CN118168837B - Twin crystal defect detection method, system and computer storage medium - Google Patents
Twin crystal defect detection method, system and computer storage medium Download PDFInfo
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Abstract
本公开实施例公开了一种孪晶缺陷的检测方法、系统及计算机存储介质，所述检测方法包括：从待测单晶硅棒上取样得到第一样品硅片和第二样品硅片；当所述第一样品硅片上的第一线缺陷和所述第二样品硅片上的第二线缺陷的晶向均平行于<110>晶向时，分别测量得到所述第一线缺陷所对应的第一长度和所述第二线缺陷所对应的第二长度；基于所述第一样品硅片和所述第二样品硅片在所述待测单晶硅棒的轴向方向的第一距离、所述第一长度以及所述第二长度，判定所述待测单晶硅棒的内部是否存在孪晶缺陷。
The embodiments of the present disclosure disclose a method, system and computer storage medium for detecting twin defects. The detection method includes: sampling a first sample silicon wafer and a second sample silicon wafer from a single crystal silicon rod to be tested; when the crystal directions of a first line defect on the first sample silicon wafer and a second line defect on the second sample silicon wafer are both parallel to the <110> crystal direction, respectively measuring a first length corresponding to the first line defect and a second length corresponding to the second line defect; based on a first distance between the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be tested, the first length and the second length, determining whether there is a twin defect inside the single crystal silicon rod to be tested.
Description
Technical Field
The embodiment of the disclosure relates to the technical field of semiconductor manufacturing, in particular to a twin crystal defect detection method, a twin crystal defect detection system and a computer storage medium.
Background
Currently, silicon wafers are the most widely used device substrates in the electronic information field. In general, a silicon wafer is obtained by subjecting a single crystal silicon rod produced by the Czochralski method to a process such as wire cutting, grinding, etching, and polishing. Specifically, the Czochralski method is a method in which a polycrystalline silicon raw material is melted, and then a seed crystal having a specific crystal orientation is immersed in a polycrystalline silicon melt to prepare a single crystal silicon rod. In the preparation process of the monocrystalline silicon rod, silicon atoms are downwards distributed according to the crystal orientation distribution rule of the seed crystal, so that the length is increased until the preparation of the monocrystalline silicon rod is completed.
However, various defects may be generated in the interior of the single crystal silicon rod due to the influence of various factors during the preparation of the single crystal silicon rod. Defects of the single crystal silicon rod are classified into point defects, line defects, and plane defects. Wherein, the twin crystal defect is a surface defect which often occurs in the process of preparing the monocrystalline silicon rod. Twin defects are generally caused by the fact that the crystal orientation arrangement of silicon atoms is affected by the stress introduced by impurities during the crystal growth process, so that the crystal orientation arrangement of silicon atoms deviates from the arrangement direction of crystal orientations in the seed crystal, and the phenomenon of crystal orientation torsion in the single crystal silicon rod occurs. In the preparation process of the single crystal silicon rod, if the twin crystal defect continuously grows along the new growth direction, the craftsman can find that the edge line at the outer side of the single crystal silicon rod disappears or deviates by a certain angle, so that the single crystal silicon rod with the twin crystal defect is re-prepared after remelting, and the production efficiency is reduced. Moreover, since it is difficult to detect twin defects inside the single crystal silicon rod in the early stage, the twin defects cannot be detected through a Nano (Nano) morphology test, a differential interference contrast microscope (DIFFERENTIAL INTERFERENCE ContrastMicroscope, DIC) test, a stress test or a surface particle test until the final polishing process, resulting in waste of productivity.
Disclosure of Invention
Accordingly, the embodiment of the disclosure is expected to provide a method, a system and a computer storage medium for detecting twin crystal defects, which can accurately judge twin crystal defects in a monocrystalline silicon rod, improve production efficiency and reduce waste of productivity.
The technical scheme of the embodiment of the disclosure is realized as follows:
in a first aspect, an embodiment of the present disclosure provides a method for detecting a twin defect, the method including:
sampling from a monocrystalline silicon rod to be detected to obtain a first sample silicon wafer and a second sample silicon wafer;
when the crystal directions of a first line defect on the first sample silicon wafer and a second line defect on the second sample silicon wafer are parallel to a <110> crystal direction, respectively measuring to obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect, wherein the first length is smaller than the second length;
And judging whether twin crystal defects exist in the single crystal silicon rod to be detected or not based on the first distance, the first length and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected.
In a second aspect, an embodiment of the present disclosure provides a system for detecting a twin crystal defect, the system including a sampling portion, a measuring portion, and a determining portion, wherein,
The sampling part is used for sampling from a monocrystalline silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
The measuring part is configured to respectively measure and obtain a first length corresponding to the first twin line and a second length corresponding to the second twin line when the crystal directions of the first twin line on the first sample silicon wafer and the second twin line on the second sample silicon wafer are parallel to the <110> crystal direction;
The judging part is configured to judge whether twin crystal defects exist in the single crystal silicon rod to be detected based on a first distance between the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected, the first length and the second length.
In a third aspect, embodiments of the present disclosure provide a system for detecting a twin crystal defect, the system comprising a band saw or wire saw, and a data processing subsystem, wherein,
The band saw or the wire cutting machine is used for sampling from a monocrystalline silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
the data processing subsystem is configured to:
when the crystal directions of a first line defect on the first sample silicon wafer and a second line defect on the second sample silicon wafer are parallel to a <110> crystal direction, respectively measuring to obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect, wherein the first length is smaller than the second length;
And judging whether twin crystal defects exist in the single crystal silicon rod to be detected or not based on the first distance, the first length and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected.
In a fourth aspect, embodiments of the present disclosure provide a computer storage medium storing a detection program of a twin defect, the detection program of a twin defect being executed by at least one processor to perform the steps of the detection method of a twin defect according to the first aspect.
The embodiment of the disclosure provides a method, a device, equipment and a computer storage medium for detecting twin crystal defects, wherein a first sample silicon wafer and a second sample silicon wafer are obtained by sampling from a single crystal silicon rod to be detected, when the crystal directions of the first line defects on the first sample silicon wafer and the second line defects on the second sample silicon wafer are parallel to a <110> crystal direction, the first length corresponding to the first line defects and the second length corresponding to the second line defects are respectively measured, and then whether the twin crystal defects exist inside the single crystal silicon rod to be detected can be determined according to the first distance, the first length and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected. According to the technical scheme provided by the embodiment of the disclosure, whether twin crystal defects exist in the monocrystalline silicon rod can be accurately judged, so that the twin crystal defects are different from naked eyes of process staff, judging errors are reduced, production efficiency is improved, and waste of productivity is reduced.
Drawings
FIG. 1 is a schematic view of the arrangement of silicon atoms in a single crystal silicon rod with twinning defects provided in an embodiment of the present disclosure;
FIG. 2 is a twin defect of the (111) plane in a single crystal silicon rod provided by an embodiment of the present disclosure;
fig. 3 is a flow chart of a method for detecting a twin crystal defect according to an embodiment of the disclosure;
FIG. 4 is a schematic view of a <110> crystal orientation provided by an embodiment of the present disclosure;
FIG. 5 is a schematic diagram of a first line defect on a first sample wafer and a second line defect on a second sample wafer provided in an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of a second length of a second line defect on a second sample silicon wafer provided by an embodiment of the present disclosure;
FIG. 7 is a schematic diagram showing a first line defect on a first sample wafer and a second line defect on a second sample wafer according to an embodiment of the present disclosure;
FIG. 8 is a schematic illustration of a first line defect on a first sample wafer and a second line defect on a second sample wafer provided by an embodiment of the present disclosure being intact;
FIG. 9 is a schematic illustration of a first line defect on a first sample wafer provided by an embodiment of the present disclosure;
FIG. 10 is a schematic diagram of a first line defect on a first sample silicon wafer and a second line defect on a second sample silicon wafer corresponding to embodiment 1 provided in the present disclosure;
FIG. 11 is a schematic diagram of a first line defect on a first sample silicon wafer and a second line defect on a second sample silicon wafer corresponding to embodiment 2 provided in the present disclosure;
FIG. 12 is a schematic diagram of a system for detecting a twin defect according to an embodiment of the disclosure;
FIG. 13 is a schematic diagram of another system for detecting twin defects according to an embodiment of the present disclosure;
fig. 14 is a schematic hardware composition diagram of a twin crystal defect detection system according to an embodiment of the disclosure;
Fig. 15 is a block diagram of a computing device provided by an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings in the embodiments of the present disclosure.
Referring to fig. 1, there is shown a schematic view of the arrangement of silicon atoms in a single crystal silicon rod having twin defects. The twin defects in the single crystal silicon rod shown in fig. 1 are due to torsion of the lattice thereat caused by one impurity (e.g., column 4, column 5, and column 6 in fig. 1). The torsion of the crystal lattice releases the stress introduced by the impurities, so that the twin line is twisted to the original position again after only sustaining a few or tens of atomic bond lengths on a plane so as to perform crystal growth according to a growth axis defined by the seed crystal. At this time, the twin line starts from the starting point by several tens ofExtends in the single crystal silicon rod, generally along the (111) crystal plane within the single crystal silicon rod of the <100> crystal orientation, to the edge of the single crystal silicon rod until it is detached from the single crystal silicon rod. That is, such a twin line produces a thickness of several tens of a in a single crystal silicon rodTwin defects of the (111) crystal plane of (d) but do not cause the ridge line outside the single crystal silicon rod to break. That is, the several shown in FIG. 1The twisted arrangement of (c) expands along the (111) plane and extends until the single crystal silicon rod is ejected.
As shown in fig. 2, which shows twin defects (shown as a triangle with diagonal lines in fig. 2) of the (111) plane in the single crystal silicon rod (shown as a cylinder in fig. 2). Although the twin crystal defect is a surface defect of the (111) crystal face in the interior of the single crystal silicon rod, when the silicon wafer is obtained by wire cutting, only one piece of the silicon wafer has a width of several tensIs a twin line of (c). Because the whole single crystal silicon rod is not detected by an effective means in the early stage, the silicon wafer is easily broken along the dissociation direction by polishing processes of grinding, corrosion, polishing and the like after being obtained by online cutting, so that the twin crystal defect in the single crystal silicon rod is difficult to detect in the early stage, the twin crystal defect cannot be detected until the final polishing process is finished, and the waste of productivity is caused.
The twin line extends along the (111) crystal plane to form a twin crystal plane in the interior of the single crystal silicon rod, but the thin thickness of the twin crystal defect does not cause the loss of the single crystal property of the single crystal silicon rod, so that the twin crystal defect possibly exists in the crystal rod which looks like a complete single crystal, and is difficult to monitor by a conventional means. Even if the test is performed by a test means, the twin defect is only one twin line in the silicon wafer, and may cause a tiny line defect due to scratch of abrasive grains in a polishing process, or an abnormality of a mechanical arm may scratch a line defect on the surface of the silicon wafer in the process of transferring the silicon wafer, so that in an actual process, a process staff may estimate the generation of the twin line on the silicon wafer as scratch of the abrasive grains or the mechanical arm, and it is difficult to directly obtain the twin line on the silicon wafer due to the twin defect in the monocrystalline silicon rod.
Based on the above explanation, referring to fig. 3, a method for detecting a twin crystal defect according to an embodiment of the disclosure is shown, and the method specifically includes the following steps.
In step S301, a first sample silicon wafer and a second sample silicon wafer are obtained by sampling from a single crystal silicon rod to be tested.
In the specific implementation process, after the first sample silicon wafer and the second sample silicon wafer are obtained by wire cutting from the single crystal silicon rod to be detected, chemical polishing or finish polishing is carried out on the first sample silicon wafer and the second sample silicon wafer to remove the damaged layers on the surfaces of the first sample silicon wafer and the second sample silicon wafer, so that the damage layers are prevented from affecting twin crystal line measurement on the first sample silicon wafer and the second sample silicon wafer.
In general, preferential etching is performed after chemical polishing or finish polishing of the first and second sample wafers, and line defects on the first and second sample wafers are tested by a stress selection test or differential interference contrast microscope.
In the embodiments of the present disclosure, the etching solution in the preferential etching is not particularly limited.
In step S302, when the crystal orientations of the first line defect on the first sample silicon wafer and the second line defect on the second sample silicon wafer are parallel to the <110> crystal orientation, a first length corresponding to the first line defect and a second length corresponding to the second line defect are measured, respectively, where the first length is smaller than the second length.
As shown in fig. 2, when a twin defect of a (111) crystal plane exists in the single crystal silicon rod to be measured, a line defect with a certain width, that is, the twin line, appears in the first sample silicon wafer and the second sample silicon wafer obtained by the line cutting.
Since the twin defect is a plane defect on the (111) crystal plane, then the first line defect on the first sample wafer and the second line defect on the second sample wafer are parallel to the <110> crystal orientation. Therefore, in the embodiment of the present disclosure, when determining whether a twin defect exists in the interior of the single crystal silicon rod to be measured, it is first necessary to determine whether the first line defect on the first sample silicon wafer and the second line defect on the second sample silicon wafer are parallel to the <110> crystal orientation.
As shown in fig. 4, the intersection line of the (111) crystal plane (the diagonally filled triangular region in fig. 4) and the (100) crystal plane (the rhombically filled quadrangular region in fig. 4) is the above-described <110> crystal orientation, wherein the <110> crystal orientation is also the cleavage direction of the above-described silicon wafer. In some examples, the <110> crystal orientation recited in embodiments of the present disclosure is also the Notch direction.
On the other hand, since the twin crystal defect in the single crystal silicon rod to be measured is a plane defect of the (111) crystal plane, and the (111) crystal plane is an equilateral triangle, when the twin crystal defect in the single crystal silicon rod to be measured is as shown in fig. 2, the first length defining the first line defect on the first sample silicon wafer is smaller than the second length defining the second line defect on the second sample silicon wafer in the embodiment of the present disclosure, which can be characterized in that the first sample silicon wafer is located at the upper position of the second sample silicon wafer, in particular as shown in fig. 5, the line segment a 1 represents the first line defect on the first sample silicon wafer W 1, and the line segment a 2 represents the second line defect on the first sample silicon wafer W 2.
In step S303, it is determined whether or not a twin defect exists in the single crystal silicon rod to be measured based on the first distance, the first length, and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be measured.
In order to determine whether the first line defect a 1 on the first sample wafer W 1 and the second line defect a 2 on the second sample wafer W 2 are caused by, for example, a scratch of abrasive grains in a polishing process or a scratch of a robot arm in a transfer process or a twin defect is generated in a preparation process of a single crystal silicon rod, and thus the first sample wafer W 1 and the second sample wafer W 2 are each caused to have a line defect, in the embodiment of the present disclosure, based on the characteristics of the twin defect, whether the twin defect exists inside the single crystal silicon rod to be measured is determined according to a first distance (shown as h in fig. 5) of the first sample wafer W 1 and the second sample wafer W 2 in an axial direction of the single crystal silicon rod to be measured, a first length L 1 of the first line defect a 1, and a second length L 2 of the second line defect a 2.
For the technical solution shown in fig. 3, a first sample wafer W 1 and a second sample wafer W 2 are obtained by sampling from a single crystal silicon rod to be tested, when the crystal directions of a first line defect a 1 on the first sample wafer W 1 and a second line defect a 2 on the second sample wafer W 2 are parallel to the <110> crystal direction, a first length L 1 corresponding to the first line defect a 1 and a second length L 2 corresponding to the second line defect a 2 are respectively measured, and then, according to a first distance h between the first sample wafer W 1 and the second sample wafer W 2 in the axial direction of the single crystal silicon rod to be tested, the first length L 1 and the second length L 2, it is possible to determine whether a twin defect exists inside the single crystal silicon rod to be tested. According to the technical scheme provided by the embodiment of the disclosure, whether twin crystal defects exist in the monocrystalline silicon rod can be accurately judged, so that the twin crystal defects are different from naked eyes of process staff, judging errors are reduced, production efficiency is improved, and waste of productivity is reduced.
For the solution shown in fig. 3, in some possible embodiments, the determining whether the twin defect exists in the interior of the single crystal silicon rod to be measured based on the first distance, the first length, and the second length in the axial direction of the single crystal silicon rod to be measured of the first sample silicon wafer and the second sample silicon wafer includes:
acquiring a first corresponding relation between the first distance and a second distance of the first line defect and the second line defect on a (111) crystal face;
making a perpendicular line from a first end point on the first line defect to the second line defect to obtain an intersection point between the perpendicular line and the second line defect;
acquiring a third distance between a second end point on the second line defect, which is close to the intersection point, and the intersection point based on the first length and the second length;
acquiring a second corresponding relation between the second distance and the third distance;
acquiring a third corresponding relation corresponding to the first distance and the third distance based on the first corresponding relation and the second corresponding relation;
and when the third corresponding relation is equal to a preset value, judging that the twin crystal defect exists in the single crystal silicon rod to be detected.
As shown in fig. 5, in the implementation process, the first sample wafer W 1 is set above the second sample wafer W 2, and the first length of the first line defect on the first sample wafer is a 1, and the first length of the first line defect on the first sample wafer is a 2. In some examples, the (111) crystal plane is an equilateral triangle, so the angle α=60° in fig. 5.θ is the angle between the (111) crystal plane and the (100) crystal plane of 54.7 °. In order to determine whether a twin defect exists inside the single crystal silicon rod to be measured, a perpendicular line is drawn from a first end point of the first line defect to the second line defect in the embodiment of the present disclosure to obtain an intersection point of the perpendicular line and the second line defect a 2. The length x between the second end point of the intersection point close to the second line defect and the intersection point is the third distance.
As can be seen from fig. 5, the second distance l between the first line defect and the second line defect on the (111) plane is the hypotenuse and a right angle side of the same right triangle as the first distance h. The second distance l and the third distance x are two right-angle sides in the same right triangle. Therefore, based on the geometric relationship shown in fig. 5, the correspondence between the first distance h and the third distance x can be obtained.
For the above embodiment, in some examples, the acquiring the first correspondence between the first distance and the second distance of the first line defect and the second line defect on the (111) crystal plane includes:
The first correspondence between the first distance and the second distance of the first line defect and the second line defect on the (111) crystal plane is as follows:
sinθ=h/l
wherein h represents the first distance, l represents the second distance, and θ represents the angle between the (111) crystal plane and the (100) crystal plane.
The first correspondence between the second distance l and the first distance h of the first line defect and the second line defect on the (111) crystal plane can be obtained based on the geometric relationship shown in fig. 5, and is that sinθ=h/l.
For the above embodiment, in some examples, the obtaining, based on the first length and the second length, a third distance between a second end point on the second line defect near the intersection point and the intersection point includes:
obtaining a third distance between a second end point on the second line defect, which is close to the intersection point, and the intersection point according to the following steps:
Wherein L 1 represents the first length, L 2 represents the second length, and x represents the third distance.
Note that, when, for example, one end of the second line defect disappears at the edge, L 2 represents the measured length of the second line defect on the second sample silicon wafer, as shown in fig. 6.
For the above embodiment, in some examples, the obtaining the second correspondence between the second distance and the third distance includes:
the second correspondence between the second distance and the third distance is as follows:
tanα=l/x
wherein l represents the second distance, x represents the third distance, and α represents the inner angle of an equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located.
The second correspondence between the second distance and the third distance can be obtained based on the geometric relationship shown in fig. 5, where tan α=l/x.
For the above embodiment, in some examples, the obtaining a third correspondence corresponding to the first distance and the third distance based on the first correspondence and the second correspondence includes:
Based on the first correspondence and the second correspondence, a third correspondence corresponding to the first distance and the third distance is calculated as follows:
h=x×tanα×sinθ
Wherein h represents the first distance, l represents the second distance, θ represents an included angle between a (111) crystal plane and a (100) crystal plane, x represents the third distance, and α represents an interior angle of an equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located.
Based on the above explanation, a third correspondence relationship between the first distance and the third distance is calculated as h=x×tan α×sin θ. In some examples, α=60°, θ=54.7°, and thus a third correspondence relationship between the first distance and the third distance can be calculated as:
Therefore, when the first distance h between the two first sample silicon wafers and the second sample silicon wafer on the single crystal silicon rod to be detected and the third distance x meet the third corresponding relation, the existence of the twin crystal defect in the single crystal silicon rod to be detected can be judged.
For the solution shown in fig. 3, in some possible embodiments, the above detection method further includes:
Acquiring a fourth distance from the vertex of the equilateral triangle to the first line defect based on the equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located;
Acquiring a fifth distance from the vertex to the first sample silicon wafer based on the fourth distance and an included angle between the (111) crystal plane and the (100) crystal plane;
wherein the fifth distance is used for representing a position corresponding to a starting point of a twin crystal defect inside the single crystal silicon rod.
Specifically, the fourth distance l 0 from the starting point O of the twin defect inside the single crystal silicon rod to be measured to the first line defect can be calculated from the first length a 1 of the first line defect based on the geometric relationship shown in fig. 5 as: based on the calculated fourth distance l 0 and the included angle θ between the (111) crystal plane and the (100) crystal plane, a fifth distance h 0 from the starting point O of the twin crystal defect inside the single crystal silicon rod to be measured to the first sample silicon wafer W 1 can be calculated according to the geometric relationship shown in fig. 5, where h 0＝l0 ×sin θ is the ratio. Since α=60°, θ=54.7°, the fifth distance can be calculated
In some examples, as shown in FIG. 7, when both the first line defect a 1 on the first sample wafer W 1 and the second line defect a 2 on the second sample wafer W 2 are intact, or the first line defect a 1 on the first sample wafer W 1 is intact as shown in FIG. 8, but the second line defect a 2 on the second sample wafer W 2 is not intact, both of the above cases may be based onAnd calculating a fifth distance from a starting point O of the twin crystal defect in the single crystal silicon rod to be detected to the first sample silicon wafer W 1.
However, as shown in fig. 9, if the first line defect a 1 on the first sample wafer W 1 is incomplete, that is, the starting point of the twin defect inside the single crystal silicon rod to be tested is relatively close to the edge of the single crystal silicon rod to be tested, so that one end of the first line defect a 1 on the first sample wafer W 1 may disappear from the edge of the single crystal silicon rod to be tested as the (111) crystal plane extends, and the above technical scheme can still be utilizedJudging whether the twin crystal defect exists in the interior of the single crystal silicon rod to be detected or not, but not calculating the specific initial position of the twin crystal defect existing in the interior of the single crystal silicon rod to be detected, so that sampling is needed to be performed again at the upper position of the first sample silicon wafer W 1 to be detected until the complete first line defect is obtained, and then calculating the specific initial position of the twin crystal defect existing in the interior of the single crystal silicon rod to be detected.
The technical scheme of the present disclosure is described in detail below by means of specific examples.
Example 1
And sampling from the single crystal silicon rod to be detected by adopting a band saw or a wire cutting machine to obtain a first sample silicon wafer W 1 and a first sample silicon wafer W 2. Wherein, the distance between the first sample silicon wafer W 1 and the head of the single crystal silicon rod to be detected is 113.25cm, and the distance between the second sample silicon wafer W 2 and the head of the single crystal silicon rod to be detected is 119.98cm.
The first sample wafer W 1 and the first sample wafer W 2 are subjected to thinning treatment to remove a damaged layer caused by wire cutting so as to avoid affecting stress test. In some examples, the thinning described above may be selected from precision grinding or chemical polishing.
The line defects on the thinned first sample wafer W 1 and the thinned first sample wafer W 2 are measured by preferential corrosion microscopy, stress testing or differential interference microscopy to determine whether the line defects on the first sample wafer W 1 and the thinned first sample wafer W 2 are a line and are parallel to the <110> crystal orientation.
In this example 1, the presence of the line defects on the first sample wafer W 1 and the first sample wafer W 2 was observed by DIC, and as a result, as shown in FIG. 10, the first line defect a 1 on the first sample wafer W 1 and the second line defect a 2 on the first sample wafer W 2 were all intact, and the first line defect a 1 on the first sample wafer W 1 and the second line defect a 2 on the first sample wafer W 2 were all parallel to the <110> crystal orientation.
In the present example 1, it is found that the first length L 1 =61.22 mm of the first line defect a 1 and the first length L 2 = 157.3mm of the second line defect a 2 are calculated When twin crystal defects exist in the single crystal silicon rod to be measured,According to the fact that the distance from the first sample silicon wafer W 1 to the head of the single crystal silicon rod to be detected is 113.25cm and the distance from the second sample silicon wafer W 2 to the head of the single crystal silicon rod to be detected is 119.98cm, a first distance h= 119.98-113.25 =6.73 cm=67.3 mm between the first sample silicon wafer W 1 and the second sample silicon wafer W 2 is calculated. In the specific implementation process, the distance between the first sample silicon wafer W 1 and the head of the monocrystalline silicon rod to be detected and the distance between the second sample silicon wafer W 2 and the head of the monocrystalline silicon rod to be detected are manually measured, so that the twin crystal defect in the monocrystalline silicon rod to be detected can be obtained under the condition of error allowance.
Further, in example 1, according to the first sample wafer W 1 having a distance of 113.25cm from the head of the single crystal silicon rod to be measured and the first length L 1 =61.22 mm of the first line defect a 1, the theoretical calculation is performedThe starting point of the twin crystal defect in the single crystal silicon rod to be detected is located at the position 4.33cm above the first sample silicon wafer W 1, namely the distance from the starting point of the twin crystal defect in the single crystal silicon rod to be detected to the head of the single crystal silicon rod to be detected is 108.92cm.
In some examples, the position at a distance of 108.92cm from the head of the single crystal silicon rod to be measured is sampled again to obtain a plurality of sample silicon wafers, and after the processes such as grinding and polishing, the quality analysis is performed by using a high-resolution electron microscope to determine that the twin crystal defect is caused by graphite impurities.
Example 2
And sampling from the single crystal silicon rod to be detected by adopting a band saw or a wire cutting machine to obtain a first sample silicon wafer W 1 and a first sample silicon wafer W 2. Wherein, the distance between the first sample silicon wafer W 1 and the head of the single crystal silicon rod to be detected is 156.92cm, and the distance between the second sample silicon wafer W 2 and the head of the single crystal silicon rod to be detected is 170.15cm.
The first sample wafer W 1 and the first sample wafer W 2 are subjected to thinning treatment to remove a damaged layer caused by wire cutting so as to avoid affecting stress test. In some examples, the thinning described above may be selected from precision grinding or chemical polishing.
The line defects on the thinned first sample wafer W 1 and the thinned first sample wafer W 2 are measured by preferential corrosion microscopy, stress testing or differential interference microscopy to determine whether the line defects on the first sample wafer W 1 and the thinned first sample wafer W 2 are a line and are parallel to the <110> crystal orientation.
In this example 2, the presence of line defects on the first sample wafer W 1 and the first sample wafer W 2 was observed by DIC, and as a result, as shown in FIG. 11, the first line defect a 1 on the first sample wafer W 1 was complete, the second line defect a 2 on the first sample wafer W 2 had extended beyond the surface of the first sample wafer W 2, and both the first line defect a 1 on the first sample wafer W 1 and the second line defect a 2 on the first sample wafer W 2 were parallel to the <110> crystal orientation.
In embodiment 2, the right end point of the first line defect a 1 is perpendicular to the second line defect a 2, and the length of the intersection point and the right end point of the second line defect a 2 can be measured to be x=93.47 mm. When twin crystal defects exist in the single crystal silicon rod to be measured,According to the fact that the distance from the first sample silicon wafer W 1 to the head of the single crystal silicon rod to be detected is 156.92cm and the distance from the second sample silicon wafer W 2 to the head of the single crystal silicon rod to be detected is 170.15cm, a first distance h= 170.15-156.92 =13.23 cm=132.3 mm between the first sample silicon wafer W 1 and the second sample silicon wafer W 2 is calculated. In the specific implementation process, the distance between the first sample silicon wafer W 1 and the head of the monocrystalline silicon rod to be detected and the distance between the second sample silicon wafer W 2 and the head of the monocrystalline silicon rod to be detected are manually measured, so that the twin crystal defect in the monocrystalline silicon rod to be detected can be obtained under the condition of error allowance.
Further, in example 2, it is found from measurement that the theoretical calculation results in that the first length L 1 = 34.19mm of the first line defect a 1 on the first sample wafer W 1 The starting point of the twin crystal defect in the single crystal silicon rod to be detected is located at the position 2.42cm above the first sample silicon wafer W 1, namely the distance between the starting point of the twin crystal defect in the single crystal silicon rod to be detected and the head of the single crystal silicon rod to be detected is 154.5cm.
In some examples, the position at a distance of 154.5cm from the head of the single crystal silicon rod to be measured is sampled again to obtain a plurality of sample silicon wafers, and after the processes such as grinding and polishing, the cause of the twin crystal defect can be determined by mass analysis using a high-resolution electron microscope.
Based on the same inventive concept as the previous technical solution, referring to fig. 12, there is shown an above-mentioned detection system 120 provided by an embodiment of the present disclosure, including a sampling portion 1201, a measuring portion 1202 and a determining portion 1203, where,
The sampling part 1201 is used for sampling from a single crystal silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
The measuring part 1202 is configured to measure and obtain a first length corresponding to the first twin line and a second length corresponding to the second twin line when the crystal directions of the first twin line on the first sample silicon wafer and the second twin line on the second sample silicon wafer are parallel to the <110> crystal direction;
The determination unit 1203 is configured to determine whether or not a twin defect exists in the single crystal silicon rod to be measured based on the first distance, the first length, and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be measured.
Optionally, in some examples, the determining portion 1203 is configured to:
acquiring a first corresponding relation between the first distance and a second distance of the first line defect and the second line defect on a (111) crystal face;
making a perpendicular line from a first end point on the first line defect to the second line defect to obtain an intersection point between the perpendicular line and the second line defect;
acquiring a third distance between a second end point on the second line defect, which is close to the intersection point, and the intersection point based on the first length and the second length;
acquiring a second corresponding relation between the second distance and the third distance;
acquiring a third corresponding relation corresponding to the first distance and the third distance based on the first corresponding relation and the second corresponding relation;
and when the third corresponding relation is equal to a preset value, judging that the twin crystal defect exists in the single crystal silicon rod to be detected.
Optionally, in some examples, the determining portion 1203 is configured to:
The first correspondence between the first distance and the second distance of the first line defect and the second line defect on the (111) crystal plane is as follows:
sinθ=h/l
wherein h represents the first distance, l represents the second distance, and θ represents the angle between the (111) crystal plane and the (100) crystal plane.
Optionally, in some examples, the determining portion 1203 is configured to:
obtaining a third distance between a second end point on the second line defect, which is close to the intersection point, and the intersection point according to the following steps:
Wherein L 1 represents the first length, L 2 represents the second length, and x represents the third distance.
Optionally, in some examples, the determining portion 1203 is configured to:
the second correspondence between the second distance and the third distance is as follows:
tanα=l/x
wherein l represents the second distance, x represents the third distance, and α represents the inner angle of an equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located.
Optionally, in some examples, the determining portion 1203 is configured to:
Based on the first correspondence and the second correspondence, a third correspondence corresponding to the first distance and the third distance is calculated as follows:
h=x×tanα×sinθ
Wherein h represents the first distance, l represents the second distance, θ represents an included angle between a (111) crystal plane and a (100) crystal plane, x represents the third distance, and α represents an interior angle of an equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located.
Optionally, in some examples, as shown in fig. 13, the detection system 120 further includes a determining unit 1204, where the determining unit 1204 is configured to:
Acquiring a fourth distance from the vertex of the equilateral triangle to the first line defect based on the equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located;
Acquiring a fifth distance from the vertex to the first sample silicon wafer based on the fourth distance and an included angle between the (111) crystal plane and the (100) crystal plane;
wherein the fifth distance is used for representing a position corresponding to a starting point of a twin crystal defect inside the single crystal silicon rod.
It will be appreciated that in this embodiment, the "part" may be a part of a circuit, a part of a processor, a part of a program or software, etc., and of course may be a unit, or a module may be non-modular.
In addition, each component in the present embodiment may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units may be implemented in hardware or in software functional modules.
The above-described integrated units, if implemented in the form of software functional modules, may be stored in a computer-readable storage medium, if not sold or used as separate products, and based on such understanding, the technical solution of the present embodiment may be embodied essentially or partly in the form of a software product, or all or part of the technical solution may be embodied in a storage medium, where the computer software product includes several instructions to cause a computer device (which may be a personal computer, a server, or a network device, etc.) or processor to perform all or part of the steps of the above-described method of the present embodiment. The storage medium includes various media capable of storing program codes, such as a U disk, a removable hard disk, a Read Only Memory (ROM), a random access Memory (Random Access Memory, RAM), a magnetic disk, or an optical disk.
Accordingly, an embodiment of the present disclosure provides a computer storage medium storing a program for detecting a twin defect, where the program for detecting a twin defect is executed by at least one processor to perform the steps of the method for detecting a twin defect described in the foregoing technical solution.
Based on the above-mentioned twin defect detection system 120 and the computer storage medium, referring to fig. 14, which shows the hardware composition of the twin defect detection system 120, the twin defect detection system may include a band saw 141 or a wire saw 142, and a data processing subsystem 143, wherein,
The band saw 141 or the wire saw 142 is used for sampling from a single crystal silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
the data processing subsystem 143 is configured to:
When the crystal directions of the first line defect on the first sample silicon wafer and the second line defect on the second sample silicon wafer are parallel to the <110> crystal direction, respectively measuring to obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect, wherein the first length is smaller than the second length;
And judging whether twin crystal defects exist in the single crystal silicon rod to be detected based on the first distance, the first length and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected.
In particular, the data processing subsystem 143 described above may be implemented with a computing device as shown in FIG. 15, which may include one or more of a processor 1510 and a memory 1520 as shown in FIG. 15.
Optionally, the processor 1510 utilizes various interfaces and lines to connect various portions of the overall computing device, performing various functions of the computing device and processing data by executing or executing instructions, programs, code sets, or instruction sets stored in the memory 1520, and invoking data stored in the memory 1520. Alternatively, the processor 1510 may be implemented in hardware in at least one of digital signal Processing (DIGITAL SIGNAL Processing, DSP), field-Programmable gate array (Field-Programmable GATEARRAY, FPGA), programmable logic array (Programmable Logic Array, PLA). The processor 1510 may integrate one or a combination of several of a central processing unit (Central Processing Unit, CPU), an image processor (Graphics Processing Unit, GPU), a neural network processor (Neural-network Processing Unit, NPU), and baseband chips, etc. The CPU mainly processes an operating system, a user interface, an application program and the like, the GPU is used for rendering and drawing contents required to be displayed by the touch display screen, the NPU is used for realizing an artificial intelligence (ARTIFICIAL INTELLIGENCE, AI) function, and the baseband chip is used for processing wireless communication. It will be appreciated that the baseband chip may not be integrated into the processor 1510 and may be implemented by a single chip.
The Memory 1520 may include a random access Memory (Random Access Memory, RAM) or a Read-Only Memory (ROM). Optionally, the memory 1520 includes a non-transitory computer readable medium (non-transitory computer-readable storage medium). Memory 920 may be used to store instructions, programs, code, sets of codes, or instruction sets. The memory 1520 may include a stored program area that may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playing function, an image playing function, etc.), instructions for implementing the above various method embodiments, etc., and a stored data area that may store data created according to the use of the computing device, etc.
In addition, those skilled in the art will appreciate that the structure of the computing device shown in the above-described figures is not limiting of the computing device, and that the computing device may include more or fewer components than shown, or may combine certain components, or a different arrangement of components. For example, the computing device further includes a display screen, a camera component, a microphone, a speaker, a radio frequency circuit, an input unit, a sensor (such as an acceleration sensor, an angular velocity sensor, a light sensor, etc.), an audio circuit, a WiFi module, a power supply, a bluetooth module, etc., which are not described herein.
The technical schemes described in the embodiments of the present disclosure may be arbitrarily combined without any conflict.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the disclosure, and it is intended to cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (9)
1. A method for detecting a twin defect, the method comprising:
sampling from a monocrystalline silicon rod to be detected to obtain a first sample silicon wafer and a second sample silicon wafer;
when the crystal directions of a first line defect on the first sample silicon wafer and a second line defect on the second sample silicon wafer are parallel to a <110> crystal direction, respectively measuring to obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect, wherein the first length is smaller than the second length;
Judging whether twin crystal defects exist in the single crystal silicon rod to be detected or not based on a first distance, a first length and a second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected;
Wherein, based on the first distance, the first length and the second length of the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be tested, determining whether a twin crystal defect exists in the single crystal silicon rod to be tested includes:
acquiring a first corresponding relation between the first distance and a second distance of the first line defect and the second line defect on a (111) crystal face;
making a perpendicular from a first end point on the first line defect to the second line defect to obtain an intersection point between the perpendicular and the second line defect;
Acquiring a third distance between a second endpoint on the second line defect, which is close to the intersection point, and the intersection point based on the first length and the second length;
acquiring a second corresponding relation between the second distance and the third distance;
Acquiring a third corresponding relation corresponding to the first distance and the third distance based on the first corresponding relation and the second corresponding relation;
And when the third corresponding relation is equal to a preset value, judging that the twin crystal defect exists in the single crystal silicon rod to be detected.
2. The method according to claim 1, wherein the acquiring the first correspondence between the first distance and the second distance of the first line defect and the second line defect on the (111) crystal plane includes:
the first correspondence between the first distance and the second distance of the first line defect and the second line defect on the (111) crystal plane is as follows:
wherein h represents the first distance and l represents the second distance; the angle between the (111) crystal plane and the (100) crystal plane is represented.
3. The method according to claim 1, wherein the obtaining a third distance between a second end point on the second line defect near the intersection point and the intersection point based on the first length and the second length includes:
obtaining a third distance between a second endpoint on the second line defect near the intersection point and the intersection point according to the following formula:
Wherein L 1 represents the first length, L 2 represents the second length, and x represents the third distance.
4. The method according to claim 1, wherein the acquiring the second correspondence between the second distance and the third distance includes:
The second corresponding relation between the second distance and the third distance is shown as the following formula:
tanα=l/x
wherein l represents the second distance, x represents the third distance, and alpha represents the inner angle of an equilateral triangle corresponding to the (111) crystal plane where the first line defect and the second line defect are located.
5. The method according to claim 1, wherein the obtaining a third correspondence corresponding to the first distance and the third distance based on the first correspondence and the second correspondence includes:
Based on the first corresponding relation and the second corresponding relation, a third corresponding relation corresponding to the first distance and the third distance is calculated as follows:
wherein h represents the first distance and l represents the second distance; The included angle between the (111) crystal face and the (100) crystal face is represented, x represents the third distance, and alpha represents the internal angle of the equilateral triangle corresponding to the (111) crystal face where the first line defect and the second line defect are located.
6. The method of detection according to claim 1, wherein the method of detection further comprises:
Acquiring a fourth distance from the vertex of the equilateral triangle to the first line defect based on the equilateral triangle corresponding to the (111) crystal face where the first line defect and the second line defect are located;
Acquiring a fifth distance from the vertex to the first sample silicon wafer based on the fourth distance and an included angle between the (111) crystal plane and the (100) crystal plane;
wherein the fifth distance is used for representing a position corresponding to a starting point of a twin crystal defect inside the single crystal silicon rod.
7. A twin crystal defect detection system is characterized by comprising a sampling part, a measuring part and a judging part, wherein,
The sampling part is used for sampling from a monocrystalline silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
The measuring part is configured to respectively measure and obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect when the crystal directions of the first line defect on the first sample silicon wafer and the second line defect on the second sample silicon wafer are parallel to the <110> crystal directions;
the judging part is configured to judge whether twin crystal defects exist in the single crystal silicon rod to be detected or not based on a first distance between the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be detected, the first length and the second length;
Wherein the measurement section is configured to:
acquiring a first corresponding relation between the first distance and a second distance of the first line defect and the second line defect on a (111) crystal face;
making a perpendicular from a first end point on the first line defect to the second line defect to obtain an intersection point between the perpendicular and the second line defect;
Acquiring a third distance between a second endpoint on the second line defect, which is close to the intersection point, and the intersection point based on the first length and the second length;
acquiring a second corresponding relation between the second distance and the third distance;
Acquiring a third corresponding relation corresponding to the first distance and the third distance based on the first corresponding relation and the second corresponding relation;
And when the third corresponding relation is equal to a preset value, judging that the twin crystal defect exists in the single crystal silicon rod to be detected.
8. A twin crystal defect detection system is characterized by comprising a band saw or a wire cutting machine and a data processing subsystem, wherein,
The band saw or the wire cutting machine is used for sampling from a monocrystalline silicon rod to be tested to obtain a first sample silicon wafer and a second sample silicon wafer;
the data processing subsystem is configured to:
when the crystal directions of a first line defect on the first sample silicon wafer and a second line defect on the second sample silicon wafer are parallel to a <110> crystal direction, respectively measuring to obtain a first length corresponding to the first line defect and a second length corresponding to the second line defect, wherein the first length is smaller than the second length;
Determining whether a twin crystal defect exists in the single crystal silicon rod to be measured based on a first distance between the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be measured, the first length and the second length, wherein the determining whether the twin crystal defect exists in the single crystal silicon rod to be measured based on the first distance between the first sample silicon wafer and the second sample silicon wafer in the axial direction of the single crystal silicon rod to be measured, the first length and the second length comprises:
acquiring a first corresponding relation between the first distance and a second distance of the first line defect and the second line defect on a (111) crystal face;
making a perpendicular from a first end point on the first line defect to the second line defect to obtain an intersection point between the perpendicular and the second line defect;
Acquiring a third distance between a second endpoint on the second line defect, which is close to the intersection point, and the intersection point based on the first length and the second length;
acquiring a second corresponding relation between the second distance and the third distance;
Acquiring a third corresponding relation corresponding to the first distance and the third distance based on the first corresponding relation and the second corresponding relation;
And when the third corresponding relation is equal to a preset value, judging that the twin crystal defect exists in the single crystal silicon rod to be detected.
9. A computer storage medium, characterized in that the computer storage medium stores a detection program of a twin defect, the detection program of a twin defect being executed by at least one processor to perform the steps of the detection method of a twin defect according to any one of claims 1 to 6.
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