CN117334775B - High-transmission-rate photodiode of optical fiber receiving circuit and process method - Google Patents
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Abstract
本发明提供了一种光纤接收电路的高传输速率的光电二极管及工艺方法。一种光纤接收电路的高传输速率的光电二极管，包括：N型衬底；N+区，所述N型衬底上部的两侧分别注入形成所述N+区，在所述N+区开接触孔引出光电二极管的正极；P‑区，在所述N型衬底上注入形成所述P‑区，所述P‑区位于相邻所述N+区之间；P+区，在所述P‑区内注入形成所述P+区；在所述P+区开接触孔引出光电二极管的负极；多晶透光层，所述多晶透光层设置于所述P‑区的上方。本发明提高光电二极管的光电转换速率和转换效率，相同光敏电流下提升至原来的二倍，同时寄生电容降至原来的50％，保证收发端较远时不出现误码，满足各种高品质音响高速传输数据的要求。
The present invention provides a photodiode with a high transmission rate for an optical fiber receiving circuit and a process method. A photodiode with a high transmission rate for an optical fiber receiving circuit comprises: an N-type substrate; an N+ region, the two sides of the upper part of the N-type substrate are respectively injected to form the N+ region, and a contact hole is opened in the N+ region to lead out the positive electrode of the photodiode; a P-region, the P-region is injected on the N-type substrate to form the P-region, and the P-region is located between adjacent N+ regions; a P+ region, the P+ region is injected in the P-region to form the P+ region; a contact hole is opened in the P+ region to lead out the negative electrode of the photodiode; a polycrystalline light-transmitting layer, and the polycrystalline light-transmitting layer is arranged above the P-region. The present invention improves the photoelectric conversion rate and conversion efficiency of the photodiode, and increases it to twice the original under the same photosensitive current, while reducing the parasitic capacitance to 50% of the original, ensuring that no bit errors occur when the transmitting and receiving ends are far away, and meeting the requirements of various high-quality audio high-speed data transmission.
Description
技术领域Technical Field
本发明涉及光电二极管领域，更具体的说是，涉及一种光纤接收电路的高传输速率的光电二极管及工艺方法。The present invention relates to the field of photodiodes, and more specifically, to a photodiode with a high transmission rate in an optical fiber receiving circuit and a process method.
背景技术Background Art
数字光纤音频：音响设备音频输入输出接口使用光纤接入方式；Digital optical audio: The audio input and output interfaces of audio equipment use optical fiber access;
传输速率：是指数据从一个点向另外一个点传输的速度，光纤通信中的重要指标，传输速率的单位有bit、波特；Transmission rate: refers to the speed at which data is transmitted from one point to another. It is an important indicator in optical fiber communication. The units of transmission rate are bit and baud.
光电二极管(PD)：把光信号转换成电信号的传感器件；Photodiode (PD): A sensor device that converts light signals into electrical signals;
音频数据：以一定的频率对音频信号进行模数转换(ADC)得到的数字化的声音；音频数据的重要指标是采样频率，即单位时间内的采样次数，采样频率越大，采样点之间的间隔越小，数字化得到的声音就越逼真，但相应的数据量增大，处理起来就越困难。Audio data: digitized sound obtained by performing analog-to-digital conversion (ADC) on an audio signal at a certain frequency; an important indicator of audio data is the sampling frequency, that is, the number of samples per unit time. The higher the sampling frequency, the smaller the interval between sampling points, and the more realistic the digitized sound. However, the corresponding increase in the amount of data makes it more difficult to process.
光纤音频通信是以光纤作为传输媒介的数据传输方式，相比去传统的模拟信号传输方式，光纤音频传输能够支持杜比数字立体声等多声道传输效果；加上数字光纤音频线在传输过程中，能够完全杜绝外界电磁干扰，从而保证清晰的音质解析效果。Fiber-optic audio communication is a data transmission method that uses optical fiber as the transmission medium. Compared with traditional analog signal transmission methods, fiber-optic audio transmission can support multi-channel transmission effects such as Dolby Digital Stereo. In addition, digital fiber-optic audio cables can completely eliminate external electromagnetic interference during transmission, thereby ensuring clear sound quality analysis.
目前市场上，大多利用硅光光电二极管技术，在硅基上集成光电二极管、信号反馈放大电路、滤波电路、高速比较器电路等，实现光纤音频信号的接收、放大、调整。现有技术的信号流如图1所示。Currently, most of the technologies on the market use silicon photodiode technology to integrate photodiodes, signal feedback amplifier circuits, filter circuits, high-speed comparator circuits, etc. on a silicon base to achieve the reception, amplification, and adjustment of optical fiber audio signals. The signal flow of the existing technology is shown in Figure 1.
现有技术的光电信号转换用光电二极管来实现，光电二极管的工艺兼容标准CMOS工艺流程，光电二极管的结构如图2所示。In the prior art, photoelectric signal conversion is achieved by using a photodiode. The process of the photodiode is compatible with the standard CMOS process flow. The structure of the photodiode is shown in FIG. 2 .
现有的技术方案中，光电二极管表面覆盖了常规工艺过程中的氧化层，这个氧化层一般为钝化保护层，工艺过程中没有做精确控制。在音频数字信号的光纤通信中，通常情况下是调制后的音频数字信号，加载在波长为610nm-650nm的红光，由光纤传输至接收电路，接收电路内部的光电二极管把光信号转换为电信号，由于光电二极管表面覆盖了氧化物的保护层，也就是光的介质层，光透过这个介质层后才会到达光敏面进行光电信号转换。In the existing technical solutions, the surface of the photodiode is covered with an oxide layer in the conventional process. This oxide layer is generally a passivation protective layer, and no precise control is performed during the process. In the optical fiber communication of audio digital signals, the modulated audio digital signal is usually loaded with red light with a wavelength of 610nm-650nm and transmitted to the receiving circuit by the optical fiber. The photodiode inside the receiving circuit converts the optical signal into an electrical signal. Since the surface of the photodiode is covered with an oxide protective layer, that is, a light dielectric layer, the light will reach the photosensitive surface for photoelectric signal conversion only after passing through this dielectric layer.
现有技术中的光电二极管是由N阱和P型注入形成的，这种结构的缺点是光电转换效率低，为了达到高灵敏度的要求，需要增大光电二极管的感光面面积，但感光面面积增大的同时，光电二极管的寄生PN结电容也同时增加，从而限制了光纤的数据传输速率，现有技术无法支持24位/192kHz光纤音频通信，带宽不够支持压缩的杜比数字和DTS环绕声的音频数据传输。The photodiode in the prior art is formed by N-well and P-type injection. The disadvantage of this structure is low photoelectric conversion efficiency. In order to meet the requirements of high sensitivity, the photosensitive surface area of the photodiode needs to be increased. However, as the photosensitive surface area increases, the parasitic PN junction capacitance of the photodiode also increases, thereby limiting the data transmission rate of the optical fiber. The prior art cannot support 24-bit/192kHz optical fiber audio communication, and the bandwidth is insufficient to support compressed Dolby Digital and DTS surround sound audio data transmission.
发明内容Summary of the invention
本发明的目的是提供一种光纤接收电路的高传输速率的光电二极管及工艺方法。The object of the present invention is to provide a photodiode with high transmission rate for an optical fiber receiving circuit and a process method.
本发明要解决的是现有技术中光电二极管存在的光电转化效率低、光纤接收灵敏度和高传输速率不能同时实现的问题。The present invention aims to solve the problems in the prior art that the photoelectric conversion efficiency of the photodiode is low and the optical fiber receiving sensitivity and high transmission rate cannot be achieved simultaneously.
与现有技术相比，本发明技术方案及其有益效果如下：Compared with the prior art, the technical solution of the present invention and its beneficial effects are as follows:
本发明公开的第一方面，提供了一种光纤接收电路的高传输速率的光电二极管，包括：N型衬底；N+区，所述N型衬底上部的两侧分别注入形成所述N+区，在所述N+区开接触孔引出光电二极管的正极；P-区，在所述N型衬底上注入形成所述P-区，所述P-区位于相邻所述N+区之间，所述N型衬底和所述P-区之间形成PN结；P+区，在所述P-区内注入形成所述P+区，所述P+区与所述P-区之间形成欧姆接触；在所述P+区开接触孔引出光电二极管的负极；多晶透光层，所述多晶透光层设置于所述P-区的上方；所述N型衬底的顶端设置有光敏面，光电二极管表面形成一层增透膜。The first aspect disclosed by the present invention provides a photodiode with a high transmission rate for an optical fiber receiving circuit, comprising: an N-type substrate; an N+ region, wherein the N+ region is formed by injection at both sides of the upper portion of the N-type substrate, and a contact hole is opened in the N+ region to lead out the positive electrode of the photodiode; a P- region, wherein the P- region is formed by injection on the N-type substrate, wherein the P- region is located between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P- region; a P+ region, wherein the P+ region is formed by injection in the P- region, and an ohmic contact is formed between the P+ region and the P- region; a contact hole is opened in the P+ region to lead out the negative electrode of the photodiode; a polycrystalline light-transmitting layer, wherein the polycrystalline light-transmitting layer is arranged above the P- region; a photosensitive surface is arranged on the top of the N-type substrate, and a layer of anti-reflection film is formed on the surface of the photodiode.
作为进一步改进的，所述N型衬底材料的电阻率为10-100ohm-cm。As a further improvement, the resistivity of the N-type substrate material is 10-100 ohm-cm.
作为进一步改进的，所述P-区的注入材料为B离子。As a further improvement, the implantation material of the P-region is B ions.
作为进一步改进的，所述P-区的注入剂量为1E13-1E14。As a further improvement, the implantation dose of the P-region is 1E13-1E14.
作为进一步改进的，所述P-区的注入能量为10KeV-100KeV。As a further improvement, the implantation energy of the P-region is 10KeV-100KeV.
作为进一步改进的，所述P-区的注入推进结深为3um-6um。As a further improvement, the implantation driving junction depth of the P-region is 3um-6um.
作为进一步改进的，所述多晶透光层的厚度为100nm-400nm。As a further improvement, the thickness of the polycrystalline light-transmitting layer is 100nm-400nm.
本发明公开的第二方面，提供了一种光纤接收电路的高传输速率的光电二极管的工艺方法，包括：形成N型衬底；在所述N型衬底上部的两侧分别注入形成N+区；在所述N+区开接触孔引出光电二极管的正极；在所述N型衬底上注入形成P-区，所述P-区位于相邻所述N+区之间，所述N型衬底和所述P-区之间形成PN结；在所述P-区内注入形成P+区，所述P+区与所述P-区之间形成欧姆接触；在所述P+区开接触孔引出光电二极管的负极；在所述P-区的上方设置多晶透光层；The second aspect disclosed by the present invention provides a process method for a photodiode with a high transmission rate in an optical fiber receiving circuit, comprising: forming an N-type substrate; injecting N+ regions at both sides of the upper part of the N-type substrate respectively; opening a contact hole in the N+ region to lead out the positive electrode of the photodiode; injecting a P- region on the N-type substrate, the P- region is located between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P- region; injecting a P+ region in the P- region, and an ohmic contact is formed between the P+ region and the P- region; opening a contact hole in the P+ region to lead out the negative electrode of the photodiode; and arranging a polycrystalline light-transmitting layer above the P- region;
多晶透光层的制备方法，包括：在光敏二极管表面覆盖一层厚度可以精确控制的透光层，透光层的材料为多晶(poly)；把光电二极管的光敏面上覆盖的保护层去除；淀积多晶透光层；去除光敏面以外的多晶透光层；在光敏面上形成一层一致性好、厚度可精确控制的多晶透光层。The preparation method of a polycrystalline light-transmitting layer comprises: covering a light-transmitting layer with a precisely controlled thickness on the surface of a photodiode, wherein the material of the light-transmitting layer is polycrystalline (poly); removing a protective layer covering the photosensitive surface of the photodiode; depositing a polycrystalline light-transmitting layer; removing the polycrystalline light-transmitting layer outside the photosensitive surface; and forming a polycrystalline light-transmitting layer with good consistency and precisely controlled thickness on the photosensitive surface.
本发明的有益效果为：The beneficial effects of the present invention are:
本发明采用的工艺平台是N型衬底、P阱工艺；采用了N型衬底，光电二极管直接在衬底上推低浓度的P-注入，P-注入的浓度较小、结深较大，因而能减小PN结的势垒电容，提高光电二极管的光电响应速度；The process platform adopted by the present invention is an N-type substrate and a P-well process; the N-type substrate is adopted, and the photodiode directly pushes a low-concentration P-injection on the substrate. The concentration of the P-injection is small and the junction depth is large, so the barrier capacitance of the PN junction can be reduced and the photoelectric response speed of the photodiode can be improved;
光电二极管的正极和N-衬底是相连的，光电二极管实际上是N-衬底和P-注入形成的PN结二极管，通过对P-注入推进的结深的调节和注入浓度的调节，达到光电二极管光电转换效率的最大化；The positive electrode of the photodiode is connected to the N-substrate. The photodiode is actually a PN junction diode formed by the N-substrate and the P-injection. The photoelectric conversion efficiency of the photodiode can be maximized by adjusting the junction depth and injection concentration of the P-injection.
本发明旨在解决现有技术的数据传输速率偏低的缺点，提出一种适合高传输速率的光电二极管的实现方法，一方面减小光电二极管的寄生电容，同时提高光电二极管的光电转换效率，相比现有技术，相同面积的光电二极管，光敏电流提升至原来的二倍，而寄生电容不到二分之一，从而把数据传输速率大大提升；The present invention aims to solve the disadvantage of low data transmission rate in the prior art, and proposes a method for realizing a photodiode suitable for high transmission rate, which reduces the parasitic capacitance of the photodiode and improves the photoelectric conversion efficiency of the photodiode. Compared with the prior art, the photodiode of the same area has a photosensitive current increased to twice the original, while the parasitic capacitance is less than half, thereby greatly improving the data transmission rate;
本发明提高光电二极管的光电转换效率，相比现有技术，相同面积的光电二极管，光敏电流提升至原来的二倍，本发明的光电二极管应用于光纤收发电路，形成高灵敏度、高传输速率的光纤收发电路，保证收发端较远时不出现误码，满足各种高品质音响要求；利用本发明技术，可以达到传输速率25Mbit/S时，光纤接收灵敏度提高至-30dB，传输速率若降低至13.2Mbit/S时，光纤接收灵敏度可提高至至-33dB。The present invention improves the photoelectric conversion efficiency of the photodiode. Compared with the prior art, the photosensitive current of the photodiode of the same area is increased to twice the original. The photodiode of the present invention is applied to the optical fiber transceiver circuit to form an optical fiber transceiver circuit with high sensitivity and high transmission rate, ensuring that no bit errors occur when the transceiver end is far away, and meeting various high-quality audio requirements. By using the technology of the present invention, when the transmission rate is 25Mbit/S, the optical fiber receiving sensitivity is increased to -30dB. If the transmission rate is reduced to 13.2Mbit/S, the optical fiber receiving sensitivity can be increased to -33dB.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是现有技术中信号流的示意图。FIG. 1 is a schematic diagram of a signal flow in the prior art.
图2是现有技术中光电二极管的结构示意图。FIG. 2 is a schematic diagram of the structure of a photodiode in the prior art.
图3是本发明实施例提供的一种光纤接收电路的高传输速率的光电二极管的结构示意图。FIG3 is a schematic diagram of the structure of a photodiode with a high transmission rate in an optical fiber receiving circuit provided by an embodiment of the present invention.
图4是本发明实施例提供的一种光纤接收电路的高传输速率的光电二极管的工艺方法的流程示意图。FIG. 4 is a schematic flow chart of a process for producing a photodiode with a high transmission rate in an optical fiber receiving circuit provided by an embodiment of the present invention.
图5是光的反射现象示意图。FIG. 5 is a schematic diagram of the light reflection phenomenon.
图6是本发明实施例提供的一种光纤接收电路的高传输速率的光电二极管的工艺方法的示意图。FIG. 6 is a schematic diagram of a process for producing a photodiode with a high transmission rate in an optical fiber receiving circuit provided by an embodiment of the present invention.
图中：In the figure:
1.N型衬底2.多晶透光层3.N+区4.P-区5.P+区1. N-type substrate 2. Polycrystalline light-transmitting layer 3. N+ region 4. P- region 5. P+ region
A.光电二极管的正极B.光电二极管的负极A. Anode of photodiode B. Cathode of photodiode
具体实施方式DETAILED DESCRIPTION
为使本发明实施方式的目的、技术方案和优点更加清楚，下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式是本发明一部分实施方式，而不是全部的实施方式。因此，以下对在附图中提供的本发明的实施方式的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施方式。基于本发明中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents the selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.
应当明白，当元件或层被称为“在...上”、“与...相邻”、“连接到”或“耦合到”其它元件或层时，其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层，或者可以存在居间的元件或层。相反，当元件被称为“直接在...上”、“与...直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时，则不存在居间的元件或层。应当明白，尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层和/或部分，这些元件、部件、区、层和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层或部分与另一个元件、部件、区、层或部分。因此，在不脱离本申请教导之下，下面讨论的第一元件、部件、区、层或部分可表示为第二元件、部件、区、层或部分。It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and/or parts, these elements, components, regions, layers and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.
在本发明的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
参照图3所示，一种光纤接收电路的高传输速率的光电二极管，包括：N型衬底1；N+区3，所述N型衬底1上部的两侧分别注入形成所述N+区3，在所述N+区3开接触孔引出光电二极管的正极；P-区4，在所述N型衬底1上注入形成所述P-区4，所述P-区4位于相邻所述N+区3之间，所述N型衬底1和所述P-区4之间形成PN结；P+区5，在所述P-区4内注入形成所述P+区5，所述P+区5与所述P-区4之间形成欧姆接触；在所述P+区5开接触孔引出光电二极管的负极；多晶透光层2，所述多晶透光层2设置于所述P-区4的上方。3 , a photodiode with a high transmission rate for an optical fiber receiving circuit comprises: an N-type substrate 1; an N+ region 3, wherein the N+ region 3 is formed by injection at both sides of the upper portion of the N-type substrate 1, and a contact hole is opened in the N+ region 3 to lead out the positive electrode of the photodiode; a P- region 4, wherein the P- region 4 is formed by injection on the N-type substrate 1, wherein the P- region 4 is located between adjacent N+ regions 3, and a PN junction is formed between the N-type substrate 1 and the P- region 4; a P+ region 5, wherein the P+ region 5 is formed by injection in the P- region 4, and an ohmic contact is formed between the P+ region 5 and the P- region 4; a contact hole is opened in the P+ region 5 to lead out the negative electrode of the photodiode; and a polycrystalline light-transmitting layer 2, wherein the polycrystalline light-transmitting layer 2 is disposed above the P- region 4.
所述N型衬底1材料的电阻率为10-100ohm-cm。The resistivity of the N-type substrate 1 material is 10-100 ohm-cm.
所述P-区4的注入材料为B离子，注入剂量为1E13-1E14，注入能量为10KeV-100KeV。The implantation material of the P-region 4 is B ions, the implantation dose is 1E13-1E14, and the implantation energy is 10KeV-100KeV.
所述P-区4的注入推进结深为3um-6um。The implantation driving junction depth of the P-region 4 is 3um-6um.
所述P-区4的顶端设置有光敏面，所述多晶透光层2的厚度为100nm-400nm。A photosensitive surface is disposed on the top of the P-region 4, and the thickness of the polycrystalline light-transmitting layer 2 is 100nm-400nm.
因为高传输速率的要求，光电二极管的PN结面积被限制不能做太大，需要尽可能增大光电二极管的光电转换效率以保证高接收灵敏度，本技术方案中，采用低浓度P-注入，并且对低浓度注入推结深，这个PN结深控制在3um-6um，较低的掺杂浓度和较深的结深，能有效地降低光子的表面复合，因而增大光电二极管的光电转换效率。Due to the requirement of high transmission rate, the PN junction area of the photodiode is limited and cannot be made too large. It is necessary to increase the photoelectric conversion efficiency of the photodiode as much as possible to ensure high receiving sensitivity. In this technical solution, low-concentration P-injection is used, and the junction depth is pushed for low-concentration injection. The PN junction depth is controlled at 3um-6um. The lower doping concentration and deeper junction depth can effectively reduce the surface recombination of photons, thereby increasing the photoelectric conversion efficiency of the photodiode.
光电二极管的正极和N-衬底是相连的，光电二极管实际上是N-衬底和P-区形成的PN结二极管，通过对P-区注入推进的结深的调节和注入浓度的调节，达到光电二极管光电转换效率的最大化。The positive electrode of the photodiode is connected to the N-substrate. The photodiode is actually a PN junction diode formed by the N-substrate and the P-region. The photoelectric conversion efficiency of the photodiode can be maximized by adjusting the junction depth and injection concentration of the P-region injection.
参照图4和图6所示，一种光纤接收电路的高传输速率的光电二极管的工艺方法，包括：形成N型衬底；在所述N型衬底上部的两侧分别注入形成N+区；在所述N+区开接触孔引出光电二极管的正极；在所述N型衬底上注入形成P-区，所述P-区位于相邻所述N+区之间，所述N型衬底和所述P-区之间形成PN结；在所述P-区内注入形成P+区，所述P+区与所述P-区之间形成欧姆接触；在所述P+区开接触孔引出光电二极管的负极；在所述N型衬底的上方设置多晶透光层。4 and 6, a process method for a photodiode with a high transmission rate in an optical fiber receiving circuit includes: forming an N-type substrate; injecting N+ regions on both sides of the upper portion of the N-type substrate; opening a contact hole in the N+ region to lead out the positive electrode of the photodiode; injecting a P- region on the N-type substrate, the P- region is located between adjacent N+ regions, and a PN junction is formed between the N-type substrate and the P- region; injecting a P+ region in the P- region, and an ohmic contact is formed between the P+ region and the P- region; opening a contact hole in the P+ region to lead out the negative electrode of the photodiode; and arranging a polycrystalline light-transmitting layer above the N-type substrate.
本发明中，在光电二极管的光敏面上，淀积了一层多晶，多晶是透明介质层，多晶的厚度精确控制，使光电二极管表面形成一层增透膜。In the present invention, a layer of polycrystal is deposited on the photosensitive surface of the photodiode. The polycrystal is a transparent medium layer. The thickness of the polycrystal is precisely controlled to form an anti-reflection film on the surface of the photodiode.
多晶透光层的制备方法，包括：在光敏二极管表面覆盖一层厚度可以精确控制的透光层，透光层的材料为多晶(poly)；把光电二极管的光敏面上覆盖的保护层去除，该保护层一般为二氧化硅(SiO2)；淀积多晶透光层，多晶透光层厚度为100nm-400nm；去除光敏面以外的多晶透光层；在光敏面上形成一层一致性好、厚度可精确控制的多晶透光层。The preparation method of a polycrystalline light-transmitting layer comprises: covering a light-transmitting layer with a precisely controlled thickness on the surface of a photodiode, wherein the material of the light-transmitting layer is polycrystalline (poly); removing a protective layer covering the photosensitive surface of the photodiode, wherein the protective layer is generally silicon dioxide (SiO2); depositing a polycrystalline light-transmitting layer, wherein the thickness of the polycrystalline light-transmitting layer is 100nm-400nm; removing the polycrystalline light-transmitting layer outside the photosensitive surface; and forming a polycrystalline light-transmitting layer with good consistency and precisely controlled thickness on the photosensitive surface.
参照图5所示，光在介质层中会有一个入射和反射的过程，介质层的厚度决定了入射光的反射率，在本发明的技术方案中，反射率越小，表明光电二极管能接收到的光功率越大，要避免半波全反射的现象出现。As shown in Figure 5, light will have an incident and reflected process in the dielectric layer. The thickness of the dielectric layer determines the reflectivity of the incident light. In the technical solution of the present invention, the smaller the reflectivity, the greater the light power that the photodiode can receive, and the phenomenon of half-wave total reflection must be avoided.
本发明旨在解决现有技术的数据传输速率偏低的缺点，提出一种适合高传输速率的光电二极管的实现方法，一方面减小光电二极管的寄生电容，同时提高光电二极管的光电转换效率，相比现有技术，相同面积的光电二极管，光敏电流提升至原来的二倍，而寄生电容不到二分之一，从而把数据传输速率大大提升。The present invention aims to solve the shortcoming of low data transmission rate in the prior art and proposes a method for realizing a photodiode suitable for high transmission rate. On the one hand, the parasitic capacitance of the photodiode is reduced and at the same time the photoelectric conversion efficiency of the photodiode is improved. Compared with the prior art, for photodiodes of the same area, the photosensitive current is increased to twice the original, while the parasitic capacitance is less than one half, thereby greatly improving the data transmission rate.
本发明技术能实现一种高传输速率的光纤音频接收电路，传输速率可高至25Mbit/s，能广泛地应用于多媒体音响系统，数码照相机、摄像机、监控系统，高清影音播放系统、MD播放器，网络电视、数字电视、卫星电视，电视、宽带网、通讯网系统，3D、4D高清数字影院，数字成像系统，汽车、飞机、轮船等多媒体娱乐系统。The technology of the present invention can realize a high transmission rate optical fiber audio receiving circuit, the transmission rate can be as high as 25Mbit/s, and can be widely used in multimedia audio systems, digital cameras, video cameras, monitoring systems, high-definition audio and video playback systems, MD players, Internet TV, digital TV, satellite TV, TV, broadband network, communication network system, 3D, 4D high-definition digital cinema, digital imaging system, automobile, airplane, ship and other multimedia entertainment systems.
在信号传输中，影响到传输速率的最大因素是寄生电容，寄生电容越大，传输速率越小。在本技术方案中，音频信号加载到红光，通过光纤传输至信号接收端，接收端接受红光信号后，通过一个光电二极管把光信号转换成电信号，光电二极管是一个PN结形成的二极管，PN结在外加电场时，会有势垒电容也就是寄生电容存在，势垒电容值的大小与PN结面积成正比，而PN结面积同时又决定了光电二极管的信号接收灵敏度，减小PN结面积，会降低接收灵敏度。In signal transmission, the biggest factor affecting the transmission rate is parasitic capacitance. The larger the parasitic capacitance, the lower the transmission rate. In this technical solution, the audio signal is loaded into red light and transmitted to the signal receiving end through optical fiber. After the receiving end receives the red light signal, it converts the optical signal into an electrical signal through a photodiode. The photodiode is a diode formed by a PN junction. When the PN junction is in an external electric field, there will be a barrier capacitance, that is, a parasitic capacitance. The value of the barrier capacitance is proportional to the PN junction area, and the PN junction area also determines the signal receiving sensitivity of the photodiode. Reducing the PN junction area will reduce the receiving sensitivity.
在本技术方案中，考虑到兼容其它电路模块如信号反馈放大电路、滤波电路、高速比较器电路等，因此采用了在CMOS集成电路工艺的基础上，增加两个工艺步骤，改进后的光电二极管结构如图3所示。In this technical solution, considering compatibility with other circuit modules such as signal feedback amplifier circuit, filter circuit, high-speed comparator circuit, etc., two process steps are added on the basis of CMOS integrated circuit process. The improved photodiode structure is shown in Figure 3.
和图1所示的现有的光电二极管相比，本发明采用了N型衬底，光电二极管直接在衬底上推低浓度的P-注入，光电二极管的PN结的势垒电容在N衬底和低浓度P-注入之间产生，对比图1，现有技术的光电二极管的PN结势垒电容在NWELL和高浓度P注入之间产生，采用这种光电二极管结构的好处有：PN结的势垒电容除了与PN结面积成正比，与P和N的掺杂浓度成反比，即掺杂浓度越低，势垒电容越小，由于N型衬底的浓度比NWELL低很多，低浓度P-注入相对高浓度P注入掺杂浓度也淡很多，因此采用本方案所示的光电二极管在相同的PN结面积下，势垒电容小很多，能满足高传输速率的要求。Compared with the existing photodiode shown in Figure 1, the present invention adopts an N-type substrate, and the photodiode directly pushes a low-concentration P-injection on the substrate. The barrier capacitance of the PN junction of the photodiode is generated between the N substrate and the low-concentration P-injection. Compared with Figure 1, the PN junction barrier capacitance of the photodiode in the prior art is generated between NWELL and the high-concentration P injection. The advantages of using this photodiode structure are: the barrier capacitance of the PN junction is not only proportional to the PN junction area, but also inversely proportional to the doping concentrations of P and N, that is, the lower the doping concentration, the smaller the barrier capacitance. Since the concentration of the N-type substrate is much lower than that of NWELL, the doping concentration of the low-concentration P-injection is also much lighter than that of the high-concentration P injection. Therefore, the barrier capacitance of the photodiode shown in this scheme is much smaller under the same PN junction area, which can meet the requirements of high transmission rate.
本发明采用的工艺平台是N型衬底、P阱工艺；采用了N型衬底，光电二极管直接在衬底上推低浓度的P-注入，P-注入的浓度较小、结深较大，因而能减小PN结的势垒电容，提高光电二极管的光电响应速度；The process platform adopted by the present invention is an N-type substrate and a P-well process; the N-type substrate is adopted, and the photodiode directly pushes a low-concentration P-injection on the substrate. The concentration of the P-injection is small and the junction depth is large, so the barrier capacitance of the PN junction can be reduced and the photoelectric response speed of the photodiode can be improved;
本发明提高光电二极管的光电转换效率，相比现有技术，相同面积的光电二极管，光敏电流提升至原来的二倍，本发明的光电二极管应用于光纤收发电路，形成高灵敏度、高传输速率的光纤收发电路，保证收发端较远时不出现误码，满足各种高品质音响要求；利用本发明技术，可以达到传输速率25Mbit/S时，光纤接收灵敏度提高至-30dB，传输速率若降低至13.2Mbit/S时，光纤接收灵敏度可提高至至-33dB。The present invention improves the photoelectric conversion efficiency of the photodiode. Compared with the prior art, the photosensitive current of the photodiode of the same area is increased to twice the original. The photodiode of the present invention is applied to the optical fiber transceiver circuit to form an optical fiber transceiver circuit with high sensitivity and high transmission rate, ensuring that no bit errors occur when the transceiver end is far away, and meeting various high-quality audio requirements. By using the technology of the present invention, when the transmission rate is 25Mbit/S, the optical fiber receiving sensitivity is increased to -30dB. If the transmission rate is reduced to 13.2Mbit/S, the optical fiber receiving sensitivity can be increased to -33dB.
以上实施例仅用以解释说明本发明的技术方案而非对其限制。本领域技术人员应当理解，未脱离本发明精神和范围的任何修改和等同替换，均应落入本发明权利要求的保护范围中。The above embodiments are only used to explain the technical solutions of the present invention rather than to limit them. Those skilled in the art should understand that any modification and equivalent substitution that does not depart from the spirit and scope of the present invention should fall within the protection scope of the claims of the present invention.
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