[go: up one dir, main page]

CN117946812A - A cleaning composition - Google Patents

A cleaning composition Download PDF

Info

Publication number
CN117946812A
CN117946812A CN202211270318.2A CN202211270318A CN117946812A CN 117946812 A CN117946812 A CN 117946812A CN 202211270318 A CN202211270318 A CN 202211270318A CN 117946812 A CN117946812 A CN 117946812A
Authority
CN
China
Prior art keywords
hydroxide
cleaning composition
composition according
acid
content
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211270318.2A
Other languages
Chinese (zh)
Inventor
张维棚
刘兵
赵鹏
彭洪修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Priority to CN202211270318.2A priority Critical patent/CN117946812A/en
Priority to KR1020257012420A priority patent/KR20250071253A/en
Priority to PCT/CN2023/124130 priority patent/WO2024083019A1/en
Priority to JP2025522657A priority patent/JP2025535914A/en
Priority to TW112139766A priority patent/TW202418010A/en
Publication of CN117946812A publication Critical patent/CN117946812A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0084—Antioxidants; Free-radical scavengers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2079—Monocarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2096—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/33—Amino carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
    • H10P70/277—
    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Detergent Compositions (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本发明涉及一种清洗组合物，具体包括：碱性化合物，醇胺，缓蚀剂，螯合剂和溶剂。本发明的积极进步效果在于可有效去除CMP后晶片表面残留物。且不会腐蚀铜互联器和Low‑k材料。操作窗口大，在半导体CMP后清洗中具有广泛的应用前景。The present invention relates to a cleaning composition, which specifically comprises: an alkaline compound, an alcohol amine, a corrosion inhibitor, a chelating agent and a solvent. The present invention has the positive effect of effectively removing the residue on the surface of a wafer after CMP. It does not corrode copper interconnects and Low-k materials. It has a large operating window and has a wide application prospect in semiconductor post-CMP cleaning.

Description

Cleaning composition
Technical Field
The invention relates to the field of semiconductor processing technology, in particular to a cleaning composition.
Background
Copper is the material of choice for the interconnects of advanced semiconductors in semiconductor processing due to its low electrical resistance and ease of processing. Device fabrication with copper requires chemical deposition and Chemical Mechanical Polishing (CMP). Because the polished copper surface produced in CMP devices is determined to be one of the most important factors in interconnect performance, post-CMP cleaning must be effective in removing any residue produced by the polishing process. Thus, CMP slurries and post-CMP cleaners in many cases include one or more corrosion inhibitors selected to form a temporary protective layer on the copper interconnect surface. However, if the organic film remains on the copper interconnect surface after the cleaning process, the presence of such film can interfere with subsequent steps, such as Chemical Vapor Deposition (CVD), and with the final performance of the copper interconnect. The present invention provides a post-CMP cleaning composition that is effective in removing post-CMP wafer surface residues. And does not corrode copper interconnects and Low-k materials. The operation window is large, and the method has wide application prospect in cleaning after semiconductor CMP.
Disclosure of Invention
In order to overcome the technical problems that the cleaning composition cannot simultaneously and effectively remove residues on the surface of a wafer and the copper interconnects and the low-k material have better anti-corrosion technical effects, the invention provides the cleaning composition which comprises an alkaline compound, alcohol amine, a corrosion inhibitor, a chelating agent and a solvent.
Preferably, the basic compound is selected from one or more of potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, choline hydroxide, ammonium hydroxide, benzyltriethylammonium hydroxide (BTEAH), (2-hydroxyethyl) trimethylammonium hydroxide, (2-hydroxyethyl) triethylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide (DEDMAH), dimethyldipropylammonium hydroxide, tris- (2-hydroxyethyl) methylammonium hydroxide.
Preferably, the content of the alkaline compound is 0.05wt% to 35wt%.
Preferably, the content of the alkaline compound is 0.5wt% to 30wt%.
Preferably, the alcohol amine is selected from one or more of ethanolamine, diethanolamine, triethanolamine, diglycolamine, isopropanolamine, hydroxyethyl ethylenediamine, N-methylethanolamine, N-dimethylethanolamine, N-methyldiethanolamine, N '-trimethyl-N' - (2-hydroxyethyl) ethylenediamine.
Preferably, the alcohol amine is present in an amount of 0.05wt% to 35wt%.
Preferably, the alcohol amine is present in an amount of 0.5wt% to 30wt%.
Preferably, the corrosion inhibitor is selected from one or more of diprophylline, 5-aminoimidazole-4-carboxamide, barbituric acid, 3-methyl (triazaalkenyl) imidazole-4-carboxamide, adenine, adenosine, xanthine, hypoxanthine, guanine, guanosine, 5-phenyltetrazole, ascorbic acid, 5-benzylthiotetrazole, 5-mercapto-1-phenyl-1H-tetrazole, 5-benzyl-1H-tetrazole, 3-amino-5-mercapto-1, 2, 4-triazole, 5-amino-4-carboxamide imidazole, 5-amino-1, 2, 4-triazole, 3-mercapto-1, 2, 4-triazole, and methylthiotetrazole.
Preferably, the content of the corrosion inhibitor is 0.005wt% to 15wt%.
Preferably, the content of the corrosion inhibitor is 0.05wt% to 10wt%.
Preferably, the chelating agent is selected from one or more of ammonium tartrate, tartaric acid, ammonium acetate, acetic acid, iminodiacetic acid, EDTA,1, 2-cyclohexanediamine tetraacetic acid, oxalic acid, glycolic acid, malic acid, malonic acid, glyceric acid, betaine, gallic acid, phthalic acid.
Preferably, the chelating agent is present in an amount of 0.005wt% to 15wt%.
Preferably, the chelating agent is present in an amount of 0.05wt% to 10wt%.
Preferably, the solvent is water.
Preferably, the pH of the basic compound is 9 to 13.5.
The invention has the positive progress effects that: can effectively remove the residue on the surface of the wafer after CMP. And does not corrode copper interconnects and Low-k materials. The operation window is large, and the method has wide application prospect in cleaning after semiconductor CMP.
Detailed Description
The application will be further illustrated with reference to specific examples. It is to be understood that these examples are for illustration of the application only and are not intended to limit the scope of the application. It is also to be understood that various changes and modifications may be made by one skilled in the art after reading the description herein, and that such equivalents are intended to fall within the scope of the application as defined in the appended claims.
The cleaning compositions were formulated according to the specific types of each component and their amounts given in table 1.
Taking example 4 as an example, the composition was prepared as follows:
1) 15 parts of tetramethylammonium hydroxide are added in a beaker;
2) 15 parts of triethanolamine are added;
3) 65 parts of water are added and stirred on a magnetic stirrer for 10 minutes;
4) Adding 2.5 parts of ammonium acetate while stirring;
5) Adding 2 parts of guanine during stirring;
6) Continuously stirring until the mixture is clear, and obtaining the required cleaning composition.
TABLE 1 specific Components and content of cleaning compositions of examples 1-20 and comparative examples 1-11
Further selected part of examples and comparative examples 1 to 3 were subjected to performance test, and the results are shown in Table 2.
The specific test conditions are as follows:
Etch rate to copper Adding thirty parts of water into one part of the solution according to the mass ratio of the solution to the water to prepare a diluent, and heating the diluent to an experimental temperature in a reactor. Then, the copper wafer was placed therein and immersed for 5 minutes, and after rinsing with deionized water, it was dried with a nitrogen stream, and the etching rate was calculated by measuring the resistance value change before and after etching with a four-point probe.
Etch rate to cobaltAdding thirty parts of water into one part of the solution according to the mass ratio of the solution to the water to prepare a diluent, and heating the diluent to an experimental temperature in a reactor. Then, the cobalt wafer was placed in the chamber and immersed for 5min, and after deionized water rinse, the cobalt wafer was dried with a nitrogen stream, and the etching rate was calculated by measuring the resistance change before and after etching with a four-point probe.
Change in copper surface roughness (nm) after cleaning: adding thirty parts of water into one part of the solution according to the mass ratio of the solution to the water to prepare a diluent, and heating the diluent to an experimental temperature in a reactor. Then, the copper wafer was placed therein and immersed for 5 minutes, and after rinsing with deionized water, it was blow-dried with a nitrogen stream, and the change in Ra value was measured by AFM.
Change in surface roughness (nm) of cobalt after cleaning: adding thirty parts of water into one part of the solution according to the mass ratio of the solution to the water to prepare a diluent, and heating the diluent to an experimental temperature in a reactor. The cobalt wafer was then placed in it for 5min, rinsed with deionized water, and blow-dried with a nitrogen stream, and the change in Ra value was measured by AFM.
TABLE 2 test results for examples 1-10 and comparative examples 1-11
Comparative examples 1-6 and comparative examples 1-6 show that the cleaning compositions of examples 1-6 have significantly reduced copper and cobalt etching rates with the same types and amounts of alkaline compounds and alcohol amines, indicating that the corrosion inhibitors and chelating agents selected in the present invention can act to reduce the copper and cobalt etching rates of the compositions. From the test results of comparative examples 7 and 8, it is understood that when the content of the basic compound or the alcohol amine is too high or too low, the roughness of the metal surface after cleaning is not satisfactory even if the etching rate of the metal surface by the cleaning composition is lowered.
Further selecting some examples and comparative examples, the copper wafer surface particles and organic residue removal capability test was performed, and the results are shown in table 3.
The specific test conditions are as follows:
Testing the residual particles on the surface of the copper wafer: adding thirty parts of water into one part of the solution according to the mass ratio of the solution to the water to prepare a diluent, and heating the diluent to an experimental temperature in a reactor. The copper wafer was cut into 3cm x 3cm squares, which were polished on a CMP machine for 60 seconds and then cleaned on a cleaning machine for 60 seconds using the cleaning composition of the present invention. Taking out the square sheet, flushing the square sheet with deionized water for 60 seconds, and drying the square sheet with nitrogen. The number of particles on the surface of the copper square sheet was measured by SP2 for the square sheet treated in the above steps, the remaining amount of organic matters on the surface of the copper square sheet was measured by XPS, and the number of scratches (scartch) on the surface of the copper square sheet was observed under a microscope. And meanwhile, the product is also compared with the similar products sold in the market, and the results are shown in Table 3.
Table 3 results of test for residual particles on copper wafer surface of some examples and comparative examples
The results show that the composition of the invention can effectively clean copper surface residues after CMP, has good inhibition effect on copper etching and can control the metal corrosion rate to beThe following is given. And will not remain on the wafer surface.
Comparison of example 4 with commercially available products shows that the invention has the ability to use PCMP cleaning in semiconductor manufacturing, readily available raw materials, and simple formulation. As can be seen from comparison of the test results of the inventive example 4 with the test results of the comparative example 4 and the test results of the comparative examples 9 to 11, the particle count of the copper surface and the surface organic matter residue are significantly reduced after the cleaning composition of the inventive example 4 is cleaned, and the scratch count of the copper surface is controlled to be more desirable. The test results in table 2 show that the corrosion inhibitor selected in the invention can not only effectively reduce the etching speed of the cleaning composition on the metal surface, but also effectively improve the appearance of the metal surface after cleaning. Meanwhile, in the cleaning compositions of comparative examples 9 to 11, the alkali compound, the alcohol amine or the chelating agent was absent, and the metal surface particles after cleaning were more, the organic residues were more, and the scratch number was also significantly more than that of the commercial products, and the technical effect was poor. Compared with the prior art, the invention simultaneously uses the alkali compound, the alcohol amine, the corrosion inhibitor and the chelating agent of specific types, has the technical effects of effectively removing organic residues on the back surface of the CMP, reducing the etching speed of the copper interconnects and the Low-k material and ensuring ideal surface morphology of the cleaned material under the content of specific components, and has wide application prospect in the cleaning of the semiconductor after the CMP.
It should be noted that the embodiments of the present invention are preferred and not limited in any way, and any person skilled in the art may make use of the above-disclosed technical content to change or modify the same into equivalent effective embodiments without departing from the technical scope of the present invention, and any modification or equivalent change and modification of the above-described embodiments according to the technical substance of the present invention still falls within the scope of the technical scope of the present invention.

Claims (14)

1.一种用于具有铜互联器的半导体器件的碱性CMP后清洗组合物，其特征在于，1. An alkaline post-CMP cleaning composition for semiconductor devices having copper interconnects, characterized in that: 包括碱性化合物，醇胺，缓蚀剂，螯合剂和溶剂。These include alkaline compounds, amines, corrosion inhibitors, chelating agents and solvents. 2.如权利要求1所述的清洗组合物，其特征在于，2. The cleaning composition according to claim 1, characterized in that 所述碱性化合物选自氢氧化钾，氢氧化钠，四甲基氢氧化铵，四乙基氢氧化铵，四丙基氢氧化铵，氢氧化胆碱，氢氧化铵，苄基三乙基氢氧化铵(BTEAH)，四丁基氢氧化鏻(TBPH)，(2-羟乙基)三甲基氢氧化铵，(2-羟乙基)三乙基氢氧化铵，(2-羟乙基)三丙基氢氧化铵，(1-羟丙基)三甲基氢氧化铵，乙基三甲基氢氧化铵，二乙基二甲基氢氧化铵(DEDMAH)，二甲基二丙基氢氧化铵，三-(2-羟乙基)甲基氢氧化铵中的一种或多种。The alkaline compound is selected from potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, choline hydroxide, ammonium hydroxide, benzyltriethylammonium hydroxide (BTEAH), tetrabutylphosphonium hydroxide (TBPH), (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide (DEDMAH), dimethyldipropylammonium hydroxide, tri-(2-hydroxyethyl)methylammonium hydroxide and one or more thereof. 3.如权利要求1所述的清洗组合物，其特征在于，3. The cleaning composition according to claim 1, characterized in that 所述碱性化合物的含量为0.05wt％-35wt％。The content of the basic compound is 0.05wt%-35wt%. 4.如权利要求3所述的清洗组合物，其特征在于，4. The cleaning composition according to claim 3, characterized in that 所述碱性化合物的含量为0.5wt％-30wt％。The content of the basic compound is 0.5wt%-30wt%. 5.如权利要求1所述的清洗组合物，其特征在于，5. The cleaning composition according to claim 1, wherein 所述醇胺选自乙醇胺，二乙醇胺，三乙醇胺，二甘醇胺，异丙醇胺，羟乙基乙二胺，N-甲基乙醇胺，N,N-二甲基乙醇胺，N-甲基二乙醇胺，N,N,N’-三甲基-N’-(2-羟乙基)乙二胺中的一种或多种。The alcohol amine is selected from one or more of ethanolamine, diethanolamine, triethanolamine, diglycolamine, isopropanolamine, hydroxyethylethylenediamine, N-methylethanolamine, N,N-dimethylethanolamine, N-methyldiethanolamine, and N,N,N'-trimethyl-N'-(2-hydroxyethyl)ethylenediamine. 6.如权利要求1所述的清洗组合物，其特征在于，6. The cleaning composition according to claim 1, characterized in that 所述醇胺的含量为0.05wt％-35wt％。The content of the alcohol amine is 0.05wt%-35wt%. 7.如权利要求6所述的清洗组合物，其特征在于，7. The cleaning composition according to claim 6, characterized in that 所述醇胺的含量为0.5wt％-30wt％。The content of the alcohol amine is 0.5wt%-30wt%. 8.如权利要求1所述的清洗组合物，其特征在于，8. The cleaning composition according to claim 1, wherein 所述缓蚀剂选自二羟丙茶碱，别嘌醇，抗坏血酸，5-氨基咪唑-4-甲酰胺，巴比妥酸，3-甲基(三氮杂烯基)咪唑-4-甲酰胺，腺嘌呤，腺苷，黄嘌呤，鸟嘌呤，鸟苷，5-苯基四氮唑，抗坏血酸，5-苄硫基四氮唑，5-巯基-1-苯基-1H-四唑，5-苄基-1H-四唑，3-氨基-5-巯基-1,2,4-三氮唑，5-氨基-4-甲酰胺咪唑，5-氨基-1,2,4-三氮唑，3-氨基-1,2,4-三氮唑，3-巯基-1,2,4-三氮唑，甲巯四氮唑，甲巯咪唑中的一种或多种。The corrosion inhibitor is selected from one or more of diprophylline, allopurinol, ascorbic acid, 5-aminoimidazole-4-carboxamide, barbituric acid, 3-methyl(triazaalkenyl)imidazole-4-carboxamide, adenine, adenosine, xanthine, guanine, guanosine, 5-phenyltetrazole, ascorbic acid, 5-benzylthiotetrazole, 5-mercapto-1-phenyl-1H-tetrazole, 5-benzyl-1H-tetrazole, 3-amino-5-mercapto-1,2,4-triazole, 5-amino-4-carboxamidoimidazole, 5-amino-1,2,4-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, methylthiotetrazole, and methylthioimidazol. 9.如权利要求1所述的清洗组合物，其特征在于，9. The cleaning composition according to claim 1, wherein 所述缓蚀剂的含量为0.005wt％-15wt％。The content of the corrosion inhibitor is 0.005wt%-15wt%. 10.如权利要求9所述的清洗组合物，其特征在于，10. The cleaning composition according to claim 9, characterized in that 所述缓蚀剂的含量为0.05wt％-10wt％。The content of the corrosion inhibitor is 0.05wt%-10wt%. 11.如权利要求1所述的清洗组合物，其特征在于，11. The cleaning composition according to claim 1, characterized in that 所述螯合剂选自酒石酸铵，酒石酸，醋酸铵，醋酸，亚氨基二乙酸，EDTA，1,2-环己二胺四乙酸，草酸，乙醇酸，苹果酸，丙二酸，甘油酸，甜菜碱，没食子酸，邻苯二甲酸中的一种或多种。The chelating agent is selected from one or more of ammonium tartrate, tartaric acid, ammonium acetate, acetic acid, iminodiacetic acid, EDTA, 1,2-cyclohexanediaminetetraacetic acid, oxalic acid, glycolic acid, malic acid, malonic acid, glyceric acid, betaine, gallic acid, and phthalic acid. 12.如权利要求1所述的清洗组合物，其特征在于，12. The cleaning composition according to claim 1, wherein 所述螯合剂的含量为0.005wt％-15wt％。The content of the chelating agent is 0.005wt%-15wt%. 13.如权利要求12所述的清洗组合物，其特征在于，13. The cleaning composition according to claim 12, characterized in that 所述螯合剂的含量为0.05wt％-10wt％。The content of the chelating agent is 0.05wt%-10wt%. 14.如权利要求1所述的清洗组合物，其特征在于，14. The cleaning composition according to claim 1, wherein 所述溶剂为水。The solvent is water.
CN202211270318.2A 2022-10-18 2022-10-18 A cleaning composition Pending CN117946812A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN202211270318.2A CN117946812A (en) 2022-10-18 2022-10-18 A cleaning composition
KR1020257012420A KR20250071253A (en) 2022-10-18 2023-10-12 Cleaning composition
PCT/CN2023/124130 WO2024083019A1 (en) 2022-10-18 2023-10-12 Cleaning composition
JP2025522657A JP2025535914A (en) 2022-10-18 2023-10-12 Cleaning Composition
TW112139766A TW202418010A (en) 2022-10-18 2023-10-18 Cleaning composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211270318.2A CN117946812A (en) 2022-10-18 2022-10-18 A cleaning composition

Publications (1)

Publication Number Publication Date
CN117946812A true CN117946812A (en) 2024-04-30

Family

ID=90736874

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211270318.2A Pending CN117946812A (en) 2022-10-18 2022-10-18 A cleaning composition

Country Status (5)

Country Link
JP (1) JP2025535914A (en)
KR (1) KR20250071253A (en)
CN (1) CN117946812A (en)
TW (1) TW202418010A (en)
WO (1) WO2024083019A1 (en)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US7435712B2 (en) * 2004-02-12 2008-10-14 Air Liquide America, L.P. Alkaline chemistry for post-CMP cleaning
US7365045B2 (en) * 2005-03-30 2008-04-29 Advanced Tehnology Materials, Inc. Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide
CN101233221A (en) * 2005-05-26 2008-07-30 高级技术材料公司 Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2015116818A1 (en) * 2014-01-29 2015-08-06 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
CN110004449A (en) * 2019-04-24 2019-07-12 上海新阳半导体材料股份有限公司 Cleaning solution, preparation method and application after stable type chemically mechanical polishing
CN113186543B (en) * 2021-04-27 2023-03-14 上海新阳半导体材料股份有限公司 Post-chemical mechanical polishing cleaning solution and preparation method thereof
CN113186036B (en) * 2021-04-27 2023-03-28 上海新阳半导体材料股份有限公司 Application of post-chemical mechanical polishing cleaning solution
CN113151838B (en) * 2021-04-27 2022-11-11 上海新阳半导体材料股份有限公司 Post-chemical mechanical polishing cleaning solution
CN113186541B (en) * 2021-04-27 2022-08-02 上海新阳半导体材料股份有限公司 Application of post-chemical mechanical polishing cleaning solution
CN113249175B (en) * 2021-04-27 2023-03-24 上海新阳半导体材料股份有限公司 Application of post-chemical mechanical polishing cleaning solution
CN113186540B (en) * 2021-04-27 2022-08-23 上海新阳半导体材料股份有限公司 Post-chemical mechanical polishing cleaning solution

Also Published As

Publication number Publication date
JP2025535914A (en) 2025-10-30
KR20250071253A (en) 2025-05-21
WO2024083019A1 (en) 2024-04-25
TW202418010A (en) 2024-05-01

Similar Documents

Publication Publication Date Title
CN101794088B (en) Composition for removing photoresist and/or etching residue from a substrate and use thereof
JP5647517B2 (en) Novel antioxidants for post-CMP cleaning formulations
TWI726859B (en) Post chemical mechanical polishing formulations and method of use
CN102197124B (en) Copper cleaning and protection formulations
JP4456424B2 (en) Photoresist residue and polymer residue removal composition
US20080076688A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP5886946B2 (en) Semi-water soluble polymer removal composition with enhanced compatibility for copper, tungsten and porous low-κ dielectrics
EP1888735A1 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
TW202010872A (en) Cleaning composition with corrosion inhibitor
TW200428512A (en) Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
JP2015519723A (en) Post-CMP formulations with improved compatibility with barrier layers and cleaning performance
TW201610102A (en) Anti-reflective coating cleaning and post-etch residue removal composition with metal, dielectric and nitride compatibility
EP3599633B1 (en) Post etch residue cleaning compositions and methods of using the same
CN112996893A (en) POST chemical mechanical polishing (POST CMP) cleaning composition
WO2003091377A1 (en) Non-corrosive cleaning compositions for removing etch residues
CN101233221A (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
WO2010051689A1 (en) Rinse solution for removing thick film resist
CN117946812A (en) A cleaning composition
CN114326333B (en) A polyvinyl cinnamate type KPR photoresist etching residue stripping agent composition
CN117590709A (en) Composition and method for removing post-ashing residue and photoresist from semiconductor substrate
TWI387858B (en) Cleaning solution for photoresist
EP2687589A2 (en) Copper passivating post-chemical mechanical polishing cleaning composition and method of use
TW201300523A (en) Solution for removing plasma etching residue
CN113430065B (en) Composition for removing residues after cleaning and etching of anti-reflection coating, preparation method and application
CN109976110A (en) A kind of cleaning solution

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination