CN117305814A - Jig for normal pressure chemical vapor deposition and use method thereof - Google Patents

Abstract

The invention relates to the technical field of quartz jigs, in particular to a jig for normal pressure chemical vapor deposition and a use method thereof; a jig for normal pressure chemical vapor deposition comprises at least one edge arranged on the jig; the jig contacts with the silicon chip through the edge; the application method of the jig for normal pressure chemical vapor deposition comprises the steps of; the device comprises a fixture fixedly arranged in membrane surface contact equipment; placing a silicon wafer in a film surface contact type device; placing the silicon wafer on a jig through a manipulator, so that the jig contacts the silicon wafer through edges; vacuum adsorbing silicon wafer by tray and depositing SiO on the silicon wafer based on chemical vapor deposition method ₂ A film; the method improves the chromatic aberration problem caused by contact between the silicon wafer and the quartz jig; the quality of the silicon wafer is improved, and the influence of the epitaxial self-doping phenomenon on the performance of the device is reduced; the contact between the jig and the silicon wafer is changed from surface contact to line contact by designing the jigSo as to improve the appearance quality and the device performance of the silicon wafer.

Description

A kind of fixture for atmospheric pressure chemical vapor deposition and its use method

Technical field

The present invention relates to the technical field of quartz fixtures, and specifically to a fixture for atmospheric pressure chemical vapor deposition and a method of using the same.

Background technique

In order to suppress the self-doping phenomenon, the atmospheric pressure chemical vapor deposition (APCVD) method is often used to deposit a SiO2 film on the back of the silicon wafer. APCVD equipment mainly includes crawler type and pallet type. The crawler-type equipment places the silicon wafer on the crawler belt through a robot, and the membrane surface of the silicon wafer does not contact any fixture. Tray-type equipment is divided into membrane surface non-contact type and membrane surface contact type. The film surface non-contact equipment places the silicon wafer on the tray through a robot, and the film surface of the silicon wafer does not contact any fixture. The membrane surface contact equipment places the silicon wafer on a quartz jig using a robot so that the silicon wafer comes into contact with the quartz jig, and then vacuums the silicon wafer onto the tray.

However, there is a problem in the use of film surface contact equipment in the existing technology, that is, color difference will occur where the silicon wafer contacts the quartz fixture. This is an unexpected result and needs to be improved. Chromatic aberration affects the appearance quality of silicon wafers and may adversely affect device performance. Therefore, it is necessary to improve the existing technology to solve the problem of chromatic aberration and improve the quality of silicon wafer epitaxy.

Contents of the invention

In view of the above-mentioned problems existing in the prior art, the present invention provides a fixture for atmospheric pressure chemical vapor deposition and a method of using the same.

In order to solve the above technical problems, the present invention is solved through the following technical solutions:

In a first aspect, a fixture for atmospheric pressure chemical vapor deposition is provided, which includes:

At least one edge is provided on the jig;

The fixture is in contact with the silicon wafer through the edge.

Preferably, the jig is provided with a first inclined surface, and the side of the first inclined surface forms the edge.

Preferably, the jig is provided with a second inclined surface that is tangent to the first inclined surface, and the tangent edge of the first inclined surface and the second inclined surface forms the edge.

Preferably, the fixture is fixed on the membrane surface contact device by adhesion or adsorption.

Preferably, the fixture is provided with a fixing hole for fixing the fixture to the membrane surface contact device.

Preferably, the fixing hole is a threaded hole or a snap hole.

In a second aspect, a method for using a fixture for atmospheric pressure chemical vapor deposition is provided, including the above fixture; specifically, it includes:

Fixed installation of the fixture in the membrane surface contact equipment;

Place a silicon wafer in the membrane surface contact device;

The silicon wafer is placed on the jig by a robot so that the jig contacts the silicon wafer through the edge;

The silicon wafer is vacuum-adsorbed by a tray, and a _SiO2 film is deposited on the silicon wafer based on a chemical vapor deposition method.

The present invention at least has the following beneficial effects:

1. This application improves the color difference problem caused by the contact between the silicon wafer and the quartz fixture.

2. This application improves the quality of silicon wafers and reduces the impact of epitaxial self-doping on device performance.

3. This application designs the fixture so that the contact with the silicon wafer is changed from surface contact to line contact to improve the appearance quality and device performance of the silicon wafer.

Description of drawings

Figure 1 is a schematic diagram of the structure of a fixture and its contact with a silicon wafer in the prior art;

Figure 2 is a top view of the jig of the first structure in this application;

Figure 3 is a front perspective view of the jig of the first structure in the present application;

Figure 4 is a schematic diagram of the first structure of the jig in contact with the silicon wafer in this application;

Figure 5 is a perspective view of the second structure of the jig in the present application;

Figure 6 is a flow chart of the method of using the fixture for atmospheric pressure chemical vapor deposition in this application.

The names of the parts designated by each number in the drawings are as follows:

110. Jig; 111. First bevel; 112. Second bevel; 113. Fixing hole; 120. Silicon wafer; 130. Edge.

Detailed ways

In order to further understand the content of the present invention, the present invention will be described in detail with reference to the accompanying drawings and embodiments. It should be understood that the embodiments are only for explanation of the present invention but not for limitation.

As shown in Figures 2-5, in the first aspect, this embodiment provides a fixture 110 for atmospheric pressure chemical vapor deposition, which includes:

At least one edge 130 is provided on the jig 110;

The fixture 110 is in contact with the silicon wafer 120 through the edge 130 .

The fixture 110 in this embodiment is used in the atmospheric pressure chemical vapor deposition process. Specifically, the fixture 110 in this embodiment is made of quartz material; in this embodiment, a film surface contact chemical vapor deposition equipment is used. Taking an example as a specific explanation, the film surface contact chemical vapor deposition equipment is hereinafter referred to as the film surface contact type equipment.

The film surface contact equipment is equipped with a robot arm and a tray for use in the chemical vapor deposition process.

As shown in Figure 1, currently, in order to suppress the self-doping phenomenon, the atmospheric pressure chemical vapor deposition method is often used to deposit a layer of SiO2 film on the back of the silicon wafer 120. Specifically, the film surface contact equipment uses a robot to deposit the silicon wafer 120. Place the silicon wafer 120 on the jig 110 so that the silicon wafer 120 is in contact with the jig 110, and then adsorb the silicon wafer 120 to the tray through vacuum. Then, under normal pressure, use chemical vapor deposition to form a layer on the back of the silicon wafer 120. A layer of SiO2 film is deposited. However, in the silicon wafer 120 produced under this process, the color difference between the place where the silicon wafer 120 contacts the jig 110 and other parts of the silicon wafer 120 will affect the quality of the silicon wafer 120 .

Through the structure of the jig 110 in this embodiment, an edge 130 is provided on the jig 110. After the jig 110 is installed on the membrane surface contact device, the edge 130 is the highest point of the jig 110, and the robot hand When the silicon wafer 120 is placed on the jig 110, the bottom surface of the silicon wafer 120 is in contact with the edge 130, so that the original surface contact between the silicon wafer 120 and the jig 110 is changed to a line contact. Finally, the tray vacuum absorbs the silicon wafer. 120 and deposit a layer of SiO2 thin film on the back of the silicon wafer 120 through the chemical vapor deposition method. The silicon wafer 120 produced by this process can significantly improve the color difference problem caused by the contact between the silicon wafer 120 and the fixture 110, and improve the silicon wafer. The appearance quality and device performance of 120 can further improve the quality of silicon wafer 120 and reduce the impact of epitaxial self-doping on device performance.

Further, at least one edge 130 is provided on the jig 110, and the following relationship exists between the plurality of edges 130:

Relationship 1. Multiple edges 130 are on the same straight line, and the bottom surface of the silicon wafer 120 is in contact with multiple edges 130 at the same time;

Relationship 2: Multiple edges 130 are parallel to each other, and the bottom surface of the silicon wafer 120 is only in contact with one edge 130;

Relationship 3: Multiple edges 130 intersect, and the bottom surface of the silicon wafer 120 is in contact with at least one edge 130 .

It should be noted that the edge 130 in this embodiment also includes a straight line or a curve formed by connecting at least two points. Specifically, two cones can be set on the jig 110, and the vertices of the two cones can be At the same height, the line connecting the vertices of the two cones forms an edge 130, and the bottom surface of the silicon wafer 120 is in contact with the edge 130.

In this embodiment, the jig 110 is provided with a first inclined surface 111 , and the side of the first inclined surface 111 forms the edge 130 .

In this embodiment, a first bevel 111 is provided on the top of the jig 110. Specifically, the first bevel 111 is formed on the top of the jig 110 by cutting. The first bevel 111 is sandwiched between the bottom surface of the jig 110 and the bottom surface of the jig 110. Angle setting, that is, after the jig 110 is installed on the membrane surface contact equipment, one side of the first slope 111 is the highest position of the jig 110 as the edge 130, and the jig 110 passes through this edge 130 and The silicon wafers 120 are in contact, thereby realizing line contact between the jig 110 and the silicon wafer 120 , which can better improve the color difference problem on the silicon wafer 120 .

In this embodiment, the jig 110 is provided with a second inclined surface 112 that is tangent to the first inclined surface 111 , and the tangent edge of the first inclined surface 111 and the second inclined surface 112 forms the edge 130 .

In this embodiment, a second bevel 112 is provided on the top of the jig 110. Specifically, the second bevel 112 is formed on the top of the jig 110 by cutting, and the second bevel 112 is tangent to the first bevel 111. Cut the edge. After the jig 110 is installed on the film surface contact device, the highest position of the jig 110 is used as the edge 130. The jig 110 contacts the silicon wafer 120 through the edge 130, thereby also Line contact between the fixture 110 and the silicon wafer 120 can be achieved, and the color difference problem on the silicon wafer 120 can be better improved.

It can be understood that the number of the above-mentioned first inclined plane 111 and the second inclined plane 112 can be provided in multiple numbers, and not only the first inclined plane 111 and the second inclined plane 112 can be arranged to be tangent, but also the first inclined plane 111 can be arranged to be tangent to the second inclined plane 112 . One inclined plane 111 is tangent to the second inclined plane 112 and the second inclined plane 112 is tangent to the second inclined plane 112 .

In this embodiment, the fixture 110 is fixed on the membrane surface contact device by adhesion or adsorption.

It should be noted that in a preferred embodiment of the present application, the jig 110 can be fixedly installed on the membrane surface contact equipment for use by bonding or vacuum adsorption, thereby ensuring the stability of the position of the jig 110. This prevents the position of the fixture 110 from shaking during the chemical vapor deposition process.

In this embodiment, the fixture 110 is provided with a fixing hole 113 for fixing the fixture 110 to the membrane surface contact device.

As shown in Figures 2-5, in this embodiment, the fixture 110 is provided with a fixing hole 113. Specifically, the fixing hole 113 can be provided on the first inclined surface 111 and/or the second inclined surface 112 and/or the fixture 110 At other locations, in this embodiment, the fixing hole 113 is opened on the first inclined surface 111 .

Through the fixing holes 113 in this embodiment, the fixture 110 can be preferably fixedly installed on the membrane surface contact device.

In this embodiment, the fixing hole 113 is a threaded hole or a snap hole.

It should be noted that the fixing holes 113 provided on the jig 110 may be threaded holes or clamping holes.

When the fixing hole 113 is a threaded hole, the membrane surface contact device is provided with a positioning hole, which is also a threaded hole, and the fixture 110 is fixedly installed on the membrane surface contact device through the cooperation of bolts and threaded holes;

When the fixing hole 113 is a snap hole, the fixture 110 is snap-connected to the membrane surface contact device;

In this embodiment, the fixing hole 113 is a threaded hole, and the fixture 110 is fixed and installed on the membrane surface contact device through bolts.

As shown in FIG. 6 , in a second aspect, this embodiment provides a method of using a jig 110 for atmospheric pressure chemical vapor deposition, including the above jig 110; specifically, it includes:

Step S101: Fixedly install the fixture 110 in the membrane surface contact equipment;

Step S102: Place the silicon wafer 120 in the membrane contact device;

Step S103: Place the silicon wafer 120 on the jig 110 with a robot, so that the jig 110 contacts the silicon wafer 120 through the edge 130;

Step S104: The silicon wafer 120 is vacuum-adsorbed on a tray, and a SiO ₂ film is deposited on the silicon wafer 120 based on a chemical vapor deposition method.

In this embodiment, after the SiO ₂ film is deposited on the silicon wafer 120, the tray re-places the silicon wafer 120 on the jig 110, and the robot grabs the silicon wafer 120 for recycling.

In short, the above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made in accordance with the patent application scope of the present invention shall fall within the scope of the patent of the present invention.

Claims (7)

1. A jig for normal pressure chemical vapor deposition is characterized in that: comprising the steps of (a) a step of,

at least one edge arranged on the jig;

the jig is contacted with the silicon chip through the edge.

2. The jig for atmospheric chemical vapor deposition according to claim 1, wherein: the jig is provided with a first inclined plane, and the side edge of the first inclined plane forms the edge.

3. The jig for atmospheric chemical vapor deposition according to claim 2, wherein: the jig is provided with a second inclined plane tangential to the first inclined plane, and the edge is formed by the first inclined plane and the edge cutting of the second inclined plane.

4. A jig for atmospheric pressure chemical vapor deposition according to any one of claims 1 to 3, wherein: the jig is fixed on the membrane surface contact type equipment in an adhesion or adsorption mode.

5. A jig for atmospheric pressure chemical vapor deposition according to any one of claims 1 to 3, wherein: the fixture is provided with a fixing hole for fixing the fixture on the membrane surface contact type equipment.

6. The jig for atmospheric chemical vapor deposition according to claim 5, wherein: the fixing holes are threaded holes or clamping holes.

7. The application method of the jig for normal pressure chemical vapor deposition is characterized by comprising the following steps of: comprising the jig of any one of claims 1-6; in particular to the preparation method of the composite material,

the jig is fixedly arranged in the membrane surface contact type equipment;

placing a silicon wafer in the film surface contact type equipment;

placing the silicon wafer on the jig through a manipulator so that the jig contacts the silicon wafer through the edge;

vacuum adsorbing the silicon wafer by a tray, and depositing SiO (silicon oxide) on the silicon wafer based on a chemical vapor deposition method ₂ A film.