CN119361409A - Silicon electrode and method for manufacturing the same - Google Patents
Silicon electrode and method for manufacturing the same Download PDFInfo
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- CN119361409A CN119361409A CN202411932226.5A CN202411932226A CN119361409A CN 119361409 A CN119361409 A CN 119361409A CN 202411932226 A CN202411932226 A CN 202411932226A CN 119361409 A CN119361409 A CN 119361409A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 121
- 239000010703 silicon Substances 0.000 title claims abstract description 121
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000012545 processing Methods 0.000 claims description 35
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000007514 turning Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 27
- 230000009286 beneficial effect Effects 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 12
- 238000005299 abrasion Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 7
- 230000002035 prolonged effect Effects 0.000 description 7
- 230000002776 aggregation Effects 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/14—Manufacture of electrodes or electrode systems of non-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本申请实施例提供了一种硅电极及其制作方法，旨在改善硅电极使用寿命较低的问题。所述硅电极包括硅电极本体以及沿所述硅电极本体的周向方向间隔设置的多个贯穿槽，每一所述贯穿槽沿所述硅电极本体的径向方向延伸；所述贯穿槽具有相对设置的第一边和第二边，所述第一边和/或所述第二边为圆角边。本申请中，贯穿槽的第一边和第二边中的至少一者设置为圆角边，圆角边可以降低电弧聚集状况发生的概率，避免电弧损伤贯穿槽。由此，有利于提高硅电极的使用寿命，进而利于降低刻蚀成本。
The embodiment of the present application provides a silicon electrode and a method for manufacturing the same, aiming to improve the problem of low service life of the silicon electrode. The silicon electrode comprises a silicon electrode body and a plurality of through grooves spaced apart along the circumferential direction of the silicon electrode body, each of the through grooves extending along the radial direction of the silicon electrode body; the through groove has a first side and a second side arranged opposite to each other, and the first side and/or the second side are rounded sides. In the present application, at least one of the first side and the second side of the through groove is set as a rounded side, and the rounded side can reduce the probability of arc gathering and avoid arc damage to the through groove. This is beneficial to improving the service life of the silicon electrode, and further to reducing the etching cost.
Description
Technical Field
The application relates to the technical field of semiconductor part processing, in particular to a silicon electrode and a manufacturing method thereof.
Background
The parts for etching by the etching machine are parts which meet the requirements of semiconductor etching equipment and technology in terms of performances such as materials, structures, processes, quality, precision, reliability, stability and the like, and are classified into electrostatic rings, silicon electrodes, grounding clamping rings and other types of structural parts.
The silicon electrode belongs to a core part in etching equipment. In the related art, the service life of the silicon electrode is lower, resulting in higher etching cost.
Disclosure of Invention
The application provides a silicon electrode and a manufacturing method thereof, aiming at solving the problem of lower service life of the silicon electrode.
In a first aspect, an embodiment of the present application provides a silicon electrode, where the silicon electrode includes a silicon electrode body and a plurality of through grooves disposed at intervals along a circumferential direction of the silicon electrode body, each of the through grooves extends along a radial direction of the silicon electrode body, and the through groove has a first edge and a second edge that are disposed opposite to each other, and the first edge and/or the second edge are rounded edges.
In some embodiments, the first edge and the second edge are rounded edges.
In some embodiments, the radius of the rounded edge is greater than or equal to 0.2mm and less than or equal to 0.5mm.
In some embodiments, the silicon electrode is a polysilicon electrode, a monocrystalline silicon electrode, or a silicon carbide electrode.
In a second aspect, an embodiment of the present application provides a method for manufacturing a silicon electrode, including:
Providing a silicon electrode body;
sequentially forming a plurality of penetrating grooves which are arranged at intervals along the circumferential direction on the silicon electrode body, wherein each penetrating groove extends along the radial direction of the silicon electrode body and is provided with a first side and a second side which are oppositely arranged;
The first edge and/or the second edge is rounded.
In some embodiments, the step of rounding the first edge or the second edge comprises:
Selecting one of the plurality of through grooves as a reference groove, and measuring a deviation angle between the extending direction of the reference groove and a preset first reference line;
Rotating the silicon electrode body to zero the deviation angle;
rounding the edge to be processed of the reference groove, wherein the edge to be processed is one of the first edge and the second edge;
and chamfering the edges to be processed of the rest of the plurality of through grooves.
In some embodiments, the step of rounding the first edge and the second edge comprises:
Selecting one of the plurality of through grooves as a reference groove, and measuring a first deviation angle between the extending direction of the reference groove and a preset first reference line;
rotating the silicon electrode body to zero the first deviation angle;
Rounding a first side to be machined of the reference groove and the first sides to be machined of the rest of the plurality of through grooves in sequence, wherein the first side to be machined is one of the first side and the second side;
Turning over the silicon electrode body;
Measuring a second deviation angle between the extending direction of the reference groove and the first reference line;
rotating the silicon electrode body to zero the second deviation angle;
And chamfering a second to-be-machined edge of the reference groove and the second to-be-machined edges of the rest of the plurality of through grooves in sequence, wherein the second to-be-machined edge is the other one of the first edge and the second edge.
In some embodiments, the step of sequentially forming a plurality of penetrating grooves disposed at intervals in the circumferential direction on the silicon electrode body includes:
Sequentially forming a plurality of countersunk head pre-holes which are arranged at intervals along the circumferential direction on the silicon electrode body;
and grinding the countersunk head pre-holes sequentially by using a cutter to form a plurality of through grooves.
In some embodiments, the step of sequentially grinding the countersunk pre-holes using a cutter to form a plurality of the through slots of a predetermined size includes:
dividing the plurality of countersunk head pre-holes into a plurality of groups according to the processing sequence;
Sequentially grinding the plurality of countersunk pre-holes in the current group to form a plurality of through grooves of the current group;
obtaining the size of the last through slot in the current group and comparing the size with a preset size to obtain a slot compensation parameter of the next group;
performing parameter compensation on the cutter according to the groove compensation parameters;
And grinding the plurality of pre-holes in the next group by using the cutter after parameter compensation to form the plurality of through grooves of the next group.
In some embodiments, the mesh number of the cutter is greater than 150 mesh and less than 250 mesh.
In the application, the silicon electrode is annular, and a plurality of through grooves are arranged at intervals along the circumferential direction of the silicon electrode. The through groove can realize ion diffusion, implantation and the like in the etching process, and can change the flow path of current on the silicon electrode, so that the current is more uniformly distributed on the silicon electrode. Further, at least one of the first side and the second side of the through-slot is configured as a rounded edge, which can reduce the probability of occurrence of an arc gathering condition as compared to the edge in the related art, and avoid arc damage to the through-slot. Therefore, the service life of the silicon electrode is prolonged, and the etching cost is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a silicon electrode according to an embodiment of the present application;
FIG. 2 is an enlarged schematic view of the structure at M in FIG. 1;
FIG. 3 is a schematic cross-sectional view of the structure of A-A in FIG. 2;
FIG. 4 is a flow chart of a method for fabricating a silicon electrode according to an embodiment of the application;
FIG. 5 is a schematic flow chart of the chamfering process according to an embodiment of the application;
FIG. 6 is a schematic illustration of yet another process for rounding according to an embodiment of the present application;
FIG. 7 is a schematic flow chart of a through slot process according to an embodiment of the application;
FIG. 8 is a schematic flow chart of the through slot grouping process according to an embodiment of the application.
Reference numerals illustrate:
10-silicon electrode, 100-silicon electrode body, 110-through slot, 111-first side, 112-second side, 110 a-reference slot.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
In the description of the present application, it should be understood that, if there is an azimuth or positional relationship indicated by terms such as "upper", "lower", "left", "right", etc., based on the azimuth or positional relationship shown in the drawings, it is only for convenience of describing the present application and simplifying the description, but it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and thus terms describing the positional relationship in the drawings are merely illustrative and should not be construed as limiting the present application, and specific meanings of the terms described above may be understood by those of ordinary skill in the art according to specific circumstances.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as implying or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise. "and/or" describes an association relationship of an association object, and indicates that there may be three relationships, for example, a and/or B, and may indicate that there are three cases of a alone, a and B together, and B alone. The character "/" generally indicates that the context-dependent object is an "or" relationship.
In the description of the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," "secured" and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed, mechanically connected, electrically connected, directly connected, indirectly connected through intermediaries, or in communication between two elements or in interaction with each other, unless explicitly stated otherwise. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
Silicon electrodes are critical components in etching equipment. After etching gas enters the chamber of the plasma etching equipment through the spray head, the etching gas is ionized into plasma by an electric field formed by the silicon electrode. As the etching process proceeds, the silicon electrode is gradually eroded by the bombardment and chemical reaction of the plasma, resulting in loss of the silicon electrode. In the related art, the problem of reduced etching precision is caused when the design life of the silicon electrode is not reached, which results in greatly reduced actual life of the silicon electrode and higher etching cost.
The applicant has found through intensive studies that the reason why the actual life of the silicon electrode is greatly reduced is that the through grooves on the silicon electrode are liable to collect arcs which affect the life and etching effect of the silicon electrode. Based on the above consideration, the inventor provides a silicon electrode and a manufacturing method of the silicon electrode, and the rounded corner design is carried out on the groove edge of the silicon electrode, so that the probability of occurrence of the electric arc in the through groove aggregation condition is reduced, the service life and the etching effect of the silicon electrode are improved, and the etching cost is reduced.
An embodiment of the first aspect of the present application proposes a silicon electrode 10. As shown in fig. 1 to 3, the silicon electrode 10 includes a silicon electrode body 100 and a plurality of through grooves 110 disposed at intervals along a circumferential direction of the silicon electrode body 100, each through groove 110 extending in a radial direction of the silicon electrode body 100, the through groove 110 having a first side 111 and a second side 112 disposed opposite to each other, the first side 111 and/or the second side 112 being rounded edges.
In the present application, the silicon electrode 10 is annular, and a plurality of through grooves 110 are provided at intervals in the circumferential direction of the silicon electrode 10. Ion diffusion, implantation, etc. during etching can be realized through the through-slot 110, and the flow path of current on the silicon electrode 10 can be changed, so that the current is more uniformly distributed on the silicon electrode 10. The first side 111 and the second side 112 of the through groove 110 are two groove sides opposing each other in the depth direction of the through groove 110.
In the present application, at least one of the first edge 111 and the second edge 112 is configured as a rounded edge, which can reduce the probability of occurrence of arc aggregation compared to the edges in the related art, and avoid arc damage through the groove 110. Thereby, the service life of the silicon electrode 10 is advantageously prolonged, and further, the etching cost is advantageously reduced.
In some embodiments, as shown in fig. 3, both the first edge 111 and the second edge 112 are rounded edges. In this way, the probability of occurrence of an arc aggregation condition can be further reduced, thereby contributing to further improvement in the service life of the silicon electrode 10.
In some embodiments, the radius of the rounded edge is greater than or equal to 0.2mm and less than or equal to 0.5mm. The applicant finds through researches and experiments that the radius of the round corner edge needs to be controlled within a reasonable range, and the radius of the round corner edge is controlled to be 0.2-0.5mm in the embodiment, so that on one hand, the etching effect after rounding can be ensured, on the other hand, the probability of occurrence of the arc aggregation condition can be reduced, and the service life of the silicon electrode 10 is prolonged. Alternatively, the radius of the rounded edge is 0.2mm, 0.3mm, 0.4mm, 0.5mm, etc.
Preferably, in a specific embodiment, the radius of the rounded edge is 0.3mm. The applicant has found through research and experiments that when the radius of the rounded corner is 0.3mm, the etching effect of the silicon electrode 10 is not affected, and the electric arc is not accumulated at the rounded corner edge, so that the service life of the silicon electrode 10 can be prolonged to the greatest extent, and the etching cost is reduced.
In some embodiments, silicon electrode 10 is a polysilicon electrode, a monocrystalline silicon electrode, or a silicon carbide electrode. Polycrystalline silicon and single crystal silicon are two different forms of silicon, and silicon carbide is an inorganic substance composed of a carbon element and a silicon element.
In some embodiments, the through slots 110 are waist slots. In this embodiment, the through groove 110 is set to be a waist-shaped groove, and no edge occurs on the inner wall of the waist-shaped groove, so that the probability of occurrence of the arc aggregation condition on the through groove 110 can be further reduced, and further the service life of the silicon electrode 10 can be further prolonged.
In a second aspect, the present application provides a method for manufacturing a silicon electrode 10. As shown in fig. 4, the method for manufacturing the silicon electrode 10 includes:
Providing a silicon electrode body 100;
A plurality of penetrating grooves 110 are sequentially formed on the silicon electrode body 100 along the circumferential direction at intervals, each penetrating groove 110 extends along the radial direction of the silicon electrode body 100, and the penetrating grooves 110 are provided with a first edge 111 and a second edge 112 which are oppositely arranged;
The first edge 111 and/or the second edge 112 are rounded.
In the method for manufacturing the silicon electrode 10 of the present application, the silicon electrode body 100 refers to a middle workpiece to be machined after the upper and lower surfaces of the silicon electrode blank are ground by a grinding machine, which can ensure the flatness in the subsequent processing and the thickness of the finished silicon electrode 10. After grinding by the grinder, a plurality of through grooves 110 are formed in the silicon electrode body 100 by the ultrasonic device. Thereafter, the first side 111 and/or the second side 112 of the through-slot 110 is rounded by means of an ultrasonic device. It is to be understood that the above process omits the processing of other structures of the silicon electrode body 100, such as a large outer diameter, a small outer diameter, a step surface, etc., which may be processed before the processing of the through groove 110 or may be processed during the processing of the through groove 110, which is not limited in the present application.
At least one of the first side 111 and the second side 112 of the silicon electrode 10 manufactured by the manufacturing method of the present application is configured as a rounded edge, which can reduce the occurrence probability of an arc aggregation condition and avoid arc damage to the through groove 110. Thereby, the service life of the silicon electrode 10 is advantageously prolonged, and further, the etching cost is advantageously reduced.
It is easy to understand that the first edge 111 and/or the second edge 112 are rounded, that is, one of the first edge 111 and the second edge 112 is rounded, or both edges of the first edge 111 and the second edge 112 are rounded, and the method can be flexibly selected according to practical use.
In some embodiments, as shown in fig. 5 and referring to fig. 1 and 2, the step of rounding the first edge 111 or the second edge 112 comprises:
Selecting one of the plurality of through grooves 110 as a reference groove 110a, and measuring a deviation angle between the extending direction of the reference groove 110a and a preset first reference line L;
Rotating the silicon electrode body 100 to zero the deviation angle;
Rounding the side to be processed of the reference groove 110a, the side to be processed being one of the first side 111 and the second side 112;
the remaining plurality of edges to be machined of the through slots 110 are rounded.
The present embodiment proposes a specific step of rounding the first edge 111 or the second edge 112. The to-be-processed side is one of the first side 111 and the second side 112, which means that the to-be-processed side is different according to the different processing surface settings of the silicon electrode body 100. For example, when one side surface of the silicon electrode body 100 near the first side 111 of the through groove 110 is a processed surface, all the first sides 111 of the through groove 110 are processed sides, and when one side surface of the silicon electrode body 100 near the second side 112 of the through groove 110 is a processed surface, all the second sides 112 of the through groove 110 are processed sides. The first reference line L is a positioning reference line extending in a certain horizontal direction, and the reference groove 110a is a first through groove 110 to be rounded.
In this embodiment, one of the through slots 110 is selected as the reference slot 110a, and then the extending direction of the reference slot 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned, ensuring that the position of the reference groove 110a is at a preset position. Thereafter, the side to be machined of the reference groove 110a and the remaining sides to be machined of the plurality of through grooves 110 are sequentially machined in the machining order. Thus, the uniformity of the rounding process of the groove edges of all the through grooves 110 positioned on the same side can be improved, thereby being beneficial to prolonging the service life of the silicon electrode 10 and reducing the etching cost.
In some embodiments, as shown in fig. 6 and referring to fig. 1 and 2, the step of rounding the first edge 111 and the second edge 112 includes:
selecting one of the plurality of through grooves 110 as a reference groove 110a, and measuring a first deviation angle between the extending direction of the reference groove 110a and a preset first reference line L;
rotating the silicon electrode body 100 to zero the first deviation angle;
Sequentially rounding a first side to be machined of the reference groove 110a, which is one of the first side 111 and the second side 112, and the remaining first sides to be machined of the plurality of through grooves 110;
Flipping the silicon electrode body 100;
Measuring a second deviation angle between the extending direction of the reference groove 110a and a preset first reference line L;
Rotating the silicon electrode body 100 to zero the second deviation angle;
The second to-be-machined side of the reference groove 110a, which is the other one of the first side 111 and the second side 112, and the remaining second to-be-machined sides of the plurality of through grooves 110 are rounded in order.
The present embodiment proposes a specific step of rounding the first edge 111 and the second edge 112. Wherein the first side to be processed is one of the first side 111 and the second side 112, and the second side to be processed is the other of the first side 111 and the second side 112 means that the sides to be processed are different according to different processing surface settings of the silicon electrode body 100. For example, in the initial state, when a surface of the silicon electrode body 100 near the first side 111 of the through groove 110 is a processing surface, all the first sides 111 of the through groove 110 are first sides to be processed, and the second sides 112 are second sides to be processed. For another example, in the initial state, when a surface of the silicon electrode body 100 near the second side 112 of the through groove 110 is a processing surface, all the second sides 112 of the through groove 110 are first sides to be processed, and the first side 111 is a second side to be processed. The first reference line L is a positioning reference line extending in a certain horizontal direction, and the reference groove 110a is a first through groove 110 to be rounded.
In this embodiment, the rounding process is required for both the first side 111 and the second side 112. Taking the first side 111 of all the through grooves 110 and the second side 112 of all the through grooves 110 as an example, the following description will be made:
First, one of the through grooves 110 is selected as a reference groove 110a, and then the extending direction of the reference groove 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned, the position of the reference groove 110a is ensured to be at a preset position, and then the first side to be processed (first side 111) of the reference groove 110a and the first sides to be processed (first sides 111) of the remaining plurality of through grooves 110 are sequentially processed in the processing order. Therefore, the consistency of the chamfering processing of the first edges 111 of all the through grooves 110 positioned on the same side can be improved, the service life of the silicon electrode 10 can be prolonged, and the etching cost can be reduced.
After the rounding of the first side 111 is completed, the silicon electrode body 100 is turned over, and the extending direction of the reference groove 110a is aligned with the first reference line L. In this way, the reference groove 110a can be positioned again, ensuring that the position of the reference groove 110a is still at the preset position. The second side to be machined (second side 112) of the reference groove 110a and the second sides to be machined (first sides 111) of the remaining plurality of through grooves 110 are then machined in sequence. Therefore, the consistency of the second edges 112 of all the through grooves 110 on the same side during rounding processing can be improved, thereby being beneficial to prolonging the service life of the silicon electrode 10 and reducing the etching cost.
In addition, since the first edge 111 and the second edge 112 of each through groove 110 are positioned by the reference groove 110a and the first reference line L, the processing consistency of the first edge 111 and the second edge 112 of each through groove 110 is ensured to be higher, which is further beneficial to further improving the service life of the silicon electrode 10 and reducing the etching cost.
In some embodiments, as shown in fig. 7, the step of sequentially forming a plurality of penetrating grooves 110 disposed at intervals in the circumferential direction on the silicon electrode body 100 includes:
Sequentially forming a plurality of countersunk head pre-holes which are arranged at intervals along the circumferential direction on the silicon electrode body 100;
the countersunk pre-holes are sequentially ground using a cutter to form a plurality of through slots 110.
In this embodiment, when the through groove 110 is manufactured, a plurality of countersunk pre-holes are formed, and then the countersunk pre-holes are ground into the through groove 110. Compared with the processing method of drilling and reaming in the related art, the processing method of the present embodiment can avoid edge collapse of the edge of the through groove 110, thereby being beneficial to improving the processing stability and yield of the through groove 110.
Optionally, in some embodiments, the silicon electrode body 100 is reserved with grinding stock. In this way, even if the through groove 110 breaks, the broken edge can be covered by finishing, so that the processing yield of the through groove 110 can be further improved.
In some embodiments, the mesh number of the cutter is greater than 150 mesh and less than 250 mesh. The number of the cutters directly affects the grinding efficiency and quality. The applicant has found through intensive studies and experiments that the number of the cutter is set to be more than 150 meshes and less than 250 meshes, so that the abrasion of the cutter can be reduced while the processing quality is ensured.
In the first table, after the through groove 110 is machined by using tools with different mesh numbers, the machining condition of the through groove 110 and the abrasion condition of the tools are considered to be satisfied by the through groove 110 when the roughness of the through groove 110 is less than or equal to ra1.6 and no edge breakage occurs.
Table 1 wear conditions of tool and roughness measurement of through groove
As can be seen from the above table, when the number of the cutters is greater than 150 mesh and less than 250 mesh, the through groove 110 formed by the process will not break, and the cutter will wear slightly, so that the cutter can be used continuously. Thus, the number of times of tool replacement can be reduced and the cost can be reduced while ensuring the processing quality of the through groove 110.
The abrasion condition of the cutter is obtained by visual inspection, specifically, a processed cutter image is obtained through a magnifying glass, an industrial camera and the like, and the cutter image is compared with cutter images with preset different abrasion degrees, so that whether the abrasion degree of the cutter is slight abrasion or severe abrasion is judged.
In some embodiments, as shown in fig. 8, the step of sequentially grinding the countersunk pre-holes using a cutter to form a plurality of through slots 110 of a predetermined size includes:
Dividing the plurality of countersunk head pre-holes into a plurality of groups according to the processing sequence;
sequentially grinding the plurality of countersunk pre-holes in the current group to form a plurality of through slots 110 of the current group;
obtaining the size of the last through slot 110 in the current group and comparing the size with a preset size to obtain a slot compensation parameter of the next group;
carrying out parameter compensation on the cutter according to the groove compensation parameters;
the plurality of counter sunk pre-holes in the next set are ground using the parameter compensated tool to form the plurality of through slots 110 of the next set.
How to manage the dimensional stability of the plurality of through slots 110 is one of the processing difficulties of the silicon electrode 10. It will be appreciated that during the continuous grinding of the tool, the tool abrasive particles will fall off, resulting in a smaller tool diameter and a change in the size of the machined through slot 110. The applicant has found through investigation that the dimensions of the through slots 110 remain stable during processing in a certain number of consecutive passes. Thus, the present embodiment proposes a specific step of forming a plurality of high-stability and high-uniformity through grooves 110 using the same cutter:
First, the plurality of countersunk head pre-holes are divided into a plurality of groups according to a processing sequence before processing. Experiments prove that the size of 20-30 continuous through grooves 110 can be kept stable, and the abrasion of the cutter has negligible influence on the machining size. Thus, 20-30 through slots 110 may be grouped in a set. For example, assuming that there are 320 total through slots 110, 320 through slots 110 may be divided into 16 groups. At this time, the size uniformity of the 20 through slots 110 in each group is good.
Next, the 20 counter sunk pre-holes in the current set are ground in sequence to form the 20 through slots 110 of the current set. The current set refers to the set of 20 through slots 110 being machined, and taking the current set as the first set as an example, the 20 counter-sunk pre-holes of the first set are first ground using a cutter, thereby forming 20 through slots 110.
Thereafter, the size of the last through slot 110 of the current group, i.e., the 20 th through slot 110, is measured and compared with a preset size to obtain the slot compensation parameters of the next group. The slot compensation parameters may include, for example, a length compensation value and/or a width compensation value of the through slot 110, and the preset size may be a design length and/or a design width of the through slot 110, etc. The size of the groove compensation parameter may be determined by multiplying a coefficient by a difference between an actual size and a preset size according to the wear condition of the tool, thereby obtaining a value of the groove compensation parameter, and the coefficient may be an empirical coefficient during processing. For example, assuming that the preset dimensions of the through slots 110 are 61mm in slot length, 2mm in slot width, and 59.85 mm and 1.92mm in the 20 th through slot 110, the difference between the actual dimension and the preset dimension of the length is 1.15mm, and the difference between the actual dimension and the preset dimension of the width is 0.08, the coefficients may be, for example, 0.2, 0.4, 0.5, 0.8, etc., and specifically may be flexibly designed according to the processing conditions.
Then, the groove compensation parameters are compensated to the machining parameters of the tool, and the tool after parameter compensation is used for grinding the next group of a plurality of countersunk pre-holes, so that a next group of a plurality of through grooves 110 are formed.
Finally, the above steps are repeated continuously to complete the processing of all the through slots 110 of all the groups.
As can be seen from the above process, in the present embodiment, in the processing of any two adjacent sets of the plurality of through slots 110, the slot compensation parameters are set based on the comparison between the actual size of the through slot 110 of the previous set and the preset size, and the slot compensation parameters are compensated into the processing parameters of the tool, so that the tool can reduce the processing error caused by the tool wear when processing the through slot 110 of the next set, and ensure that the consistency of the size of the through slot 110 of the next set and the size of the through slot 110 of the previous set is higher. In other words, except for the first group, the machining of the through slots 110 of each of the other groups is performed with tool compensation, so as to be beneficial to improving the uniformity of the machining dimensions of all the through slots 110 and the machining yield of the through slots 110. Meanwhile, the processing continuity is improved. By adopting the processing mode, the qualification rate of the through groove 110 can be ensured to be 100%, and the processing time is shortened by 48%, thereby greatly improving the processing efficiency and the yield of the through groove 110.
The silicon electrode 10 according to the first aspect of the present application is manufactured by the manufacturing method of the silicon electrode 10 according to the second aspect, and thus has all the advantageous effects of the method.
The foregoing description of the preferred embodiments of the application is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the application.
Claims (7)
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| CN115938700A (en) * | 2022-12-26 | 2023-04-07 | 深圳顺络电子股份有限公司 | A laminated varistor and electronic equipment |
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| JP2003188294A (en) * | 2001-12-21 | 2003-07-04 | Murata Mfg Co Ltd | Manufacturing method of electronic components |
| JP2012069868A (en) * | 2010-09-27 | 2012-04-05 | Tokyo Electron Ltd | Electrode plate for plasma etching and plasma etching apparatus |
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