CN118086842B - Coating system for ion beam assisted deposition coating device - Google Patents

Abstract

The invention provides an ion beam assisted deposition coating device, which comprises: source system: the system comprises at least one group of coating systems and at least one group of etching systems, wherein the coating systems comprise ion sources, evaporation sources, laser sources or electron beams, and the etching systems comprise the ion sources; and (3) a vacuum system: providing a vacuum environment; and (3) a tape feeding system: winding and unwinding the strip; and (3) a control system: and under the action of the control system, the tape feeding system is used for winding and unwinding, the coating system is used for coating the tape in the vacuum environment and/or the etching system is used for etching the tape in the vacuum environment. The film coating and etching are simultaneously carried out on the former several belts, and the etching speed is higher than the film coating speed, so that the net deposition speed is very low, but due to the high etching speed, the deposited magnesium oxide can form excellent texture, the texture difference of two ends of the same belt material is ensured to be less than 10%, the critical current difference of two ends of the finally prepared superconducting belt material is less than 10%, and the film coating effect is further improved.

Description

Coating system for ion beam assisted deposition coating device

This application is a divisional application of the following original application:

Filing date of original application: July 27, 2023

Application number of the original application: 2023109352630

Title of the invention originally applied for: Ion beam assisted deposition coating device and coating method

Technical Field

The present invention relates to the technical field of superconducting tapes, and in particular to a coating system for an ion beam assisted deposition coating device.

Background Art

In 1986, researchers G. Bednorz and KA Müller at IBM's Zurich Laboratory discovered high-temperature superconductors in an experiment, which triggered a research boom and quickly pushed the critical temperature of the material beyond the liquid nitrogen temperature range. After more than 30 years of development, the development of high-temperature superconducting wires and tapes has become increasingly mature. During this period, people have successively developed the first generation of high-temperature superconducting commercial wires and tapes (1G-HTS) represented by BSCCO, including Bi-2212 ^[4] and Bi-2223, and the second generation of high-temperature superconducting commercial tapes (2G-HTS) represented by REBCO. Compared with the first generation of high-temperature superconducting tapes, the second generation of high-temperature superconducting tapes have many advantages, such as large current density, higher performance under external magnetic fields, and lower raw material costs.

At present, many countries in the world have successively carried out a large number of high-temperature superconducting high-power application research and engineering demonstration projects. The main application fields include the power field and the magnet field. The power field includes superconducting cables, superconducting current limiters, superconducting fans, superconducting transformers, superconducting energy storage, etc. The magnet field includes high-field magnets, nuclear magnetic resonance, superconducting induction heating, superconducting magnetic levitation, accelerators, nuclear fusion, etc.

Due to the weak connection of grain boundaries, it is difficult to prepare second-generation high-temperature superconducting tapes using the powder coating process of first-generation high-temperature superconducting tapes. High-performance REBCO film layers are highly dependent on the microstructure of biaxial texture. Only by overcoming the weak connection of grain boundaries through epitaxial growth on a biaxially textured substrate can high-quality REBCO film layers be prepared. Therefore, the second-generation high-temperature superconducting tapes currently generally adopt a thin film deposition process on a flexible substrate, which also makes REBCO tapes called coated conductors. A typical coated conductor includes a metal base tape, an isolation buffer layer, a superconducting layer and a protective layer. The entire technical route of the second-generation high-temperature superconducting tape is mainly determined by the biaxial weaving of the oxide isolation buffer layer, the epitaxial growth process of the superconducting layer and the strengthening treatment.

The buffer layer can not only block the diffusion of metal substrate elements and react with the superconducting layer, but also serve as a textured substrate for the epitaxial growth of the superconducting layer. This requires it to be dense, have good chemical stability, have a biaxial texture, and match the lattice structure of the superconducting layer well. At present, people have developed a variety of technical routes, including rolling assisted double textured substrate (RABiTS) technology, inclined substrate deposition (ISD) technology and ion beam assisted deposition (IBAD) technology.

IBAD-MgO is a good choice for the texture layer. However, in the actual production of REBCO long strips, there are still many problems:

1. The existing IBAD equipment has low efficiency and poor coating effect of the MgO layer.

2. During the running of a single strip, the speed fluctuates greatly in a certain section, resulting in unstable texture of the strip, affecting product performance.

3. Particles are easily attached to the pulley, which easily forms convex spots on the surface of the belt, causing the surrounding film layer to break and affect product performance.

4. The accumulation of friction between multiple strips and uneven force causes the strip to become stuck, resulting in unstable coating and affecting product performance.

Summary of the invention

In view of the defects in the prior art, an object of the present invention is to provide an ion beam assisted deposition coating device and a coating method.

An ion beam assisted deposition coating device provided according to the present invention includes: a source system: including at least one coating system and at least one etching system, the coating system includes an ion source, an evaporation source, a laser source or an electron beam, and the etching system includes an ion source; a vacuum system: providing a vacuum environment; a tape transport system: winding and unwinding a tape; a control system: under the action of the control system, the tape transport system winds and unwinds, the coating system coats the tape in the vacuum environment and/or the etching system etches the tape in the vacuum environment.

Preferably, it also includes a target seat and a cooling system, wherein the target seat is used to support the target material, and the target seat can be adjusted back and forth horizontally and perpendicularly to the direction of the strip movement; the cooling system cools the target material.

Preferably, it also includes a curved water cooling plate, which is arranged on the side of the strip away from the target material. The curved water cooling plate can be adjusted up and down in a horizontal direction perpendicular to the direction of strip movement, and the curved water cooling plate water-cools the strip in contact with the curved water cooling plate.

Preferably, it also includes a process gas circuit; the process gas circuit is integrated on the arc-shaped water-cooling plate, and one or more walkways parallel to the movement direction of the strip are arranged on the side of the arc-shaped water-cooling plate close to the strip, and an arc-shaped water-cooling plate gas circuit outlet is arranged on any of the walkways; or, the process gas circuit is arranged on the wall of the vacuum chamber; or, the process gas circuit is arranged between the target material and the arc-shaped water-cooling plate, and the process gas circuit does not interfere with coating and etching.

Preferably, the ion beam emitted by the coating system includes a focused beam or a parallel beam, and the ion beam emitted by the etching system includes a divergent beam or a parallel beam; the tape system includes n-track continuous tape, where n is the total number of tracks of the strip; the intersection of the center line of the ion beam emitted by the coating system and the target material corresponds to the last n-track strip area of the strip etching coating area, forming the strip coating area; the intersection of the center line of the ion beam emitted by the etching system and the strip is located in the first n-track strip area of the strip etching coating area, forming the strip etching area.

Preferably, the focal length of the focusing grid of the coating system is 10-50 cm, and the focal length of the divergent source of the etching system is at least 10 cm.

Preferably, the acute angle between the center line of the ion beam of the coating system and the target material is 45°±5°; the acute angle between the center line of the ion beam of the etching system and the strip material is 45°±5°.

Preferably, it also includes an ion source adjustment mechanism, which adjusts the tilt angle of the ion source of the coating system or the ion source of the etching system, and adjusts the height of the ion source of the coating system or the ion source of the etching system in the vertical direction.

Preferably, the ion source adjustment mechanism includes a clamping seat, an adjustment screw, an adjustment nut and a clamping block; the clamping seat allows the adjustment screw to vertically penetrate and move along the length direction of the adjustment screw, the adjustment nut is threadedly connected to the adjustment screw, and the adjustment nut is arranged below the clamping seat and contacts the clamping seat; the clamping seat allows the connecting shaft that is tightly connected to the ion source of the coating system or the ion source of the etching system to be rotatably installed, and the clamping block tightly connects the connecting shaft that is tightly connected to the ion source of the coating system or the ion source of the etching system to the clamping seat.

Preferably, the ion source adjustment mechanism includes a long adjustment screw, a short adjustment screw, a first fixed seat, a second fixed seat, a first adjustment nut and a second adjustment nut; the first fixed seat allows the long adjustment screw to penetrate vertically and rotate along the length direction of the long adjustment screw, the first adjustment nut is threadedly connected to the long adjustment screw, the first adjustment nut is connected to the first fixed seat, the first fixed seat allows the connecting shaft fastened to the ion source of the coating system or the ion source of the etching system to move spirally; the second fixed seat allows the short adjustment screw to penetrate vertically and rotate along the length direction of the short adjustment screw, the second adjustment nut is threadedly connected to On the short adjustment screw, the second adjustment nut is connected to the second fixed seat, and the second fixed seat allows the connecting shaft tightly connected to the coating system ion source or the etching system ion source to move spirally; the connecting shaft tightly connected to the upper side of the coating system ion source or the etching system ion source is connected to the first fixed seat, and the connecting shaft tightly connected to the lower side of the coating system ion source or the etching system ion source is connected to the second fixed seat; or, the connecting shaft tightly connected to the lower side of the coating system ion source or the etching system ion source is connected to the first fixed seat, and the connecting shaft tightly connected to the upper side of the coating system ion source or the etching system ion source is connected to the second fixed seat.

Preferably, the mesh diameter of the deceleration grid on both sides of the ion source of the coating system along the belt-walking direction is 1-1.8 times the mesh diameter of the deceleration grid in the middle.

Preferably, the coating system comprises at least three ion sources, and the RF coil voltages of the ion sources located on both sides of the tape running direction are greater than the RF coil voltage of the ion source in the middle.

Preferably, the grid of the ion source of the coating system includes an arc-shaped focusing molybdenum grid, an arc-shaped focusing graphite grid, a parallel molybdenum grid or a parallel graphite grid; the grid of the ion source of the etching system includes an arc-shaped diverging molybdenum grid, an arc-shaped diverging graphite grid, a parallel molybdenum grid or a parallel graphite grid.

Preferably, it also includes a reflective high-energy diffraction system, which includes an electron gun and a fluorescent screen. The electron beam emitted by the electron gun hits the surface of the strip at an incident angle of 2°-5°, and the fluorescent screen presents diffraction spots of the electron beam.

Preferably, it further comprises two baffles arranged opposite to each other, and a strip etching and coating area is formed between the two baffles;

The two baffles can be adjusted in a direction of approaching or moving away from each other, and the distance between the two baffles is within a range of 15 cm to 105 cm.

Preferably, the tape transport system comprises a roll-to-roll reciprocating structure, which comprises two sets of pulleys arranged opposite to each other, and the tape reciprocates around the pulleys of the two pulley sets in sequence; the roll-to-roll reciprocating structure allows for upward and downward adjustment in height direction.

Preferably, any pulley of any pulley assembly is independently rotatable, and any pulley is a single-sided pulley, and any pulley is made of ceramic material.

Preferably, the belt transport system further comprises an auxiliary power guide wheel for adjusting the belt tension, and the auxiliary power guide wheel is arranged in the middle track of the pulley group.

Preferably, the tape transport system also includes an independent unwinding and rewinding system, an encoding counter system and a tension detection system; the independent unwinding and rewinding system includes a motor, a reducer, a magnetic powder clutch, a magnetic fluid seal and a strip disk connected in sequence through an axis and a coupling, and the strip is wound around the strip disk; the encoding counter system includes an encoder, a magnetic fluid seal and a guide wheel connected in sequence through an axis and a coupling, and the strip passes around the guide wheel; the tension detection system includes a sensor and a guide wheel connected through an axis, and the strip passes around the guide wheel.

Preferably, the strip is tensioned on the guide wheel, and the middle portion of the guide wheel along the width direction of the strip is convex in an arc shape.

According to a coating method of an ion beam assisted deposition coating device provided by the present invention, the coating method comprises:

The coating system and the etching system respectively and simultaneously etch and coat the multiple strips in the etching area, and the etching speed of the etching system is less than or equal to the coating speed of the coating system;

The coating system coats multiple strips in the coating area;

The etching area is located at the front lane of the multi-lane strip relative to the coating area.

Preferably, the control system comprises a plurality of segmented PIDs to control the running speed of the strip, and the running speed fluctuation of the kilometer-level strip is less than 3%.

Compared with the prior art, the present invention has the following beneficial effects:

1. The present invention simultaneously performs coating and etching on the first few passes of the tape, and the etching speed is greater than the coating speed, so that the net deposition speed is very low. However, due to the high etching speed, the magnesium oxide deposited here will form an excellent texture, ensuring that the texture difference at both ends of the same root tape is less than 10%. The critical current difference at both ends of the finally prepared superconducting tape is less than 10%, thereby improving the coating effect.

2. The present invention realizes simultaneous operation on multiple strips through a roll-to-roll reciprocating structure, which helps to improve the coating efficiency of the equipment.

3. The present invention controls the tape running speed through segmented PID to ensure that the tape running speed fluctuation of kilometer-level tape is less than 3%, so that during the tape running process of a single tape, the speed fluctuations of all sections are stable, the tape texture is stable, and the current of the prepared superconducting tape will not fluctuate greatly, thereby improving the production quality.

4. The present invention adopts a single-sided ceramic pulley, which helps to reduce the occurrence of particles sticking to the pulley, helps to reduce the occurrence of coating being crushed during strip processing, and helps to improve production quality.

5. The present invention adopts a pulley group including multiple independent pulleys, so that the strip will not get stuck during movement due to the accumulation of friction force, resulting in unstable coating, which helps to improve production quality.

6. The present invention adopts a guide wheel with an arc-shaped protrusion, so that the strip is self-locked on the guide wheel when it is tensioned, thereby reducing the occurrence of strip curling and helping to improve production quality.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

FIG1 is a front schematic diagram of the overall structure of a coating device mainly embodying the present invention;

FIG2 is an axial schematic diagram of the overall structure of the coating device mainly embodied in the present invention;

FIG3 is a schematic diagram of the overall structure of the tape transport system mainly embodied in the present invention;

FIG4 is a schematic diagram of the overall structure of a roll-to-roll reciprocating structure mainly embodied in the present invention;

FIG5 is a schematic diagram of the overall structure of the encoder counter system mainly embodied in the present invention;

FIG6 is a schematic diagram of the overall structure of an independent rewinding and unwinding system mainly embodied in the present invention;

FIG7 is a schematic diagram of the overall structure of a tension detection system mainly embodied in the present invention;

FIG8 is a schematic diagram of the overall structure of the guide wheel of the present invention;

FIG9 is a schematic diagram of the side structure of the coating system mainly embodied in the present invention;

FIG10 is a schematic diagram of the top surface structure of the curved water-cooling plate mainly embodied in the present invention;

FIG11 is a schematic diagram of the bottom structure of the curved water-cooling plate mainly embodied in the present invention;

FIG12 is a schematic diagram showing the overall principle of the coating device according to the present invention;

FIG13 is a schematic diagram of the overall structure of an ion source adjustment mechanism of the present invention;

FIG14 is a schematic diagram of the overall structure of another ion source adjustment mechanism of the present invention. As shown in the figure:

Coating system 1 Control system 5

Etching system 2 Chamber 6

Vacuum system 3 Ear cavity 61

Tape transport system 4 Curved water cooling plate 7

Roll-to-roll reciprocating structure 41 Curved water cooling plate gas outlet 71

Pulley set 411 Target seat 9

Pulley 412 Target 91

Independent rewinding and unwinding system 42 Reflection high energy diffraction system 10

Motor 421 Clamping block 102

Reducer 422 Clamping seat 103

Magnetic powder clutch 423 Adjusting nut 104

Magnetic fluid seal 424 Mounting plate 105

Strip disc 425 Adjusting screw 106

Encoder counter system 43 Long adjustment screw 202

Encoder 432 First adjustment nut 203

Guide wheel 433 First fixed seat 204

Tension detection system 44 Second fixed seat 205

Sensor 441 Short adjustment screw 206

Auxiliary power guide wheel 45 base plate 207

Auxiliary motor system 46 Second adjustment nut 208

DETAILED DESCRIPTION

The present invention is described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but are not intended to limit the present invention in any form. It should be noted that, for those of ordinary skill in the art, several changes and improvements can also be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

As shown in Figures 1 and 2, an ion beam assisted deposition coating device provided according to the present invention includes a source system, a vacuum system 3, a tape transport system 4 and a control system 5. Specifically, the source system includes at least one coating system 1 and at least one etching system 2, the coating system 1 includes an ion source, an evaporation source, a laser source or an electron beam, and the etching system 2 includes an ion source. The vacuum system 3 provides a vacuum environment. The tape transport system 4 reels and unwinds the strip. Under the action of the control system 5, the tape transport system 4 reels and unwinds, the coating system 1 coats the strip in the vacuum environment and/or the etching system 2 etches the strip in the vacuum environment.

It should be emphasized that the tape system 4 of the present application reels and unwinds a single tape, and the single tape forms multiple continuous parallel tapes, the coating system 1 coats the multiple tapes in a vacuum environment and/or the etching system 2 etches the multiple tapes in a vacuum environment.

Specifically, the source system, vacuum system 3, tape transport system 4 and control system 5 are all installed on the machine body, which includes a cavity 6 and ear cavities 61 connected to both sides of the cavity 6. The cavity 6 is made of polished 304L stainless steel and is electropolished after welding. To facilitate the work in the cavity, the front of the cavity 6 is equipped with a hinged door and sealed with a fluororubber O-ring. To ensure the operation of the ion source, the back of the cavity 6 includes a large detachable nickel-plated aluminum plate. This aluminum plate is also sealed with an O-ring. Most of the other interfaces of the equipment are sealed with CF flanges.

The chamber 6 is equipped with two 250mm CF flange interfaces on both sides to connect the ear chambers 61 on both sides. The chamber 6 also includes interfaces that support all functions of evacuation, vacuum, vacuum gauge, base, two RF ion sources, RHEED and coating area observation window. The observation window of chamber 6 is equipped with a manual gate. The equipment also provides multi-purpose reserved interfaces. All interfaces are silver-plated standard parts.

The chamber 6 is fixed to a powder coated steel structure support frame and is equipped with two electrical rack sections, one on each side of the coating chamber. The support frame is equipped with casters and balance feet. The electrical rack also includes a set of balance feet to support the weight of the equipment. The electrical rack section accommodates all the electrical accessories required to operate the equipment, including the equipment's distribution box.

A pair of electro-polished 304L stainless steel ear cavities 61 are fixed on each electrical rack. The ear cavity 61 is also a square box type with a hinged door on the front to facilitate entry. Similarly, the cavity door is sealed with an O-ring. The ear cavity 61 is connected to the main cavity in the form of a 250mm CF flange short joint (about 190mm). Three free 70mm reserved interfaces are also installed on the ear cavity 61 to meet the customer's needs for installing through accessories. The ear cavity 61 is not equipped with functions such as evacuation and vacuum detection.

The vacuum system 3 of the present application can be evacuated using a low-temperature condensation pump. The pumping speed for air is 9000 liters/second, and the pumping speed for argon is 2500 liters/second. The argon volume of the pump is 2000 liters. A mechanical pump is used for rough extraction and condensation pump degassing. The condensation pump is separated from the cavity 6 by a VAT pneumatic valve. After the cavity 6 is connected to the ear cavity 61, the back vacuum can reach 5× ^10-7 torr. The equipment is equipped with an ion gauge and two resistance gauges. The ion gauge is installed on the cavity 6 to detect the back vacuum of the system. One of the resistance gauges ^is installed on the coating cavity and the other is installed on the rough extraction pipeline. Four mass flow meters are used to calibrate argon, two of which have a range of 50sccm and the other two are 20sccm. The amount of the mass flow meter that controls oxygen at the same time is called 50sccm and 20sccm. The mass flow meter for argon is used on the ion source and RF neutralizer. One oxygen line leads to the auxiliary source (50 sccm), and the other oxygen line leads to the coating area of the belt (20 sccm).

The vacuum system 3 uses a low vacuum pump and a high vacuum pump group. The low vacuum pump is pumped to 0.01-0.3 Torr. The high vacuum pump is turned on and the background vacuum is pumped to 1×10 ^-5 Torr-5.0×10 ^-7 Torr. The low vacuum pump uses a mechanical pump, a high vacuum pump, or one or more combinations thereof: a condensation pump, a molecular pump, and a diffusion pump. The vacuum degree of the membrane is 0.001 Torr-0.05 Torr. It should be further explained that the control system 3 can control the vacuum system to evacuate or break the vacuum.

As shown in Figures 3 and 4, the tape transport system 4 of the present application includes a roll-to-roll reciprocating structure 41, an independent reeling and winding system 42, an encoding counter system 43, and a tension detection system 44. The roll-to-roll reciprocating structure 41 is installed in the cavity 6 through a mounting frame, and the roll-to-roll reciprocating structure 41 is allowed to be adjusted up and down in the height direction in the cavity 6. The roll-to-roll reciprocating structure 41 includes two sets of pulley groups 411 that are arranged opposite to each other, and the tape reciprocates around the pulleys 412 of the two pulley groups 411 in turn, thereby forming multiple continuous parallel tape transports. This solves the problem that during the tape transport of a single tape, the speed fluctuation in a certain section becomes larger, causing the tape to have unstable texture in this section, and the superconducting tape finally prepared has a large fluctuation in the current in this section.

Any pulley 412 of any pulley set 411 is independently rotatable, and any pulley 412 is a single-sided pulley 412, and any pulley 412 is made of ceramic. By setting the pulley 412 on the pulley set 411 as an independent ceramic single-sided wheel, it is possible to reduce the occurrence of particles adhering to the pulley 412, reduce the occurrence of film breakage on the surface of the strip during processing, and thus reduce the occurrence of low points in the strip. In addition, the strip will not become stuck due to the accumulation of friction, resulting in unstable coating and affecting the performance of the strip.

The belt transport system 4 also includes an auxiliary power guide wheel 45 and an auxiliary motor system 46 for adjusting the belt tension. The auxiliary power guide wheel 45 is arranged in the middle track of the pulley group 411. The auxiliary motor system 46 drives the auxiliary power guide wheel 45 to adjust the belt tension to ensure that the belt can run stably.

The present application proposes a feasible implementation method, in which any pulley set 411 includes a pulley 412, and the spacing between the two pulley sets 411 is 750 mm. The spacing between the two pulley sets 411 is the distance between the wheel centers. When processing a strip with a diameter of 10 mm, a pulley 412 with a width of about 12 mm is used. The pulley 412 is designed to be able to travel a maximum of eleven belts, but the number of belts can be reduced as required. Each set of pulleys 412 is equipped with its own bearing, which allows the pulleys 412 to rotate independently and minimize friction. The gap between each belt is 2.2 mm. This longer and wider belt system 4 can ensure smooth belt movement and reduce belt distortion.

As shown in Fig. 5, Fig. 6, Fig. 7 and Fig. 8, the independent winding and unwinding system 42 includes a motor 421, a reducer 422, a magnetic powder clutch 423, a magnetic fluid seal 424 and a strip disk 425 connected in sequence through a shaft and a coupling, and the strip is wound around the strip disk 425. The encoder counter system 43 includes an encoder 432, a magnetic fluid seal 424 and a guide wheel 433 connected in sequence through a shaft and a coupling, and the strip is wound around the guide wheel 433. The tension detection system 44 includes a sensor 441 and a guide wheel 433 connected through a shaft, and the strip is wound around the guide wheel 433. More specifically, the strip is tensioned on the guide wheel 433, and the guide wheel 433 is arc-shaped and convex in the middle along the width direction of the strip. An independent reel-and-wind system 42, an encoder counter system 43 and a tension detection system 44 are respectively arranged in one group in the two ear cavities 61, and the strip entering the cavity 6 through the independent reel-and-wind system 42, the encoder counter system 43 and the tension detection system 44 is wound on the reel-to-reel reciprocating structure 41, thereby forming multiple continuous parallel tape paths.

A feasible embodiment is that the shaft allows the tape disc 425 to move forward and backward on it to meet the needs of multi-lane tape running and different positions of the tape. The tape disc 425 can also rotate to move the tape forward or backward. The ear cavity 61 contains a guide wheel with adjustable position to adjust the front and rear position of the tape to ensure that it is reasonably arranged in the coating area and the RHEED system. One of the guide wheels is equipped with an encoder 432 to provide feedback to the motor 421 to ensure uniform tape running. The tape running speed can be adjusted between 5 and 300m/h. Each independent reeling and unreeling system 42 is equipped with a programmable clutch, and the tape tension can be adjusted by the clutch. The independent reeling and unreeling systems 42 in the two cavities are designed to complete the reeling of the coated tape by tension. The inner shaft of the independent reeling and unreeling system 42 allows the tape disc 425 to move 5cm forward and backward to reel and unreel. The device provides a total of eight tape reels. In order to store the tape to the greatest extent, the inner diameter of the tape reel is 100mm. The tape reel can handle 2m thick tapes with lengths exceeding 1km.

As shown in Figures 9, 10 and 11, further, a curved water-cooling plate 7 is installed in the cavity 6. The curved water-cooling plate 7 is arranged on the back side of the coated surface of the strip. The curved water-cooling plate 7 can be adjusted up and down in a horizontal direction perpendicular to the direction of movement of the strip. The curved water-cooling plate 7 water-cools the strip in contact with the curved water-cooling plate 7.

A feasible implementation is: the curved water-cooling plate 7 can be a 304L SS plate of about 450 mm long and 190.5 mm wide, the ROC of the curved water-cooling plate 7 is about 508 cm, and a water channel is integrated in the curved water-cooling plate 7 to ensure cooling of the strip.

For the installation of the arc-shaped water-cooled plate 7, a metal frame can be used to hang the arc-shaped water-cooled plate 7 on the top wall of the cavity 6. The present application preferably uses an adjustable telescopic rod connected to each of the four corners of the arc-shaped water-cooled plate 7 to hang the arc-shaped water-cooled plate 7 on the top wall of the cavity 6. The adjustable telescopic rod of the present application can be replaced by any structure that can be adjusted in the vertical direction in the prior art. The two pulley groups 411 are respectively installed on the two opposite side walls of the cavity 6 through the structure that can be adjusted in the vertical direction in the prior art, so that the relative distance between the arc-shaped water-cooled plate 7 and the strip can be adjusted, and then the friction between the arc-shaped water-cooled plate 7 and the strip can be adjusted.

It also includes two baffles that are arranged opposite to each other, and a strip etching coating area is formed between the two baffles. The two baffles are respectively arranged on both sides of the arc-shaped water-cooling plate 7, and the two baffles are allowed to be adjusted in the direction of approaching or moving away from each other, and the distance between the two baffles includes 15cm-105cm. The baffle cannot be installed on the side of the coating area, that is, parallel to the tape running direction, otherwise it will block the normal operation of the RHEED system. The baffle protects the belt moving between the two ear cavities 61 from being contaminated by the coating material outside the coating area. A set of independent baffles is also provided and installed on the pulley 412 and the top of the pulley 412 to prevent contamination of the coating material.

It also includes a process gas path, which is integrated on the curved water-cooling plate 7. One or more walkways parallel to the moving direction of the strip are arranged on the side of the curved water-cooling plate 7 close to the strip. Each walkway is provided with a curved water-cooling plate gas path outlet 71. The curved water-cooling plate 7 has an air inlet, which allows oxygen to enter and leak out from the curved water-cooling plate gas path outlet 71 directly contacting each strip. When no strip passes through a certain strip, the curved water-cooling plate gas path outlet 71 can also be sealed to prevent oxygen from leaking out.

Another feasible process gas path is: the process gas path is arranged on the wall of the vacuum chamber.

Another feasible process gas path is: the process gas path is arranged between the target material 91 and the arc-shaped water-cooling plate 7, and the process gas path does not interfere with the coating and etching.

As shown in FIG12 , a target holder 9 and a cooling system are also included. The target holder 9 is used to support a target material 91. The target holder 9 can be adjusted forward and backward in a horizontal direction perpendicular to the direction in which the strip moves. The cooling system cools the target material 91. The target holder 9 is arranged below the strip. The target holder 9 is installed in the cavity 6 by a frame, and the frame allows the target holder 9 to be adjusted forward and backward in a horizontal direction perpendicular to the direction in which the strip moves.

Furthermore, the ion beam emitted by the coating system 1 includes a focused beam or a parallel beam, and the ion beam emitted by the etching system 2 includes a divergent beam or a parallel beam. The tape transport system 4 includes n continuous tape transports, where n is the total number of tapes. The intersection of the center line of the ion beam emitted by the coating system 1 and the target material 91 corresponds to the n-track strip area in the last half of the strip etching coating area, forming a strip coating area. The intersection of the center line of the ion beam emitted by the etching system 2 and the strip is located in the n-track strip area in the first half of the strip etching coating area, forming a strip etching area. The present application provides a feasible implementation method in which the value of n is eleven.

Specifically, the coating system 1 and etching system 2 of the present application are preferably ion sources.

The ion source of the coating system 1 includes a sputtering ion source, a sputtering neutralization source and a sputtering source power supply system. The sputtering ion source generates a sputtering ion beam, the sputtering neutralization source provides electrons for the sputtering ion beam, and the sputtering source power supply system controls the sputtering ion source. The sputtering ion source includes a sputtering ion source grid, a sputtering ion source discharge chamber, a sputtering ion source radio frequency coil, a sputtering ion source shell, and a sputtering ion source gas needle. The sputtering ion source grid, the sputtering ion source discharge chamber, the sputtering ion source radio frequency coil and the sputtering ion source gas needle are all installed in the sputtering ion source shell. The sputtering ion source gas needle penetrates the sputtering ion source radio frequency coil into the sputtering ion source discharge chamber, and the sputtering ion source grid is arranged on the side of the sputtering ion source discharge chamber away from the sputtering ion source gas needle. The sputtering ion source grid includes a sputtering ion source shielding grid, a sputtering ion source acceleration grid and a sputtering ion source deceleration grid which are sequentially arranged from close to the sputtering ion source discharge chamber to away from the sputtering ion source discharge chamber.

The ion source of the etching system 2 includes an auxiliary ion source, an auxiliary neutralization source and an auxiliary source power supply system. The auxiliary ion source generates an auxiliary ion beam, the auxiliary neutralization source provides electrons for the auxiliary ion beam, and the auxiliary source power supply system controls the auxiliary ion source. The auxiliary ion source includes an auxiliary ion source grid, an auxiliary ion source discharge chamber, an auxiliary ion source radio frequency coil, an auxiliary ion source shell, and an auxiliary ion source gas needle, and the auxiliary ion source grid, the auxiliary ion source discharge chamber, the auxiliary ion source radio frequency coil and the auxiliary ion source gas needle are all installed on the auxiliary ion source shell. The auxiliary ion source gas needle penetrates into the auxiliary ion source discharge chamber through the auxiliary ion source radio frequency coil, and the auxiliary ion source grid is arranged on the side of the auxiliary ion source discharge chamber away from the auxiliary ion source gas needle. The auxiliary ion source grid includes an auxiliary ion source shielding grid, an auxiliary ion source acceleration grid and an auxiliary ion source deceleration grid which are sequentially arranged from close to the auxiliary ion source discharge chamber to away from the auxiliary ion source discharge chamber.

Furthermore, the focal length of the focusing grid of the coating system 1 is 10-50 cm, and the focal length of the diverging source of the etching system 2 is at least 10 cm. The angle between the acute angle of the center line of the ion beam of the coating system 1 and the target material 91 is 45°±5°. The angle between the acute angle of the center line of the ion beam of the etching system 2 and the strip is 45°±5°. The grid of the ion source of the coating system 1 includes an arc-shaped focusing molybdenum grid, an arc-shaped focusing graphite grid, a parallel molybdenum grid or a parallel graphite grid. The grid of the ion source of the etching system 2 includes an arc-shaped diverging molybdenum grid, an arc-shaped diverging graphite grid, a parallel molybdenum grid or a parallel graphite grid.

More specifically, it also includes an ion source adjustment mechanism, which adjusts the tilt angle of the ion source of the coating system 1 or the ion source of the etching system 2, and adjusts the vertical height of the ion source of the coating system 1 or the ion source of the etching system 2. The ion source adjustment mechanism is provided on both sides of the ion source of the coating system 1 and the ion source of the etching system 2, respectively.

As shown in FIG13 , a feasible implementation is that the ion source adjustment mechanism includes a clamping seat 103, an adjustment screw 106, an adjustment nut 104, a clamping block 102, and a mounting plate 105. The clamping seat 103 allows the adjustment screw 106 to vertically penetrate and move along the length direction of the adjustment screw 106. The bottom of the adjustment screw 106 is fastened to the mounting plate 105. The adjustment nut 104 is threadedly connected to the adjustment screw 106, and the adjustment nut 104 is arranged below the clamping seat 103 and in contact with the clamping seat 103. The clamping seat 103 allows the connecting shaft fastened to the ion source of the coating system 1 or the ion source of the etching system 2 to be rotatably installed, and the clamping block 102 fastens the connecting shaft fastened to the ion source of the coating system 1 or the ion source of the etching system 2 to the clamping seat 103.

As shown in FIG14 , another feasible implementation is that the ion source adjustment mechanism includes a long adjustment screw 202, a short adjustment screw 206, a first fixing seat 204, a second fixing seat 205, a first adjustment nut 203, a second adjustment nut 208 and a base 207. The first fixing seat 204 allows the long adjustment screw 202 to vertically penetrate and rotate and move along the length direction of the long adjustment screw 202, the bottom of the long adjustment screw 202 is fastened and installed on the base 207, the first adjustment nut 203 is threadedly connected to the long adjustment screw 202, and the first adjustment nut 203 is connected to the first fixing seat 204, and the first fixing seat 204 allows the connecting shaft fastened to the ion source of the coating system 1 or the ion source of the etching system 2 to move spirally. The second fixing seat 205 allows the short adjustment screw 206 to vertically penetrate and rotate along the length direction of the short adjustment screw 206. The bottom of the short adjustment screw 206 is fastened and installed on the base 207. The second adjustment nut 208 is threadedly connected to the short adjustment screw 206. The second adjustment nut 208 is connected to the second fixing seat 205. The second fixing seat 205 allows the connecting shaft fastened to the ion source of the coating system 1 or the ion source of the etching system 2 to move spirally. The connecting shaft fastened to the upper side of the ion source of the coating system 1 or the ion source of the etching system 2 is connected to the first fixing seat 204, and the connecting shaft fastened to the lower side of the ion source of the coating system 1 or the ion source of the etching system 2 is connected to the second fixing seat 205. Or, the connecting shaft fastened to the lower side of the ion source of the coating system 1 or the ion source of the etching system 2 is connected to the first fixing seat 204, and the connecting shaft fastened to the upper side of the ion source of the coating system 1 or the ion source of the etching system 2 is connected to the second fixing seat 205.

It should be noted that the mesh diameter of the deceleration grid on both sides of the ion source of the coating system 1 along the belt-walking direction is 1-1.8 times the mesh diameter of the deceleration grid in the middle.

Another preferred embodiment is that the coating system 1 comprises at least three ion sources, and the RF coil voltages of the ion sources on both sides of the tape running direction are greater than the RF coil voltage of the ion source in the middle.

It also includes a reflection high-energy diffraction system 10, which includes an electron gun and a fluorescent screen. The electron beam emitted by the electron gun hits the surface of the strip at an incident angle of 2°-5°, and the fluorescent screen shows diffraction spots of the electron beam.

The technical solution of this application is further described as follows:

Acceleration voltage affects the divergence of the ion beam. Accelerator voltages exceeding that which minimizes the accelerator current result in beam divergence. Increasing beam divergence by operating at elevated accelerator voltages depends on the specific application. High beam current capabilities at moderate accelerator system voltages require closely spaced screens and accelerator grids, both with many small holes. In particular, maintaining small uniform spacing and accurately aligning the apertures requires mechanically and thermally stable grids. Veeco uses precision machined disc-shaped metal grids that achieve stability over a wide range of temperatures. The high performance design of the grid system allows current densities up to 2.0 mA/cm2 at 1000 eV ion energies and up to 0.5 mA/cm2 at 100 eV ion energies. Neutralizers provide electrons for reliability, ensuring discharge of the ion source at low pressures; neutralizing the charge of the directed ion beam in space; and preventing the potential to the target and baseband from being destroyed. Neutralizers are available as plasma neutralizers and RF neutralizers. Considering that the life of the radio frequency neutralizer greatly exceeds the life of the plasma neutralizer, the radio frequency neutralizer is preferred.

As a result of the low potential and very high mobility of the neutralizer electrons, the use of a high precision neutralizer is not an option. The neutralizer electrons and ion beam are roughly equal, ensuring that the sputtering target and substrate, even though insulators, are stable at a few volts above the equipment ground potential. The neutralizer emission current is 125% to 200% of the beam current. The neutralizer can be located at the periphery of the ion beam, eliminating neutralizer ion impact damage and forward ejection contamination problems.

The ion source of the present application has vacuum requirements: for each ion source and neutralizer, the vacuum pump system should be able to maintain a process gas chamber pressure below 6.7×10-2Pa (5×10-4Torr), with a gas load of 10 to 20sccm of argon. An ion beam source operating in a process chamber that cannot maintain this pressure may cause electrical breakdown between high voltage leads or in the area between the RF coil and the source shield.

Ion source operation at pressures above 6.7×10-2Pa results in erosion of the downstream accelerator grid as a result of sputtering from charge exchange ions. Charge exchange ion density and sputtering increase rapidly as pressure is raised above 6.7×10-2Pa. These effects should be minimized when operating at pressures below 2.7×10-2Pa (2×10-4Torr).

The ion source is designed to operate with argon; it will also work with other inert gases. Process grade gases are recommended. Oxygen and nitrogen can be used with molybdenum grids only. Each ion source and neutralizer requires a separate dial gauge valve or electronic flow controller in the gas supply line.

The gas lines to the ion source contain high-pressure gas isolator assemblies to separate the source high potential from the gas flow system. This allows all exposed gas lines to be run at equipment ground potential.

The RF coil, power feedthrough, and shield of the ion source are all water cooled. Two 1.8 m (6 ft) lengths of 1/4" O.D. PFA tubing are used for the water supply. The additional length of PFA tubing also provides electrical isolation between the feedthrough and the water supply. A flow switch installed at the supply end of the cooling water line should also be electrically connected to the power interlock cable to prevent loss of coolant.

The 6x22cm ion source uses a filamentless RF design and is suitable for deposition, assisted deposition, etching and chemically assisted etching. It can operate in argon and other inert gases and oxygen, where the gas is introduced through a quartz discharge chamber with a gas isolation device. The 13.56MHz RF power supply ionizes the gas in the ion beam discharge chamber by inductively coupled discharge. A portion of the ions generated in the discharge chamber reaches the two grids on the accelerator and is concentrated on the front of the grid and accelerated by the grid accelerator. The accelerated ions form a directional single-energy ion beam.

The neutralizer provides electrons for the ion beam. The neutralizing electrons are distributed in the conductive plasma beam, providing a uniform potential energy background for most experimental conditions. In addition to the role of neutralizing the ion beam current, the neutralizer also acts as an electron source to ensure stability and discharge ignition of the ion source under low pressure conditions.

The discharge chamber is filled with a conductive plasma consisting of electrons and ions in equal numbers, against a background of neutral atoms. Electrons are small in mass and high in velocity, so they hit the surfaces of the discharge chamber more quickly. The plasma in the discharge chamber has a +25V self-bias relative to most surfaces. The power supply controller compensates for this 25V self-bias, so the displayed beam voltage is equal to the actual ion beam voltage. The ion beam current is proportional to the density of the discharge chamber plasma. Because the plasma density is proportional to the input energy, the ion beam current is adjusted to the filter range of the grid based on the ion energy or acceleration voltage. Because the discharge is filamentless, the ion source can operate in a variety of gas environments such as pure oxygen, and the maintenance cycle can generally reach hundreds of hours.

For the acceleration system: ions will be neutralized into a neutral particle when they collide with any solid surface and ejected from the surface. These particles will eventually be pumped away by the pump. Particles enter the acceleration system through the attraction of a negatively-voltaged grid. The grid extracts ions from the plasma. These individual ion beams pass through the acceleration system to form a directional ion beam with concentrated energy bandwidth. The final directional energy of the ion beam is equivalent to the potential difference between the ions in the discharge chamber and the equipment environment.

The power supply displays the ion beam voltage Vbeam, which is the grid voltage plus the plasma voltage. Although the final voltage is Vbeam, the total voltage on the grid as the ions approach the accelerator is equal to the applied ion beam voltage plus the negative accelerating voltage.

Vtotal＝|Vbeam|+|Vaccel|

When ions pass through the grid, they have a negative voltage Vaccel compared to the environment. When ions pass through the accelerating grid, the negative bias of the grid accelerates the ions, but the ions are still positively charged. When approaching the last grid (GND), the ions reach a region with higher energy than the accelerating grid. Therefore, the positive ions are repelled and the ions are appropriately decelerated through the grid. If there is no negative potential provided by the accelerating voltage (Vaccel is a negative voltage), the electrons produced by the neutralizer will enter the acceleration system, thereby affecting the current of the ion beam. The acceleration/deceleration process can increase the current of the ion beam. The voltage after the ion beam current passes through the acceleration system becomes (Vtotal)3/2. The ion beam current is increased by applying an accelerating voltage of Vbeam. When Vaccel=0, Vtotal=Vbeam, and the ion beam current decreases. It is important to note that when the ion beam energy is low, a larger accelerating voltage is required to increase the ion beam energy. For a beam current with a certain current voltage, an accelerating voltage can be found that minimizes its divergence. The maximum collimation point of a single beamlet corresponds to the minimum value of the observed accelerator drain current.

For RF neutralizers, ion beams and other plasma sources used for material processing need to minimize charging issues on the substrate surface by providing electrons. These electron sources are often referred to as electron sources. Unlike filament or hollow cathode neutralizers, RF neutralizers use RF fields to generate electrons and ions, rather than thermionic emitters. In order for an RF neutralizer to emit electrons, an inert gas (usually argon) is introduced into a small discharge chamber. The gas is ionized by the field induced by an RF coil surrounding the discharge chamber. The ionized gas, or plasma, contains electrons and ions. This discharge is further maintained by an ion collector and an electron collector. The collector/collector discharge can be biased to emit electrons. The emission current from an RF neutralizer is the net electron current Ie extracted from the ion collector and electron collector in the discharge. RF neutralizer parameters include electromagnetic emission current, RF forward and RF reflected power. Emission current, which is the number of electrons extracted from the ion collector and electron collector discharge. RF forward power and reflected power represent the RF power level sent to the matching network/RF coil circuit. The RF coil and matching network ionize the gas in the discharge chamber. The RF coil is wrapped around the discharge chamber and connected to the ground. The RFN is installed 9 cm from the ion source and ensures that its plasma does not damage other components in the chamber and that the ion source beam does not damage the RF neutralization source.

For the RF ion source, two 6×22 cm linear ion sources are provided for the coating process. One ion source contains a molybdenum focusing grid for ion beam sputtering. This ion source and its associated RF neutralizer use argon gas to achieve the sputtering process. The ion source is placed in a position that allows the emitted ions to form a 45 degree angle with the normal direction of the sputtering target. It is provided that the focal length of the ion source is 18 cm and the working distance is 32 cm. The position of the ion source is adjustable, and the working distance can be adjusted by +/- 2.5 cm, which can be achieved by adjusting the position of the ion source and the target. The coating length of the strip is 10 to 30 cm. If the length of the coating area is increased, the uniformity of IBAD will deteriorate. The length of the coating area depends on the number of strips, which can be up to 11. The width of the coating area can be adjusted by moving the baffle 8, which cannot appear in the position to block the RHEED electron beam as mentioned above. The second RF ion source is equipped with a set of diverging molybdenum grids. The ion source is pointed at the center of the tape at a 45 degree angle from the normal and provides texture to the sputtered material. The ion source is placed 30 cm away from the tape. The ion source can use oxygen and argon as working gases, while the neutralizer can only use argon. The power supplies for both ion sources are fixed to the frame and are equipped with the required RF and water and RF power for the neutralizer.

For the water-cooled target holder 9, an adjustable water-cooled target holder 9 is installed at the bottom of the chamber 6. This target holder 9 provides complete water cooling for the backing plate of the target 91. The size of the target 91 is 30×20×1.2 cm. Each target 91 is bound to a slightly larger OFHC copper backing plate, which is bolted to the target holder 9. Water is in direct contact with the back of the copper backing plate of all targets 91 (whether metal or ceramic). The position of the target holder 9 can be manually adjusted in the up and down and front and back directions within a range of ±2.5 cm. This improves the ability of the equipment to adjust the target-substrate distance to a certain extent. Magnesium oxide target: 30×20×1.2 cm, purity 99.99%, bound to the copper backing plate. In order to minimize the leakage of cooling water into the chamber 6, the water-cooled version will be equipped with two O-rings. The gap between the two O-rings will be differentially evacuated to ensure that water does not leak into the chamber 6. When changing targets, the air blowing system can be used to blow water out of the cooling module, making the target changing process simple and clean.

The RHEED electron gun for the reflected high energy electron diffraction system with a 10:35 keV electron current is mounted on the rear panel of chamber 6. The electron gun includes a differential pump for the first stage, a maintenance tool and a power supply system, as well as an energy compensation system to counteract the earth's magnetic field. The electron gun is also equipped with beam blanking, beam rocking, PC connection, a recessed screen with viewing window and shutter, and three spare filaments. Considering that the electron gun works in an oxygen environment, the system also includes a microprocessor control unit for the electron beam current to ensure that the electron beam current remains constant even after long operation. RHEED is equipped with a k-Space professional data acquisition system, which includes a sensitive CCD camera with FireWire data cable, cables and software. A RHEED-adapted camera mount and a desktop computer are included. The system includes a vacuum pump assembly with a turbo pump and a dry fore pump. A VAT pneumatic valve is also provided to protect the RHEED electron gun when chamber 6 is vented.

The present invention also provides a coating method for an ion beam assisted deposition coating device, the coating method comprising: a coating system 1 and an etching system 2 both etch and coat multiple strips in an etching area at the same time, and the etching speed of the etching system 2 is less than or equal to the coating speed of the coating system 1. The coating system 1 coats multiple strips in the coating area. The etching area is located in the front walkway of the multiple strips relative to the coating area.

Specifically, the ion beam generated by the ion source of the coating system 1 bombards the target material 91. After being bombarded, the target material 91 produces fine powder that floats around. Part of the powder falls onto the surface of the strip at a certain distance from the target material 91, forming a thin film on the surface of the strip. At the same time, the ion source of the etching system 2 flattens the protruding surface.

In the working area, the change of deposition rate is symmetrically distributed with the center of the ion beam of coating system 1 as the center. The change of the ion beam of etching system 2 is asymmetrical. What's worse, the change rates of the two are also different. Due to the divergence of the ion source of etching system 2, the decrease of etching rate from the center to the outside is more gentle than that of deposition rate, which makes it difficult to form a uniform coating area in a large area.

In the working area, there are areas with high etching/deposition ratios (hereinafter referred to as ED ratios), and even in some areas, the etching rate is greater than the deposition rate. In these areas, the net deposition rate is very low, but due to the high etching rate, the magnesium oxide deposited here will form an excellent texture. These high ED ratio areas, especially those with an ED ratio less than zero (i.e., etching is stronger than deposition), play a vital role in the formation of biaxial texture of magnesium oxide.

By coating and etching the first few strips at the same time, and the etching speed is lower than the coating speed, the net deposition speed is very low, but due to the high etching speed, the magnesium oxide deposited here will form an excellent texture. In the area where etching is stronger than deposition, it plays a vital role in the formation of biaxial texture of magnesium oxide. The control system 5 includes multiple segmented PIDs to control the strip speed, and the speed fluctuation of the kilometer-level strip is less than 3%. By performing segmented PID control on the strip system 4, the stability of the strip is improved.

Those skilled in the art know that, in addition to realizing the system and its various devices, modules, and units provided by the present invention in a purely computer-readable program code, it is entirely possible to realize the same functions in the form of logic gates, switches, application-specific integrated circuits, programmable logic controllers, and embedded microcontrollers by logically programming the method steps. Therefore, the system and its various devices, modules, and units provided by the present invention can be considered as a hardware component, and the devices, modules, and units included therein for realizing various functions can also be regarded as structures within the hardware component; the devices, modules, and units for realizing various functions can also be regarded as both software modules for realizing the method and structures within the hardware component.

In the description of the present application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art can make various changes or modifications within the scope of the claims, which does not affect the essence of the present invention. In the absence of conflict, the embodiments of the present application and the features in the embodiments can be combined with each other at will.

Claims (7)

1. A coating system for an ion beam assisted deposition coating device, comprising: Source system: including at least one coating system and at least one etching system, wherein the coating system includes an ion source, and the etching system includes an ion source; Vacuum system: provide vacuum environment; Belt conveying system: reeling and unreeling the belt material; Control system: under the control of the control system, the tape transport system reels in and unwinds, the coating system coats the tape in the vacuum environment, and the etching system etches the tape in the vacuum environment; The mesh diameter of the deceleration grids on both sides of the ion source of the coating system along the belt-walking direction is 1-1.8 times the mesh diameter of the deceleration grid in the middle; The ion beam emitted by the coating system includes a focused beam or a parallel beam, and the ion beam emitted by the etching system includes a divergent beam or a parallel beam. The focal length of the focusing grid of the coating system is 10-50 cm. The acute angle between the center line of the ion beam of the coating system and the target material is 45°±5°; the acute angle between the center line of the ion beam of the etching system and the strip is 45°±5°. The coating system includes at least three ion sources, and the RF coil voltages of the ion sources on both sides of the strip walking direction are greater than the RF coil voltage of the ion source in the middle. The coating system and the etching system respectively and simultaneously etch and coat multiple strips in the etching area. The coating system coats multiple strips in the coating area, and the etching area is located at the front walkway of the multiple strips relative to the coating area. The control system includes multiple segmented PID controls to control the strip running speed, and the speed fluctuation of kilometer-level strips is less than 3%. 2. The coating system for an ion beam assisted deposition coating device according to claim 1, characterized in that it also includes a target seat and a cooling system, wherein the target seat is used to support the target material, and the target seat can be adjusted forward and backward in a horizontal direction perpendicular to the direction of the strip movement; The cooling system cools the target material. 3. The coating system for an ion beam assisted deposition coating device according to claim 1, characterized in that the grid of the ion source of the coating system comprises an arc-shaped focusing molybdenum grid, an arc-shaped focusing graphite grid, a parallel molybdenum grid or a parallel graphite grid; The grid of the ion source of the etching system includes an arc-shaped divergent molybdenum grid, an arc-shaped divergent graphite grid, a parallel molybdenum grid or a parallel graphite grid. 4. The coating system for an ion beam assisted deposition coating device as described in claim 1 is characterized in that it also includes a reflective high-energy diffraction system, wherein the reflective high-energy diffraction system includes an electron gun and a fluorescent screen, the electron beam emitted by the electron gun hits the surface of the strip at an incident angle of 2°-5°, and the fluorescent screen presents diffraction spots of the electron beam. 5. The coating system for an ion beam assisted deposition coating device according to claim 1, characterized in that it also comprises two baffles arranged opposite to each other, and a strip etching coating area is formed between the two baffles; The two baffles can be adjusted in a direction of approaching or moving away from each other, and the distance between the two baffles is within a range of 15 cm to 105 cm. 6. The coating system for an ion beam assisted deposition coating device according to claim 1, characterized in that the tape transport system further comprises an independent reeling and winding system, an encoder counter system and a tension detection system; The independent winding and unwinding system comprises a motor, a reducer, a magnetic powder clutch, a magnetic fluid seal and a strip disk which are sequentially connected through a shaft and a coupling, and the strip is wound around the strip disk; The encoder counter system includes an encoder, a magnetic fluid seal and a guide wheel connected in sequence by a shaft and a coupling, and the strip passes around the guide wheel; The tension detection system includes a sensor and a guide wheel connected by a shaft, and the strip passes around the guide wheel. 7. The coating system for an ion beam assisted deposition coating device as described in claim 6 is characterized in that the strip is tensioned on the guide wheel, and the middle part of the guide wheel along the width direction of the strip is arc-shaped.