CN119008502A

CN119008502A - Electrostatic adsorption device

Info

Publication number: CN119008502A
Application number: CN202411472603.1A
Authority: CN
Inventors: 江旭初; 孙志鹏; 吴宇航; 陶伟杰
Original assignee: Suzhou Yinguan Semiconductor Technology Co ltd; Shanghai Yinguan Semiconductor Technology Co Ltd
Current assignee: Suzhou Yinguan Semiconductor Technology Co ltd; Shanghai Yinguan Semiconductor Technology Co Ltd
Priority date: 2024-10-22
Filing date: 2024-10-22
Publication date: 2024-11-22
Anticipated expiration: 2044-10-22
Also published as: CN119008502B

Abstract

The present invention provides an electrostatic adsorption device, wherein m radially extending first branches are connected to the outer periphery of the central electrode portion, and the first arc portions are connected to the first branches in pairs; m radially extending second branches are connected to the inner periphery of the edge electrode portion; the second arc portions are connected to the second branches in pairs; and the width of each first arc electrode and the second arc electrode is greater than or equal to 0.3 mm and less than or equal to 5 mm. The present invention sets the first electrode area and the second electrode area so that one electrode connection point is electrically connected to the entire electrode area, thereby reducing the wiring space required on the back; at the same time, the width and number of the arc electrodes are set to generate a strong gradient force, thereby improving the adsorption force on the high resistivity substrate to be adsorbed; in addition, an air avoidance area is set to provide a moving space for the substrate to be adsorbed, thereby improving the reliability of the electrostatic adsorption device; finally, the central electrode portion and the edge electrode portion are set to be a full circular ring, thereby maintaining a single electrode connection point while achieving a larger area of electrode area, thereby improving the adsorption force.

Description

Electrostatic adsorption device

Technical Field

The invention belongs to the field of semiconductor process equipment, and particularly relates to an electrostatic adsorption device.

Background

In the semiconductor industry, particularly etching, chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), ion implantation, electron beam wafer inspection, extreme ultraviolet lithography (EUVL), and the like, electrostatic chucks (ESC, electroStatic Chuck) are often used to hold wafers by coulombic force or Johnsen-Rahbek (J-R) generated between the wafer and the electrode. Compared with the traditional mechanical chuck, the electrostatic chuck does not need large-size moving parts, and has small particle pollution risk and high reliability.

The electrostatic adsorption device may be classified into a unipolar electrostatic adsorption device and a bipolar electrostatic adsorption device. The unipolar electrostatic adsorption device is provided with only one electrode with one polarity, and the wafer is required to carry charges which are opposite to the charges of the electrode layer of the electrostatic adsorption device in a plasma environment, so that the wafer is adsorbed; the unipolar electrostatic adsorption device has a simple structure, and the electrode layer area is generally larger than that of the bipolar electrostatic adsorption device under the same size, so that the adsorption force is stronger, but a grounding cavity or a substrate is needed to form a complete loop. The double-electrode electrostatic adsorption device is characterized in that high voltages with opposite electrical properties are applied to the two electrodes, and the two electrodes and the wafer form a complete circuit, so that a plasma environment is not needed. Bipolar electrostatic chucks are widely used in non-plasma environments.

Along with the rapid development of the process of the third generation and the fourth generation semiconductors, the display industry is also continuously making technological breakthroughs. For the traditional semiconductor manufacturing process, the simple wafer processing can not meet the demands of customers, and the substrates with high resistivity such as sapphire and glass substrates can meet the demands of the emerging semiconductor application fields such as the display industry. However, the high-resistivity substrate is fixed by adsorption, and the requirement for electrostatic adsorption force is higher, and the bipolar electrostatic chuck in the prior art can only be used for adsorbing silicon wafers, but cannot meet the electrostatic adsorption of high-resistivity substrates such as sapphire, glass substrates and the like.

Accordingly, there is a need for a bipolar electrostatic chuck that enables reliable electrostatic attraction of high resistivity substrates.

It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solutions of the present application and is thus convenient for a person skilled in the art to understand, and it should not be construed that the above technical solutions are known to the person skilled in the art merely because these solutions are described in the background art section of the present application.

Disclosure of Invention

In view of the above drawbacks of the prior art, an object of the present invention is to provide an electrostatic chuck device for solving the problem of poor reliability of the bipolar electrostatic chuck on the high-resistivity substrate in the prior art.

In order to achieve the above object, the present invention provides an electrostatic adsorbing apparatus comprising: the cross section of the preset height of the insulating medium layer is a circular plane;

The first electrode region comprises a central electrode part, m first branch parts and m groups of first arc parts, and each group of first arc parts comprises n first arc electrodes; the center electrode part is in a first circular arc shape which coincides with the center of the circular plane, the first branch parts extend along the radial direction of the circular plane, and m first branch parts are connected with the periphery of the center electrode part; each group of the first arc parts are correspondingly connected with the first branch parts in pairs, and n first arc electrodes in the same group of the first arc parts are arcs which have different radiuses and are larger than n concentric circles of the first arc and correspond to each other on the same central angle;

The second electrode region comprises an edge electrode part, m second branch parts and m groups of second arc parts, and each group of second arc parts comprises n second arc electrodes; the edge electrode part is in a second circular arc shape which coincides with the center of the circular plane, the second branch parts extend along the radial direction of the circular plane, and m second branch parts are connected with the inner periphery of the edge electrode part; each group of the second arc parts are correspondingly connected with the second branch parts in pairs, and n second arc electrodes in the same group of the second arc parts are arcs with different radiuses and smaller than the corresponding n concentric circles of the second arc parts on the same central angle;

m is an integer greater than or equal to 1, n is an integer greater than 2; the first electrode region and the second electrode region are opposite in electric polarity; the first arc electrodes and the second arc electrodes which are radially adjacent along the circular plane are distributed in an interdigital staggered manner, and the insulating medium layer covers the exposed surfaces of the first arc electrodes and the second arc electrodes and fills gaps between the surfaces of the first arc electrodes and the second arc electrodes; the radius of the central electrode part is smaller than the radius of any second circular arc electrode, and the radius of the edge electrode part is larger than the radius of any first circular arc electrode;

The length of each first arc electrode along the radial direction of the circular plane is greater than or equal to 0.3 millimeter and less than or equal to 5 millimeters, and the length of each second arc electrode along the radial direction of the circular plane is greater than or equal to 0.3 millimeter and less than or equal to 5 millimeters.

Optionally, each group of the first arc portions are distributed on the same side of the corresponding connected first branch portion along the first circumferential direction of the circular plane; each group of the second arc parts are distributed on the same side of the corresponding connected second branch parts along the second circumferential direction of the circular plane; one of the first circumferential direction and the second circumferential direction is clockwise, and the other is counterclockwise.

Optionally, each group of the first arc parts is distributed on one side of the corresponding connected first branch part along the first circumferential direction of the circular plane and one side of the corresponding connected first branch part along the second circumferential direction of the circular plane; each group of the second arc parts are distributed on one side of the corresponding connected second branch part along the first circumferential direction of the circular plane and one side of the corresponding connected second branch part along the second circumferential direction of the circular plane; one of the first circumferential direction and the second circumferential direction is clockwise, and the other is counterclockwise.

Optionally, a clearance area is radially formed on the circular plane where the first branch portion and the second branch portion are located, and the first arc electrode, the second arc electrode, the first branch portion and the second branch portion close to the clearance area perform clearance deformation setting so as to obtain a space for setting the clearance area.

Optionally, the central electrode portion is hollow inside.

Optionally, the central electrode portion is a major arc with one opening; or the central electrode part is in a whole circular shape;

The edge electrode part is a major arc with an opening; or the edge electrode part is in a whole circular shape.

Alternatively, the area ratio of the first electrode region and the second electrode region is greater than 0 and equal to or less than 10, or the area ratio of the second electrode region and the first electrode region is greater than 0 and equal to or less than 10.

Optionally, the area ratio of the first electrode region and the second electrode region is equal to 1.

Optionally, a radial length of each first circular arc electrode along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm, and a radial length of each second circular arc electrode along the circular plane is greater than or equal to 0.3 mm and less than 0.5 mm.

Optionally, a radial length of each first circular arc electrode along the circular plane is equal to a radial length of each second circular arc electrode along the circular plane.

Optionally, the first arc electrode and the second arc electrode adjacent to each other in the radial direction of the circular plane are spaced apart by the same distance.

Optionally, each of the first and second circular arc electrodes adjacent in the radial direction of the circular plane has a separation distance of 0.5 mm or more and 10 mm or less.

Optionally, the electrostatic adsorption device further comprises a protective layer, the protective layer covers the upper portion of the insulating medium layer, the protective layer is used for being in contact with a substrate to be adsorbed, which is used for being adsorbed by the electrostatic adsorption device, and the volume resistivity of the protective layer is greater than or equal to 10 ¹⁴ Ω & cm.

Optionally, the volume resistivity of the insulating medium layer is greater than or equal to 10 ¹⁴ Ω·cm.

As described above, the electrostatic adsorption device of the present invention has the following beneficial effects:

According to the invention, through the distribution mode of the first electrode area and the second electrode area, the whole electrode can be electrically connected through one electrode connection point, so that the wiring space required by the back of the electrostatic adsorption device is reduced, and the integration and the debugging of the electrostatic adsorption device are facilitated;

According to the invention, the first arc electrode and the second arc electrode are arranged along the radial width and the radial number of the circular plane, so that gradient force with strong electric field strength is generated, the adsorption force of the electrostatic adsorption device is greatly improved, and the adsorption reliability of a substrate to be adsorbed with higher resistivity can be realized;

According to the invention, the clearance area is arranged, so that a moving space is provided for the electrostatic adsorption device in the transfer process of the substrate to be adsorbed, collision is avoided, the reliability of the electrostatic adsorption device is improved, and the substrate to be adsorbed and the transfer device are protected;

according to the invention, the central electrode part and the edge electrode part are arranged in a whole circular shape, so that the electrode distribution with larger area can be realized while a single electrode connection point is maintained, and the adsorption capacity is further improved.

Drawings

FIG. 1 is a schematic side sectional view showing a half of the electrostatic adsorbing apparatus in example 1 of the present invention.

Fig. 2 is a schematic diagram showing a distribution variation of electrostatic attraction force pressure along a radial direction of a circular plane in embodiment 1 of the present invention.

Fig. 3 is a partially enlarged detail view showing a side sectional view of the electrostatic adsorbing apparatus in embodiment 1 of the present invention.

Fig. 4 is a schematic top view of the electrostatic chuck according to embodiment 1 of the present invention.

Fig. 5 is an enlarged detail view showing the portion a of the electrostatic adsorbing apparatus in embodiment 1 of the present invention.

Fig. 6 is an enlarged detail view showing the part B of the electrostatic adsorbing apparatus in embodiment 1 of the present invention.

Fig. 7 is a table showing the correspondence between the area ratio of the first electrode region and the second electrode region and the electrostatic attraction force in example 1 of the present invention.

Fig. 8 is a graph showing the correspondence between the area ratio of the first electrode region and the second electrode region and the electrostatic attraction force in example 1 of the present invention.

Fig. 9 is a schematic top view of the electrostatic chuck according to embodiment 2 of the present invention.

Fig. 10 is a schematic top view of an electrostatic chuck according to an example of embodiment 2 of the present invention.

Fig. 11 is an enlarged detail view showing a part of the electrostatic adsorbing device C in an example of embodiment 2 of the present invention.

Fig. 12 is an enlarged detail view showing a portion of the electrostatic adsorbing device D in an example of embodiment 2 of the present invention.

Fig. 13 is an enlarged detail view showing a portion E of the electrostatic adsorbing device in an example of embodiment 2 of the present invention.

Fig. 14 is a schematic top view of the electrostatic chuck according to embodiment 3 of the present invention.

Fig. 15 is an enlarged detail view showing the electrostatic adsorbing device F in example 3 of the present invention.

Fig. 16 is an enlarged detail view showing the electrostatic adsorbing device G in example 3 of the present invention.

Fig. 17 is an enlarged detail view showing the portion of the electrostatic adsorbing apparatus H in embodiment 3 of the present invention.

Fig. 18 is a schematic top view of the electrostatic chuck in embodiment 4 of the present invention.

Fig. 19 is a schematic top view of an electrostatic chuck according to an example of embodiment 4 of the present invention.

Fig. 20 is an enlarged detail view showing a part of the electrostatic adsorbing device I in an example of embodiment 4 of the present invention.

Fig. 21 is an enlarged detail view showing a portion of the electrostatic adsorbing device J in an example of embodiment 4 of the present invention.

Fig. 22 is an enlarged detail view showing a portion of the electrostatic adsorbing device K in an example of embodiment 4 of the present invention.

Fig. 23 is a schematic top view of an electrostatic chuck according to an example of embodiment 4 of the present invention.

Fig. 24 is an enlarged detail view showing a part of the electrostatic adsorbing device L in an example of embodiment 4 of the present invention.

Fig. 25 is an enlarged detail view showing a part of the electrostatic adsorbing device M in an example of embodiment 4 of the present invention.

Fig. 26 is an enlarged detail view showing the portion of the electrostatic adsorbing device N in an example of embodiment 4 of the present invention.

Description of element reference numerals

10. A carrier layer; 11. radial direction; 12. a central shaft; 13. a first circumferential direction; 14. a second circumferential direction;

20. An insulating dielectric layer;

311. A first arc electrode; 312. a first branching portion; 321. a second arc electrode; 322. a second branch part; 33. a clearance area; 34. a hollow hole; 35. a center electrode portion; 361. a first electrode connection line; 362. a second electrode connection line; 363. a power supply; 37. an edge electrode portion;

40. A substrate to be adsorbed; 41. and a bump layer.

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

As described in detail in the embodiments of the present invention, the schematic drawings showing the structure of the apparatus are not partially enlarged to general scale, and the schematic drawings are merely examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.

For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures.

In the context of the present application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

Example 1:

The present embodiment provides an electrostatic chuck, as shown in fig. 1 and fig. 3-6, wherein fig. 1 is a side sectional view of the electrostatic chuck along a right half of a central axis 12, fig. 3 is a partially enlarged detailed view of fig. 1, fig. 4 is an overall top view of the electrostatic chuck, fig. 5 is a partially enlarged detailed view of a portion a of fig. 4, and fig. 6 is a partially enlarged detailed view of a portion B of fig. 4, the electrostatic chuck includes: the insulating medium layer 20, the first electrode area and the second electrode area, the cross section of the insulating medium layer 20 preset height is circular plane.

The first electrode region includes one central electrode portion 35, m first branch portions 312, and m sets of first circular arc portions, each set of first circular arc portions including n first circular arc electrodes 311; the center electrode part 35 is in a first circular arc shape overlapped with the center of the circular plane, the first branch parts 312 extend along the radial direction 11 of the circular plane, and m first branch parts 312 are connected with the periphery of the center electrode part 35; each group of first arc portions is correspondingly connected with the first branch portions 312 in pairs, and n first arc electrodes 311 in the same group of first arc portions are arcs with different radii and corresponding n concentric circles larger than the first arc on the same central angle.

The second electrode region includes one edge electrode portion 37, m second branch portions 322, and m sets of second arc portions, each set of second arc portions including n second arc electrodes 321; the edge electrode part 37 is in a second circular arc shape overlapped with the circle center of the circular plane, the second branch parts 322 extend along the radial direction 11 of the circular plane, and m second branch parts 322 are connected with the inner periphery of the edge electrode part 37; each group of second arc parts is correspondingly connected with the second branch parts 322 in pairs, and n second arc electrodes 321 in the same group of second arc parts are arcs with different radiuses and corresponding n concentric circles smaller than the second arc on the same central angle.

M is an integer greater than or equal to 1, n is an integer greater than 2; the first electrode region and the second electrode region have opposite electric polarities; the first arc electrodes 311 and the second arc electrodes 321 which are adjacent along the radial direction 11 of the circular plane are distributed in an interdigital staggered manner, and the insulating medium layer 20 covers the exposed surfaces of the first arc electrodes 311 and the second arc electrodes 321 and fills gaps between the surfaces; the radius of the center electrode portion 35 is smaller than the radius of any of the second circular arc electrodes 321, and the radius of the edge electrode portion 37 is larger than the radius of any of the first circular arc electrodes 311.

The length of each first arc electrode 311 along the radial direction 11 of the circular plane is greater than or equal to 0.3mm and less than or equal to 5mm, and the length of each second arc electrode 321 along the radial direction 11 of the circular plane is greater than or equal to 0.3mm and less than or equal to 5mm.

In the prior art, the bipolar electrostatic chuck does not need a plasma environment, so that the bipolar electrostatic chuck is widely applied in a non-plasma environment. With the rapid development of the process of the third generation and the fourth generation of semiconductors, the conventional semiconductor manufacturing process can not meet the demands of customers, and the high-resistivity substrates such as sapphire and glass substrates can meet the demands of the emerging semiconductor application fields. However, since the free charge on the surface of the high-resistivity substrate is far less than that on the surface of the silicon wafer, polarization charge is more difficult to form, and the requirement of the adsorption fixation of the high-resistivity substrate on electrostatic adsorption force is higher, the bipolar electrostatic chuck in the prior art can only be used for adsorbing the silicon wafer, but cannot meet the electrostatic adsorption of high-resistivity substrates such as sapphire, glass substrates and the like.

According to the invention, by arranging the first electrode region and the second electrode region in a distribution manner, and matching with the arrangement of the first arc electrode 311 and the second arc electrode 321 along the width of the radial direction 11 of the circular plane, the density of the arc electrodes which can be accommodated by the electrostatic adsorption device is improved, so that when a potential difference is applied between the electrodes, a stronger nonuniform electric field can be formed on the attraction surface of the insulating medium layer 20 between the electrodes, as shown in fig. 2, maxwell downward surface electrostatic adsorption force pressure which is obtained by simulation when two electrodes respectively apply power 363 with opposite polarities and is distributed along the radial direction 11 of the circular plane is applied, a nonuniform high-strength electric field is formed, the insulating medium layer 20 part in the nonuniform electric field is polarized, and a gradient force which is attracted in the direction of strong electric field strength is generated, so that the adsorption force which can be provided by the electrostatic adsorption device is greatly improved, the reliable adsorption of the semiconductor substrate and the conductor substrate can be better adsorbed, and the use and the adaptability of the electrostatic adsorption device are improved when the insulating medium substrate with higher resistivity is used as the substrate 40 to be adsorbed; meanwhile, the distributed connection mode of the central electrode part 35, the first branch part 312, the first arc part, the edge electrode part 37, the second branch part 322 and the second arc part is utilized, so that the first electrode area and the second electrode area can be respectively and electrically connected by only one electric connection point, the wiring space required by the back of the electrostatic adsorption device is reduced, the integration and the debugging of the electrostatic adsorption device are facilitated, and the portability and the miniaturization of the electrostatic adsorption device are facilitated.

Specifically, the "cross section of the insulating dielectric layer 20 at a predetermined height" is a plane passing through the first electrode region and the second electrode region, so that a circular plane can be used as a position reference plane describing each portion of the first electrode region and the second electrode region.

Specifically, as shown in fig. 3, which is a partially enlarged detail view of fig. 1, the electrode connection point of the first electrode region is electrically connected to one end of the first electrode connection line 361, the electrode connection point of the second electrode region is electrically connected to one end of the second electrode connection line 362, and the other end (not connected to the first electrode region) of the first electrode connection line 361 and the other end (not connected to the second electrode region) of the second electrode connection line 362 are respectively connected to two electrodes of the power supply 363, thereby supplying power to the first electrode region and the second electrode region.

In one embodiment, the first electrode connecting line 361 and the first branch portion 312 are fixedly connected by soldering, conductive adhesive bonding, or the like; the second electrode connection line 362 and the second branch portion 322 are fixedly connected by a process such as soldering or bonding with a conductive adhesive.

In one embodiment, the first electrode region is electrically connected to the positive electrode of the power supply 363 and the second electrode region is electrically connected to the negative electrode of the power supply 363.

In one embodiment, the first electrode region is electrically connected to a negative electrode of the power supply 363 and the second electrode region is electrically connected to a positive electrode of the power supply 363.

Specifically, as shown in fig. 1, the insulating dielectric layer 20 covers all surfaces exposed by each portion of the first electrode region and the second electrode region and fills a gap between any adjacent portions of the first electrode region and the second electrode region, so as to ensure that the first electrode region is not shorted with the second electrode region, and at the same time, the electrode is protected from oxidation or damage.

In this embodiment, as shown in fig. 4-6, where fig. 4 is an overall top view of the electrostatic adsorbing device, fig. 5 is an enlarged detail view of a portion a in fig. 4, and fig. 6 is an enlarged detail view of a portion B in fig. 4, each group of first circular arc portions are distributed on the same side of the corresponding connected first branch portion 312 along the first circumferential direction 13 of the circular plane; each group of second arc parts are distributed on the same side of the corresponding connected second branch parts 322 along the second circumferential direction 14 of the circular plane; one of the first circumferential direction 13 and the second circumferential direction 14 is clockwise, and the other is counterclockwise. In the present embodiment, the first circumferential direction 13 is counterclockwise, and the second circumferential direction 14 is clockwise. In other embodiments, it may also be: the first circumferential direction 13 is clockwise and the second circumferential direction 14 is counter-clockwise.

Specifically, in the present embodiment, as shown in fig. 4, the inside of the center electrode portion 35 is filled with the insulating dielectric layer 20.

In one embodiment, as shown in fig. 4, the first electrode region includes one central electrode portion 35, 3 first branch portions 312, and 3 groups of first arc portions, an included angle between two adjacent first branch portions 312 is 120 °, and each group of first arc portions includes 11 first arc electrodes 311; the second electrode area comprises an edge electrode part 37, 3 second branch parts 322 and 3 groups of second arc parts, the included angle between every two adjacent second branch parts 322 is 120 degrees, and each group of second arc parts comprises 11 second arc electrodes 321; the edge electrode portion 37 is a major arc having an opening, and the center electrode portion 35 is a full circular ring shape.

In one embodiment, the central electrode portion 35 is a major arc with one opening.

In one embodiment, the edge electrode portion 37 is a full annular shape.

The invention can improve the space utilization rate of the arc electrode while ensuring that the first electrode region and the second electrode region can be connected by one electrode connection point by arranging the central electrode part 35 or the edge electrode part 37 in a whole circular ring shape, thereby obtaining higher electrode density on the same area, generating larger gradient force, further improving the adsorption force of the electrostatic adsorption device and improving the adsorption reliability of the substrate 40 to be adsorbed with high resistivity.

In one embodiment, the center circular arc portion, the first circular arc portion and the first branch portion 312 may be integrally formed, and the edge circular arc portion, the second circular arc portion and the second branch portion 322 may be integrally formed.

In one embodiment, the first electrode region and the second electrode region are high melting point, high conductivity materials such as tungsten, silver, platinum, copper, and the like.

Specifically, after the first electrode region and the second electrode region are disposed on the carrier layer 10, the insulating dielectric layer 20 is covered on the first electrode region and the second electrode region, so that the insulating dielectric layer 20 completely covers the exposed surfaces of the first electrode region and the second electrode region and fills the gaps between respective adjacent portions of the first electrode region and the second electrode region.

In one embodiment, the area ratio of the first electrode region and the second electrode region is greater than 0 and equal to or less than 10, or the area ratio of the second electrode region and the first electrode region is greater than 0 and equal to or less than 10.

In one embodiment, the area ratio of the first electrode region and the second electrode region is 1 or more and 5 or less, or the area ratio of the second electrode region and the first electrode region is 1 or more and 5 or less.

In one embodiment, the area ratio of the first electrode region and the second electrode region is equal to 1.

The invention can maximize the gradient force by arranging the areas of the first electrode area and the second electrode area to be equal, thereby maximizing the adsorption force generated by the first electrode area and the second electrode area. Specifically, as shown in fig. 7, which is a table of correspondence between the area ratio of the first electrode region and the second electrode region obtained by simulation and the electrostatic attraction force, and as shown in fig. 8, which is a graph of correspondence between the area ratio of the first electrode region and the second electrode region obtained by simulation and the electrostatic attraction force, it is known that when the area ratio of the first electrode region and the second electrode region is 1, the electrostatic attraction force obtained is maximum and is far higher than the electrostatic attraction force of other area ratios, and the area ratio is 1, so that the maximization of the electrostatic attraction force can be achieved.

In one embodiment, a length L1 of each first circular arc electrode 311 along a radial direction 11 of the circular plane is greater than or equal to 0.3mm and less than 0.5 mm, and a length L2 of each second circular arc electrode 321 along a radial direction 11 of the circular plane is greater than or equal to 0.3mm and less than 0.5 mm.

According to the invention, the length range of the first arc electrode 311 and the second arc electrode 321 along the radial direction 11 of the circular plane is set, so that the width of the first arc electrode 311 is minimized, meanwhile, the phenomenon that high voltage breakdown and other bad phenomena are caused by too close distance between the arc electrodes is avoided, the gradient force generated by the electrostatic adsorption device is maximized, and meanwhile, the normal operation of the adsorption force generated by the electrodes is ensured.

In one embodiment, the radial 11 length L1 of each first circular arc electrode 311 along the circular plane is equal to the radial 11 length L2 of each second circular arc electrode 321 along the circular plane.

According to the invention, the lengths of the first arc electrode 311 and the second arc electrode 321 along the radial direction 11 of the circular plane are equal, so that the non-uniform electric field intensity generated by the electrostatic adsorption device is higher, the gradient force is larger, and the adsorption reliability of the substrate 40 to be adsorbed with high resistivity is improved.

In one embodiment, the separation distances D1 between the first and second circular arc electrodes 311 and 321, each of which is adjacent in the radial direction 11 of the circular plane, are equal.

According to the invention, the first arc electrode 311 and the second arc electrode 321 which are adjacent along the radial direction 11 of the circular plane are arranged at equal intervals, so that the non-uniform electric field intensity generated by the electrostatic adsorption device is higher, the gradient force is larger, and the adsorption reliability of the substrate 40 to be adsorbed with high resistivity is improved.

In one embodiment, the separation distance D1 between each of the first circular arc electrode 311 and the second circular arc electrode 321 adjacent in the radial direction 11 of the circular plane is 0.5 mm or more and 10 mm or less.

The invention sets the interval distance between the first arc electrode 311 and the second arc electrode 321 which are adjacent in the radial direction 11, so that the interval distance is not excessively large, the area of the first electrode region and the area of the second electrode region are obviously reduced, and the strength of electrostatic adsorption force is prevented from being influenced; meanwhile, the insulation and isolation effect between the first arc electrode 311 and the second arc electrode 321 is poor due to the fact that the interval distance is not too small, and adverse phenomena such as high-voltage breakdown are avoided.

Preferably, the distance between each of the first and second circular arc electrodes 311 and 321 adjacent in the radial direction 11 of the circular plane is 3mm.

In one embodiment, the distance D1 between each first arc electrode 311 and each second arc electrode 321 adjacent to each other along the radial direction 11 of the circular plane is equal, so that the first arc electrode 311 and the second arc electrode 321 are uniformly distributed, and the electrostatic attraction force can be further maximized; at this time, R _1（a+1）=R_1a +2×d1+l1+l2, where R _1（a+1） is a radius corresponding to the first arc electrode 311 of the a+1 th layer outward from the central electrode portion 35 along the circular plane radial direction 11, and R _1a is a radius corresponding to the first arc electrode 311 of the a-th layer; r _2（a+1）=R_2a +2×d1+l1+l2, where R _2（a+1） is a radius corresponding to the second arc electrode 321 of the a+1 th layer outward from the central electrode portion 35 along the circular plane radial direction 11, and R _2a is a radius corresponding to the second arc electrode 321 of the a-th layer.

Preferably, the electrostatic adsorption device further includes a protective layer, which covers the insulating dielectric layer 20, and is used for contacting the substrate 40 to be adsorbed by the electrostatic adsorption device, and the volume resistivity of the protective layer is greater than or equal to 10 ¹⁴ Ω·cm.

According to the invention, the protective layer is arranged on the surface of the insulating medium layer 20, so that the wear resistance of the electrostatic adsorption device can be improved, and the service life and reliability of the electrostatic adsorption device can be improved; meanwhile, by using the insulating medium layer 20 with high volume resistivity, the leakage current of the electrostatic adsorption device is reduced, so that the adsorption and holding time of the electrostatic adsorption device to the substrate 40 to be adsorbed is longer, and the adsorption reliability of the electrostatic adsorption device is improved.

In one embodiment, as shown in fig. 1, a bump layer 41 may be further disposed between the insulating medium layer 20 and a protective layer (not shown) of the electrostatic adsorption device, where the protective layer covers the exposed surface of the bump layer 41.

In one embodiment, the bump layer 41 is of a material that is consistent with the material of the insulating dielectric layer 20.

In one embodiment, bump layer 41 may be formed on dielectric layer 20 by an exposure etch sandblasting process or the like.

In one embodiment, the protective layer may be bonded to the bump layer 41 by vapor deposition, magnetron sputtering, or the like.

Specifically, the electrostatic adsorption device provided with the bump layer 41 increases the particle containing space between the substrate 40 to be adsorbed and the electrostatic adsorption device through the existence of the bump, reduces the risk of damage to the surface of the substrate 40 to be adsorbed caused by direct clamping of particles to the contact surface between the substrate 40 to be adsorbed and the electrostatic adsorption device, and improves the yield of the substrate 40 to be adsorbed after the electrostatic adsorption device adsorbs; at the same time, however, the presence of the bump layer 41 reduces the polarized electric field between the substrate 40 to be adsorbed and the electrostatic adsorbing device, thereby reducing the adsorption force strength of the electrostatic adsorbing device to the substrate 40 to be adsorbed. The person skilled in the art can choose whether to provide the bump layer 41 according to the requirements of the surface quality and the adsorption strength of the substrate 40 to be adsorbed in practical application, and the present embodiment is mainly used to provide a stronger adsorption force for the substrate 40 to be adsorbed with high resistivity, so that it is preferable not to provide the bump layer 41.

Preferably, the bulk resistivity of the insulating dielectric layer 20 is 10 ¹⁴ Ω·cm or more.

The invention can reduce the leakage current of the electrostatic adsorption device by using the insulating medium layer 20 with high volume resistivity, thereby enabling the electrostatic adsorption device to adsorb and hold the substrate 40 for a longer time and improving the adsorption reliability of the electrostatic adsorption device.

In one embodiment, the thickness of the insulating dielectric layer 20 is 10 microns to 1 mm.

By setting the thickness range of the insulating medium layer 20, the invention ensures that stronger gradient force is generated so as to realize better adsorption effect on the substrate 40 to be adsorbed.

Preferably, the insulating dielectric layer 20 has a high melting point.

In one embodiment, the material of the insulating dielectric layer 20 is a high melting point, high bulk resistivity material such as alumina, alN, polyimide, or the like.

In one embodiment, the volume resistivity of the substrate 40 to be adsorbed is 10 ¹³ Ω·cm or more. Specifically, the bulk resistivity of the to-be-adsorbed matrix 40 may be a smaller value, but the solution of the present invention can be embodied to achieve the adsorption effect on the to-be-adsorbed matrix 40 with high resistivity that cannot be adsorbed by the prior art when the bulk resistivity of the to-be-adsorbed matrix 40 is higher.

In one embodiment, the substrate 40 to be adsorbed is sapphire, a glass substrate, a ceramic substrate, etc., and may be other suitable materials.

In one embodiment, as shown in fig. 1, the electrostatic adsorption device further includes a carrier layer 10, the first electrode region and the second electrode region are located on the upper surface of the carrier layer 10, and an insulating medium layer 20 filled in the gap between the first electrode region and the second electrode region is also located on the upper surface of the carrier layer 10.

In one embodiment, the first electrode region and the second electrode region may be connected to the bottom carrier layer 10 by spraying, vapor deposition, printing, or the like, respectively, and then sintered at a high temperature to tightly bond the first electrode region and the second electrode region to the carrier layer 10.

In one embodiment, the insulating medium layer 20 may be tightly bonded to the underlying carrier layer 10 by printing or casting, high temperature co-firing, or the like.

In one embodiment, after the basic structure of the electrostatic chuck is prepared, the final electrostatic chuck is manufactured by grinding, polishing and cleaning.

Example 2:

The present embodiment provides an electrostatic adsorbing apparatus, and other features of the electrostatic adsorbing apparatus are substantially the same as those of embodiment 1, except that:

in this embodiment, as shown in fig. 9, the center electrode portion 35 has a hollow hole 34 therein.

According to the invention, the hollow hole 34 is formed in the central electrode part 35, so that a moving space is provided for the electrostatic adsorption device in the process of transferring and delivering the substrate 40 to be adsorbed, damage caused by collision between the delivery device and the electrostatic adsorption device in the vertical movement is avoided, the reliability and the safety of the electrostatic adsorption device are improved, and the substrate 40 to be adsorbed and the delivery device are protected.

In one embodiment, as shown in fig. 9, the first electrode region includes one central electrode part 35, 3 first branch parts 312, and 3 sets of first circular arc parts, each set of first circular arc parts including 11 first circular arc electrodes 311; the second electrode region includes one edge electrode portion 37, 3 second branch portions 322, and 3 sets of second arc portions, each set of second arc portions including 11 second arc electrodes 321; the edge electrode portion 37 is a major arc having an opening, and the center electrode portion 35 is a full circular ring shape.

In one embodiment, as shown in fig. 10 to 13, where fig. 10 is an overall top view of the electrostatic adsorbing device, fig. 11 is an enlarged detail view of a portion C of the electrostatic adsorbing device in fig. 10, fig. 12 is an enlarged detail view of a portion D of the electrostatic adsorbing device in fig. 10, fig. 13 is an enlarged detail view of a portion E of the electrostatic adsorbing device in fig. 10, a space-saving region 33 exists in a radial direction 11 of a circular plane on which the first branch portion 312 and the second branch portion 322 lie, and the first arc electrode 311, the second arc electrode 321, the first branch portion 312, and the second branch portion 322 adjacent to the space-saving region 33 are subjected to space-saving deformation setting to obtain a space for setting the space-saving region 33.

According to the invention, the clearance area 33 is arranged on the radial direction 11 of the circular plane where the first branch part 312 and the second branch part 322 are arranged, so that space is provided for the fixing structure of the electrostatic adsorption device in the process chamber and the extension and retraction of the thimble (pin), and the reliability of the fixed installation of the electrostatic adsorption device in the process chamber is improved. Specifically, when the clearance area 33 passing through the electrostatic adsorption device is required to fix the electrostatic adsorption device or stretch the ejector pin, the clearance area 33 is set according to the requirement.

Specifically, as shown in fig. 10, including 3 empty areas 33, other suitable number of empty areas 33 may be selected according to the requirement.

In one embodiment, as shown in fig. 10, the first electrode region includes one central electrode part 35, 3 first branch parts 312, and 3 sets of first circular arc parts, each set of first circular arc parts including 11 first circular arc electrodes 311; the second electrode region includes one edge electrode portion 37, 3 second branch portions 322, and 3 sets of second arc portions, each set of second arc portions including 11 second arc electrodes 321; the edge electrode portion 37 is a major arc having an opening, and the center electrode portion 35 is a full circular ring shape.

Example 3:

In this embodiment, as shown in fig. 14 to 17, in which fig. 14 is an overall top view of the electrostatic adsorbing device, fig. 15 is an enlarged detail F portion of the electrostatic adsorbing device in fig. 14, fig. 16 is an enlarged detail G portion of the electrostatic adsorbing device in fig. 14, and fig. 17 is an enlarged detail H portion of the electrostatic adsorbing device in fig. 14, each group of first circular arc portions is disposed on one side of the first branch portion 312 along the first circumferential direction 13 of the circular plane and one side along the second circumferential direction 14 of the circular plane, which are correspondingly connected; each group of second circular arc parts are distributed on one side of the corresponding connected second branch parts 322 along the first circumferential direction 13 of the circular plane and one side of the corresponding connected second branch parts along the second circumferential direction 14 of the circular plane; one of the first circumferential direction 13 and the second circumferential direction 14 is clockwise, and the other is counterclockwise.

The invention realizes another different electrode arrangement mode by arranging the different arc parts in the arrangement direction of the corresponding branch parts as in the embodiment 1, and a person skilled in the art can select a proper electrode arrangement mode according to specific requirements.

Specifically, in the above, as shown in fig. 15, "each group of the first arc portions is distributed on one side of the corresponding connected first branch portion 312 in the circular-plane first circumferential direction 13 and one side of the corresponding connected first branch portion 14" means that any one of the first arc portions 311 of any one group extends from the corresponding connected first branch portion 312 in the circular-plane first circumferential direction 13 and one side of the corresponding connected first branch portion 312 in the circular-plane second circumferential direction 14 at the same time, and any one of the first arc electrodes 311 of any one group is distributed on one side of the corresponding connected first branch portion 312 in the circular-plane first circumferential direction 13 and one side of the corresponding connected first branch portion 312 in the circular-plane second circumferential direction 14 are connected as one whole first arc electrode 311 by the first branch portion 312; "each set of the second circular arc portions is distributed on one side of the corresponding connected second branch portion 322 along the circular plane first circumferential direction 13 and one side of the corresponding connected second branch portion 322 along the circular plane second circumferential direction 14" means that any one of the second circular arc electrodes 321 in any one set of the second circular arc portions extends from the corresponding connected second branch portion 322 along one side of the circular plane first circumferential direction 13 and one side of the corresponding connected second branch portion 322 along the circular plane second circumferential direction 14 at the same time, and any one of the second circular arc electrodes 321 in any one set of the second circular arc portions is distributed on one side of the corresponding connected second branch portion 322 along the circular plane first circumferential direction 13 and one side of the corresponding connected second branch portion 322 along the circular plane second circumferential direction 14 is connected into one integral second circular arc electrode 321 through the second branch portion 322.

In one embodiment, as shown in fig. 15, the first arc electrodes 311 on the side of the first circumferential direction 13 of the circular plane and the first arc electrodes 311 on the side of the second circumferential direction 14 of the circular plane, which are distributed in the first branch portions 312 of each group to which they are connected, are symmetrically distributed with respect to the corresponding first branch portions 312; the second arc electrodes 321 of each group of the second arc portions on the side of the second branch portion 322 connected thereto in the circular-plane first circumferential direction 13 and the second arc electrodes 321 of each group of the second arc portions on the side of the circular-plane second circumferential direction 14 are symmetrically distributed with respect to the corresponding second branch portion 322.

In one embodiment, the first arc electrodes 311 of each group of the first arc portions distributed on the side of the first branch portion 312 connected thereto in the circular-plane first circumferential direction 13 and the first arc electrodes 311 of each group of the first arc portions on the side of the circular-plane second circumferential direction 14 are asymmetrically distributed with respect to the corresponding first branch portion 312; the second arc electrodes 321 of each group of the second arc portions on the side of the second branch portion 322 connected thereto in the circular-plane first circumferential direction 13 and the second arc electrodes 321 of each group of the second arc portions on the side of the circular-plane second circumferential direction 14 are asymmetrically distributed with respect to the corresponding second branch portion 322.

Specifically, in the present embodiment, as shown in fig. 14, the inside of the center electrode portion 35 is filled with the insulating dielectric layer 20.

Example 4:

the present embodiment provides an electrostatic adsorbing apparatus, and other features of the electrostatic adsorbing apparatus are substantially the same as those of embodiment 3, except that:

in this embodiment, as shown in fig. 18, the center electrode portion 35 has a hollow hole 34 therein.

According to the invention, the hollow hole 34 is formed in the central electrode part 35, so that a moving space is provided for the electrostatic adsorption device in the process of transferring the substrate 40 to be adsorbed, damage caused by collision of the motion device or the substrate 40 to be adsorbed and the electrostatic adsorption device is avoided, the reliability and the safety of the electrostatic adsorption device are improved, and the substrate 40 to be adsorbed and the handover device are protected.

In one embodiment, as shown in fig. 18, the first electrode region includes one central electrode portion 35, 1 first branch portion 312, and 1 set of first circular arc portions, each set of first circular arc portions including 11 first circular arc electrodes 311; the second electrode region includes one edge electrode portion 37, 1 second branch portion 322, and 1 set of second circular arc portions, each set of second circular arc portions including 11 second circular arc electrodes 321.

In one embodiment, as shown in fig. 19-22, where fig. 19 is an overall top view of the electrostatic chuck, fig. 20 is an enlarged detail view of a portion I of the electrostatic chuck of fig. 19, fig. 21 is an enlarged detail view of a portion J of the electrostatic chuck of fig. 19, and fig. 22 is an enlarged detail view of a portion K of the electrostatic chuck of fig. 19, the first electrode region includes one central electrode portion 35, 3 first branch portions 312, and 3 sets of first circular arc portions, each set of first circular arc portions including 23 first circular arc electrodes 311; the second electrode region includes one edge electrode portion 37, 3 second branch portions 322, and 3 sets of second arc portions, each set of second arc portions including 23 second arc electrodes 321; the center electrode portion 35 and the edge electrode portion 37 are each in a full circular shape.

In one embodiment, as shown in fig. 23 to 26, where fig. 23 is an overall top view of the electrostatic adsorbing device, fig. 24 is an enlarged detail view of an L portion of the electrostatic adsorbing device in fig. 23, fig. 25 is an enlarged detail view of an M portion of the electrostatic adsorbing device in fig. 23, fig. 26 is an enlarged detail view of an N portion of the electrostatic adsorbing device in fig. 23, and a space 33 is formed on a circular plane radial 11 where the first branch portion 312 and the second branch portion 322 lie, and the first arc electrode 311, the second arc electrode 321, the first branch portion 312, and the second branch portion 322 adjacent to the space 33 are arranged in a space deformation manner.

In one embodiment, as shown in fig. 23 to 26, the first electrode region includes one central electrode portion 35, 3 first branch portions 312, and 3 sets of first circular arc portions, each set of first circular arc portions including 23 first circular arc electrodes 311; the second electrode region includes one edge electrode portion 37, 3 second branch portions 322, and 3 sets of second arc portions, each set of second arc portions including 23 second arc electrodes 321; the center electrode portion 35 and the edge electrode portion 37 are each in a full circular shape.

In summary, according to the electrostatic adsorption device disclosed by the invention, the first electrode area and the second electrode area can be electrically connected with the whole electrode through one electrode connection point respectively in a distribution mode, so that the wiring space required by the back of the electrostatic adsorption device is reduced, and the integration and the debugging of the electrostatic adsorption device are facilitated; meanwhile, the first arc electrode 311 and the second arc electrode 321 are arranged along the width and the number of the radial direction 11 of the circular plane, so that gradient force with strong electric field strength is generated, the adsorption force of the electrostatic adsorption device is greatly improved, and the adsorption reliability of the substrate 40 to be adsorbed with higher resistivity can be realized; in addition, by arranging the clearance area 33, a moving space is provided for the electrostatic adsorption device in the transfer process of the substrate 40 to be adsorbed, so that collision is avoided, the reliability of the electrostatic adsorption device is improved, and the substrate 40 to be adsorbed and the transfer device are protected; finally, by providing the center electrode portion 35 and the edge electrode portion 37 in a full circular shape, electrode distribution of a larger area can be realized while maintaining a single electrode connection point, and the adsorption capacity can be further improved.

Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims

1. An electrostatic chuck, the electrostatic chuck comprising: the device comprises an insulating medium layer (20), a first electrode region and a second electrode region, wherein the cross section of the insulating medium layer (20) with a preset height is a circular plane;

The first electrode region comprises a central electrode part (35), m first branch parts (312) and m groups of first arc parts, and each group of first arc parts comprises n first arc electrodes (311); the center electrode part (35) is in a first circular arc shape which coincides with the center of the circular plane, the first branch parts (312) extend along the radial direction (11) of the circular plane, and m first branch parts (312) are all connected with the periphery of the center electrode part (35); each group of the first arc parts is correspondingly connected with the first branch parts (312) in pairs, and n first arc electrodes (311) in the same group of the first arc parts are arcs with different radiuses and corresponding n concentric circles larger than the first arc on the same central angle;

The second electrode region comprises an edge electrode part (37), m second branch parts (322) and m groups of second arc parts, and each group of second arc parts comprises n second arc electrodes (321); the edge electrode part (37) is in a second circular arc shape which coincides with the center of the circular plane, the second branch parts (322) extend along the radial direction (11) of the circular plane, and m second branch parts (322) are connected with the inner periphery of the edge electrode part (37); each group of the second arc parts is correspondingly connected with the second branch parts (322) in pairs, and n second arc electrodes (321) in the same group of the second arc parts are arcs with different radiuses and smaller than the corresponding n concentric circles of the second arc parts on the same central angle;

m is an integer greater than or equal to 1, n is an integer greater than 2; the first electrode region and the second electrode region are opposite in electric polarity; the first arc electrodes (311) and the second arc electrodes (321) which are adjacent to each other along the radial direction (11) of the circular plane are distributed in an interdigital staggered manner, and the insulating medium layer (20) covers the exposed surfaces of the first arc electrodes (311) and the second arc electrodes (321) and fills gaps between the surfaces of the first arc electrodes and the second arc electrodes; the radius of the central electrode part (35) is smaller than the radius of any second circular arc electrode (321), and the radius of the edge electrode part (37) is larger than the radius of any first circular arc electrode (311);

The length of each first arc electrode (311) along the radial direction (11) of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm, and the length of each second arc electrode (321) along the radial direction (11) of the circular plane is greater than or equal to 0.3 mm and less than or equal to 5 mm.

2. The electrostatic clamp according to claim 1, characterized in that each group of the first circular-arc portions is distributed on the same side of the first branch portion (312) to which it is connected, along the first circumferential direction (13) of the circular plane; each group of the second arc parts are distributed on the same side of the second branch parts (322) which are correspondingly connected with the second arc parts along the second circumferential direction (14) of the circular plane; one of the first circumferential direction (13) and the second circumferential direction (14) is clockwise and the other is counterclockwise.

3. Electrostatic clamping device according to claim 1, characterized in that each set of the first circular-arc portions is distributed on one side of the first branch portion (312) of its corresponding connection in the circular plane first circumferential direction (13) and on one side in the circular plane second circumferential direction (14); each group of the second arc parts is distributed on one side of the corresponding connected second branch parts (322) along the first circumferential direction (13) of the circular plane and one side of the corresponding connected second branch parts along the second circumferential direction (14) of the circular plane; one of the first circumferential direction (13) and the second circumferential direction (14) is clockwise and the other is counterclockwise.

4. An electrostatic chuck according to any one of claims 1-3, wherein a void region (33) is present in the radial direction (11) of the circular plane in which the first branch portion (312) and the second branch portion (322) are located, and the first arc electrode (311), the second arc electrode (321), the first branch portion (312) and the second branch portion (322) adjacent to the void region (33) are subjected to a void deformation setting to obtain a space in which the void region (33) is disposed.

5. An electrostatic chuck according to any one of claims 1-3, characterized in that the central electrode portion (35) is internally hollow (34).

6. An electrostatic chuck according to any one of claims 1-3, wherein the central electrode portion (35) is a major arc with an opening; or the central electrode part (35) is in a whole circular shape;

the edge electrode part (37) is a major arc with an opening; or the edge electrode part (37) is in a whole circular shape.

7. The electrostatic chuck of any one of claims 1-3, wherein an area ratio of the first electrode region to the second electrode region is greater than 0 and equal to or less than 10, or an area ratio of the second electrode region to the first electrode region is greater than 0 and equal to or less than 10.

8. The electrostatic chuck of any one of claims 1-3, wherein an area ratio of the first electrode region and the second electrode region is equal to 1.

9. A static electricity adsorption device according to any one of claims 1 to 3 wherein the length of each first circular arc electrode (311) along the radial direction (11) of the circular plane is 0.3 mm or more and 0.5 mm or less, and the length of each second circular arc electrode (321) along the radial direction (11) of the circular plane is 0.3 mm or more and 0.5 mm or less.

10. A device according to any one of claims 1-3, characterized in that the radial (11) length of each first circular arc electrode (311) along the circular plane is equal to the radial (11) length of each second circular arc electrode (321) along the circular plane.

11. A device according to any one of claims 1-3, characterized in that the distance between the first circular arc electrode (311) and the second circular arc electrode (321) adjacent to each other in the radial direction (11) of the circular plane is equal.

12. An electrostatic chuck according to any one of claims 1 to 3, wherein each of the first arc electrodes (311) and the second arc electrodes (321) adjacent to each other in the radial direction (11) of the circular plane has a separation distance of 0.5mm or more and 10 mm or less.

13. A device according to any one of claims 1-3, further comprising a protective layer covering the insulating dielectric layer (20), the protective layer being for contact with a substrate (40) to be adsorbed by the device, the protective layer having a bulk resistivity of 10 ¹⁴ Ω -cm or more.

14. An electrostatic chuck according to any one of claims 1 to 3, wherein the bulk resistivity of the insulating dielectric layer (20) is 10 ¹⁴ Ω -cm or more.