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CN117506701A - Surface status identification method, system, thinning method and thinning machine for film supporting table - Google Patents

Surface status identification method, system, thinning method and thinning machine for film supporting table Download PDF

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Publication number
CN117506701A
CN117506701A CN202311463047.7A CN202311463047A CN117506701A CN 117506701 A CN117506701 A CN 117506701A CN 202311463047 A CN202311463047 A CN 202311463047A CN 117506701 A CN117506701 A CN 117506701A
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China
Prior art keywords
wafer
height
carrying platform
profile
thinning
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Pending
Application number
CN202311463047.7A
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Chinese (zh)
Inventor
高阳
赵杰
童永娟
葛凡
赵锋
孙志超
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Jiangsu Jingchuang Advanced Electronic Technology Co Ltd
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Jiangsu Jingchuang Advanced Electronic Technology Co Ltd
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Priority to CN202311463047.7A priority Critical patent/CN117506701A/en
Publication of CN117506701A publication Critical patent/CN117506701A/en
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    • H10P52/00
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention discloses a method, a system, a thinning method and a thinning machine for identifying the profile state of a wafer carrying platform, wherein when one wafer carrying platform is thinned, the thinning method firstly acquires real-time data obtained by detecting the profile of the wafer carrying platform in rotation in real time by a first height measuring assembly; determining a first difference value between real-time data and standard data, wherein the standard data is height data obtained by measuring the profile of a standard wafer carrying platform with the profile state meeting the requirement by the first height measuring assembly; finally, determining whether at least one first difference exceeds a first threshold; if yes, determining that the profile state of the wafer carrying platform is not in accordance with the requirement; if not, determining that the profile state of the wafer bearing platform meets the requirement. In the thinning process, the real-time data of the profile height of the wafer carrying platform detected in real time is compared with the standard data, so that whether the profile state of the wafer carrying platform meets the requirement can be effectively identified, and effective data support is provided for improving the thinning quality of the wafer.

Description

承片台的型面状态识别方法、系统、减薄方法及减薄机Surface status recognition method, system, thinning method and thinning machine for film supporting table

技术领域Technical field

本发明涉及半导体器件加工领域,尤其是承片台的型面状态识别方法、系统、减薄方法及减薄机。The invention relates to the field of semiconductor device processing, in particular to a surface status recognition method, system, thinning method and thinning machine for a wafer support table.

背景技术Background technique

在通过减薄机进行减薄时,可以使用申请公布号为CN116652767A、CN115338717A等中国发明专利所揭示的结构,其在减薄时,是将一个晶圆同心放置于承片台上,所述承片台将晶圆吸附固定并带动晶圆自转,同时研磨机构的主轴会带动磨盘下移与晶圆的顶面接触并施加一定的压力从而实现减薄。When thinning through a thinning machine, structures disclosed in Chinese invention patents such as CN116652767A and CN115338717A can be used. During thinning, a wafer is placed concentrically on a wafer support table. The wafer stage adsorbs and fixes the wafer and drives the wafer to rotate. At the same time, the main shaft of the grinding mechanism drives the grinding disc downward to contact the top surface of the wafer and exerts a certain amount of pressure to achieve thinning.

在减薄过程中,会通过第一测高组件测量承片台的型面(顶面)的高度及通过第二测高组件测量承片台上的晶圆的顶面的高度,并根据测得的承片台的型面高度和晶圆的顶面的高度求出晶圆的厚度。因此,承片台的型面状态是影响测厚精度的重要因素,更是影响减薄后晶圆的总厚度偏差的重要因素,而现有技术中缺少对承片台的型面状态的识别。During the thinning process, the height of the profile (top surface) of the wafer support table is measured through the first height measurement component and the height of the top surface of the wafer on the wafer support table is measured through the second height measurement component, and based on the measurement Calculate the thickness of the wafer from the obtained profile height of the wafer stage and the height of the top surface of the wafer. Therefore, the profile state of the wafer support table is an important factor affecting the thickness measurement accuracy, and it is also an important factor affecting the total thickness deviation of the wafer after thinning. However, the existing technology lacks identification of the profile state of the wafer support table. .

发明内容Contents of the invention

本发明的目的就是为了解决现有技术中存在的上述问题,提供一种承片台的型面状态识别方法、系统、减薄方法及减薄机。The purpose of the present invention is to solve the above-mentioned problems existing in the prior art and provide a surface status recognition method, system, thinning method and thinning machine for a film-bearing table.

本发明的目的通过以下技术方案来实现:The purpose of the present invention is achieved through the following technical solutions:

减薄方法,在一个承片台进行减薄时,按照如下步骤确定该承片台的型面状态是否符合要求:For the thinning method, when thinning a film-bearing table, follow the following steps to determine whether the surface condition of the film-bearing table meets the requirements:

S1,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台的型面进行实时检测得到的高度数据;S1, obtain the real-time data measured by the first height-measuring component. The real-time data is the height data obtained by the first height-measuring component detecting the profile of the rotating film-bearing table in real time;

S2,确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台的型面进行测高得到的高度数据;S2, determine the first difference between the real-time data and the standard data. The standard data is the height data obtained by measuring the height of the profile of the standard film-bearing table whose profile state meets the requirements by the first height-measuring component;

S3,确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台的型面状态不符合要求;若否,则确定该承片台的型面状态符合要求。S3. Determine whether at least one of the first differences exceeds the first threshold; if so, determine that the profile state of the film receiving table does not meet the requirements; if not, determine that the profile state of the film receiving table meets the requirements. .

优选的,所述标准数据是所述第一测高组件在标准承片台转动一圈期间测得的高度的均值。Preferably, the standard data is the average value of the height measured by the first height measuring component during one rotation of the standard film-bearing stage.

优选的,所述S3中,在确定有至少一个所述第一差值超过所述第一阈值时,确定所述承片台转动一圈时,所述第一测高组件测得的数据中的最大值和最小值,确定所述最大值和最小值的第二差值是否超过第二阈值,若是,则确定所述承片台的型面状态不符合要求;若否,则确定所述承片台转动一圈过程中计算出的第一差值中大于第一阈值的数量并据此确定所述承片台的型面状态是否符合要求。Preferably, in S3, when it is determined that at least one of the first differences exceeds the first threshold, it is determined that when the film-bearing stage rotates for one revolution, in the data measured by the first height measuring component The maximum value and the minimum value of The number of first differences calculated during one revolution of the film-bearing table that is greater than the first threshold is used to determine whether the profile state of the film-bearing table meets the requirements.

优选的,若确定所述承片台转动一圈过程中计算出的第一差值中大于第一阈值的数量大于承片台转动一圈时,所述第一测高组件测得的所有数据量的至少10%时,则确定所述承片台的型面状态不符合要求。Preferably, if it is determined that the number of the first differences calculated during one revolution of the film-bearing stage that is greater than the first threshold is greater than all the data measured by the first height-measuring component when the film-bearing stage rotates one circle, If at least 10% of the amount is exceeded, it is determined that the surface condition of the film-bearing table does not meet the requirements.

优选的,所述减薄方法还包括S4,在确定所述承片台的型面状态不符合要求时,在该承片台上的当前晶圆完成减薄后,停止减薄机,并在所述承片台的型面状态调整至符合要求后再进行减薄。Preferably, the thinning method also includes S4: when it is determined that the profile state of the wafer platform does not meet the requirements, after the current wafer on the wafer platform is thinned, stop the thinning machine, and The profile state of the film-bearing platform is adjusted to meet the requirements before thinning is performed.

优选的,所述S4包括如下步骤:Preferably, the S4 includes the following steps:

S41,通过测量器材确定所述承片台是否调平,若否,调整所述承片台的调平机构使所述承片台调平后执行S42;若是,执行S43;S41, use measuring equipment to determine whether the film receiving table is leveled. If not, adjust the leveling mechanism of the film supporting table to level the film supporting table and then perform S42; if so, perform S43;

S42,再次通过所述第一测高组件测量所述承片台的顶面高度并确定承片台的型面状态,若确定所述承片台的型面状态符合要求,则使所述减薄机恢复工作;若确定所述承片台的型面状态不符合要求,则执行S43;S42, again measure the height of the top surface of the film-bearing platform through the first height measuring component and determine the profile state of the film-bearing platform. If it is determined that the profile state of the film-bearing platform meets the requirements, the reduction The thin machine resumes work; if it is determined that the profile state of the film-bearing table does not meet the requirements, execute S43;

S43,通过研磨机构将承片台的型面磨平;S43, use the grinding mechanism to grind the surface of the film supporting table;

S44,通过研磨机构将承片台的型面磨成锥形;S44, the surface of the film supporting table is ground into a tapered shape through the grinding mechanism;

S45,重复S42-S44。S45, repeat S42-S44.

优选的,所述减薄机包括多个均分圆周设置的承片台,多个所述承片台围绕分度台的轴线分布,当多个所述承片台调平后,所述分度台驱动多个所述承片台依次转动经过第二测高组件的第二检测头,所述第二检测头的轴线到所述分度台的轴线的距离等于承片台的轴线到分度台的轴线的距离,在一个承片台移动经过所述第二检测头的过程中,根据所述第二测高组件测得数据形成实时高度曲线,将所述实时高度曲线与标准高度曲线进行拟合以确定两条曲线的误差,若确定两条曲线的误差在第三阈值范围内,则确定该承片台的型面状态符合要求,反之则确定该承片台的型面状态不符合要求。Preferably, the thinning machine includes a plurality of sheet-bearing stages arranged evenly around the circumference, and the plurality of sheet-bearing stages are distributed around the axis of the indexing stage. When the plurality of sheet-bearing stages are leveled, the dividing The indexing table drives a plurality of the film-bearing tables to rotate sequentially through the second detection head of the second height-measuring assembly. The distance from the axis of the second detection head to the axis of the indexing table is equal to the distance from the axis of the film-bearing table to the centimeter. The distance between the axis of the measuring platform and the process of a film-bearing platform moving past the second detection head, a real-time height curve is formed based on the data measured by the second height measuring component, and the real-time height curve and the standard height curve are Fitting is performed to determine the errors of the two curves. If the errors of the two curves are determined to be within the third threshold range, it is determined that the profile state of the film-bearing table meets the requirements. Otherwise, it is determined that the profile state of the film-bearing table does not meet the requirements. Meet the requirements.

承片台的型面状态识别方法,包括如下步骤:The method for identifying the profile status of the film-bearing table includes the following steps:

S1,在一个承片台自转进行减薄时,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台的型面进行实时检测得到的高度数据;S1, when a film-bearing table is rotating for thinning, real-time data measured by the first height-measuring component are obtained. The real-time data is obtained by the first height-measuring component detecting the profile of the rotating film-bearing table in real time. altitude data;

S2,确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台的型面进行测高得到的高度数据;S2, determine the first difference between the real-time data and the standard data. The standard data is the height data obtained by measuring the height of the profile of the standard film-bearing table whose profile state meets the requirements by the first height-measuring component;

S3,确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台的型面状态不符合要求;若否,则确定该承片台的型面状态符合要求。S3. Determine whether at least one of the first differences exceeds the first threshold; if so, determine that the profile state of the film receiving table does not meet the requirements; if not, determine that the profile state of the film receiving table meets the requirements. .

承片台的型面状态识别系统,包括:The profile status identification system of the film loading table includes:

数据采集单元,用于在一个承片台自转进行减薄时,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台的型面进行实时检测得到的高度数据;The data acquisition unit is used to obtain real-time data measured by the first height measuring component when a film-bearing table is rotating for thinning. The real-time data is measured by the first height-measuring component on the profile of the rotating film-bearing table. Height data detected in real time;

差值计算单元,用于确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台的型面进行测高得到的高度数据;Difference calculation unit, used to determine the first difference between the real-time data and the standard data. The standard data is the height measurement performed by the first height measurement component on the profile of the standard film-bearing table whose profile status meets the requirements. Obtained height data;

状态判断单元,用于确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台的型面状态不符合要求;若否,则确定该承片台的型面状态符合要求。a state judgment unit, used to determine whether at least one of the first differences exceeds a first threshold; if so, determine that the profile state of the film receiving table does not meet the requirements; if not, determine the profile status of the film receiving table The surface status meets the requirements.

减薄机,包括处理器和存储器,所述存储器存储有可被所述处理器执行的程序,所述程序被执行时实现如上任一所述的减薄方法或如上所述的承片台的型面状态识别方法。A thinning machine includes a processor and a memory. The memory stores a program that can be executed by the processor. When the program is executed, the thinning method as described above or the film-bearing table as described above are implemented. Surface status identification method.

本发明技术方案的优点主要体现在:The advantages of the technical solution of the present invention are mainly reflected in:

本发明在减薄过程中,将实时检测得的承片台的型面高度的实时数据与标准数据进行比较,能够有效地识别出承片台的型面状态是否符合要求,从而为提高晶圆的减薄质量提供了有效地数据支撑。During the thinning process, the present invention compares the real-time detected profile height data of the wafer support table with the standard data, and can effectively identify whether the profile status of the wafer support table meets the requirements, thereby improving the wafer quality. The thinning quality provides effective data support.

本发明使标准数据采用标准承片台转动一圈期间的数据均值,有利于提高判断精度。The present invention adopts the average data value during one rotation of the standard film-bearing table as the standard data, which is beneficial to improving the judgment accuracy.

本发明在判断过程中结合承片台转动一圈期间的数据的最大值和最小值的差值来判断承片台的型面状态,进一步结合对异常数据量的数量的限定,能够有效地减少误判的情况,提高判断精度。During the judgment process, the present invention combines the difference between the maximum value and the minimum value of the data during one rotation of the film platform to determine the profile state of the film platform, and further combines the limit on the amount of abnormal data to effectively reduce the amount of abnormal data. In case of misjudgment, the accuracy of judgment can be improved.

本发明在确定型面异常时,能够通过合理的处理流程从而使不同异常状态的承片台被恢复到符合要求的状态,从而保证减薄质量。When the profile abnormality is determined, the present invention can restore the film-bearing table in different abnormal states to a state that meets the requirements through a reasonable processing flow, thereby ensuring the thinning quality.

本发明在减薄机有多个承片台时,能够快速、高效地确定多个承片台的型面的状态,从而有利于降低设备地调试难度,提高设备调试效率。When the thinning machine has multiple sheet-bearing stages, the present invention can quickly and efficiently determine the profile status of the multiple sheet-bearing stages, thereby conducive to reducing the difficulty of equipment debugging and improving equipment debugging efficiency.

附图说明Description of drawings

图1是本发明中确定承片台的型面的状态是否符合要求的第一实施例的流程示意图;Figure 1 is a schematic flow chart of the first embodiment of the present invention for determining whether the profile of the film receiving table meets the requirements;

图2是本发明中确定承片台的型面的状态是否符合要求的第二实施例的流程示意图;Figure 2 is a schematic flow chart of a second embodiment of the present invention for determining whether the profile of the film receiving table meets the requirements;

图3是本发明中确定承片台的型面的状态不符合要求时对承片台进行修整的流程示意图;Figure 3 is a schematic flow chart of trimming the film-bearing table when it is determined that the profile of the film-bearing table does not meet the requirements in the present invention;

图4是本发明中确定主轴纵向高度的第一示意图;Figure 4 is a first schematic diagram for determining the longitudinal height of the main axis in the present invention;

图5是本发明中确定主轴纵向高度的第二示意图;Figure 5 is a second schematic diagram for determining the longitudinal height of the main axis in the present invention;

图6是本发明中分度台上有三个承片台时进行承片台的型面状态检测的示意图。Figure 6 is a schematic diagram of detecting the profile status of the film receiving tables when there are three film supporting tables on the indexing table according to the present invention.

具体实施方式Detailed ways

本发明的目的、优点和特点,将通过下面优选实施例的非限制性说明进行图示和解释。这些实施例仅是应用本发明技术方案的典型范例,凡采取等同替换或者等效变换而形成的技术方案,均落在本发明要求保护的范围之内。The objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are only typical examples of applying the technical solutions of the present invention. Any technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the scope of protection claimed by the present invention.

在方案的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“前”、“后”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the scheme, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "back", "vertical", "horizontal", " The orientations or positional relationships indicated by "inner", "outside", etc. are based on the orientations or positional relationships shown in the drawings, and are only for convenience and simplicity of description, and do not indicate or imply that the device or element referred to must have a specific orientation. , are constructed and operated in specific orientations and therefore should not be construed as limitations of the invention. Furthermore, the terms “first”, “second” and “third” are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

下面结合附图对本发明揭示的减薄方法进行阐述,理论上:如果承片台1的型面状态是符合要求的,则在该承片台1自转过程中,所述第一测高组件测得的高度值理想状态下应该是相同的,因此,若在该承片台1自转过程中,所述第一测高组件测得的不同位置的高度与第一测高组件在型面状态符合要求的承片台1的型面处测得的高度是不同的,则可以确定所述承片台1的型面状态不符合要求,此时,所述承片台1的型面出现变形和/或所述承片台1的型面不是水平状态(承片台1的轴线与水平面不垂直)。The thinning method disclosed in the present invention will be described below with reference to the accompanying drawings. Theoretically, if the profile state of the film-bearing table 1 meets the requirements, then during the rotation process of the film-bearing table 1, the first height measuring component measures The obtained height values should ideally be the same. Therefore, if during the rotation of the film-bearing stage 1, the heights at different positions measured by the first height-measuring component are consistent with the shape of the first height-measuring component. If the heights measured at the required profiles of the film receiving platform 1 are different, it can be determined that the profile state of the film receiving platform 1 does not meet the requirements. At this time, the profile of the film receiving platform 1 is deformed and /Or the profile of the film-bearing platform 1 is not horizontal (the axis of the film-bearing platform 1 is not perpendicular to the horizontal plane).

所以,如附图1所示,在一个承片台1进行减薄时,按照如下步骤检测该承片台1的型面状态是否符合要求:Therefore, as shown in Figure 1, when a film supporting table 1 is thinned, follow the following steps to check whether the profile state of the chip supporting table 1 meets the requirements:

S1,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台1的型面进行实时检测得到的高度数据;S1, obtain the real-time data measured by the first height-measuring component. The real-time data is the height data obtained by the first height-measuring component detecting the profile of the rotating film-bearing table 1 in real time;

S2,确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台1的型面进行测高得到的高度数据;所述第一测高组件测得所述实时数据和标准数据时在承片台上的检测位置是相同的。S2, determine the first difference between the real-time data and the standard data. The standard data is the height data obtained by the first height measurement component measuring the height of the profile of the standard film-bearing table 1 whose profile meets the requirements. ; When the first height measuring component measures the real-time data and the standard data, the detection position on the film supporting table is the same.

S3,确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台1的型面状态不符合要求;若否,则确定该承片台1的型面状态符合要求。S3, determine whether at least one of the first differences exceeds the first threshold; if so, determine that the profile state of the film receiving table 1 does not meet the requirements; if not, determine the profile state of the film receiving table 1 Meet the requirements.

由于减薄时存在各种振动等因素影响,在通过第一测高组件对标准承片台1进行实际测高时,测得的数据会有一定的浮动,因此,为了避免造成误差,在所述S2中,所述标准数据优选是所述第一测高组件在标准承片台1转动一圈期间测得的高度的均值。即后续,可以将每次测得的实时数据与所述标准数据进行比较。Due to the influence of various vibrations and other factors during thinning, when the actual height measurement of the standard film supporting table 1 is carried out through the first height measurement component, the measured data will fluctuate to a certain extent. Therefore, in order to avoid errors, all In the above S2, the standard data is preferably the average value of the height measured by the first height measuring component during one rotation of the standard film-bearing stage 1 . That is, subsequently, each measured real-time data can be compared with the standard data.

由于第一测高组件的测量值会有一定波动,如果仅基于一两次的异常数据就确定所述承片台1的型面状态不符合要求则容易出现误判。因此,如附图2所示,为了提高检测精度,在所述S3中,在确定有至少一个所述第一差值超过所述第一阈值时,还确定所述承片台1转动一圈时,所述第一测高组件测得的数据中的最大值和最小值,确定所述最大值和最小值的第二差值是否超过第二阈值,若是,则确定所述承片台1的型面状态不符合要求;若否,则确定所述承片台转动一圈过程中计算出的第一差值中大于第一阈值的数量并据此确定所述承片台的型面状态是否符合要求。Since the measurement value of the first height measuring component will fluctuate to a certain extent, misjudgment may easily occur if it is determined that the profile state of the film receiving table 1 does not meet the requirements based on only one or two abnormal data. Therefore, as shown in Figure 2, in order to improve detection accuracy, in S3, when it is determined that at least one of the first differences exceeds the first threshold, it is also determined that the film receiving table 1 rotates once When, the maximum value and the minimum value in the data measured by the first height measurement component are determined to determine whether the second difference between the maximum value and the minimum value exceeds the second threshold. If so, then determine the film receiving stage 1 The profile state does not meet the requirements; if not, determine the number of first differences calculated during one rotation of the film-bearing table that is greater than the first threshold, and determine the profile state of the film-bearing table accordingly. does it reach the requirement.

具体的,若确定所述承片台转动一圈过程中计算出的第一差值中大于第一阈值的数量大于承片台1转动一圈时,所述第一测高组件测得的所有数据量的至少10%时,则确定所述承片台1的型面状态不符合要求,反之则确定所述承片台的型面状态符合要求。Specifically, if it is determined that the number of the first differences calculated during one revolution of the film-bearing stage 1 is greater than the first threshold value when the film-bearing stage 1 rotates one revolution, all height measurement components measured by the first height measuring component will If at least 10% of the data amount is obtained, it is determined that the profile state of the film-bearing table 1 does not meet the requirements; otherwise, it is determined that the profile state of the film-bearing table 1 meets the requirements.

在确定所述承片台1的型面状态不符合要求时,显然需要对所述承片台1的型面状态进行调整,因此,如附图3所示,所述减薄方法还包括S4,在确定所述承片台1的型面状态不符合要求时,在该承片台1上的当前晶圆完成减薄后,停止减薄机,并在所述承片台1的型面状态调整至符合要求后再进行减薄。When it is determined that the profile state of the film-bearing table 1 does not meet the requirements, it is obviously necessary to adjust the profile state of the film-bearing table 1. Therefore, as shown in Figure 3, the thinning method also includes S4 , when it is determined that the profile state of the wafer platform 1 does not meet the requirements, after the current wafer on the wafer platform 1 has been thinned, the thinning machine is stopped, and the profile state of the wafer platform 1 is The condition is adjusted to meet the requirements before thinning.

具体调节时,包括如下步骤:Specific adjustments include the following steps:

S41,通过测量器材确定所述承片台1是否调平,若否,即承片台未调平,因此,调整所述承片台1的调平机构使所述承片台1调平后执行S42;若是,即承片台调平,此时,承片台1的型面状态不符合要求是由于型面变形导致的,因此,需要对型面进行修整,即执行S43;此步骤中,可以将水平仪放置在所述承片台1上从而确定所述承片台1是否调平。S41, use measuring equipment to determine whether the film receiving table 1 is leveled. If not, the film supporting table 1 is not leveled. Therefore, adjust the leveling mechanism of the film supporting table 1 to level the film supporting table 1. Execute S42; if yes, that is, the film receiving table is leveled. At this time, the profile state of the film receiving table 1 does not meet the requirements due to profile deformation. Therefore, the profile needs to be trimmed, that is, perform S43; in this step , a level can be placed on the film receiving table 1 to determine whether the film holding table 1 is leveled.

S42,再次通过所述第一测高组件测量所述承片台1的顶面高度并确定承片台1的型面状态,若确定所述承片台1的型面状态符合要求,则使所述减薄机恢复工作;若否,同样可以确定承片台1的型面状态不符合要求是由于型面变形导致的,因此执行S43。S42, again use the first height measuring component to measure the height of the top surface of the film receiving platform 1 and determine the profile state of the film receiving platform 1. If it is determined that the profile state of the film receiving platform 1 meets the requirements, then The thinning machine resumes operation; if not, it can also be determined that the profile state of the film receiving table 1 does not meet the requirements due to profile deformation, so S43 is executed.

S43,通过研磨机构将承片台1的型面磨平,此时,研磨机构的磨盘3过承片台1的中心。S43, the profile surface of the film supporting table 1 is ground flat by the grinding mechanism. At this time, the grinding disc 3 of the grinding mechanism passes through the center of the chip supporting table 1.

S44,通过研磨机构将承片台的型面磨成锥形后执行S45,此时,承片台的型面仅有很小的锥度,且型面的最高点为型面的中点。具体实现时,可以调整所述承片台1的调平机构,使所述承片台1的型面靠近主轴2的一侧高于型面的另一侧,然后使承片台自转并通过所述研磨机构对承片台1翘起的部分进行研磨,此时,在承片台磨成锥形后,再将所述承片台1调平。当然,在另一种实现方式中,也可以在承片台的型面磨平后,调节所述主轴上的磨盘调平组件使磨盘调整为倾斜状态,此时,磨盘下表面靠近承片台的一侧高于其相对的另一侧,然后通过调整后的磨盘对调平的承片台进行研磨,从而使承片台的型面被磨成锥形。In S44, the profile surface of the film receiving table is ground into a tapered shape through the grinding mechanism and then S45 is executed. At this time, the profile surface of the film supporting table has only a small taper, and the highest point of the profile surface is the midpoint of the profile surface. During specific implementation, the leveling mechanism of the film-bearing table 1 can be adjusted so that the side of the profile of the film-bearing table 1 close to the spindle 2 is higher than the other side of the profile, and then the film-bearing table is allowed to rotate and pass through The grinding mechanism grinds the tilted portion of the film receiving table 1. At this time, after the film supporting table is ground into a tapered shape, the film supporting table 1 is then leveled. Of course, in another implementation mode, after the surface of the film supporting table is smoothed, the grinding plate leveling assembly on the main shaft can be adjusted to adjust the grinding disk to a tilted state. At this time, the lower surface of the grinding plate is close to the chip supporting table. One side is higher than the opposite side, and then the leveled film-bearing table is ground by the adjusted grinding disc, so that the profile of the film-bearing table is ground into a tapered shape.

S45,重复S42-S44。S45, repeat S42-S44.

通过此调节过程能够有效地对承片台1未调平和承片台1的型面出现形变这两种异常情况均有效解决。并且将承片台1的型面在承片台磨成锥形后,能够在晶圆吸附在承片台1上时,通过所述晶圆的微小形变,从而在减薄过程中,晶圆不会因磨盘的摩擦力而产生移动,保证了晶圆的稳定吸附固定,有利于提高减薄质量。Through this adjustment process, two abnormal situations, namely the non-leveling of the film supporting table 1 and the deformation of the profile of the film supporting table 1, can be effectively solved. Moreover, after grinding the profile of the wafer platform 1 into a tapered shape, the wafer can be deformed by the slight deformation when the wafer is adsorbed on the wafer platform 1, so that during the thinning process, the wafer can It will not move due to the friction of the grinding disc, ensuring the stable adsorption and fixation of the wafer, which is beneficial to improving the thinning quality.

在对承片台1进行磨削后,如果按照之前确定的主轴纵向坐标减去晶圆减薄前的厚度来确定后续减薄时,主轴2上的磨盘3与承片台1上的晶圆接触时主轴2需下移的距离,则由于承片台1磨削后的高度降低,则主轴2按照上述需要下移的距离移动后,主轴2上的磨盘3无法与承片台1上的晶圆接触,这样就会造成一段时间内磨盘3无法实现对晶圆的减薄,降低了效率。After grinding the wafer table 1, if the thickness of the wafer before thinning is determined by subtracting the thickness of the wafer from the previously determined longitudinal coordinate of the spindle, the grinding disc 3 on the spindle 2 and the wafer on the wafer table 1 The distance that the spindle 2 needs to move downward when contacting, because the height of the chip supporting table 1 is reduced after grinding, after the spindle 2 moves downward according to the above-mentioned distance required, the grinding disc 3 on the main shaft 2 cannot contact the grinding plate 3 on the chip supporting table 1 The wafer is in contact, which will cause the grinding disc 3 to be unable to thin the wafer for a period of time, reducing the efficiency.

因此,在对承片台1进行磨削后,需要重新确定该承片台1对应的主轴纵向坐标(将主轴2的轴向定义为纵向),如附图4所示,人工控制主轴2下移至其上的磨盘3与该承片台1上的对刀块4的顶面接触,将此时确定的主轴2的下移高度S1和对刀块4的高度H1相加得到该承片台1对应的新的主轴纵向坐标。在减薄机恢复减薄时,用该新的主轴纵向坐标减去晶圆减薄前的厚度得到此次减薄时主轴2需下移的距离,主轴2下移该需下移的距离后,主轴2上的磨盘3与该承片台1上的晶圆的顶面接触,后续可根据预先确定的流程进行减薄。Therefore, after grinding the chip table 1, it is necessary to re-determine the spindle longitudinal coordinates corresponding to the chip table 1 (define the axial direction of the spindle 2 as the longitudinal direction). As shown in Figure 4, manually control the spindle 2 down The grinding disc 3 moved thereon is in contact with the top surface of the tool setting block 4 on the chip holding table 1. The downward movement height S1 of the spindle 2 and the height H1 of the tool setting block 4 determined at this time are added to obtain the chip holding table. The new spindle longitudinal coordinate corresponding to stage 1. When the thinning machine resumes thinning, use the new spindle longitudinal coordinate to subtract the thickness of the wafer before thinning to obtain the distance that spindle 2 needs to move downward during this thinning. After the spindle 2 moves downward by the distance that needs to be moved, , the grinding disc 3 on the spindle 2 is in contact with the top surface of the wafer on the wafer support table 1, and subsequent thinning can be carried out according to a predetermined process.

并且,在后续每次减薄时,如附图5所示,根据该承片台1前一次减薄完成时测得的晶圆厚度及主轴2的实际下移距离确定新的主轴纵向坐标,即将减薄完成时测得的晶圆厚度T加上所述主轴2的实际下移距离S2得到新的主轴纵向坐标;再根据所述新的主轴纵向坐标确定主轴2由纵向原点下移至主轴2上的磨盘3与承片台1上的晶圆的顶面接触时需下移的距离,最后使主轴2下移所述需下移的距离并进行研磨。这样能有效地避免按照固定的主轴纵向坐标减去晶圆减薄前的厚度得到减薄时主轴2需下移的距离,由于未考虑到磨盘3磨损从而导致存在空行程的问题。Moreover, during each subsequent thinning, as shown in Figure 5, the new spindle longitudinal coordinate is determined based on the wafer thickness measured when the previous thinning was completed on the wafer stage 1 and the actual downward movement distance of the spindle 2. The wafer thickness T measured when thinning is completed is added to the actual downward movement distance S2 of the spindle 2 to obtain a new spindle longitudinal coordinate; and then based on the new spindle longitudinal coordinate, it is determined that the spindle 2 moves downward from the longitudinal origin to the main axis. When the grinding disc 3 on the wafer 2 contacts the top surface of the wafer on the wafer stage 1, it needs to move downward. Finally, the spindle 2 is moved downward by the distance needed to be moved downward and grinded. This can effectively avoid subtracting the thickness of the wafer before thinning from the fixed spindle longitudinal coordinate to obtain the distance that the spindle 2 needs to move downward when thinning. The problem of idle stroke caused by not considering the wear of the grinding disc 3 is not taken into account.

进一步,可以根据相邻两次的主轴纵向坐标来确定磨盘3一次减薄后的损耗量,这样的方式计算更简单,将每次减薄后的损耗量求和即可得到磨盘3的总损耗量,后续可以判断总损耗量是否达到设定的阈值,若是,则确定磨盘3需要更换,反之,磨盘3可以继续使用。Furthermore, the loss amount of the grinding disc 3 after one thinning can be determined based on the two adjacent longitudinal coordinates of the spindle. This method is simpler to calculate. The total loss of the grinding disc 3 can be obtained by summing the losses after each thinning. amount, and then it can be determined whether the total loss reaches the set threshold. If so, it is determined that the grinding disc 3 needs to be replaced. Otherwise, the grinding disc 3 can continue to be used.

另外,在减薄过程中,所述减薄机可以仅有一个承片台1,更优的,所述减薄机包括多个均分圆周设置的承片台1,例如可以是申请公布号为CN115338717A的中国发明专利所揭示的结构,如附图6所示,多个所述承片台1围绕分度台5的轴线分布,在减薄机组装并使多个所述承片台1调平后,所述分度台5驱动多个所述承片台1依次转动经过第二测高组件的第二检测头6,所述第二测高组件用于测量晶圆的顶面高度,所述第二检测头6的轴线到所述分度台5的轴线的距离等于承片台1的轴线到分度台5的轴线的距离,当确定一个承片台1转动到第二检测头6下方时,所述第二检测头6下移打在所述承片台1上,此时,所述第二检测头在该承片台1上划过的轨迹7为过该承片台的中心的圆弧,当所述承片台1转动经过所述承片台1时,所述第二检测头6上移,且在一个承片台1移动经过所述第二检测头6的过程中,根据所述第二测高组件测得的数据形成实时高度曲线,将所述实时高度曲线与所述标准承片台1对应的标准高度曲线进行拟合以确定两条曲线的误差,若确定两条曲线的误差在第三阈值范围内,则确定该承片台1的型面状态符合要求,反之则确定该承片台1的型面状态不符合要求。这样能够实现多个承片台1的型面状态的快速识别确定,提高效率。所述标准高度曲线同样是使标准承片台1转动经过所述第二检测头6并根据第二测量组件在此期间测得数据确定。同时,通过曲线拟合确定实时高度曲线与标准高度曲线的误差的具体方法为已知技术,此处不作赘述;所述第三阈值可以根据需要设定,此处不作限定。当然在具有多个承片台时,同样可以在每个承片台转动到第一测高组件处时,通过第一测高组件检测自转中的承片台的型面,并根据第一测高组件实时测得的数据来判断每个承片台的型面状态。In addition, during the thinning process, the thinning machine may have only one sheet-bearing platform 1. More preferably, the thinning machine includes a plurality of sheet-bearing platforms 1 arranged evenly around the circumference. For example, the thinning machine may be It is the structure disclosed in the Chinese invention patent CN115338717A. As shown in Figure 6, a plurality of the film-bearing stages 1 are distributed around the axis of the indexing table 5. The multiple film-bearing stages 1 are assembled in the thinning machine. After leveling, the indexing stage 5 drives a plurality of the wafer-carrying stages 1 to rotate sequentially past the second detection head 6 of the second height-measuring component, which is used to measure the top surface height of the wafer. , the distance from the axis of the second detection head 6 to the axis of the indexing table 5 is equal to the distance from the axis of the film-bearing table 1 to the axis of the indexing table 5. When it is determined that a film-bearing table 1 rotates to the second detection When the head 6 is downward, the second detection head 6 moves downward to hit the film support table 1. At this time, the trajectory 7 drawn by the second detection head on the film support table 1 is through the film support table 1. The arc at the center of the table. When the film receiving table 1 rotates and passes through the film receiving table 1, the second detection head 6 moves upward, and when a film receiving table 1 moves past the second detection head 6 In the process, a real-time height curve is formed based on the data measured by the second height measurement component, and the real-time height curve is fitted to the standard height curve corresponding to the standard film-bearing stage 1 to determine the error of the two curves. , if it is determined that the error between the two curves is within the third threshold range, it is determined that the profile state of the film receiving table 1 meets the requirements; otherwise, it is determined that the profile state of the film receiving table 1 does not meet the requirements. In this way, the profile status of multiple film-bearing stages 1 can be quickly identified and determined, thereby improving efficiency. The standard height curve is also determined by rotating the standard film-bearing stage 1 past the second detection head 6 and based on the data measured by the second measurement component during this period. At the same time, the specific method of determining the error between the real-time height curve and the standard height curve through curve fitting is a known technology and will not be described in detail here; the third threshold can be set as needed and is not limited here. Of course, when there are multiple film-bearing stages, it is also possible to use the first height-measuring component to detect the profile of the rotating film-bearing stage when each film-bearing stage rotates to the first height-measuring component, and measure the shape of the rotating film-bearing stage according to the first height-measuring component. The real-time measured data of high components is used to judge the profile status of each film-bearing table.

实施例2Example 2

本实施例揭示了一种承片台1的型面状态识别方法,包括如下步骤:This embodiment discloses a method for identifying the profile status of the film supporting table 1, which includes the following steps:

S1,在一个承片台1自转进行减薄时,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台1的型面进行实时检测得到的高度数据;S1, when a film-bearing table 1 is rotating for thinning, real-time data measured by the first height-measuring component are obtained. The real-time data is the real-time detection of the profile of the rotating film-bearing table 1 by the first height-measuring component. Obtained height data;

S2,确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台1的型面进行测高得到的高度数据;S2, determine the first difference between the real-time data and the standard data. The standard data is the height data obtained by the first height measurement component measuring the height of the profile of the standard film-bearing table 1 whose profile meets the requirements. ;

S3,确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台1的型面状态不符合要求;若否,则确定该承片台1的型面状态符合要求。S3, determine whether at least one of the first differences exceeds the first threshold; if so, determine that the profile state of the film receiving table 1 does not meet the requirements; if not, determine the profile state of the film receiving table 1 Meet the requirements.

实施例3Example 3

本实施例揭示了一种承片台1的型面状态识别系统,包括:This embodiment discloses a profile status identification system for the film supporting table 1, which includes:

数据采集单元,用于在一个承片台1自转进行减薄时,获取第一测高组件测得的实时数据,所述实时数据是第一测高组件对自转中的承片台1的型面进行实时检测得到的高度数据;The data acquisition unit is used to obtain real-time data measured by the first height measuring component when a film-bearing table 1 is rotating for thinning. The real-time data is the shape of the first height-measuring component to the rotating film-bearing table 1. Height data obtained from real-time detection of the surface;

差值计算单元,用于确定所述实时数据与标准数据的第一差值,所述标准数据是所述第一测高组件对型面状态符合要求的标准承片台1的型面进行测高得到的高度数据;The difference calculation unit is used to determine the first difference between the real-time data and the standard data. The standard data is the profile of the standard film-bearing table 1 whose profile state meets the requirements measured by the first height measurement component. High obtained altitude data;

状态判断单元,用于确定是否有至少一个所述第一差值超过第一阈值;若是,则确定所述承片台1的型面状态不符合要求;若否,则确定该承片台1的型面状态符合要求。a state judgment unit, used to determine whether at least one of the first differences exceeds a first threshold; if so, determine that the profile state of the film receiving table 1 does not meet the requirements; if not, determine that the film receiving table 1 The surface condition meets the requirements.

实施例4Example 4

本实施例揭示了一种减薄机,包括处理器和存储器,所述存储器存储有可被所述处理器执行的程序,所述程序被执行时实现如上所述的减薄方法或如上所述的承片台1的型面状态识别方法。This embodiment discloses a thinning machine, which includes a processor and a memory. The memory stores a program that can be executed by the processor. When the program is executed, the thinning method as described above or the thinning method as described above is implemented. Method for identifying the profile status of the film-bearing table 1.

本发明尚有多种实施方式,凡采用等同变换或者等效变换而形成的所有技术方案,均落在本发明的保护范围之内。The present invention still has multiple implementation modes, and all technical solutions formed by adopting equivalent transformation or equivalent transformation fall within the protection scope of the present invention.

Claims (10)

1. The thinning method is characterized in that: when one piece bearing table is thinned, determining whether the profile state of the piece bearing table meets the requirement according to the following steps:
s1, acquiring real-time data measured by a first height measurement assembly, wherein the real-time data is height data obtained by detecting the profile of a rotating wafer carrying platform in real time by the first height measurement assembly;
s2, determining a first difference value between the real-time data and standard data, wherein the standard data is height data obtained by measuring the profile of a standard wafer carrying platform with the profile state meeting the requirement by the first height measurement assembly;
s3, determining whether at least one first difference exceeds a first threshold; if yes, determining that the profile state of the wafer carrying platform does not meet the requirement; if not, determining that the profile state of the wafer bearing platform meets the requirement.
2. The thinning method according to claim 1, characterized in that: the standard data is a mean of heights measured by the first height measurement assembly during one revolution of the standard wafer carrier.
3. The thinning method according to claim 1, characterized in that: in the step S3, when it is determined that at least one first difference exceeds the first threshold, it is determined that a maximum value and a minimum value in data measured by the first height measurement assembly are the maximum value and the minimum value when the wafer carrying platform rotates one circle, it is determined whether a second difference between the maximum value and the minimum value exceeds a second threshold, and if yes, it is determined that the profile state of the wafer carrying platform does not meet the requirement; if not, determining the number of the first difference values which are larger than a first threshold value in the process of rotating the wafer carrying platform for one circle, and determining whether the profile state of the wafer carrying platform meets the requirement according to the number.
4. A thinning method according to claim 3, characterized in that: and if the number of the first difference values larger than the first threshold value in the first difference value calculated in the process of rotating the wafer carrying platform for one circle is determined to be larger than at least 10% of all data amounts measured by the first height measuring assembly in one circle, determining that the profile state of the wafer carrying platform is not in accordance with the requirement.
5. The method of claim 1, further comprising S4, stopping the thinning machine after the current wafer on the wafer support is thinned when the profile state of the wafer support is determined to be unsatisfactory, and thinning the wafer after the profile state of the wafer support is adjusted to be satisfactory.
6. The thinning method according to claim 5, characterized in that: the step S4 comprises the following steps:
s41, determining whether the wafer bearing table is leveled or not through a measuring device, and if not, adjusting a leveling mechanism of the wafer bearing table to enable the wafer bearing table to be leveled, and then executing S42; if yes, executing S43;
s42, measuring the top surface height of the wafer carrying platform through the first height measuring assembly again, determining the profile state of the wafer carrying platform, and if the profile state of the wafer carrying platform is determined to meet the requirement, enabling the thinning machine to resume working; if the molded surface state of the wafer carrying platform is determined to be not in accordance with the requirement, S43 is executed;
s43, grinding the molded surface of the wafer bearing table through a grinding mechanism;
s44, grinding the molded surface of the wafer bearing table into a cone shape through a grinding mechanism;
s45, repeating S42-S44.
7. The thinning method according to any one of claims 1 to 6, wherein: the thinning machine comprises a plurality of piece bearing tables which are uniformly distributed in a circumferential manner, the piece bearing tables are distributed around the axis of the dividing table, after the piece bearing tables are leveled, the dividing table drives the piece bearing tables to sequentially rotate to pass through a second detection head of a second height measurement assembly, the distance from the axis of the second detection head to the axis of the dividing table is equal to the distance from the axis of the piece bearing table to the axis of the dividing table, in the process that one piece bearing table moves to pass through the second detection head, a real-time height curve is formed according to data measured by the second height measurement assembly, the real-time height curve is fitted with a standard height curve to determine errors of the two curves, if the errors of the two curves are determined to be within a third threshold range, the molded surface state of the piece bearing table is determined to meet the requirements, and otherwise, the molded surface state of the piece bearing table is determined to be not met.
8. The method for identifying the profile state of the wafer carrying platform is characterized by comprising the following steps of:
s1, when one wafer carrying platform rotates to thin, acquiring real-time data measured by a first height measurement assembly, wherein the real-time data is height data obtained by the first height measurement assembly through real-time detection of the molded surface of the wafer carrying platform in rotation;
s2, determining a first difference value between the real-time data and standard data, wherein the standard data is height data obtained by measuring the profile of a standard wafer carrying platform with the profile state meeting the requirement by the first height measurement assembly;
s3, determining whether at least one first difference exceeds a first threshold; if yes, determining that the profile state of the wafer carrying platform does not meet the requirement; if not, determining that the profile state of the wafer bearing platform meets the requirement.
9. The profile state identification system of the wafer carrying platform is characterized by comprising:
the data acquisition unit is used for acquiring real-time data measured by the first height measurement assembly when one wafer carrying platform rotates to thin, wherein the real-time data is height data obtained by the first height measurement assembly through real-time detection of the molded surface of the wafer carrying platform in rotation;
the difference value calculation unit is used for determining a first difference value between the real-time data and standard data, wherein the standard data is height data obtained by measuring the profile of a standard wafer carrying platform with the profile state meeting the requirement by the first height measurement assembly;
a state judging unit for determining whether at least one of the first differences exceeds a first threshold; if yes, determining that the profile state of the wafer carrying platform does not meet the requirement; if not, determining that the profile state of the wafer bearing platform meets the requirement.
10. The thinning machine comprises a processor and a memory, wherein the memory stores a program which can be executed by the processor, and the thinning machine is characterized in that: the program, when executed, implements the thinning method according to any one of claims 1 to 7 or the profile state recognition method of the wafer stage according to claim 8.
CN202311463047.7A 2023-11-06 2023-11-06 Surface status identification method, system, thinning method and thinning machine for film supporting table Pending CN117506701A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118905738A (en) * 2024-10-12 2024-11-08 江苏京创先进电子科技有限公司 Thinning method, dividing table compensation parameter determining system and thinning machine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118905738A (en) * 2024-10-12 2024-11-08 江苏京创先进电子科技有限公司 Thinning method, dividing table compensation parameter determining system and thinning machine
CN118905738B (en) * 2024-10-12 2025-04-11 江苏京创先进电子科技有限公司 Thinning method, indexing table compensation parameter determination method, system and thinning machine

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