CN118502203A - OVL overlay mark graph and method for improving overlay error measurement accuracy - Google Patents
OVL overlay mark graph and method for improving overlay error measurement accuracy Download PDFInfo
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- CN118502203A CN118502203A CN202410669784.0A CN202410669784A CN118502203A CN 118502203 A CN118502203 A CN 118502203A CN 202410669784 A CN202410669784 A CN 202410669784A CN 118502203 A CN118502203 A CN 118502203A
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- H10P76/4085—
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7092—Signal processing
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- Length Measuring Devices By Optical Means (AREA)
Abstract
本发明提供一种OVL套刻标识图形，包括：间隔设置的目标OVL图形与参考OVL图形，目标OVL图形包括前层光栅结构及当层光栅结构，其包括紧邻设置的第一光栅图形与第二光栅图形，且第一光栅图形包括多个间隔排列的第一条形光栅，第二光栅图形包括多个间隔排列的述第二条形光栅，当层光栅结构包括紧邻设置的第三光栅图形与第四光栅图形，且第三光栅图形包括多个间隔排列的第三条形光栅，第四光栅图形包括多个的间隔排列的第四条形光栅；参考OVL图形包括前层光栅结构。通过本发明解决了现有的外围Fin形貌差异造成的前层光栅结构对称性不好的问题。
The present invention provides an OVL overlay mark pattern, comprising: a target OVL pattern and a reference OVL pattern arranged at intervals, the target OVL pattern comprising a front layer grating structure and a current layer grating structure, which comprises a first grating pattern and a second grating pattern arranged adjacent to each other, and the first grating pattern comprises a plurality of first strip gratings arranged at intervals, the second grating pattern comprises a plurality of second strip gratings arranged at intervals, the current layer grating structure comprises a third grating pattern and a fourth grating pattern arranged adjacent to each other, and the third grating pattern comprises a plurality of third strip gratings arranged at intervals, and the fourth grating pattern comprises a plurality of fourth strip gratings arranged at intervals; the reference OVL pattern comprises a front layer grating structure. The present invention solves the problem of poor symmetry of the front layer grating structure caused by the existing peripheral Fin morphology difference.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an OVL overlay mark graph and a method for improving overlay error measurement accuracy.
Background
With the advancement of integrated circuit manufacturing technology, the Critical Dimension (CD) of semiconductor devices continues to shrink, and the minimum resolution of a deep ultraviolet light source (DUV) immersion lithography machine based on 193nm wavelength is 76nm, which cannot meet the requirements of the sustainable development of the semiconductor industry. In order to further reduce the wavelength of the lithography machine, an ultraviolet (EUV) light source is used, however, although the resolution of the lithography machine can be greatly improved, the above method is limited to EUV lithography machine technology, related lithography materials, and the like, and EUV lithography technology has not been widely used in the entire semiconductor manufacturing field. In order to obtain smaller CDs, self-aligned dual imaging (SADP) or self-aligned quad imaging (SAQP) techniques have been developed and are widely used in advanced semiconductor technology nodes. The self-aligned multiple imaging technique firstly performs one-time lithography and etching to form a pattern, then uniformly deposits a film with a specific thickness on the pattern, then removes the initially formed pattern by etching with a high selectivity, and retains the pattern deposited on the side wall, and finally forms a Fin structure by etching. Thus, a pattern structure with a pattern period which is only half of the pattern period of the photoetching is formed by one photoetching, and the pattern density per unit area is doubled.
The self-aligned multiple imaging is different from the original one-time lithography-etch forming technique, and challenges are presented to the design of conventional lithography alignment and metrology patterns. Such as conventional overlay error (OVL) metrology patterns, are typically composed of grating structures of equal Line (Line) and Space (Space) widths. In order to solve this problem, the original design of the lines is generally modified, the lines are divided (Segment), and an original line is equally divided into lines with a width of only about one tenth of the original width, so that the area of the original line is composed of tens of Fins. Fin and Fin are indistinguishable upon optical measurement, and finally a periodic signal formed by line and Space consisting of Fin is still obtained. The method is also a main design idea of an optical measurement graph based on a self-aligned multiple imaging technology. However, since the original line is composed of several tens of fins, during the formation of fins, the middle Fin and the outermost Fin are etched in different environments, which results in different degrees of tilting of the two outermost fins (as shown in fig. 1). And because Fin's CD is very small, it is very sensitive to the environment of the Etch cavity, and the inclination degree of peripheral Fin will be specially distributed on the whole silicon wafer.
The OVL pattern composed of Fin is generally used as a bottom pattern measured by about ten subsequent layers of OVL in layer lithography, the corresponding top pattern is formed by the current layer lithography layer, and the symmetry of the bottom layer OVL pattern is poor due to the appearance difference of peripheral Fin.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, the present invention is directed to providing a method for OVL overlay mark pattern and improving overlay error measurement accuracy, which is used for solving the problem of poor symmetry of front layer grating structure caused by the existing peripheral Fin morphology difference.
To achieve the above and other related objects, the present invention provides an OVL overlay mark pattern, including: a target OVL pattern and a reference OVL pattern spaced apart,
The target OVL graph comprises a front layer grating structure and a current layer grating structure, the front layer grating structure is formed below the current layer grating structure and comprises a first grating graph and a second grating graph which are arranged in an adjacent mode, the first grating graph comprises a plurality of first bar gratings which are arranged at intervals and extend along a first direction, the second grating graph comprises a plurality of second bar gratings which are arranged at intervals and extend along a second direction, the current layer grating structure comprises a third grating graph and a fourth grating graph which are arranged in an adjacent mode, the third grating graph comprises a plurality of third bar gratings which are arranged at intervals and extend along the first direction, and the fourth grating graph comprises a plurality of fourth bar gratings which are arranged at intervals and extend along the second direction;
the reference OVL pattern including the front layer grating structure;
Each of the first bar grating and the second bar grating comprises a plurality of fin structures which are arranged at intervals, and the first direction is perpendicular to the second direction.
Optionally, the first and second bar gratings have the same width, number and period except for the extending direction, and the width is a,200nm < a <800nm, the number is between 4 and 10, and the period is b,400nm < b <160 nm.
Optionally, the third bar grating and the fourth bar grating have the same width, number and period except the extending direction, and have the width of c,200nm < c <800nm, the number of between 4 and 10, and the period of d,400nm < d <160 nm.
Optionally, a spacing between the target OVL pattern and the reference OVL pattern is greater than 1 μm and less than 50 μm.
Optionally, the number of the first grating patterns is 2, the number of the second grating patterns is 2, and in the front layer grating structure, 2 first grating patterns are diagonally arranged, and 2 second grating patterns are diagonally arranged.
Optionally, the number of the third grating patterns is 2, the number of the fourth grating patterns is 2, and in the current layer grating structure, 2 third grating patterns are diagonally arranged, and 2 fourth grating patterns are diagonally arranged.
Optionally, the fin structure is formed by performing a self-aligned dual imaging technique on the sub-grating structure after dividing the first and second bar gratings into sub-grating structures.
Optionally, the line width e of the sub-grating structure is 5nm < e <20nm, the period is f,10nm < f <40nm, and a=3f+e.
Correspondingly, the invention also provides a method for improving overlay error measurement accuracy, which comprises the following steps:
providing the OVL overlay mark pattern as described above;
Measuring the OVL overlay mark pattern based on a diffraction overlay error measurement method, and acquiring optical signals of a target OVL pattern and the reference OVL pattern in the measurement process;
and calculating the asymmetry of the front layer grating structure according to the optical signal of the reference OVL pattern, and stripping the asymmetry from the optical signal of the target OVL pattern to obtain a corrected OVL result.
Optionally, the method of calculating the asymmetry of the front layer grating structure from the optical signal of the reference OVL pattern and stripping it from the optical signal of the target OVL pattern to obtain a corrected OVL result includes: acquiring the light intensity of the reference OVL graph; calculating the light intensity difference between the +1 order diffraction light intensity and the-1 order diffraction light intensity; calculating the asymmetry of the reference OVL graph according to the light intensity difference; calculating the diffraction phase difference of the reference OVL graph according to the asymmetry of the reference OVL graph; correcting the diffraction light phase of the front layer grating structure of the target OVL pattern; correcting the light intensity of the target OVL pattern according to the obtained diffraction light phase of the front layer grating structure; and calculating according to the corrected light intensity of the target OVL graph to obtain a corrected OVL result.
As described above, the method for identifying patterns by overlay and improving the accuracy of overlay error measurement of the present invention sets a reference OVL pattern without an overlay grating structure at a certain distance from a target OVL pattern with an overlay grating structure, captures the optical signal of the target OVL pattern and the optical signal of the reference OVL pattern at one time when DBO measurement is performed, the former includes the OVL signal and the asymmetry information of the front layer grating structure, and the latter includes only the asymmetry information of the front layer grating structure, and obtains the final OVL result by subtracting the asymmetry information of the front layer grating structure from the target OVL pattern. According to the method, the OVL measurement result is corrected by measuring and removing the asymmetry information of the front-layer grating structure, so that the influence of the asymmetry of the front-layer grating structure on the OVL is reduced, and the accuracy of the OVL measurement is improved.
Drawings
Fig. 1 shows an electron microscope schematic representation of a prior art formed Fin structure Fin.
Fig. 2 shows a schematic diagram of OVL overlay mark patterns of the present invention.
Fig. 3 is a schematic diagram of a front layer grating structure according to the present invention.
Fig. 4 is a schematic diagram of a layer-on-layer grating structure according to the present invention.
Fig. 5 is a schematic cross-sectional view showing the cross-sectional structures of the target OVL pattern and the reference OVL pattern of the invention.
Fig. 6 is a schematic diagram showing a sub-grating structure divided by a bar grating in the front layer grating structure according to the present invention.
Fig. 7 shows a schematic diagram of a front-layer grating structure consisting of Fin according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 7. It should be noted that, the illustrations provided in the present embodiment are merely schematic illustrations of the basic concepts of the present invention, and only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
As shown in fig. 2 to 5, this embodiment provides an OVL overlay mark pattern, including: a target OVL pattern and a reference OVL pattern spaced apart,
The target OVL graph comprises a front layer grating structure and a current layer grating structure, the front layer grating structure is formed below the current layer grating structure and comprises a first grating graph and a second grating graph which are arranged in an adjacent mode, the first grating graph comprises a plurality of first bar gratings which are arranged at intervals and extend along a first direction X, the second grating graph comprises a plurality of second bar gratings which are arranged at intervals and extend along a second direction Y, the current layer grating structure comprises a third grating graph and a fourth grating graph which are arranged in an adjacent mode, the third grating graph comprises a plurality of third bar gratings which are arranged at intervals and extend along the first direction X, and the fourth grating graph comprises a plurality of fourth bar gratings which are arranged at intervals and extend along the second direction Y;
the reference OVL pattern including the front layer grating structure;
each of the first bar grating and the second bar grating includes a plurality of Fin structures Fin arranged at intervals, and the first direction X is perpendicular to the second direction Y.
Specifically, the first bar grating and the second bar grating have the same width, number and period except the extending direction, the width is a,200nm < a <800nm, the number is between 4 and 10, and the period is b,400nm < b <160 nm.
In this embodiment, preferably, the widths a=b/2, a=400 nm, and b=800 nm, and the number of the first bar grating and the second bar grating is 8.
Specifically, the third bar grating and the fourth bar grating have the same width, number and period except the extending direction, and have the width of c,200nm < c <800nm, the number of between 4 and 10, and the period of d,400nm < d <160 nm.
In this embodiment, preferably, the width c=d/2, and c=400 nm, and the number of the third bar grating and the fourth bar grating is 8.
Specifically, the spacing between the target OVL pattern and the reference OVL pattern is greater than 1 μm and less than 50 μm.
In this embodiment, the interval g between the target OVL pattern and the reference OVL pattern takes a value of 10 μm.
Specifically, the number of the first grating patterns is 2, the number of the second grating patterns is 2, and in the front layer grating structure, 2 first grating patterns are diagonally arranged, and 2 second grating patterns are diagonally arranged.
Specifically, the number of the third grating patterns is 2, the number of the fourth grating patterns is 2, and in the current layer grating structure, 2 third grating patterns are diagonally arranged, and 2 fourth grating patterns are diagonally arranged.
As shown in fig. 6 and 7, specifically, the fin structure is formed by dividing the first stripe grating and the second stripe grating into sub-grating structures, and then performing a self-aligned dual imaging technique on the sub-grating structures.
Specifically, the line width e of the sub-grating structure is 5nm < e <20nm, the period is f,10nm < f <40nm, and a=3f+e.
Example two
Correspondingly, the embodiment also provides a method for improving overlay error measurement accuracy, which comprises the following steps:
providing the OVL overlay mark pattern of embodiment one;
Measuring the OVL overlay mark patterns based on a diffraction overlay error measurement method, and acquiring optical signals of a target OVL pattern and a reference OVL pattern in the measurement process;
and calculating the asymmetry of the front layer grating structure according to the optical signal of the reference OVL pattern, and stripping the asymmetry from the optical signal of the target OVL pattern to obtain a corrected OVL result.
Specifically, the method for calculating the asymmetry of the front layer grating structure according to the optical signal of the reference OVL pattern and stripping the asymmetry from the optical signal of the target OVL pattern to obtain a corrected OVL result includes: acquiring the light intensity of the reference OVL graph; calculating the light intensity difference between the +1 order diffraction light intensity and the-1 order diffraction light intensity; calculating the asymmetry of the reference OVL graph according to the light intensity difference; calculating the diffraction phase difference of the reference OVL graph according to the asymmetry of the reference OVL graph; correcting the diffraction light phase of the front layer grating structure of the target OVL pattern; correcting the light intensity of the target OVL pattern according to the obtained diffraction light phase of the front layer grating structure; and calculating according to the corrected light intensity of the target OVL graph to obtain a corrected OVL result.
In summary, according to the method for performing OVL overlay mark pattern and improving overlay error measurement accuracy of the present invention, a reference OVL pattern without an overlay grating structure is disposed at a certain distance from a target OVL pattern with an overlay grating structure, and when DBO measurement is performed, an optical signal of the target OVL pattern and an optical signal of the reference OVL pattern are captured at one time, the former includes an OVL signal and asymmetry information of a front layer grating structure, the latter includes only asymmetry information of a front layer grating structure, and a final OVL result is obtained by subtracting the asymmetry information of the front layer grating structure from the target OVL pattern. According to the method, the OVL measurement result is corrected by measuring and removing the asymmetry information of the front-layer grating structure, so that the influence of the asymmetry of the front-layer grating structure on the OVL is reduced, and the accuracy of the OVL measurement is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. An OVL overlay logo graphic, comprising: a target OVL pattern and a reference OVL pattern spaced apart,
The target OVL graph comprises a front layer grating structure and a current layer grating structure, the front layer grating structure is formed below the current layer grating structure and comprises a first grating graph and a second grating graph which are arranged in an adjacent mode, the first grating graph comprises a plurality of first bar gratings which are arranged at intervals and extend along a first direction, the second grating graph comprises a plurality of second bar gratings which are arranged at intervals and extend along a second direction, the current layer grating structure comprises a third grating graph and a fourth grating graph which are arranged in an adjacent mode, the third grating graph comprises a plurality of third bar gratings which are arranged at intervals and extend along the first direction, and the fourth grating graph comprises a plurality of fourth bar gratings which are arranged at intervals and extend along the second direction;
the reference OVL pattern including the front layer grating structure;
Each of the first bar grating and the second bar grating comprises a plurality of fin structures which are arranged at intervals, and the first direction is perpendicular to the second direction.
2. The OVL overlay logo graphic of claim 1, wherein the first and second bar gratings are identical in width, number and period except for the direction of extension, and have a width a,200nm < a <800nm, number between 4 and 10, period b,400nm < b <160 nm.
3. The OVL overlay logo graphic of claim 1, wherein the third and fourth bar gratings are identical in width, number and period except for the direction of extension, and have a width c,200nm < c <800nm, a number between 4 and 10, and a period d,400nm < d <160 nm.
4. The OVL overlay mark pattern according to claim 1, wherein a spacing between the target OVL pattern and the reference OVL pattern is greater than 1 μιη and less than 50 μιη.
5. The OVL overlay mark pattern according to claim 1, wherein the number of the first grating patterns is 2, the number of the second grating patterns is 2, and in the front layer grating structure, 2 of the first grating patterns are diagonally arranged, and 2 of the second grating patterns are diagonally arranged.
6. The OVL overlay mark pattern according to claim 1, wherein the number of the third grating patterns is 2, the number of the fourth grating patterns is 2, and in the present layer grating structure, 2 of the third grating patterns are diagonally arranged, and 2 of the fourth grating patterns are diagonally arranged.
7. The OVL overlay mark pattern of claim 2, wherein the fin structure is formed by a self-aligned dual imaging technique on the sub-grating structure after dividing the first and second bar gratings into sub-grating structures.
8. The OVL overlay mark pattern of claim 7, wherein the sub-grating structure has a linewidth e of 5nm < e <20nm, a period f,10nm < f <40nm, and a = 3f+e.
9. A method for improving overlay error measurement accuracy, the method comprising:
Providing an OVL overlay logo graphic according to any one of claims 1-6;
Measuring the OVL overlay mark patterns based on a diffraction overlay error measurement method, and acquiring optical signals of a target OVL pattern and a reference OVL pattern in the measurement process;
and calculating the asymmetry of the front layer grating structure according to the optical signal of the reference OVL pattern, and stripping the asymmetry from the optical signal of the target OVL pattern to obtain a corrected OVL result.
10. The method of claim 9, wherein calculating the asymmetry of the front layer grating structure from the optical signal of the reference OVL pattern and stripping it from the optical signal of the target OVL pattern to obtain a corrected OVL result comprises:
Acquiring the light intensity of the reference OVL graph;
calculating the light intensity difference between the +1 order diffraction light intensity and the-1 order diffraction light intensity;
calculating the asymmetry of the reference OVL graph according to the light intensity difference;
Calculating the diffraction phase difference of the reference OVL graph according to the asymmetry of the reference OVL graph;
Correcting the diffraction light phase of the front layer grating structure of the target OVL pattern;
Correcting the light intensity of the target OVL pattern according to the obtained diffraction light phase of the front layer grating structure;
and calculating according to the corrected light intensity of the target OVL graph to obtain a corrected OVL result.
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