CN118530626A - Perovskite quantum dot dispersion liquid for inkjet printing and photoetching patterning, preparation method, printing method, photoetching patterning method and application - Google Patents

Abstract

The invention relates to perovskite quantum dot dispersion liquid for inkjet printing and photoetching patterning, a preparation method, a printing method, a photoetching patterning method and application. The dispersion liquid synthesizes perovskite quantum dots in a polymer monomer, a cross-linking agent and a photoinitiator by a one-pot method, and can realize high-dispersibility, high-stability and high-resolution patterning of the perovskite quantum dots in the inkjet printing and photoetching processes. The perovskite quantum dot dispersion liquid has excellent optical performance, chemical stability and printing adaptability, and is widely applied to the fields of Micro-LEDs, QLED displays, solar cells, photoelectric detectors and the like.

Description

Perovskite quantum dot dispersion for inkjet printing and photolithography patterning, preparation method, printing method, photolithography patterning method and application

Technical Field

The present invention relates to the field of nanotechnology, in particular to a perovskite quantum dot dispersion for inkjet printing and photolithography patterning, a preparation method, a printing method, a photolithography patterning method and applications. The dispersion can achieve high-resolution and high-precision patterning without damaging the optical properties of quantum dots, and is widely used in Mini/Micro-LED, LCD backlight modules, photoelectric detection and other fields.

Background Art

In the field of modern display technology, perovskite quantum dots are widely considered to be one of the key materials for the next generation of display technology due to their unique optical properties and wide color gamut coverage. The size controllability and tunable band gap of perovskite quantum dots give them great application potential in fields such as light-emitting diodes (LEDs), solar cells, and photodetectors. Especially in Micro-LED and quantum dot display technology (QLED), perovskite quantum dots can achieve high-efficiency light conversion and high color saturation, thus providing a more delicate and vivid visual experience.

However, there are some technical challenges in applying perovskite quantum dots to actual inkjet printing and photolithography patterning processes. First, the stability problem of perovskite quantum dots is particularly prominent. Due to their unique crystal structure and surface properties, perovskite quantum dots are easily oxidized and hydrolyzed in the air, resulting in a decrease in their luminescence performance. In addition, the dispersibility of quantum dots in solution is also an important consideration. Due to the uneven charge distribution on the surface of quantum dots, quantum dots may agglomerate in the solution, which will affect their uniform deposition and pattern clarity during inkjet printing and photolithography.

In terms of inkjet printing, the viscosity and rheological properties of perovskite quantum dots have a direct impact on the printing quality. Too high a viscosity can cause nozzle clogging, while too low a viscosity can cause unstable ink jetting. In addition, changes in temperature and humidity during inkjet printing may also have an adverse effect on the stability of quantum dots. In the photolithography process, the photocuring properties of perovskite quantum dots are equally critical. In order to achieve precise patterning, quantum dots need to quickly transform from liquid to solid under ultraviolet light. However, perovskite quantum dots themselves do not have the ability to photocure, and this process needs to be achieved by adding photoinitiators and suitable photocurable monomers. This requires precise control of the types and proportions of these additives to ensure that the optical properties of the quantum dots are maintained during the photocuring process while achieving rapid curing.

In addition, the preparation cost of perovskite quantum dots is also a factor that needs to be considered. Although perovskite quantum dots have many advantages, their synthesis process is relatively complicated and requires fine control of reaction conditions, such as temperature, time, precursor concentration, etc. Slight changes in these conditions may have a significant impact on the properties of quantum dots, so a lot of experiments are needed to optimize the preparation process.

In summary, although perovskite quantum dots have great application prospects in the field of display technology, they still face many challenges in inkjet printing and photolithography patterning. In order to overcome these challenges, in-depth research is needed on the stability mechanism of perovskite quantum dots, dispersion optimization, inkjet printing parameter adjustment, and improvement of photocuring technology.

Summary of the invention

The present invention discloses a perovskite quantum dot dispersion for inkjet printing and photolithography patterning, a preparation method, a printing method, a photolithography patterning method and an application. The dispersion achieves high stability and high-resolution patterning of perovskite quantum dots in inkjet printing and photolithography through an optimized formula and preparation process. The perovskite quantum dot dispersion of the present invention has excellent optical properties, chemical stability and printability, and is widely used in Micro-LED, QLED displays, solar cells, photodetectors and other fields. The preparation method of the present invention is simple and efficient, can be mass-produced, and has good commercial prospects and social value.

A perovskite quantum dot dispersion for inkjet printing and photolithography patterning, the dispersion comprising the following key components:

Perovskite quantum dots: As the core component of the ink, its chemical structure is APbX ₃ , where A is at least one of MA ⁺ , FA ⁺ , DMA ⁺ , NH ₄ ⁺ , Na ⁺ , K ⁺ , Rb ⁺ and Cs ⁺ , and X is at least one of F ^- , Cl ^- , Br ^- and I ^- . The high quality and stability of the nanocrystals are ensured by precisely controlling the particle size and surface ligands.

Polymer monomers: acrylic polymer monomers, including but not limited to the following: acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, isooctyl acrylate, lauryl acrylate, benzyl acrylate, cyclohexyl acrylate, perfluoroalkyl acrylate, hydroxyethyl acrylate phosphate, isobornyl acrylate, tetrahydrofuran methyl acrylate, isobornyl methacrylate, as solvents for synthesizing perovskite quantum dots.

Surface ligands: The dispersibility of perovskite quantum dots in acrylic monomer solutions is improved by adding surface ligands such as tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, 3-aminopropyltrimethoxysilane, etc.

Photoinitiator: Select a suitable photoinitiator, such as 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, phenyl benzophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-(4-methylthiophenyl)-2-morpholinyl-1-propanone, triphenylphosphine or benzoyl azobisisobutyronitrile, to achieve photocuring of the perovskite quantum dot dispersion.

Cross-linking agent: The mechanical strength and durability of the perovskite quantum dot dispersion are enhanced by adding a cross-linking agent such as 1,4-butanediol dimethacrylate, ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, trimethylolpropane trimethacrylate, dipentaerythritol tetraacrylate, and dimethacrylate tetramethacrylate.

Furthermore, based on the total mass of the quantum dot dispersion, the mass percentage of the perovskite quantum dots is 1% to 60% (e.g., 1%, 5%, 10%, 20%, 30%, 40%, 50% or 60%); the mass percentage of the polymer monomer is 10% to 70% (e.g., 10%, 15%, 20%, 30%, 40%, 50%, 60% or 70%); the mass percentage of the surface ligand is 1% to 5% (e.g., 1%, 2%, 3%, 4% or 5%); the mass percentage of the photoinitiator is 1% to 10% (e.g., 1%, 2%, 3%, 4%, 5%, 7%, 9% or 10%); and the mass percentage of the crosslinker is 5% to 20% (e.g., 5%, 7%, 9%, 10%, 15%, 17% or 20%).

Furthermore, CsPbX ₃ quantum dots are prepared by the following method, which includes the steps of first dissolving DMAPbBr ₃ in N,N-dimethylformamide, and then reacting with Cs ₂ CO ₃ dissolved in bis(2,4,4-trimethylpentyl)phosphonic acid to synthesize CsPbX ₃ quantum dots, wherein the molar ratio of DMAPbBr ₃ to Cs ₂ CO ₃ is 3:1~1:3 (for example, 3:1, 2:1, 1:1, 1:2 or 1:3), and during the synthesis process, the Cs ₂ CO ₃ solution needs to be heated (for example, heated to 120°C) to ensure sufficient dissolution.

Furthermore, the perovskite quantum dots are _CsPbX3 quantum dots, wherein X is selected from the halogen elements bromine (Br), iodine (I) or chlorine (Cl).

Furthermore, the polymer monomer serves as a quantum dot synthesis solvent and film-forming aid, and it can form a polymer layer that wraps the quantum dots.

Furthermore, surface ligands are used to regulate the surface state of quantum dots, which helps to improve the dispersion stability and long-term stability of perovskite quantum dots.

Furthermore, the photoinitiator has a photosensitive property and can induce a chemical cross-linking reaction under the irradiation of ultraviolet light or other light of appropriate wavelength to achieve curing.

Furthermore, the cross-linking agent enhances the strength and toughness of the internal network structure of the dispersion.

The molar ratio of each component in the dispersion is carefully designed, so that the final perovskite quantum dot dispersion is not only suitable as inkjet printing ink, but also suitable as a photoresist material in the photolithography process.

A method for preparing a perovskite quantum dot dispersion for inkjet printing and photolithography patterning comprises the following steps:

DMAPbX ₃ was dissolved in N,N-dimethylformamide and fully dissolved by ultrasonic treatment. At the same time, Cs ₂ CO ₃ was dissolved in bis(2,4,4-trimethylpentyl)phosphonic acid and heated until dissolved. Isobornyl acrylate, tetramethylacrylate dimethacrylate and oleylamine were pre-mixed in a beaker, and diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and triphenylphosphine photoinitiator were added. Under continuous stirring, DMAPbBr ₃ solution and Cs ₂ CO ₃ solution were added dropwise, and the solution changed color at this time to prepare a perovskite quantum dot dispersion. In order to further improve the dispersibility and luminous efficiency of perovskite quantum dots, tetraoctylammonium bromide, trimethoxysilane, tri(trimethoxysilyl)propyl methacrylate, 3-aminopropyltrimethoxysilane and a mixed solution prepared by mixing deionized water, anhydrous ethanol and ammonia were added to the above system. The mixture is stirred continuously for 2-12 hours (for example, 6 hours) at 25-65°C (for example, 55 ^° C) to finally obtain a high-performance perovskite quantum dot dispersion with photo-crosslinking properties, which is suitable for inkjet printing or photolithography processes and has not only high luminescence efficiency but also excellent stability.

A method for applying a perovskite quantum dot dispersion for inkjet printing and photolithography patterning, comprising the following steps:

a. Inkjet printing: Load the prepared perovskite quantum dot dispersion into the inkjet printing device and perform inkjet printing according to the preset pattern and parameters. The flow rate and speed of the ink should be controlled during the inkjet printing process to obtain a clear pattern.

b. Photolithography patterning: Spin-coat the perovskite quantum dot dispersion on the substrate for photolithography processing, and control the exposure time and light intensity to obtain the desired pattern effect. Post-process the perovskite quantum dot pattern after photolithography, such as drying and curing, to improve the quality and stability of the pattern. The post-processing method and conditions should be determined according to the experimental requirements.

c. Application: Apply the perovskite quantum dot patterns after inkjet printing and photolithography to corresponding fields, such as optoelectronic devices, display technology, biosensors, etc. The application method and conditions should be determined according to actual needs.

The perovskite quantum dot dispersion of the present invention has the remarkable characteristic of being capable of being photocured at room temperature.

Another important feature of the perovskite quantum dot dispersion of the present invention is its excellent dispersion stability and storage stability.

The perovskite quantum dot dispersion of the present invention clearly points out that its applicable fields include but are not limited to inkjet printing and photolithography patterning technology.

The perovskite quantum dot dispersion preparation process of the present invention emphasizes its simplicity, high efficiency, cost-effectiveness, and suitability for large-scale industrial production.

Beneficial effects of the present invention:

The perovskite quantum dot dispersion of the present invention has the following advantages:

1. High stability: By selecting appropriate acrylic monomer solvents, crosslinkers, surface ligands and photoinitiators, the prepared perovskite quantum dot dispersion has excellent colloidal stability, ensuring the stability of perovskite quantum dots during inkjet printing and photolithography. 2. Good dispersibility: By adding surface ligands, the uniform dispersion of perovskite quantum dots in organic solvents is achieved, avoiding aggregation. 3. Fast photocuring speed: By selecting and optimizing photoinitiators, the rapid photocuring of perovskite quantum dot dispersion is achieved, improving production efficiency. 4. High mechanical strength: By adding crosslinkers, the mechanical strength and durability of the cured film of the perovskite quantum dot dispersion are enhanced, extending the service life of the product.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG1 is a fluorescence spectrum of the CsPbBr ₃ quantum dot dispersion in Example 1 of the present invention.

FIG. 2 is a photo of the CsPbBr ₃ quantum dot dispersion in Example 1 of the present invention before and after being placed in air at room temperature for one month.

FIG3 is a microscopic fluorescence photograph of the inkjet-printed CsPbBr ₃ quantum dot microarray in Example 1 of the present invention.

FIG. 4 is a fluorescence spectrum of the inkjet-printed CsPbBr ₃ quantum dot microarray in Example 1 of the present invention.

FIG5 is a microscopic fluorescence photograph of the CsPbBr ₃ quantum dot microarray prepared by photolithography in Example 1 of the present invention.

FIG. 6 is a scanning electron microscope image of the CsPbBr ₃ quantum dot microarray prepared by photolithography in Example 1 of the present invention.

FIG. 7 is a fluorescence spectrum of the CsPbBr ₃ quantum dot dispersion in Example 2 of the present invention.

FIG8 is a before and after photo of the CsPbBr ₃ quantum dot dispersion in Example 2 of the present invention placed in air at room temperature for two days.

FIG. 9 is a fluorescence spectrum of the CsPb(ClBr) ₃ quantum dot dispersion in Example 3 of the present invention.

FIG. 10 is a fluorescence spectrum of the CsPb(BrI) ₃ quantum dot dispersion in Example 4 of the present invention.

Specific implementation plan

The technical scheme of the present invention will be further described in detail below in conjunction with specific embodiments. It should be understood that the following embodiments are only exemplary descriptions and explanations of the present invention, and should not be construed as limiting the scope of protection of the present invention. All technologies implemented based on the above content of the present invention are included in the scope that the present invention is intended to protect.

Unless otherwise specified, the raw materials and reagents used in the following examples are commercially available or can be prepared by known methods.

Example 1: A _CsPbBr3 quantum dot dispersion

The specific preparation method of the CsPbBr ₃ quantum dot dispersion in this embodiment is as follows: First, 8 mmol of DMAPbBr ₃ is dissolved in 5 mL of N,N-dimethylformamide, and it is fully dissolved by ultrasonic treatment to obtain a DMAPbBr ₃ solution. At the same time, 1 mmol of Cs ₂ CO ₃ is dissolved in a 5 mL volume of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and it is heated to 120 ^o C to promote dissolution to obtain a Cs ₂ CO ₃ solution. In addition, 1 mmol of tetraoctylammonium bromide is dissolved in 2.5 mL of toluene to obtain a tetraoctylammonium bromide solution. 2 mL of isobornyl acrylate, 0.5 mL of tetramethylacrylate dimethacrylate and 0.5 mL of oleylamine are pre-mixed in a beaker, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator are added to obtain a mixed solution A. 100 μL of DMAPbBr ₃ solution and 400 μL of Cs ₂ CO ₃ solution were added dropwise to the mixed solution A. At this time, the solution showed a color change, and a CsPbBr ₃ quantum dot dispersion was prepared. In order to further improve the dispersion quality and luminous efficiency of CsPbBr ₃ quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially formulated mixed solution B (the solution B was prepared by mixing 1 mL of deionized water, 5 mL of anhydrous ethanol, and 100 mL of 28 wt% ammonia water) were added to the above system to obtain a mixed solution C. After the mixed solution C was stirred for 6 hours at 55 ^° C, a CsPbBr ₃ high-performance perovskite quantum dot dispersion was finally obtained. As shown in Figure 1, the fluorescence emission peak of the CsPbBr ₃ quantum dot dispersion is located at 511 nm, the half-peak width is only 21 nm, and the luminescence quantum yield is as high as 91%. In addition, the CsPbBr ₃ quantum dot dispersion has excellent dispersibility and no obvious precipitation after being placed in an air atmosphere at room temperature for one month (Figure 2).

When using electrohydrodynamic inkjet printing technology (SIJ-S050) to prepare CsPbBr ₃ quantum dot patterns, the glass substrate needs to be thoroughly cleaned, ultrasonically cleaned with acetone, isopropanol and deionized water for 15 minutes each, and then dried with nitrogen purge. To prevent nozzle clogging, the CsPbBr ₃ quantum dot dispersion was pre-filtered with a 0.22 μm organic filter membrane. A nozzle with a diameter of 3.8 to 4.2 μm was selected for microarray printing. Figure 3 shows a uniform fluorescent CsPbBr ₃ quantum dot microarray covering an area of 1 square centimeter, containing 250×250 dots, each with a diameter of 10 μm and a distance of 30 μm between dots. The texture of each dot is consistent throughout the printing area, which proves the reliability and repeatability of using electrohydrodynamic inkjet printing technology in the preparation of large-area CsPbBr ₃ quantum dot microarrays. As shown in Figure 4, the prepared CsPbBr ₃ quantum dot microarray has an emission wavelength of 512 nm and an extremely narrow half-peak width (18 nm). When preparing perovskite quantum dot patterns by photolithography, the glass substrate is also first deeply cleaned and subjected to plasma treatment (Air, 100 W) for 5 minutes after ultrasonic cleaning. The CsPbBr ₃ quantum dot dispersion uniformly coated on the glass substrate was preheated and baked at 100 ^o C for 60 seconds. The selected area was exposed to ultraviolet light (365 nm, 70 mJ cm ^-2 ) for 3 seconds using a pre-designed photomask, rinsed with ethanol solution for about 20 to 30 seconds, and further rinsed with deionized water to finally obtain a refined CsPbBr ₃ quantum dot pattern with good luminescence properties. As shown in Figure 5, the prepared 40 μm wide stripes and 50 μm grids show high contrast between bright green and dark states, as well as clear and sharp edges. In addition, the scanning electron microscope image shows a smooth surface and a clear interface between the exposed and unexposed areas. Cross-sectional scanning electron microscopy images further confirmed that all exposed lines had been successfully cured, while the unexposed portions had been completely removed. A magnified view of a single stripe showed a pattern thickness of 8.2 μm (Figure 6).

Example 2: A _CsPbBr3 quantum dot dispersion

The specific preparation method of the comparative sample of the CsPbBr ₃ quantum dot dispersion without surface ligand treatment in this embodiment is as follows: First, 8 mmol of DMAPbBr ₃ is dissolved in 5 mL of N,N-dimethylformamide, and it is ensured to be fully dissolved by ultrasonic treatment. At the same time, 1 mmol of Cs ₂ CO ₃ is dissolved in the same volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and it is heated to 120 ^o C to promote dissolution. In addition, 1 mmol of tetraoctylammonium bromide is dissolved in 2.5 mL of toluene. 2 mL of isobornyl acrylate, 0.5 mL of tetramethylacrylate dimethacrylate and 0.5 mL of oleylamine are pre-mixed in a beaker, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator are added to obtain a mixed solution A. 100 μL DMAPbBr ₃ solution and 400 μL Cs ₂ CO ₃ solution were added dropwise to the mixed solution A. At this time, the solution showed a color change, and a CsPbBr ₃ quantum dot dispersion was prepared. As shown in Figure 7, the fluorescence emission peak of the CsPbBr ₃ quantum dot dispersion was located at 510 nm, the half-peak width was only 21 nm, and the luminescence quantum yield was only 57%. In addition, the CsPbBr ₃ quantum dot dispersion showed obvious precipitation after being placed in an air atmosphere at room temperature for 2 days (Figure 8), indicating that the surface ligand treatment has a significant effect on the luminescence efficiency and colloidal stability of the CsPbBr ₃ quantum dot dispersion. The inkjet printing and photolithography patterning of CsPbBr ₃ quantum dots are the same as those described in Example 1.

Example 3: A CsPb(ClBr) ₃ quantum dot dispersion

The specific preparation method of the CsPb(ClBr) ₃ quantum dot dispersion in this embodiment is as follows: First, 4 mmol of DMAPbCl ₃ and 4 mmol of DMAPbBr ₃ are dissolved in 5 mL of N,N-dimethylformamide, and ultrasonic treatment is used to ensure that they are fully dissolved. At the same time, 1 mmol of Cs ₂ CO ₃ is dissolved in a 5 mL volume of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and it is heated to 120 ^o C to promote dissolution. In addition, 1 mmol of tetraoctylammonium bromide is dissolved in 2.5 mL of toluene. 2 mL of isobornyl acrylate, 0.5 mL of tetramethylacrylate dimethacrylate and 0.5 mL of oleylamine are pre-mixed in a beaker, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator are added to obtain a mixed solution A. 100 μL of DMAPbCl ₃ and DMAPbBr ₃ mixed solution and 400 μL Cs ₂ CO ₃ solution were added dropwise to the mixed solution A. At this time, the solution showed a color change, and a CsPb(ClBr) ₃ quantum dot dispersion was prepared. In order to further improve the dispersion quality and luminous efficiency of CsPb(ClBr) ₃ quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially formulated mixed solution B (the solution B was prepared by mixing 1 mL of deionized water, 5 mL of anhydrous ethanol, and 100 mL of 28wt% ammonia water) were added to the above system to obtain a mixed solution C. After the mixed solution C was continuously stirred at 55 ^° C for 6 h, a CsPb(ClBr) ₃ high-performance perovskite quantum dot dispersion was finally obtained. As shown in Figure 9, the fluorescence emission peak of the CsPb(ClBr) ₃ quantum dot dispersion was located at 450 nm, the half-peak width was 19 nm, and the luminescence quantum yield was 41%.

The inkjet printing and photolithography patterning of CsPb(ClBr) ₃ quantum dots were the same as described in Example 1.

Example 4: A CsPb(BrI) ₃ quantum dot dispersion

The specific preparation method of the CsPb(BrI) ₃ quantum dot dispersion in this embodiment is as follows: First, 4 mmol of DMAPbBr ₃ and 4 mmol of DMAPbI ₃ are dissolved in 5 mL of N,N-dimethylformamide, and ultrasonic treatment is used to ensure that they are fully dissolved. At the same time, 1 mmol of Cs ₂ CO ₃ is dissolved in the same volume of 5 mL of bis(2,4,4-trimethylpentyl)phosphonic acid solution, and it is heated to 120 ^o C to promote dissolution. In addition, 1 mmol of tetraoctylammonium bromide is dissolved in 2.5 mL of toluene. 2 mL of isobornyl acrylate, 0.5 mL of tetramethylacrylate dimethacrylate and 0.5 mL of oleylamine are pre-mixed in a beaker, and 8 mg of diphenyl(2,4,6-trimethylbenzoyl)phosphine oxide and 8 mg of triphenylphosphine photoinitiator are added to obtain a mixed solution A. 100 μL of DMAPbBr ₃ and DMAPbI ₃ mixed solution and 400 μL Cs ₂ CO ₃ solution were added dropwise to the mixed solution A. At this time, the solution changed color and a CsPb(BrI) ₃ quantum dot dispersion was prepared. In order to further improve the dispersion quality and luminous efficiency of CsPb(BrI) ₃ quantum dots, 400 μL of tetraoctylammonium bromide solution, 50 μL of trimethoxysilane, 200 μL of trimethylpropyl methacrylate, 50 μL of 3-aminopropyltrimethoxysilane, and 25 μL of a specially formulated mixed solution B (the solution B was prepared by mixing 1 mL of deionized water, 5 mL of anhydrous ethanol, and 100 mL of 28wt% ammonia water) were added to the above system to obtain a mixed solution C. After the mixed solution C was stirred continuously for 6 h at 55 ^° C, a CsPb(BrI) ₃ high-performance perovskite quantum dot dispersion was finally obtained. As shown in Figure 10, the fluorescence emission peak of the CsPb(BrI) ₃ quantum dot dispersion was at 625 nm, the half-peak width was 33 nm, and the luminescence quantum yield was 38%.

The inkjet printing and photolithography patterning of CsPb(BrI) ₃ quantum dots were the same as described in Example 1.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, equivalent substitutions or modifications can be made according to the above description, and these substitutions and modifications should be included in the protection scope of the present invention.

Claims (9)

1. A perovskite quantum dot dispersion for inkjet printing and photolithography patterning, characterized in that the quantum dot dispersion comprises the following components: (a) perovskite quantum dots: as the core component of the ink, the chemical structure of which is APbX ₃ , wherein A is at least one of MA ⁺ , FA ⁺ , DMA ⁺ , NH ₄ ⁺ , Na ⁺ , K ⁺ , Rb ⁺ and Cs ⁺ , and X is F ^- , Cl ^- , Br ^- and I ^-at least one of; (b) a polymer monomer, the polymer monomer is selected from one or more of acrylic acid, methyl acrylate, ethyl acrylate, butyl acrylate, isobutyl acrylate, hexyl acrylate, isooctyl acrylate, lauryl acrylate, benzyl acrylate, cyclohexyl acrylate, perfluoroalkyl acrylate, hydroxyethyl phosphate acrylate, isobornyl acrylate, tetrahydrofuran methyl acrylate and isobornyl methacrylate; (c) a surface ligand, the surface ligand is selected from one or more of tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate and 3-aminopropyltrimethoxysilane; and (d) a photoinitiator, the photoinitiator is 2,4,6-trimethylbenzoyl-diphenylphosphine oxide, phenyl benzophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl-1-(4-methylthiophenyl)-2-morpholinyl-1-propanone, triphenylphosphine or benzoyl azobisisobutyronitrile; E. A crosslinking agent, wherein the crosslinking agent is selected from one or more of 1,4-butanediol dimethacrylate, ethylene glycol dimethacrylate, ethylene glycol dimethacrylate, trimethylolpropane trimethacrylate, dipentaerythritol tetraacrylate, and dimethacrylate tetramethacrylate. 2. The perovskite quantum dot dispersion according to claim 1, characterized in that, based on the total mass of the quantum dot dispersion, the mass percentage of the perovskite quantum dots is 1% to 60%; the mass percentage of the polymer monomer is 10% to 70%; the mass percentage of the surface ligand is 1% to 5%; the mass percentage of the photoinitiator is 1% to 10%; and the mass percentage of the cross-linking agent is 5% to 20%. 3. The perovskite quantum dot dispersion according to claim 1, characterized in that the _CsPbX3 quantum dots are prepared by a method comprising the following steps: firstly dissolving _DMAPbX3 in _N ,N-dimethylformamide, and then reacting with _A2CO3 dissolved in bis(2,4,4-trimethylpentyl)phosphonic acid to synthesize _APbX3 quantum dots, wherein the molar ratio of _DMAPbX3 to _A2CO3 is 3:1~1:3, and _{the A2CO3} solution needs to be heated during the synthesis process to ensure sufficient dissolution; preferably, firstly dissolving _DMAPbX3 in N,N-dimethylformamide, and then reacting with _Cs2CO3 dissolved in bis(2,4,4 _- trimethylpentyl) _phosphonic acid to synthesize _CsPbX3 quantum dots. 4. The perovskite quantum dot dispersion according to claim 1, characterized in that the photoinitiator is at least two different types of photoinitiators, and preferably the photoinitiator is diphenyl (2,4,6-trimethylbenzoyl) phosphine oxide and triphenylphosphine. 5. The perovskite quantum dot dispersion according to claim 1, characterized in that the surface ligands include tetraoctylammonium bromide, trimethoxysilane, tris(trimethoxysilyl)propyl methacrylate, 3-aminopropyltrimethoxysilane, and a mixed solution consisting of deionized water, anhydrous ethanol and ammonia water; wherein the volume ratio of tetraoctylammonium bromide: trimethoxysilane: tris(trimethoxysilyl)propyl methacrylate: 3-aminopropyltrimethoxysilane: mixed solution = (100-600 μL): (10-100 μL): (50-600 μL): (10-100 μL): (20-100 μL). 6. A method for preparing a perovskite quantum dot dispersion according to any one of claims 1 to 5, characterized in that it comprises the following steps: first, pre-mixing a polymer monomer and a cross-linking agent, and simultaneously adding diphenyl (2,4,6-trimethylbenzoyl) phosphine oxide and a _{triphenylphosphine} photoinitiator; then, dropwise adding dissolved _DMAPbBr3 and _Cs2CO3 solutions; then adding dissolved surface ligands tetraoctylammonium bromide, trimethoxysilane, tris (trimethoxysilyl) propyl methacrylate, 3-aminopropyltrimethoxysilane and a mixed solution formed by mixing deionized water, anhydrous ethanol and ammonia water; and stirring the mixed solution at a constant temperature of 25-65 ^° C for 2-12 hours to complete the preparation of a high-quality perovskite quantum dot dispersion. 7. An inkjet printing method based on the perovskite quantum dot dispersion according to any one of claims 1 to 5, characterized in that it comprises the following steps: firstly, the glass substrate is cleaned, the dispersion is filtered with an organic filter membrane, and a microarray is precisely inkjet printed through a nozzle with a diameter in the range of 1.3 to 4.2 microns. 8. A photolithography patterning method based on the perovskite quantum dot dispersion according to any one of claims 1 to 5, characterized in that it comprises the following steps: cleaning the substrate and performing plasma surface activation treatment; coating the dispersion to form a uniform perovskite quantum dot film, and pre-baking it; selectively exposing the film through a mask using ultraviolet light of 365 nm wavelength; and rinsing the film with a solvent after exposure to obtain a refined perovskite quantum dot pattern. 9. The use of the perovskite quantum dot dispersion according to any one of claims 1 to 5, characterized in that it is used in the manufacture of Micro-LED, quantum dot light-emitting diode (QLED) displays, solar cells or photodetector electronic and optoelectronic devices.