CN118658815A

CN118658815A - Device for semiconductor processing, physical vapor deposition equipment and method of use

Info

Publication number: CN118658815A
Application number: CN202411143654.XA
Authority: CN
Inventors: 何伟业; 陈冬; 吴红星; 许灿; 陶珩; 李雪子; 刘雯伊
Original assignee: Sino Micro Semiconductor Shanghai Co ltd
Current assignee: Sino Micro Semiconductor Shanghai Co ltd
Priority date: 2024-08-20
Filing date: 2024-08-20
Publication date: 2024-09-17

Abstract

The present invention discloses a device for semiconductor processing, a physical vapor deposition device and a method of use, wherein the device for semiconductor processing comprises: a processing chamber; a base, which is arranged at the inner bottom of the processing chamber and is used to carry a substrate; a plurality of ejectors, which are arranged on the base and can be lifted and lowered in a vertical direction; a heating structure, which comprises: a heating lamp group; a transmission mechanism, which is used to carry the heating lamp group and enable the heating lamp group to heat the substrate to perform heat treatment on the substrate. The present invention can uniformly heat the substrate, so that the substrate is heated uniformly, thereby improving the heating rate and heat treatment efficiency of the substrate while ensuring that the substrate is not deformed.

Description

Device for semiconductor processing, physical vapor deposition equipment and use method

Technical Field

The invention relates to the technical field of semiconductor preparation, in particular to a device for semiconductor processing, physical vapor deposition equipment and a using method thereof.

Background

In the semiconductor manufacturing process, not only the substrate is subjected to process treatments such as deposition and etching, but also the substrate needs to be subjected to heat treatment before, during or after the process treatments.

In the prior art, a heating lamp assembly is generally disposed in a processing chamber for performing a process, so that the process and the heat treatment can be performed in the same processing chamber, thereby improving the manufacturing efficiency of the semiconductor device. The heating lamp assembly in the prior art is generally arranged around the inner side wall of the processing chamber so as to avoid adverse effect of the heating lamp assembly on the process. However, the arrangement mode of the heating lamp set assembly can enable the heating lamp set assembly to be close to the edge area of the substrate and far away from the central area of the substrate, so that the problem that the substrate is heated unevenly can be generated, and even the situation that the substrate deforms and slides when the heating speed is too high, the heating speed cannot be very high, and the heat treatment efficiency of the substrate and the preparation efficiency of the semiconductor device are affected. In addition, the film deposited on the heating lamp assembly during the deposition process in the processing chamber also affects the heating uniformity of the heating lamp assembly, causes the problems of local heating of the lamp tube, overhigh temperature and the like, and affects the wafer production yield. Therefore, it is necessary to adjust the heating structure for the heat treatment.

Disclosure of Invention

The invention aims to provide a device for semiconductor processing, physical vapor deposition equipment and a using method thereof, which can uniformly heat a substrate, so that the substrate is uniformly heated, and the heating rate and the heat treatment efficiency of the substrate are improved while the substrate is ensured not to deform.

In order to achieve the above purpose, the present invention is realized by the following technical scheme:

An apparatus for semiconductor processing, comprising:

a processing chamber;

the base is arranged at the bottom of the inside of the processing cavity and is used for bearing a substrate;

The plurality of ejector pins are arranged on the base and can be lifted along the vertical direction;

A heating structure, comprising: a heating lamp set; and the transmission mechanism is used for bearing the heating lamp group and enabling the heating lamp group to heat the substrate so as to perform heat treatment on the substrate.

Optionally, the driving mechanism places the heating lamp set under the substrate.

Optionally, the driving mechanism places the heating lamp set above the substrate.

Optionally, a plurality of thimble along the circumference interval setting of base, and adjacent two be equipped with between the thimble make the space that the heating lamp group passed.

Optionally, the heating lamp component is a first half-ring lamp group and a second half-ring lamp group;

The tail end of the transmission mechanism comprises a first half ring used for bearing the first half ring lamp set and a second half ring used for bearing the second half ring lamp set;

the first semi-ring and the second semi-ring are connected in a rotating mode through the connecting piece, so that the first semi-ring and the second semi-ring are opened and closed around the connecting piece, and the first semi-ring lamp set and the second semi-ring lamp set are arranged on the periphery of the ejector pins.

Optionally, the heating lamp set includes a first reflecting surface and a plurality of lamp bodies disposed on the first reflecting surface; and the first reflective surface is oriented toward the substrate.

Optionally, each lamp body is a point light source, a linear light source, an arc light source or an annular light source.

Optionally, a plurality of the lamp bodies are distributed in an array.

Optionally, the upper surface of the base is formed with a second reflecting surface.

Optionally, the heating lamp set is stored in a storage bin when the substrate is processed.

Optionally, the storage is disposed outside the processing chamber and is in communication with the processing chamber; the transmission mechanism is arranged in the processing cavity or the storage warehouse.

Optionally, the processing cavity is communicated with a transmission cavity, and a first mechanical arm for taking the substrate to the processing cavity is arranged in the transmission cavity; the storage warehouse is arranged outside the transmission cavity and communicated with the transmission cavity or arranged inside the transmission cavity, and the transmission mechanism is the first mechanical arm.

Optionally, the processing chamber is communicated with a front end chamber through a transmission chamber, a first mechanical arm for taking the substrate to the processing chamber is arranged in the transmission chamber, and a second mechanical arm for taking the substrate to the transmission chamber is arranged in the front end chamber; the storage warehouse is arranged outside the front-end chamber and is communicated with the front-end chamber, and the transmission mechanism comprises the first mechanical arm and the second mechanical arm.

Optionally, the heating lamp set is a power storage type lamp.

Optionally, the heating lamp group is a wireless charging type lamp; and an energy receiver is arranged in the heating lamp group, and an energy transmitter for charging the energy receiver is arranged in the storage warehouse or on the transmission mechanism.

Optionally, the heating lamp group is a wiring lamp; and a power supply is arranged in the storage warehouse or outside the processing cavity, and the power supply is electrically connected with the heating lamp set through a cable so as to supply power to the heating lamp set.

In another aspect, the present invention also provides a physical vapor deposition apparatus, including:

an apparatus for semiconductor processing as described above, the susceptor being movable between a heat treatment position, a process treatment position, and a transfer position; and

And the target material is arranged at the top of the inside of the processing cavity and is used for providing a deposition raw material to deposit and form a film on the substrate.

Optionally, the physical vapor deposition apparatus further includes:

a shielding ring fixed on the base and arranged along the circumferential direction of the base;

a cover ring positioned above the shadow ring and surrounding a sidewall of the processing chamber; and the base rises when the substrate is subjected to deposition treatment, and the shielding ring is abutted with the cover ring.

Optionally, a reflective layer is provided on the lower surface of the cover ring and/or the upper surface of the shielding ring.

In yet another aspect, the present invention further provides a method for using the physical vapor deposition apparatus as described above, including:

Step S1, processing: exciting the target material to deposit a thin film on the substrate;

Step S2, heat treatment: and the heating lamp group is arranged above or below the substrate through the transmission mechanism so as to carry out heat treatment on the substrate.

Optionally, when the step S1 is performed, the heating lamp set is stored in a storage library.

Optionally, the storage is arranged outside the processing cavity and is communicated with the processing cavity, and the transmission mechanism is arranged in the processing cavity or the storage; the step S2 includes:

the transmission mechanism takes out the heating lamp set from the storage warehouse and places the heating lamp set above or below the substrate so as to perform heat treatment on the substrate.

Optionally, the processing cavity is communicated with a transmission cavity, the storage is arranged outside the transmission cavity and communicated with the transmission cavity or arranged inside the transmission cavity, and the transmission mechanism is a first mechanical arm arranged in the transmission cavity; the step S2 includes:

The first mechanical arm takes out the heating lamp group from the storage warehouse and passes through the wafer transfer port on the side wall of the processing cavity to place the heating lamp group above or below the substrate so as to perform heat treatment on the substrate.

Optionally, the processing cavity is communicated with a front end cavity through a transmission cavity, the storage warehouse is arranged outside the front end cavity and is communicated with the front end cavity, and the transmission mechanism comprises a first mechanical arm arranged in the transmission cavity and a second mechanical arm arranged in the front end cavity; the step S2 includes:

the second mechanical arm takes out the heating lamp group from the storage warehouse and transmits the heating lamp group to the first mechanical arm;

the first mechanical arm passes through a wafer transfer port on the side wall of the processing cavity to place the heating lamp set above or below the substrate so as to perform heat treatment on the substrate.

The invention has at least one of the following advantages:

The device for semiconductor processing, the physical vapor deposition equipment and the using method provided by the invention can be used for carrying out process treatment on the substrate in the processing cavity and also can be used for carrying out heat treatment on the substrate. When the substrate is subjected to heat treatment, the heating lamp group can be arranged above or below the substrate through the transmission mechanism, so that the problem that the heating lamp group is close to the edge area of the substrate and far from the central area of the substrate in the prior art is avoided, the substrate can be uniformly heated by the heating lamp group, the substrate is uniformly heated, and the heating rate and the heat treatment efficiency of the substrate are improved while the substrate is not deformed.

The heating lamp group comprises a first reflecting surface and a plurality of lamp bodies arranged on the first reflecting surface; the first reflecting surface faces the substrate so as to reflect heat generated by the lamp body to the substrate, thereby improving the heat utilization rate and further improving the heat treatment efficiency.

The second reflecting surface is formed on the upper surface of the base so as to reflect the heat radiated to the base to the substrate, thereby further improving the heat utilization rate and the heat treatment efficiency.

When the substrate is processed, the heating lamp set is stored in a storage warehouse, so that the influence of the heating lamp set on the processing result is avoided.

The invention improves the substrate heating mode and realizes the remarkable reduction of energy consumption. The reduction not only helps enterprises to reduce the operation cost, but also reduces carbon emission and other pollutant emissions possibly generated in the energy production process, and has positive significance for environmental protection.

Drawings

FIG. 1 is a schematic view of a structure of a heating lamp set under a substrate in an apparatus for semiconductor processing according to an embodiment of the present invention;

FIG. 2 is a top view of a heating lamp set positioned below a substrate in an apparatus for semiconductor processing according to one embodiment of the present invention;

FIG. 3 is a schematic view of an apparatus for semiconductor processing according to another embodiment of the present invention, wherein the first half and the second half are separated;

FIG. 4 is a top view of a first half ring lamp set and a second half ring lamp set positioned on the outer periphery of a thimble in an apparatus for semiconductor processing according to another embodiment of the present invention;

FIG. 5 is a top view of a heating lamp set positioned below a substrate in an apparatus for semiconductor processing according to another embodiment of the present invention;

FIG. 6 is a schematic view of a heating lamp set in a storage in an apparatus for semiconductor processing according to an embodiment of the present invention;

FIG. 7 is a top view of a heating lamp set in a storage in an apparatus for semiconductor processing according to one embodiment of the present invention;

FIG. 8 is a schematic diagram of a location profile of a storage library in an apparatus for semiconductor processing according to one embodiment of the present invention;

FIG. 9 is a flow chart of a method of using a PVD apparatus according to an embodiment of the invention.

Detailed Description

The apparatus for semiconductor processing, the physical vapor deposition device and the method of use according to the present invention are described in further detail below with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.

It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

Referring to fig. 1 to 8, this embodiment provides an apparatus for semiconductor processing, including: a process chamber 110, a susceptor 120, a plurality of pins 130, and a heating structure 140; a wafer transfer port 111 for transferring the substrate 100 is formed on the sidewall of the processing chamber 110; the susceptor 120 is disposed at the bottom of the processing chamber 110, and is used for carrying the substrate 100; the plurality of thimble 130 is disposed on the base 120, and the plurality of thimble 130 may be lifted along a vertical direction. The heating structure 140 includes: a heating lamp group 141 and a driving mechanism 142; the driving mechanism 142 is used for carrying the heating lamp set 141 and enabling the heating lamp set 141 to heat the substrate 100 so as to perform heat treatment on the substrate 100.

In particular, the process chamber 110 may be a pre-clean (Preclean) chamber, a Degas (Degas) chamber, a chemical vapor deposition (Chemical Vapor Deposition, CVD) chamber, a physical vapor deposition (Physical Vapor Deposition, PVD) chamber, or an atomic layer deposition (Atomic layer deposition, ALD) chamber, or the like. Within the process chamber 110, the substrate 100 may be subjected to either a process (e.g., deposition, cleaning, or degasification, etc.) or a heat treatment of the substrate 100. More specifically, when the substrate 100 is heat treated, at least a portion of the heating light generated by the heating lamp set 141 is directly irradiated onto the substrate 100, so as to avoid excessive heat loss, thereby improving the heat treatment efficiency, and avoiding the problem that the heating lamp set in the prior art is closer to the edge area of the substrate and farther from the central area of the substrate, so that the heating lamp set 141 in the embodiment can uniformly heat the substrate 100, thereby uniformly heating the substrate 100, and further improving the heating rate and the heat treatment efficiency of the substrate 100 while ensuring that the substrate 100 is not deformed.

Alternatively, when the substrate 100 is heat-treated, the heating lamp set 141 is disposed under the substrate 100 with the heating lamp set 141 between the substrate 100 and the susceptor 120, so that the heating lamp set 141 heats the rear surface of the substrate 100, thereby achieving heating of the entire substrate 100 based on heat conduction; this not only can heat the substrate 100 uniformly, but also can avoid contamination or damage to the front surface of the substrate 100 during heating. Preferably, the heating lamp set 141 is disposed directly under the substrate 100 when the substrate 100 is heat treated, but the invention is not limited thereto.

Specifically, the apparatus for semiconductor processing further comprises a thimble driving mechanism (not shown) for controlling the plurality of thimbles 130 to lift in the vertical direction; and the ejector pins 130 are lifted up to eject the substrate 100, so that the substrate 100 is separated from the base 120; the pins 130 are lowered to lower the substrate 100 such that the substrate 100 contacts the susceptor 120.

In one embodiment, as shown in fig. 1 and 2, a plurality of pins 130 are disposed at intervals along the circumferential direction of the base 120, and a space for passing the heating lamp set 141 is provided between two adjacent pins 130, so that the heating lamp set 141 is disposed below the substrate 100 through the space between two adjacent pins 130. More specifically, when the driving mechanism 142 is used to place the heating lamp set 141 under the substrate 100, the plurality of pins 130 need to be controlled to lift up by the pin driving mechanism to lift up the substrate 100, so that the substrate 100 is separated from the base 120, and the height of the substrate 100 is raised, so that the driving mechanism 142 is convenient for placing the heating lamp set 141 under the substrate 100; the drive mechanism 142 is then passed through the space between adjacent ones of the pins 130 to position the heating lamp assembly 141 under the substrate 100 to heat the substrate 100.

In another embodiment, as shown in fig. 3, 4 and 5, the heating lamp set 141 may be divided into a first half-ring lamp set 1411 (shown in fig. 4) and a second half-ring lamp set 1412 (shown in fig. 4). The end of the drive mechanism 142 (i.e., the end carrying the heating light assembly 141) includes a first half ring 1421 (shown in fig. 3) for carrying the first half ring light assembly 1411 and a second half ring 1422 (shown in fig. 3) for carrying the second half ring light assembly 1412; the first half ring 1421 and the second half ring 1422 are rotatably connected by a connecting member 1423, so that the first half ring 1421 and the second half ring 1422 are opened and closed around the connecting member 1423, thereby placing the first half ring lamp set 1411 and the second half ring lamp set 1412 on the periphery of the plurality of pins 130 (as shown in fig. 4) that jack up the substrate 100, and further placing the heating lamp set 141 under the substrate 100 (as shown in fig. 5). Optionally, the first half 1421 and the second half 1422 are hinged. More specifically, when the transmission mechanism 142 is used to place the first half-ring lamp set 1411 and the second half-ring lamp set 1412 under the substrate 100, the plurality of pins 130 need to be controlled to lift by the pin driving mechanism to lift the substrate 100, so that the substrate 100 is separated from the base 120; subsequently, the first half ring 1421 carrying the first half ring lamp set 1411 and the second half ring 1422 carrying the second half ring lamp set 1412 on the transmission mechanism 142 are separated (as shown in fig. 3) and moved to the outer peripheries of the plurality of the ejector pins 130; the first half ring 1421 and the second half ring 1422 are then closed to surround the outer peripheries of the plurality of pins 130, so that the first half ring lamp set 1411 and the second half ring lamp set 1412 are disposed on the outer peripheries of the plurality of pins 130 (as shown in fig. 4) that lift up the substrate 100, thereby heating the substrate 100.

In yet another embodiment, the set of heating lamps 141 may be positioned above the substrate 100 by the actuator 142. In this case, the ejector pins 130 are controlled to descend by the ejector pin driving mechanism to drop the substrate 100, so that the substrate 100 contacts the base 120 to lower the height of the substrate 100, thereby facilitating the driving mechanism 142 to place the heating lamp set 141 above the substrate 100; the actuator 142 is then moved over the substrate 100 to place the set of heating lamps 141 over the substrate 100 to heat the substrate 100.

With continued reference to fig. 1, the heating lamp set 141 includes a plurality of lamp bodies (not shown). The heating lamp set 141 may further include a first reflecting surface (not shown); the plurality of lamp bodies are disposed on the first reflecting surface, and the first reflecting surface faces the substrate 100.

Specifically, the lamp body serves as a heat source that can generate heat to heat the substrate 100. The first reflecting surface may reflect the heat generated by the lamp body to the substrate 100, thereby improving heat utilization rate and heat treatment efficiency. Optionally, each of the lamp bodies is a point light source, a linear light source, an arc light source or an annular light source according to specific use requirements. Optionally, the lamp body is a halogen lamp, but the invention is not limited thereto.

Specifically, the plurality of lamp bodies are uniformly distributed on the first reflecting surface, so that the heat generated by the heating lamp set 141 is uniformly distributed, and thus the substrate 100 can be uniformly heated, and the heating uniformity of the substrate 100 is ensured. Optionally, the plurality of lamp bodies are distributed in an array, so that as many as possible of the lamp bodies are disposed on the first reflecting surface, so that the heat generated by the heating lamp set 141 is increased as much as possible while the substrate is uniformly heated, and further, the heat treatment efficiency is improved.

In one embodiment, a second reflecting surface (not shown) is formed on the upper surface of the base 120, and the heat radiated to the base 120 can be reflected to the substrate 100 through the second reflecting surface, thereby further improving heat utilization and heat treatment efficiency. The second reflective surface may also avoid heating of the base 120 itself.

Referring to fig. 6, 7 and 8, when the substrate 100 is processed, the heating lamp set 141 is stored in a storage (150A shown in fig. 6 and 7, 150B shown in fig. 8 and 150C) to avoid the influence of the heating lamp set 141 on the processing result.

In one embodiment, as shown in fig. 6-8, the repository 150A may be disposed outside of the process chamber 110 and in communication with the process chamber 110; the storage 150A and the processing chamber 110 may be directly connected (as shown in fig. 6), or may be connected by a slice door (slot door), which is not limited herein. In this case, the driving mechanism 142 may be disposed in the storage 150A or may be disposed directly in the processing chamber 110, as long as the heating lamp set 141 can be disposed above or below the substrate 100. When the heat treatment is performed, the driving mechanism 142 may lift the heating lamp set 141 to perform the heat treatment, and the driving mechanism 142 may further perform the heat treatment after placing the heating lamp set 141 on the base 120. Optionally, the transmission mechanism 142 is a mechanical arm; the storage 150A may be integrally provided with the processing chamber 110 or may be separately provided. Optionally, the heating lamp set 141 is a wired lamp; the apparatus for semiconductor processing further comprises: a power supply (not shown) disposed within the storage 150A or outside the processing chamber 110; the power supply is electrically connected to the heating lamp set 141 through a cable, and is used for supplying power to the heating lamp set 141 so that the heating lamp set 141 generates heat. Preferably, the heating lamp set 141 is a power storage type lamp or a wireless charging type lamp, so as to facilitate the movement of the heating lamp set 141; further, when the heating lamp set 141 is a power-storage type lamp, the battery needs to be sealed in a low-heat-transfer and low-absorptivity housing in order to ensure the normal operation of the battery in a high-temperature environment. Further, when the heating lamp set 141 is a wireless charging type lamp, an energy receiver (not shown in the figure) is disposed in the heating lamp set 141, and an energy emitter (not shown in the figure) for charging the energy receiver is disposed in the storage 150A or at the end of the transmission mechanism 142, but the invention is not limited thereto.

In another embodiment, as shown in fig. 8, the processing chamber 110 is in communication with a Transfer Module (TM) 310, and first robot arms 311,312 for transferring the substrate 100 to the processing chamber 110 are disposed in the Transfer chamber 310. The repository 150B may be disposed outside the transfer chamber 310 and in communication with the transfer chamber 310; the storage 150B and the transfer chamber 310 may be directly connected, or may be connected by a slice gate (slot door). In other embodiments, the repository 150B may be disposed directly inside the transfer chamber 310, so long as the first robot 311,312 is not affected to take the substrate 100 to the processing chamber 110. If the number of the transfer chambers 310 is plural, and two adjacent transfer chambers 310 are connected by the transition chamber 330, the storage 150B may be disposed inside the transition chamber 330. In this case, the driving mechanism 142 may be the first robot 311,312, that is, the heating lamp set 141 is transferred between the process chamber 110 and the storage 150B by the first robot 311,312 and the heating lamp set 141 is disposed above or below the substrate 100. When the heat treatment is performed, the driving mechanism 142 places the heating lamp set 141 on the base 120, and withdraws the treatment chamber 110 to perform the heat treatment. In addition, the first robot arms 311,312 may also perform the transfer of the heating lamp set 141 in the transition chamber 330. Optionally, the heating lamp set 141 is a power storage lamp or a wireless charging lamp, so as to facilitate the transmission of the heating lamp set 141; further, when the heating lamp set 141 is a power-storage type lamp, the battery needs to be sealed in a low-heat-transfer and low-absorptivity housing in order to ensure the normal operation of the battery in a high-temperature environment. Further, when the heating lamp set 141 is a wireless charging type lamp, an energy receiver is disposed in the heating lamp set 141, and an energy emitter for charging the energy receiver is disposed in the storage 150B or at the end of the first mechanical arm 311,312, but the invention is not limited thereto.

In yet another embodiment, as shown in FIG. 8, the process chamber 110 communicates with a front end chamber (Equipment Front End Module, EFEM) 320 via a transfer chamber 310, i.e., the process chamber 110 communicates with the transfer chamber 310, the transfer chamber 310 communicates with the front end chamber 320; the front end chamber 320 is provided with a second robot arm (not shown) for transferring the substrate 100 to the transfer chamber 310, and the transfer chamber 310 is provided with first robot arms 311,312 for transferring the substrate 100 to the processing chamber 110. The storage 150C is disposed outside the front end chamber 320 and communicates with the front end chamber 320; the storage 150C and the front end chamber 320 may be directly connected, or may be connected by a slice door (slot door). In this case, the driving mechanism 142 includes the second and first robot arms 311,312, that is, the heating lamp set 141 is transferred between the front end chamber 320 and the storage 150C by the second robot arm, and then the heating lamp set 141 is placed above or below the substrate 100 by the first robot arms 311,312. Further, the transfer chamber 310 and the front end chamber 320 are typically connected by a Load Lock (loadlock) chamber 340, where the set of heating lamps 141 may be first transferred between the repository 150C and the Load Lock chamber 340 by the second robot and then transferred between the Load Lock chamber 340 and the corresponding process chamber 110 by the first robot 311,312, thereby placing the set of heating lamps 141 above or below the substrate 100. When the heat treatment is performed, the driving mechanism 142 places the heating lamp set 141 on the base 120, and withdraws the treatment chamber 110 to perform the heat treatment. Optionally, the heating lamp set 141 is a power storage lamp or a wireless charging lamp, so as to facilitate the transmission of the heating lamp set 141; when the heating lamp set 141 is a power storage type lamp, the battery needs to be sealed in a low heat transfer and low absorption rate housing in order to ensure the normal operation of the battery in a high temperature environment. When the heating lamp set 141 is a wireless charging type lamp, an energy receiver is disposed in the heating lamp set 141, and an energy emitter for charging the energy receiver is disposed in the storage 150C, at the end of the second mechanical arm or at the end of the first mechanical arm 311,312, but the invention is not limited thereto.

On the other hand, referring to fig. 1 to 8, this embodiment further provides a physical vapor deposition apparatus, including: an apparatus for semiconductor processing as described above; and a target 210 disposed at the top of the inside of the processing chamber 110 for supplying deposition raw materials to deposit a thin film on the substrate 100.

It is understood that the physical vapor deposition apparatus further includes: a shielding ring 220 fixed to the base 120 and disposed along a circumferential direction of the base 120; a cover ring 230 disposed around a sidewall of the processing chamber 110 above the shadow ring 220; and the susceptor 120 is raised during the deposition process of the substrate 100, the shadow ring 220 is abutted against the cover ring 230. Optionally, the cover ring 230 is located above the sheet transfer port 111.

Specifically, the base 120 may be lifted and lowered in a vertical direction between a heat treatment position, a process treatment position, and a transfer position; wherein the transfer position is located below the transfer port 111, the operation of transferring the substrate 100 to the process chamber 110 or taking out the substrate 100 from the process chamber 110 may be performed when the susceptor 120 is located at the transfer position.

When the processing position is above the wafer transfer port 111 and the susceptor 120 is located at the processing position, the substrate 100 may be subjected to deposition processing; further, when the susceptor 120 is located at the processing position, the shadow ring 220 is driven by the susceptor 120 to abut against the cover ring 230, so as to avoid the formation of deposits in non-processing areas (e.g., the back surface of the substrate 100, etc.).

When the susceptor 120 is positioned at the heat treatment position, the substrate 100 may be heat-treated by the heating lamp set 141; the heat treatment position may be located above the sheet transfer port 111 or below the sheet transfer port 111, and is not limited thereto, as long as the transmission mechanism 142 may place the heating lamp set 141 above or below the substrate 100 by the cooperation of the base 120 and the ejector pin 130. For example, the transmission mechanism 142 is the first mechanical arms 311, 312, and when the heating lamp set 141 is disposed above the substrate 100 by the first mechanical arms 311, 312, the heat treatment position may be located below the sheet transfer port 111. For another example, the driving mechanism 142 is disposed in the processing chamber 110, and the heat treatment position may be located above the wafer transfer port 111 when the heating lamp set 141 is disposed above or below the substrate 100 by the driving mechanism 142.

In addition, if the cover ring 230 is fixed on the sidewall of the processing chamber 110 and is not movable, the shielding ring 220 is separated from the cover ring 230 under the driving of the base 120 when the base 120 is at the heat treatment position, so that the driving mechanism 142 passes through the space between the shielding ring 220 and the cover ring 230 to place the heating lamp set 141 above or below the substrate 100. If the cover ring 230 is fixed on the sidewall of the processing chamber 110 and can move in the vertical direction, when the base 120 is located at the heat treatment position, the shielding ring 220 and the cover ring 230 are driven by the base 120 to move upwards, so long as the driving mechanism 142 can place the heating lamp set 141 above or below the substrate 100.

Specifically, the lower surface of the cover ring 230 and/or the upper surface of the shielding ring 220 is provided with a reflective layer (not shown in the figure); when the substrate 100 is heat-treated, the heat radiated to the cover ring 230 and/or the shadow ring 220 can be reflected to the substrate 100 by the reflective layer, thereby further improving heat utilization and heat treatment efficiency.

In yet another aspect, referring to fig. 9, the present embodiment further provides a method for using the physical vapor deposition apparatus as described above, including: step S1, executing process treatment: exciting the target 210 to deposit a thin film on the substrate 100; step S2, performing heat treatment: the heating lamp set 141 is disposed above or below the substrate 100 through the driving mechanism 142 to perform a heat treatment on the substrate 100.

Specifically, when the step S1 is performed, the heating lamp set 141 is stored in the storage (150A shown in fig. 6 and 7, 150B and 150C shown in fig. 8) to avoid the heating lamp set 141 from affecting the deposition process. The process temperature of the process treatment may be room temperature.

In some embodiments, the step S1 and the step S2 may be alternately performed to achieve an optimal heat treatment effect.

Specifically, the temperature of the heat treatment in the step S2 may be 200-300 ℃, but the invention is not limited thereto.

In one embodiment, as shown in fig. 6 and 7, the storage 150A is disposed outside the processing chamber 110 and is in communication with the processing chamber 110, and the transmission mechanism 142 is disposed in the processing chamber 110 or in the storage 150A; the step S2 includes: the driving mechanism 142 takes out the heating lamp set 141 from the storage 150A and places the heating lamp set 141 above or below the substrate 100 to heat-treat the substrate 100. In addition, after the heat treatment of the substrate 100 is completed, the driving mechanism 142 withdraws the heating lamp set 141 from above or below the substrate 100 and stores it in the storage 150A.

In another embodiment, as shown in fig. 8, the processing chamber 110 is in communication with a transfer chamber 310, the repository 150B is disposed outside the transfer chamber 310 and in communication with the transfer chamber 310 or disposed inside the transfer chamber 310, and the transmission mechanism 142 is a first mechanical arm 311,312 disposed in the transfer chamber 310; the step S2 includes: the first robot arms 311,312 remove the set of heating lamps 141 from the storage 150B and place the set of heating lamps 141 above or below the substrate 100 through the transfer port 111 in the sidewall of the processing chamber 110 to heat treat the substrate 100. In addition, after the heat treatment of the substrate 100 is completed, the first robot arms 311,312 retract the heating lamp set 141 from above or below the substrate 100 through the transfer port 111 and store it in the storage 150B.

In yet another embodiment, as shown in fig. 8, the processing chamber 110 is in communication with a front end chamber 320 through a transfer chamber 310, the repository 150C is disposed outside the front end chamber 320 and in communication with the front end chamber 320, and the transmission mechanism 142 includes first robot arms 311,312 disposed within the transfer chamber 310 and second robot arms disposed within the front end chamber 320; the step S2 includes: the second robot takes out the heating lamp set 141 from the storage 150C and performs handover with the first robot 311, 312; the first robot arms 311,312 pass through the wafer transfer port 111 on the sidewall of the processing chamber 110 to place the set of heating lamps 141 above or below the substrate 100 to heat treat the substrate 100. In addition, after the heat treatment of the substrate 100 is completed, the first robot arms 311,312 retract the heating lamp set 141 from above or below the substrate 100 through the transfer port 111 and transfer it to the second robot arm; the second robot arm stores the heating lamp set 141 in the storage 150C.

Specifically, in the step S2, if the heating lamp set 141 is disposed above the substrate 100 by the driving mechanism 142, the step S2 is further performed by: the susceptor 120 is lowered below the transfer port 111 so that the heating lamp set 141 can be placed above the substrate 100 through the transfer port 111.

Specifically, in the step S2, if the heating lamp set 141 is disposed below the substrate 100 by the driving mechanism 142, the step S2 is further performed by: the ejector pins 130 are lifted up to eject the substrate 100 so that the substrate 100 is separated from the susceptor 120. In other embodiments, the method further comprises lowering the base 120 below the transfer port 111 to enable the heat lamp assembly 141 to be positioned below the substrate 100 through the transfer port 111.

More specifically, in one embodiment, the actuator 142 may pass through the space between two adjacent pins 130 to place the heat lamp assembly 141 under the substrate 100.

In another embodiment, the heating lamp set 141 may be divided into the first half-ring lamp set 1411 and the second half-ring lamp set 1421. The first half ring 1421 carrying the first half ring light set 1411 and the second half ring 1422 carrying the second half ring light set 1421 on the transmission mechanism 142 are separated and moved to the outer peripheries of the plurality of the ejector pins 130; the first half ring 1421 and the second half ring 1422 are then closed to surround the outer periphery of the plurality of pins 130, thereby positioning the first half ring light set 1411 and the second half ring light set 1421 under the substrate 100. Further, in this case, the first half-ring light set 1411 and the second half-ring light set 1421 may be stored in the same storage, or may be stored in different storage; and the transmission mechanism 142 takes out the first half ring light set 1411 and the second half ring light set 1421 from the storage or puts them into the storage, the first half ring 1421 and the second half ring 1422 are in the closed state.

In summary, the present embodiments provide an apparatus for semiconductor processing, a physical vapor deposition device, and a method of using the same, in which a substrate may be processed in a processing chamber, or may be heat-treated. When the substrate is subjected to heat treatment, the heating lamp group can be arranged above or below the substrate through the transmission mechanism, so that the problem that the heating lamp group is close to the edge area of the substrate and far away from the central area of the substrate in the prior art is avoided, the substrate can be uniformly heated by the heating lamp group in the embodiment, the substrate is uniformly heated, and the heating rate and the heat treatment efficiency of the substrate are improved while the substrate is not deformed. The heating lamp group in the embodiment comprises a first reflecting surface and a plurality of lamp bodies arranged on the first reflecting surface; the first reflecting surface faces the substrate so as to reflect heat generated by the lamp body to the substrate, thereby improving the heat utilization rate and further improving the heat treatment efficiency. The upper surface of the base is provided with a second reflecting surface so as to reflect the heat radiated to the base to the substrate, thereby further improving the heat utilization rate and the heat treatment efficiency. In addition, when the substrate is processed in the embodiment, the heating lamp set is stored in a storage warehouse, so that the influence of the heating lamp set on the processing result is avoided.

While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims

1. An apparatus for semiconductor processing, comprising:

a processing chamber;

2. The apparatus for semiconductor processing as recited in claim 1, wherein said actuator mechanism positions said set of heating lamps under said substrate.

3. The apparatus for semiconductor processing as recited in claim 1, wherein said actuator mechanism positions said set of heating lamps over said substrate.

4. The apparatus for semiconductor processing as recited in claim 2, wherein a plurality of said pins are arranged at intervals along a circumferential direction of said susceptor, and a space for passing said heating lamp group is provided between two adjacent pins.

5. The apparatus for semiconductor processing as claimed in claim 2, wherein,

The heating lamp component comprises a first semi-ring lamp group and a second semi-ring lamp group;

6. The apparatus for semiconductor processing of claim 1, wherein the heating lamp set comprises a first reflective surface and a plurality of lamp bodies disposed on the first reflective surface; and the first reflective surface is oriented toward the substrate.

7. The apparatus for semiconductor processing according to claim 6, wherein each of the lamp bodies is a point light source, a line light source, an arc light source, or a ring light source.

8. The apparatus for semiconductor processing as recited in claim 7, wherein a plurality of the lamp bodies are distributed in an array.

9. The apparatus for semiconductor processing according to claim 1, wherein an upper surface of the susceptor is formed with a second reflecting surface.

10. The apparatus for semiconductor processing as recited in claim 1, wherein said set of heating lamps is stored in a storage bin during processing of said substrate.

11. The apparatus for semiconductor processing of claim 10, wherein the repository is disposed outside of and in communication with the processing chamber; the transmission mechanism is arranged in the processing cavity or the storage warehouse.

12. The apparatus for semiconductor processing of claim 10, wherein the processing chamber is in communication with a transfer chamber, the transfer chamber having a first robot disposed therein for transferring the substrate to the processing chamber; the storage warehouse is arranged outside the transmission cavity and communicated with the transmission cavity or arranged inside the transmission cavity, and the transmission mechanism is the first mechanical arm.

13. The apparatus for semiconductor processing of claim 10, wherein the processing chamber is in communication with a front end chamber through a transfer chamber, wherein a first robot for transferring the substrate to the processing chamber is disposed in the transfer chamber, and wherein a second robot for transferring the substrate to the transfer chamber is disposed in the front end chamber; the storage warehouse is arranged outside the front-end chamber and is communicated with the front-end chamber, and the transmission mechanism comprises the first mechanical arm and the second mechanical arm.

14. The apparatus of any one of claims 10-13, wherein the set of heating lamps is a power-storage lamp.

15. The apparatus for semiconductor processing according to any one of claims 10 to 13, wherein the heating lamp set is a wireless charging type lamp; and an energy receiver is arranged in the heating lamp group, and an energy transmitter for charging the energy receiver is arranged in the storage warehouse or on the transmission mechanism.

16. The apparatus for semiconductor processing of claim 11, wherein the set of heating lamps is a wired lamp; and a power supply is arranged in the storage warehouse or outside the processing cavity, and the power supply is electrically connected with the heating lamp set through a cable so as to supply power to the heating lamp set.

17. A physical vapor deposition apparatus, comprising:

The apparatus for semiconductor processing of any one of claims 1-16, wherein the susceptor moves between a heat treatment position, a process treatment position, and a transfer position; and

18. The physical vapor deposition apparatus of claim 17, further comprising:

19. The physical vapor deposition apparatus of claim 18, wherein a lower surface of the cover ring and/or an upper surface of the shadow ring is provided with a reflective layer.

20. The method of using a physical vapor deposition apparatus according to any one of claims 17 to 19, comprising:

21. The method of claim 20, wherein the heating lamp set is stored in a storage bin when the step S1 is performed.

22. The method of claim 21, wherein the repository is disposed outside of and in communication with the process chamber, and the transmission mechanism is disposed within the process chamber or within the repository; the step S2 includes:

23. The method of claim 21, wherein the processing chamber is in communication with a transfer chamber, the repository is disposed outside of the transfer chamber and in communication with the transfer chamber or disposed inside the transfer chamber, and the transmission mechanism is a first mechanical arm disposed within the transfer chamber; the step S2 includes:

24. The method of claim 21, wherein the process chamber is in communication with a front end chamber through a transfer chamber, the repository is disposed outside of and in communication with the front end chamber, and the drive mechanism comprises a first mechanical arm disposed within the transfer chamber and a second mechanical arm disposed within the front end chamber; the step S2 includes: