CN1174454A - Multi-segment linear variable bias voltage generating circuit - Google Patents
Multi-segment linear variable bias voltage generating circuit Download PDFInfo
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- CN1174454A CN1174454A CN 96109198 CN96109198A CN1174454A CN 1174454 A CN1174454 A CN 1174454A CN 96109198 CN96109198 CN 96109198 CN 96109198 A CN96109198 A CN 96109198A CN 1174454 A CN1174454 A CN 1174454A
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- bias
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- generating circuit
- bias generating
- power supply
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- 230000004044 response Effects 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims description 30
- 238000001514 detection method Methods 0.000 claims description 9
- 230000008676 import Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 230000004913 activation Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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Abstract
A multi-stage linearly variable bias generating circuit for providing the bias signal needed by a circuit device is composed of a power supply input connected to a power supply device for inputting a power supply, and a bias generating circuit connected to the power supply input and generating the bias signal output in multi-stage linearly variable mode in response to the variation of power supply. The bias signal can be used to generate a large amplitude variation effect in response to the power supply, and can also generate different bias signals in response to different power supply voltage requirements, thereby providing an accurate bias working signal for the circuit device.
Description
A kind of bias generating circuit of what is closed in the present invention, is meant a kind of bias generating circuit that produces the bias voltage signal of multistage linear change especially.
In various electronic circuits, bias generating circuit has been played the part of the very extensive and very important role of a kind of application, and its major function promptly provides a stable bias voltage value, makes the circuit arrangement of Hou level can successfully realize running; For example, a Dc bias that connects the what transistor produces circuit, and it is can be in order to a stable Dc bias signal to be provided, and what service area, transistor place, saturation area or cut-off region or the like are arbitrary to be desired to make in the working region of transistor running and make.
The defective of existing bias generating circuit is at what, and it very easily is subjected to the change of power supply or the influence of element characteristic, so that the bias voltage function of can't bringing into normal play, even what causes the distortion of signal maybe can't make the bias value of output maintain one share in the scope.Now, further enumerate an example of using the existing bias generating circuit of what generating circuit from reference voltage now it be described for describing the shortcoming of above-mentioned existing bias generating circuit in detail:
See also Fig. 1, its existing bias generating circuit is used the circuit diagram of what one generating circuit from reference voltage, among what Fig. 1, is to comprise: a power supply generator 1, a generating circuit from reference voltage 2 and a bias generating circuit 3; Wherein, this power supply generator 1 is in order to provide a power supply V
DDGive this generating circuit from reference voltage 2 and 3 uses of this bias generating circuit; This bias generating circuit 3 then is a resistance bias generating circuit, and it comprises bias resistance R
1, R
2
Among what Fig. 1, by this bias resistance R
1, R
2And the equivalent resistance of the nmos pass transistor of Q shown in Fig. 1, can realize this power supply V
DDDividing potential drop, and this bias resistance of what R
1, R
2Mutual serial connection place (being shown in the P place) produce output one bias voltage V
B1, use for this generating circuit from reference voltage 2; Yet, by this power supply of what V
DDRegular meeting is because of the influence change of interference signal or other application circuit factor, and the result will make and desire this bias resistance of mat R originally
1, R
2Matching Design and produce the disappointed in one's expectations of suitable bias voltage; In addition, though using as switch, this nmos pass transistor Q (is subjected to V
C1Signal controlling), yet, because this nmos pass transistor Q also can be along with this power supply V
DDVariation and its equivalent resistance is changed, therefore will more make the design of bias voltage value be difficult for realizing effective target; In addition, have bias voltage value designed in the bias generating circuit now very easily along with this power supply V
DDVariation and produce corresponding change, and away from the scope that is suitable for.
Input impedance Z that must this generating circuit from reference voltage 2 from the place of P shown in Fig. 1
i, itself and this bias resistance R
2The result of parallel connection also shows will influence this bias voltage V
B1Size, yet, or wayward or because of the factor of time or operational environment because of process parameter, even all will make this bias resistance of circuit element R in this generating circuit from reference voltage 2
1, R
2The element characteristic of itself changes, therefore, and with element or this bias resistance R in this generating circuit from reference voltage 2
1, R
2And the equiva lent impedance of this nmos pass transistor Q input impedance Z in close relations
iAlso show and to change and related this bias voltage V that causes
B1Change drift; In brief, existing bias generating circuit very easily is subjected to the change of power supply or element characteristic and departs from the fixed scope of one of former the design, and causing can't provide a suitable bias voltage signal and cause other circuit to produce distorted signals or undesired circuit operation.
The present invention's main purpose provides a kind of bias generating circuit that overcomes the power supply change at what.
Another object of the present invention provides a kind of bias generating circuit that overcomes the element characteristic change at what.
A kind of bias generating circuit of what is closed in the present invention, it is in order to provide a circuit arrangement one of required bias voltage signal, the bias generating circuit of this multistage linear change can comprise: a power input, connect what one power supply generator, and this power input is in order to import a power supply; And a bias generating circuit, connecting this power input of what, this bias generating circuit can be in response to the change of this power supply, and produces this bias voltage signal output in the mode of multistage linear change.
According to above-mentioned notion, wherein this bias generating circuit can comprise: a testing circuit, and it connects this power input of what, and this testing circuit can produce power state detection signal output in response to the change of this power supply; One control circuit connects this testing circuit of what, and this control circuit system can organize control signals to export in order in response to this power state detection signal more; And a multistage bias generating circuit, connecting this control circuit of what, this multistage bias generating circuit is in response to these many group control signals, and produces this bias voltage signal output in the mode of multistage linear change.
According to above-mentioned notion, wherein this testing circuit can be made up of a plurality of diode circuit.
According to above-mentioned notion, wherein this diode circuit system can be a diode element (diode) or is the diode equivalent circuit that is connected to form with diode connection (diode connection) by MOS transistor.
According to above-mentioned notion, wherein this testing circuit can be the testing circuit of energy jump (band-gapreference) pattern.
According to above-mentioned notion, wherein this control circuit can comprise that many group gates should many group control signals to produce, and it is in order in response to this power state detection signal current potential of living in, one of causes in these many group gates the person to produce the corresponding control signal of output one.
According to above-mentioned notion, wherein this multistage bias generating circuit can comprise that many group voltage bias produce circuit, and it is in order in response to these many group control signals, and activation makes many group voltage bias one of produce in the circuit person and produces the corresponding bias voltage signal of output one.
According to above-mentioned notion, wherein this voltage bias generation circuit can comprise a bias switch control device.
According to above-mentioned notion, wherein this bias switch control device can comprise a PMOS or nmos pass transistor.
The present invention elaborates by following accompanying drawing, makes to obtain more deep understanding:
Fig. 1: it uses the circuit diagram of what one generating circuit from reference voltage for existing bias generating circuit;
Fig. 2: it is the circuit diagram in one of the present invention preferred embodiment application what one generating circuit from reference voltage;
Fig. 3: (a)～(c): it is circuit diagram within the bias generating circuit in the preferred embodiment of the present invention;
Fig. 4: it is the waveform comparison schematic diagram of existing bias generating circuit shown in the preferred embodiment of the present invention and in response to mains voltage variations.
Consult Fig. 2, it is the circuit diagram in one of the present invention preferred embodiment application what one generating circuit from reference voltage, and among what Fig. 2, comprising: a power supply generator 1, a generating circuit from reference voltage 2, a power input 31 and a bias voltage produce road 32; Wherein, This power supply generator 1 is in order to provide a power supply V
DDUse in this generating circuit from reference voltage 2 and this bias generating circuit 32; This bias generating circuit 32 then produces one of output bias voltage signal V in the mode of multistage linear change
B2, with in response to this power supply V
DDOr the element characteristic in this generating circuit from reference voltage 2 produces big amplitude variation effect, and making provides this generating circuit from reference voltage 2 one accurate bias voltage working signals.
These bias generating circuit 32 inner one of execution modes in detail preferred embodiments to what the present invention, can comprise: a testing circuit 321, a control circuit 322 and a multistage bias generating circuit 323, and the internal circuit configuration of this testing circuit 321, this control circuit 322 and this multistage bias generating circuit 323 then can see also Fig. 3 (a)～(c).
Now distinguish the operation principle of key diagram 3 (a)～(c) now, make further exposure the present invention's feature.
In Fig. 3 (a), this testing circuit 321 can be by being made of this power supply V with the diode equivalent circuit that diode connection (diode connection) is connected to form a plurality of MOS transistor
DDBecause of being subjected to the influencing change or changed by element characteristic when locating the what different potentials of interference signal, can export V1, V2 signal respectively and be sent to first inverter and the second inverter place, make an anti-phase supply voltage detection signal V1X, the V2X output that transfers to; Wherein, this first inverter is by PMOS transistor M
1With nmos pass transistor M
2The CMOS inverter that is constituted, and this second inverter is by PMOS transistor M
3With nmos pass transistor M
4The CMOS inverter that is constituted; Certainly, the rollback point of above-mentioned inverter (transfer point) can suitably be adjusted, to increase the reliability of circuit.
Hou, this supply voltage detection signal V1X, V2X are promptly exported in this control circuit 322 shown in Fig. 3 (b), and by three groups of logic gates among the figure with in response to power state detection signal V1X, V2X current potential of living in, make and connect to produce three groups of control signal (X1, X1B), (X2, X2B), (X3, X3B) output; Certainly, this every group of logic gates system can be by several anti-or door (NOR gate) constituted with inverse gate gates such as (INVERTOR gate).
Again, these three groups of control signals (X1, X1B), (X2, X2B), (X3 X3B) is exported in this multistage bias generating circuit 323 shown in Fig. 3 (c) again; Wherein, this multistage bias generating circuit 323 can comprise that three groups of voltage bias produce circuit 3231,3232,3233, and each voltage bias of what produces and all can comprise one in circuit by PMOS or bias switch control device that nmos pass transistor constituted; To R shown in the what
1～R
4The person then is all bias resistance.
By what at these three groups of control signal (X1, X1B), (X2, X2B), (X3, X3B) only wherein one can work in, then these three groups of voltage bias produce circuit 3231,3232,3233 in order in response to these three groups of control signals (X1, X1B), (X2, X2B), (X3, X3B) one of can act on the person in, and generation is exported a corresponding bias voltage signal to improve this power supply V
DDCause this bias voltage signal V when locating the what different potentials
B2The phenomenon of drift takes place.
Can illustrate, (X1 X1B) is place's what enabled status, and then it will make voltage bias produce circuit 3231 conductings, at this moment this bias voltage signal V as control signal
B2Value is: (R
2/ (R
1+ R
2)) * V
DD
In like manner, as control signal (X2, X2B) or (X3 X3B) is place's what enabled status, this bias voltage signal V
B2Value promptly is to be respectively:
(R
3/ (R
1+ R
3)) * V
DDAnd (R
4/ (R
1+ R
4)) * V
DD
In addition, close another preferable practice of aforementioned this testing circuit 32 of what, it also can be a diode circuit of being made up of a plurality of diode elements (diode), or is the testing circuit of energy jump (band-gap reference) pattern.
For proof the present invention can acquisition effect, see also Fig. 4, it is this bias generating circuit 32 and the waveform comparison schematic diagram of existing bias generating circuit 3 shown in Fig. 1 in response to mains voltage variations in the preferred embodiment of the present invention, can learn obviously that in Fig. 4 this bias generating circuit 32 really can be in response to power supply V in this case preferred embodiment
DDChange and the bias voltage signal output that produces the multistage linear change.The broken line of A indication is the result of this case preferred embodiment among Fig. 4, and the straight line of B indication is the result of existing bias generating circuit.
In sum, feature in view of the present invention, can avoid making bias voltage signal that violent drift take place because of some artificial uncontrollable factors (for example element self character), simultaneously, the rectification that also can carry out automatically in response to the change of power supply by a relatively large margin improves, make that it produces more suitably, more accurate bias voltage signal output, so the present invention has practical value.
Claims (9)
1. the bias generating circuit of a multistage linear change is characterized in that: provide a circuit arrangement one of required bias voltage signal, this circuit can comprise:
One power input connects what one power supply generator, and this power input is in order to import a power supply; And
One bias generating circuit connects this power input of what, and this bias generating circuit can be because of the change of power supply, and produces this bias voltage signal output in the mode of multistage linear change.
According to claim 1 more than the bias generating circuit of section linear change, it is characterized in that wherein this bias generating circuit system can comprise:
One testing circuit, it connects this power input, and this testing circuit can produce power state detection signal output in response to the change of power supply;
One control circuit, it connects this testing circuit of what, and this control circuit can be organized control signals to export in order in response to the power state detection signal more; And
One multistage bias generating circuit, its connects this control circuit of what, and this multistage bias generating circuit is in response to many group control signals, and produces this bias voltage signal output in the mode of multistage linear change.
3. as the bias generating circuit of section linear change more than as described in the claim 2, it is characterized in that wherein this testing circuit can be by being made up of a plurality of diode circuits.
4. as the bias generating circuit as described in the claim 3, it is characterized in that wherein this diode circuit can be a diode element (diode) or is the diode equivalent circuit that is connected to form with diode connection (diode connection) by MOS transistor.
5. as the bias generating circuit of section linear change more than as described in the claim 2, it is characterized in that, wherein this testing circuit can be can jump (band-gap reference) pattern testing circuit.
6. as the bias generating circuit of section linear change more than as described in the claim 2, it is characterized in that, wherein this control circuit can comprise how the group gates should be organized control signals to produce more, it is in order in response to power state detection signal current potential of living in, one of causes in these many group gates the person and produces the corresponding control signal of output one.
7. as the bias generating circuit of section linear change more than as described in the claim 2, it is characterized in that, wherein this multistage bias generating circuit can comprise that many group voltage bias produce circuit, it is in order in response to many group control signals, causes these many group voltage bias one of to produce in circuit the person and produces the corresponding bias voltage signal of output one.
8. as the bias generating circuit of section linear change more than as described in the claim 7, it is characterized in that wherein this voltage bias produces circuit and can comprise a bias switch control device.
9. as the bias generating circuit of section linear change more than as described in the claim 8, it is characterized in that wherein this bias switch control device can comprise a PMOS or nmos pass transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96109198 CN1174454A (en) | 1996-08-19 | 1996-08-19 | Multi-segment linear variable bias voltage generating circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 96109198 CN1174454A (en) | 1996-08-19 | 1996-08-19 | Multi-segment linear variable bias voltage generating circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1174454A true CN1174454A (en) | 1998-02-25 |
Family
ID=5120297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 96109198 Pending CN1174454A (en) | 1996-08-19 | 1996-08-19 | Multi-segment linear variable bias voltage generating circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1174454A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1296350C (en) * | 2002-11-18 | 2007-01-24 | 德古萨公司 | Method for hydrogenation of aromatic urethanes in the presence of a supported rutheniun catalyst |
-
1996
- 1996-08-19 CN CN 96109198 patent/CN1174454A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1296350C (en) * | 2002-11-18 | 2007-01-24 | 德古萨公司 | Method for hydrogenation of aromatic urethanes in the presence of a supported rutheniun catalyst |
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