CN119024580B - Full-optical modulation dual-wavelength single-pass optical switch implementation system - Google Patents
Full-optical modulation dual-wavelength single-pass optical switch implementation systemInfo
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- CN119024580B CN119024580B CN202411362569.2A CN202411362569A CN119024580B CN 119024580 B CN119024580 B CN 119024580B CN 202411362569 A CN202411362569 A CN 202411362569A CN 119024580 B CN119024580 B CN 119024580B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/009—Thermal properties
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- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention belongs to the technical field of super-surface optical field modulation, and discloses a full-optical-modulation dual-wavelength single-pass optical switch implementation system. The system comprises a light source unit, a light pretreatment unit, a first beam splitter, an objective lens, a sample to be tested, a first lens and a detection unit which are sequentially arranged, wherein three beams of light rays with different wavelengths are arranged in the light source unit, the light pretreatment unit is used for carrying out pretreatment on the three beams of light rays with different wavelengths after combining the beams of light rays, then the pretreated light rays are converged on the beam splitter, the first beam splitter is used for transmitting light rays from the light pretreatment unit to the objective lens, the objective lens is used for irradiating the light rays on the surface of the sample to be tested, the sample to be tested reflects the light rays and returns the light rays to the first beam splitter through the objective lens, the first beam splitter reflects the light rays to enter the first lens, and parallel light rays emitted from the first lens enter the detection unit, and the detection unit is used for measuring the light intensity of working light and modulated light.
Description
Technical Field
The invention belongs to the technical field of super-surface optical field modulation, and particularly relates to a system for realizing a full-optical modulation dual-wavelength single-pass optical switch.
Background
The optical switch is a key element capable of realizing high-speed switching and control in optical signals, and has the potential of being widely applied in the fields of optical communication, optical calculation, optical sensing and the like. The optical switch has the functions of optical path selection, wavelength conversion, optical packet switching and the like in the optical communication network, and improves the transmission efficiency and the reliability of the optical communication network. In optical computation, the optical switch can be used for routing and processing optical signals, and high-speed processing and transmission of the optical signals are realized. Traditional optical switches rely primarily on electrical or thermal constraints to achieve regulation of optical signals. However, these methods have the disadvantages of high energy consumption, low speed, large size and the like, and limit the application of the methods in the fields of integrated optical circuits and the like.
In recent years, the full light modulation technology has attracted attention as a new light control system. The full optical modulation technology directly modulates an optical signal by utilizing an optical effect, does not need to use electric modulation or thermal modulation, has the advantages of high speed, low energy consumption, small size, easy integration and the like, and is considered to be an important technical direction in next-generation optical communication and optical calculation. However, the current full optical modulation technology still faces some challenges in practical application, one of which is that full optical modulation cannot modulate multiple wavelengths simultaneously.
Disclosure of Invention
Aiming at the defects or improvement demands of the prior art, the invention provides a full-optical-modulation dual-wavelength single-pass optical switch implementation system, which solves the technical problem that a full optical modulation scheme cannot modulate different switch states for a plurality of different wavelengths at the same time.
In order to achieve the above object, according to one aspect of the present invention, there is provided a dual-wavelength single-pass optical switch implementation system of full optical modulation, which is characterized in that the system comprises a light source unit, a light preprocessing unit, a first beam splitter, an objective lens, a sample to be tested, a first lens and a detection unit, which are sequentially arranged, wherein:
Three beams of light rays with different wavelengths are arranged in the light source unit, two beams of light rays are working light, one beam of light rays is used as modulated light, the light ray pretreatment unit is used for carrying out pretreatment on the three beams of light rays after being combined, then the pretreated light rays are converged on the beam splitter, the first beam splitter is used for transmitting the light rays from the light ray pretreatment unit to the objective lens, the objective lens is used for irradiating the light rays on the surface of a sample to be detected, the sample to be detected reflects the light rays and returns the light rays to the first beam splitter through the objective lens, the first beam splitter reflects the light rays to enter the first lens, and parallel light rays emitted from the first lens enter the detection unit, and the detection unit is used for measuring the light intensity of the working light and the modulated light;
The device is characterized in that the to-be-measured sample is provided with a nano structure which is in an array distribution cube, the power of the modulated light is adjusted in the measurement process to change the radiation power density of the light irradiated on the surface of the to-be-measured sample, the temperature of the to-be-measured sample is further changed, and the scattering intensity of the to-be-measured sample is further changed, so that the light intensity of two beams of working light in the detection unit is adjusted, and meanwhile, the change trend of the light intensity of the two beams of working light is opposite through the structural dimension of the nano structure, so that the modulation of the modulated light on and off processes of the two beams of working light with different wavelengths is realized.
Further preferably, the substrate of the sample to be tested is a silicon-on-insulator structure, and the nanostructure is disposed on the silicon-on-insulator structure.
Further preferably, the light preprocessing unit includes a speckle removing unit, a polarizing plate and a second lens, which are sequentially arranged, wherein the speckle removing unit is used for removing speckle noise in the light beam to realize homogenization treatment of the light beam, the polarizing plate is used for adjusting the polarization state of the light beam, and the second lens is used for converging the light from the polarizing plate into the beam splitter.
Further preferably, the speckle removing unit includes a third lens for converging light from the light source unit into the speckle component, a speckle removing component for removing speckle, and a fourth lens for converting light from the speckle component into parallel light beams to exit.
Further preferably, the detection unit includes a second beam splitter, a third beam splitter, a first detection module, a second detection module, and a third detection module, where the second beam splitter is disposed behind the first lens, and is configured to split the light exiting from the first lens into two beams, one beam enters the first detection module, one beam enters the third beam splitter, and the third beam splitter is also configured to split the light into two beams, one beam enters the second detection module, and one beam enters the third detection module.
Further preferably, the first detection module, the second detection module and the third detection module have the same structure, and each of the first detection module, the second detection module and the third detection module includes a filter and a detector, wherein the filter is used for filtering light with a specific wavelength, and the detector is used for receiving light emitted from the filter.
Further preferably, the light source unit is provided therein with a first working light source, a second working light source and a modulated light source, and a power regulator for regulating the power of the modulated light is provided behind the modulated light source.
Further preferably, a fifth beam splitter and a fourth beam splitter are respectively disposed behind the first working light source and the second working light source, a reflecting mirror is disposed behind the power regulator, and is used for reflecting the modulated light into the fourth beam splitter, the fourth beam splitter is used for reflecting the second working light and the modulated light into the fifth beam splitter, and the fifth beam splitter is used for combining the first working light, the second working light and the modulated light into one beam.
Further preferably, the structural dimensions of the nanostructure are determined as follows:
(a) Determining the change trend of the scattering cross section of the corresponding nano structure according to the on and off states of the two beams of working light, wherein the normally open state corresponds to the trend of the scattering cross section descending, and the normally closed state corresponds to the trend of the scattering cross section ascending;
(b) Constructing a database of one-to-one correspondence between scattering cross sections of the nano structures and structural dimensions of the nano structures, wherein the structural dimensions of the nano structures comprise length, width and height of the nano structures;
(c) Searching the structural size of the corresponding nano structure when the scattering cross section of the two beams of working light has opposite variation trend in the database in the step (b).
Further preferably, in step (b), the nanostructure scatter profile is calculated according to the following formula:
Where C sca_b is the back-scattering cross section of the nanostructure, L, W and H are the length, width and height of the nanostructure, respectively, λ is the wavelength, ε p and ε m are the complex dielectric constants of the nanostructure and the environment, respectively, and θ is the back-scattering detection angle.
In general, compared with the prior art, the above technical solution conceived by the present invention has the following beneficial effects:
1. According to the invention, three beams of light with different wavelengths and a nano structure of an array are adopted, the radiation power density of the whole light beam is regulated through the modulated light in the three beams of light, the temperature of the surface of the nano structure is indirectly controlled, the refractive index coefficient of the nano structure is regulated, the scattering cross section of the nano structure is changed, the scattering intensity of the light with different wavelengths in the reflected light of the nano structure is changed, meanwhile, the on-off states of two beams of working light are controlled through setting the size of the nano structure, and the modulation of the modulated light on-off states of the two beams of working light with different wavelengths is realized;
2. The structural dimension of the nano structure is set according to two working lights with different wavelengths, and meanwhile, the structural characteristics are required to ensure that the variation trend of scattering cross sections formed by the two working lights is opposite, and further, the variation trend of the light intensity of the two working lights is opposite;
3. the substrate of the sample to be tested is an insulator, and has a lower heat conductivity coefficient, so that the dissipation of heat energy absorbed by the nanostructure can be reduced, and the nanostructure on the top layer can generate obvious temperature rise;
4. The invention adopts three beams with different wavelengths, and two modulated beams have different wavelengths, so that the two beams can be in opposite switch states, and the function of single pass is realized; the third beam of modulated light with controllable power is different from the first two beams in wavelength, so that the modulated light beam and the modulated light beam in the subsequent detection process can be well separated, and the light intensity signal overlapping between the modulated light beam and the modulated light beam is avoided;
5. The invention can realize independent modulation and control of two optical signals with different wavelengths, adopts a full optical modulation method, utilizes the photo-thermal tuning characteristic of the material, has the advantage of simultaneous control of two wavelengths, and provides a new thought and method for realizing a high-speed and low-energy-consumption optical switch.
Drawings
FIG. 1 is a schematic diagram of a dual wavelength single pass optical switch implementation system for all optical modulation constructed in accordance with a preferred embodiment of the present invention;
FIG. 2 is a graphical representation of the topographical parameters of a nanostructure constructed in accordance with a preferred embodiment of the present invention;
FIG. 3 is an alternative arrangement of periodic nanostructure portions constructed in accordance with a preferred embodiment of the present invention, wherein (a) is one way of the nanostructure array, (b) is another way of the nanostructure array, and (c) is yet another way of the nanostructure array;
FIG. 4 is a temperature field distribution of used silicon nanostructures at high modulated beam power densities constructed in accordance with a preferred embodiment of the invention;
FIG. 5 is a back-scattering cross-section of a used silicon nanostructure constructed in accordance with a preferred embodiment of the present invention at different wavelengths, different temperatures;
FIG. 6 is a back-scattering cross-section of a silicon nanostructure constructed in accordance with a preferred embodiment of the present invention at a first operating wavelength;
FIG. 7 is a back-scattering cross-section of a silicon nanostructure constructed in accordance with a preferred embodiment of the present invention at a second operating wavelength;
Fig. 8 is an absorption cross section of a used silicon nanostructure constructed in accordance with a preferred embodiment of the present invention at different wavelengths and different temperatures.
FIG. 9 is a three wavelength field strength detection image at different modulated beam power densities constructed in accordance with a preferred embodiment of the present invention.
The same reference numbers are used throughout the drawings to reference like elements or structures, wherein:
200-first working light source, 201-second working light source, 202-modulated light source, 203-power regulator, 204-reflecting mirror, 205-fourth beam splitter, 206-fifth beam splitter, 207-third lens, 208-speckle removing component, 209-fourth lens, 210-polarizer, 211-second lens, 212-first beam splitter, 213-objective lens, 214-sample to be measured, 215-first lens, 216-second beam splitter, 217-first filter, 218-first detector, 219-third beam splitter, 220-second filter, 221-second detector, 222-third filter, 223-third detector.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
As shown in fig. 1, in the implementation system of the full-optical modulation dual-wavelength single-pass optical switch provided by the present invention, specifically, referring to fig. 1, a first working light source 200 and a second working light source 201 respectively generate light beams corresponding to the first working light and the second working light, a modulated light source 202 radiates the modulated light beam, and if the modulated light source 202 cannot actively adjust the radiation light power, an optional power regulator 203 is matched to adjust the power density of the modulated light, and in this embodiment, a continuously adjustable optical attenuation sheet is adopted by the power regulator;
The three-beam optical system comprises a reflecting mirror 204, a fourth beam splitter 205 and a fifth beam splitter 206, a third lens 207, a speckle removing assembly 208 and a fourth lens 209 which form a speckle removing unit together and are used for realizing speckle removing and beam expanding functions and converting the speckle removing and the beam expanding functions into parallel beams, a polaroid 210 for adjusting the polarization state of the beams, a second lens 211 and an objective lens 213 for projecting the beams onto the nano-structure surface of a sample to be detected, and a reflected light field which is collected by the same objective lens 213 and propagates to a detection module through a first beam splitter 212 and a first lens 215;
the second beam splitter 216 and the third beam splitter 219 cooperate with the first filter 217, the second filter 220 and the third filter 222 to separate the light beams of the three wavelengths, and the first detector 218, the second detector 221 and the third detector 223 detect the spatial intensity distribution, and the first filter 217, the second filter 220 and the third filter 222 only allow the light of the specific wavelength to pass through.
In the preferred example, only the reflective optical switch is shown, and the transmissive optical switch can also achieve the same function.
The arrangement of the specific structure in the above system will be described below.
(1) Selection of wavelength of operating light
In one embodiment of the invention, two operating wavelengths to be switched are selected, the two operating wavelengths can be selected according to practical requirements, the first operating light is generated by the light source 200 at a normally off wavelength, and the second operating light is generated by the light source 201 at a normally on wavelength.
Specifically, in the present preferred example, the operating wavelength is set to 414nm, and the operating wavelength is set to 445nm.
(2) And switching and converting the two working wavelengths according to the requirement, and reversely determining the morphological parameters of the silicon material nanostructure in the optical switching device.
The method of determining the dimensions of the nanostructure will be described below in terms of reflecting light from the nanostructure.
(A) Determining the change trend of the scattering cross section of the corresponding nano structure according to the on and off states of the two beams of working light, wherein the normally open state corresponds to the descending trend of the scattering cross section, and the normally closed state corresponds to the ascending trend of the scattering cross section;
(b) Constructing a database of one-to-one correspondence between the scattering cross section of the nanostructure and the structural dimension of the nanostructure, wherein the structural dimension of the nanostructure comprises the length, width and height of the nanostructure, and the scattering cross section has the following calculation expression:
Wherein C sca_b represents the back-scattering cross section of the nanostructure, L, W, H represents the length, width, height, respectively, of the nanostructure, λ represents the wavelength, ε p and ε m represent the complex dielectric constants of the nanostructure and the environment, respectively, θ represents the back-scattering detection angle, typically-180 °.
For the mode of transmitting light rays by the nano structure, the calculation formula of the front scattering section is adopted for calculating the scattering section, and the calculation formula is as follows:
Epsilon p and epsilon m can be further described as
”'
εp＝εp+iεp
”'
εm＝εm+iεm
Epsilon p 'and epsilon p "represent the real and imaginary parts of the nanostructure complex dielectric constant, respectively, and epsilon m' and epsilon m" represent the real and imaginary parts of the nanostructure complex dielectric constant, respectively. The real and imaginary parts ε' and ε "of the complex refractive index of a material can be described as
ε'=n2-k2
ε”=2*n*k
Where n and k represent the real and imaginary parts of the complex refractive index of the material, respectively. The value of the complex refractive index n p+kp of the silicon material at different wavelengths lambda and temperatures T can be calculated by the following expression
np(λ,T)＝na(λ)+δa(λ)*T
Wherein n α is a temperature independent term of the real part of the refractive index coefficient, delta α is a temperature dependent term of the real part of the refractive index coefficient.
(C) Under the condition of ensuring that the variation trend of the scattering cross sections of the two beams of light obtained by calculation in the step (a) is opposite, searching the structural size of the corresponding nano structure in the database in the step (b).
Specifically, the applicable nanostructure morphology parameters can be found based on a scattering cross section database prepared in advance, and different morphology parameter combinations can be traversed to determine the applicable nanostructure morphology parameters, wherein the monomer nanostructure morphology parameters selected in the preferred example are l=700 nm, w=90 nm, and h=45 nm, as shown in fig. 2.
In one embodiment of the invention, in order to improve the photo-thermal conversion efficiency of the silicon nanostructure, for the reflective application scene, the material can be a silicon-on-insulator structure, namely, the base of the nanostructure is a silicon oxide layer and a silicon layer from top to bottom, and can also be a single-layer silicon oxide substrate, and for the transmissive application scene, only a single-layer silicon oxide substrate can be selected, so that two working beams can well penetrate the substrate.
In one embodiment of the present invention, the geometry of the single nanostructure is smaller, and for an application scenario requiring a large-area modulation optical switch, the selected single nanostructure may be arrayed in a periodic array manner with better partial effect, such as an orthogonal two-dimensional grating, an oblique two-dimensional single structure grating, and an oblique two-dimensional double structure grating, as shown in fig. 3, but not limited thereto.
In one embodiment of the present invention, the back-scattering cross-section, the front-scattering cross-section, the total scattering cross-section and the absorption cross-section of the selected nanostructure at different wavelengths and different temperatures are calculated by using a finite element method, and the optical parameter-refractive index change of the silicon material at different temperatures needs to be considered, and the back-scattering cross-section is shown in fig. 5.
(3) Selection of modulated light
The wavelength of the modulated light beam is selected, and the wavelength of the modulated light beam is different from that of the first working light and the second working light, so that the light beams corresponding to the three wavelengths can be properly separated after being combined, and the crosstalk of optical signals among different wavelengths is avoided.
Preferably, the wavelength of the modulated light is calculated at the absorption cross section of the nanostructure, and the strong place is found, so that the photo-thermal efficiency can be improved, the power density requirement of the modulated light beam is reduced, the wavelength of the modulated light beam is set to be 532nm in the preferred example, and the distribution of the photo-thermal temperature field is shown in fig. 4.
The nanostructure absorption cross section calculation method is as follows
Wherein Cabs represents the absorption cross section of the nanostructure, the absorption cross section is shown in fig. 8;
The radiation power density of the modulated light is adjusted, and the switch of the corresponding light beams of the first working light and the second working light is controlled.
As shown in fig. 9, specifically, the radiation power density of the modulated light is adjusted to indirectly control the temperature of the silicon nanostructure, and the refractive index coefficients of the silicon material at different temperatures are different, so that the scattering cross section of the nanostructure is changed, and the scattering cross section directly determines the scattering intensity, thereby realizing the all-optical regulation and control optical switch for the first working light and the second working light, and the switching states of the first working light and the second working light are opposite, that is, the dual-wavelength single-pass optical switch.
Specifically, the scattering cross section at different temperatures of the first working light is shown in fig. 6, the temperature rise scattering is enhanced, so that the wavelength is in a normally closed state, and the scattering cross section at different temperatures of the second working light is shown in fig. 7, the temperature rise scattering is reduced, so that the wavelength is in a normally open state.
The first working light, the second working light and the light beams corresponding to the modulated light beams are separated by utilizing a wavelength filter in the detection unit, and the spatial intensity distribution of the light beams corresponding to the different modulated light radiation power densities is detected by utilizing three detectors, as shown in fig. 9.
In one embodiment of the invention, consider a scenario in which the proposed method of the invention is easily demonstrated, the modulated beam having a diameter of half that of the first working light and the second working light. When the modulated light beam is in a low power state, the first working light is in a normally closed state, the intensity detected by the detector is low, and the second working light is in a normally open state, the intensity detected by the detector is high, as shown in an upper image in fig. 9. When the modulated light beam is in a high power state, the overlapping area of the first working light and the modulated light beam is converted into an on state, the intensity of the working light beam at the overlapping area is enhanced, the intensity of the non-overlapping area is lower, the overlapping area of the second working light and the modulated light beam is converted into an off state, the intensity of the working light beam at the overlapping area is reduced, and the intensity of the non-overlapping area is maintained to be higher, as shown in a lower image in fig. 9.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. The utility model provides a full light modulation's dual wavelength single logical optical switch implementation system which characterized in that, this system includes light source unit, light preprocessing unit, first beam splitter, objective, sample to be measured, first lens and the detection unit that sets gradually, wherein:
Three beams of light rays with different wavelengths are arranged in the light source unit, two beams of light rays are working light, one beam of light rays is used as modulated light, the light ray pretreatment unit is used for carrying out pretreatment on the three beams of light rays after being combined, then the pretreated light rays are converged on the beam splitter, the first beam splitter (212) is used for transmitting the light rays from the light ray pretreatment unit to the objective lens (213), the objective lens (213) is used for irradiating the light rays on the surface of a sample (214) to be detected, the sample (214) to be detected reflects the light rays and returns the light rays to the first beam splitter (212) through the objective lens (213), the first beam splitter (212) reflects the light rays into the first lens (215), and parallel light rays emitted from the first lens (215) enter the detection unit, and the detection unit is used for measuring the light intensity of the working light rays and the modulated light rays;
The device is characterized in that the to-be-measured sample (214) is provided with a nano structure which is in an array distribution cube, the power of the modulated light is adjusted in the measuring process to change the radiation power density of the light irradiated on the surface of the to-be-measured sample, and then the scattering intensity of the to-be-measured sample is changed, so that the light intensity of two beams of working light in the detection unit is adjusted, and meanwhile, the change trend of the light intensity of the two beams of working light is opposite by setting the structural size of the nano structure, so that the modulation of the modulated light to the switching process of the two beams of working light with different wavelengths is realized.
2. A dual wavelength single pass optical switch implementation system as claimed in claim 1, wherein said sample (214) to be tested is a silicon-on-insulator structure on which said nanostructures are disposed.
3. A dual wavelength single pass optical switch implementation system according to claim 1 or 2, wherein said light preprocessing unit comprises a speckle removing unit, a polarizing plate (210) and a second lens (211) arranged in sequence, said speckle removing unit is used for removing speckle noise in the light beam, homogenizing the light beam is implemented, said polarizing plate (210) is used for adjusting polarization state of the light beam, and said second lens (211) is used for converging the light from the polarizing plate into said beam splitter.
4. A dual wavelength single pass optical switch implementation system as claimed in claim 3, wherein said speckle removing unit comprises a third lens (207), a speckle removing assembly (208) and a fourth lens (209), said third lens (207) being adapted to concentrate light from the light source unit into said speckle removing assembly (208), said speckle removing assembly (208) being adapted to remove speckle, said fourth lens (209) being adapted to convert light from said speckle removing assembly into a parallel beam of light.
5. A dual wavelength single pass optical switch implementation system as claimed in claim 1 or 2, wherein said detection unit comprises a second beam splitter (216), a third beam splitter (219), a first detection module, a second detection module and a third detection module, said second beam splitter (216) being arranged behind said first lens (215) for splitting light exiting said first lens (215) into two beams, one beam entering said first detection module, one beam entering said third beam splitter, said third beam splitter (219) also being arranged for splitting light into two beams, one beam entering said second detection module and one beam entering said third detection module.
6. The system of claim 5, wherein the first detection module, the second detection module and the third detection module are identical in structure and each comprise a filter and a detector, the filter is used for filtering light with a specific wavelength, and the detector is used for receiving light emitted from the filter.
7. A dual wavelength single pass optical switch implementation system as claimed in claim 1 or 2, wherein a first working light source (200), a second working light source (201) and a modulating light source (202) are provided in said light source unit, and a power regulator (203) is provided behind said modulating light source (202) for regulating the power of said modulated light.
8. A dual wavelength single pass optical switch implementation system as claimed in claim 7, wherein a fifth beam splitter (206) and a fourth beam splitter (205) are arranged behind said first and second working light sources (200, 201), respectively, and a mirror (204) is arranged behind said power regulator (203) for reflecting modulated light rays into said fourth beam splitter (205), said fourth beam splitter (205) being arranged for reflecting second and modulated light rays into said fifth beam splitter (206), said fifth beam splitter (206) being arranged for combining the first working light, the second working light and the modulated light rays into one beam.
9. The dual wavelength single pass optical switch implementation system of claim 7, the method is characterized in that the structural dimension of the nanostructure is determined according to the following mode:
(a) Determining the change trend of the scattering cross section of the corresponding nano structure according to the on and off states of the two beams of working light, wherein the normally open state corresponds to the trend of the scattering cross section descending, and the normally closed state corresponds to the trend of the scattering cross section ascending;
(b) Constructing a database of one-to-one correspondence between scattering cross sections of the nano structures and structural dimensions of the nano structures, wherein the structural dimensions of the nano structures comprise length, width and height of the nano structures;
(c) Searching the structural size of the corresponding nano structure when the scattering cross section of the two beams of working light has opposite variation trend in the database in the step (b).
10. The dual wavelength single pass optical switch implementation system of claim 9 wherein in step (b) the nanostructure scattering cross-section is calculated according to the following formula:
Where C sca_b is the back-scattering cross section of the nanostructure, L, W and H are the length, width and height of the nanostructure, respectively, λ is the wavelength, ε p and ε m are the complex dielectric constants of the nanostructure and the environment, respectively, and θ is the back-scattering detection angle.
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| CN115857198A (en) * | 2022-11-21 | 2023-03-28 | 暨南大学 | Light modulation method and device of light modulation device |
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