CN118824833B - Dry etching equipment - Google Patents
Dry etching equipment Download PDFInfo
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- CN118824833B CN118824833B CN202411289017.3A CN202411289017A CN118824833B CN 118824833 B CN118824833 B CN 118824833B CN 202411289017 A CN202411289017 A CN 202411289017A CN 118824833 B CN118824833 B CN 118824833B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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Abstract
The invention provides dry etching equipment which comprises a vacuum cavity, a supporting seat, a plasma excitation unit, an etching gas generation unit and a film thickness tester, wherein the supporting seat is arranged in the vacuum cavity and used for bearing a wafer, the wafer is used for dividing the vacuum cavity into an upper cavity part and a lower cavity part along the height direction of the vacuum cavity, the supporting seat is positioned at the lower cavity part, the plasma excitation unit is used for forming plasma gas used for dry etching, the etching gas generation unit is used for providing etching gas used for dry etching, the film thickness tester comprises a light emitting source and a receiver, the light emitting source is used for emitting detection light signals to the inner wall of the upper cavity, and the receiver is used for receiving reflection light signals reflected by the inner wall of the upper cavity and determining the thickness of a polymer on the inner wall of the upper cavity according to the change of a reflection light signal path. The invention can solve the technical problem of low yield of wafer products caused by that the polymer is easy to drop onto the surface of the wafer.
Description
Technical Field
The invention relates to the field of semiconductor equipment, in particular to dry etching equipment.
Background
The dry etching equipment is one of the core equipment for semiconductor manufacture, and its etching principle is that electron gas generates glow discharge plasma under the action of magnetic field or electric field, etching material chemically and physically reacts under the action of plasma to form gaseous by-products, and the by-products desorbed from the wafer surface diffuse through boundary layer into convection air flow, and are discharged from the process chamber under the action of vacuum pump.
In the dry etching process, volatile byproducts can generate unsaturated substances in the chemical etching process, and the unsaturated substances can generate chain reaction to generate polymers, and the polymers can be deposited on the surfaces of components in the process chamber such as chamber walls, insulating rings, upper cover plates, chamber bottom buffer plates and the like. With the extension of etching time, the polymer deposited on the upper cover plate and the chamber wall is continuously thickened, so that the polymer falls onto the surface of the wafer being etched to form etching material residues, and the probability of the wafer product yield is reduced.
Disclosure of Invention
In order to solve the above problems, the present invention provides a dry etching apparatus, which can improve the technical problem of low yield of wafer products caused by that polymers are easy to drop onto the surface of a wafer in the etching process.
In order to achieve the above and other related objects, the present invention provides a dry etching apparatus comprising a vacuum chamber, a support base, a plasma excitation unit, an etching gas generation unit and a film thickness tester, wherein the support base is disposed in the vacuum chamber and is used for carrying a wafer, the wafer divides the vacuum chamber into an upper chamber portion and a lower chamber portion along a height direction of the vacuum chamber, the support base is disposed at the lower chamber portion, the plasma excitation unit is used for forming plasma gas used for dry etching, the etching gas generation unit is used for providing etching gas used for dry etching, the film thickness tester comprises a light emitting source and a receiver, the light emitting source is used for emitting a detection light signal to an inner wall of the upper chamber portion, and the receiver is used for receiving a reflection light signal reflected by the inner wall of the upper chamber portion and determining a thickness of a polymer on the inner wall of the upper chamber portion according to a change of a reflection light signal path.
In an example of the dry etching apparatus of the present invention, the vacuum chamber includes a surrounding side wall, a top wall and a bottom wall, the top wall and the bottom wall being respectively disposed at two ends of the height direction of the side wall, and the support base is disposed at the bottom wall, and the detection light signal is reflected to the receiver after being irradiated to the side wall above the support base.
In an example of the dry etching apparatus of the present invention, the sidewall is made of aluminum.
In an example of the dry etching apparatus of the present invention, a position where the detection light irradiates the sidewall is set as a detection point, and a dimension of the detection point from the upper surface of the wafer is smaller than a dimension of the detection point from the ceiling wall along a height direction of the vacuum chamber.
In an example of the dry etching apparatus of the present invention, the support base includes an electrostatic chuck for mounting the wafer and an insulating ring provided at an outer periphery of the electrostatic chuck, and the receiver is fixedly mounted to the insulating ring.
In one example of the dry etching apparatus of the present invention, the receiver is embedded in the insulating ring.
In an example of the dry etching apparatus of the present invention, the insulating ring is made of ceramic or quartz.
In an example of the dry etching apparatus of the present invention, a wall of the vacuum chamber is provided with a light-transmitting region through which the detection light signal penetrates, the light-emitting source is disposed outside the vacuum chamber, and a light outlet of the light-emitting source is opposite to the light-transmitting region.
In an example of the dry etching device, the vacuum cavity is provided with an opening, the opening is positioned above the supporting seat, an upper cover plate is connected at the opening in a sealing way, the upper cover plate is made of a light-transmitting material, and the light-emitting source is arranged on the upper cover plate.
In an example of the dry etching device, a protecting cover is arranged on the outer side of the vacuum cavity, a containing cavity for containing cooling medium is formed between the protecting cover and the outer wall of the vacuum cavity, and the light-emitting source is arranged in the containing cavity.
According to the dry etching equipment, by arranging the film thickness tester, on one hand, the real-time monitoring of the polymer attaching thickness on the inner wall of the upper part of the cavity can be realized in the etching process, so that an operator can timely find the abnormal thickness of the polymer in the vacuum cavity, and the interference can be conveniently performed in time, and further the probability of etching material residue on the surface of the wafer caused by polymer falling in the etching process can be reduced, and the product yield of the wafer can be improved. On the other hand, in the vacuum cavity cleaning process, the residual thickness of the polymer on the inner wall of the vacuum cavity can be monitored in real time through the film thickness tester to judge whether the vacuum cavity is cleaned, so that the cleaning effect of the vacuum cavity can be ensured, the waste of production time caused by excessive cleaning can be avoided, and the normal use time of the interference etching equipment can be correspondingly improved, so that the etching production efficiency of wafers is ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of an embodiment of a dry etching apparatus according to the present invention;
FIG. 2 is an enlarged view of a portion of area A in FIG. 1;
FIG. 3 is a schematic view of a transmission path of the probe light emitted from the light source when the probe light irradiates the polymer with a thickness d 1;
fig. 4 is a schematic view of a transmission path of the probe light emitted from the light emitting source when the probe light is irradiated to the polymer with a thickness d 2.
Description of element reference numerals
10. Dry etching equipment, 11, vacuum chamber, 101, upper chamber portion, 102, lower chamber portion, 111, sidewall, 112, bottom wall, 113, top wall, 114, upper cover plate, 115, opening, 120, support base, 121, electrostatic chuck, 1211, wafer support surface, 122, insulating ring, 1221, recess, 123, fixture, 124, focus ring, 1241, positioning portion, 1242, mounting portion, 130, plasma excitation unit, 140, etching gas generation unit, 141, gas transmission device, 142, deflector, 150, film thickness tester, 151, light emitting source, 152, receiver, 160, protective cover, 170, accommodation chamber, 180, host controller, 20, wafer, 30, polymer.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In the present application, it should be noted that, as terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., appear, the indicated orientation or positional relationship is based on that shown in the drawings, only for convenience of description and simplification of the description, and does not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the application. Furthermore, the terms "first," "second," and the like, as used herein, are used for descriptive and distinguishing purposes only and are not to be construed as indicating or implying a relative importance.
The inventor finds that two main methods are adopted when main stream equipment manufacturers on the market solve the problem that the yield of etched products of wafers is reduced due to polymer falling in the dry etching process through research on the existing etching process.
One method is to perform a dry etching automatic cleaning without wafer before and after each wafer etching, which can improve the above problems to a certain extent, but waste a lot of time at the same time, resulting in low production efficiency of the equipment, and meanwhile, there is no means to monitor whether the wafer is clean or over-clean after the automatic cleaning, so there is also a probability of polymer falling off during the etching process.
The other method is that before the wafer manufacturing process, a layer of protective film with a certain thickness is plated on the chamber wall through plasma reaction, so that each time of wafer etching can be performed in the same environment, meanwhile, in the etching process, the protective layer can also protect the side wall from being corroded by plasma, but the thickness of the protective film cannot be monitored in real time, polymers accumulated on the chamber wall can possibly fall off to cause the residual of etching materials on the surface of the wafer, and the yield of wafer products is reduced. In view of this, the inventors have proposed a dry etching apparatus.
Referring to fig. 1 to 4, the dry etching apparatus 10 provided by the present invention can monitor the thickness of the polymer 30 on the inner wall of the vacuum chamber 11 in real time during the etching process by arranging the film thickness tester 150, so as to find out the thickness abnormality of the polymer 30 in time, and facilitate the intervention in time, thereby improving the problem of the reduction of the yield of the wafer 20 product caused by the falling of the polymer 30 from the wall.
Referring to fig. 1 and 2, the dry etching apparatus 10 of the present invention includes a vacuum chamber 11, a support base 120, a plasma excitation unit 130, an etching gas generation unit 140, and a film thickness tester 150.
The vacuum chamber 11 may have various shapes, such as a rectangular parallelepiped, a cylindrical body, etc., so as to satisfy the accommodating requirement of the wafer 20 to be etched. In the present embodiment, the vacuum chamber 11 has an approximately cylindrical chamber structure. The vacuum chamber 11 may be an integral chamber structure, or may be a chamber structure formed by splicing a plurality of plates. It should be noted that, in theory, the material of the vacuum cavity 11 may be any material meeting the requirement of the dry etching process, but considering that in the etching process, the vacuum cavity 11 needs effective thermal management to maintain a constant temperature, in practical application, the vacuum cavity 11 is usually made of a metal material with better thermal conductivity, such as stainless steel, aluminum or other special alloys.
The support base 120 is disposed in the vacuum chamber 11 for carrying the wafer 20. The support base 120 may be fixedly connected with the vacuum chamber 11, or may be directly placed on the bottom wall 112 of the vacuum chamber 11, so long as the support base 120 can keep a fixed position with respect to the vacuum chamber 11 during etching. The wafer 20 may be fixed to the support base 120 by electrostatic adsorption, magnetic adsorption, vacuum adsorption, or other methods, which is not limited in this embodiment. Along the height direction of the vacuum chamber 11 (as shown in the Z-axis of fig. 1), the wafer 20 divides the vacuum chamber 11 into a chamber upper portion 101 and a chamber lower portion 102, and the support base 120 is located at the chamber lower portion 102.
The etching gas generating unit 140 includes a gas transmitting device 141 and a guiding device 142, the gas transmitting device 141 is used for providing etching gas used for dry etching, and the guiding device 142 is arranged at the gas outlet end of the gas transmitting device 141 to guide the etching gas. In the present embodiment, the flow guiding device 142 is a gas dispersion disk disposed inside the vacuum chamber 11. The plasma excitation unit 130 is used to form a plasma gas for dry etching, and in particular, the plasma laser unit may include a radio frequency power supply, a coupling coil, an electrode system, and the like. After the etching gas is input into the vacuum chamber 11 through the gas transmission device 141 and the flow guiding device 142, the rf power supply applies a high-frequency electric field through the coupling coil or the electrode system, so that the etching gas molecules absorb energy and ionize to form plasma. Ions and neutral active particles in the plasma physically and chemically react with the surface of the material to be etched, resulting in removal of the material and etching of the wafer 20. Most of byproducts (usually volatile chemical substances) generated in the etching process are pumped out by the vacuum system, and a small part of byproducts generate unsaturated substances in the chemical etching process, and chain reaction occurs between the unsaturated substances to generate polymers 30 which are not easy to volatilize, and the polymers 30 can be adsorbed on exposed surfaces of various parts in the vacuum cavity 11, such as inner walls of the vacuum cavity 11, outer side walls of the supporting seat 120, and the like.
As the etching time increases, the thickness of the polymer 30 adsorbed on the wall of the vacuum chamber 11 increases gradually, and when the thickness reaches a certain level, the risk of falling off exists, so that the surface of the wafer 20 is polluted, and the product yield of the wafer 20 is affected. And in particular, the inner wall of the upper portion 101 of the chamber above the wafer 20, is positioned where the probability of the polymer 30 falling off to the surface of the wafer 20 is maximized.
Referring to fig. 1 and 2, the film thickness tester 150 includes a light emitting source 151 for emitting a detection light signal to the inner wall of the upper chamber portion 101, and a receiver 152 for receiving a reflection light signal reflected by the inner wall of the upper chamber portion 101 and determining the thickness of the polymer 30 on the inner wall of the upper chamber portion 101 according to a change in the path of the reflection light signal. The receiver 152 is installed inside the vacuum chamber 11, and the light emitting source 151 may be installed inside the vacuum chamber 11 or outside the vacuum chamber 11, as long as it is ensured that the receiver 152 can receive the reflected light signal reflected by the inner wall of the chamber upper part 101. The specific position of the light emitting source 151 for emitting the detection light signal to the inner wall of the chamber upper 101 is not limited, and may be a position close to the surface of the wafer 20 or a position distant from the surface of the wafer 20. One film thickness tester 150 may be provided in the vacuum chamber 11, or a plurality of film thickness testers 150 may be provided. Alternatively, in the present embodiment, a film thickness detector is provided in the vacuum chamber 11 in consideration of equipment cost and installation cost. The polymer 30 in this embodiment is a translucent material through which the detection light passes.
Referring to fig. 1 to 3, when the thickness of the polymer 30 attached to the inner wall of the upper cavity 101 is D1, in the process of irradiating the inner wall of the upper cavity 101 with the detection light signal emitted from the light source 151, the detection light signal enters the polymer 30 from the point a, penetrates the polymer 30 along the path AB, reaches the point B of the inner wall of the upper cavity 101, and reversely penetrates the polymer 30 along the path BC after being reflected by the inner wall of the upper cavity 101, and finally reaches the receiving point D on the receiver 152. Under the condition that the light emitting angle, the light emitting wavelength and the like of the light emitting source 151 are unchanged, when the thickness of the polymer 30 is changed, namely, the thickness of the polymer 30 is thickened from D1 to D2, as shown in fig. 4, the transmission path of the detection light between the polymer and the inner wall of the cavity upper part 101 is correspondingly changed, the transmission path of the detection light is changed from the original ABCD to a new transmission path a ' B ' C ' D ', and comparing fig. 3 and 4, it can be clearly seen that the positions of the point D and the point D ' on the receiver 152 are changed, so that the thickness of the polymer 30 corresponding to different paths can be deduced by quantitatively analyzing the offset change of the position of the receiving point on the receiver 152, thereby realizing the detection of the attached thickness of the polymer 30 on the inner wall of the cavity upper part 101.
By arranging the film thickness tester 150, the real-time monitoring of the adhesion thickness of the polymer 30 on the inner wall of the upper part 101 of the cavity can be realized in the etching process, so that an operator can timely find that the thickness of the polymer 30 in the vacuum cavity 11 is abnormal, and the intervention can be conveniently performed in time, thereby reducing the probability of residual etching materials on the surface of the wafer 20 caused by falling of the polymer 30 in the etching process, and further improving the product yield of the wafer 20. Compared with the method of performing dry etching automatic cleaning of the wafer 20 once before and after each wafer 20 is etched in the prior art, the method in this embodiment only needs to perform cleaning when detecting that the thickness of the polymer 30 reaches the set limit, so that cleaning time can be saved and production efficiency of equipment can be improved. On the other hand, in the cleaning process of the vacuum cavity 11, the residual thickness of the polymer 30 on the inner wall of the vacuum cavity 11 can be monitored in real time by the film thickness tester 150 to judge whether the vacuum cavity 11 is cleaned, so that the cleaning effect of the vacuum cavity 11 can be ensured, the waste of production time caused by excessive cleaning can be avoided, and the normal service time of the interference etching equipment can be correspondingly prolonged to ensure the etching production efficiency of the wafer 20.
Referring to fig. 1, in the present embodiment, the dry etching apparatus 10 further includes a host controller 180 disposed outside the vacuum chamber 11, and the host controller 180 is used to control the etching process of the wafer 20. The receiver 152 may be in electrical communication with the host controller 180 via a wireless sensor to transmit film thickness monitoring data to the host controller 180 for viewing by an operator.
Referring to fig. 1, in an example of the dry etching apparatus 10 of the present invention, the vacuum chamber 11 includes a surrounding sidewall 111, a top wall 113, and a bottom wall 112, and the top wall 113 and the bottom wall 112 are respectively disposed at both ends of the sidewall 111 in the height direction. The supporting base 120 is disposed on the bottom wall 112, and the detection light signal irradiates the side wall 111 above the supporting base 120 and is reflected to the receiver 152. In the present embodiment, the sidewall 111 above the support base 120 refers to a sidewall of the upper portion 101 of the cavity. Although the polymer 30 may be attached to the wall of any position of the vacuum chamber 11 in the vacuum chamber 11, since the surface of the wafer 20 is the most chemically reactive region, the position where the active particles (e.g., ions, radicals) in the plasma directly contact and react with the material, and therefore, the position where the wall of the vacuum chamber 11 is closer to the surface of the wafer 20 is the region where the polymer 30 is more adsorbed, the polymer 30 at the position also reaches the thickness limit first, and then the position where the shedding occurs first. In the present embodiment, since the detection light signal irradiates the side wall 111 above the support base 120 and is reflected to the receiver 152, the detection of the thickness of the polymer 30 at the position of the side wall 111 above the support base 120, which is closer to the surface of the wafer 20 than the top wall 113, can be achieved, and the detection of the thickness of the polymer 30 at this position can be performed to better prevent the polymer 30 from falling off the wall of the vacuum chamber 11.
Referring to fig. 1, although the vacuum chamber 11 may be made of various metal materials that meet the heat dissipation conditions and the usage requirements, alternatively, in an example of the dry etching apparatus 10 of the present invention, the sidewall 111 is made of aluminum. The aluminum material has good thermal conductivity, which is helpful for rapidly transferring and dispersing heat during etching to maintain uniformity of the temperature inside the vacuum chamber 11, and also has good corrosion resistance because a dense oxide film is generally formed on the surface of the aluminum material. Furthermore, the aluminum material has a relatively smooth surface, which facilitates cleaning of the surface-adhering polymer 30. Further, in an embodiment, the surface of the aluminum material on the side facing the vacuum chamber 11 may be further surface anodized to further improve the corrosion resistance and wear resistance of the aluminum material surface, thereby improving the service life of the sidewall 111. In another embodiment, a side surface of the aluminum material facing the vacuum chamber 11 may be further coated with a corrosion-resistant layer having an insulating property, so that corrosion resistance and insulating property of the aluminum material surface may be improved, thereby improving the service life of the sidewall 111.
Referring to fig. 1, in an example of the dry etching apparatus 10 of the present invention, a position where the detection light irradiates the sidewall 111 is set as a detection point (as shown by a point E in fig. 1), a dimension of the detection point from the upper surface of the wafer 20 is H1 along a height direction of the vacuum chamber 11, a dimension of the detection point from the ceiling 113 is H2, and H1 is smaller than H2. The specific values of H1 and H2 are not limited as long as H1 is ensured to be smaller than H2. By this arrangement, the position of the detection point can be further brought close to the surface of the wafer 20, and the thickness of the polymer 30 can be detected at this position, thereby preventing the probability that the polymer 30 is detached from the wall of the vacuum chamber 11. When the E point is a position where the polymer 30 is not attached to the sidewall 111, the probe light irradiates the sidewall 111.
Referring to fig. 1 and 2, in an example of the dry etching apparatus 10 of the present invention, a support base 120 includes an electrostatic chuck 121 for mounting a wafer 20 and an insulating ring 122 disposed at an outer periphery of the electrostatic chuck 121, and a receiver 152 is fixedly mounted to the insulating ring 122. The electrostatic chuck 121 has a wafer support surface 1211, and the wafer 20 is electrostatically attracted to the wafer support surface 1211. The shape of the wafer support surface 1211 may be a variety of shapes such as a circle, a square, or a polygon, provided that the wafer support surface 1211 meets the requirements for supporting the wafer 20. Alternatively, in the present embodiment, the wafer support surface 1211 is a wafer surface shape that is disposed coaxially with the wafer 20. Correspondingly, the electrostatic chuck 121 is a cylindrical structure. The support base 120 further includes a fixing portion 123, where one end of the fixing portion 123 is fixedly connected to the bottom wall 112, and the other end is fixedly connected to an end of the electrostatic chuck 121 where the wafer supporting surface 1211 is not disposed. The insulating ring 122 is sleeved on the periphery of the electrostatic chuck 121 and is fixedly connected with the peripheral wall of the electrostatic chuck 121, and the fixed connection mode can be shaft hole matching connection, adhesive connection, bump groove clamping connection and other modes. The insulating ring 122 may be made of a ceramic material, an insulating resin, or an insulating material such as insulating rubber, which is resistant to corrosion and high temperature. The receiver 152 may be fixedly connected to the insulating ring 122 by a bolt, or may be fixedly connected to the insulating ring 122 by a clamping connection. The position of the receiver 152 on the insulating ring 122 is not particularly limited in this embodiment, as long as the receiver 152 is ensured to accurately receive the detection light signal reflected by the sidewall 111. By mounting the receiver 152 to the insulating ring 122, the receiver 152 can be positioned below the wafer 20, and thus the influence on the detection light signal receiving capability due to the adsorption of the polymer 30 to the receiver 152 can be reduced. Meanwhile, since the position is closer to the detection point on the side wall 111, the reflected signal of the detection light received by the receiver 152 is stronger, which is advantageous for improving the detection accuracy of the film thickness detector.
It should be noted that, referring to fig. 1 and 2, a focus ring 124 is further disposed on the outer periphery of the wafer 20, the focus ring 124 is fixed on the outer periphery of the electrostatic chuck 121, the focus ring 124 includes a positioning portion 1241 and a mounting portion 1242 that are connected to each other, and the positioning portion 1241 surrounds the outer periphery of the wafer 20. Along the radial direction of the wafer 20, one end of the positioning portion 1241 is correspondingly matched with the outer peripheral surface of the wafer 20, and the other end of the positioning portion 1241 is connected with one end of the mounting portion 1242. The mounting part 1242 surrounds the outer circumference of the electrostatic chuck 121 and is fixedly coupled with the outer circumference of the electrostatic chuck 121. Along the axial direction of the wafer 20, one end of the mounting portion 1242 facing away from the positioning portion 1241 abuts against the upper end face of the insulating ring 122 located below. By providing the focus ring 124, a more uniform etch across the wafer 20 surface is facilitated, reducing etch variation due to non-uniformity of plasma density. The uniformity of the etching of the surface of the wafer 20 can be improved.
Referring to fig. 1 and 2, in an example of the dry etching apparatus 10 of the present invention, the receiver 152 is embedded in the insulating ring 122. Specifically, the insulating ring 122 is provided with a groove 1221, the shape of the groove 1221 is matched with the shape of the body of the receiver 152, and the body of the receiver 152 is embedded in the groove 1221, so that the receiver 152 is clamped in the groove 1221, and the fixed mounting of the receiver 152 on the insulating ring 122 is realized. The receiving end of the receiver 152 is exposed to the vacuum chamber 11 so as to receive the probe light signal. By the arrangement, the receiver 152 can be stably and reliably installed in the vacuum cavity 11, and meanwhile, no extra parts are introduced into the vacuum cavity 11, so that the stability of the etching process environment is guaranteed.
Referring to fig. 1 and 2, in an example of the dry etching apparatus 10 of the present invention, the insulating ring 122 is made of ceramic. Compared with other insulating materials, the ceramic material has high temperature resistance and can bear high temperature generated in the dry etching process, and meanwhile, the ceramic material has relatively stable chemical property, has relatively high corrosion resistance and is not easy to react with chemical substances in the etching process, so that the stability of equipment operation is maintained. In addition, the groove 1221 provided on the insulating ring 122 made of ceramic material is not easy to deform during use, and can maintain a relatively stable fixed relationship with the body of the receiver 152, so that the probability of displacement of the receiver 152 during use can be reduced, and the detection accuracy of the film thickness tester 150 on the thickness of the polymer 30 can be ensured. In another embodiment, the insulating ring 122 may also be made of quartz, which also has better high temperature resistance and more stable chemical properties, so that the above-mentioned advantages can be obtained.
In an example of the dry etching apparatus 10 of the present invention, the wall of the vacuum chamber 11 is provided with a light-transmitting region for the penetration of the detection light signal, and the light-transmitting region may be located at any position of the top wall 113, the side wall 111, and the like. The light-transmitting area may be formed by partially forming a hole in the top wall 113 or the side wall 111 and blocking the position of the partial hole with a light-transmitting material, or may be formed by forming the entire top wall 113 with a light-transmitting material or forming either side of the side wall 111 with a light-transmitting material. The light emitting source 151 is disposed outside the vacuum chamber 11, and the light outlet of the light emitting source 151 faces the light transmission area, so that the probe light emitted from the light outlet of the light emitting source 151 passes through the light transmission area and enters the vacuum chamber 11. By this arrangement, the light-emitting source 151 can be mounted outside the vacuum chamber 11, so that the probability that the light-emitting effect is affected by the light-emitting port adsorbing the polymer 30 when the light-emitting source 151 is positioned inside the vacuum chamber can be avoided, and the detection accuracy of the film thickness tester 150 can be further improved.
In order to facilitate taking and placing the wafer 20 from the vacuum chamber 11, referring to fig. 1 and 2, in an example of the dry etching apparatus 10 of the present invention, the vacuum chamber 11 is provided with an opening 115, the opening 115 is located above the supporting seat 120, and the size and shape of the opening 115 are adapted to the diameter of the wafer 20, so as to ensure that the wafer 20 can be smoothly taken out from the opening 115. The opening 115 is connected with an upper cover plate 114 in a sealing way, and the upper cover plate 114 can be clamped and connected with the opening 115 in a sealing way, or can be connected with the opening 115 in a threaded sealing way, and the like. The upper cover 114 is made of a transparent material, and the light source 151 is mounted on the upper cover 114. The specific mounting position of the light emitting source 151 on the upper cover plate 114 is not limited, so long as the light emitting angle requirement of the light emitting source 151 is satisfied. The transparent material may be quartz, transparent ceramic, transparent plastic, or the like, and preferably, in this embodiment, the upper cover 114 is made of quartz with good light transmittance. In this embodiment, since the upper cover 114 is made of light-transmitting material, the installation position of the light-emitting source 151 on the upper cover 114 can be selected in a wider range, so that the light-emitting source can more conveniently correspond to the installation position of the receiver 152 installed on the insulating ring 122, and the problem that the installation position of the receiver 152 on the insulating ring 122 is limited can be better solved.
Referring to fig. 1 and 2, in an example of the dry etching apparatus 10 of the present invention, a protecting cover 160 is disposed at an outer side of the vacuum chamber 11, and a receiving chamber 170 for receiving a cooling medium is formed between the protecting cover 160 and an outer wall of the vacuum chamber 11. The cooling medium in the housing chamber 170 may be a cooling liquid, a cooling gas, or the like, so long as the cooling medium can exchange heat with the wall of the vacuum chamber 11, and the temperature inside the vacuum chamber 11 can be adjusted. By providing the cooling medium in the accommodating chamber 170, the temperature in the vacuum chamber 11 can be controlled and maintained, ensuring the normal operation and use of the dry etching apparatus 10. The light emitting source 151 is installed in the accommodating chamber 170, that is, the periphery of the light emitting source 151 is surrounded by the cooling medium. By the arrangement, the temperature of the vacuum cavity 11 is regulated by the cooling medium, and the working temperature of the light emitting source 151 can be regulated, so that the normal operation and use of the light emitting source 151 can be ensured. Specifically, the light emitting source 151 may be mounted to the protective cover 160 or may be mounted to the outer wall of the vacuum chamber 11, as long as the mounting position of the light emitting source 151 in the accommodating chamber 170 can be ensured to be stable and reliable. It should be noted that, the cooling medium in this embodiment not only can cool down the vacuum cavity 11 when the temperature of the vacuum cavity 11 is too high, but also can transfer heat to the vacuum cavity 11 to raise the temperature when the temperature of the vacuum cavity 11 is too low, thereby realizing bidirectional adjustment of the temperature raising and lowering in the vacuum cavity 11 and maintaining the stability of the working temperature in the vacuum cavity 11.
According to the dry etching equipment, by arranging the film thickness tester, on one hand, the real-time monitoring of the polymer attaching thickness on the inner wall of the upper part of the cavity can be realized in the etching process, so that an operator can timely find the abnormal thickness of the polymer in the vacuum cavity, and the interference can be conveniently performed in time, and further the probability of etching material residue on the surface of the wafer caused by polymer falling in the etching process can be reduced, and the product yield of the wafer can be improved. On the other hand, in the vacuum cavity cleaning process, the residual thickness of the polymer on the inner wall of the vacuum cavity can be monitored in real time through the film thickness tester to judge whether the vacuum cavity is cleaned, so that the cleaning effect of the vacuum cavity can be ensured, the waste of production time caused by excessive cleaning can be avoided, and the normal use time of the interference etching equipment can be correspondingly improved, so that the etching production efficiency of wafers is ensured. Therefore, the invention effectively overcomes some practical problems in the prior art, thereby having high utilization value and use significance. The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
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| KR20050058082A (en) * | 2003-12-11 | 2005-06-16 | 동부전자 주식회사 | Polymer measuring system in etching equipment and method thereof |
| JP4520846B2 (en) * | 2004-12-28 | 2010-08-11 | 日本分光株式会社 | Near-field film thickness measurement system |
| KR101877862B1 (en) * | 2014-12-19 | 2018-07-12 | 가부시키가이샤 히다치 하이테크놀로지즈 | Plasma processing apparatus and driving method thereof |
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