CN119413840A - A method and system for analyzing the causes of current-induced thermal defects in metal fittings in regional structures and for closed-loop processing - Google Patents
A method and system for analyzing the causes of current-induced thermal defects in metal fittings in regional structures and for closed-loop processing Download PDFInfo
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Abstract
本发明公开了一种区域结构内金具电流致热缺陷成因分析及闭环处理方法及系统，涉及金具缺陷巡检技术领域，通过前端处理模块收集待处理结构构成信息与负荷信息，随后缺陷分析模块开展初步检查及试验，利用多种检测设备从多方面检测结构状况，并依结构位置开展特定带电试验，接着进行仿真和试验为基础的成因分析，全面排查显性缺陷及分析成因。策略决算模块则制定缺陷闭环处理方案并赋图谱库，包括建立缺陷类型子集、分解结构特征并录入数据、给出热缺陷分类图谱库及相关操作指南，图谱库通过对比热像图特征向量判断缺陷类型。
The present invention discloses a method and system for analyzing the causes of thermal defects caused by electric current in metal fittings in regional structures and closed-loop processing, which relates to the field of metal fitting defect inspection technology. The front-end processing module collects the structural composition information and load information to be processed, and then the defect analysis module conducts preliminary inspections and tests, uses a variety of detection equipment to detect the structural conditions from multiple aspects, and conducts specific live tests according to the structural position, and then conducts simulation and test-based cause analysis to comprehensively check for explicit defects and analyze the causes. The strategy settlement module formulates a defect closed-loop processing plan and assigns a map library, including establishing a defect type subset, decomposing structural features and entering data, and providing a thermal defect classification map library and related operation guidelines. The map library determines the defect type by comparing the thermal image feature vector.
Description
Technical Field
The invention relates to the technical field of hardware defect inspection, in particular to a hardware current induced thermal defect cause analysis and closed loop processing method and system in a regional structure.
Background
According to the test period required by the preventive test procedure or the state maintenance procedure, the electric primary equipment in the operation of the transformer substation needs to carry out infrared routine inspection or diagnostic temperature measurement according to the period or according to the on-the-road condition, including the load condition, the equipment structure, the operation season and the like. The current-induced thermal defect is used as the most common thermal defect type of the transformer substation, and has the characteristics of wide distribution range, common defect occurrence, obvious hot spot temperature change along with load, difficult analysis of complex structure causes and the like. In general, due to unplanned power outages, conventional defects tend to be easily diagnosed but difficult to handle, and complex structure current-induced thermal defects sometimes present a fault-like transition condition that makes it difficult to identify a true fault point.
The infrared imager is used as a mature thermal defect identification device, is widely applied to a power system, is used as routine test and inspection items, and has corresponding specification and technical guidance in a plurality of regulations. However, because the standard guidance is not clear, the problems of incapability of result identification or error poor identification and the like depending on the defect are often caused by the reasons of difficult analysis of the complicated defect cause, less research of the complicated defect cause, no close of the personnel accurate measurement technology, map reading deviation and the like, and the follow-up management is not standard, so that the requirements of the thermal defect cause analysis and defect treatment standard of the transformer substation hardware cannot be met.
In view of this, it is necessary to provide a method for analyzing and processing the cause of the current-induced thermal defect of a hardware fitting in a typical area structure of a transformer substation, which is used for standardizing the conventional and problematic current-induced thermal defect identification flow of the transformer substation, and defining a defect checking method, so as to improve the correctness and accuracy of the heat defect cause analysis and equipment fault diagnosis, guide the establishment of a map library and a defect closed-loop management flow, and lay a foundation for the establishment of the current-induced thermal defect map library of the transformer substation.
Disclosure of Invention
The invention aims to provide a cause analysis and closed-loop processing method and system for a hardware current heating defect in a typical area structure of a transformer substation, wherein the structure with the current heating defect is marked as a defect structure to be processed, and the cause analysis and closed-loop processing method is carried out on the structure to be processed, namely, cause analysis and defect closed-loop management are carried out in the defect analysis process of the structure to be processed.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a hardware fitting current induced thermal defect cause analysis and closed loop processing method in a regional structure comprises the following steps:
S1, collecting structure information to be processed;
S2, carrying out preliminary examination and test of the structure to be processed;
s3, performing cause analysis based on simulation and test;
And S4, making a defect closed-loop processing scheme and assigning a map library.
The method comprises the steps of S1, collecting structural information to be processed, wherein the structural information to be processed comprises structural information to be processed and structural load information to be processed, the structural information to be processed comprises metal structural components, insulating structural components and component materials, and the structural load information to be processed comprises voltage, current and a maximum load time period;
step S2, carrying out preliminary examination and test on the structure to be processed, and specifically comprising the following steps:
S21, on-site electrified inspection and diagnostic test, which comprises the following specific steps:
S211, carrying out multi-angle and multi-period infrared thermal image precise measurement on a structure to be processed by adopting an infrared thermal imager, and obtaining a thermal image of the surface temperature distribution of the structure;
S212, detecting whether an ultraviolet light signal generated by partial discharge exists in a structure to be processed by using ultraviolet imaging detection equipment, and recording the signal intensity and the position;
s213, analyzing a main loop load curve to evaluate a load change rule of a structure to be processed, and comparing the load change rule with historical data to judge whether abnormal fluctuation exists;
s214, carrying out comprehensive part missing, loosening, dislocation, burning out, rust, damage, crack and slip inspection on the structure, and recording the found problems and positions in detail;
S22, specific other electrified test steps performed according to the position of the structure to be processed are as follows:
S221, if the structure to be processed of the GIS nearby part is the GIS nearby part, after referring to GIS ultrahigh frequency and ultrasonic partial discharge live detection historical data, performing GIS ultrahigh frequency and ultrasonic partial discharge live detection by adopting high-precision ultrahigh frequency and ultrasonic partial discharge detection equipment according to preset detection paths and parameter settings;
S222, if the structure to be processed near the transformer is the structure to be processed, firstly consulting the ultra-high frequency and ultrasonic partial discharge live detection historical data of the transformer, then carrying out GIS ultra-high frequency and ultrasonic partial discharge live detection, consulting the iron core grounding current on-line monitoring historical data, and then carrying out iron core grounding current live test by using a professional iron core grounding current test instrument;
S223, if the structure is to be processed nearby the lightning arrester, referring to the lightning arrester resistive current detection historical data and the alternating current withstand voltage test data, and carrying out lightning arrester resistive current live detection by using special lightning arrester resistive current live detection equipment;
s224, if an obvious grounding point exists near the structure to be processed, conducting detection of the grounding down conductor is carried out by adopting a high-precision grounding resistance tester, and the grounding resistance value and the conducting condition are recorded;
step S3, performing simulation and test-based cause analysis, including the following steps:
S31, checking a structure to be processed and gradually checking for dominant defects, wherein the detailed steps are as follows:
S311, after the structure to be processed is disassembled, checking the appearance of each constituent hardware fitting by adopting a magnifying glass, and photographing, marking and recording the type, position and severity of the defects under the conditions of rust, crack and manufacturability defects;
S312, establishing a circuit topology model of a structure to be processed, measuring electrical parameters of each component, recording the electrical parameters in a system, and recording and inputting a simulation analysis device of the current heating defect, wherein the simulation analysis device of the current heating defect comprises a central thermal imaging characteristic recording device and an infrared imager;
S313, carrying out circuit simulation according to the circuit topology model, the load state and the structure state of the processing structure, and calculating the power change curves of the equivalent resistors;
S314, when the hardware fitting with the coating is used for checking the coating, a hydrophobicity detecting instrument is adopted for carrying out hydrophobicity test, a pollution degree measuring device is used for carrying out pollution degree test and checking discharge traces, and detection data and results are recorded;
S315, operating in different states defining the structure to be processed:
S3151, under JGZT < 1 >, sampling rust spots and clean hardware parts, conveying the samples to metallographic analysis and recording metallographic structure results;
s3152, in JGZT state, using torsion tester to detect torsion of each bolt, and recording torsion value;
s3153, repeating the operation of S3152 and recording data in JGZT state;
S3154, repeating the operation of S3152 again and recording data in JGZT' S4 state;
s3155, in JGZT states, respectively measuring the branch resistance value of each branch contained in the circuit topology model of the structure to be processed by adopting a resistance measuring instrument, and recording the resistance value;
s3156, repeating the operation of S3155 and recording data in JGZT' S2 state;
s3157, repeating the operation of S3155 and recording data in JGZT state;
S3158, repeating the operation of S3155 and recording data in JGZT to a state;
S32, the heating simulation experiment of the structure to be processed comprises the following steps:
s321: JGZT2 state structure to be processed heating simulation experiment:
S3211, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
S3212, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3213, under JGZT, comprehensively setting current and voltage according to actual operation parameters of the structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
s322: JGZT3 state structure to be processed heating simulation experiment:
S3221, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3222, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3223, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
S323: JGZT4 state structure to be processed heating simulation experiment:
s3231, connecting a structure to be processed to a special heating simulation test device in JGZT < 4 >, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3232, under JGZT4 state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out heating simulation test and recording temperature distribution condition;
s3233, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
the specific contents of the different states of the defined structure to be processed are as follows:
JGZT1, a ground placement state;
JGZT2, clamping two ends by an analog analysis device of the current heating defect and tensioning to 70% of an installation standard tension value;
JGZT3, clamping two ends by an analog analysis device of the current heating defect and tensioning to 100% of an installation standard tension value;
JGZT4, clamping two ends by an analog analysis device of the current heating defect and tensioning to 130% of an installation standard tension value;
JGZT5, clamping two ends by a simulation analysis device of the current induced thermal defect, tensioning to 100% of an installation standard tension value, and setting artificial defects, including adjusting the torsion of a bolt in a structure, polishing rust parts and padding insulating pads in gaps of the structure;
Step S4, a defect closed-loop processing scheme is formulated, and a map library is specifically formed by:
S41, establishing a defect type subset, which comprises the following specific steps:
s411, comprehensively analyzing the detection, simulation and test results obtained in the step S3 to obtain a cause conclusion about the current-induced thermal defect of the structure to be processed, wherein the cause conclusion comprises a direct cause, an indirect cause and related influence factors of the defect;
s412, establishing a new defect type subset or inducing the new defect type subset into an existing defect type subset according to the data entry specification of the defect type library of the simulation analysis device to ensure that the conclusion data can be effectively called and referenced in the follow-up defect analysis and processing;
s42, decomposing the structural features and structural members of the structure to be processed, and counting the steps of the system, wherein the steps are as follows:
S421, for a typical area structure in a transformer substation, specific model, specification and quantity information of insulating equipment, flow-bearing hardware and non-flow-bearing hardware contained in a decomposition area comprise insulators, connecting hardware, strain clamps, drainage clamps and wires;
S422, in a simulation analysis device of typical current-induced thermal defects, setting the spatial relationship of structural members of each type of structure to be processed according to the division of defect type subsets and accurately describing the spatial relationship;
S423, in a typical simulation analysis device for current-induced thermal defects, setting state parameters of structural members of each type of structure to be processed according to the division of defect type subsets, wherein the simulation analysis device specifically comprises:
S4231, inputting detailed record data of the appearance inspection in the steps S2 and S3, including information such as defect position, type and size when the appearance inspection result is recorded;
s4232, inputting metallographic structure images, component analysis data and the like obtained by metallographic analysis in the step S3 when metallographic analysis results are recorded;
S4233, inputting the branch resistance value data measured in different states in the step S3 when the branch resistance test result is recorded;
S4234, when the central thermal image position is recorded, determining the central thermal image position coordinates by analyzing the thermal image diagrams in the steps S2 and S3 and recording;
S4235, when the central thermal image map feature is recorded, corresponding thermal image map feature data are recorded according to classification, and the method specifically comprises the steps of connecting electrical equipment with a metal part, connecting the metal part with the metal part, connecting a metal wire with a disconnecting switch, connecting the metal part with a current transformer, connecting a capacitor joint with a reactor, and connecting the capacitor joint with a capacitor, wherein the capacitor joint comprises an iron core, a winding and a transformer, and the transformer comprises a box body, the iron core and the winding;
S4236, when the thermal image transfer process under the variable load is recorded, according to the heating simulation experiment data of the structure to be processed in the step S32, concretely, whether the structure to be processed has the most hot spot transfer phenomenon or not in various states, if the most hot spot transfer phenomenon exists, whether the hot spot is consistent with the actual fault point or not, and recording relevant data and analysis results;
S4237, when the corresponding relation between the actual fault and the fault appearance is recorded, and under the condition that the fault appearance transfer is definitely existed, namely, when the situation that the actual fault point is inconsistent with the hottest point of the structure to be processed exists, a layering classification method is adopted, the corresponding relation between the actual fault point and the hottest point under different working conditions, namely, under different loads is definitely existed, and data is recorded;
s43, providing a typical classification map library of the thermal defects of the structure to be processed, wherein the steps are as follows:
S431, acquiring a typical thermal image of a structure to be processed under each condition according to a cause analysis conclusion, namely, the position of a fault point, whether the hottest point has a transfer and transfer process or not and the hottest point temperature change under the grading load;
S432, forming a classification map library from the collected thermal image according to the classification standards of fault types and structure types, establishing a one-to-one correspondence between the thermal image and fault points, and storing the map library in a database system which can be conveniently inquired and called so as to guide the rapid identification of similar defect causes;
S44, providing a technical parameter setting guide of a thermal infrared imager and a precision measurement skill guide of a structure to be processed, wherein the steps are as follows:
S441, according to the construction information of the structure to be processed, the environment information of the structure to be processed and the experience information in the cause analysis and research process, a precision measurement skill classification guide of the structure to be processed is provided by comparing the material temperature and temperature rise limit theoretical value of the high-voltage equipment with the common material emissivity reference value;
S442, according to the structure formation information to be processed, the structure environment information to be processed and the experience information in the cause analysis research process, comparing with the common infrared thermal imager equipment model, giving out a thermal imager technical parameter setting guide, including recommended values of parameters such as image resolution, temperature measurement range, emissivity setting and the like, so that an operator can accurately set the infrared thermal imager parameters according to the specific conditions of the structure to be processed;
the heating simulation test simulates a load state of a structure to be processed through a large current generating device and a high voltage generating device, adjusts tension of the structure to be processed, adjusts torsion of bolts in the structure, polishes rusted parts, and fills insulating pads in gaps of the structure to simulate different structure states by adjusting tension of the test device, and develops a test under the condition of JGZT-1 in the condition of FHZT-3, wherein the condition of FHZT-3 is specifically as follows:
FHZT1 state 50% rated load, 2 hours of run time;
FHZT2 state 120% rated load, 2 hours of run time;
FHZT3 state-actual load curve over failure time, run time 2 hours, including peak load.
A hardware fitting current heating defect cause analysis and closed loop processing system in a regional structure comprises a front end processing module, a defect analysis module and a strategy decision module, and is characterized in that the system executes steps for realizing the method of any one of claims 1 to 7, the front end processing module comprises an information input module, the information input module inputs structure composition information to be processed and structure load information to be processed, the defect analysis module comprises a local server, a central data processing module and a typical current heating simulation analysis device, and the typical current heating simulation analysis device specifically comprises a central thermal imaging characteristic recording device and an infrared imager.
The strategy decision module comprises a fine measurement skill guide and a thermal infrared imager technical parameter setting guide which are obtained from the defect analysis module, and a typical current heating defect map library.
The comparison method of the typical current-induced thermal defect map library comprises the following steps:
For a newly acquired thermal image, after the thermal image is converted into a matrix form, the GLCM characteristics of the gray level co-occurrence matrix are extracted, and the contrast C and the correlation R can be extracted from the gray level co-occurrence matrix, wherein the formula is as follows:
Wherein G is gray level, P is gray level co-occurrence matrix, P ij represents pixel points with gray values of i and j, ,,,The mean value and standard deviation corresponding to the gray values i and j are respectively;
Constructing a feature vector F= [ C, R ] of the thermal image;
When comparing the similarity S of the two thermal images F, the formula is as follows:
wherein, F 1 is a newly acquired thermal image feature vector, F 2 is a thermal image feature vector of a typical current-induced thermal defect map library, and the closer the similarity value is 1, the more similar the two thermal images are, the more similar the current-induced thermal defect types may be.
The hardware fitting current heating defect cause analysis and closed loop processing system and method in the regional structure collect the composition information and the load information of the structure to be processed through the information input module of the front end processing module, and provide basic data for subsequent analysis. The defect analysis module performs initial inspection and test on the structure to be processed, detects the surface temperature distribution, partial discharge condition, load change rule, physical structural integrity and the like of the structure from different angles by utilizing various detection equipment such as an infrared thermal imager, an ultraviolet imaging detection equipment and the like, performs specific electrification test according to the position of the structure, performs simulation and test-based cause analysis, establishes a circuit topology model, combines actual load and structure state to perform circuit simulation, calculates an equivalent resistance power change curve, performs operations such as disassembly inspection, electrical parameter measurement, heating simulation test and the like on the structure under different definition states, and comprehensively checks dominant defects and deeply analyzes the causes. And the strategy calculation module establishes a defect closed-loop processing scheme and assigns a map library according to the result obtained by the defect analysis module, and comprises the steps of establishing a defect type subset, decomposing structural constituent features and structural members, inputting related data, providing a thermal defect typical classification map library, a fine measurement skill guide and an infrared thermal imager technical parameter setting guide, wherein the typical current thermal defect map library is used for judging the defect type by extracting gray level co-occurrence matrix features of a newly acquired thermal image and comparing similarity with the thermal image feature vectors in the library, and the whole process forms a complete closed-loop working mechanism from information collection, detection analysis, processing scheme formulation and subsequent reference, so that the accurate identification and proper processing of the hardware current thermal defects in the regional structure are effectively realized.
Compared with the prior art, the invention has the beneficial effects that:
The method not only collects basic constitution information of the structure to be processed, but also covers load information, comprises dynamic data such as voltage, current and maximum load time period, and combines various on-site electrified inspection means, including acquisition of surface temperature distribution by a thermal infrared imager, detection of partial discharge by ultraviolet imaging detection equipment, deep analysis of a main loop load curve, comprehensive structure physical state inspection and the like, and acquires running state information of the structure from multiple dimensions, so that the actual working condition of the structure can be mastered more comprehensively, and defect misjudgment or missed judgment caused by information loss is avoided.
According to the positions of the structures to be processed, including the vicinity of a GIS, the vicinity of a transformer and the vicinity of a lightning arrester, specific electrification tests are carried out, the possible influence of peripheral equipment on the structures is fully considered, potential current heating defect factors under different environments are deeply excavated, the defects are often ignored easily in the prior art, the defect sources can be positioned more accurately, and the diagnosis accuracy is improved.
The method comprises the steps of establishing a circuit topology model, carrying out circuit simulation to calculate an equivalent resistance power change curve, carrying out a series of operations such as structure disassembly inspection, electrical parameter measurement, heating simulation experiment and the like in various defined states, and deeply exploring the performance change rule of a structure under different working conditions through detailed recording and analysis of bolt torsion, branch resistance value change and heating process data in different states so as to accurately find out the internal relation between the current induced thermal defects, the structural state and the load condition.
Detailed defect cause conclusions including direct causes, indirect causes and related influence factors are obtained through comprehensive analysis of various detection, simulation and test results, and defect type subsets are established or classified, so that subsequent rapid calling and reference are facilitated.
The constructed typical classification map library of the thermal defects of the structure to be processed, the fine measurement skill guide and the thermal infrared imager technical parameter setting guide provide visual and practical tools for operators. In actual operation, the one-to-one correspondence between thermal image and fault point in the map library can identify the similar defect cause fast and save diagnosis time, while the fine measurement skill guide and the thermal infrared imager parameter setting guide are favorable for improving the detection accuracy and normalization and ensuring the reliability of detection data.
Drawings
FIG. 1 is a flow chart of a method for analyzing causes of current-induced thermal defects of hardware in a region structure and performing closed-loop processing;
FIG. 2 is a diagram of a system for analyzing the cause of a current-induced thermal defect of a hardware fitting in a local structure and for closed-loop processing;
FIG. 3 is a diagram showing the structure information to be processed by the method for analyzing the cause of the current-induced thermal defects of hardware in a region structure;
FIG. 4 is a schematic diagram of a typical area of a hardware fitting for a method and a system for analyzing the cause of current-induced thermal defects and for closed-loop processing in a local structure according to the present invention;
Wherein, 1, an insulator, 2, a yoke plate, 3, a hanging plate, 4, an adjusting plate, 5 and a bolt, 6, U-shaped link, 7, strain clamp, 8, spacer, 9, T drainage clamp.
Detailed Description
The following describes the technical solution in the embodiment of the present invention in full with reference to the drawings in the embodiment of the present invention.
As shown in fig. 1-4, a method for analyzing causes of current-induced thermal defects of hardware in a region structure and performing closed-loop processing includes the following steps:
S1, collecting structure information to be processed;
S2, carrying out preliminary examination and test of the structure to be processed;
s3, performing cause analysis based on simulation and test;
s4, making a defect closed-loop processing scheme and assigning a map library;
The method comprises the steps of S1, collecting structural information to be processed, wherein the structural information to be processed comprises structural information to be processed and structural load information to be processed, the structural information to be processed comprises metal structural components, insulating structural components and component materials, and the structural load information to be processed comprises voltage, current and a maximum load time period;
step S2, carrying out preliminary examination and test on the structure to be processed, and specifically comprising the following steps:
S21, on-site electrified inspection and diagnostic test, which comprises the following specific steps:
S211, carrying out multi-angle and multi-period infrared thermal image precise measurement on a structure to be processed by adopting an infrared thermal imager, and obtaining a thermal image of the surface temperature distribution of the structure;
S212, detecting whether an ultraviolet light signal generated by partial discharge exists in a structure to be processed by using ultraviolet imaging detection equipment, and recording the signal intensity and the position;
s213, analyzing a main loop load curve to evaluate a load change rule of a structure to be processed, and comparing the load change rule with historical data to judge whether abnormal fluctuation exists;
s214, carrying out comprehensive part missing, loosening, dislocation, burning out, rust, damage, crack and slip inspection on the structure, and recording the found problems and positions in detail;
S22, specific other electrified test steps performed according to the position of the structure to be processed are as follows:
S221, if the structure to be processed of the GIS nearby part is the GIS nearby part, after referring to GIS ultrahigh frequency and ultrasonic partial discharge live detection historical data, performing GIS ultrahigh frequency and ultrasonic partial discharge live detection by adopting high-precision ultrahigh frequency and ultrasonic partial discharge detection equipment according to preset detection paths and parameter settings;
S222, if the structure to be processed near the transformer is the structure to be processed, firstly consulting the ultra-high frequency and ultrasonic partial discharge live detection historical data of the transformer, then carrying out GIS ultra-high frequency and ultrasonic partial discharge live detection, consulting the iron core grounding current on-line monitoring historical data, and then carrying out iron core grounding current live test by using a professional iron core grounding current test instrument;
S223, if the structure is to be processed nearby the lightning arrester, referring to the lightning arrester resistive current detection historical data and the alternating current withstand voltage test data, and carrying out lightning arrester resistive current live detection by using special lightning arrester resistive current live detection equipment;
s224, if an obvious grounding point exists near the structure to be processed, conducting detection of the grounding down conductor is carried out by adopting a high-precision grounding resistance tester, and the grounding resistance value and the conducting condition are recorded;
step S3, performing simulation and test-based cause analysis, including the following steps:
S31, checking a structure to be processed and gradually checking for dominant defects, wherein the detailed steps are as follows:
S311, after the structure to be processed is disassembled, checking the appearance of each constituent hardware fitting by adopting a magnifying glass, and photographing, marking and recording the type, position and severity of the defects under the conditions of rust, crack and manufacturability defects;
S312, establishing a circuit topology model of a structure to be processed, measuring electrical parameters of each component, recording the electrical parameters in a system, and recording and inputting a simulation analysis device of the current heating defect, wherein the simulation analysis device of the current heating defect comprises a central thermal imaging characteristic recording device and an infrared imager;
S313, carrying out circuit simulation according to the circuit topology model, the load state and the structure state of the processing structure, and calculating the power change curves of the equivalent resistors;
S314, when the hardware fitting with the coating is used for checking the coating, a hydrophobicity detecting instrument is adopted for carrying out hydrophobicity test, a pollution degree measuring device is used for carrying out pollution degree test and checking discharge traces, and detection data and results are recorded;
S315, operating in different states defining the structure to be processed:
S3151, under JGZT < 1 >, sampling rust spots and clean hardware parts, conveying the samples to metallographic analysis and recording metallographic structure results;
s3152, in JGZT state, using torsion tester to detect torsion of each bolt, and recording torsion value;
s3153, repeating the operation of S3152 and recording data in JGZT state;
S3154, repeating the operation of S3152 again and recording data in JGZT' S4 state;
s3155, in JGZT states, respectively measuring the branch resistance value of each branch contained in the circuit topology model of the structure to be processed by adopting a resistance measuring instrument, and recording the resistance value;
s3156, repeating the operation of S3155 and recording data in JGZT' S2 state;
s3157, repeating the operation of S3155 and recording data in JGZT state;
S3158, repeating the operation of S3155 and recording data in JGZT to a state;
S32, the heating simulation experiment of the structure to be processed comprises the following steps:
s321: JGZT2 state structure to be processed heating simulation experiment:
S3211, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
S3212, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3213, under JGZT, comprehensively setting current and voltage according to actual operation parameters of the structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
s322: JGZT3 state structure to be processed heating simulation experiment:
S3221, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3222, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3223, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
S323: JGZT4 state structure to be processed heating simulation experiment:
s3231, connecting a structure to be processed to a special heating simulation test device in JGZT < 4 >, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3232, under JGZT4 state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out heating simulation test and recording temperature distribution condition;
s3233, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
the specific contents of the different states of the defined structure to be processed are as follows:
JGZT1, a ground placement state;
JGZT2, clamping two ends by an analog analysis device of the current heating defect and tensioning to 70% of an installation standard tension value;
JGZT3, clamping two ends by an analog analysis device of the current heating defect and tensioning to 100% of an installation standard tension value;
JGZT4, clamping two ends by an analog analysis device of the current heating defect and tensioning to 130% of an installation standard tension value;
JGZT5, clamping two ends by a simulation analysis device of the current induced thermal defect, tensioning to 100% of an installation standard tension value, and setting artificial defects, including adjusting the torsion of a bolt in a structure, polishing rust parts and padding insulating pads in gaps of the structure;
Step S4, a defect closed-loop processing scheme is formulated, and a map library is specifically formed by:
S41, establishing a defect type subset, which comprises the following specific steps:
s411, comprehensively analyzing the detection, simulation and test results obtained in the step S3 to obtain a cause conclusion about the current-induced thermal defect of the structure to be processed, wherein the cause conclusion comprises a direct cause, an indirect cause and related influence factors of the defect;
s412, establishing a new defect type subset or inducing the new defect type subset into an existing defect type subset according to the data entry specification of the defect type library of the simulation analysis device to ensure that the conclusion data can be effectively called and referenced in the follow-up defect analysis and processing;
s42, decomposing the structural features and structural members of the structure to be processed, and counting the steps of the system, wherein the steps are as follows:
S421, for a typical area structure in a transformer substation, specific model, specification and quantity information of insulating equipment, flow-bearing hardware and non-flow-bearing hardware contained in a decomposition area comprise insulators, connecting hardware, strain clamps, drainage clamps and wires;
S422, in a simulation analysis device of typical current-induced thermal defects, setting the spatial relationship of structural members of each type of structure to be processed according to the division of defect type subsets and accurately describing the spatial relationship;
S423, in a typical simulation analysis device for current-induced thermal defects, setting state parameters of structural members of each type of structure to be processed according to the division of defect type subsets, wherein the simulation analysis device specifically comprises:
S4231, inputting detailed record data of the appearance inspection in the steps S2 and S3, including information such as defect position, type and size when the appearance inspection result is recorded;
s4232, inputting metallographic structure images, component analysis data and the like obtained by metallographic analysis in the step S3 when metallographic analysis results are recorded;
S4233, inputting the branch resistance value data measured in different states in the step S3 when the branch resistance test result is recorded;
S4234, when the central thermal image position is recorded, determining the central thermal image position coordinates by analyzing the thermal image diagrams in the steps S2 and S3 and recording;
S4235, when the central thermal image map feature is recorded, corresponding thermal image map feature data are recorded according to classification, and the method specifically comprises the steps of connecting electrical equipment with a metal part, connecting the metal part with the metal part, connecting a metal wire with a disconnecting switch, connecting the metal part with a current transformer, connecting a capacitor joint with a reactor, and connecting the capacitor joint with a capacitor, wherein the capacitor joint comprises an iron core, a winding and a transformer, and the transformer comprises a box body, the iron core and the winding;
S4236, when the thermal image transfer process under the variable load is recorded, according to the heating simulation experiment data of the structure to be processed in the step S32, concretely, whether the structure to be processed has the most hot spot transfer phenomenon or not in various states, if the most hot spot transfer phenomenon exists, whether the hot spot is consistent with the actual fault point or not, and recording relevant data and analysis results;
S4237, when the corresponding relation between the actual fault and the fault appearance is recorded, and under the condition that the fault appearance transfer is definitely existed, namely, when the situation that the actual fault point is inconsistent with the hottest point of the structure to be processed exists, a layering classification method is adopted, the corresponding relation between the actual fault point and the hottest point under different working conditions, namely, under different loads is definitely existed, and data is recorded;
s43, providing a typical classification map library of the thermal defects of the structure to be processed, wherein the steps are as follows:
S431, acquiring a typical thermal image of a structure to be processed under each condition according to a cause analysis conclusion, namely, the position of a fault point, whether the hottest point has a transfer and transfer process or not and the hottest point temperature change under the grading load;
S432, forming a classification map library from the collected thermal image according to the classification standards of fault types and structure types, establishing a one-to-one correspondence between the thermal image and fault points, and storing the map library in a database system which can be conveniently inquired and called so as to guide the rapid identification of similar defect causes;
S44, providing a technical parameter setting guide of a thermal infrared imager and a precision measurement skill guide of a structure to be processed, wherein the steps are as follows:
S441, according to the construction information of the structure to be processed, the environment information of the structure to be processed and the experience information in the cause analysis and research process, a precision measurement skill classification guide of the structure to be processed is provided by comparing the material temperature and temperature rise limit theoretical value of the high-voltage equipment with the common material emissivity reference value;
S442, according to the structure formation information to be processed, the structure environment information to be processed and the experience information in the cause analysis research process, comparing with the common infrared thermal imager equipment model, giving out a thermal imager technical parameter setting guide, including recommended values of parameters such as image resolution, temperature measurement range, emissivity setting and the like, so that an operator can accurately set the infrared thermal imager parameters according to the specific conditions of the structure to be processed;
the heating simulation test simulates a load state of a structure to be processed through a large current generating device and a high voltage generating device, adjusts tension of the structure to be processed, adjusts torsion of bolts in the structure, polishes rusted parts, and fills insulating pads in gaps of the structure to simulate different structure states by adjusting tension of the test device, and develops a test under the condition of JGZT-1 in the condition of FHZT-3, wherein the condition of FHZT-3 is specifically as follows:
FHZT1 state 50% rated load, 2 hours of run time;
FHZT2 state 120% rated load, 2 hours of run time;
FHZT3 state-actual load curve over failure time, run time 2 hours, including peak load.
A hardware fitting current heating defect cause analysis and closed loop processing system in a regional structure comprises a front end processing module, a defect analysis module and a strategy decision module, and is characterized in that the system executes steps for realizing the method of any one of claims 1 to 7, the front end processing module comprises an information input module, the information input module inputs structure composition information to be processed and structure load information to be processed, the defect analysis module comprises a local server, a central data processing module and a typical current heating simulation analysis device, and the typical current heating simulation analysis device specifically comprises a central thermal imaging characteristic recording device and an infrared imager.
The strategy decision module comprises a fine measurement skill guide and a thermal infrared imager technical parameter setting guide which are obtained from the defect analysis module, and a typical current heating defect map library.
The comparison method of the typical current-induced thermal defect map library comprises the following steps:
For a newly acquired thermal image, after the thermal image is converted into a matrix form, the GLCM characteristics of the gray level co-occurrence matrix are extracted, and the contrast C and the correlation R can be extracted from the gray level co-occurrence matrix, wherein the formula is as follows:
Wherein G is gray level, P is gray level co-occurrence matrix, pij represents pixel points with gray values of i and j, ,,,The mean value and standard deviation corresponding to the gray values i and j are respectively;
Constructing a feature vector F= [ C, R ] of the thermal image;
When comparing the similarity S of the two thermal images F, the formula is as follows:
wherein, F 1 is a newly acquired thermal image feature vector, F 2 is a thermal image feature vector of a typical current-induced thermal defect map library, and the closer the similarity value is 1, the more similar the two thermal images are, the more similar the current-induced thermal defect types may be.
The specific implementation steps are as follows:
The method comprises the steps of S1, collecting structure information to be processed, specifically comprising structure information to be processed and structure load information to be processed, wherein the structure information to be processed specifically comprises metal structure components, insulating structure components and component materials, and the structure load information to be processed specifically comprises voltage, current and a maximum load time period;
s2, carrying out preliminary examination and test of the structure to be processed, wherein the method specifically comprises the following steps:
S21, on-site electrified inspection and diagnostic test, which comprises the following specific steps:
S211, carrying out multi-angle and multi-period infrared thermal image precise measurement on a structure to be processed by adopting an infrared thermal imager, and obtaining a thermal image of the surface temperature distribution of the structure;
S212, detecting whether an ultraviolet light signal generated by partial discharge exists in a structure to be processed by using ultraviolet imaging detection equipment, and recording the signal intensity and the position;
s213, analyzing a main loop load curve to evaluate a load change rule of a structure to be processed, and comparing the load change rule with historical data to judge whether abnormal fluctuation exists;
s214, carrying out comprehensive part missing, loosening, dislocation, burning out, rust, damage, crack and slip inspection on the structure, and recording the found problems and positions in detail;
S22, specific other electrified test steps performed according to the position of the structure to be processed are as follows:
S221, if the structure to be processed of the GIS nearby part is the GIS nearby part, after referring to GIS ultrahigh frequency and ultrasonic partial discharge live detection historical data, performing GIS ultrahigh frequency and ultrasonic partial discharge live detection by adopting high-precision ultrahigh frequency and ultrasonic partial discharge detection equipment according to preset detection paths and parameter settings;
S222, if the structure to be processed near the transformer is the structure to be processed, firstly consulting the ultra-high frequency and ultrasonic partial discharge live detection historical data of the transformer, then carrying out GIS ultra-high frequency and ultrasonic partial discharge live detection, consulting the iron core grounding current on-line monitoring historical data, and then carrying out iron core grounding current live test by using a professional iron core grounding current test instrument;
S223, if the structure is to be processed nearby the lightning arrester, referring to the lightning arrester resistive current detection historical data and the alternating current withstand voltage test data, and carrying out lightning arrester resistive current live detection by using special lightning arrester resistive current live detection equipment;
s224, if an obvious grounding point exists near the structure to be processed, conducting detection of the grounding down conductor is carried out by adopting a high-precision grounding resistance tester, and the grounding resistance value and the conducting condition are recorded;
S3, carrying out cause analysis based on simulation and test, wherein the method specifically comprises the following steps:
S31, checking a structure to be processed and gradually checking for dominant defects, wherein the detailed steps are as follows:
S311, after the structure to be processed is disassembled, checking the appearance of each constituent hardware fitting by adopting a magnifying glass, and photographing, marking and recording the type, position and severity of the defects under the conditions of rust, crack and manufacturability defects;
S312, establishing a circuit topology model of a structure to be processed, measuring electrical parameters of each component, recording the electrical parameters in a system, and recording and inputting a simulation analysis device of the current heating defect, wherein the simulation analysis device of the current heating defect comprises a central thermal imaging characteristic recording device and an infrared imager;
S313, carrying out circuit simulation according to the circuit topology model, the load state and the structure state of the processing structure, and calculating the power change curves of the equivalent resistors;
S314, when the hardware fitting with the coating is used for checking the coating, a hydrophobicity detecting instrument is adopted for carrying out hydrophobicity test, a pollution degree measuring device is used for carrying out pollution degree test and checking discharge traces, and detection data and results are recorded;
S315, operating in different states defining the structure to be processed:
S3151, under JGZT < 1 >, sampling rust spots and clean hardware parts, conveying the samples to metallographic analysis and recording metallographic structure results;
s3152, in JGZT state, using torsion tester to detect torsion of each bolt, and recording torsion value;
s3153, repeating the operation of S3152 and recording data in JGZT state;
S3154, repeating the operation of S3152 again and recording data in JGZT' S4 state;
s3155, in JGZT states, respectively measuring the branch resistance value of each branch contained in the circuit topology model of the structure to be processed by adopting a resistance measuring instrument, and recording the resistance value;
s3156, repeating the operation of S3155 and recording data in JGZT' S2 state;
s3157, repeating the operation of S3155 and recording data in JGZT state;
S3158, repeating the operation of S3155 and recording data in JGZT to a state;
S32, the heating simulation experiment of the structure to be processed comprises the following steps:
s321: JGZT2 state structure to be processed heating simulation experiment:
S3211, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
S3212, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3213, under JGZT, comprehensively setting current and voltage according to actual operation parameters of the structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
s322: JGZT3 state structure to be processed heating simulation experiment:
S3221, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3222, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3223, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
S323: JGZT4 state structure to be processed heating simulation experiment:
s3231, connecting a structure to be processed to a special heating simulation test device in JGZT < 4 >, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3232, under JGZT4 state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out heating simulation test and recording temperature distribution condition;
s3233, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
the specific contents of the different states of the defined structure to be processed are as follows:
JGZT1, a ground placement state;
JGZT2, clamping two ends by an analog analysis device of the current heating defect and tensioning to 70% of an installation standard tension value;
JGZT3, clamping two ends by an analog analysis device of the current heating defect and tensioning to 100% of an installation standard tension value;
JGZT4, clamping two ends by an analog analysis device of the current heating defect and tensioning to 130% of an installation standard tension value;
JGZT5, clamping two ends by a simulation analysis device of the current induced thermal defect, tensioning to 100% of an installation standard tension value, and setting artificial defects, including adjusting the torsion of a bolt in a structure, polishing rust parts and filling insulating pads in gaps of the structure.
S4, making a defect closed-loop processing scheme and assigning a map library specifically as follows:
S41, establishing a defect type subset, which comprises the following specific steps:
s411, comprehensively analyzing the detection, simulation and test results obtained in the step S3 to obtain a cause conclusion about the current-induced thermal defect of the structure to be processed, wherein the cause conclusion comprises a direct cause, an indirect cause and related influence factors of the defect;
s412, establishing a new defect type subset or inducing the new defect type subset into an existing defect type subset according to the data entry specification of the defect type library of the simulation analysis device to ensure that the conclusion data can be effectively called and referenced in the follow-up defect analysis and processing;
s42, decomposing the structural features and structural members of the structure to be processed, and counting the steps of the system, wherein the steps are as follows:
S421, for a typical area structure in a transformer substation, specific model, specification and quantity information of insulating equipment, flow-bearing hardware and non-flow-bearing hardware contained in a decomposition area comprise insulators, connecting hardware, strain clamps, drainage clamps and wires;
S422, in a simulation analysis device of typical current-induced thermal defects, setting the spatial relationship of structural members of each type of structure to be processed according to the division of defect type subsets and accurately describing the spatial relationship;
S423, in a typical simulation analysis device for current-induced thermal defects, setting state parameters of structural members of each type of structure to be processed according to the division of defect type subsets, wherein the simulation analysis device specifically comprises:
S4231, inputting detailed record data of the appearance inspection in the steps S2 and S3, including information such as defect position, type and size when the appearance inspection result is recorded;
s4232, inputting metallographic structure images, component analysis data and the like obtained by metallographic analysis in the step S3 when metallographic analysis results are recorded;
S4233, inputting the branch resistance value data measured in different states in the step S3 when the branch resistance test result is recorded;
S4234, when the central thermal image position is recorded, determining the central thermal image position coordinates by analyzing the thermal image diagrams in the steps S2 and S3 and recording;
S4235, when the central thermal image map feature is recorded, corresponding thermal image map feature data are recorded according to classification, and the method specifically comprises the steps of connecting electrical equipment with a metal part, connecting the metal part with the metal part, connecting a metal wire with a disconnecting switch, connecting the metal part with a current transformer, connecting a capacitor joint with a reactor, and connecting the capacitor joint with a capacitor, wherein the capacitor joint comprises an iron core, a winding and a transformer, and the transformer comprises a box body, the iron core and the winding;
S4236, when the thermal image transfer process under the variable load is recorded, according to the heating simulation experiment data of the structure to be processed in the step S32, concretely, whether the structure to be processed has the most hot spot transfer phenomenon or not in various states, if the most hot spot transfer phenomenon exists, whether the hot spot is consistent with the actual fault point or not, and recording relevant data and analysis results;
S4237, when the corresponding relation between the actual fault and the fault appearance is recorded, and under the condition that the fault appearance transfer is definitely existed, namely, when the situation that the actual fault point is inconsistent with the hottest point of the structure to be processed exists, a layering classification method is adopted, the corresponding relation between the actual fault point and the hottest point under different working conditions, namely, under different loads is definitely existed, and data is recorded;
s43, providing a typical classification map library of the thermal defects of the structure to be processed, wherein the steps are as follows:
S431, acquiring a typical thermal image of a structure to be processed under each condition according to a cause analysis conclusion, namely, the position of a fault point, whether the hottest point has a transfer and transfer process or not and the hottest point temperature change under the grading load;
S432, forming a classification map library from the collected thermal image according to the classification standards of fault types and structure types, establishing a one-to-one correspondence between the thermal image and fault points, and storing the map library in a database system which can be conveniently inquired and called so as to guide the rapid identification of similar defect causes;
S44, providing a technical parameter setting guide of a thermal infrared imager and a precision measurement skill guide of a structure to be processed, wherein the steps are as follows:
S441, according to the construction information of the structure to be processed, the environment information of the structure to be processed and the experience information in the cause analysis and research process, a precision measurement skill classification guide of the structure to be processed is provided by comparing the material temperature and temperature rise limit theoretical value of the high-voltage equipment with the common material emissivity reference value;
S442, according to the structure formation information to be processed, the structure environment information to be processed and the experience information in the cause analysis research process, comparing with the common infrared thermal imager equipment model, giving out a thermal imager technical parameter setting guide, including recommended values of parameters such as image resolution, temperature measurement range, emissivity setting and the like, so that an operator can accurately set the infrared thermal imager parameters according to the specific conditions of the structure to be processed;
the heating simulation test simulates a load state of a structure to be processed through a large current generating device and a high voltage generating device, adjusts tension of the structure to be processed, adjusts torsion of bolts in the structure, polishes rusted parts, and fills insulating pads in gaps of the structure to simulate different structure states by adjusting tension of the test device, and develops a test under the condition of JGZT-1 in the condition of FHZT-3, wherein the condition of FHZT-3 is specifically as follows:
FHZT1 state 50% rated load, 2 hours of run time;
FHZT2 state 120% rated load, 2 hours of run time;
FHZT3 state-actual load curve over failure time, run time 2 hours, including peak load.
A hardware fitting current heating defect cause analysis and closed loop processing system in a regional structure comprises a front end processing module, a defect analysis module and a strategy decision module, and is characterized in that the system executes steps for realizing the method of any one of claims 1 to 7, the front end processing module comprises an information input module, the information input module inputs structure composition information to be processed and structure load information to be processed, the defect analysis module comprises a local server, a central data processing module and a typical current heating simulation analysis device, and the typical current heating simulation analysis device specifically comprises a central thermal imaging characteristic recording device and an infrared imager.
The strategy decision module comprises a fine measurement skill guide and a thermal infrared imager technical parameter setting guide which are obtained from the defect analysis module, and a typical current heating defect map library.
The comparison method of the typical current-induced thermal defect map library comprises the following steps:
For a newly acquired thermal image, after the thermal image is converted into a matrix form, the GLCM characteristics of the gray level co-occurrence matrix are extracted, and the contrast C and the correlation R can be extracted from the gray level co-occurrence matrix, wherein the formula is as follows:
Wherein G is gray level, P is gray level co-occurrence matrix, pij represents pixel points with gray values of i and j, ,,,The mean value and standard deviation corresponding to the gray values i and j are respectively;
Constructing a feature vector F= [ C, R ] of the thermal image;
When comparing the similarity S of the two thermal images F, the formula is as follows:
wherein, F 1 is a newly acquired thermal image feature vector, F 2 is a thermal image feature vector of a typical current-induced thermal defect map library, and the closer the similarity value is 1, the more similar the two thermal images are, the more similar the current-induced thermal defect types may be.
Claims (10)
1. A hardware fitting current induced thermal defect cause analysis and closed loop processing method in a regional structure is characterized by comprising the following steps:
S1, collecting structure information to be processed;
S2, carrying out preliminary examination and test of the structure to be processed;
s3, performing cause analysis based on simulation and test;
And S4, making a defect closed-loop processing scheme and assigning a map library.
2. The method for analyzing the causes of the hardware current-induced thermal defects in the regional structure and performing closed-loop processing according to claim 1, wherein the step S1 is to collect structural information to be processed, wherein the structural information to be processed comprises structural information to be processed and structural load information to be processed, the structural information to be processed comprises metal structural components, insulating structural components and component materials, and the structural load information to be processed comprises voltage, current and maximum load time period.
3. The method for analyzing causes and processing closed loops of current-induced thermal defects of hardware in a regional structure according to claim 1, wherein the step S2 of performing preliminary inspection and test of the structure to be processed comprises the following steps:
S21, on-site electrified inspection and diagnostic test, which comprises the following specific steps:
S211, carrying out multi-angle and multi-period infrared thermal image precise measurement on a structure to be processed by adopting an infrared thermal imager, and obtaining a thermal image of the surface temperature distribution of the structure;
S212, detecting whether an ultraviolet light signal generated by partial discharge exists in a structure to be processed by using ultraviolet imaging detection equipment, and recording the signal intensity and the position;
s213, analyzing a main loop load curve to evaluate a load change rule of a structure to be processed, and comparing the load change rule with historical data to judge whether abnormal fluctuation exists;
s214, carrying out comprehensive part missing, loosening, dislocation, burning out, rust, damage, crack and slip inspection on the structure, and recording the found problems and positions in detail;
S22, specific other electrified test steps performed according to the position of the structure to be processed are as follows:
S221, if the structure to be processed of the GIS nearby part is the GIS nearby part, after referring to GIS ultrahigh frequency and ultrasonic partial discharge live detection historical data, performing GIS ultrahigh frequency and ultrasonic partial discharge live detection by adopting high-precision ultrahigh frequency and ultrasonic partial discharge detection equipment according to preset detection paths and parameter settings;
S222, if the structure to be processed near the transformer is the structure to be processed, firstly consulting the ultra-high frequency and ultrasonic partial discharge live detection historical data of the transformer, then carrying out GIS ultra-high frequency and ultrasonic partial discharge live detection, consulting the iron core grounding current on-line monitoring historical data, and then carrying out iron core grounding current live test by using a professional iron core grounding current test instrument;
S223, if the structure is to be processed nearby the lightning arrester, referring to the lightning arrester resistive current detection historical data and the alternating current withstand voltage test data, and carrying out lightning arrester resistive current live detection by using special lightning arrester resistive current live detection equipment;
And S224, if an obvious grounding point exists near the structure to be processed, conducting detection of the grounding down wire is carried out by adopting a high-precision grounding resistance tester, and the grounding resistance value and the conducting condition are recorded.
4. The method for analyzing and processing the cause of the current-induced thermal defect of hardware in a regional structure according to claim 1, wherein the step S3 of performing the cause analysis based on simulation and test comprises the steps of:
S31, checking a structure to be processed and gradually checking for dominant defects, wherein the detailed steps are as follows:
S311, after the structure to be processed is disassembled, checking the appearance of each constituent hardware fitting by adopting a magnifying glass, and photographing, marking and recording the type, position and severity of the defects under the conditions of rust, crack and manufacturability defects;
S312, establishing a circuit topology model of a structure to be processed, measuring electrical parameters of each component, recording the electrical parameters in a system, and recording and inputting a simulation analysis device of the current heating defect, wherein the simulation analysis device of the current heating defect comprises a central thermal imaging characteristic recording device and an infrared imager;
S313, carrying out circuit simulation according to the circuit topology model, the load state and the structure state of the processing structure, and calculating the power change curves of the equivalent resistors;
S314, when the hardware fitting with the coating is used for checking the coating, a hydrophobicity detecting instrument is adopted for carrying out hydrophobicity test, a pollution degree measuring device is used for carrying out pollution degree test and checking discharge traces, and detection data and results are recorded;
S315, operating in different states defining the structure to be processed:
S3151, under JGZT < 1 >, sampling rust spots and clean hardware parts, conveying the samples to metallographic analysis and recording metallographic structure results;
s3152, in JGZT state, using torsion tester to detect torsion of each bolt, and recording torsion value;
s3153, repeating the operation of S3152 and recording data in JGZT state;
S3154, repeating the operation of S3152 again and recording data in JGZT' S4 state;
s3155, in JGZT states, respectively measuring the branch resistance value of each branch contained in the circuit topology model of the structure to be processed by adopting a resistance measuring instrument, and recording the resistance value;
s3156, repeating the operation of S3155 and recording data in JGZT' S2 state;
s3157, repeating the operation of S3155 and recording data in JGZT state;
S3158, repeating the operation of S3155 and recording data in JGZT to a state;
S32, the heating simulation experiment of the structure to be processed comprises the following steps:
s321: JGZT2 state structure to be processed heating simulation experiment:
S3211, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
S3212, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3213, under JGZT, comprehensively setting current and voltage according to actual operation parameters of the structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
s322: JGZT3 state structure to be processed heating simulation experiment:
S3221, connecting a structure to be processed to a heating simulation test device in a JGZT state, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3222, under the JGZT state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out a heating simulation test and recording temperature distribution conditions;
s3223, under JGZT, comprehensively setting current and voltage according to actual operation parameters of a structure to be processed, carrying out a heating simulation test and recording various data in the heating process;
S323: JGZT4 state structure to be processed heating simulation experiment:
s3231, connecting a structure to be processed to a special heating simulation test device in JGZT < 4 >, setting test current according to actual running current parameters of the structure to be processed, carrying out heating simulation test and recording a temperature change curve along with time;
s3232, under JGZT4 state, setting test voltage according to actual operation voltage parameters of the structure to be processed, carrying out heating simulation test and recording temperature distribution condition;
And S3233, in the JGZT state, comprehensively setting current and voltage according to the actual operation parameters of the structure to be processed, carrying out a heating simulation test and recording various data in the heating process.
5. The method for analyzing causes and processing closed loops of hardware current thermal defects in a regional structure according to claim 4, wherein the defining different states of the structure to be processed comprises the following specific contents:
JGZT1, a ground placement state;
JGZT2, clamping two ends by an analog analysis device of the current heating defect and tensioning to 70% of an installation standard tension value;
JGZT3, clamping two ends by an analog analysis device of the current heating defect and tensioning to 100% of an installation standard tension value;
JGZT4, clamping two ends by an analog analysis device of the current heating defect and tensioning to 130% of an installation standard tension value;
JGZT5, clamping two ends by a simulation analysis device of the current induced thermal defect, tensioning to 100% of an installation standard tension value, and setting artificial defects, including adjusting the torsion of a bolt in a structure, polishing rust parts and filling insulating pads in gaps of the structure.
6. The method for analyzing causes and processing closed loops of current-induced thermal defects of hardware in a regional structure according to claim 1, wherein the step S4 is to formulate a defect closed loop processing scheme and assign a map library specifically as follows:
S41, establishing a defect type subset, which comprises the following specific steps:
s411, comprehensively analyzing the detection, simulation and test results obtained in the step S3 to obtain a cause conclusion about the current-induced thermal defect of the structure to be processed, wherein the cause conclusion comprises a direct cause, an indirect cause and related influence factors of the defect;
s412, establishing a new defect type subset or inducing the new defect type subset into an existing defect type subset according to the data entry specification of the defect type library of the simulation analysis device to ensure that the conclusion data can be effectively called and referenced in the follow-up defect analysis and processing;
s42, decomposing the structural features and structural members of the structure to be processed, and counting the steps of the system, wherein the steps are as follows:
S421, for a typical area structure in a transformer substation, specific model, specification and quantity information of insulating equipment, flow-bearing hardware and non-flow-bearing hardware contained in a decomposition area comprise insulators, connecting hardware, strain clamps, drainage clamps and wires;
S422, in a simulation analysis device of typical current-induced thermal defects, setting the spatial relationship of structural members of each type of structure to be processed according to the division of defect type subsets and accurately describing the spatial relationship;
S423, in a typical simulation analysis device for current-induced thermal defects, setting state parameters of structural members of each type of structure to be processed according to the division of defect type subsets, wherein the simulation analysis device specifically comprises:
S4231, inputting detailed record data of the appearance inspection in the steps S2 and S3, including information such as defect position, type and size when the appearance inspection result is recorded;
s4232, inputting metallographic structure images, component analysis data and the like obtained by metallographic analysis in the step S3 when metallographic analysis results are recorded;
S4233, inputting the branch resistance value data measured in different states in the step S3 when the branch resistance test result is recorded;
S4234, when the central thermal image position is recorded, determining the central thermal image position coordinates by analyzing the thermal image diagrams in the steps S2 and S3 and recording;
S4235, when the central thermal image map feature is recorded, corresponding thermal image map feature data are recorded according to classification, and the method specifically comprises the steps of connecting electrical equipment with a metal part, connecting the metal part with the metal part, connecting a metal wire with a disconnecting switch, connecting the metal part with a current transformer, connecting a capacitor joint with a reactor, and connecting the capacitor joint with a capacitor, wherein the capacitor joint comprises an iron core, a winding and a transformer, and the transformer comprises a box body, the iron core and the winding;
S4236, when the thermal image transfer process under the variable load is recorded, according to the heating simulation experiment data of the structure to be processed in the step S32, concretely, whether the structure to be processed has the most hot spot transfer phenomenon or not in various states, if the most hot spot transfer phenomenon exists, whether the hot spot is consistent with the actual fault point or not, and recording relevant data and analysis results;
S4237, when the corresponding relation between the actual fault and the fault appearance is recorded, and under the condition that the fault appearance transfer is definitely existed, namely, when the situation that the actual fault point is inconsistent with the hottest point of the structure to be processed exists, a layering classification method is adopted, the corresponding relation between the actual fault point and the hottest point under different working conditions, namely, under different loads is definitely existed, and data is recorded;
s43, providing a typical classification map library of the thermal defects of the structure to be processed, wherein the steps are as follows:
S431, acquiring a typical thermal image of a structure to be processed under each condition according to a cause analysis conclusion, namely, the position of a fault point, whether the hottest point has a transfer and transfer process or not and the hottest point temperature change under the grading load;
S432, forming a classification map library from the collected thermal image according to the classification standards of fault types and structure types, establishing a one-to-one correspondence between the thermal image and fault points, and storing the map library in a database system which can be conveniently inquired and called so as to guide the rapid identification of similar defect causes;
S44, providing a technical parameter setting guide of a thermal infrared imager and a precision measurement skill guide of a structure to be processed, wherein the steps are as follows:
S441, according to the construction information of the structure to be processed, the environment information of the structure to be processed and the experience information in the cause analysis and research process, a precision measurement skill classification guide of the structure to be processed is provided by comparing the material temperature and temperature rise limit theoretical value of the high-voltage equipment with the common material emissivity reference value;
S442, according to the structure constitution information, the structure environment information and the experience information in the cause analysis research process, comparing with the common infrared thermal imager equipment model, providing an external thermal imager technical parameter setting guide, and recommending values of parameters including image resolution, temperature measuring range, emissivity setting and the like, so that an operator can accurately set the infrared thermal imager parameters according to the specific condition of the structure to be processed.
7. The method for analyzing the cause of the current-induced thermal defect of the hardware fitting in the regional structure and performing closed-loop processing according to claim 4, wherein the heating simulation test simulates the load state of the structure to be processed through a high-current generating device and a high-voltage generating device, the tension of the test device is adjusted to adjust the tension of the structure to be processed, the torsion of a bolt in the structure is adjusted, the rust parts are polished, insulating pads are padded in gaps of the structure, and the like to simulate different structure states, the test is performed through the simulation conditions in FHZT-3 states under JGZT-1 conditions, and the FHZT 1-3 states are specifically as follows:
FHZT1 state 50% rated load, 2 hours of run time;
FHZT2 state 120% rated load, 2 hours of run time;
FHZT3 state-actual load curve over failure time, run time 2 hours, including peak load.
8. A hardware fitting current heating defect cause analysis and closed loop processing system in a regional structure comprises a front end processing module, a defect analysis module and a strategy decision module, and is characterized in that the system executes steps for realizing the method of any one of claims 1 to 7, the front end processing module comprises an information input module, the information input module inputs structure composition information to be processed and structure load information to be processed, the defect analysis module comprises a local server, a central data processing module and a typical current heating simulation analysis device, and the typical current heating simulation analysis device specifically comprises a central thermal imaging characteristic recording device and an infrared imager.
9. The system of claim 8, wherein the policy resolution module comprises a fine measurement skill guideline and a thermal infrared imager technical parameter setting guideline and a typical current thermal defect map library derived from the defect analysis module.
10. The system for analyzing causes of current-induced thermal defects of hardware in a regional structure and performing closed-loop processing according to claim 9, wherein the comparison method of the typical current-induced thermal defect map library is as follows:
For a newly acquired thermal image, after the thermal image is converted into a matrix form, the GLCM characteristics of the gray level co-occurrence matrix are extracted, and the contrast C and the correlation R can be extracted from the gray level co-occurrence matrix, wherein the formula is as follows:
,
Wherein G is gray level, P is gray level co-occurrence matrix, P ij represents pixel points with gray values of i and j, ,,,The mean value and standard deviation corresponding to the gray values i and j are respectively;
Constructing a feature vector F= [ C, R ] of the thermal image;
When comparing the similarity S of the two thermal images F, the formula is as follows:
,
wherein, F 1 is a newly acquired thermal image feature vector, F 2 is a thermal image feature vector of a typical current-induced thermal defect map library, and the closer the similarity value is 1, the more similar the two thermal images are, the more similar the current-induced thermal defect types may be.
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