CN119335823B - Photoetching process overlay error compensation method and device and photoetching machine - Google Patents
Photoetching process overlay error compensation method and device and photoetching machineInfo
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- CN119335823B CN119335823B CN202411751863.2A CN202411751863A CN119335823B CN 119335823 B CN119335823 B CN 119335823B CN 202411751863 A CN202411751863 A CN 202411751863A CN 119335823 B CN119335823 B CN 119335823B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The application discloses a photoetching process overlay error compensation method, a device and a photoetching machine, which can be used in the field of semiconductor manufacturing, wherein in the method, overlay error distribution data are acquired; the method comprises the steps of obtaining alignment error distribution data, obtaining a target stress compensation scheme based on the alignment error distribution data through a pre-established stress compensation model, wherein the stress compensation model comprises the association relation between compensation stress and compensation parameters corresponding to a plurality of stress executors, and driving the stress executors to apply compensation stress to a mask plate based on the target stress compensation scheme. Therefore, the compensation stress required by the stress executor for compensating the overlay error is obtained through the overlay error distribution data, and further the mask deformation is caused by applying the compensation stress to the mask, so that the compensation of the overlay error in the lithography process is realized, and the overlay error of the lithography process can be reduced.
Description
Technical Field
The present application relates to the field of semiconductor manufacturing technology, and in particular, to a method and an apparatus for compensating alignment errors in a photolithography process, and a photolithography machine.
Background
With the development of semiconductor technology, the integration level of chips is significantly improved, and the requirements for alignment errors in the photolithography process are becoming more stringent.
In semiconductor manufacturing, overlay error refers to the cheapness between each layer of circuitry and can be quantitatively described as the coordinate deviation between the lithographic pattern and the reference pattern in the X-direction and the Y-direction. The conventional projection type photoetching system relies on an optical lens to compensate for the overlay error, however, as the technical node is reduced, the compensation capability gradually approaches to the limit, and the current requirement on the photoetching quality is difficult to meet.
Thus, how to reduce the overlay error of the photolithography process becomes a problem to be solved.
Disclosure of Invention
Based on the problems, the application provides a photoetching process alignment error compensation method and device and a photoetching machine, which can reduce the alignment error of the photoetching process.
The embodiment of the application discloses the following technical scheme:
in a first aspect, an embodiment of the present application provides a method for compensating an overlay error in a photolithography process, where the method includes:
The method comprises the steps of obtaining overlay error distribution data, wherein the overlay error distribution data is the sum of the average value and three times of standard deviation of the absolute value of an overlay error, and the overlay error is the coordinate deviation between a photoetching pattern and a reference pattern of each acquisition point;
Based on the overlay error distribution data, a target stress compensation scheme is obtained through a pre-established stress compensation model, wherein the stress compensation scheme comprises a stress actuator group and compensation stress executed by the stress actuator, and the stress compensation model comprises association relations between compensation stress and compensation parameters corresponding to the stress actuator groups;
And driving a stress actuator to apply compensation stress to the mask plate based on the target stress compensation scheme.
Optionally, the stress compensation model is built by the following method:
acquiring alignment error distribution data corresponding to the stress executor groups under different compensation stresses respectively;
Based on the compensation stress and the overlay error distribution data, establishing an association relation between the compensation stress and compensation parameters;
and establishing a stress compensation model based on the alignment error distribution data respectively corresponding to the plurality of stress executor groups under different compensation stresses and the association relation between the compensation stresses and the compensation parameters.
Optionally, the acquiring overlay error distribution data corresponding to the plurality of stress executor groups under different compensation stresses includes:
Acquiring corresponding alignment errors of the stress executor groups under different compensation stresses respectively;
And determining compensation parameters in the overlay error formula by utilizing the overlay error fitting overlay error formula to obtain overlay error distribution data.
Optionally, the obtaining, based on the overlay error distribution data, a target stress compensation scheme through a stress compensation model established in advance includes:
Extracting a target item in the overlay error distribution data based on the overlay error distribution data, wherein the target item is a high-order item with the frequency more than or equal to 3;
And obtaining a target stress compensation scheme for compensating the target item through a pre-established stress compensation model.
Optionally, after the driving the stress actuator to apply the compensation stress to the reticle based on the target stress compensation scheme, the method further comprises:
Monitoring the compensated overlay residual error;
and if the continuous times of the overlay residual errors larger than the preset threshold value are larger than the preset times, outputting alarm information.
Optionally, after obtaining the target stress compensation scheme through a pre-established stress compensation model based on the overlay error distribution data, the method further includes:
Determining a compensated target compensation parameter based on the compensation stress in the target stress compensation scheme and the association relation between the compensation stress corresponding to the target stress compensation scheme and the compensation parameter;
and displaying error compensation distribution of each acquisition point in the form of a vector diagram based on the target compensation parameters.
In a second aspect, an embodiment of the present application provides a lithographic process overlay error compensation apparatus, where the apparatus includes an acquisition module, a scheme determination module, and a driving module;
The system comprises an acquisition module, an overlay error distribution data acquisition module, a compensation module and a correction module, wherein the acquisition module is used for acquiring overlay error distribution data, the overlay error distribution data is the sum of the average value and three times of standard deviation of the absolute value of the overlay error, the overlay error is the coordinate difference between the photoetching pattern and the reference pattern of each acquisition point, and each coefficient is a compensation parameter in a polynomial formula of the overlay error distribution data;
The scheme determining module is used for obtaining a target stress compensation scheme through a pre-established stress compensation model based on the overlay error distribution data, wherein the stress compensation scheme comprises a stress executor group and compensation stress executed by the stress executor, and the stress compensation model comprises association relations between the compensation stress and compensation parameters corresponding to the stress executor groups;
The driving module is used for driving the stress actuator to apply compensation stress to the mask plate based on the target stress compensation scheme.
In a third aspect, an embodiment of the present application provides a lithographic apparatus, including a controller and a stress actuator;
the controller is electrically connected with the stress actuator;
the controller is configured to drive the stress actuator according to the step of performing alignment error compensation in the photolithography process according to any of the embodiments of the first aspect.
Optionally, the photoetching machine comprises 16 stress actuators, wherein the stress actuators are symmetrically arranged around the mask, and every 4 stress actuators are arranged on the same side of the mask.
Optionally, the stress actuator is a piezoelectric actuator.
Compared with the prior art, the application has the following beneficial effects:
the application provides an overlay error compensation method of a lithography process, which comprises the steps of firstly obtaining overlay error distribution data, wherein the overlay error distribution data is the sum of the average value and three times of standard deviation of an absolute value of an overlay error, the overlay error is the coordinate deviation between a lithography pattern and a reference pattern of each acquisition point, each coefficient in a polynomial formula of the overlay error distribution data is a compensation parameter, then obtaining a target stress compensation scheme based on the overlay error distribution data through a pre-established stress compensation model, the stress compensation scheme comprises a stress actuator group and compensation stresses executed by the stress actuators, the stress compensation model comprises the association relation between the compensation stresses and the compensation parameters corresponding to the stress actuator groups, and finally, driving the stress actuators to apply the compensation stresses to a mask plate based on the target stress compensation scheme. Therefore, through a pre-established model, the compensation stress executed by each stress executor required by the compensation of the overlay error is reversely obtained through the overlay error distribution data, and further, the mask deformation is caused by applying the compensation stress to the mask, so that the compensation of the overlay error in the lithography process is realized, and the overlay error of the lithography process can be reduced.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for compensating overlay error in a photolithography process according to an embodiment of the present application;
FIG. 2 is a flowchart of a method for creating a stress compensation model according to an embodiment of the present application;
FIG. 3 is a schematic diagram of a stress actuator according to an embodiment of the present application;
FIG. 4 is an overlay error distribution vector diagram according to an embodiment of the present application;
FIG. 5 is a diagram of an error compensation distribution vector provided by an embodiment of the present application;
FIG. 6 is a vector diagram of an overlay residual provided by an embodiment of the present application;
Fig. 7 is a schematic diagram of an overlay error compensation apparatus for a photolithography process according to an embodiment of the present application.
Detailed Description
The method and the device for compensating the alignment error of the lithography process and the lithography machine can be used in the field of semiconductor manufacturing, and the method and the device for compensating the alignment error of the lithography process and the application field of the lithography machine are not limited.
The terms "first," "second," "third," and "fourth" and the like in the description and in the claims and drawings are used for distinguishing between different objects and not for limiting a particular order.
In embodiments of the application, words such as "exemplary" or "such as" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "by way of example" or "for example" should not be construed as preferred or advantageous over other embodiments or designs. Rather, the use of words such as "by way of example" or "such as" is intended to present related concepts in a concrete fashion.
The terminology used in the description of the embodiments of the application herein is for the purpose of describing particular embodiments of the application only and is not intended to be limiting of the application.
In order to make the present application better understood by those skilled in the art, the following description will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, the flowchart of a method for compensating alignment errors in a photolithography process according to an embodiment of the present application includes:
S101, acquiring overlay error distribution data.
And precisely aligning the mask plate with the wafer by using a photoetching machine, exposing the wafer coated with the photoresist by using a light source in the photoetching machine, carrying out chemical reaction on the photoresist under the irradiation, forming a corresponding photoetching pattern according to the pattern of the mask plate, then placing the wafer into a developing solution, and removing the exposed photoresist (positive photoresist) or the unexposed photoresist (negative photoresist) to show a photoresist mask. The wafer can be a silicon wafer, a germanium wafer, a quartz glass substrate or a substrate made of a compound semiconductor material composed of III-group elements and V-group elements, and the like.
As an example, an overlay error may be obtained by scanning the developed lithographic pattern through an automated measurement system using a high resolution optical microscope with image recognition and measurement functions.
Specifically, the overlay error is a coordinate deviation (X, Y) in the X-direction and the Y-direction between the lithographic pattern of each of the acquisition points and the reference pattern. And utilizing the overlay error to fit an overlay error formula, and determining compensation parameters in the overlay error formula to obtain overlay error distribution data.
The Overlay error distribution data Overlay x and Overlay y are the sum of the average absolute value of the Overlay error and three times of standard deviation |mean|+3δ, overlay x represents the case that the Overlay error is in the x direction, overlay y represents the case that the Overlay error is in the y direction, and each coefficient k 1、k2、……、ki is a compensation parameter in a polynomial formula (i.e., an Overlay error formula) of the Overlay error distribution data.
The polynomial formula of the overlay error distribution data is ：Overlayx＝k1+k3·x+k5·y+k7·x2+k9·xy+k11·y2+k13·x3+k15·x2y+k17·xy2+k19·y3;Overlayy＝k2+k4·y+k6·x+k8·y2+k10·xy+k12·x2+k14·y3+k16·y2x+k18·yx2+k20·x3.
As an example, using the overlay error fit overlay error formula, the compensation parameter k that can be solved is shown in table 1 below:
TABLE 1
| X-direction parameter name | Parameter values | Y-direction parameter name | Parameter values |
| K1 | 4.9221 | K2 | 3.2503 |
| K3 | 0.4663 | K4 | -4.8021 |
| K5 | 9.2399 | K6 | 0.8041 |
| K7 | -0.9395 | K8 | 0.3926 |
| K9 | 0.0394 | K10 | -0.8819 |
| K11 | 0.7801 | K12 | -0.3396 |
| K13 | -0.0541 | K14 | -0.0772 |
| K15 | -0.0378 | K16 | -0.0543 |
| K17 | 0.0304 | K18 | -0.0868 |
| K19 | -0.0449 | K20 | -0.0436 |
S102, obtaining a target stress compensation scheme through a pre-established stress compensation model based on overlay error distribution data.
Because the stress can lead to deformation of the mask plate and further lead to change of the overlay error, in the embodiment of the application, the overlay error caused by the compensation stress is complemented with the overlay error originally existing by additionally applying the compensation stress, thereby realizing compensation of the overlay error.
As an example, the stress compensation model may be built by the steps shown in fig. 2:
S21, acquiring alignment error distribution data corresponding to the stress executor groups under different compensation stresses.
Referring to fig. 3, a plurality of stress actuators may be disposed around the reticle, for example, 16 stress actuators F0 to F15 may be disposed, and a plurality of stress actuator groups including different stress actuators may be designed based on basic principles of moment balance and symmetric stress. For example, a combination of 16 stress actuators may be designed, including 8 stress actuators in pairs, 4 with two symmetrical features, and 4 with symmetrical features.
A simulation model can be constructed based on the process conditions of the mask in actual near-field lithography, so that various stress compensation schemes can be simulated and executed, wherein the stress compensation schemes comprise a stress actuator group and compensation stress executed by the stress actuator. As an example, finite element software may be utilized to simulate reticle deformation conditions of different stress actuator sets under different compensation stresses and collect overlay errors. And (3) fitting an overlay error formula by using the overlay error, and solving compensation parameters in the overlay error formula to obtain overlay error distribution data.
And S22, establishing the association relation between the compensation stress and the compensation parameter based on the compensation stress and the overlay error distribution data.
And analyzing experimental results under simulation to obtain management relations between the compensation stress F and the compensation parameter k in different stress actuator groups.
S23, establishing a stress compensation model based on the corresponding overlay error distribution data of the plurality of stress executor groups under different compensation stresses and the association relation between the compensation stress and the compensation parameters.
Specifically, codes can be written based on overlay error distribution data corresponding to the plurality of stress executors under different compensation stresses and association relations between compensation stresses and compensation parameters, and a stress compensation model comprising association relations between the compensation stresses corresponding to the plurality of stress executors and the compensation parameters is built, so that the appropriate stress executors are matched according to the input overlay error distribution data, compensation stresses executed by the stress executors in the stress executors are obtained through inverse solution, and a target stress compensation scheme is obtained.
Optionally, referring to fig. 4, an overlay error distribution vector diagram is provided according to an embodiment of the present application, where the overlay error of each acquisition point is determinedThe distribution is displayed in a vector diagram form, and overlay error distribution data in the X direction and the Y direction are marked in the vector diagram, so that the overlay error distribution situation is displayed more intuitively, and a technician can conveniently and quickly know the overlay error generated by photoetching under the current condition.
The overlay error distribution data is input into a stress compensation model, the stress compensation model can provide a proper stress actuator group, and based on the association relation between the compensation stress and the compensation parameter, the compensation stress capable of minimizing the overlay error is reversely deduced, so that a target stress compensation scheme is obtained. As an example, as shown in table 2, in the obtained target stress compensation scheme, the set of stress actuators to be operated is F0、F2、F3、F4、F5、F6、F7、F8、F11、F13、F14 and F 15, and the compensation stress to be executed by each stress actuator is shown in table 2.
TABLE 2
And S103, driving a stress actuator to apply compensation stress to the mask plate based on the target stress compensation scheme.
By way of example, the stress actuator may be a piezoelectric actuator or other device that can apply a stress condition around the reticle as shown in FIG. 3. The stress executor is operated to execute the target stress compensation scheme, so that the overlay error can be compensated.
Optionally, after the target stress compensation scheme is obtained, the target compensation parameter after compensation is determined based on the compensation stress in the target stress compensation scheme and the association relation between the compensation stress corresponding to the target stress compensation scheme and the compensation parameter, so that the target compensation parameter after stress compensation as shown in table 3 can be obtained, and further, an error compensation distribution vector diagram as shown in fig. 5 can be provided based on the target compensation parameter, and error compensation distribution of each acquisition point is displayed in a vector diagram form, that is, coordinate deviation of the lithography pattern after compensation and before compensation of each acquisition point is displayed, so that a user can intuitively check the error compensation condition of each acquisition point.
TABLE 3 Table 3
Alternatively, after driving the stress actuator based on the target stress compensation scheme, the overlay residual remaining after compensation may be monitored during execution of the lithography program by the same method as the acquisition of the overlay error distribution data. As an example, as shown in fig. 6, in this example, the alignment residual |mean|+3δ is reduced from tens or even tens of nanometers in fig. 4 to below 2nm, so as to effectively compensate for the alignment error.
And if the continuous times of the overlay residual errors larger than the preset threshold value are larger than the preset times, outputting alarm information.
For example, the preset times may be three times, if the overlay residual is continuously three times greater than the preset threshold value from the first lithography after executing the target stress compensation scheme, the method provided by the embodiment of the application may not be considered to effectively compensate the overlay error, at this time, alarm information is output and the lithography operation is stopped, if the overlay residual of the first lithography after executing the target stress compensation scheme is less than or equal to the preset threshold value, and if the overlay residual is continuously three times greater than the preset threshold value in the subsequent process of executing the lithography process, the overlay error may be considered to be further changed along with the increase of the operation times, at this time, alarm information may be output to prompt the redetermination of the target stress compensation scheme.
In the embodiment of the application, first, overlay error distribution data are acquired, the overlay error distribution data are the sum of the average value and three times of standard deviation of the absolute value of the overlay error, the overlay error is the coordinate deviation between the photoetching pattern and the reference pattern of each acquisition point, each coefficient in a polynomial formula of the overlay error distribution data is a compensation parameter, then, a target stress compensation scheme is obtained through a pre-established stress compensation model based on the overlay error distribution data, the stress compensation scheme comprises a stress actuator group and compensation stress executed by the stress actuator, the stress compensation model comprises the association relation between the compensation stress and the compensation parameter corresponding to each of the stress actuator groups, and finally, the stress actuator is driven to apply the compensation stress to the mask plate based on the target stress compensation scheme. Therefore, through a pre-established model, the compensation stress executed by each stress executor required by the compensation of the overlay error is reversely obtained through the overlay error distribution data, and further, the mask deformation is caused by applying the compensation stress to the mask, so that the compensation of the overlay error in the lithography process is realized, and the overlay error of the lithography process can be reduced.
In one embodiment provided by the application, all items in the overlay error distribution data can be compensated by a pre-established stress compensation model to obtain a target stress compensation scheme. Therefore, all items in the overlay error distribution data are in the consideration range of the target stress compensation scheme, the obtained target stress compensation scheme can compensate more than 90% of overlay errors, the overlay errors are accurately and effectively compensated, and the accuracy of pattern transfer is greatly improved.
In another embodiment provided by the application, a target item in the overlay error distribution data can be extracted, for example, a higher-order item with the frequency greater than or equal to 3, such as k 13·x3、k15·x2y、k17·xy2 and k 19·y3, is extracted as the target item, and the higher-order item in the overlay error distribution data is compensated through a pre-established stress compensation model, so as to obtain a target stress compensation scheme for compensating the higher-order item. Therefore, the target stress compensation scheme only needs to consider the higher term in the overlay error distribution data, the difficulty of calculating the target stress compensation scheme by the stress compensation model is greatly reduced, the calculation force occupied by program operation can be saved, the program operation time is shortened, the overlay error by more than 50% can be reduced, and the effective compensation of the overlay error is realized.
Referring to fig. 7, a schematic diagram of a photolithography process overlay error compensation apparatus according to an embodiment of the present application includes an obtaining module 701, a scheme determining module 702, and a driving module 703.
The acquisition module 701 is used for acquiring overlay error distribution data, wherein the overlay error distribution data is the sum of the average value and three times of standard deviation of the absolute value of the overlay error, the overlay error is the coordinate difference between the photoetching pattern and the reference pattern of each acquisition point, and each coefficient is a compensation parameter in a polynomial formula of the overlay error distribution data;
The scheme determining module 702 is configured to obtain a target stress compensation scheme through a stress compensation model that is built in advance based on overlay error distribution data, where the stress compensation scheme includes a stress actuator group and compensation stresses executed by the stress actuators, and the stress compensation model includes association relations between compensation stresses and compensation parameters corresponding to the stress actuator groups;
a drive module 703 for driving the stress actuator to apply a compensation stress to the reticle based on the target stress compensation scheme.
Therefore, through a pre-established model, the compensation stress executed by each stress executor required by the compensation of the overlay error is reversely obtained through the overlay error distribution data, and further, the mask deformation is caused by applying the compensation stress to the mask, so that the compensation of the overlay error in the lithography process is realized, and the overlay error of the lithography process can be reduced.
Optionally, the other photoetching process overlay error compensation device further comprises a model building module, an overlay error distribution data and a stress compensation model, wherein the model building module is used for obtaining overlay error distribution data respectively corresponding to the plurality of stress actuator groups under different compensation stresses, building an association relation between the compensation stresses and compensation parameters based on the compensation stresses and the overlay error distribution data, and building the stress compensation model based on the association relation between the compensation stresses and the compensation parameters.
Optionally, the model building module is specifically configured to obtain alignment errors corresponding to the plurality of stress executors under different compensation stresses, and determine compensation parameters in the alignment error formula by fitting the alignment errors to obtain alignment error distribution data.
Optionally, the scheme determining module 702 is specifically configured to extract a target item including a higher order item in the overlay error distribution data based on the overlay error distribution data, and obtain a target stress compensation scheme for compensating the target item through a pre-established stress compensation model.
Optionally, the other photoetching process overlay error compensation device further comprises an alarm module, wherein the alarm module is used for monitoring the compensated overlay residual error, and outputting alarm information if the continuous times of the overlay residual error larger than a preset threshold value are larger than preset times.
Optionally, the other photoetching process overlay error compensation device further comprises a visualization module, wherein the visualization module is used for determining compensated target compensation parameters based on the compensation stress in the target stress compensation scheme and the association relation between the compensation stress corresponding to the target stress compensation scheme and the compensation parameters, and displaying error compensation distribution of each acquisition point in a vector diagram mode based on the target compensation parameters.
In addition, the embodiment of the application also provides a photoetching machine, which comprises a controller and a stress actuator, wherein the controller is electrically connected with the stress actuator, and the controller is used for driving the stress actuator according to the step of photoetching process alignment error compensation.
Alternatively, as shown in fig. 3, the lithography machine includes 16 stress actuators, the stress actuators are symmetrically disposed around the mask, and every 4 stress actuators are disposed on the same side of the mask.
Alternatively, the stress actuator may be a piezoelectric actuator.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment is mainly described in a different point from other embodiments. In particular, for the apparatus embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points. The above described device embodiments are merely illustrative, wherein elements illustrated as separate elements may or may not be physically separate, and elements illustrated as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
The foregoing is only one specific embodiment of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the technical scope of the present application should be included in the scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims (9)
1. A method for compensating overlay error in a lithographic process, the method comprising:
The method comprises the steps of obtaining overlay error distribution data, wherein the overlay error distribution data is the sum of the average value and three times of standard deviation of the absolute value of an overlay error, and the overlay error is the coordinate deviation between a photoetching pattern and a reference pattern of each acquisition point;
Based on the overlay error distribution data, a target stress compensation scheme is obtained through a pre-established stress compensation model, wherein the stress compensation scheme comprises a stress actuator group and compensation stress executed by the stress actuator, and the stress compensation model comprises association relations between compensation stress and compensation parameters corresponding to the stress actuator groups;
Driving a stress actuator to apply a compensating stress to the reticle based on the target stress compensation scheme;
Monitoring the compensated overlay residual error;
and if the continuous times of the overlay residual errors larger than the preset threshold value are larger than the preset times, outputting alarm information.
2. The method of claim 1, wherein the stress compensation model is established by:
acquiring alignment error distribution data corresponding to the stress executor groups under different compensation stresses respectively;
Based on the compensation stress and the overlay error distribution data, establishing an association relation between the compensation stress and compensation parameters;
and establishing a stress compensation model based on the alignment error distribution data respectively corresponding to the plurality of stress executor groups under different compensation stresses and the association relation between the compensation stresses and the compensation parameters.
3. The method of claim 2, wherein the obtaining overlay error distribution data for each of the plurality of stress actuator groups under different compensation stresses comprises:
Acquiring corresponding alignment errors of the stress executor groups under different compensation stresses respectively;
And determining compensation parameters in the overlay error formula by utilizing the overlay error fitting overlay error formula to obtain overlay error distribution data.
4. The method according to claim 1, wherein the obtaining a target stress compensation scheme based on the overlay error distribution data by a pre-established stress compensation model comprises:
Extracting a target item in the overlay error distribution data based on the overlay error distribution data, wherein the target item is a high-order item with the frequency more than or equal to 3;
And obtaining a target stress compensation scheme for compensating the target item through a pre-established stress compensation model.
5. The method according to claim 1, wherein after obtaining a target stress compensation scheme by a pre-established stress compensation model based on the overlay error distribution data, the method further comprises:
Determining a compensated target compensation parameter based on the compensation stress in the target stress compensation scheme and the association relation between the compensation stress corresponding to the target stress compensation scheme and the compensation parameter;
and displaying error compensation distribution of each acquisition point in the form of a vector diagram based on the target compensation parameters.
6. The photoetching process alignment error compensation device is characterized by comprising an acquisition module, a scheme determination module, a driving module and an alarm module;
The system comprises an acquisition module, an overlay error distribution data acquisition module, a compensation module and a correction module, wherein the acquisition module is used for acquiring overlay error distribution data, the overlay error distribution data is the sum of the average value and three times of standard deviation of the absolute value of the overlay error, the overlay error is the coordinate difference between the photoetching pattern and the reference pattern of each acquisition point, and each coefficient is a compensation parameter in a polynomial formula of the overlay error distribution data;
The scheme determining module is used for obtaining a target stress compensation scheme through a pre-established stress compensation model based on the overlay error distribution data, wherein the stress compensation scheme comprises a stress executor group and compensation stress executed by the stress executor, and the stress compensation model comprises association relations between the compensation stress and compensation parameters corresponding to the stress executor groups;
the driving module is used for driving the stress executor to apply compensation stress to the mask plate based on the target stress compensation scheme;
The system comprises an alarm module, a compensation module and a control module, wherein the alarm module is used for monitoring the compensated overlay residual error, and outputting alarm information if the continuous times of the overlay residual error larger than a preset threshold value are larger than preset times.
7. A lithography machine is characterized by comprising a controller and a stress actuator;
the controller is electrically connected with the stress actuator;
the controller is configured to drive the stress actuator according to the step of photolithography process overlay error compensation according to any one of claims 1-5.
8. The lithography machine of claim 7, wherein the lithography machine comprises 16 stress actuators, wherein the stress actuators are symmetrically disposed around the reticle, and wherein every 4 stress actuators are disposed on the same side of the reticle.
9. The lithographic apparatus of claim 7, wherein the stress actuator is a piezoelectric actuator.
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