CN119001400A

CN119001400A - Intelligent test analysis method and system for integrated circuit

Info

Publication number: CN119001400A
Application number: CN202411108954.4A
Authority: CN
Inventors: 张晖
Original assignee: Lianding Video Technology Shenzhen Co ltd
Current assignee: Lianding Video Technology Shenzhen Co ltd
Priority date: 2024-08-13
Filing date: 2024-08-13
Publication date: 2024-11-22

Abstract

The present invention relates to the field of electrical variable measurement, and in particular to an integrated circuit intelligent test and analysis method and system. The method comprises the following steps: performing integrated circuit normal electromagnetic field analysis on an integrated circuit to obtain the integrated circuit normal electromagnetic field; performing electrical signal change frequency calculation and component density analysis on the integrated circuit to obtain transmission electrical signal frequency change data and integrated circuit component density, and constructing a temperature model of component density influence on the integrated circuit, and performing variable temperature simulation on the integrated circuit normal electromagnetic field to obtain a variable temperature simulation electromagnetic field; performing transmission signal abnormal stability analysis on the variable temperature simulation electromagnetic field to obtain transmission signal abnormal stability; performing abnormal integrated circuit acquisition on the integrated circuit based on the abnormal stability of the transmission signal to obtain an abnormal integrated circuit result. The present invention performs intelligent testing on the integrated circuit by analyzing the impact of the component density of the integrated circuit and the frequency of the electrical signal on the normal electromagnetic field of the integrated circuit.

Description

Intelligent test analysis method and system for integrated circuit

Technical Field

The invention relates to the field of electric variable measurement, in particular to an integrated circuit intelligent test analysis method and system.

Background

With the development of integrated circuit technology, the design of the integrated circuit becomes more and more complex, and the modern integrated circuit integrates a very large number of transistors, so that the functions are more diversified, but a plurality of testing challenges are brought; the design of the highly integrated circuit sets makes the traditional testing method difficult to fully cover all functions and paths, the smaller transistors and the more compact layout increase the risk of generating defects in the manufacturing process, the intelligent testing analysis technology is required to carry out standardized testing procedures on the integrated circuits, the testing process is automated, the testing efficiency is improved, but related parameters of the integrated circuits are mutually influenced, and the lack of strategies can improve the abnormality identification positioning precision, so that the testing efficiency and the abnormality positioning are improved.

Disclosure of Invention

Accordingly, the present invention is directed to an intelligent testing and analyzing method and system for integrated circuits, which solve at least one of the above-mentioned problems.

In order to achieve the above purpose, the intelligent test analysis method for the integrated circuit comprises the following steps:

step S1: carrying out integrated circuit normal electromagnetic field analysis on the integrated circuit to obtain an integrated circuit normal electromagnetic field;

step S2: performing electric signal transmission processing on the integrated circuit to obtain transmission electric signal data; performing electric signal change frequency calculation on transmission electric signal data to obtain transmission electric signal change frequency data;

Step S3: performing component density analysis on the integrated circuit to obtain the component density of the integrated circuit; performing component density influence temperature model construction on the integrated circuit based on the component density of the integrated circuit and the frequency change data of the transmission electric signals to obtain a component density influence temperature model;

Step S4: performing variable-temperature simulation on the normal electromagnetic field of the integrated circuit based on the component density influence temperature model to obtain a variable-temperature simulation electromagnetic field; carrying out abnormal stability analysis on the transmission signal of the variable-temperature simulation electromagnetic field to obtain abnormal stability of the transmission signal; and acquiring an abnormal integrated circuit of the integrated circuit based on the abnormal stability of the transmission signal to obtain an abnormal integrated circuit result.

According to the invention, the electromagnetic field distribution condition of the integrated circuit in a normal working state can be obtained by carrying out normal electromagnetic field analysis on the integrated circuit, so that the influence of the electromagnetic field on the integrated circuit can be known, basic data is provided for subsequent signal transmission and temperature simulation analysis, a foundation is laid for subsequent temperature change simulation and anomaly detection, and references are provided for understanding the electromagnetic field change of the integrated circuit at different temperatures; the electric signal transmission processing and the signal change frequency calculation are beneficial to grasping the transmission condition of the electric signal in the integrated circuit, different transmission conditions can be analyzed by calculating the change frequency of the electric signal, data support is provided for researching the stability of the integrated circuit and optimizing the transmission efficiency, and the information has important significance for understanding the running state of the integrated circuit and evaluating the performance of the integrated circuit; component density analysis and component density influence temperature model construction can help to know the influence relationship of the distribution density of components in an integrated circuit on temperature, and the temperature distribution of the integrated circuit under different component densities can be simulated and predicted by constructing a model, so that the potential hot risk area in the circuit can be predicted; based on the variable-temperature simulation of the component density influence temperature model, the influence of temperature change on electromagnetic field and transmission signal stability can be analyzed, the performance and stability of an integrated circuit at different temperatures can be studied through the variable-temperature simulation electromagnetic field, abnormal stability analysis of the transmission signal can identify the abnormal integrated circuit, a target is provided for subsequent fault analysis and repair, and a strategy capable of improving abnormal identification positioning accuracy is obtained, so that testing efficiency and abnormal positioning are improved.

Preferably, step S1 comprises the steps of:

step S11: performing space blocking processing on the integrated circuit to obtain an integrated circuit blocking space;

Step S12: carrying out normal transmission block edge potential difference acquisition on the integrated circuit block space to obtain a block edge potential difference;

step S13: calculating the intensity of the blocking center electric field of the potential difference of the blocking edge to obtain the intensity of the blocking center electric field;

Step S14: and carrying out integrated circuit normal electromagnetic field analysis on the integrated circuit based on the intensity of the blocking center electric field to obtain the integrated circuit normal electromagnetic field.

According to the invention, the integrated circuit is subjected to space blocking processing, the complex integrated circuit structure is decomposed into a plurality of independent space regions, the complexity of electromagnetic field analysis is simplified, the blocking processing method can effectively reduce the calculated amount, improve the analysis efficiency, and lay a foundation for the subsequent electromagnetic field analysis; the potential difference between each block area can be obtained by carrying out normal transmission block edge potential difference acquisition on the integrated circuit block space, and the potential difference data reflect the potential distribution situation of the integrated circuit between different areas in a normal working state, so that necessary information is provided for subsequent electric field intensity calculation; the center electric field intensity of each segmented region can be obtained by computing the segmented center electric field intensity of each segmented edge potential difference, the electric field intensity is an important index for measuring the electric field intensity, and the distribution condition of the electric field inside the integrated circuit can be known more deeply by computing the center electric field intensity of each segmented region, so that more accurate data can be provided for subsequent electromagnetic field analysis; the integrated circuit is subjected to integrated circuit normal electromagnetic field analysis based on the center electric field intensity of the blocks, so that complete electromagnetic field distribution of the integrated circuit in a normal working state can be obtained, an electromagnetic field model of the whole integrated circuit can be constructed by integrating the center electric field intensity of each block, an important reference basis is provided for further analyzing the electromagnetic characteristics of the integrated circuit, the integrated circuit is subjected to space block processing, potential difference and electric field intensity of each block are analyzed layer by layer, and finally the normal electromagnetic field distribution of the integrated circuit can be obtained. The block analysis method effectively simplifies the calculation process, improves the analysis efficiency, and provides more accurate data support for subsequent electromagnetic field simulation and anomaly detection.

Preferably, step S2 comprises the steps of:

step S21: performing electric signal transmission processing on the integrated circuit to obtain transmission electric signal data;

step S22: level data acquisition is carried out on transmission signal data to obtain transmission electric signal level data;

step S23: performing high-low level conversion time analysis on the level data of the transmission power signals to obtain high-low level conversion time data;

Step S24: and performing electric signal change frequency calculation on the high-low level conversion time data to obtain transmission electric signal change frequency data.

The invention can acquire signal transmission data in the integrated circuit by carrying out electric signal transmission processing on the integrated circuit, the data reflect the signal transmission condition of the integrated circuit in the working state, and original data is provided for subsequent signal analysis; the level data of the transmission signal data are acquired, the level value of each signal can be obtained, the level data reflect the strength change of the signal, basic information is provided for the subsequent analysis of the change frequency and time of the signal, the waveform and the strength characteristics of the electric signal in the circuit can be found, and therefore the signal integrity and the performance of the circuit are evaluated; by analyzing the high-low level transition time of the transmission power signal level data, the transition time of the signal from the high level to the low level or from the low level to the high level can be obtained. The transition time data reflects the rate of signal change, provides important information for understanding the signal transmission speed and performance of the integrated circuit, and is helpful for finding the transition characteristics of the electrical signals in the circuit; the frequency of signal change can be obtained by calculating the frequency of electric signal change of high and low level conversion time data, the signal change frequency reflects the speed of signal transmission and is an important index for measuring the working speed of an integrated circuit, the working frequency and the performance of the integrated circuit can be known by analyzing the signal change frequency, and the method is beneficial to optimizing the signal transmission quality of the circuit and ensuring the stability and the reliability of the circuit.

Preferably, step S3 comprises the steps of:

step S31: performing surface topology scanning on the integrated circuit to obtain surface topology scanning data of the integrated circuit;

Step S32: performing component density analysis on the integrated circuit based on the integrated circuit surface topology scanning data to obtain the integrated circuit component density;

step S33: drawing a curve of the integrated circuit based on the density of the integrated circuit components and the frequency change data of the transmission electric signals to obtain a current component temperature change curve;

Step S34: and constructing a component density influence temperature model of the integrated circuit based on the current component temperature change curve to obtain the component density influence temperature model.

The invention can obtain three-dimensional structure information of the surface of the integrated circuit by carrying out surface topology scanning on the integrated circuit, wherein the three-dimensional structure information comprises the size, the shape and the position of the component, the data provide a basis for the subsequent component density analysis and visual information for understanding the physical structure of the integrated circuit; the method comprises the steps of carrying out component density analysis on an integrated circuit based on the surface topology scanning data of the integrated circuit, so that the density of components in the integrated circuit, namely the number of components in unit area, can be obtained, wherein the component density is one of important factors influencing the temperature of the integrated circuit, and the higher the component density is, the more heat accumulation in unit area is, and the higher the temperature is, so that the step is helpful for finding out the non-uniformity of component distribution in the circuit, and evaluating the potential influence of the component density on the circuit performance and the temperature; drawing a curve of the integrated circuit based on the density of the components of the integrated circuit and the frequency change data of the transmitted electric signals, so as to obtain a temperature change curve of the current components, wherein the curve reflects the temperature change trend of the current components under different component densities, and the influence degree of the component densities on the temperature and the temperature change rule under different component densities can be known by analyzing the curve, so that the influence trend of the component densities on the temperature is analyzed; and (3) constructing a temperature model of the component density influence of the integrated circuit based on the current component temperature change curve, and establishing a mathematical model for describing the influence of the component density on the temperature. The model can predict temperature change under different component densities, provides reference for designing and optimizing an integrated circuit, ensures the stability and reliability of the circuit under different working modes, and can establish a complete component density influence temperature model by carrying out topology scanning, component density analysis, curve drawing and model construction on the surface of the integrated circuit.

Preferably, step S32 comprises the steps of:

Step S321: analyzing the integrated circuit geometric data of the integrated circuit surface topology scanning data to obtain the integrated circuit geometric data;

Step S322: constructing a three-dimensional model of the integrated circuit based on the geometric data of the integrated circuit to obtain a three-dimensional model of the integrated circuit;

step S323: extracting component geometric features from the integrated circuit geometric data to obtain integrated circuit component feature data;

Step S324: performing component identification on the integrated circuit three-dimensional model based on the integrated circuit component characteristic data to obtain integrated circuit component identification data;

Step S325: acquiring the component spacing of the integrated circuit component identification data to obtain integrated circuit component spacing data;

Step S326: and calculating the component density of the integrated circuit component spacing data to obtain the integrated circuit component density.

According to the invention, the integrated circuit is built based on the geometric data of the integrated circuit, so that a complete three-dimensional model of the integrated circuit can be obtained, the three-dimensional model can more intuitively display the structure of the integrated circuit, the space relation among components can be conveniently analyzed, and important references are provided for subsequent component identification and interval calculation; component geometric feature extraction is carried out on the integrated circuit geometric data, so that different types of components in the integrated circuit can be identified, geometric features of each component, such as length, width and height, are extracted, and the component feature data provide necessary information for subsequent component identification and density calculation; the integrated circuit three-dimensional model is marked based on the integrated circuit component characteristic data, each component can be marked in the three-dimensional model, the identification and analysis are convenient, the component identification can effectively distinguish different types of components, a foundation is provided for subsequent component spacing calculation, the subsequent component spacing measurement and density analysis are convenient, and meanwhile, important parameters are provided for the performance analysis and optimization of the circuit; the component spacing of the integrated circuit component identification data is obtained, the distance between different components can be calculated, the component spacing is one of important factors influencing the temperature of the integrated circuit, and the smaller the spacing is, the more heat is accumulated, and the higher the temperature is; the component density calculation is carried out on the integrated circuit component spacing data, the density of components in the integrated circuit can be obtained, the non-uniformity of component distribution in the circuit can be found, the potential influence of the component density on the circuit performance, heat dissipation and reliability is evaluated, the layer-by-layer analysis of the integrated circuit surface topology scanning data can be carried out, the geometric information, the three-dimensional model, the component characteristic data, the component identification data and the component spacing data of the integrated circuit can be obtained, the data provides complete support for the subsequent component density calculation, and important reference basis is provided for understanding the physical structure and the performance of the integrated circuit.

Preferably, step S33 includes the steps of:

Step S331: carrying out calculation on the electric signal frequency change loss data on the transmission electric signal frequency change data to obtain electric signal frequency change loss data;

Step S332: carrying out reinforcement unit area current calculation on the electric signal frequency change loss data to obtain reinforcement unit area current;

step S333: analyzing the temperature change data of the current component of the integrated circuit based on the current of the reinforcement unit area and the density of the integrated circuit component to obtain the temperature change data of the current component;

Step S334: and drawing a current component temperature change curve on the current component temperature change data based on the current of the reinforcement unit area and the density of the integrated circuit component, so as to obtain the current component temperature change curve.

According to the invention, through carrying out electric signal frequency change loss data calculation on transmission power transmission signal frequency change data, energy loss caused by frequency change in the transmission process of signals can be obtained, the signal frequency change loss data reflects signal transmission efficiency, important information is provided for subsequent analysis of signal transmission performance and evaluation of energy consumption of an integrated circuit, potential signal distortion or power consumption problems in the circuit are found, and data support is provided for electric signal transmission and power consumption; the current calculation of the reinforcement unit area is carried out on the loss data of the frequency change of the electric signal, so that the additional current requirement caused by the frequency change of the signal can be obtained, the current of the reinforcement unit area reflects the current required to be additionally provided in the signal transmission process, and necessary data is provided for the subsequent analysis of the temperature change of the current component; the integrated circuit is subjected to temperature change data analysis of the current component based on the current of the reinforcement unit area and the density of the integrated circuit component, so that temperature change data of the current component under different component densities can be obtained, the data reflect the influence of component density and signal frequency change on the temperature of the current component, and a foundation is provided for the subsequent analysis of the temperature change trend; the current component temperature change curve is drawn on the basis of the current of the reinforcement unit area and the temperature change data of the integrated circuit component, the curve of the temperature change of the current component under different component densities can be obtained, the curve intuitively shows the influence relationship of the component density and the signal frequency change on the temperature, the temperature change rule is conveniently analyzed, the reference is provided for predicting the temperature change under different working conditions, the data can reflect the relationship among the signal transmission efficiency, the current requirement and the temperature change, and important reference basis is provided for understanding the energy consumption, the temperature control and the performance optimization of the integrated circuit.

Preferably, step S333 includes the steps of:

step S3331: performing heat increment change analysis on the integrated circuit based on the current of the reinforced unit area to obtain the heat increment of the current of the reinforced unit area;

Step S3332: performing component density aggregation heat analysis on the current heat increment of the reinforcement unit area based on the integrated circuit component density to obtain component density aggregation heat data;

step S3333: performing positive feedback loop analysis on component resistance increase of the integrated circuit based on the current heat increment of the reinforcement unit area and the component density aggregation heat data to obtain component resistance increment data;

Step S3334: carrying out resistance heat accumulation calculation on the component resistance incremental data to obtain resistance heat accumulation data;

Step S3335: and fitting the current component temperature change data to the current heat increment of the reinforcement unit area, the component density aggregation heat data and the resistance heat accumulation data to obtain the current component temperature change data.

According to the invention, the heat increment change analysis is carried out on the integrated circuit based on the current of the reinforcement unit area, so that the additional heat increment caused by the signal frequency change can be obtained, the heat increment of the current of the reinforcement unit area reflects the additional heat generated in the signal transmission process, and important data is provided for the subsequent analysis of heat accumulation and temperature change; the method comprises the steps of carrying out component density aggregation heat analysis on the current heat increment of a reinforcement unit area based on the density of an integrated circuit component, so that aggregation conditions of heat around the component under different component densities can be obtained, the component density aggregation heat data reflects heat distribution conditions under different component densities, and a foundation is provided for subsequent analysis of temperature change trend and heat accumulation; carrying out positive feedback circulation analysis on component resistance increase of the integrated circuit based on the current heat increment of a reinforcement unit area and the heat data accumulated by the component density, so that component resistance increase caused by heat accumulation can be obtained, the influence of the heat accumulation on the component resistance is reflected by the component resistance increment data, important information is provided for subsequent analysis of resistance change trend and temperature change, potential overheat problems in the circuit are found through positive feedback circulation analysis, and the component resistance increment is quantitatively calculated; the resistance heat accumulation calculation is carried out on the component resistance incremental data, so that extra heat generation caused by resistance increase can be obtained, the influence of resistance change on heat accumulation is reflected by the resistance heat accumulation data, and necessary data are provided for subsequent analysis of temperature change trend and heat accumulation; the temperature change data fitting of the current component is carried out on the current heat increment of the reinforcement unit area, the component density aggregation heat data and the resistance heat accumulation data, so that more accurate temperature change data of the current component can be obtained, the data can reflect complex relations among signal frequency change, component density, resistance change and temperature change, more comprehensive information is provided for understanding the temperature of an integrated circuit, and important references are provided for optimizing circuit design and ensuring stable operation of the circuit.

Preferably, step S4 comprises the steps of:

Step S41: performing variable-temperature simulation on the normal electromagnetic field of the integrated circuit based on the component density influence temperature model to obtain a variable-temperature simulation electromagnetic field;

Step S42: performing electromagnetic field change temperature threshold calculation on the variable-temperature simulated electromagnetic field to obtain an electromagnetic field change temperature threshold;

Step S43: carrying out transmission signal abnormal stability analysis on the variable-temperature simulation electromagnetic field based on the electromagnetic field variation temperature threshold value to obtain transmission signal abnormal stability;

step S44: performing abnormal temperature change marking signal conversion on abnormal stability of the transmission signal to obtain an abnormal temperature change marking signal;

step S45: and carrying out abnormal integrated circuit acquisition on the integrated circuit based on the abnormal temperature change marking signal to obtain an abnormal integrated circuit result.

According to the invention, the temperature change simulation is carried out on the normal electromagnetic field of the integrated circuit based on the component density influence temperature model, so that the electromagnetic field distribution of the integrated circuit under different temperature conditions can be simulated, the performance of the integrated circuit under different temperatures can be estimated by simulating the electromagnetic field change under different temperatures, and the potential abnormal situation can be predicted; the electromagnetic field change temperature threshold value calculation is carried out on the variable-temperature simulation electromagnetic field, the temperature threshold value of the remarkable change of the electromagnetic field of the integrated circuit can be determined, the electromagnetic field change temperature threshold value can help to judge the working stability of the integrated circuit at different temperatures, and a reference standard is provided for subsequent abnormal detection; the temperature change simulation electromagnetic field is subjected to abnormal stability analysis of transmission signals based on the electromagnetic field change temperature threshold value, so that the stability of signal transmission of the integrated circuit at different temperatures can be evaluated, the abnormal temperature range can be identified by analyzing the stability of signal transmission, and more accurate information is provided for subsequent abnormal detection; the abnormal temperature change marking signal conversion is carried out on the abnormal stability of the transmission signal, so that the abnormal temperature range of signal transmission can be converted into an identifiable marking signal, the abnormal temperature change marking signal can conveniently identify the abnormal temperature range, and a clear indication is provided for the subsequent acquisition of an abnormal integrated circuit; and acquiring the abnormal integrated circuit based on the abnormal temperature change mark signal, so that the abnormal integrated circuit can be identified. By identifying abnormal integrated circuits, targets can be provided for subsequent failure analysis and repair, and important references can be provided for improving the reliability and performance of the integrated circuits.

Preferably, step S43 comprises the steps of:

step S431: carrying out electric signal transmission on the variable-temperature simulation electromagnetic field to obtain variable-temperature transmission electric signals;

step S432: performing signal delay calculation on the variable-temperature transmission electric signal based on the electromagnetic field variation temperature threshold value to obtain a variable-temperature delay electric signal;

Step S433: performing data frequency domain conversion on the variable-temperature transmission electric signal and the variable-temperature delay electric signal to obtain an electric signal frequency spectrum and a delay signal frequency spectrum;

Step S434: performing spectrum amplitude calculation on the electric signal spectrum and the delayed signal spectrum to obtain electric signal spectrum amplitude and delayed signal spectrum amplitude;

step S435: performing abnormal amplitude assessment on the frequency spectrum amplitude of the delayed signal based on the frequency spectrum amplitude of the electric signal to obtain delayed abnormal amplitude data;

Step S436: and carrying out transmission signal abnormal stability analysis on the delayed abnormal amplitude data to obtain transmission signal abnormal stability.

The invention can simulate the signal transmission condition of the integrated circuit under different temperature conditions by carrying out electric signal transmission on the variable-temperature simulation electromagnetic field, observe the change of signals under different temperatures by simulating the signal transmission, and analyze the influence of the temperature on the signal transmission; signal delay calculation is carried out on the variable-temperature transmission electric signal based on the electromagnetic field change temperature threshold value, so that the delay time of signal transmission under different temperature conditions can be obtained, the signal delay reflects the change of the signal transmission speed, the performance of the integrated circuit under different temperatures can be evaluated, and the existing abnormality can be identified; the variable-temperature transmission electric signal and the variable-temperature delay electric signal are subjected to data frequency domain conversion, so that frequency spectrum information of the signals at different temperatures can be obtained, the frequency spectrum information can reflect frequency components of the signals, analysis of change rules of the signals at different temperatures is facilitated, and abnormal frequencies are identified; the frequency spectrum amplitude calculation is carried out on the electric signal frequency spectrum and the delayed signal frequency spectrum, so that the amplitude of the signal frequency spectrum under different temperature conditions can be obtained, the frequency spectrum amplitude can reflect the change of the signal intensity, the efficiency of signal transmission can be evaluated, and the existing abnormal signal intensity can be identified; the delayed signal spectrum amplitude is subjected to abnormal amplitude assessment based on the signal spectrum amplitude, so that whether signal delay causes abnormal change of signal intensity can be judged, abnormal amplitude assessment can help to identify abnormal signal delay, and an important reference is provided for subsequent abnormal analysis; and the stability of signal transmission of the integrated circuit at different temperatures can be evaluated by analyzing the stability of signal transmission, the abnormal temperature range can be identified by analyzing the stability of signal transmission, and more accurate information is provided for the subsequent acquisition of abnormal integrated circuits.

Preferably, the present invention also provides an integrated circuit intelligent test analysis system for performing the integrated circuit intelligent test analysis method as described above, the integrated circuit intelligent test analysis system comprising:

The integrated circuit electromagnetic field analysis module is used for carrying out integrated circuit normal electromagnetic field analysis on the integrated circuit to obtain an integrated circuit normal electromagnetic field;

The transmission electric signal frequency analysis module is used for carrying out electric signal transmission processing on the integrated circuit to obtain transmission electric signal data; performing electric signal change frequency calculation on transmission electric signal data to obtain transmission electric signal change frequency data;

The component density influence temperature model construction module is used for analyzing the component density of the integrated circuit to obtain the component density of the integrated circuit; performing component density influence temperature model construction on the integrated circuit based on the component density of the integrated circuit and the frequency change data of the transmission electric signals to obtain a component density influence temperature model;

The abnormal integrated circuit identification module is used for carrying out variable-temperature simulation on the normal electromagnetic field of the integrated circuit based on the component density influence temperature model to obtain a variable-temperature simulation electromagnetic field; carrying out abnormal stability analysis on the transmission signal of the variable-temperature simulation electromagnetic field to obtain abnormal stability of the transmission signal; and acquiring an abnormal integrated circuit of the integrated circuit based on the abnormal stability of the transmission signal to obtain an abnormal integrated circuit result.

In summary, the invention provides an integrated circuit intelligent test analysis system, which is composed of an integrated circuit electromagnetic field analysis module, a transmission electric signal frequency analysis module, a component density influence temperature model construction module and an abnormal integrated circuit identification module, and can realize the arbitrary integrated circuit intelligent test analysis method of the invention, and is used for realizing the arbitrary integrated circuit intelligent test analysis method by combining the operation between computer programs running on each module, and the internal structures of the system are mutually cooperated, thus greatly reducing the repeated work and the manpower investment, and providing more accurate and more efficient integrated circuit intelligent test analysis process rapidly and effectively, thereby simplifying the operation flow of the integrated circuit intelligent test analysis system.

Drawings

Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of a non-limiting implementation, made with reference to the accompanying drawings in which:

FIG. 1 is a flow chart illustrating steps of an intelligent test analysis method for an integrated circuit according to the present invention;

FIG. 2 is a detailed step flow chart of step S3 in FIG. 1;

FIG. 3 is a detailed flowchart illustrating the step S33 in FIG. 2;

Detailed Description

The following is a clear and complete description of the technical method of the present invention, taken in conjunction with the accompanying drawings, and it is evident that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, are intended to fall within the scope of the present invention.

Furthermore, the drawings are merely schematic illustrations of the present invention and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus a repetitive description thereof will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities. The functional entities may be implemented in software or in one or more hardware modules or integrated circuits or in different networks and/or processor methods and/or microcontroller methods.

It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

In order to achieve the above objective, referring to fig. 1 to 3, the present invention provides an intelligent testing and analyzing method for an integrated circuit, comprising the following steps:

In the embodiment of the present invention, please refer to fig. 1, which is a schematic flow chart of steps of an intelligent testing and analyzing method for an integrated circuit, in this example, the intelligent testing and analyzing method for an integrated circuit includes the following steps:

In the embodiment of the invention, the geometry of a circuit element is obtained by reading a layout file of an integrated circuit by using a special script, the proper block size is selected according to the size of the integrated circuit, the integrated circuit layout is grid-divided according to the selected block size, a circuit node on the edge of each block space is identified to perform direct current simulation on the integrated circuit by using a circuit simulation tool, the potential difference of adjacent nodes on each boundary of each block space is calculated, namely the potential difference of the edge of each block is calculated by using a plate capacitor model, and the electric field strength of the center point of each block space is calculated according to the potential difference of the edge of each block and the geometry size of the block space; and drawing the electric field intensity and the direction of all the block space center points on the integrated circuit layout to form a normal electric field distribution diagram of the integrated circuit and calculate the magnetic field distribution of the integrated circuit.

In the embodiment of the invention, through carrying out electric signal transmission processing on an integrated circuit, firstly acquiring transmission electric signal data, including setting observation points, setting simulation parameters, executing transient simulation and data storage, then carrying out level judgment on the acquired electric signal data through setting threshold voltage, recording the signal level of each sampling point to obtain transmission electric signal level data, then analyzing the high-low level conversion in the transmission electric signal level data, identifying a conversion starting point and an end point, calculating each high-low level conversion time, carrying out statistical analysis, finally defining time windows to divide the electric signal data, counting the high-low level conversion times in each time window, calculating the electric signal change frequency, constructing a transmission electric signal frequency change curve, and finally obtaining the transmission electric signal frequency change data.

in the embodiment of the invention, three-dimensional morphology data are obtained through integrated circuit surface topology scanning, a component area is identified and calculated after preprocessing, and then the integrated circuit component density is obtained through analysis, then a typical component is selected, thermal simulation is conducted by combining transmission electric signal frequency change data, a curve of temperature change of the typical component along with working frequency change under different component densities, namely a current component temperature change curve, is obtained, finally, a curve fitting algorithm is utilized to fit the temperature change curve, a mathematical model reflecting the relation among component density, working frequency and component temperature is obtained, model verification and optimization are conducted, and finally, a temperature influence model of the integrated circuit component density is constructed.

In the embodiment of the invention, the temperature change simulation is carried out on the normal electromagnetic field of the integrated circuit by utilizing the component density to influence the temperature model, so that the electromagnetic field distribution at different temperatures is obtained. The method comprises the steps of determining an electromagnetic field change temperature threshold value by analyzing the change rate of electromagnetic parameters in the temperature change process, loading a signal model on the basis, simulating transmission characteristics of signals at different temperatures, evaluating abnormal stability of signal transmission, generating an abnormal temperature change marking signal, finally analyzing the marking signal, positioning an abnormal circuit area or component, and outputting an abnormal integrated circuit result report containing abnormal positions, temperature information and abnormal types, so that an integrated circuit with abnormal signal transmission caused by temperature change is identified.

Preferably, step S1 comprises the steps of:

In the embodiment of the invention, the layout file of the target integrated circuit is read by using a special script, the information of the geometric shape, the position and the connection relation of the circuit elements is obtained, the proper block size is selected according to the size and the complexity of the integrated circuit, the integrated circuit layout is grid-divided according to the set block size to form a plurality of regular block spaces, and the boundary coordinates of each block space, the included circuit element information and the adjacent block space information are recorded.

in the embodiment of the invention, through identifying the circuit nodes on the edge of each partitioned space, a circuit simulation tool is used for carrying out direct current simulation on the integrated circuit under typical working conditions to obtain the potential value of each circuit node, and for each partitioned space, the potential difference of adjacent nodes on each boundary, namely the potential difference of the partitioned edges, is calculated, and the position information of the corresponding boundary is recorded.

in the embodiment of the invention, the blocking space is simplified into a plate capacitor model, the electric field intensity of the center point of each blocking space is calculated according to the potential difference of the blocking edge of the corresponding boundary and the geometric dimension of the blocking space by utilizing the plate capacitor model, and the direction of the electric field of the center point of each blocking space is determined according to the potential of the adjacent node and is pointed in the direction of potential reduction.

In the embodiment of the invention, the electric field intensity and the direction of the center point of all the partitioned spaces are drawn on the integrated circuit layout to form a normal electric field distribution diagram of the integrated circuit; smoothing the electric field intensity between the block spaces by using an interpolation algorithm to obtain a finer electric field distribution diagram; based on the electric field distribution and the circuit current information, the magnetic field distribution of the integrated circuit is calculated by using maxwell's equations.

Preferably, step S2 comprises the steps of:

In the embodiment of the invention, a signal path needing to be subjected to electric signal analysis is selected in an integrated circuit layout, observation points, such as a signal sending end, a signal receiving end and a key interconnection line, are arranged at key nodes on the path, simulation parameters of a circuit simulation tool are set according to actual working conditions, and the circuit simulation tool is used for carrying out transient simulation on an integrated circuit to obtain voltage or current values of each observation point at different time points, namely, transmission electric signal data.

In the embodiment of the invention, the threshold voltage for distinguishing high level from low level is determined according to the circuit signal standard, the acquired transmission electric signal data is compared with the threshold voltage, and whether the signal level of each sampling point is high level or low level is judged; and recording the signal level of each sampling point and the corresponding time information to form transmission electric signal level data.

In the embodiment of the invention, the starting point and the ending point of each high-low level conversion are identified by analyzing the acquired transmission electric signal level data, and an edge detection algorithm can be adopted, for example, the occurrence of the level conversion can be judged by comparing the level values of adjacent sampling points; the falling edge time from each high level to low level and the rising edge time from each low level to high level are calculated respectively, the calculation of the transition time can be obtained through the time difference between the starting point and the ending point, and statistics is carried out on all the recognized high and low level transition times.

In the embodiment of the invention, the transmission electric signal level data is divided into a plurality of time periods by selecting a proper time window according to the characteristics of the signals; counting the times of high and low level conversion in each time window, wherein the times of conversion can reflect the change condition of the signal frequency in the time period, the more the times of conversion are, the higher the signal frequency is, and the change frequency of the electric signal in the time period is calculated according to the times of high and low level conversion in each time window, for example, the frequency can be calculated by dividing the times of conversion by the length of the time window.

Preferably, step S3 comprises the steps of:

As an embodiment of the present invention, referring to fig. 2, a detailed step flow chart of step S3 in fig. 1 is shown, in which step S3 includes the following steps:

in the embodiment of the invention, the surface scanning is performed on the target integrated circuit by using a high-precision three-dimensional scanner, the scanner can select a laser scanner and a white light interferometer to obtain high-resolution three-dimensional point cloud data, the scanning range covers the whole chip surface, the proper scanning precision is set according to the chip size and the structural complexity, and finally, the obtained point cloud data is spliced and processed to obtain complete integrated circuit surface topology scanning data, including chip surface height information and component position information.

In the embodiment of the invention, different component types, such as transistors, resistors and capacitors, on the surface of the chip are identified and marked by utilizing the topology scanning data of the surface of the integrated circuit, different types of components are classified and counted according to preset component identification rules and algorithms, the surface of the chip is divided into a plurality of areas with equal size, the number and the area occupation ratio of different types of components in each area are counted, and the component density of the area is calculated according to the number and the area occupation ratio of the components in each area.

In the embodiment of the invention, the frequency change data of the electric signals transmitted by the integrated circuit under different working loads is obtained, the data can be obtained by monitoring the frequency change or the power consumption change of key signal wires in the chip, the chip is divided into a plurality of subareas by combining the component density of the integrated circuit, the power consumption density of each subarea is calculated according to the component density of each subarea and the signal transmission frequency change data, the temperature distribution of the chip under different power consumption densities is simulated by utilizing thermal simulation software, and the temperature change curve of the current component under different component densities, namely the current component temperature change curve is drawn.

In the embodiment of the invention, key characteristic parameters such as a temperature peak value, a temperature gradient and a temperature change rate are extracted by analyzing a current component temperature change curve, a mathematical relationship model between component density and the temperature characteristic parameters is established by utilizing a data fitting and machine learning method, and a linear model which is required according to actual data characteristics and model precision is specifically selected by the model to obtain a component density influence temperature model capable of accurately describing the influence of component density on chip temperature.

Preferably, step S32 comprises the steps of:

In the embodiment of the invention, three-dimensional point cloud data of the surface of an integrated circuit is acquired by utilizing high-precision three-dimensional scanning equipment such as a confocal microscope and a white light interferometer, then, preprocessing is carried out on the acquired point cloud data, including noise point removal, data smoothing and point cloud registration operation, and then, boundary extraction and feature recognition geometric analysis are carried out on the preprocessed point cloud data, so that the geometric shape, size and position information of the integrated circuit are extracted, and the geometric data of the integrated circuit is formed.

In an embodiment of the invention, the integrated circuit geometric data is converted into a continuous three-dimensional surface model by using three-dimensional modeling software and adopting curved surface reconstruction algorithms such as triangulation and poisson reconstruction, and the model is subjected to detail adjustment such as chamfering, rounding and curved surface fitting.

In the embodiment of the invention, the integrated circuit component is identified and extracted by using the image processing and pattern recognition algorithm through the acquired integrated circuit geometric data, firstly, the integrated circuit geometric data is divided, different component areas are separated, then, feature extraction, such as area, perimeter, shape factor geometric features, color and texture visual features, is carried out on each component area, and the extracted feature information is integrated to form the integrated circuit component feature data.

In the embodiment of the invention, the components in the three-dimensional model of the integrated circuit are classified and identified by utilizing a machine learning algorithm, such as a support vector machine and a neural network, according to the characteristic data of the components of the integrated circuit, firstly, a classifier is trained by utilizing marked sample data, then, each component in the three-dimensional model of the integrated circuit is classified by utilizing the trained classifier, the type of each component is identified, and finally, the identification result is marked on the three-dimensional model to form the identification data of the components of the integrated circuit.

In the embodiment of the invention, the distance between different components is calculated through the integrated circuit component identification data, firstly, the center coordinate of each component is determined according to the component identification data, then, the Euclidean distance between the center points of any two components is calculated by utilizing a distance formula, and the distance information between all the components is stored to form the integrated circuit component spacing data.

In the embodiment of the invention, the component density of the integrated circuit is calculated through the component spacing data of the integrated circuit, the component density can be defined as the number of components in a unit area, and also can be defined as the ratio of the occupied area of the components to the total area, a proper definition mode is selected according to actual requirements, and the component density of the integrated circuit is finally obtained through calculation by utilizing the component spacing data.

Preferably, step S33 includes the steps of:

As an embodiment of the present invention, referring to fig. 3, a detailed step flow chart of step S33 in fig. 2 is shown, in which step S33 includes the following steps:

In the embodiment of the invention, the power or the amplitude of the electric signal transmitted at different frequencies is measured through a network analyzer or a spectrum analyzer device, the corresponding relation between the frequency and the power and the amplitude is recorded to obtain the frequency change data of the electric signal transmitted, and then the loss of the electric signal at different frequencies on the transmission line is calculated according to the characteristic impedance and the transmission distance of the transmission line, for example, the loss of the electric signal at different frequencies is calculated by adopting a transmission line model or electromagnetic simulation software, and the frequency change loss data of the electric signal is obtained by comparing the loss of the electric signal at different frequencies with the initial power and the amplitude.

In the embodiment of the invention, the loss data is changed according to the frequency of the electric signal, so that the rule of electric signal loss at different frequencies is analyzed, for example, the relation between the loss and the frequency is established. Then, according to the operating frequency range of the integrated circuit, the average electrical signal loss in the frequency range is calculated, the average electrical signal loss is converted into a current loss per unit area, i.e. the unit area current is reinforced, for example, the current loss is calculated according to the power loss and the line impedance, and the current loss is averaged to the effective area of the integrated circuit.

In the embodiment of the invention, the heat power density distribution of the integrated circuit under different component densities is analyzed by combining the current of the reinforcing unit area and the component density of the integrated circuit, a heat simulation model of the integrated circuit is established by utilizing finite element analysis software, the current of the reinforcing unit area is used as a heat source to be loaded into the model, the material property and the boundary condition are set according to the component density, the heat simulation is operated, the temperature field distribution of the integrated circuit under different component densities is obtained, and the temperature change data of different components are extracted, so that the temperature change data of the current component is formed.

In the embodiment of the invention, a graph of the relation between the current and the component temperature change under different component densities, namely a current component temperature change curve, is drawn through the current component temperature change data, wherein the abscissa is a current value, and the ordinate is the component temperature.

Preferably, step S333 includes the steps of:

In the embodiment of the invention, through carrying out thermal simulation modeling on a target integrated circuit, the model comprises a circuit structure, then, a standard unit area current value is set and loaded into the model, the temperature distribution and the heat flux density distribution generated by the unit area current in the circuit are calculated by utilizing a finite element analysis numerical simulation method, and finally, the temperature distribution is compared with the temperature distribution without current loading, so that the temperature change quantity caused by the unit area current is obtained, namely the reinforcement unit area current heat increment.

In the embodiment of the invention, the heat increment caused by current in unit area of each area is calculated by means of the component density distribution data of each area in the integrated circuit and combining the current heat increment of the unit area, and the component density aggregation heat data is obtained by multiplying the heat increment of the unit area of each area by the component density of the area in consideration of the influence of the component density on heat conduction and aggregation.

In the embodiment of the invention, a relation model between the component resistance and the temperature is established, then the component resistance increment caused by initial temperature rise is calculated by combining the heat increment, the resistance increment is substituted into the model, the temperature rise is calculated again, and the calculation is iterated until the temperature and the resistance change are converged, so that the obtained resistance increment is finally obtained.

In the embodiment of the invention, the obtained resistance increment data of the components are combined with the current of each component in the circuit, the extra heat generated by the resistance increment of each component is calculated, and the extra heat of all the components is accumulated to obtain the resistance heat accumulation data generated by the resistance increment in the whole integrated circuit.

In the embodiment of the invention, the total heat increment of each region in the integrated circuit is obtained by integrating the current heat increment of the reinforcement unit area, the heat data accumulated by the density of the components and the heat accumulation data accumulated by the resistance heat, and the total heat increment is converted into the temperature variation of each component by utilizing a thermal resistance network model method, so that the temperature change data of the current components is finally obtained.

Preferably, step S4 comprises the steps of:

in the embodiment of the invention, a temperature model is established by the structure of an integrated circuit and the distribution of the density of components, then electromagnetic field simulation software is utilized to introduce a normal electromagnetic field of the integrated circuit and layout information of the integrated circuit, the temperature model is combined with the density of components to set the simulation environment temperature, and thermoelectric magnetic field coupling simulation is started, in the process, the temperature of each region is dynamically regulated according to the temperature model influenced by the density of the components, and the electromagnetic field distribution of the simulation circuit under different temperatures is finally obtained to simulate electromagnetic field data in variable temperature.

In the embodiment of the invention, an index for representing the change degree of an electromagnetic field, such as the change rate of the intensity of the electric field and the change rate of characteristic impedance, is defined, then variable-temperature simulation electromagnetic field data are analyzed, values of the index at different temperatures are extracted, the change trend of the index along with the temperature is analyzed, a critical temperature value is determined, when the temperature exceeds the value, the change range of the index exceeds a preset threshold, namely the electromagnetic field is considered to be obviously changed, and the critical temperature value is the electromagnetic field change temperature threshold.

in the embodiment of the invention, variable-temperature simulation electromagnetic field data are divided into different temperature intervals through electromagnetic field change temperature threshold values, then signal transmission simulation is carried out on the electromagnetic field data in each temperature interval, the change of signal transmission performance indexes in different temperature intervals is compared, the influence of temperature change on signal transmission stability is evaluated, and finally a transmission signal abnormal stability analysis result is obtained.

In the embodiment of the invention, an abnormality judgment threshold value of a signal transmission performance index is set through an analysis result of abnormal stability of a transmission signal, the threshold value is compared with the signal transmission performance index in different temperature intervals, if the index exceeds the threshold value, the signal transmission abnormality exists in the temperature interval, and finally, an abnormal temperature change marking signal is generated according to whether the signal transmission abnormality exists in the different temperature intervals.

In the embodiment of the invention, a temperature interval with abnormal signal transmission is identified through an abnormal temperature change mark signal, an integrated circuit area corresponding to the temperature interval and the component density distribution characteristics of the area are analyzed by combining a component density influence temperature model, and finally an abnormal integrated circuit result is screened.

Preferably, step S43 comprises the steps of:

In the embodiment of the invention, a signal transmission path to be analyzed is selected on the basis of a variable-temperature simulation electromagnetic field, the path is loaded into an electromagnetic field simulation model, parameters of an electric signal to be transmitted are set, transmission processes of the electric signal at different temperatures are simulated by using electromagnetic field simulation software, time domain waveforms of the signal on the path are recorded, and variable-temperature transmission electric signal data containing different temperature information are obtained.

In the embodiment of the invention, variable-temperature transmission electric signal data are divided into different temperature intervals through the electromagnetic field changing temperature threshold value, and then, the propagation time of the signals on a transmission path is extracted for the electric signals in the temperature intervals, and the delay time relative to the reference temperature is calculated.

In the embodiment of the invention, the frequency spectrum information of the electric signal and the frequency spectrum information of the delay signal at different temperatures are obtained by converting the variable-temperature transmission electric signal data and the variable-temperature delay electric signal data from the time domain to the frequency domain by utilizing a Fourier transform method.

In the embodiment of the invention, the amplitude value on each frequency point is calculated through the electric signal spectrum and the delayed signal spectrum, so as to obtain electric signal spectrum amplitude data and delayed signal spectrum amplitude data.

In the embodiment of the invention, main frequency components and corresponding amplitude ranges of signals are determined through the frequency spectrum amplitude data of the electric signals, and then whether the amplitude values of the frequency spectrum amplitudes of the delayed signals on the main frequency components exceed the normal range or not is compared; if the frequency component exceeds the predetermined value, the delayed signal on the frequency component is considered to have abnormal amplitude, and all the frequency points having the abnormal amplitude and the corresponding amplitude values thereof are recorded to obtain delayed abnormal amplitude data.

In the embodiment of the invention, whether the frequency points which obviously exceed the normal range and the corresponding amplitude values exist or not is judged by delaying the abnormal amplitude data, the influence of the delayed abnormal amplitude on the signal transmission quality, such as intersymbol interference and bit error rate, is evaluated, and the signal transmission stability of the transmission path at different temperatures is judged according to the analysis result.

The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An integrated circuit intelligent test and analysis method, characterized in that it comprises the following steps:

Step S1: analyzing the normal electromagnetic field of the integrated circuit to obtain the normal electromagnetic field of the integrated circuit;

Step S2: performing electrical signal transmission processing on the integrated circuit to obtain transmission electrical signal data; performing electrical signal change frequency calculation on the transmission electrical signal data to obtain transmission electrical signal frequency change data;

Step S3: Analyze the component density of the integrated circuit to obtain the component density of the integrated circuit; construct a component density influence temperature model for the integrated circuit based on the component density of the integrated circuit and the frequency change data of the transmitted electrical signal to obtain the component density influence temperature model;

Step S4: Based on the component density affecting temperature model, a variable temperature simulation is performed on the normal electromagnetic field of the integrated circuit to obtain a variable temperature simulated electromagnetic field; an abnormal stability analysis of the transmission signal of the variable temperature simulated electromagnetic field is performed to obtain the abnormal stability of the transmission signal; based on the abnormal stability of the transmission signal, an abnormal integrated circuit is obtained for the integrated circuit to obtain an abnormal integrated circuit result.

2. The integrated circuit intelligent testing and analysis method according to claim 1, characterized in that step S1 comprises the following steps:

Step S11: performing spatial block processing on the integrated circuit to obtain an integrated circuit block space;

Step S12: performing normal transmission block edge potential difference acquisition on the integrated circuit block space to obtain the block edge potential difference;

Step S13: calculating the electric field strength at the center of the block based on the potential difference at the edge of the block to obtain the electric field strength at the center of the block;

Step S14: performing normal electromagnetic field analysis on the integrated circuit based on the central electric field strength of the blocks to obtain the normal electromagnetic field of the integrated circuit.

3. The integrated circuit intelligent testing and analysis method according to claim 1, characterized in that step S2 comprises the following steps:

Step S21: performing electrical signal transmission processing on the integrated circuit to obtain transmission electrical signal data;

Step S22: acquiring level data of the transmission electrical signal data to obtain the transmission electrical signal level data;

Step S23: analyzing the high-low level conversion time of the transmission electrical signal level data to obtain high-low level conversion time data;

Step S24: Calculate the frequency of electrical signal changes on the high-low level conversion time data to obtain transmission electrical signal frequency change data.

4. The integrated circuit intelligent testing and analysis method according to claim 1, characterized in that step S3 comprises the following steps:

Step S31: performing a surface topology scan on the integrated circuit to obtain surface topology scan data of the integrated circuit;

Step S33: plotting a curve of the integrated circuit based on the integrated circuit component density and the transmission electrical signal frequency change data to obtain a current component temperature change curve;

Step S34: constructing a component density effect temperature model for the integrated circuit based on the current component temperature variation curve to obtain a component density effect temperature model.

5. The integrated circuit intelligent testing and analysis method according to claim 4, characterized in that step S32 comprises the following steps:

Step S321: performing integrated circuit geometry data analysis on the integrated circuit surface topology scanning data to obtain integrated circuit geometry data;

Step S322: constructing a three-dimensional model of the integrated circuit based on the integrated circuit geometry data to obtain a three-dimensional model of the integrated circuit;

Step S325: acquiring the component spacing of the integrated circuit component identification data to obtain the integrated circuit component spacing data;

Step S326: Calculate the component density of the integrated circuit component spacing data to obtain the integrated circuit component density.

6. The integrated circuit intelligent testing and analysis method according to claim 4, characterized in that step S33 comprises the following steps:

Step S331: Calculate the transmission signal frequency change loss data to obtain the transmission signal frequency change loss data;

Step S332: Calculate the reinforced current per unit area based on the frequency change loss data of the electrical signal to obtain the reinforced current per unit area;

Step S333: analyzing the temperature variation data of the current component of the integrated circuit based on the reinforced current per unit area and the density of the integrated circuit component to obtain the temperature variation data of the current component;

Step S334: Plotting a current component temperature variation curve based on the current component temperature variation data of the current component based on the reinforced current per unit area and the integrated circuit component density to obtain a current component temperature variation curve.

7. The integrated circuit intelligent testing and analysis method according to claim 6, characterized in that step S333 comprises the following steps:

Step S3331: analyzing the change of heat increment of the integrated circuit based on the reinforced current per unit area to obtain the reinforced current heat increment per unit area;

Step S3332: performing component density accumulation heat analysis on the reinforced unit area current heat increment based on the integrated circuit component density to obtain component density accumulation heat data;

Step S3333: performing a positive feedback loop analysis of component resistance increase on the integrated circuit based on the current heat increment per unit area and the component density accumulation heat data to obtain component resistance increment data;

Step S3334: performing resistance heat accumulation calculation on the component resistance increment data to obtain resistance heat accumulation data;

Step S3335: Fit the current component temperature variation data to the reinforcement unit area current heat increment, component density accumulation heat data, and resistance heat accumulation data to obtain the current component temperature variation data.

8. The integrated circuit intelligent testing and analysis method according to claim 1, characterized in that step S4 comprises the following steps:

Step S41: performing variable temperature simulation on the normal electromagnetic field of the integrated circuit based on the component density-effect-temperature model to obtain a variable temperature simulated electromagnetic field;

Step S42: calculating the temperature threshold of the electromagnetic field change for the variable temperature simulated electromagnetic field to obtain the temperature threshold of the electromagnetic field change;

Step S43: analyzing the abnormal stability of the transmission signal of the variable temperature simulated electromagnetic field based on the electromagnetic field change temperature threshold, and obtaining the abnormal stability of the transmission signal;

Step S44: converting the abnormal stability of the transmission signal into an abnormal temperature change mark signal to obtain an abnormal temperature change mark signal;

Step S45: Acquire abnormal integrated circuits based on the abnormal temperature change mark signal to obtain abnormal integrated circuit results.

9. The integrated circuit intelligent testing and analysis method according to claim 8, characterized in that step S43 comprises the following steps:

Step S431: transmitting an electrical signal to the variable temperature simulated electromagnetic field to obtain a variable temperature transmission electrical signal;

Step S432: performing signal delay calculation on the variable temperature transmission electrical signal based on the electromagnetic field change temperature threshold to obtain a variable temperature delayed electrical signal;

Step S433: performing data frequency domain conversion on the variable temperature transmission electrical signal and the variable temperature delayed electrical signal to obtain an electrical signal spectrum and a delayed signal spectrum;

Step S434: Calculate the spectrum amplitude of the electric signal spectrum and the delayed signal spectrum to obtain the spectrum amplitude of the electric signal and the delayed signal spectrum;

Step S435: evaluating the abnormal amplitude of the delayed signal spectrum amplitude based on the electrical signal spectrum amplitude to obtain delayed abnormal amplitude data;

Step S436: performing transmission signal abnormal stability analysis on the delay abnormal amplitude data to obtain transmission signal abnormal stability.

10. An integrated circuit intelligent test and analysis system, characterized in that it is used to execute the integrated circuit intelligent test and analysis method according to claim 1, and the integrated circuit intelligent test and analysis system comprises:

The integrated circuit electromagnetic field analysis module is used to analyze the integrated circuit normal electromagnetic field to obtain the integrated circuit normal electromagnetic field;

The transmission electric signal frequency analysis module is used to perform electric signal transmission processing on the integrated circuit to obtain transmission electric signal data; perform electric signal change frequency calculation on the transmission electric signal data to obtain transmission electric signal frequency change data;

The module for constructing a component density-effect-temperature model is used to analyze the component density of the integrated circuit to obtain the component density of the integrated circuit; construct a component density-effect-temperature model of the integrated circuit based on the integrated circuit component density and the transmission electrical signal frequency change data to obtain the component density-effect-temperature model;

The abnormal integrated circuit identification module is used to perform variable temperature simulation on the normal electromagnetic field of the integrated circuit based on the component density affecting temperature model to obtain the variable temperature simulated electromagnetic field; perform abnormal stability analysis on the transmission signal of the variable temperature simulated electromagnetic field to obtain the abnormal stability of the transmission signal; obtain abnormal integrated circuits based on the abnormal stability of the transmission signal to obtain abnormal integrated circuit results.