CN119517744B - A plasma treatment method for oxide semiconductor channel thin films - Google Patents
A plasma treatment method for oxide semiconductor channel thin filmsInfo
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- CN119517744B CN119517744B CN202411562920.2A CN202411562920A CN119517744B CN 119517744 B CN119517744 B CN 119517744B CN 202411562920 A CN202411562920 A CN 202411562920A CN 119517744 B CN119517744 B CN 119517744B
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
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Abstract
The invention provides a plasma processing method of an oxide semiconductor channel film, which comprises the steps of preparing an amorphous oxide semiconductor channel film on a substrate to obtain an amorphous oxide semiconductor sample containing the channel film, placing the sample into a reaction cavity of plasma equipment, vacuumizing the reaction cavity, introducing reaction gas and auxiliary gas into the reaction cavity after vacuumizing, performing first adjustment on input power and gas partial pressure of the plasma equipment to excite the reaction gas to glow in the reaction cavity so as to generate plasma, and performing second adjustment on the input power and the gas partial pressure of the plasma equipment within a preset first time threshold so as to change the density and energy of the plasma, thereby realizing the plasma processing of the amorphous oxide semiconductor channel film in the reaction cavity. The method utilizes oxygen exchange between oxygen plasma and the oxygen-containing amorphous oxide semiconductor film to reduce the hydrogen concentration in the channel and improve the quality of the amorphous oxide semiconductor channel.
Description
Technical Field
The invention relates to the technical field of plasmas and semiconductors, in particular to a plasma treatment method of an oxide semiconductor channel film.
Background
Amorphous Oxide Semiconductors (AOS), such as amorphous indium gallium zinc oxide (a-IGZO), have important applications in the field of Thin Film Transistors (TFTs) because of their excellent electron mobility and low process temperatures. However, at present, hydrogen as an impurity is inevitably introduced into the AOS film during the production process, which has a multiple effect on the device performance. The low concentration of hydrogen atoms can passivate interface defects, reduce subthreshold swing and improve TFT characteristics, however, as the hydrogen concentration increases, the negative bias stability of the thin film transistor is affected, resulting in threshold voltage drift and subthreshold swing increase.
In order to solve the problems, different post-treatment methods such as room temperature hydrogen plasma treatment and high temperature H 2 annealing are adopted in the prior art. These treatments allow hydrogen as a dopant, increase carrier concentration, improve device performance, but raise device reliability issues, especially high temperature stability (> 400 ℃). Therefore, reducing the hydrogen concentration in the AOS film as much as possible is an effective method to improve the long-term reliability of the device.
Disclosure of Invention
First, the technical problem to be solved
In view of the above-mentioned shortcomings, a primary object of the present invention is to provide a plasma treatment method for an oxide semiconductor channel film, which utilizes the oxygen exchange phenomenon between oxygen plasma and an oxygen-containing amorphous oxide semiconductor film to realize the out-diffusion of hydrogen atoms, reduce the hydrogen concentration in the channel and improve the quality of the amorphous oxide semiconductor channel.
(II) technical scheme
The invention provides a plasma treatment method of an oxide semiconductor channel film, which comprises the steps of preparing an amorphous oxide semiconductor channel film on a substrate to obtain an amorphous oxide semiconductor sample containing the channel film, placing the amorphous oxide semiconductor sample containing the channel film into a reaction cavity of plasma equipment, vacuumizing the reaction cavity, introducing reaction gas and auxiliary gas into the vacuumized reaction cavity, adjusting the input power and the gas partial pressure of the plasma equipment for the first time to excite the reaction gas to generate plasma in the reaction cavity, and adjusting the input power and the gas partial pressure of the plasma equipment for the second time to change the density and the energy of the plasma within a preset first time threshold value, so as to realize the plasma treatment of the amorphous oxide semiconductor channel film in the reaction cavity.
In the above scheme, the reaction gas is oxygen, and the auxiliary gas is one or more of nitrogen and inert gas.
In the scheme, the input power and the partial pressure of the gas of the plasma equipment are adjusted for the first time to excite the reaction gas to glow in the reaction cavity to generate plasma, and the method comprises the step of exciting the oxygen to glow to generate oxygen plasma by adjusting the input power and the partial pressure of the oxygen of the plasma equipment for the first time.
In the scheme, the input power and the partial pressure of the gas of the plasma equipment are adjusted for the second time to change the density and the energy of the plasma, and the plasma treatment of the amorphous oxide semiconductor channel film is realized in the reaction cavity, and the method comprises the steps of changing the density and the energy of the oxygen plasma by adjusting the input power and the partial pressure of the oxygen of the plasma equipment for the second time to obtain an oxygen-containing plasma environment; based on the oxygen-containing plasma environment, the plasma treatment of the amorphous oxide semiconductor channel film is realized by oxygen exchange between oxygen plasma and the oxygen-containing amorphous oxide semiconductor film.
In the above scheme, the plasma is generated by excitation, and the excitation method comprises microwave excitation plasma, inductive coupling excitation plasma, cyclotron resonance excitation plasma and radio frequency excitation plasma.
In the scheme, the density and the energy of the oxygen plasma are changed by adjusting the input power and the oxygen partial pressure of the plasma equipment for the second time, so that the oxygen-containing plasma environment is obtained, and the method comprises the step of changing the ratio of the density of the oxygen plasma to oxygen exchange by adjusting the oxygen partial pressure.
In the scheme, the oxygen is excited to start to generate oxygen plasma, wherein excited species of the oxygen plasma comprise molecules, atoms and ions.
In the above scheme, the amorphous oxide semiconductor channel film is prepared on the substrate by deposition or sputtering.
In the above scheme, the substrate is a material which does not react with the oxide semiconductor, and the substrate material comprises silicon, silicon carbide, silicon on an insulating substrate, glass and sapphire.
In the above scheme, the material of the amorphous oxide semiconductor film includes indium gallium zinc oxide, indium gallium oxide, zinc oxide and indium tin oxide.
(III) beneficial effects
The technical scheme of the embodiment of the invention has at least the following beneficial effects:
(1) The amorphous oxide semiconductor channel can be regarded as a dynamic exchange network based on the oxygen exchange phenomenon between oxygen plasma and the oxygen-containing amorphous oxide semiconductor film by adopting plasma for treatment, which is beneficial to the diffusion of hydrogen atoms out of the channel and reduces the hydrogen defect of the channel.
(2) The oxygen-containing plasma is adopted for treatment, which is different from the traditional thought of realizing atomic diffusion by using heat energy, and avoids the damage of high temperature to a channel.
(3) The oxygen-containing plasma is adopted for treatment, and no exogenous atom is introduced into the oxide semiconductor channel, so that the introduction of new defects is avoided.
Drawings
Fig. 1 shows a flowchart of a plasma treatment method of an oxide semiconductor channel film according to an embodiment of the present invention;
FIG. 2 schematically illustrates a process diagram for treating an oxide semiconductor channel film with 18 O plasma in accordance with an embodiment of the present invention;
FIG. 3 schematically illustrates a graph of the secondary ion mass spectrum characterization of oxygen intensity in a channel film before and after 18 O plasma treatment, in accordance with an embodiment of the present invention;
FIG. 4 schematically illustrates a graph of the secondary ion mass spectrum characterization of hydrogen intensity in a channel film before and after 18 O plasma treatment, in accordance with an embodiment of the present invention;
fig. 5 schematically illustrates a block diagram of an IGZO bottom gate TFT device according to an embodiment of the present invention;
Fig. 6 schematically illustrates a threshold voltage stability variation diagram of an oxide semiconductor device after oxygen plasma treatment according to an embodiment of the present invention.
Detailed Description
The present invention will be further described in detail below with reference to specific embodiments and with reference to the accompanying drawings, in order to make the objects, technical solutions and advantages of the present invention more apparent.
Fig. 1 shows a flowchart of a plasma treatment method of an oxide semiconductor channel film according to an embodiment of the present invention.
As shown in FIG. 1, the plasma treatment method of the oxide semiconductor channel film specifically includes operations S1 to S5.
In operation S1, an amorphous oxide semiconductor channel film is prepared on a substrate, and an amorphous oxide semiconductor sample including the channel film is obtained.
In the embodiment of the invention, an amorphous oxide semiconductor channel film can be prepared on a substrate by deposition, sputtering or the like, so that an amorphous oxide semiconductor sample containing the channel film is obtained.
Illustratively, the substrate is a material that does not react with the oxide semiconductor, for example, the substrate material may be silicon, silicon carbide, silicon on an insulating substrate, glass, sapphire, or the like.
The material of the amorphous oxide semiconductor film may be, for example, indium gallium zinc oxide, indium gallium oxide, zinc oxide, indium tin oxide, or the like.
In operation S2, an amorphous oxide semiconductor sample including a channel thin film is placed in a reaction chamber of a plasma apparatus, and the reaction chamber is subjected to a vacuum pumping process.
In operation S3, the reaction chamber after the vacuum pumping is filled with the reaction gas and the auxiliary gas.
Specifically, after the operation S1 is completed, the generated amorphous oxide semiconductor channel film is placed in a reaction chamber, the reaction chamber is subjected to vacuum pumping treatment, and then, reaction gas and auxiliary gas are introduced.
Illustratively, the reactant gas is oxygen and the auxiliary gas is one or more of nitrogen and an inert gas.
In operation S4, the input power and the partial pressure of the gas of the plasma apparatus are first adjusted to excite the reaction gas in the reaction chamber to ignite and generate plasma.
Specifically, the input power and the partial pressure of oxygen of the plasma equipment are adjusted for the first time, so that oxygen is excited to start to generate oxygen plasma, and the starting process is completed. The plasma is generated by excitation, and the excitation method includes microwave excitation plasma, inductive coupling excitation plasma, cyclotron resonance excitation plasma, radio frequency excitation plasma and the like.
The oxygen plasma is generated by exciting oxygen to ignite, wherein the excited species of the oxygen plasma include molecules, atoms, ions and the like, and the reduction of the channel hydrogen concentration can be realized.
According to the embodiment of the invention, the oxygen-containing plasma is adopted for treatment, which is different from the traditional thought of realizing atomic diffusion by using heat energy, and avoids the damage of high temperature to a channel. The oxygen-containing plasma is adopted for treatment, and no exogenous atom is introduced into the oxide semiconductor channel, so that the introduction of new defects is avoided.
In operation S5, the input power and the partial pressure of the gas of the plasma apparatus are adjusted for the second time within a preset first time threshold to change the density and energy of the plasma, and the plasma treatment of the amorphous oxide semiconductor channel thin film is performed in the reaction chamber.
In the embodiment of the invention, the plasma treatment of the amorphous oxide semiconductor channel film is performed by adjusting parameter variables such as the input power, the gas partial pressure, the preset treatment time threshold value and the like of the plasma equipment.
Specifically, the input power and the partial pressure of gas of the plasma equipment are adjusted for the second time within a preset first time threshold value, such as 3 minutes and 12 minutes, so as to change the density and the energy of the plasma, and the plasma post-treatment of the amorphous oxide semiconductor channel film is realized, wherein the method comprises the steps of changing the density and the energy of oxygen plasma through the second time adjustment of the input power and the partial pressure of oxygen of the plasma equipment to obtain an oxygen-containing plasma environment, and carrying out oxygen exchange between the oxygen plasma and the oxygen-containing amorphous oxide semiconductor film based on the oxygen-containing plasma environment so as to realize the plasma treatment of the amorphous oxide semiconductor channel film.
In an embodiment of the invention, the ratio of the density of the oxygen plasma to the oxygen exchange is varied by adjusting the partial pressure of oxygen.
According to the embodiment of the invention, the plasma is adopted for treatment, and based on the oxygen exchange phenomenon between the oxygen plasma and the oxygen-containing amorphous oxide semiconductor film, the amorphous oxide semiconductor channel film can be regarded as a dynamic exchange network, which is beneficial to the diffusion of hydrogen atoms to the outside of the channel and reduces the hydrogen defects of the channel.
Based on the above-mentioned plasma processing method of oxide semiconductor channel film, an embodiment of the invention is provided. In this embodiment, dynamic atomic exchange is achieved with high energy of atoms in an oxygen plasma environment to achieve a reduction in hydrogen content in the AOS film. Solves the problems of diffusion and doping atom passivation hydrogen defect in the traditional heat treatment, and provides a new method for improving the quality of the oxide semiconductor channel film in the process.
An exemplary method includes preparing an Indium Gallium Zinc Oxide (IGZO) film of 40 minutes on the surface of a silicon oxide (SiO 2/Si) sample on a substrate silicon by sputtering, wherein the IGZO is usually used as a channel material to obtain a channel film of the IGZO/SiO 2/Si sample, placing the IGZO/SiO 2/Si sample containing the channel film in a microwave plasma oxidation cavity, vacuumizing the cavity to reach the range of <10 -4 Pa, introducing isotope oxygen 18O2 into the vacuumized cavity, keeping the air pressure at 1kPa, and after stopping ventilation, setting the microwave input power of a microwave plasma generating device to 600W for the first time, and exciting the isotope oxygen to start glow by microwaves to form 18 O plasma.
Further, the microwave input power and the reaction gas pressure of the microwave plasma generating device are adjusted for the second time, so that the energy and the density of 18 O plasma are changed. And carrying out post-treatment on the IGZO/SiO 2/Si sample by utilizing 18 O plasma, wherein the post-treatment time is 12 minutes, and after the post-treatment is finished, closing the microwave input power to stop introducing the isotope oxygen.
Further, secondary ion mass spectrometry characterization was performed on IGZO/SiO 2/Si samples with and without microwave plasma post-treatment. That is, in order to verify whether the amorphous oxide semiconductor thin film after plasma treatment in the above-described embodiment realizes oxygen exchange, a specific description will be given below.
This embodiment uses 18O2 isotope instead of conventional 16O2 as an example, and as shown in fig. 2, fig. 2 schematically shows a process diagram of treating an oxide semiconductor channel film with 18 O plasma according to an embodiment of the present invention. Preparing an indium gallium zinc oxide (IGZ 16 O) film on the surface of a silicon oxide (Si 16O2/Si) sample on substrate silicon by sputtering, then placing a IGZ 16O/ Si16O2/Si sample in a microwave plasma oxidation cavity, vacuumizing the cavity to reach the vacuum range of less than 10 -4 Pa, introducing isotope oxygen 18O2 into the vacuumized cavity at the air pressure of 1kPa, and after stopping ventilation, setting the microwave input power of a microwave plasma generating device to 600W for the first time, and exciting the isotope oxygen to glow by microwaves to form 18 O plasma. Further, the microwave input power and the reaction gas pressure of the microwave plasma generating device are adjusted for the second time, so that the energy and the density of 18 O plasma are changed. And carrying out post-treatment on the IGZ 16O/ Si16O2/Si sample by utilizing 18 O plasma for 12 minutes to obtain IGZ 16,18O/ Si16O2/Si, and stopping introducing isotope oxygen after the microwave input power is closed.
Fig. 3 schematically shows a graph of the secondary ion mass spectrum characterization of oxygen intensity in a channel film before and after 18 O plasma treatment, according to an embodiment of the invention.
As shown in FIG. 3, the intensity of 18 O in the IGZO film is almost 0 without the microwave plasma treatment, and the intensity distribution of 16 O is uniform, so that almost no 18 O in the IGZO film is formed by 16 O, and the intensity of 18 O in the upper surface area of the IGZO film is obviously increased and the intensity of 16 O is obviously reduced after the microwave plasma treatment. Therefore, as shown in fig. 3, oxygen exchange occurs in the IGZO thin film from the upper surface toward the lower interface direction during the microwave plasma treatment.
Fig. 4 schematically shows a graph of the secondary ion mass spectrum characterization of the hydrogen intensity in a channel film before and after 18 O plasma treatment, according to an embodiment of the invention.
As shown in fig. 4, the intensity of hydrogen after the microwave plasma post-treatment is changed, and it can be seen that the intensity of OH ions or H ions in the IGZO film is reduced after the plasma treatment, and it is also proved that the plasma treatment is favorable for the outdiffusion of hydrogen atoms and reduces the hydrogen concentration in the channel. In this example, the temperature at the time of the microwave plasma post-treatment was <300 ℃, which is far lower than the temperature required for the high-temperature annealing.
Based on the above-described plasma treatment method of the oxide semiconductor channel film, another embodiment is proposed.
An exemplary method includes preparing an Indium Gallium Zinc Oxide (IGZO) film of 40 minutes on the surface of a silicon oxide (SiO 2/Si) sample on a substrate silicon by sputtering, wherein the IGZO is usually used as a channel material to obtain a channel film of the IGZO/SiO 2/Si sample, placing the IGZO/SiO 2/Si sample containing the channel film in a microwave plasma oxidation cavity, vacuumizing the cavity to reach the range of <10 -4 Pa, introducing oxygen into the vacuumized cavity, keeping the air pressure at 1kPa, and after stopping ventilation, setting the microwave input power of a microwave plasma generating device to 600W for the first time, and exciting isotope oxygen to glow by microwaves to form oxygen plasma.
Further, the microwave input power and the reaction gas pressure of the microwave plasma generating device are adjusted for the second time, so that the energy and the density of oxygen plasma are changed. And (3) performing post-treatment on the IGZO/SiO 2/Si sample by using oxygen plasma, wherein the post-treatment time is 3 minutes, and after the post-treatment is finished, closing the microwave input power to stop introducing oxygen.
In an embodiment of the invention, positive and negative bias threshold stability tests were performed on IGZO/SiO 2/Si samples with and without microwave plasma post-treatment while sputtering Indium Tin Oxide (ITO) electrodes.
Fig. 5 schematically illustrates a block diagram of an IGZO bottom gate TFT device according to an embodiment of the present invention. Fig. 6 schematically illustrates a threshold voltage stability variation diagram of an oxide semiconductor device after oxygen plasma treatment according to an embodiment of the present invention.
As shown in fig. 5, indium Tin Oxide (ITO) electrodes were sputtered on the IGZO/SiO 2/Si samples with and without the microwave plasma post-treatment, respectively, to obtain bottom gate TFT devices. And respectively carrying out positive bias voltage and negative bias voltage threshold stability tests on the bottom gate TFT device subjected to microwave plasma post treatment and the bottom gate TFT device not subjected to microwave plasma post treatment.
As shown in fig. 6, the shift amount of the threshold voltage of the bottom gate TFT device after the microwave plasma treatment is significantly reduced, and it can be seen that the microwave plasma treatment reduces the hydrogen concentration in the channel and improves the quality of the amorphous oxide semiconductor channel.
According to the embodiment of the invention, the oxygen exchange phenomenon between the oxygen plasma and the oxygen-containing amorphous oxide semiconductor film is utilized to promote the diffusion of hydrogen atoms out of a channel and reduce the hydrogen defect of the channel. In addition, the embodiment of the invention breaks through the conventional mode of removing hydrogen atoms, avoids the new defects caused by high temperature and foreign atom introduction, and meets the requirement of low temperature in the industry.
It will be understood by those skilled in the art that while the present invention has been shown and described with reference to particular exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims and their equivalents. The scope of the invention should, therefore, be determined not with reference to the above-described embodiments, but instead should be determined with reference to the appended claims, along with the full scope of equivalents to which such claims are entitled.
The foregoing embodiments have been provided for the purpose of illustrating the general principles of the present invention, and are more fully described herein with reference to the accompanying drawings, in which the principles of the present invention are shown and described, and in which the general principles of the invention are defined by the appended claims.
Claims (9)
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| CN102496577A (en) * | 2005-09-06 | 2012-06-13 | 佳能株式会社 | Method for manufacturing amorphous oxide film |
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| US8187919B2 (en) * | 2008-10-08 | 2012-05-29 | Lg Display Co. Ltd. | Oxide thin film transistor and method of fabricating the same |
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| JP2012146956A (en) * | 2010-12-20 | 2012-08-02 | Canon Inc | Channel-etch type thin film transistor and method of manufacturing the same |
| JP5740270B2 (en) * | 2011-09-27 | 2015-06-24 | 株式会社東芝 | THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE |
| FR2984595B1 (en) * | 2011-12-20 | 2014-02-14 | Centre Nat Rech Scient | METHOD FOR MANUFACTURING A MOS STACK ON A DIAMOND SUBSTRATE |
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