CN119626881A

CN119626881A - Semiconductor process equipment

Info

Publication number: CN119626881A
Application number: CN202411689868.7A
Authority: CN
Inventors: 韦鑫锋; 郑建宇; 闫志顺; 江伟; 简师节
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2024-11-22
Filing date: 2024-11-22
Publication date: 2025-03-14

Abstract

The present application discloses a semiconductor process equipment, which relates to the fields of photovoltaics and semiconductors. A semiconductor process equipment, comprising: a carrier boat and a radio frequency isolation device; the carrier boat comprises a plurality of heating plates which serve as radio frequency electrode plates or grounding electrode plates respectively, the heating plate is provided with a heating element, one end of the heating element is led out relative to the heating plate, and the heating element comprises a metal sleeve; the radio frequency isolation device comprises a first isolation component, the first isolation component comprises an isolation ring, the isolation ring is connected to the metal sleeve, and is used to block the radio frequency signal in the heating plate from being transmitted through the metal sleeve. The present application can solve problems such as radio frequency leakage.

Description

Semiconductor processing equipment

Technical Field

The application belongs to the technical field of photovoltaics and semiconductors, and particularly relates to semiconductor process equipment.

Background

Heterojunction WITH INTRINSIC THIN-layer (HJT) solar cells are expected to be the next generation of cell technology due to the advantages of few process steps, high quality of the cell sheets and the like. The main process steps of HJT solar cells include cleaning texturing, amorphous silicon thin film deposition, conductive film deposition and screen printing. Wherein the amorphous silicon film Deposition is made by a PLASMA ENHANCED CHEMICAL Vapor Deposition (PECVD) device, and the common PECVD device is provided with a cluster type structure, a chain type structure and the like. The layout of the chain structure is shown in fig. 1, and the graphite boat 01 loaded with wafers is transferred to the preheating chamber through the feeding device, then enters the process chamber to perform corresponding processes, and after the processes are finished, the process flow is finished after the processes sequentially pass through the buffer chamber and the discharging device.

In the Heterojunction (HJT) equipment production line, because the cost of the PECVD equipment occupies the main part of the production line equipment, in order to reduce the equipment cost, manufacturers in recent years increase the capacity of the equipment by increasing the carrying capacity of the carrier to achieve the purpose of reducing the cost. For example, as shown in fig. 2, the area of the carrier plate is increased by adopting a structure in which a plurality of graphite boats 01 are stacked, wherein the graphite boats 01 are used as electrode plates for carrying the carrier plate, and plasmas are generated between adjacent electrode plates, so that the equipment productivity is greatly increased without increasing the occupied area. Specifically, the graphite boat 01 includes an upper electrode plate 011, a lower electrode plate 012, and an inter-plate connecting bar 013, the upper electrode plate 011 and the lower electrode plate 012 are disposed at an interval, and support and fixation are achieved by the inter-plate connecting bar 013.

The heater of the HJT-PECVD apparatus of the related art has a lead part, so that radio frequency may leak out through the lead part, thereby adversely affecting the process.

Disclosure of Invention

The embodiment of the application aims to provide semiconductor process equipment which can solve the problems of radio frequency leakage and the like.

In order to solve the technical problems, the application is realized as follows:

the embodiment of the application provides semiconductor process equipment, which comprises a bearing boat and a radio frequency isolation device;

The bearing boat comprises a plurality of heating plates which are respectively used as radio frequency electrode plates or grounding electrode plates, wherein the heating plates are provided with heating pieces, one ends of the heating pieces are led out relative to the heating plates, and the heating pieces comprise metal sleeves;

the radio frequency isolation device comprises a first isolation component, wherein the first isolation component comprises an isolation ring, and the isolation ring is connected with the metal sleeve and used for blocking radio frequency signals in the heating plate from being transmitted out through the metal sleeve.

In the embodiment of the application, the isolating ring is connected with the metal sleeve of the heating element, so that the isolating ring can isolate the radio frequency signals transmitted to the metal sleeve by the heating plate, thereby effectively reducing the risk of leakage of the radio frequency signals on the heating plate from the metal sleeve and ensuring normal release of radio frequency power.

Drawings

FIG. 1 is a schematic diagram of a chain PECVD apparatus of the related art;

FIG. 2 is a schematic view of a structure of a multi-layered graphite boat according to the related art;

FIG. 3 is a schematic view of a heater in the related art;

FIG. 4 is a schematic view of a carrier boat according to an embodiment of the present application;

FIG. 5 is a schematic diagram of a cross section of a heating plate disclosed in an embodiment of the application;

FIG. 6 is a schematic view of a longitudinal section of a heating plate disclosed in an embodiment of the application;

FIG. 7 is a schematic view in longitudinal section of another form of heating plate disclosed in an embodiment of the application;

FIG. 8 is a schematic view of a heating plate with expansion holes and limiting holes according to an embodiment of the present application;

FIG. 9 is a schematic diagram of a grounding electrode plate according to an embodiment of the present application;

FIG. 10 is a schematic diagram of a RF electrode plate according to an embodiment of the present application;

FIG. 11 is a schematic diagram of a carrier, a pick-and-place device, and a positioning assembly according to an embodiment of the present application;

FIG. 12 is a schematic view of a pick-and-place member, a carrier plate and a heating plate according to an embodiment of the present application;

FIG. 13 is a schematic view of a support assembly according to an embodiment of the present disclosure;

FIG. 14 is a schematic view of a load boat with insulation assemblies according to an embodiment of the present application;

Fig. 15 is a schematic structural diagram of a rf feed-in and a grounding assembly according to an embodiment of the present disclosure;

FIG. 16 is a schematic circuit diagram of a RF feed-in device and a carrier boat according to an embodiment of the present application;

FIG. 17 is a schematic diagram of a RF power conditioning assembly, a feed-in connection assembly, an RF feed-in room, and a heating plate according to an embodiment of the present application;

Fig. 18 is a schematic circuit diagram of a radio frequency feed-in device according to an embodiment of the present application;

FIG. 19 is a partial schematic view of a feed-in connection assembly according to an embodiment of the present application;

FIG. 20 is a schematic view of a carrier boat, process chamber, RF isolation device and sealing device according to an embodiment of the present application;

FIG. 21 is a schematic diagram of a RF isolation device, a sealing device and a heating element according to an embodiment of the present application;

FIG. 22 is a cross-sectional view of a heating element, a first press block, and a first isolation assembly according to an embodiment of the present application;

FIG. 23 is a schematic partial view of a thermocouple, a third isolation assembly, and a process chamber according to an embodiment of the present application;

FIG. 24 is a partial schematic view of a cable, thermocouple, process chamber and sealing device according to an embodiment of the present application;

FIG. 25 is a schematic view of a lift assembly, a load bearing shaft, and a process chamber according to an embodiment of the present disclosure;

Fig. 26 is a first schematic view of a semiconductor processing apparatus according to an embodiment of the present application;

fig. 27 is a second schematic view of a semiconductor processing apparatus according to an embodiment of the present application.

Reference numerals illustrate:

01-graphite boat, 011-upper electrode plate, 012-lower electrode plate, 013-connecting rod between plates, 02-metal cavity and 03-heater;

1-a carrying boat;

11-supporting components, 111-supporting rods, 112-supporting sleeves, 113-fasteners and 114-supporting feet;

12-heating plate, 12 a-radio frequency electrode plate, 12 b-grounding electrode plate, 121-first plate, 122-second plate, 123-heating piece, 1231-heating wire core wire, 1232-metal sleeve, 1233-insulating layer, 124-expansion hole, 125-limit hole and 126-through hole;

131-shielding plate, 132-shielding strip;

14-positioning assembly;

15-thermocouple;

16-switching wires;

17-a cable;

18-a lifting assembly;

2-a radio frequency feed-in;

the device comprises a 21-radio frequency feed-in piece, a 211-radio frequency feed-in rod and a 212-radio frequency feed-in block;

22-grounding assembly, 221-grounding feed rod, 222-first grounding feed block, 223-second grounding feed block;

23-radio frequency power regulating component, 231-connecting bar, 2311-main connecting section, 2312-branch connecting section, 2313-connecting column, 232-adjustable capacitor and 233-adjustable inductor;

24-feed connection assembly, 241-feed connection member, 242-isolation member, 243-sealing member;

3-radio frequency isolation device;

31-first isolation component, 311-isolation ring, 3111-metal ring, 31111-connection protrusion, 3112-non-metal ring, 31121-connection groove, 312-first protective sleeve;

32-a second isolation component, 321-a second protective sleeve, 322-a third protective sleeve and 323-a fourth protective sleeve;

33-a first briquetting;

34-third isolation component, 341-fifth protective sleeve, 342-sixth protective sleeve, 3421-external unit, 343-second press block, 344-elastic piece and 345-limit piece;

A 35-filter;

4-sealing device, 41-mounting part, 42-third pressing block, 43-top block, 44-isolating sleeve, 45-locking piece, 46-first sealing piece, 47-second sealing piece and 48-third sealing piece;

5-a process chamber;

6-matcher;

7-picking and placing device, 71-picking and placing piece and 711-inclined guide surface.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.

The terms first, second and the like in the description and in the claims, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged, as appropriate, such that embodiments of the present application may be implemented in sequences other than those illustrated or described herein, and that the objects identified by "first," "second," etc. are generally of a type, and are not limited to the number of objects, such as the first object may be one or more. Furthermore, in the description and claims, "and/or" means at least one of the connected objects, and the character "/", generally means that the associated object is an "or" relationship.

The following describes embodiments of the present application in detail through specific embodiments and application scenarios thereof with reference to the accompanying drawings.

In the HJT-PECVD apparatus of the related art, as shown in fig. 3, a heater 03 is used to heat the graphite boat 01 in the metal cavity 02, and the heater 03 needs to be led out of the metal cavity 02 to be connected with a power supply line. Because the radio frequency signal exists on the graphite boat 01, radio frequency power can leak through the heater 03, so that the normal release of the radio frequency power on the graphite boat 01 can not be ensured.

The embodiment of the application discloses semiconductor process equipment, which comprises a bearing boat 1 and a radio frequency isolation device 3, wherein the radio frequency isolation device 3 is used for blocking radio frequency signals so as to prevent radio frequency power leakage.

Referring to fig. 4 to 27, the carrier boat 1 includes a support assembly 11 and a plurality of heating plates 12, as shown in fig. 4 and 13.

The support assembly 11 is a base member that provides support and mounting base for the heating plates 12 and allows two adjacent heating plates 12 to be spaced apart, and the heating plates 12 are core members that carry, heat, and provide radio frequency power to a wafer (e.g., silicon wafer, etc.). In some embodiments, the plurality of heating plates 12 are stacked on the support assembly 11, and an accommodating space is formed between two adjacent heating plates 12, so that the support and mounting stability of the plurality of heating plates 12 can be ensured by the support assembly 11, and the wafer to be processed can be accommodated by the accommodating space.

Alternatively, the wafers may be held by a carrier plate to move the wafers into or out of the carrier boat 1 by the carrier plate. When the wafers are located in the carrier boat 1, the carrier plate carrying the wafers may float on the heating plate 12.

For example, the spacing between two adjacent heating plates 12 in the plurality of heating plates 12 may be equal, however, in some other cases, the spacing between two adjacent heating plates 12 may not be identical, and may be specifically set according to the actual working conditions. In addition, the heating plate 12 may be a rectangular plate, etc., and the number of the heating plates 12 may be at least two, for example, two, three, four, etc., and may be specifically selected according to the actual working conditions.

As shown in fig. 9 and 10, the plurality of heating plates 12 may include at least one rf electrode plate 12a and at least one ground electrode plate 12b, and the rf electrode plates 12a and the ground electrode plates 12b are alternately arranged along the stacking direction, so that it is ensured that one heating plate 12 is the rf electrode plate 12a and one heating plate 12 is the ground electrode plate 12b in any two adjacent heating plates 12, so that the wafer can be processed in the accommodating space between the rf electrode plate 12a and the ground electrode plate 12 b.

In the embodiment of the application, the heating plate 12 can provide a thermal field environment for the wafer in the accommodating space and can provide a radio frequency environment for the process reaction of the wafer, namely, the heating plate 12 serves as a heat source and a radio frequency member, so that the heating of the wafer can be directly realized through the heating plate 12 without additionally arranging a heater around the bearing boat 1, the heating efficiency of the wafer can be improved, the heating time length is shortened, the beats required by the compression process are facilitated, the heating plate 12 can be arranged opposite to the wafer, the heating area of the wafer is increased, the heating uniformity can be improved, and the problem of uneven heating of different areas of the wafer is effectively relieved.

In some embodiments, the heating plate 12 may include a metal plate and a heating member 123, as shown in fig. 5. Wherein, heating piece 123 is embedded in the metal sheet, and heating piece 123 and the insulating setting of metal sheet, so, both can guarantee that the heat that heating piece 123 produced passes through the metal sheet and transmits, can effectively avoid appearing even electric phenomenon between heating piece 123 and the metal sheet again. The metal plate may be an aluminum plate, a copper plate, an alloy plate, or the like, but may be other materials, and is not particularly limited herein.

With continued reference to fig. 5, in some embodiments, the metal plates may include a first plate 121 and a second plate 122 that are stacked. The side of the first plate 121 facing the second plate 122 may have a groove, the heating element 123 is located in the groove, and the opening of the groove may be blocked by the second plate 122, so that the heating element 123 is embedded in the metal plate.

In other embodiments, the side of the second plate 122 facing the first plate 121 may have a groove, the heating element 123 is located in the groove, and the notch of the groove may be plugged by the first plate 121, so as to implement the embedding of the heating element 123 in the metal plate.

Alternatively, the first plate 121 and the second plate 122 may be fixedly connected, such as welded, bonded, riveted, etc., and may be detachably connected, such as screwed, clamped, plugged, etc.

With continued reference to fig. 5, in some embodiments, the heating element 123 may include a heater wire core 1231, a metal sleeve 1232, and an insulating layer 1233. Wherein, insulating layer 1233 parcel is in the outside of heater strip heart yearn 1231, and the outside of insulating layer 1233 is located to metal cover 1232 cover, and insulating layer 1233 is used for insulating heater strip heart yearn 1231 and metal cover 1232. Based on this arrangement, the sheathed heating member 123 can be formed, and in the case where the heater wire core wire 1231 is energized, heat can be generated, and finally, emitted outward through the metal sheath 1232, so that the metal plate is warmed up, and heat is transferred into the accommodating space via the metal plate, thereby realizing heating of the wafer.

The material of the insulating layer 1233 may be magnesium oxide, but may be other materials, and is not particularly limited herein.

Considering that the edge area of the carrier boat 1 is prone to have heat dissipation, in this embodiment of the present application, the distribution density of the heating elements 123 near the edge area of the heating plate 12 may be greater than the distribution density of the heating elements 123 in the middle area of the heating plate 12, that is, the distribution of the heating elements 123 in the edge area of the heating plate 12 is relatively dense, and the distribution in the middle area is relatively sparse, as shown in fig. 6 and 7. Based on the distribution form, more heat can be generated in the edge area of the heating plate 12, so that even if the heat is easily dissipated in the edge area of the heating plate 12, the temperature of the edge area of the heating plate 12 is ensured to be basically equal to or within an error range with the temperature of the middle area, thereby being beneficial to improving the uniformity of the temperature distribution of the heating plate 12 and further improving the uniformity of heating the wafer.

Referring to fig. 13, in some embodiments, the support assembly 11 may include a plurality of support rods 111, a plurality of support sleeves 112, and fasteners 113. Correspondingly, the heating plates 12 may be provided with a plurality of guiding holes, each supporting rod 111 sequentially penetrates through the guiding holes at the corresponding positions of the plurality of heating plates 12, a plurality of supporting sleeves 112 are sleeved on the outer side of each supporting rod 111, each supporting sleeve 112 is supported between two adjacent heating plates 12, and fastening pieces 113 are respectively fastened at two ends of each supporting rod 111 and used for limiting the two outermost heating plates 12 in the plurality of heating plates 12. The outermost two heating plates 12 of the plurality of heating plates 12 are the heating plates 12 positioned on the top layer and the heating plates 12 positioned on the bottom layer, among the plurality of heating plates 12 stacked.

Based on the above arrangement, separation and support of the adjacent two heating plates 12 can be achieved through the support sleeve 112 to ensure the installation stability of the adjacent two heating plates 12 and isolate the adjacent two heating plates 12, and the two ends of the support rod 111 can be respectively limited through the fastener 113 to ensure that the heating plates 12 cannot be separated from the support rod 111, and the installation stability of each layer of heating plates 12 can be ensured by matching with the plurality of support sleeves 112. In addition, the adoption of the plurality of support sleeves 112 realizes a multi-point support mode for the plurality of heating plates 12, so that the consistency of the gaps in the plates can be ensured.

In addition, a gap may be reserved between the fastening member 113 and the top heating plate 12, and/or between the fastening member 113 and the bottom heating plate 12, so as to form a certain expansion allowance, so as to meet the expansion requirement of the bearing boat 1 in the extending direction of the support rod 111.

It should be noted that there may be a difference in temperature control of the heating plates 12 of different layers, and by introducing the support rods 111, and under the action of the support rods 111, it is possible to satisfy that when expansion is not synchronized, adjacent two layers can be expanded in cooperation with each other, thereby homogenizing the thermal expansion of the heating plates 12 in the plate surface direction.

Illustratively, the support rod 111 may be a ceramic rod, the support sleeve 112 may be a ceramic sleeve, and the fastener 113 may be a fastening nut.

Further, the support assembly 11 may further include a support foot 114, and the support foot 114 may be configured to be installed in the process chamber 5 where the carrier boat 1 is located and connected to one side of the carrier boat 1, for supporting the carrier boat 1. Alternatively, the support feet 114 may be formed of an insulating material, such as a ceramic material, or the like, which isolates the heat and RF signals from the heating plate 12.

Alternatively, the supporting legs 114 may be connected to the supporting bars 111, and also to the heating plate 12 at the bottom end.

Referring to fig. 8, in some embodiments, the heating plate 12 has a central region and an edge region surrounding the central region, and further, the plurality of guide holes may include a plurality of stopper holes 125 and a plurality of expansion holes 124, wherein the plurality of expansion holes 124 are located at the edge region, the plurality of stopper holes 125 are located at the central region, and the expansion holes 124 are elongated holes.

For example, when the heating plate 12 is a rectangular plate, expansion holes 124 may be provided at respective edges of the heating plate 12, wherein the expansion holes 124 at edges of the long sides of the rectangle may extend in the direction of the short sides of the rectangle, the expansion holes 124 at edges of the short sides of the rectangle may extend in the direction of the long sides of the rectangle, and the expansion holes 124 at corners of the rectangle may extend in the direction of diagonal lines of the rectangle.

When the heating plate 12 is a circular plate, expansion holes 124 may be provided at edges of the heating plate 12, and each expansion hole 124 may extend in a radial direction of the circular plate.

Based on the above-mentioned setting, under limiting aperture 125, expansion hole 124 and bracing piece 111 combined action for heating plate 12 when thermal expansion, can realize the limiting action to heating plate 12 along the face orientation through the cooperation of the inner wall of limiting aperture 125 and the outer wall of bracing piece 111, in order to guarantee that heating plate 12 does not take place the skew in the central region when thermal expansion, simultaneously, through the relative motion of expansion hole 124 and bracing piece 111 along the face orientation, can provide the surplus for the expansion in the marginal region of heating plate 12, make heating plate 12 can be in the state of free expansion when expanding around the center when expanding.

In addition, through the synergistic effect of the heating plates 12 and the supporting assembly 11, the gap between two adjacent heating plates 12 is ensured not to have deviation caused by abnormal expansion, and the consistency of expansion of the heating plates 12 along the plate surface direction is ensured.

To ensure that the rf signal does not leak abnormally to the inner surface of the process chamber 5, the carrier boat 1 may further include a shielding plate 131, as shown in fig. 14, where the shielding plate 131 is located at a side of the outermost heating plate 12 away from the other heating plates 12, for shielding the rf signal. Alternatively, the shielding plate 131 may be disposed on the outer surface of the heating plate 12 on the top of the carrier boat 1, on the outer surface of the heating plate 12 on the bottom of the carrier boat 1, and on both the outer surface of the heating plate 12 on the top of the carrier boat 1 and the outer surface of the heating plate 12 on the bottom.

Based on the above arrangement, the heating plate 12 may be separated from the inner surface of the process chamber 5 by the shielding plate 131, so that it may function as a shield for the rf signal to prevent the rf signal from leaking to the inner surface of the process chamber 5.

In some more specific embodiments, the layer structure of the carrier boat 1 may be a shielding plate 131, a plurality of heating plates 12, and the shielding plate 131 that are stacked to form a layer stack structure, and the layer stack structure is supported and fixed by the support assembly 11.

The shielding plate 131 may be mounted to the outer surface of the outermost heating plate 12 by screws.

Further, the carrier boat 1 may further include shielding strips 132, wherein the shielding strips 132 surround the sides of the heating plate 12 for shielding radio frequency signals. With this arrangement, the problem of leakage of the rf signal from the edge of the heating plate 12 to the inner surface of the process chamber 5 can be effectively alleviated by the enclosure of the shielding strip 132.

In some specific embodiments, the shielding strips 132 may be disposed at the edge region of the shielding plate 131 to form a concave cavity, and the heating plate 12 is embedded in the concave cavity, so as to isolate the plate surface and the edge of the heating plate 12 at the outermost side of the carrier boat 1, so as to prevent the leakage of the rf signal to the inner surface of the process chamber 5. Alternatively, the shielding strip 132 and the shielding plate 131 may be fixedly connected, and of course, the shielding strip 132 and the shielding plate 131 may be integrally formed.

In some embodiments, the shielding strip 132 may include a plurality of shielding elements that are connected in sequence to form the entire shielding strip 132. Alternatively, the connection between two adjacent shielding units may be achieved in the form of a labyrinth joint. The labyrinth joint mode can be a connection mode of a protrusion and a groove, a connection mode of step fit and the like.

In some embodiments, two heating plates 12 located at the outer sides of the plurality of heating plates 12 may be ground electrode plates 12b, that is, the heating plates 12 located at the top layer and the bottom layer of the carrier boat 1 may be ground electrode plates 12b, and this arrangement manner can effectively avoid the situation that the top layer and the bottom layer of the carrier boat 1 are the rf electrode plates 12a and generate rf circuits with the inner surface of the process chamber 5, so as to alleviate the problem that rf power cannot be normally released to the plates between the heating plates 12.

In addition, the distribution is performed according to the distribution mode of grounding-radio frequency-grounding, so that the multi-layer radio frequency loop is controllable, the grounding electrode plate 12b and the process chamber 5 are separated to form a double-ground-like radio frequency mode, different potentials can be arranged between the grounding electrode plate 12b and the process chamber 5, and further radio frequency signals can be transmitted along the boards of the bearing boat 1 through the adjustment of the radio frequency loop, so that the power distribution is controllable under the multi-layer radio frequency loop.

In addition, the shielding plate 131 can also be used for isolating the rf signal, so that the rf circuit is independent of the process chamber 5, and the controllability of the multi-layer power distribution is improved.

In some more specific embodiments, the carrier boat 1 may include three layers of heating plates 12 coexisting at two substrate spacings, denoted as first and second spacings, respectively. Assuming that the first layer spacing is 15mm and the second layer spacing is 20mm due to processing errors, thermal expansion, or other factors, the impedance of the second layer is higher than that of the first layer due to the variation in the electrode plate layer spacing. When the radio frequency power supply outputs (the radio frequency power supply output mode can be a voltage output mode or a current output mode) of 1000W, the voltage output mode is used for illustration, that is, the voltages among the electrode plates are consistent, at this time, the actual power is distributed to 800W for the first layer and 200W for the second layer due to the impedance difference, at this time, the automatic adjusting circuit of the radio frequency power distribution unit (such as the matcher 6) can automatically perform impedance supplement to increase the impedance in the radio frequency loop corresponding to the first layer, so that the double-layer uniform distribution of 500W can be realized, and the requirement of uniform power can be met. It should be noted that, the specific structure of the matcher 6 and the principle of its distribution of radio frequency power may refer to the prior art, and will not be described in detail herein.

However, in practical situations, since the plasma density is lower under the same power due to the change of the distance, in practical situations, the impedance of the first layer needs to be further increased to realize the first layer power distribution 400W and the second layer power distribution 600W, and the adjustment coefficient of the matcher 6 is increased by means of software or hardware, wherein the adjustment coefficient can be obtained through power conversion, that is, 600/400=1.5, and thus the adjustment can be realized. It should be noted that the adjustment coefficient may be optimized according to other radio frequency parameters (such as plasma density, etc.), or the process film thickness data may be added to form a complete coefficient calculation method. The adjustment range of the matcher 6 can be increased by changing the connection mode of the local capacitor, the inductor or the circuit, and the adjustment coefficient of the matcher 6 can be dynamically adjusted according to various detection data such as real-time network current, voltage and plasma density detection, so as to increase the adjustment range of the matcher 6.

Referring to fig. 11, in some embodiments, the carrier boat 1 may further include a positioning assembly 14, where the positioning assembly 14 is located at an edge area of the heating plate 12, and is used to position the carrier plate carried by the heating plate 12, so as to ensure the positional accuracy of the wafer on the carrier plate.

Alternatively, the positioning assembly 14 may include positioning blocks respectively located at both sides of the accommodating space, and the two side edges of the wafer may be positioned by the positioning blocks at both sides.

Wherein the carrier plate is used for holding wafers, and floats on the heating plate 12.

In an embodiment of the present application, the semiconductor processing apparatus may include a process chamber 5, the carrier boat 1 and the rf feed-in device 2. The carrying boat 1 is disposed in the process chamber 5, an input end of the rf feed-in device 2 is configured to receive an rf signal corresponding to the rf power, and an output end of the rf feed-in device 2 is configured to output the rf signal to the carrying boat 1.

As shown in fig. 15, the rf feed-in device 2 includes an rf power distribution member (not shown), a plurality of rf feed-in members 21, and a grounding member 22. The rf power distribution member is configured to distribute rf power to a plurality of rf feed members 21, each rf feed member 21 may have an rf input end and an rf output end, the rf input end is configured to receive an rf signal, the rf output end is configured to be connected to at least one rf electrode plate 12a, and the ground assembly 22 is configured to be connected to the ground electrode plate 12 b.

Based on this arrangement, radio frequency signals can be respectively input to the radio frequency input ends of the plurality of radio frequency feed-in pieces 21 through the radio frequency power distribution pieces, and the radio frequency power distributed by the radio frequency power distribution pieces is fed into the radio frequency electrode plates 12a of different layers of the carrying boat 1 respectively, and the grounding electrode plates 12b of different layers of the carrying boat 1 are grounded through the grounding component 22.

Compared with the mode of feeding radio frequency power between a plurality of polar plates by adopting the same feeding structure in the related art, the embodiment of the application adopts the radio frequency power distribution piece to realize the distribution of the radio frequency power, and the radio frequency electrode plates 12a of different layers can be respectively fed with the distributed radio frequency power through the plurality of radio frequency feeding pieces 21, so that the radio frequency power fed into the radio frequency electrode plates 12a of different layers can be conveniently regulated and controlled through the plurality of different radio frequency feeding pieces 21 under the action of the radio frequency power distribution piece, and the interlayer radio frequency regulation is realized. Alternatively, the rf power distribution member may adjust the rf power input to the rf electrode plates 12a of different layers accordingly according to different operating conditions.

It should be noted that, the rf output end of each rf feed 21 may be connected to a set of rf electrode plates 12a, where one set may include one or more rf electrode plates 12a, so that when one set includes one rf electrode plate 12a, rf power may be fed to the rf electrode plate 12a through the rf feed 21, and when one set includes a plurality of rf electrode plates 12a, for example, two or the like, and two adjacent rf electrode plates 12a are separated by a grounding electrode plate 12b, in this case, the rf output end of each rf feed 21 may be connected to the plurality of rf electrode plates 12a respectively, so as to feed rf power to the plurality of rf electrode plates 12a simultaneously.

In some embodiments, each rf electrode plate 12a may have at least one rf feed 21 connected thereto, and rf power may be fed to each rf electrode plate 12a by the at least one rf feed 21.

In some more specific embodiments, each rf electrode plate 12a may be connected with two rf feed-in pieces 21, and the two rf feed-in pieces 21 are symmetrically disposed in the length direction of the rf electrode plate 12a, that is, the two rf feed-in pieces 21 form a double-point symmetrical arrangement on each rf electrode plate 12a, so that double-point feed-in can be implemented, so as to improve uniformity of rf power distribution on each rf electrode plate 12 a.

Optionally, a through hole 126 may be provided in a middle area of the rf electrode plate 12a, and the rf feed 21 is connected to a hole wall of the through hole 126, so that a first channel may be formed by the through holes 126 of the multiple layers of rf electrode plates 12a together, and the rf feed 21 is located in the first channel, so as to avoid assembly interference between the rf feed 21 and the rf electrode plate 12a, and further, feeding rf power to each rf electrode plate 12a may be implemented.

Likewise, the middle region of the ground electrode plate 12b may be provided with a through hole 126, and the ground assembly 22 is connected to the wall of the through hole 126, so that a second channel may be formed by the through holes 126 of the multiple layers of ground electrode plates 12b together, and the ground assembly 22 is located in the second channel, so as to avoid assembly interference between the ground assembly 22 and the ground electrode plate 12b, and further, the ground arrangement of each ground electrode plate 12b may be achieved.

Alternatively, the rf feed 21 may be fastened to the rf electrode plate 12a by screws to introduce rf power to the surface of the rf electrode plate 12a through the rf feed 21 and provide rf power required for the reaction to the wafer by controlling the potential states of the different rf electrode plates 12 a. Likewise, the grounding assembly 22 may be fastened to the grounding electrode plate 12b by screws to ensure the reliability of grounding.

In some embodiments, the radio frequency power distribution unit may be the matcher 6 with a power distribution function or a circuit with a power distribution function, but may be any other component with a power distribution function, which is not limited herein.

With continued reference to fig. 15, in some embodiments, each rf feed 21 may include an rf feed rod 211 and an rf feed block 212. The rf feed rod 211 includes an rf input end, and an end of the rf feed rod 211 is an rf input end. In addition, the rf feed block 212 may include an rf output.

The rf feed block 212 is connected to the rf feed rod 211, and the rf feed block 212 is configured to be connected to at least one rf electrode plate 12 a.

Based on the above arrangement, the rf signal may be received by the rf feed rod 211 and transmitted to the rf feed block 212, and finally transmitted to the at least one rf electrode plate 12a by the rf feed block 212, so as to form an rf environment between the rf electrode plate 12a and the ground electrode plate 12 b.

Optionally, the rf feed block 212 may include an rf output end, which is connected to the rf electrode plates 12a in a one-to-one correspondence, so as to feed rf power to the corresponding rf electrode plates 12a through the rf feed block 212, and of course, the rf feed block 212 may also include a plurality of rf output ends, so as to feed rf power to the plurality of rf electrode plates 12a through the plurality of rf output ends, respectively.

In some more specific embodiments, the rf feed 21 may be connected to opposite ends of the through hole 126 of the rf electrode plate 12a, so as to feed rf power to the rf electrode plate 12a from two sides, which is beneficial to improving the uniformity of rf power feeding in the rf electrode plate 12 a.

Accordingly, opposite ends of the through hole 126 of the ground electrode plate 12b may be connected to the ground members 22, respectively, to improve the uniformity of the ground through the ground members 22.

In some embodiments, the spacing of the layers of the plurality of heating plates 12 in the load boat 1 is not exactly the same. Specifically, the plurality of layer spacings between the rf electrode plate 12a and the ground electrode plate 12b are not exactly the same. Wherein the plurality of layer spacings may include a first layer spacing and a second layer spacing, and the first layer spacing is greater than the second layer spacing.

It should be noted that, in consideration of the uniformity of the layer spacing between the different heating plates 12 due to the assembly or the process use, that is, when the layer spacing between the heating plates 12 of different layers is different, the difference of the rf environments such as the plasma density between the different layers, that is, the difference of the plasma density between the different layers under the condition of the same rf power, may cause the difference of the process effects between the different layers.

Based on the above, in the embodiment of the present application, the rf power distribution unit may be at least configured to distribute rf power to the corresponding rf electrode plate 12a according to the first layer spacing and the second layer spacing. That is, under the action of the rf power distribution member (e.g., the matcher 6, etc.), the compensation adjustment is performed through the layered adjustment network, that is, the rf power fed into the corresponding rf electrode plate 12a is adaptively adjusted through the rf power distribution member according to the difference between layers, so that the rf powers between different layers are substantially consistent, so that the process effects between different layers are consistent. Of course, the rf power distribution unit may also distribute rf power, such as plasma density, to the corresponding rf electrode plate 12a according to other rf parameters.

Specifically, the rf power introduced into the rf feed-in member 21 connected to the rf electrode plate 12a corresponding to the first layer spacing is greater than the rf power introduced into the rf feed-in member 21 connected to the rf electrode plate 12a corresponding to the second layer spacing. Based on the method, the plasma density at the first layer interval and the second layer interval can be correspondingly adjusted, so that the consistency difference between different layers can be eliminated, and the process effect between different layers can be consistent.

For example, in the case where the interlayer spacing is large, the density of the plasma is small, in which case the rf power of the rf electrode plate 12a corresponding to the interlayer spacing can be appropriately increased to increase the plasma density, and in the case where the interlayer spacing is small, the density of the plasma is large, in which case the rf power of the rf electrode plate 12a corresponding to the interlayer spacing can be appropriately decreased to decrease the plasma density.

In addition, since the top heating plate 12 and the bottom heating plate 12 of the carrying boat 1 are closer to the inner wall of the process chamber 5 (i.e. there is a chamber gap capacitance), when the rf power increases, the top heating plate 12 and the bottom heating plate 12 will react with the inner wall of the process chamber 5, so that there is a phenomenon that part of the rf power is consumed in the non-reaction area (for example, when the interlayer power is set to be 5KW, the gap power between the top and bottom is 4.5 KW), so that the rf power fed in on the rf electrode plates 12a between different layers can be controlled independently, thereby ensuring the consistency of the rf power between different layers. Specifically, the rf power on the rf electrode plate 12a corresponding to each of the top layer and the bottom layer may be increased separately, that is, the rf power at the two positions is distributed to 5.5KW, and after loss, the rf power is consistent with the power of the other layer.

Referring to fig. 17, 26 and 27, in some embodiments, the rf feed-in device 2 may further include a plurality of rf power adjustment assemblies 23, where the plurality of rf power adjustment assemblies 23 are respectively disposed between the rf power distribution assemblies and the corresponding rf feed-in members 21. Based on this arrangement, the regulated rf power can be transmitted to the respective rf feeds 21 by a plurality of rf power conditioning assemblies 23, respectively.

It should be noted that, when one group connected to the rf feed 21 includes one rf electrode plate 12a, the rf power in the rf electrode plate 12a may be adjusted by the rf power adjusting component 23, and when one group connected to the rf feed 21 includes a plurality of rf electrode plates 12a, the rf power in the plurality of rf electrode plates 12a in the group may be simultaneously adjusted by the rf power adjusting component 23.

In some more specific embodiments, the input ends of the plurality of rf power adjustment assemblies 23 are respectively connected to the matcher 6, and the output ends of the plurality of rf power adjustment assemblies 23 are respectively connected to the corresponding rf feed-in members 21. Based on this arrangement, the rf power distributed via the matcher 6 may be transmitted to the corresponding rf feed 21 through the plurality of rf power adjustment assemblies 23, respectively, and the distributed rf power may be fed to the corresponding rf electrode plate 12a through the rf feed 21.

In an embodiment of the present application, as shown in fig. 17, each rf power adjustment assembly 23 may include a connection bar 231, an adjustable capacitor 232, and an adjustable inductor 233. The input end of the connection bar 231 may be connected to the rf power distribution member, and is configured to receive the rf power distributed by the rf power distribution member, the output end of the connection bar 231 is correspondingly connected to the rf feed-in member 21, and the adjustable capacitor 232 and the adjustable inductor 233 are respectively connected to the connection bar 231. Based on this, the rf power distributed by the rf power distribution part can be transmitted to the corresponding rf feed-in part 21 through the connection bar 231, and the rf field transmitted into the rf electrode plate 12a by the rf feed-in part 21 can be adjusted by introducing the adjustable capacitor 232 and the adjustable inductor 233 into the connection bar 231.

In some embodiments, the connection bar 231 may include a main connection section 2311 and a plurality of branch connection sections 2312, wherein the main connection section 2311 is used to connect with the rf power distribution member through connection posts 2313, and each branch connection section 2312 is correspondingly connected with the rf feed-in member 21, such that rf power may be fed to the main connection section 2311 through the connection posts 2313 and distributed to the plurality of branch connection sections 2312 by the main connection section 2311, and the rf signal is transmitted to the corresponding rf feed-in member 21 through the plurality of branch connection sections 2312, and finally fed to the corresponding rf electrode plate 12a through the rf feed-in member 21, respectively.

Further, each radio frequency power adjustment assembly 23 may include a plurality of adjustable capacitors 232 and a plurality of adjustable inductors 233. The tunable capacitors 232 are respectively connected to the branch connection segments 2312, and the tunable inductors 233 are respectively connected between the branch connection segments 2312 and the main connection segment 2311.

Based on the above arrangement, the adjustable capacitor 232 and the adjustable inductor 233 can be respectively introduced into each branch connection segment 2312, and the rf field transmitted from each rf feed-in element 21 to the corresponding rf electrode plate 12a can be respectively adjusted, so that the rf power fed in different areas on at least one rf electrode plate 12a in each group can be adjusted, which is beneficial to improving the uniformity of the rf power in the rf electrode plate 12 a.

In some more specific embodiments, each rf electrode plate 12a may be connected to two symmetrically disposed rf feed-in members 21, and the connection bar 231 may include two branch connection sections 2312, where the two branch connection sections 2312 are respectively connected to the two rf feed-in members 21, and an adjustable capacitor 232 and an adjustable inductor 233 are disposed in each branch connection section 2312. Based on the arrangement, the adjustment of the radio frequency power transmitted to the two radio frequency feed-in pieces 21 can be realized through the respective adjustment of the adjustable capacitor 232 and the adjustable inductor 233 in each branch connection section 2312, so that the adjustment of the radio frequency power at two points on the radio frequency electrode plate 12a can be realized, and the uniformity of the radio frequency power in the radio frequency electrode plate 12a is improved.

It should be noted that, because of the gas field (i.e. the gas field flow rate and the pressure are locally uneven, the flow rate and the pressure are low, which can cause the local plasma density to be low) or the temperature field (i.e. the process chamber 5 has an open end, when the wafer is opened and taken and placed, the temperature difference exists, the reaction speed is slow in the area with low temperature), the difference in the process effect in the electrode plate can be caused, the local pressure is low, the flow rate is fast, the temperature is low, and the like, which can cause the process speed to be slow, so that the rf compensation effect can be performed by adjusting the two points, that is, the local rf power in the rf electrode plate 12a is increased, so that the process environment inconsistency caused by other abnormal working conditions of the density is increased, and the process consistency in the plate can be adjusted.

Referring to fig. 11, the electrode inductance in the rf circuit is the impedance of the rf electrode plate 12a, and the rf feed-in element 21, the feed-in connection assembly 24 and the rf power adjustment assembly 23 together form a connection bar 231 inductance in the rf circuit.

Referring to fig. 26 and 27, in some embodiments, the rf feedthrough 2 may further include a plurality of feedthrough assemblies 24, each feedthrough assembly 24 is connected between the rf power adjusting assembly 23 and the rf feedthrough 21, so that the rf power output by the rf power adjusting assembly 23 can be transmitted to the rf feedthrough 21 through the feedthrough assembly 24 and finally to the corresponding rf electrode plate 12a through the rf feedthrough 21.

Optionally, a plug connection manner may be adopted between the feed connection assembly 24 and the rf feed rod 211 of the rf power adjustment assembly 23, so as to facilitate assembly and disassembly.

Referring to fig. 15, in some embodiments, the ground assembly 22 may include a ground feed bar 221, a first ground feed block 222, and a plurality of second ground feed blocks 223. The ground feed rod 221 is used for grounding, the first ground feed block 222 may extend along the stacking direction of the carrier boat 1, the first ground feed block 222 is connected with the ground feed rod 221, the plurality of second ground feed blocks 223 may be disposed at intervals along the stacking direction, the plurality of second ground feed blocks 223 are respectively connected to the first ground feed block 222, and the plurality of second ground feed blocks 223 are respectively connected to the plurality of ground electrode plates 12 b.

Based on the above arrangement, each of the ground electrode plates 12b may be connected to the first ground feed block 222 through the corresponding second ground feed block 223 and grounded through the ground feed rod 221, so that the ground arrangement of each of the ground electrode plates 12b may be achieved.

Referring to fig. 8, the rf feed-in rod 211 and the rf feed-in block 212 together form a connection bar 231 in the rf circuit, and the electrode inductance in the rf circuit is the impedance of the rf electrode plate 12a itself. The first grounding feed-in block 222, the second grounding feed-in block 223 and the grounding feed-in rod 221 together form a connecting strip 231 inductive reactance in the grounding circuit, wherein the electrode inductive reactance in the grounding circuit is the impedance of the grounding electrode plate 12b, and the chamber gap capacitance is the gap capacitance formed by the grounding electrode plate 12b and the inner wall of the process chamber 5.

Referring to fig. 19, in some embodiments, feed connection assembly 24 may include feed connection component 241, isolation component 242, and sealing component 243. The feed-in connecting part 241 is arranged on the cavity wall of the process chamber 5, the input end of the feed-in connecting part 241 is used for being connected with the radio frequency power distribution part, the output end of the feed-in connecting part 241 extends into the process chamber 5 and is connected with the corresponding radio frequency feed-in part 21, the sealing part 243 is arranged on the outer side of the cavity wall and sleeved on the periphery of the feed-in connecting part 241 and is used for sealing a gap between the feed-in connecting part 241 and the cavity wall, the isolating part 242 is arranged outside the process chamber 5 and sleeved on the periphery of the feed-in connecting part 241, and the isolating part 242 is abutted with the sealing part 243.

Alternatively, the feed connection part 241 may include an electrode adaptor, which may be fixedly connected to the rf power adjustment assembly 23 by a screw, and in particular, the electrode adaptor may be fixedly connected to the connection bar 231.

The feed connection component 241 may further include a feed electrode rod, an electrode feed head, and an elastic plug ring, where one end of the feed electrode rod is connected with the electrode adapter, the other end of the feed electrode rod is connected with the electrode feed head, the elastic plug ring is elastically connected to the electrode feed head and the rf feed member 21, and by using the elastic plug ring, the pretightening force between the electrode feed head and the rf feed member 21 can be increased, so as to increase the tightness of the plug, and be beneficial to increasing the conductivity.

Optionally, the electrode feed-in rod can be made of materials with small thermal expansion, good structural rigidity and good electric conductivity, so as to ensure the mechanical and electric properties of the structure at high temperature. Illustratively, the electrode feed rod may be 304 stainless steel.

Considering that the electrode feed-in head is positioned at the edge of the reaction area in the process chamber 5, in order to alleviate corrosion of the electrode feed-in head, the electrode feed-in head may be made of a corrosion-resistant material, for example, a 6061 aluminum alloy material may be used for the electrode feed-in head.

Based on the above arrangement, external rf power can be introduced into the rf electrode plate 12a through the rf power adjustment assembly 23, the electrode adapter, the feeding electrode rod, the electrode feeding head, the elastic plug ring, and the rf feeding member 21 in this order.

In addition, the isolation and sealing between the feeding parts can be achieved through the isolation part 242 and the sealing part 243 so as to ensure the signal isolation and sealing effect.

It is contemplated that during operation of the semiconductor processing apparatus, there will be an rf signal on the heater plate 12 (which may be either the rf electrode plate 12a or the ground electrode plate 12 b). However, rf signals may be transmitted along the metal sleeve 1232, with the risk of rf power leakage into the process chamber 5. Based on this, the semiconductor process equipment in the embodiment of the present application may further include a rf isolation device 3, and the rf isolation device 3 is used to block the rf signal, so as to prevent the rf power from leaking from the metal sleeve 1232 to the sidewall of the process chamber 5.

As shown in fig. 21, the radio frequency isolation device 3 may include a first isolation component 31, where the first isolation component 31 blocks the radio frequency signal from being led out of the metal sleeve 1232 to cause leakage. The first isolation component 31 may include an isolation ring 311, where the isolation ring 311 is adapted to the shape of the metal sleeve 1232, and the isolation ring 311 is connected to the metal sleeve 1232 for blocking the radio frequency signal in the heating plate 12 from being transmitted out through the metal sleeve 1232, so as to effectively play a role of radio frequency isolation to prevent radio frequency power leakage.

The spacer ring 311 may be a ceramic ring, or of course, may be made of other materials, and is not specifically limited herein, and in addition, the spacer ring 311 may be fixedly connected with the metal sleeve 1232, such as welding, bonding, etc., so as to ensure the tightness of the connection.

In the embodiment of the application, after the isolation ring 311 is connected with the metal sleeve 1232, the heating wire core wire 1231 can be led to the isolation ring 311, and the insulation layer 1233 is filled inside, that is, the transmission path of the metal sleeve 1232 for the radio frequency signal is disconnected through the isolation ring 311, so that the leakage of the radio frequency power can be avoided. It should be noted that, since the heating member 123 is integrally formed by a drawing process, the spacer ring 311 may be separately manufactured from the heating member 123, and the spacer ring 311 may be connected to the metal jacket 1232 by a subsequent connection (e.g., welding, etc.).

In the embodiment of the application, the isolation ring 311 is connected to the metal sleeve 1232 of the heating element 123, so that the isolation ring 311 can block the radio frequency signal transmitted to the metal sleeve 1232 by the heating plate 12, thereby effectively reducing the risk of leakage of radio frequency power on the heating plate 12 from the metal sleeve 1232 and ensuring normal release of the radio frequency power.

In some embodiments, the isolation ring 311 may be disposed at one end of the heating element 123 and connected to the end surface of the metal sleeve 1232, so that the rf signal is effectively blocked from being transmitted from the end surface of the metal sleeve 1232, and rf power is prevented from leaking.

In other embodiments, the isolation ring 311 may be disposed between one end of the heating element 123 and the edge of the heating plate 12, and axially separates the metal sleeve 1232 into two parts, so that the transmission of the rf signal from one part of the metal sleeve 1232 to the other part can be effectively blocked, thereby effectively preventing the rf power from being transmitted, and thus preventing the rf power from leaking.

In the embodiment of the application, through the connection between the isolation ring 311 and the metal sleeve 1232, the cable has flexibility (the flexibility can resist cable bending caused by thermal expansion) and the effect of non-metal blocking radio frequency signals.

With continued reference to fig. 21, in some embodiments, the spacer ring 311 may include a metallic ring 3111 and a non-metallic ring 3112. Wherein the metal ring 3111 is connected to the metal sleeve 1232, and the metal ring 3111 is connected to the non-metal ring 3112 at least one axial end. Alternatively, a metal ring 3111 may be connected to one end of the non-metal ring 3112 and the metal ring 3111 is connected to the metal jacket 1232, and a metal ring 3111 may be connected to both shaft ends of the non-metal ring 3112 and the metal ring 3111 at one shaft end is connected to the metal jacket 1232, respectively.

Based on the above arrangement, blocking of the rf signal can be achieved by the non-metallic ring 3112 to prevent rf power leakage.

Further, the shaft end of one of the non-metal ring 3112 and the metal ring 3111 may be provided with a coupling groove 31121, and the shaft end of the other may be provided with a coupling protrusion 31111, the coupling protrusion 31111 being coupled to the coupling groove 31121. With this arrangement, the reliability of the connection between the metal ring 3111 and the non-metal ring 3112 can be ensured.

In addition, welding may be performed at the connection of the connection protrusion 31111 and the connection groove 31121 to further improve connection reliability.

In some more specific embodiments, the non-metal ring 3112 is provided with coupling protrusions 31111 at both shaft ends, and the two metal rings 3111 are provided with coupling grooves 31121, respectively, so that the two metal rings 3111 can be fitted to the non-metal ring 3112 at both shaft ends, respectively.

Considering that the carrier boat 1 is disposed in the process chamber 5 and the heating member 123 is led out from the heating plate 12 and extends in the process chamber 5, plasma in the process chamber 5 may intrude into the heating member 123 during the process. In this case, the first isolation assembly 31 may further include a first shield 312, and the first shield 312 connects the isolation ring 311 and the carrier boat 1 and is sleeved on the outer side of the metal sleeve 1232 for blocking plasma. Alternatively, when the spacer ring 311 is positioned at the end of the metal sleeve 1232, the first protection sleeve 312 may be sleeved outside the metal sleeve 1232, and one end of the first protection sleeve 312 is connected to the spacer ring 311, and when the spacer ring 311 is positioned at the middle of the metal sleeve 1232, the first protection sleeve 312 may be sleeved outside the metal sleeve 1232, and at the same time, the first protection sleeve 312 is sleeved outside the spacer ring 311.

Based on the above arrangement, by the arrangement of the first protective sheath 312, it is possible to effectively prevent plasma from invading the heating member 123 and reduce the safety risk of low vacuum ignition of the charged ends of the positive and negative electrodes.

Alternatively, the first protective sleeve 312 may be made of ceramic, although other materials with plasma isolation may be used, which is not particularly limited herein.

It is considered that the transfer wire 16 connected to the heating wire core 1231 of the heating member 123 is located in the process chamber 5, thereby causing plasma in the process chamber 5 to be further intruded into the transfer wire 16. Based on this, the isolation device may further include a second isolation component 32, and the second isolation component 32 protects the patch cord 16.

Specifically, the second isolation component 32 is configured to be disposed outside the transfer wire 16 to block the plasma from invading the transfer wire 16. In addition, one end of the second isolation component 32 is connected to the first isolation component 31, so as to protect the junction between the transfer wire 16 and the heating wire core wire 1231.

With continued reference to fig. 21, the second isolation assembly 32 may further include a first pressing block 33, and the first pressing block 33 is abutted with the other end of the second isolation assembly 32 and connected to the heating plate 12 through a locking member 45, so that the second isolation assembly 32 may be pressed by the first pressing block 33 and the first isolation assembly 31 may be pressed by the second isolation assembly 32 under the locking action of the locking member 45, thereby ensuring that the first isolation assembly 31 and the second isolation assembly 32 are reliably mounted to the heating plate 12.

The second isolation component 32 includes a second protecting sleeve 321, a fourth protecting sleeve 323, and a third protecting sleeve 322 that are sequentially disposed. The second protective sleeve 321 is sleeved outside the junction of the transfer wire 16 and the heating wire core wire 1231 to protect the junction of the transfer wire 16 and the heating wire core wire 1231 from plasma invasion, the third protective sleeve 322 is sleeved outside the junction of the transfer wire 16 and the cable 17 to protect the junction of the transfer wire 16 and the cable 17 from plasma invasion, and the fourth protective sleeve 323 is sleeved outside the region between the two ends of the transfer wire 16 to protect the region between the two ends of the transfer wire 16 from plasma invasion.

Optionally, the second protective cover 321, the fourth protective cover 323 and the third protective cover 322 may be sequentially and fixedly connected, such as welded, adhered, or detachably connected, and of course, the second protective cover 321, the fourth protective cover 323 and the third protective cover 322 may be integrally formed.

In some embodiments, the leading-out ends of the heater wire core wires 1231 of each heater plate 12 are led out along the plate surface direction of the heater plate 12, so that the total lengths of the heater wire core wires 1231, the transfer wires 16, and the cables 17 corresponding to the plurality of heater plates 12 are equal. With this arrangement, the extending directions of the heater wire core wires 1231, the transfer wires 16, and the cables 17 corresponding to each heating plate 12 can be made parallel to the heating plates 12, so that there is no influence on the flow resistance of the air field between the heating plates 12, and, since the total lengths are equal, the phenomenon of radio frequency intertwined firing due to abnormal bending caused by the unequal total lengths of the heater wire core wires 1231, the transfer wires 16, and the cables 17 corresponding to the heating plates 12 of different layers can be effectively avoided.

In some specific embodiments, the heater wire core 1231 may be led out from the tail end of the heating plate 12, which does not affect the flow resistance of the air field between the heating plates 12, and which is also matched with the vacuum port of the process chamber 5, so that the heater wire core 1231, the transfer wire 16 and the cable 17 do not block the air flow during the vacuum process. Alternatively, the heater wire core 1231 may be led out towards a certain side wall of the process chamber 5, and accordingly, a vacuum suction port may be provided on this side wall to achieve a co-located placement.

In order to adapt to the arrangement form of the heating wire core wire 1231, the transfer lead 16 and the cable 17, in the embodiment of the application, the first isolation component 31 and the second isolation component 32 can extend along the plate surface direction of the corresponding heating plate 12 and are sleeved outside the corresponding metal sleeve 1232 and the transfer lead 16, so that the problem of gas field flow resistance of the first isolation component 31 and the second isolation component 32 to the gas in the process chamber 5 can be effectively relieved.

Referring to fig. 23, in some embodiments, the carrier boat 1 may further include a thermocouple 15, and a detection end of the thermocouple 15 is disposed on the heating plate 12 for detecting a temperature of the heating plate 12. In addition, the thermocouple 15 is led out relative to the heating plate 12, and the end of the thermocouple 15 facing away from the heating plate 12 extends outside the process chamber 5 for signal connection with the signal receiving device, so that the temperature of the heating plate 12 is read. Alternatively, the thermocouple 15 may be led out of the process chamber 5 via a cable 17 for connection with a signal receiving device.

Alternatively, thermocouple 15 may include a thermocouple core wire, an outer sleeve, and thermocouple insulation material between the core wire and the outer sleeve of position Yu Reou, wherein the outer sleeve may be an armored metal tube or the like.

In view of the fact that the temperature inside the process chamber 5 is relatively high, and the thermocouple 15 is disposed at the edge of the plasma reaction area, in order to avoid the interference of the signal of the thermocouple 15 by the plasma and even the damage of the thermocouple 15, the isolation device in the embodiment of the application may further include a third isolation component 34, as shown in fig. 23, where the third isolation component 34 is disposed at the outer side of the thermocouple 15 to isolate the plasma at the outer side of the thermocouple 15, thereby effectively preventing the plasma from invading the thermocouple 15 to affect the signal of the thermocouple 15 or damage to the thermocouple 15, and meanwhile, the third isolation component 34 may also isolate the thermocouple 15 from the heating plate 12 to effectively prevent the radio frequency signal on the heating plate 12 from being transmitted to the thermocouple 15 and leaking to the process chamber 5 through the thermocouple 15.

In some embodiments, the third isolation assembly 34 includes a fifth protective sheath 341, a sixth protective sheath 342, and a second press 343. The fifth protecting sleeve 341 is sleeved on the outer periphery and the end of the thermocouple 15, which is arranged at one end of the heating plate 12, and is used for isolating the end of the thermocouple 15, which is arranged at the heating plate 12, from the heating plate 12 at the outer periphery and the end, so as to play a role in blocking radio frequency signals. Alternatively, the fifth protective cover 341 may be made of a ceramic material, such as an aluminum nitride material, etc., which has good heat conductive properties.

The second briquetting 343 is connected to the heating plate 12 through the retaining member 45, and the fifth guard member is arranged between the second briquetting 343 and the heating plate 12, so that under the locking action of the retaining member 45, the fifth guard sleeve 341 can be mounted to the heating plate 12 through the second briquetting 343, and the mounting reliability is ensured.

The sixth protecting sleeve 342 is sleeved on the outer side of the thermocouple 15 and is in butt joint with the second pressing block 343, so that the outer side of the thermocouple 15 can be protected through the sixth protecting sleeve 342 to prevent plasma in the process chamber 5 from invading the thermocouple 15, and the sixth protecting sleeve 342 can be installed through the second pressing block 343.

In some embodiments, the fifth guard 341 is slidably coupled to the second press 343 in the extending direction of the thermocouple 15 such that the fifth guard 341 is movable relative to the second press 343. Further, the third isolation component 34 may further include an elastic member 344 and a limiting member 345, where the limiting member 345 is connected to the thermocouple 15 or the fifth protecting sleeve 341, and the elastic member 344 is elastically connected to the limiting member 345 and the second pressing block 343, so that a pre-tightening force can be generated under the elastic force of the elastic member 344, and the pre-tightening force is transferred to the thermocouple 15 or the fifth protecting sleeve 341 through the limiting member 345, so that the connection stability between the thermocouple 15 and the heating plate 12 can be ensured.

Optionally, the limiting member 345 may be fixedly connected to the thermocouple 15, so that the thermocouple 15 and the fifth protecting sleeve 341 can be tightly contacted with the heating plate 12 under the elastic force of the elastic member 344, so as to ensure the reliability and stability of connection.

Considering that the carrier boat 1 may have a thermal expansion effect, the thermocouple 15 is dragged due to the thermal expansion. Based on this, the sixth protection sleeve 342 may include a plurality of sleeve units 3421 disposed in sequence, and two adjacent sleeve units 3421 may be slidably connected along the extension direction of the thermocouple 15, so that a multistage serial structure may be formed. Based on this arrangement, it is ensured that when thermal expansion of the carrier boat 1 occurs, the adjacent two sleeve units 3421 can slide relatively to make the sixth isolation have a certain flexible effect, and the effect of isolating the plasma can also be maintained, so as to prevent the plasma from invading the thermocouple 15 to affect the temperature detection accuracy. Illustratively, the connection between two adjacent sleeve units 3421 may be of a labyrinth design to ensure flexibility while also ensuring insulation while sliding relative to each other.

In other embodiments, one end of the sixth protective sleeve 342 may be slidably connected to the second pressing block 343 along the extending direction of the thermocouple 15. Based on this, when the thermal expansion of the carrier boat 1 occurs, the sixth protective sleeve 342 and the second pressing block 343 can also slide relatively to form a flexible effect, so as to adapt to the thermal expansion effect.

Referring to fig. 26, in some embodiments, the semiconductor processing apparatus may further include a filter 35, the filter 35 being connected to the heating member 123 and the thermocouple 15 through the cable 17, respectively, the filter 35 being configured to process the rf signal leaked through the cable 17 to isolate the rf signal in the cable 17.

Alternatively, the filter 35 may be fastened to the filter housing by screws. The filter shield is used for rf isolation protection of the filter 35 and takes on the function of a transfer fixation, which can be fastened to the side wall of the process chamber 5 by screws and is used for supporting the filter 35.

Based on the above arrangement, in case that the rf signal on the heating plate 12 leaks to the heating member 123 and the thermocouple 15, the rf signal can be transferred to the filter 35 through the respective cables 17, and the filter 35 filters the rf signal to cope with the safety risk of the complex rf signal leaking from the cable 17 to the outside of the process chamber 5, and also can alleviate the influence of the rf signal on the power supply performance.

In some embodiments, the semiconductor processing apparatus may further comprise a process chamber 5 and a sealing device 4. Wherein, the carrying boat 1 and the radio frequency isolation device 3 are both arranged in the process chamber 5, and the heating element 123 and the thermocouple 15 extend to the outer side of the process chamber 5 through the cable 17.

In order to avoid radio frequency power leakage caused by radio frequency signals on the heating plate 12 being transmitted from the cable 17 connected to the heating element 123 and the thermocouple 15 respectively to the outside of the process chamber 5, in the embodiment of the application, the sealing device 4 is connected between the cable 17 and the side wall of the process chamber 5 in a sealing manner. Based on this arrangement, the rf signal can be blocked by the sealing means 4 to prevent the rf signal from leaking out of the process chamber 5 via the cable 17, which poses a safety risk.

Referring to fig. 24, in some embodiments, the sealing device 4 may include a mounting member 41, a third press block 42, a top block 43, a spacer 44, and a locking member 45. Wherein, the mounting component 41 is connected to the side wall of the process chamber 5, the side wall of the process chamber 5 is provided with a mounting hole, the isolation sleeve 44 is movably arranged on the mounting component 41, at least part of the isolation sleeve 44 is arranged on the mounting hole, the third pressing block 42 is movably arranged on the mounting component 41 and is abutted with the isolation sleeve 44, the top block 43 is connected to the mounting component 41 through the locking piece 45 and is abutted with the third pressing block 42, and the cable 17 passes through the process chamber 5 through the mounting component 41 and the third pressing block 42.

Alternatively, the mounting member 41 may be fastened to the sidewall of the process chamber 5 by screws, and the spacer 44 may be positioned between the mounting member 41 and the sidewall of the process chamber 5 and may be movable relative to the mounting member 41, while the mounting member 41 may also limit the spacer 44 to prevent the spacer 44 from being removed from the process mounting hole.

The top block 43 may be locked to the mounting part 41 by the locking member 45 and the third pressing block 42 may be pressed by the top block 43, so that the spacer 44 may be pressed by the third pressing block 42, thereby ensuring that the spacer 44 may be reliably connected to the sidewall of the process chamber 5.

Alternatively, the spacer 44 may be made of ceramic, and the top block 43 may be made of resin, ceramic, or the like, which is capable of isolating radio frequency signals.

In some embodiments, the sealing device 4 may further comprise a first seal 46, a second seal 47, and a third seal 48. The first sealing element 46 is connected between the isolation sleeve 44 and the side wall of the process chamber 5 in a sealing manner, so that the isolation sleeve 44 and the side wall of the process chamber 5 can be sealed by the first sealing element 46 to prevent high-frequency signals from leaking outwards from the side wall of the process chamber 5 through the cable 17, the second sealing element 47 is connected between the mounting part 41 and the isolation sleeve 44 in a sealing manner, the isolation sleeve 44 and the mounting part 41 can be prevented from being contacted by the second sealing element 47, the isolation sleeve 44 is effectively prevented from being crushed, the third sealing element 48 is connected between the third pressing block 42 and the isolation sleeve 44 in a sealing manner, and the third sealing element 48 can play a role of blocking signals and playing a role of buffering.

It should be noted that, the first seal 46, the second seal 47, and the third seal 48 may be in a certain compression state to form a certain pre-tight sealing effect.

Based on the carrier boat 1, the embodiment of the application also discloses a semiconductor process device, which comprises a process chamber 5, the carrier boat 1, a matcher 6, a radio frequency feed-in device 2, a radio frequency isolation device 3 and the like. The carrier boat 1 is arranged in the process chamber 5 and is used for carrying a carrier plate with wafers placed thereon and providing a thermal environment and a radio frequency environment required by a process for the wafers, the matcher 6 is arranged on the outer side of the process chamber 5 and is connected with a radio frequency power supply and is used for realizing distribution of radio frequency power, the radio frequency power adjusting component 23 of the radio frequency feed-in device 2 is arranged on the outer side of the process chamber 5 and is connected with the matcher 6, one end of the feed-in connecting component 24 is arranged on the outer side of the process chamber 5 and is connected with the radio frequency power adjusting component 23, the other end of the feed-in connecting component 24 is arranged on the inner side of the process chamber 5 and is connected with the radio frequency feed-in device 2, and the radio frequency feed-in device 2 is arranged in the process chamber 5 and is connected with the heating plate 12. Based on the arrangement, the radio frequency signals output by the radio frequency power supply are subjected to power allocation according to the requirement by the matcher 6, the radio frequency signals corresponding to the allocated radio frequency power are transmitted to the radio frequency power adjusting component 23 to be allocated to the radio frequency signals on the single radio frequency electrode plate 12a so as to realize the uniformity of the radio frequency power in the layer, the allocated radio frequency signals are transmitted to the radio frequency feed-in piece 21 through the feed-in connecting component 24, and the radio frequency signals corresponding to the radio frequency power allocated by the matcher 6 are respectively fed to different radio frequency electrode plates 12a by the plurality of radio frequency feed-in pieces 21, so that the radio frequency signals can be generated between the radio frequency electrode plates 12a and the adjacent ground electrode plates 12b, and further, the radio frequency environment is provided for the process of the wafer.

It should be noted that, the rf power adjustment component 23 may be used to implement the rf power distribution on a single rf electrode plate 12a, i.e. intra-layer rf power distribution, and the matcher 6 may be used to implement the rf power distribution on a plurality of different rf electrode plates 12a, i.e. inter-layer rf power distribution.

In addition, the rf isolation device 3 can isolate the rf signal to prevent the rf power on the carrier boat 1 from leaking to the process chamber 5 to cause the rf power abnormality, and can also block the plasma in the process chamber 5 to prevent the plasma from damaging the components such as the cable 17, the transfer wire 16, the thermocouple 15, etc., or to influence the detection accuracy of the thermocouple 15.

A process chamber 5 and the carrier boat 1. Wherein the carrier boat 1 is disposed in the process chamber 5, and the potential of the grounding electrode plate 12b in the carrier boat 1 is different from the potential of the process chamber 5. Based on the above, the radio frequency signals can be transmitted along the boards carrying the boat 1 through the radio frequency loop adjustment, and the distribution of the radio frequency signals under the multi-layer radio frequency loop can be controlled.

In order to transfer the carrier plate carrying the wafers to the carrier boat 1 and remove the carrier plate from the carrier boat 1, the semiconductor processing apparatus in the embodiment of the present application may further include a pick-and-place device 7, and as shown in fig. 11, the pick-and-place device 7 may include an execution assembly, a power assembly, and a sealing assembly. The actuating assembly can be fixed on the power assembly and the sealing assembly in a screw fixing connection mode, the power assembly can comprise a driving mechanism such as an air cylinder and a motor so as to realize up-and-down movement of the actuating assembly, and the sealing assembly can use a sliding sealing mode such as corrugated pipe sealing.

As shown in fig. 12, in some embodiments, the executing assembly may include a pick-and-place member 71, where the pick-and-place member 71 may be provided with two-sided inclined guiding surfaces, so as to position the carrier plate in a left-and-right direction under the pick-and-place action through the two-sided inclined guiding surfaces, so as to ensure that the position of the carrier plate in the left-and-right direction is substantially free from deviation.

In addition, the execution assembly can be connected with the manipulator, so that the manipulator drives the execution assembly to horizontally move and lift, and the loading plate is taken and placed.

Optionally, the pick-and-place member 71 may be provided with a fixed slope, and the carrier supported by the pick-and-place member 71 may be limited by the fixed slope, so as to ensure that the carrier cannot move randomly relative to the pick-and-place member 71 during the movement process.

In addition, the carrier plate can be positioned in the front-rear direction by the front-rear slope of the positioning block of the positioning assembly 14, so that the position of the carrier plate in the front-rear direction is basically free from deviation.

As shown in fig. 25, in some embodiments, the load boat 1 may further include a lifting assembly 18, where the lifting assembly 18 is used to lift the carrier plate. The lifting assembly 18 may include a lifting member and a lifting support, where the lifting member may be electrically driven, pneumatically driven, hydraulically driven, etc., and the lifting member is connected to the lifting support to drive the lifting support to lift, and drive the carrier plate to lift between the heating plates 12 via the lifting support.

In order to facilitate taking and placing of the carrier plate, a notch may be further provided on the side of the carrier boat 1, so that the executing assembly can smoothly enter and exit the carrier boat 1.

In the embodiment of the application, the carrier plate can be placed on the lifting assembly 18 through the picking and placing device 7, the carrier plate is lowered by the lifting assembly 18 to be close to the heating plates 12, heating can be started at the moment, and glow discharge is started between the adjacent heating plates 12 to form plasma, so that the temperature environment and the radio frequency environment required by the process are met, after the reaction is finished, the carrier plate is lifted by the lifting assembly 18, and the carrier plate is taken away from the lifting assembly and removed from the carrier boat 1 by the picking and placing device 7.

The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.

Claims

1. The semiconductor process equipment is characterized by comprising a bearing boat (02) and a radio frequency isolation device (01);

The bearing boat (02) comprises a plurality of heating plates (021) which are respectively used as radio frequency electrode plates or grounding electrode plates, the heating plates (021) are provided with heating pieces (0211), one ends of the heating pieces (0211) are led out relative to the heating plates (021), and the heating pieces (0211) comprise metal sleeves (02111);

The radio frequency isolation device (01) comprises a first isolation component (10), the first isolation component (10) comprises an isolation ring (11), and the isolation ring (11) is connected to the metal sleeve (02111) and used for blocking radio frequency signals in the heating plate (021) from being transmitted out through the metal sleeve (02111).

2. The semiconductor processing apparatus according to claim 1, wherein the spacer ring (11) is provided at one end of the heating member (0211) and is connected to an end face of the metal sleeve (02111);

Or the isolating ring (11) is arranged between one end of the heating piece (0211) and the edge of the heating plate (021), and the metal sleeve (02111) is divided into two parts in the axial direction of the metal sleeve (02111).

3. The semiconductor process apparatus of claim 2, wherein the spacer ring (11) comprises a metallic ring (111) and a non-metallic ring (112), the metallic ring (111) being connected to the metallic sleeve (02111);

The shaft end of one of the nonmetallic ring (112) and the metallic ring (111) is provided with a connecting groove (1121), the shaft end of the other one is provided with a connecting protrusion (1111), and the connecting protrusion (1111) is in fit connection with the connecting groove (1121);

And/or the metal ring (111) is connected to the non-metal ring (112) at least one axial end.

4. The semiconductor processing apparatus of claim 1, wherein the first isolation assembly (10) further comprises a first shield (12), the first shield (12) connecting the isolation ring (11) and the carrier boat (02) and being sleeved outside the metal sleeve (02111) for blocking plasma.

5. The semiconductor processing apparatus according to claim 1, wherein the heating element (0211) further comprises a heating wire core wire (02112), the heating wire core wire (02112) is arranged on the inner side of the metal sleeve (02111) in a penetrating manner, an insulating layer (02113) is arranged between the heating wire core wire (02112) and the metal sleeve (02111), and an outgoing end of the heating wire core wire (02112) is used for being connected with a cable (032) through a transfer wire (031);

The radio frequency isolation device (01) further comprises a second isolation assembly (20) and a first pressing block (30), wherein the second isolation assembly (20) is used for being arranged on the outer side of the transfer conductor (031), one end of the second isolation assembly (20) is in butt joint with the first isolation assembly (10), and the first pressing block (30) is in butt joint with the other end of the second isolation assembly (20) and is connected to the heating plate (021) through a fastening piece.

6. The semiconductor processing apparatus of claim 5, wherein the second isolation assembly (20) comprises a second protective sheath (21), a fourth protective sheath (23) and a third protective sheath (22) disposed in sequence;

The second protective sleeve (21) is sleeved on the outer side of the joint of the transfer lead (031) and the heating wire core wire (02112);

The third protective sleeve (22) is sleeved on the outer side of the joint of the transfer lead (031) and the cable (032);

The fourth protective sleeve (23) is sleeved outside the region between the two ends of the transfer lead (031).

7. The semiconductor processing apparatus according to claim 5, wherein the lead-out end of the heater wire core wire (02112) of each of the heater plates (021) is led out in the plate surface direction of the heater plate (021) so that the total lengths of the heater wire core wires (02112), the transit wires (031) and the cables (032) corresponding to a plurality of the heater plates (021) are equal;

And/or, the first isolation component (10) and the second isolation component (20) extend along the plate surface direction of the corresponding heating plate (021).

8. The semiconductor processing apparatus of claim 1, wherein the carrier boat (02) further comprises a thermocouple (022), a detection end of the thermocouple (022) being provided to the heating plate (021);

The radio frequency isolation device (01) further comprises a third isolation component (40), and the third isolation component (40) is arranged on the outer side of the thermocouple (022).

9. The semiconductor processing apparatus of claim 8, wherein the third isolation assembly (40) comprises a fifth protective sheath (41), a sixth protective sheath (42), and a second press block (43);

The fifth protective sleeve (41) is sleeved on the periphery and the end part of the thermocouple (022) which are arranged at one end of the heating plate (021);

The second pressing block (43) is connected to the heating plate (021) through a fastener, and the fifth protective sleeve (41) is arranged between the second pressing block (43) and the heating plate (021);

The sixth protective sleeve (42) is sleeved on the outer side of the thermocouple (022) and is in butt joint with the second pressing block (43).

10. The semiconductor processing apparatus according to claim 9, characterized in that the fifth protective sleeve (41) is slidingly connected with the second press block (43) in the extension direction of the thermocouple (022);

The third isolation assembly (40) further comprises an elastic piece (44) and a limiting piece (45), the limiting piece (45) is connected to the thermocouple (022) or the fifth protective sleeve (41), and the elastic piece (44) is elastically connected with the limiting piece (45) and the second pressing piece (43).

11. The semiconductor processing apparatus according to claim 9, wherein the sixth protective sleeve (42) comprises a plurality of sleeve units (421) arranged in sequence, and two adjacent sleeve units (421) are slidingly connected along the extending direction of the thermocouple (022);

And/or one end of the sixth protective sleeve (42) is slidably connected with the second pressing block (43) along the extending direction of the thermocouple (022).

12. The semiconductor process equipment according to claim 8, further comprising a filter (04), the filter (04) being connected to the heating element (0211) and the thermocouple (022) by means of a cable (032), respectively, the filter (04) being adapted to process radio frequency signals leaking via the cable (032).

13. The semiconductor process apparatus according to claim 8, further comprising a process chamber (06) and a sealing device (05);

The bearing boat (02) and the radio frequency isolation device (01) are arranged in the process chamber (06);

The heating element (0211) and the thermocouple (022) extend to the outer side of the process chamber (06) through cables (032) respectively;

the sealing device (05) is connected between the cable (032) and the side wall of the process chamber (06) in a sealing way.

14. The semiconductor process apparatus of claim 13, wherein the sealing device (05) comprises a mounting part (051), a third press block (052), a top block (053), a spacer sleeve (054) and a locking member (055);

The mounting part (051) is connected to a side wall of the process chamber (06);

the side wall of the process chamber (06) is provided with a mounting hole, the isolation sleeve (054) is movably arranged on the mounting component (051), and at least part of the isolation sleeve (054) is arranged in the mounting hole;

the third pressing block (052) is movably arranged on the mounting component (051) and is abutted with the isolation sleeve (054);

The jacking block (053) is connected to the mounting component (051) through the locking piece (055) and is abutted against the third pressing block (052);

The cable (032) passes out of the process chamber (06) via the mounting part (051) and the third press block (052).

15. The semiconductor process apparatus of claim 14, wherein said sealing arrangement (05) further comprises a first seal (056), a second seal (057) and a third seal (058);

the first sealing element (056) is connected between the isolating sleeve (054) and the side wall of the process chamber (06) in a sealing way;

the second sealing element (057) is connected between the mounting part (051) and the isolating sleeve (054) in a sealing way;

the third sealing piece (058) is connected between the third pressing block (052) and the isolation sleeve (054) in a sealing mode.