-stiffener, 152-heat sink, 153-heat conductive layer, 154-bond paste, 155-first region, 156-second region.
Detailed Description
The heat dissipation problem restricts the performance of the gallium nitride power device, in order to improve the heat dissipation capability of the gallium nitride power device, the current mainstream method is to thin the substrate and enhance the heat conduction capability from the device to the bracket, but the substrate is too thin, so that the substrate is easy to break in the subsequent processing technology.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that like reference numerals and letters refer to like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1 to 7, the present application provides a method for manufacturing a gallium nitride power electronic device 100, wherein the gallium nitride power electronic device 100 is a gallium nitride power device 110, and has better heat dissipation performance and a thinner substrate 111.
In this embodiment, the method for manufacturing a gallium nitride power electronic device includes:
Referring to fig. 1 and 2, s1, a reinforcing plate 151 is bonded to the front surface of the fabricated device 110;
Referring to fig. 2 and 3, s2, a thinning process is globally performed on the substrate 111 of the device 110 from the back surface of the device 110, so that the substrate 111 is thinned to a preset thickness range;
Please refer to fig. 3, 4 and 5, s3, processing the heat dissipation hole 152 on the back surface of the substrate 111;
Referring to fig. 4 and 6, s4, a heat conducting material is disposed on the back surface of the substrate 111 and in the heat dissipation holes 152 to form a heat conducting layer 153 on the back surface of the substrate 111;
referring to fig. 6 and 7, s5, the reinforcing plate 151 is de-bonded.
Referring to fig. 1 to 7, the manufacturing method provided in this embodiment can improve the mechanical strength of the device 110 by bonding the reinforcing plate 151 on the front surface of the manufactured device 110, protect the front surface of the manufactured device 110, and then thin the substrate 111 on the back surface of the manufactured device 110, so that the problems of chipping during thinning, manufacturing the heat dissipation holes 152 and forming the heat conduction layer 153 due to the support of the reinforcing plate 151 can be improved. And secondly, the honeycomb-shaped radiating holes of the substrate surface are beneficial to the uniform release of the stress of the epitaxial layer, so that the stress accumulation and the warping of the thinned device are relieved, and the problem that the substrate 111 breaks after being thinned is also solved. The application also processes the heat dissipation hole 152 on the back of the substrate 111, and sets the heat conduction material on the back of the substrate 111 and in the heat dissipation hole 152 to form the heat conduction layer 153 on the back of the substrate 111, so that the heat conduction layer 153 has a larger heat conduction coefficient relative to the substrate 111, and can well conduct heat away. In addition, the heat dissipation holes 152 can further reduce the thickness of the partial area, thereby further improving the heat conduction effect.
The substrate 111 may be one of Si, siC, sapphire, and gallium oxide. Alternatively, the substrate 111 is made of sapphire, the substrate 111 with the size of 4 inches, 6 inches, 8 inches and larger of the sapphire substrate 111 is low in price, a large-size wafer can be prepared, in addition, the sapphire substrate 111 is good in insulativity and mechanical property, and the GaN epitaxial layer is easier to grow.
Since large-sized wafers, such as 4-, 6-, 8-and above wafers, when the thickness of the wafer is set to 40-300 μm, when epitaxial layers are grown on the surface of the substrate 111, the stress increases during the growth of the epitaxial layers due to the difference in lattice constants of GaN and substrate materials, and thin substrates cause the grown wafers to warp and even crack, which is unsuitable for mass production. To accommodate the ease of mass production, the substrate 111 used in the prior art device 110 typically has a thickness of about 450-1000 μm, with the substrate thickness being thicker, even with larger substrate diameters, with the specific thickness being related to the size of the wafer. An increase in the thickness of the substrate 111 may result in a decrease in the heat dissipation capability of the device 110, and a decrease in device performance and reliability.
The device 110 manufactured in this embodiment is a device 110 manufactured in the prior art, in which the thickness of the substrate 111 is relatively thick, and the surface of the substrate 111 is grown with an epitaxial layer, and annealing is performed. In this embodiment, the thinning process of the substrate 111 of the device 110 is post-positioned, so that the thickness of the substrate 111 is thicker when the epitaxial layer is grown on the surface of the substrate 111, thereby improving the problem of chipping.
Referring to fig. 1, in the present embodiment, a completed device 110 includes a substrate 111, a GaN buffer layer 112, a GaN channel layer 113, an AlGaN barrier layer 114, and an electrode layer 115. The thickness of the substrate 111 is thicker than the thickness of the substrate 111 of the thinned device 110. Typically around 450-1000 μm, depending on the size of the device 110. The GaN buffer layer 112 is disposed on the surface of the substrate 111. The GaN channel layer 113 is disposed on a surface of the GaN buffer layer 112 remote from the substrate 111. The AlGaN barrier layer 114 is provided on a surface of the GaN channel layer 113 remote from the GaN buffer layer 112. The electrode layer 115 is provided on a side of the AlGaN barrier layer 114 remote from the substrate 111, and the electrode layer 115 is provided with a gate electrode 118, a source electrode 119, and a drain electrode 121. The GaN channel layer 113 and the AlGaN barrier layer 114 are provided on both sides with ion implantation channel isolation layers 122. A P-GaN layer 116 is provided on the upper surface of the AlGaN barrier layer 114 in a region where a corresponding gate electrode 118 is provided. The corresponding region of the front side is also provided with a SiO 2 dielectric layer 117. The surface of the substrate 111 on the side away from the buffer layer is the back surface of the device 110, and the surface of the electrode layer 115 on the side away from the barrier layer is the front surface of the device 110.
In this embodiment, the stiffener 151 is made of transparent material, so that the lithographic apparatus can obtain the mark on the front surface of the device 110 through the stiffener 151.
Since the heat dissipation holes 152 are processed on the back surface of the substrate 111, the positions need to be determined according to the marks on the front surface of the device 110. In this embodiment, the reinforcing plate 151 is made of a transparent material, so that when the heat dissipation holes 152 are processed by photolithography, the mask can be positioned by the marks on the front surface of the device 110, thereby positioning the heat dissipation holes 152.
In this embodiment, the reinforcing plate 151 is a glass or sapphire sheet. Because the glass or the sapphire sheet has transparent characteristics and strong mechanical supporting performance, the cost is low and the glass or the sapphire sheet can be reused.
Referring to fig. 1 to 7, in the present embodiment, a stiffener 151 is bonded to the front surface of the device 110 by a bonding adhesive 154. Since the stiffener 151 is to be de-bonded in the subsequent process, i.e. removed from the front surface of the device 110, the bonding method of the stiffener 151 by using the bonding adhesive 154 in this embodiment can facilitate bonding and de-bonding, and the bonding adhesive 154 will not affect the electrode layer 115 on the front surface of the device 110.
In this embodiment, step S2 includes the sub-steps of:
and S21, globally thinning the back surface of the substrate 111 by adopting grinding equipment so as to thin the thickness range of the substrate 111 to 40-300 mu m.
It should be noted that, when the polishing apparatus is used for polishing, one side of the reinforcing plate 151 bonded to the front surface of the device 110 is fixed to the polishing apparatus, so that the electrode layer 115 on the front surface of the device 110 is isolated by the reinforcing plate 151, and damage to the electrode layer 115 during polishing can be avoided, and the reinforcing plate 151 can protect the electrode layer 115.
The thickness of the substrate 111 after grinding may be determined according to the size of the device 110. For example, the device 110 may be smaller in size and the thickness of the substrate 111 after grinding may be between 40 μm and 100 μm, such as 40 μm, 75 μm, 100 μm, etc. The thickness of the substrate 111 may be between 100 μm and 300 μm, such as 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, etc., after the device 110 is larger in size.
In the present embodiment, the heat dissipation holes 152 are honeycomb-shaped, and the diameter of the heat dissipation holes 152 ranges from 10um to 200um. The honeycomb structure is a typical porous material with higher porosity, higher specific stiffness, specific strength, specific energy absorption, and excellent fracture toughness, impact resistance, heat dissipation, and strength of the perforated substrate 111 can be avoided.
In this embodiment, the heat dissipation holes 152 are circular holes, which are convenient to process. Of course, in other embodiments of the present application, the heat dissipation holes 152 may also be provided as polygonal holes, for example, hexagons. The louvers 152 may be distributed in a hexagonal close-packed geometry.
Referring to fig. 1 to 7, in the present embodiment, the depth of the heat dissipation hole 152 is smaller than the thickness of the thinned substrate 111, and the depth of the heat dissipation hole 152 is in the range of 20 μm to 250 μm. The depth of the heat dissipation holes 152 may be set according to the heating value, the size of the device 110, and other parameters. Such as 20 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, etc.
In this embodiment, the process of processing the heat dissipation hole 152 on the back surface of the substrate 111 is:
the reticle is fixed to the photolithography machine, and the device 110 is also fixed to the photolithography machine, with the back of the device 110 facing upward and the side to which the stiffener 151 is bonded facing downward. And (3) coating photoresist on the back surface of the substrate 111, acquiring a mark point on the front surface of the device 110 through a CCD camera, aligning the photoetching mask with the device 110, and completing photoetching to obtain a region needing punching. Holes with a depth of 20-250 μm are etched in the substrate 111 by wet etching, dry etching or laser etching.
Referring to fig. 1 to 7, in the present embodiment, the back surface of the substrate 111 has a first region 155 corresponding to an active region of the device 110 and a second region 156 corresponding to a non-active region of the device 110. The first area 155 and the second area 156 are both provided with the heat dissipation holes 152, and the area of the heat dissipation holes 152 of the first area 155 is 40% -70% in the range of the value, and the area of the heat dissipation holes 152 of the second area 156 is 15% -40% in the range of the value.
Since the heat generation of device 110 is typically concentrated in the active region, the heat generation of non-active regions is typically less. In this embodiment, the heat dissipation holes 152 of the first region 155 corresponding to the active region on the back surface of the substrate 111 are relatively close, and the heat dissipation holes 152 of the second region 156 are relatively sparse, so that a certain strength of the substrate 111 can be ensured, and the heat dissipation capability can be improved.
For example, in some embodiments, the first region 155 has a heat sink 152 area ratio of 70% and the second region 156 has a heat sink 152 area ratio of 30%. Of course, in other embodiments of the present application, the duty cycle of the heat dissipation holes 152 of the first region 155 and the second region 156 may be set according to the actual heat dissipation requirement. As long as the tightness of the placement of the heat dissipation holes 152 of the first region 155 with respect to the heat dissipation holes 152 of the second region 156 is satisfied.
In this embodiment, the heat conductive layer 153 is copper. Step S4 comprises the following sub-steps:
S41, depositing a metal seed layer on the back surface of the substrate 111 in a magnetron sputtering mode;
s42, the device 110 is put into electroplating equipment to deposit copper with the thickness of 5-100 mu m.
The reason for selecting copper for the heat conducting layer 153 is that copper has higher heat conducting property, so that heat is better conducted out. Copper deposited here to a thickness of 5 μm-100 μm is the thickness of copper to the back side of the substrate 111, excluding the thickness of copper within the heat dissipation holes 152. The thickness of copper may be determined according to the heat dissipation capacity.
After copper deposition, the back surface is typically machined to be flat due to the heat dissipation holes 152.
Referring to fig. 1 to 7, in the present embodiment, step S5 includes the following sub-steps:
the device 110 subjected to the steps S1 to S4 and the sub-steps thereof is placed in an organic solvent to separate the device 110 from the reinforcing plate 151.
In summary, according to the gallium nitride power electronic device manufacturing method and the gallium nitride power electronic device 100 provided by the embodiments of the present application, the mechanical strength of the device 110 can be improved by bonding the reinforcing plate 151 on the front surface of the manufactured device 110, the front surface of the manufactured device 110 can be protected, and then the substrate 111 on the back surface of the manufactured device 110 is thinned, so that the problems of chipping during thinning, manufacturing the heat dissipation hole 152 and forming the heat conduction layer 153 can be improved due to the support of the reinforcing plate 151. Secondly, the step of thinning the substrate 111 is arranged later, and the preparation step of the device 110 is carried out before the substrate 111 is thinned, so that the process steps of thinning the substrate 111 are reduced, and the problem that the substrate 111 breaks after being thinned is solved. The application also processes the heat dissipation hole 152 on the back of the substrate 111, and sets the heat conduction material on the back of the substrate 111 and in the heat dissipation hole 152 to form the heat conduction layer 153 on the back of the substrate 111, so that the heat conduction layer 153 has a larger heat conduction coefficient relative to the substrate 111, and can well conduct heat away. In addition, the heat dissipation holes 152 can further reduce the thickness of the partial area, thereby further improving the heat conduction effect.
The present invention is not limited to the above embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.
Claims (10)
1. A method for manufacturing a gallium nitride power electronic device, the method comprising:
Bonding a reinforcing plate (151) to the front surface of the finished device (110);
globally thinning a substrate (111) of the device (110) by the back surface of the device (110) so as to thin the substrate (111) to a preset thickness range;
Processing a heat radiation hole (152) on the back surface of the substrate (111);
providing a thermally conductive material in the backside of the substrate (111) and the heat dissipation holes (152) to form a thermally conductive layer (153) on the backside of the substrate (111);
And releasing the bonding of the reinforcing plate (151).
2. The method for manufacturing a gallium nitride power electronic device according to claim 1, wherein the reinforcing plate (151) is made of a transparent material, so that the mark on the front surface of the device (110) can be obtained by a photolithography apparatus through the reinforcing plate (151).
3. A method of manufacturing a gallium nitride power electronic device according to claim 2, wherein the stiffener (151) is a glass or sapphire sheet.
4. A method of manufacturing a gallium nitride power electronic device according to any one of claims 1 to 3, wherein the stiffener (151) is bonded to the front side of the device (110) by means of a bonding paste (154).
5. A method of manufacturing a gallium nitride power electronic device according to any one of claims 1-3, wherein the step of globally thinning the substrate (111) of the device (110) from the back of the device (110) to thin the substrate (111) to a predetermined thickness range comprises:
and globally thinning the back surface of the substrate (111) by adopting grinding equipment so as to thin the thickness of the substrate (111) to 40-300 mu m.
6. A method for manufacturing a gallium nitride power electronic device according to any one of claims 1-3, wherein the heat dissipation holes (152) are honeycomb-shaped, and the diameter of the heat dissipation holes (152) ranges from 10um to 200um.
7. A method of manufacturing a gallium nitride power electronic device according to any of claims 1-3, wherein the back side of the substrate (111) has a first region (155) corresponding to an active region of the device (110) and a second region (156) corresponding to a non-active region of the device (110);
The first area (155) and the second area (156) are both provided with the radiating holes (152), the value range of the area ratio of the radiating holes (152) of the first area (155) is 40% -70%, and the value range of the area ratio of the radiating holes (152) of the second area (156) is 15% -40%.
8. A method of manufacturing a gallium nitride power electronic device according to any one of claims 1-3, wherein the thermally conductive layer (153) is copper;
The step of disposing a heat conductive material in the heat dissipation hole 152 and the back surface of the substrate 111 to form a heat conductive layer 153 on the back surface of the substrate 111 includes:
depositing a metal seed layer on the back surface of the substrate (111) in a magnetron sputtering mode;
the device (110) is then placed in an electroplating apparatus for electroplating deposition of copper 5 μm to 100 μm thick.
9. A method of manufacturing a gallium nitride power electronic device according to any one of claims 1-3, wherein the device (110) comprises:
A substrate (111);
a GaN buffer layer (112) provided on the surface of the substrate (111);
A GaN channel layer (113) provided on the surface of the GaN buffer layer (112) remote from the substrate (111);
An AlGaN barrier layer (114) provided on the surface of the GaN channel layer (113) that is away from the GaN buffer layer (112);
an electrode layer (115) provided on a side of the AlGaN barrier layer (114) away from the substrate (111), the electrode layer (115) being provided with a gate electrode (118), a source electrode (119), and a drain electrode (121);
The surface of the side of the substrate (111) away from the buffer layer is the back surface of the device (110), and the surface of the electrode layer (115) away from the AlGaN barrier layer (114) is the front surface of the device (110).
10. Gallium nitride power electronic device, characterized in that the gallium nitride power electronic device (100) is prepared by a gallium nitride power electronic device preparation method according to any of claims 1-9.
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