CN119609803A - Wafer thinning processing system and processing method - Google Patents
Wafer thinning processing system and processing method Download PDFInfo
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- CN119609803A CN119609803A CN202411817743.8A CN202411817743A CN119609803A CN 119609803 A CN119609803 A CN 119609803A CN 202411817743 A CN202411817743 A CN 202411817743A CN 119609803 A CN119609803 A CN 119609803A
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- electromagnetic force
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/22—Equipment for exact control of the position of the grinding tool or work at the start of the grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明公开了一种晶圆减薄加工系统及加工方法，晶圆减薄加工系统包括主轴、加工平台、基架、电磁力模组与压力调节单元，加工平台位于主轴的下方，主轴沿竖向滑动连接于基架，电磁力模组沿竖向相对设置有两个，其中一个连接于主轴，另一个连接于基架，两个电磁力模组产生相互的电磁力，压力调节单元包括控制模块、压力检测模块与电源，控制模块能够根据加工压力改变电源向电磁力模组的供电量，以调节两个电磁力模组之间的电磁力，进而改变加工头与晶圆之间的加工压力，使加工头与晶圆之间的加工压力保持稳定，响应速度快，调节精度高，能够精确控制晶圆的减薄厚度，提高晶圆的加工效率。
The invention discloses a wafer thinning processing system and a processing method. The wafer thinning processing system includes a main shaft, a processing platform, a base frame, an electromagnetic force module and a pressure regulating unit. The processing platform is located below the main shaft, and the main shaft is connected to the base frame along a vertical sliding direction. Two electromagnetic force modules are arranged vertically opposite to each other, one of which is connected to the main shaft and the other is connected to the base frame. The two electromagnetic force modules generate mutual electromagnetic force. The pressure regulating unit includes a control module, a pressure detection module and a power supply. The control module can change the power supply of the electromagnetic force module to the electromagnetic force module according to the processing pressure to adjust the electromagnetic force between the two electromagnetic force modules, thereby changing the processing pressure between the processing head and the wafer, so that the processing pressure between the processing head and the wafer remains stable, the response speed is fast, the adjustment accuracy is high, the thinning thickness of the wafer can be accurately controlled, and the processing efficiency of the wafer is improved.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a wafer thinning processing system and a processing method.
Background
In the chip processing process, the wafer for preparing the chip needs to be subjected to the actions of mechanical, physical, chemical and thermal treatments for many times, so that a great amount of stress is generated in the wafer, and the wafer needs to be maintained at a certain thickness in order to prevent the wafer from cracking and warping under the stress action and further affecting the flatness of the wafer. The conventional wafer thinning method mainly comprises the steps of firstly reducing the thickness of a thin wafer through grinding, then polishing to remove a subsurface damage layer and a stress concentration layer of the wafer, and pressing the wafer through a processing head by a spindle of a processing device in the grinding and polishing process, wherein the processing surface of the wafer is uneven, so that the processing pressure applied to the wafer by the processing head is unstable, the processing pressure of the conventional processing device can be regulated only through a cylinder, the pressure regulation precision of the cylinder is lower, the response speed is lower, the thinning thickness of the wafer is difficult to control, and the processing efficiency of the wafer is affected.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a wafer thinning processing system which can adjust the processing pressure in the wafer thinning process, control the thinning thickness of the wafer and improve the processing efficiency.
The invention also provides a wafer thinning processing method executed by the wafer thinning processing system.
A wafer thinning processing system according to an embodiment of the first aspect of the present invention includes:
The lower end of the main shaft is used for installing a processing head;
the processing platform is positioned below the main shaft and is used for fixing a wafer to be processed;
The main shaft is vertically connected with the base frame in a sliding manner and can be lifted relative to the base frame;
Two electromagnetic force modules are oppositely arranged along the vertical direction, one electromagnetic force module is connected with the main shaft, the other electromagnetic force module is connected with the base frame, and after the two electromagnetic force modules are electrified, mutual electromagnetic force can be generated;
The pressure regulating unit comprises a control module, a pressure detection module and a power supply, wherein the power supply is electrically connected with the electromagnetic force modules and supplies power to the electromagnetic force modules, the pressure detection module is used for detecting the processing pressure between the processing head and the wafer, and the control module is used for changing the power supply quantity of the power supply to the electromagnetic force modules according to the processing pressure so as to regulate electromagnetic force between the two electromagnetic force modules.
The wafer thinning processing system provided by the embodiment of the invention has at least the following beneficial effects:
According to the invention, the control module can change the power supply amount of the power supply to the electromagnetic force modules according to the processing pressure so as to adjust the electromagnetic force between the two electromagnetic force modules, and then change the processing pressure between the processing head and the wafer, so that the real-time adjustment of the processing pressure according to the current processing condition of the wafer is realized, the processing pressure between the processing head and the wafer is kept stable, the electromagnetic force adjustment is realized by changing the power supply amount of the power supply to the electromagnetic force modules, the response speed is high, the adjustment precision is high, the thickness reduction of the wafer can be accurately controlled, and the processing efficiency of the wafer is improved.
According to some embodiments of the invention, the wafer thinning processing system further comprises an elastic member capable of elastic expansion and contraction along a vertical direction, wherein the elastic member is used for providing an upward elastic force to the spindle, and the elastic member is connected between an upper end of the spindle and an upper end of the base frame, and/or the elastic member is connected between a lower end of the spindle and an upper end of the base frame.
According to some embodiments of the invention, the electromagnetic force module comprises a coil and a magnet, wherein the coil can generate a magnetic field after being electrified, at least part of the magnetic field of the magnet acts on the coil in the same direction as the magnetic field of the coil, and the power supply is used for supplying power to the coil.
According to some embodiments of the invention, among the two electromagnetic force modules, the electromagnetic force module with larger height is connected to the base frame, the electromagnetic force module with smaller height is connected to the main shaft, and the electromagnetic force module with smaller height has attractive electromagnetic force;
Or in the two electromagnetic force modules, the electromagnetic force module with smaller height is connected with the base frame, the electromagnetic force module with larger height is connected with the main shaft, and the two electromagnetic force modules have repulsive electromagnetic force.
According to some embodiments of the invention, the electromagnetic force module further comprises an iron core, and the coil is sleeved outside the iron core.
According to some embodiments of the invention, the electromagnetic force module comprises one coil and a plurality of magnets, wherein the plurality of magnets are arranged around the periphery of the coil, and each magnet has the same magnetic pole along the same end in the vertical direction.
According to some embodiments of the invention, in the same electromagnetic force module, the coil located at the center of the electromagnetic force module is a first coil, the other coils are second coils, the second coils are arranged at least one circle around the circumference of the first coil, the magnets are arranged at least one circle around the circumference of the first coil, the coils and the magnets are alternately arranged along the radial direction of the first coil, the directions of magnetic fields generated by all the coils are the same, and the magnetic poles of all the magnets at the same end along the vertical direction are the same;
Or the electromagnetic force module comprises a plurality of magnetic units, the magnetic units are distributed along a first direction and/or a second direction, each magnetic unit comprises at least one magnet and a plurality of coils which are arranged around the periphery of the magnet, the magnetic field direction of the magnet acting on the coil is the same as the magnetic field direction of the coil, the magnetic poles of the same end of the magnet in the adjacent magnetic units along the first direction and/or the second direction are opposite, and the first direction, the second direction and the vertical direction are perpendicular to each other.
According to a second aspect of the present invention, a wafer thinning processing method is performed by using the wafer thinning processing system in the first aspect, and includes:
The wafer is placed on the top of the processing platform, the base frame is controlled to carry the main shaft to descend to a preset height, the processing head works, and the wafer is thinned;
the pressure detection module detects the processing pressure between the processing head and the wafer, the control module sends a control instruction to the power supply according to the processing pressure, and the power supply changes the power supply quantity of the electromagnetic force module according to the control instruction so as to adjust the electromagnetic force between the two electromagnetic force modules.
According to some embodiments of the invention, the step of changing the power supply amount of the electromagnetic force module by the power supply according to the control command includes:
changing the current of the electromagnetic force module which is fed by the power supply;
And/or the electromagnetic force module comprises a coil and a magnet, wherein the coil can generate a magnetic field after being electrified, at least part of the magnetic field acting on the coil is in the same direction as the magnetic field of the coil, the power supply is used for supplying power to the coil, and the electric connection between part of the coil and the power supply is restored or cut off.
According to some embodiments of the invention, further comprising:
An elastic piece is arranged between the main shaft and the base frame, an upward elastic force is provided for the main shaft through the elastic piece, after the base frame carries the main shaft to descend to a preset height, the pressure between the processing head and the wafer is controlled to be a first pressure F 1, the elastic piece has a first compression amount L 1, then the base frame is controlled to retract for a preset distance, the pressure between the processing head and the wafer is controlled to be a second pressure F 2, the elastic piece has a second compression amount L 2,L1＞L2,F1＞F2, and then the processing head is controlled to start working at the second pressure F 2.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The invention is further described with reference to the accompanying drawings and examples, in which:
FIG. 1 is a schematic diagram of a wafer thinning processing system according to an embodiment of the present invention;
FIG. 2 is a control flow diagram of one embodiment of a pressure regulating unit;
FIG. 3 is a schematic diagram of an electromagnetic force module in some embodiments;
FIG. 4 is a perspective view of some embodiments of electromagnetic force modules;
FIG. 5 is a cross-sectional view of one embodiment of the electromagnetic force module of FIG. 4;
FIG. 6 is a schematic diagram of an arrangement of coils and magnets in some embodiments;
FIG. 7 is a schematic diagram of an arrangement of coils and magnets in other embodiments;
FIG. 8 is a schematic diagram of the arrangement of coils and magnets in other embodiments;
fig. 9 is a schematic diagram of the electromagnetic force module of fig. 4 after the hidden part structure.
Reference numerals:
Spindle 100, first connection 110, second connection 120, processing platform 200, base frame 300, processing head 400, electromagnetic force module 500, coil 510, magnet 520, magnetic unit 530, housing 540, first mounting cavity 541, second mounting cavity 542, housing 543, mounting plate 544, iron core 550, bracket 560, cover plate 570, cooling plate 580, bottom plate 590, pressure adjusting unit 600, control module 610, pressure detecting module 620, power supply 630, operating module 640, and elastic member 700.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
In the description of the present invention, the descriptions of the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Referring to fig. 1 and 2, the wafer thinning processing system includes a spindle 100, a processing platform 200, and a base frame 300, wherein the lower end of the spindle 100 is used for mounting a processing head 400, the processing platform 200 is located below the spindle 100, and is used for fixing a wafer to be processed, so that the wafer is kept in a stable position during the thinning process. The processing head 400 is in contact with the surface of the wafer during processing and thins the wafer, and the processing head 400 is not limited to a grinding wheel, a grinding head, or the like provided to be capable of grinding the wafer, or a polishing head or the like provided to be capable of polishing the wafer. The spindle 100 is slidably connected to the base frame 300 along a vertical direction and can be lifted relative to the base frame 300, the processing head 400 is fixedly mounted at the lower end of the spindle 100 and can be lifted along with the spindle 100 so as to approach or depart from the processing platform 200, and the relative position relationship between the processing head 400 and a wafer is adjusted, so that feeding of the processing head 400 is realized.
In the wafer processing process, the processing surface is uneven, so that the processing pressure between the wafer and the processing head 400 is changed at any time, and is excessively large or small, so that an additional force needs to be applied to the spindle 100 to maintain the processing pressure stable, the manner of applying the force to the spindle 100 by using the cylinder is limited by the opening and closing frequency and the processing precision of the air valve, the corresponding speed is low, the adjustment precision of the processing pressure is low, and the thickness reduction of the wafer is difficult to control.
In the present invention, the wafer thinning processing system further includes two electromagnetic force modules 500, wherein two electromagnetic force modules 500 are oppositely arranged along the vertical direction, and after the two electromagnetic force modules 500 are electrified, electromagnetic force is provided between the two electromagnetic force modules 500, wherein the electromagnetic force can be electromagnetic attraction force or repulsive force, one electromagnetic force module 500 is connected to the spindle 100, and the other electromagnetic force module 500 is connected to the base frame 300, so that the spindle 100 is subjected to electromagnetic force exerted by the electromagnetic force modules 500. In the process of thinning the wafer, the processing head 400 applies downward pressure to the wafer, so that the processing head 400 and the wafer keep in contact, where the pressure is the processing pressure, and the processing pressure is mainly derived from the gravity of the spindle 100 and the resultant force of the acting forces such as the electromagnetic force provided by the electromagnetic force module 500.
The wafer thinning processing system further comprises a pressure adjusting unit 600, the pressure adjusting unit 600 comprises a control module 610, a pressure detecting module 620 and a power supply 630, the pressure detecting module 620 is not limited to be a piezoresistive type or strain type pressure sensor, the power supply 630 is electrically connected with the electromagnetic force module 500 and supplies power to the electromagnetic force module 500, the electromagnetic force module 500 generates a magnetic field after being electrified, the pressure detecting module 620 is used for detecting the processing pressure between the processing head 400 and the wafer, the control module 610 is not limited to be PLC, ARM, PAC, an industrial personal computer and the like, the control module 610 is used for changing the power supply amount of the power supply 630 to the electromagnetic force module 500 according to the processing pressure so as to adjust the electromagnetic force between the two electromagnetic force modules 500, and further, the processing pressure between the processing head 400 and the wafer is changed, the real-time adjustment of the processing pressure according to the current processing condition of the wafer is realized, the processing pressure between the processing head 400 and the wafer is kept stable, the adjustment of the electromagnetic force is realized by changing the power supply amount of the power supply 630 to the electromagnetic force module 500, the response speed is high, the adjustment precision is high, the thinning thickness of the wafer can be accurately controlled, and the processing efficiency of the wafer is improved.
It is understood that the electromagnetic force module 500 should include a conductor, and when the power source 630 is powered on the electromagnetic force module 500, a current passes through the conductor and generates a magnetic force, so that a mutual electromagnetic force is generated between the two electromagnetic force modules 500. In addition, the magnitude of the electromagnetic force between the two electromagnetic force modules 500 can be changed by changing the magnitude of the current supplied from the power supply 630 to the electromagnetic force modules 500. In addition, by setting the power supply 630 to supply current in the same direction to the two electromagnetic force modules 500, attractive electromagnetic force can be generated between the two electromagnetic force modules 500, and setting the power supply 630 to supply current in opposite directions to the two electromagnetic force modules 500, repulsive electromagnetic force can be generated between the two electromagnetic force modules 500.
In an embodiment, referring to fig. 3 and 4, the electromagnetic force module 500 includes a coil 510 and a magnet 520, the magnet 520 itself has magnetism and has two magnetic poles with opposite polarities, such as N pole and S pole, based on the magnetic effect of current, the coil 510 generates a magnetic field after being energized, at least part of the electromagnetic force module 500 has a constant electromagnetic force between the two opposite magnetic poles 520, the magnet 520 generates a magnetic field around the same magnetic pole as the magnetic pole of the same end of the at least part of the magnet 520 in the vertical direction, the coil 510 around the magnet 520 is within the magnetic field range generated by the magnet 520, the magnetic field generated by the magnet 520 acts on the coil 510 in the same direction as the magnetic field generated by the coil 510 itself, the magnetic field generated by the magnet 520 is superposed with the magnetic field generated by the coil 510, the superposed magnetic field acts on the other coil 510 opposite to generate a mutual electromagnetic force between the two electromagnetic force modules 500, and in addition, the two opposite magnetic fields 520 in the two electromagnetic force modules 500 have a constant electromagnetic force therebetween, the electromagnetic force received by the magnet 520 is the same direction as the electromagnetic force received by the coil 510 and superposed, and the electromagnetic force between the two electromagnetic force modules 500 can be increased.
It should be noted that, after the coils 510 in the two electromagnetic force modules 500 are energized, the two coils 510 facing each other are located in the magnetic field range of each other and generate mutual electromagnetic force, because the magnetic field generated by the magnet 520 is overlapped with the magnetic field generated by the adjacent coils 510, the electromagnetic force between the coils 510 is increased, the electromagnetic force received by the magnet 520 is in the same direction as the electromagnetic force received by the coils 510 and can be overlapped, the processing pressure range adjustable by the electromagnetic force adjusting device is increased, and the electromagnetic force adjusting device can be suitable for use situations of adjusting the processing pressure in a large range.
It should be noted that, the arrangement of the coils 510 and the magnets 520 in the two oppositely disposed electromagnetic force modules 500 is the same, one coil 510 in one electromagnetic force module 500 is always vertically opposite to one coil 510 in the other electromagnetic force module 500 and is located within the magnetic field range of the opposite coil 510, and similarly, one magnet 520 in one electromagnetic force module 500 is always opposite to one magnet 520 in the other electromagnetic force module 500 and is located within the magnetic field range of the opposite magnet 520.
In an embodiment, two electromagnetic force modules 500 may be disposed symmetrically with respect to the middle plane, and the vertical direction is perpendicular to the middle plane, so that the distances between two coils 510 opposite to the two electromagnetic force modules 500 and between two opposite magnets 520 are as close as possible, and two coils 510 opposite to each other in the two electromagnetic force modules 500 can be located in the strong magnetic field regions of each other to increase the electromagnetic force between the two electromagnetic components. The term "two electromagnetic force modules 500 are symmetrically disposed with respect to the middle plane" simply means that the structural arrangement of the electromagnetic force modules 500 is symmetrical to each other, and that the magnetic pole arrangement of the magnet 520 in different electromagnetic force modules 500 and the direction of the current flowing into the coil 510 can be flexibly set according to the actual situation on the premise that the direction of the magnetic field acting on the coil 510 by the magnet 520 in the same electromagnetic force module 500 is the same as the direction of the magnetic field of the coil 510 itself.
Adjustment of the amount of power supplied may be achieved by varying the amount of current flowing into the coils 510, or by varying the number of coils 510 that are electrically connected to the power source 630. That is, the current supplied to the coil 510 from the power source 630 is reduced, the magnetic field generated by the coil 510 is reduced, the electromagnetic force applied to the spindle 100 from the electromagnetic force module 500 is reduced, the current supplied to the coil 510 from the power source 630 is increased, the magnetic field generated by the coil 510 is increased, the electromagnetic force applied to the spindle 100 from the electromagnetic force module 500 is increased, or the electric conduction between the power source 630 and a part of the coils 510 is cut off, the number of coils 510 capable of generating the magnetic field is reduced, the electromagnetic force applied to the spindle 100 from the electromagnetic force module 500 is reduced, the electric conduction between the power source 630 and the coils 510 is restored, and the number of coils 510 capable of generating the magnetic field is increased, so that the electromagnetic force applied to the spindle 100 from the electromagnetic force module 500 is increased.
Because the spindle 100 is heavier, the gravity of the spindle 100 is far greater than the processing pressure required by the wafer, the electromagnetic force module 500 applies an upward electromagnetic force to the spindle 100, so that the adjusting range of the electromagnetic force by the electromagnetic force module 500 can meet the requirement of the processing pressure of the wafer, in an embodiment, referring to fig. 1 and 2, the wafer thinning processing system further comprises an elastic member 700 capable of elastically stretching along the vertical direction, the elastic member 700 is used for providing an upward elastic force to the spindle 100, the elastic force applied by the elastic member 700 to the spindle 100 and the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100 have the same direction, and the resultant force of the elastic force, the electromagnetic force and the gravity of the spindle 100 are downward, and form the processing pressure to the wafer, and the elastic force of the elastic member 700 can offset part of the gravity of the spindle 100, so that the adjusting range of the electromagnetic force can more easily meet the processing pressure requirement of the wafer.
Specifically, the elastic member 700 may be provided as an elastic member capable of elastically deforming and automatically recovering, such as a spring, a leaf spring, or the like. Referring to fig. 1, the spindle 100 includes a first connecting portion 110 and a second connecting portion 120, the second connecting portion 120 is connected to a lower end of the first connecting portion 110, a cross-sectional area of the first connecting portion 110 along a middle plane is larger than a cross-sectional area of the second connecting portion 120 along the middle plane, a lower end of the second connecting portion 120 is provided for the processing head 400 to mount, at least a portion of the first connecting portion 110 is located inside the base frame 300, one end of the elastic member 700 is connected to a surface of a bottom wall of the base frame 300, and the other end is connected to a lower end of the first connecting portion 110 to provide an upward elastic force to the first connecting portion 110.
In addition, the repulsive force or attractive force generated between the electromagnetic force modules 500 can be selected according to the position where the electromagnetic force modules 500 are connected to the spindle 100 and the specific processing pressure requirement, for example, two electromagnetic force modules 500 are located above the spindle 100, and attractive electromagnetic force can be generated between the electromagnetic force modules 500, so that the spindle 100 receives upward acting force of the electromagnetic force modules 500, or two electromagnetic force modules 500 are located below the spindle 100, and repulsive electromagnetic force can be generated between the electromagnetic force modules 500, so that the spindle 100 receives upward acting force of the electromagnetic force modules 500.
In an embodiment, in the two electromagnetic force modules 500, the opposite magnetic poles of the two magnets 520 arranged vertically opposite to each other are the same, so that a repulsive electromagnetic force is generated between the two magnets 520, and since the direction of the magnetic field generated by energizing the coils 510 is the same as the direction of the magnetic field acting on the coils 510, a repulsive electromagnetic force is also generated between the two coils 510 arranged vertically opposite to each other, in which case the two electromagnetic force modules 500 have repulsive electromagnetic forces. Or in another embodiment, in the two electromagnetic force modules 500, the opposite magnetic poles of the two magnets 520 arranged in the vertical opposite direction are opposite, so that attractive electromagnetic force is generated between the two magnets 520, and because the direction of the magnetic field generated by energizing the coils 510 is the same as the direction of the magnetic field acting on the coils 510, attractive electromagnetic force is also generated between the two coils 510 arranged in the vertical opposite direction, in which case, the two electromagnetic force modules 500 have attractive electromagnetic force.
For example, in the embodiment shown in fig. 3, the electromagnetic force modules a and B are vertically distributed and symmetrical with respect to the middle plane, the electromagnetic force module a is located above the electromagnetic force module B, the electromagnetic force module B is located below the electromagnetic force module a, the electromagnetic force module a includes a magnet a and a coil a, and the electromagnetic force module B includes a magnet B and a coil B. As shown in fig. 3 (a), in the electromagnetic force module a, a magnetic field inside the magnet a is upward along a vertical component, a magnetic field outside the magnet a and acting on the coil a is downward along the vertical component, and a magnetic field generated inside the coil a after the coil a is energized is downward along the vertical component, so that a magnetic field generated after the coil a is energized is the same as a magnetic field outside the magnet a in direction and can be overlapped, and the coil B is located in a magnetic field range after the overlapping and is subjected to electromagnetic force applied by the overlapped magnetic field. In the electromagnetic force module B, the magnetic field inside the magnet B faces downwards along the vertical component, the magnetic field outside the magnet B and acting on the coil B faces upwards along the vertical component, the magnetic field inside the coil B generated after the coil B is electrified faces upwards along the vertical component, the magnetic field generated after the coil B is electrified is the same as the magnetic field outside the magnet B in direction and can be overlapped, and the coil A is located in the overlapped magnetic field range and receives electromagnetic force applied by the overlapped magnetic field. In this case, the opposite magnetic poles of the opposite magnet a and the opposite magnet B are the same, and repel each other, and the opposite coil a and the opposite coil B are the same, and repel each other, so that the repulsive electromagnetic force is generated between the electromagnetic force module a and the electromagnetic force module B.
As shown in fig. 3 (B), in the electromagnetic force module a, the magnetic field inside the magnet a is upward along the vertical component, the magnetic field outside the magnet a and acting on the coil a is downward along the vertical component, and the magnetic field inside the coil a generated after the coil a is energized is downward along the vertical component, so that the magnetic field generated after the coil a is energized is the same as the magnetic field outside the magnet a in direction and can be overlapped, and the coil B is located in the overlapped magnetic field range and is subjected to electromagnetic force applied by the overlapped magnetic field. In the electromagnetic force module B, the magnetic field inside the magnet B is upward along the vertical component, the magnetic field outside the magnet B and acting on the coil B is downward along the vertical component, the magnetic field inside the coil B generated after the coil B is electrified is downward along the vertical component, the magnetic field generated after the coil B is electrified is the same as the magnetic field outside the magnet B in direction and can be overlapped, and the coil A is positioned in the overlapped magnetic field range and receives the electromagnetic force applied by the overlapped magnetic field. In this case, the opposite magnetic poles of the opposite ends of the magnet a and the magnet B are opposite, and attract each other, and the opposite magnetic poles of the opposite coil a and the opposite coil B are opposite, so that attractive electromagnetic force is generated between the electromagnetic force module a and the electromagnetic force module a.
In addition, two electromagnetic force modules 500 may be provided, in which the electromagnetic force module 500 with a larger height is connected to the frame, the electromagnetic force module 500 with a smaller height is connected to the spindle 100, and the electromagnetic force module 500 applies an upward force to the spindle 100 with a attractive electromagnetic force between the two electromagnetic force modules 500. Or two electromagnetic force modules 500 are provided, wherein the electromagnetic force module 500 with smaller height is connected with the base frame 300, the electromagnetic force module 500 with larger height is connected with the main shaft 100, and repulsive electromagnetic force exists between the two electromagnetic force modules 500, so that the electromagnetic force module 500 applies upward acting force to the main shaft 100.
In one embodiment, the wafer thinning processing system further includes a driving mechanism, where the driving mechanism is used to drive the spindle 100 to lift, and when the spindle 100 is fed downward, the processing head 400 is moved to a preset height to thin the wafer by a preset thickness, and when the thickness of a certain layer of the wafer is thinned, the driving mechanism can continuously control the base frame 300 to descend, so that the spindle 100 drives the processing head 400 to continuously feed downward. In addition, the driving mechanism can also realize the change of elastic force when driving the base frame 300, for example, when the driving mechanism drives the main shaft 100 to descend to a certain height, the elastic member 700 has a corresponding compression amount, when the driving mechanism continues to drive the main shaft 100 to descend, the elastic member 700 continues to be compressed, the compression amount and the elastic force of the elastic member 700 are increased, when the driving mechanism drives the base frame 300 to ascend, the elastic member 700 rebounds, the compression amount and the elastic force of the elastic member 700 are reduced, therefore, the driving mechanism can drive the base frame 300 to ascend and descend according to the processing pressure required by the wafer, the compression amount of the elastic member 700 is changed, and the current processing pressure between the processing head 400 and the wafer is adjusted.
The pressure adjusting unit 600 further includes an operation module 640, the operation module 640 may be integrated at a PC end, the operation module 640 is in communication connection with the control module 610, the communication connection is not limited to connection modes such as bluetooth, wifi, infrared, wire connection, etc., and the PC provides a man-machine interaction interface for displaying a current processing state of the wafer thinning processing system and for an operator to adjust various processing parameters.
In addition, referring to fig. 5, the electromagnetic force module 500 further includes an iron core 550, the coil 510 is sleeved outside the iron core 550, and after the coil 510 is energized, the iron core 550 is magnetized in a magnetic field generated by the coil 510, so that the magnetic induction intensity of the magnetic field generated by the coil 510 can be enhanced, and the electromagnetic force between the electromagnetic force modules 500 can be further enhanced.
It is understood that each electromagnetic force module 500 may include a plurality of coils 510 and/or a plurality of magnets 520, the plurality of magnets 520 in different electromagnetic force modules 500 interact, the electromagnetic force between the magnets 520 in different electromagnetic force modules 500 increases, and the magnetic field generated by the plurality of magnets 520 can act on the same coil 510 to increase the electromagnetic force between the coils 510 in different electromagnetic force modules 500 to increase the electromagnetic force between the electromagnetic force modules 500, or the magnetic field generated by the magnets 520 can act on different coils 510 to synchronously generate electromagnetic force between the plurality of coils 510 in different electromagnetic force modules 500 to increase the electromagnetic force between the coils 510 in different electromagnetic force modules 500.
In addition, the arrangement direction of the coil 510 and the magnet 520 is parallel to the middle plane, so that the component of the magnetic field generated by the magnet 520 along the vertical direction can be overlapped with the component of the magnetic field generated by the coil 510 per se, and because the two electromagnetic force modules 500 are distributed along the vertical direction, the magnetic fields generated by the two electromagnetic force modules 500 can enable the two electromagnetic force modules 500 to generate electromagnetic force which interacts along the vertical direction, so that the electromagnetic force adjusting device can provide and adjust the electromagnetic force along the vertical direction, and the balance and stability of the spindle 100 in the wafer thinning process can be maintained due to the stable direction of the electromagnetic force.
It should be noted that, the "arrangement direction of the coils 510 and the magnets 520" includes the arrangement direction of the plurality of coils 510, the arrangement direction between the plurality of magnets 520, and the arrangement direction of the mixed coils 510 and magnets 520. In addition, the closer to the magnet 520 the denser the region magnetic induction lines are, the more distant from the magnet 520 the thinner the region magnetic induction lines are, so the coil 510 is greatly influenced by the magnetic field generated by the magnet 520 which is closest to the coil, the direction of the magnetic field generated by the coil 510 after being electrified is the same as the direction of the magnetic field generated by the magnet 520 which is closest to the coil, so that the magnetic induction lines are positioned in the region of the coil 510 as much as possible, the magnetic field intensity after the superposition of the two magnetic fields is increased, the distance between the coil 510 and other magnets 520 with different magnetism is increased, and the influence of other magnets 520 on the coil 510 is reduced. In addition, in the two electromagnetic force modules 500, the distance between the coils 510 and between the magnets 520 and 520 is closest, and the electromagnetic force between the coils 510 and between the magnets 520 and 520 is less affected by the other coils 510 and 520.
In addition, the cross sections of the coil 510 and the magnet 520 parallel to the middle plane are not limited to being provided in a circular shape, a polygonal shape, etc., and in order to facilitate the arrangement of the coil 510 and the magnet 520 along the middle plane and to effectively use the space of the electromagnetic force module 500 on the middle plane, the cross section diameters of the coil 510 and the magnet 520 may be provided to be approximately equal.
As shown in fig. 6 (c), the electromagnetic force module 500 includes a coil 510 and a plurality of magnets 520, the plurality of magnets 520 are surrounded on the periphery of the coil 510, the magnetic poles of the same end of each of the magnets 520 are the same in the vertical direction, the coil 510 is located in the intersection area of the magnetic fields generated by the plurality of magnets 520, that is, the coil 510 is located in the magnetic field range generated by each of the magnets 520, the magnetic field of the coil 510 itself can be overlapped with the magnetic field generated by the plurality of magnets 520, and the adjustment range of the electromagnetic force adjusting device on the machining pressure can be effectively increased.
As shown in fig. 6 (d), the electromagnetic force module 500 includes a magnet 520 and a plurality of coils 510, the plurality of coils 510 are enclosed on the periphery of the magnet 520, and after each coil 510 is energized, the magnetic poles at the same end in the vertical direction are the same, that is, the magnetic field direction generated by each coil 510 is the same, each coil 510 is within the magnetic field range generated by the magnet 520, the magnetic field generated by the magnet 520 can be overlapped with the magnetic field generated by each coil 510, and the adjusting range of the electromagnetic force adjusting device on the machining pressure can be effectively increased. It should be noted that, in the present embodiment, a predetermined distance is provided between the adjacent coils 510 to avoid weakening the magnetic field due to too close proximity between the coils 510.
In addition, for the case shown in fig. 7 (c) and (d), the coil 510 or the magnet 520 may be wound with a plurality of turns to increase the number of coils 510 or to make the coils 510 in a larger magnetic field range generated by the magnet 520, so as to increase the magnetic field strength after the magnetic field generated by the coils 510 is superimposed with the magnetic field generated by the magnet 520.
For example, as shown in fig. 7 (e), in the same electromagnetic force module 500, the coil 510 located at the center of the electromagnetic force module 500 is a first coil 510a, the remaining coils 510 are second coils 510b, at least one coil is arranged around the first coil 510a by the magnet 520, the second coils 510b and the magnet 520 are alternately arranged along the radial direction of the first coil 510a, the magnetic poles of the same end in the vertical direction after all the coils 510 are energized, that is, the magnetic fields generated by all the coils 510 are the same, and the magnetic poles of the same end in the vertical direction are the same.
By the arrangement, the first coil electromagnetic body only comprises a plurality of magnets 520, the first coil 510a is surrounded by the magnets 520, the first coil 510a is positioned in the magnetic field range generated by the magnets 520 of each first coil electromagnetic body, the second coil electromagnetic body only comprises a plurality of second coils 510b, the third coil electromagnetic body only comprises a plurality of magnets 520, the second coil 510b is positioned in the magnetic field range generated by the magnets 520 of the first coil electromagnetic body, the second coil 510b is positioned in the magnetic field range generated by the magnets 520 of the second coil electromagnetic body, the second coil 510b is positioned in the radial direction adjacent to the two coils of magnets 520, namely, the first coil 510a and the second coil 510b can be positioned in the magnetic field range generated by the magnets 520 of the first coil electromagnetic body, the second coil 510a can be overlapped with the magnetic field generated by the two coils of the second coil 520, and the pressure of the pressure regulating device can be processed greatly.
In addition, the first coil 510a is disposed at the center of the electromagnetic force module 500, and the first coil electromagnetic body includes only the magnets 520 therein, on one hand, the magnets 520 of the first coil are disposed closer to the first coil 510a along the circumferential direction of the first coil 510a, on the other hand, the magnets 520 of the first coil are disposed closer to the first coil 510a, on the other hand, the first coil 510a is disposed within the magnetic field generated by the plurality of magnets 520, and the distance between the first coil 510a and the magnets 520 can be reduced, so that the first coil 510a is disposed within the region of higher magnetic field strength of the magnets 520, thereby increasing the electromagnetic force between the electromagnetic force modules 500, and on the other hand, compared with the manner in which the magnets 520 are disposed at the center of the electromagnetic force module 500 and the coils 510 are disposed around the magnets 520, the magnets 510 are prevented from being too close to each other, and the magnetic field is weakened.
Further, the magnets 520 and the second coils 510b of adjacent coils are arranged to be staggered in the circumferential direction of the first coils 510a, so that on one hand, the distance between the adjacent second coils 510b in the same coil is increased, the second coils 510b are prevented from influencing each other to weaken the magnetic field, on the other hand, the second coils 510b are circumferentially positioned between the magnets 520 of the adjacent coils, the second coils 510b can be positioned in the magnetic field range generated by the plurality of magnets 520, and the magnetic field intensity after the magnetic field generated by the second coils 510b is overlapped with the magnetic field generated by the magnets 520 is increased.
Or the second coils 510b and the magnets 520 may be alternately arranged in at least one turn in the circumferential direction of the first coils 510a, i.e., the electromagnetic body includes both the coils 510 and the magnets 520. As shown in fig. 7 (f), the first coil electromagnetic body includes only a plurality of magnets 520a, and the plurality of magnets 520a are disposed around the outer circumference of the first coil 510a, the second coil electromagnetic body includes a plurality of magnets 520b and a plurality of second coils 510b, the plurality of magnets 520b and the plurality of second coils 510b are alternately arranged around the circumference of the first coil 510a, the second coils 510b and the magnets 520b in the first coil electromagnetic body are staggered in the circumference of the first coil 510a, so that the magnets 520a and the magnets 520b in the first coil electromagnetic body can jointly surround the second coils 510b in the second coil electromagnetic body, a magnetic field generated by a larger number of magnets 520 can act on the second coils 510b and be superposed with a magnetic field generated by the second coils 510b, thereby increasing electromagnetic force between the electromagnetic force modules 500, and the first coils 510a and the second coils 510b are further apart, so that mutual influence between the coils 510 can be avoided.
It should be noted that, for the embodiment shown in fig. 6 (c), fig. 6 (d), fig. 7 (e), and fig. 7 (f), each ring of electromagnetic bodies is not limited to a circumferential arrangement, a polygonal arrangement, or the like, such as a circumferential arrangement of a ring of electromagnetic bodies, a hexagonal arrangement of a ring of electromagnetic bodies, a pentagonal arrangement of a ring of electromagnetic bodies, or the like.
In an embodiment, as shown in fig. 8, the electromagnetic force module 500 includes a plurality of magnetic units 530, the magnetic units 530 are arranged along a first direction and/or a second direction, the first direction and the second direction are parallel to the middle plane, each magnetic unit 530 includes at least one magnet 520 and a plurality of coils 510 surrounding the periphery of the magnet 520, in each magnetic unit 530, after the coil 510 is energized, the magnetic poles of the same end of the magnet 520 along the vertical direction are the same as the magnetic poles of the magnet 520, the magnetic field direction of the magnet 520 acting on the coil 510 is the same as the magnetic field direction of the coil 510 itself, the magnetic poles of the same end of the magnet 520 along the vertical direction in the magnetic units 530 adjacent along the first direction are opposite, and likewise, the magnetic poles of the same end of the magnet 520 along the vertical direction in the magnetic units 530 adjacent along the second direction are opposite.
On the one hand, the coil 510 is surrounded by a plurality of magnets 520, the magnetic field generated by the coil 510 in each magnetic unit 530 can be overlapped with the magnetic field acted on the coil 510 by the plurality of magnets 520, and the plurality of magnetic units 530 simultaneously provide the magnetic field, so that the electromagnetic force between two electromagnetic force modules 500 can be increased, on the other hand, the distance between the coils 510 with the same magnetic field direction is increased, the mutual influence between the coils 510 is avoided, so that the magnetic field is weakened, the magnets 520 are surrounded on the periphery of the coils 510, the magnets 520 are spaced between the coils 510 in the adjacent magnetic units 530, the magnetic poles of the adjacent magnets 520 in the adjacent magnetic units 530 are opposite in the vertical direction, the magnetic field direction acted on the other magnet 520 by one magnet is the same as the magnetic field direction of the other magnet 520, so that the magnetic fields generated by the adjacent magnets 520 can be overlapped, and the electromagnetic force between the electromagnetic force modules 500 can be further increased.
It should be noted that, each coil 510 has a vertical magnetic pole opposite to that of the nearest coil 510 or magnet 520, and each magnet 520 has a vertical magnetic pole opposite to that of the nearest coil 510 or magnet 520, so that the magnetic field generated by the coil 510 can be superimposed with the magnetic fields generated by the plurality of magnets 520 to maximally enhance the electromagnetic force between the electromagnetic force modules 500.
In addition, the number of the magnets 520 in each magnetic unit 530 is not limited, and each magnetic unit 530 includes four magnets 520 as in the (g) diagram of fig. 8, and each magnetic unit 530 includes five magnets 520 as in the (h) diagram of fig. 8.
It should be noted that, in fig. 6 to fig. 8, "S" and "N" are only used to indicate whether the magnetic poles at the same end in the vertical direction between the coils 510 and 510, between the coils 510 and the magnets 520, or between the magnets 520 and the magnets 520 are identical, and the magnetic poles of the coils 510 and the magnets 520 may be reasonably adjusted according to actual machining conditions.
Referring to fig. 5 and 9, the electromagnetic force module 500 further includes a housing 540, a first mounting cavity 541 and a second mounting cavity 542 are disposed in the housing 540, the magnet 520 is fixed in the first mounting cavity 541, the coil 510 is fixed in the second mounting cavity 542, and the magnet 520 and the coil 510 are assembled in the housing 540, so that the electromagnetic force module 500 is used as an integral structure and applied to a wafer thinning apparatus, and the use is convenient.
As shown in fig. 5, the housing 540 includes a housing 543 and a mounting plate 544, the housing 543 is fastened to one side of the mounting plate 544 in the vertical direction, an inner cavity of the housing 540 is defined between the housing 543 and the mounting plate 544, the mounting plate 544 is embedded in the housing 543, and a threaded fastener is inserted into the housing 543 and the mounting plate 544 along the peripheral side of the housing 543 and locks the housing 543 and the mounting plate 544.
The electromagnetic force module 500 further includes a support 560, the support 560 is mounted on a side of the mounting plate 544 facing the housing 543, a first mounting cavity 541 and a second mounting cavity 542 are defined in the support 560, the first mounting cavity 541 and the second mounting cavity 542 vertically penetrate through each other, a threaded fastener is inserted into the mounting plate 544 on a side of the mounting plate 544 facing away from the housing 543, the iron core 550 is fixed to the mounting plate 544, and the coil 510 is sleeved on the periphery of the iron core 550. The electromagnetic force module 500 further includes a plurality of cover plates 570, at least a portion of the cover plates 570 are located in the first mounting cavity 541, the cover plates 570 are located on one side of the magnet 520 facing away from the mounting plate 544, the periphery of the magnet 520 is limited by the cavity wall of the first mounting cavity 541, and two ends of the magnet 520 are limited by the mounting plate 544 and the cover plates 570 respectively and are fixed in the first mounting cavity 541.
The mounting manner of the cover plate 570 to the first mounting cavity 541 is not limited to clamping, inserting and the like, and illustratively, the inner wall of the first mounting cavity 541 and the cover plate 570 are provided with mutually matched buckles, and the cover plate 570 is clamped in the first mounting cavity 541 and limits the magnet 520.
In addition, the electromagnetic force module 500 further includes a cooling plate 580, the cooling plate 580 is attached to at least one surface of the housing 540 in the vertical direction, the cooling plate 580 is not limited to be a liquid cooling plate, a refrigerating plate, etc., and can provide cooling capacity, heat is generated in the energizing operation process of the coil 510, and is easy to store in the housing 540, so that the electromagnetic force module 500 is high temperature, the working efficiency of the electromagnetic force adjusting device is affected, and the cooling plate 580 is used for cooling the housing 540, so that the electromagnetic force module 500 is kept in a suitable temperature range.
Electromagnetic force module 500 further includes a bottom plate 590, where mounting plate 544, cooling plate 580, and bottom plate 590 may be fastened and secured by threaded fasteners, where cooling plate 580 is located between bottom plate 590 and mounting plate 544, thereby reducing the effects of the external environment on cooling plate 580 and enhancing the overall structural strength of electromagnetic force module 500.
In one embodiment, the cooling plate 580 is located between the bottom plate 590 and the mounting plate 544, and the bottom plates 590 of the two electromagnetic force modules 500 are disposed opposite to each other, so that the two electromagnetic force modules 500 are spaced closer together, thereby enhancing the electromagnetic force between the electromagnetic force adjusting devices.
The invention also provides a wafer thinning processing method which is executed by adopting the wafer thinning processing system, and comprises the following steps:
The wafer is placed on the top of the processing platform 200, the wafer is fixed, the carrying shaft of the base frame 300 is controlled to descend to a preset height, the processing head 400 is contacted with the surface of the wafer at this time, the processing head 400 is controlled to work and thin the wafer, the pressure detection module 620 detects the processing pressure between the processing head 400 and the wafer in the wafer thinning process, the control module 610 sends a control instruction to the power supply 630 according to the processing pressure, and the power supply 630 changes the power supply amount to the electromagnetic force modules 500 according to the control instruction so as to adjust the electromagnetic force between the two electromagnetic force modules 500. The electromagnetic force is regulated by changing the power supply amount of the power supply 630 to the electromagnetic force module 500, so that the response speed is high, the regulation precision is high, the thickness reduction of the wafer can be accurately controlled, and the processing efficiency of the wafer is improved.
The manner of changing the power supply amount of the power supply 630 to the electromagnetic force module 500 may be to change the current amount of the power supply 630 to the electromagnetic force module 500, that is, to reduce the current of the power supply 630 to the coil 510, so as to reduce the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100, and to increase the current of the power supply 630 to the coil 510, so as to increase the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100. Alternatively, the power supply 630 may be changed by cutting off the electrical conduction between the power supply 630 and a part of the coils 510, reducing the number of coils 510 capable of generating a magnetic field, reducing the electromagnetic force applied to the spindle 100 by the electromagnetic force module 500, and increasing the number of coils 510 capable of generating a magnetic field after the electrical conduction between the power supply 630 and the coils 510 is restored, so that the electromagnetic force applied to the spindle 100 by the electromagnetic force module 500 is increased.
In addition, in case that the elastic member 700 is provided between the spindle 100 and the base frame 300, the elastic member 700 can provide an upward elastic force to the spindle 100, after the base frame 300 is controlled to carry the spindle 100 down to a predetermined height, the pressure between the processing head 400 and the wafer is a first pressure F 1, the elastic member 700 has a first compression amount L 1, then the base frame 300 is controlled to carry the spindle 100 up to a predetermined distance, the pressure between the processing head 400 and the wafer is a second pressure F 2, the elastic member 700 has a second compression amount L 2, and F 1＞F2,L1＜L2, and then the processing head 400 is controlled to operate at a second pressure F 2.
In this process, the spindle 100 is carried by the base frame 300 and descends to a predetermined height, an initial pressure F 1 is provided between the processing head 400 and the wafer, the elastic member 700 has an initial compression amount L 1, the initial pressure F 1 is greater than the processing pressure required by the wafer, then the base frame 300 is controlled to retract, the compression amount of the elastic member 700 is controlled to increase, at this time, the pressure between the processing head 400 and the wafer is reduced to F2, the F2 is matched with the processing pressure required by the wafer, and the processing head 400 can be controlled to operate at a second pressure F2. That is, the lifting of the base can change the compression amount of the elastic member 700 to change the elastic force applied by the elastic member 700 to the spindle 100, so that the pressure applied by the processing head 400 to the wafer is within the adjustable range of the electromagnetic force module 500.
Further, the range of the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100 is defined to be 0-F, and the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100 is set to be F/2 when the processing pressure is adjusted to F2 before the wafer is processed by the processing head 400, so that the actual processing pressure can be smaller than F2 or larger than F2 by changing the electromagnetic force applied by the electromagnetic force module 500 to the spindle 100 when the wafer is thinned by the processing head 400, so as to adapt to the situation that the processing pressure of the wafer is too large or too small in the processing process. That is, when the electromagnetic force is adjusted between 0-F/2, the actual machining pressure is smaller than F2, and when the electromagnetic force is adjusted between F/2-F, the actual machining pressure is larger than F2.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of one of ordinary skill in the art without departing from the spirit of the present invention. Furthermore, embodiments of the invention and features of the embodiments may be combined with each other without conflict.
Claims (10)
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