CN117289495A - Phase modulator using composite strain silicon nitride and composite strain germanium silicide in silicon photonics system - Google Patents
Phase modulator using composite strain silicon nitride and composite strain germanium silicide in silicon photonics system Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 190
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 190
- 239000010703 silicon Substances 0.000 title claims abstract description 190
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 56
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000002131 composite material Substances 0.000 title claims abstract description 45
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims abstract description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 111
- 238000000034 method Methods 0.000 claims abstract description 85
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 238000005516 engineering process Methods 0.000 claims abstract description 70
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000000407 epitaxy Methods 0.000 claims abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 20
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 5
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a phase modulator using composite strain silicon nitride and composite strain germanium silicide in a silicon photonics system, which relates to the technical field of semiconductors and comprises an integrated optical path, wherein the integrated optical path is provided with a silicon chip; setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path; setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology; setting a strain silicide-germanide layer on the P-type silicon layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology; setting medium insulating layer on the strain silicide germanium layer by semiconductor process technology on the integrated optical path; setting a strain silicon nitride layer on the intermediate insulating layer by using a semiconductor manufacturing technology on an integrated optical path; setting N-type silicon layer on the strain silicon nitride layer by using epitaxy process on the integrated optical path by using semiconductor process technology; the strained germanosilicide layer and the strained silicon nitride layer will enhance the refractive index change more to enhance the phase modulation of the light wave.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a phase modulator applying composite strain silicon nitride and composite strain germanium silicide in a silicon photonics system.
Background
Silicon photons, siPH, are designed and fabricated by semiconductor processes, including integrated circuit (EIC) Portions and Integrated Circuit (PIC) portions. Is a necessary requirement for new generation microwave communication, huge data center and AI high-speed operation. In silicon photonic devices, the electro-optic modulator modulates phase and amplitude by changing optical refractive index and absorption coefficient in the silicon waveguide by driving a voltage.
The plasma dispersion effect is mostly used for high-speed silicon modulators, and the refractive index change effect induced by the plasma dispersion is as shown in formula (1):
∆n=-(e 2 λ 2 /8π 2 c 2 ε 0 n)[∆N e /m* ce +∆N h /m* ch ]①
wherein e is an electron charge, ε 0 Is the dielectric constant in vacuum, c is the speed of light in vacuum, lambda is the wavelength, n is the undisturbed refractive index, m ce And m is ch Is the conductivity effective mass of electrons and holes, fatn e And N is equal to h For concentration variations of electrons and holes, however, the electro-optic modulators of the prior art have the following drawbacks: the change in refractive index is so small that the amplitude of the phase modulation of the light wave is not so pronounced that a new design is proposed to ameliorate the above problems.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a technical scheme capable of solving the problems.
A phase modulator using composite strain silicon nitride and composite strain germanium silicide in a silicon photonics system comprises an integrated optical circuit, wherein the integrated optical circuit is provided with a silicon chip;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting a strain silicide-germanide layer on the P-type silicon layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting medium insulating layer on the strain silicide germanium layer by semiconductor process technology on the integrated optical path;
setting a strain silicon nitride layer on the intermediate insulating layer by using a semiconductor manufacturing technology on an integrated optical path;
setting N-type silicon layer on the strain silicon nitride layer by using epitaxy process on the integrated optical path by using semiconductor process technology;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
As a further scheme of the invention: a semiconductor process technology is used on an integrated optical path, and a plurality of strained SiGe layers and P-type silicon layers are arranged in an epitaxial process.
As a further scheme of the invention: a semiconductor process technology is used on an integrated optical path, and a plurality of strained silicon nitride layers and N-type silicon layers are arranged in an epitaxial process.
As a further scheme of the invention: the intermediate insulating layer is of a sandwich structure and is made of silicon oxide, aluminum oxide, zirconium oxide or hafnium oxide materials.
As a further scheme of the invention: the P-type silicon layer and the polysilicon layer are respectively extended with a power connection part, and the bias voltage is electrically connected with the power connection parts.
As a further scheme of the invention: the thickness of the silicon oxide layer is 120nm-200nm.
As a further scheme of the invention: the thickness of the P-type silicon layer is 100nm-200nm.
As a further scheme of the invention: the strained SiGe layer has a thickness of 10nm-25nm.
As a further scheme of the invention: the thickness of the intermediate insulating layer is 2nm-10nm.
As a further scheme of the invention: the thickness of the strained silicon nitride layer is 8nm-20nm.
As a further scheme of the invention: the thickness of the N-type silicon layer is 100nm-200nm.
As a further scheme of the invention: the thickness of the polysilicon layer is 100nm-200nm.
The invention also provides a phase modulator using the composite strain silicon nitride in the silicon photonics system, which comprises an integrated optical circuit, wherein the integrated optical circuit is provided with a silicon chip;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
an intermediate insulating layer is arranged on the P-type silicon layer by using a semiconductor manufacturing technology on an integrated optical path;
setting a strain silicon nitride layer on the intermediate insulating layer by using a semiconductor manufacturing technology on an integrated optical path;
setting N-type silicon layer on the strain silicon nitride layer by using epitaxy process on the integrated optical path by using semiconductor process technology;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
The invention also provides a phase modulator using the composite strain germanium silicide in the silicon photonics system, which comprises an integrated optical circuit, wherein the integrated optical circuit is provided with a silicon chip;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting a strain silicide-germanide layer on the P-type silicon layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting medium insulating layer on the strain silicide germanium layer by semiconductor process technology on the integrated optical path;
an N-type silicon layer is arranged on the intermediate insulating layer by using a semiconductor processing technology on the integrated optical path and an epitaxial process;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a phase modulator using composite strain silicon nitride and composite strain germanium silicide in a silicon photonics system, wherein a strain germanium silicide layer is arranged on a P-type silicon layer by an epitaxial process, the strain germanium silicide layer has strain force acting on the P-type silicon layer, the effective mass of electrons is reduced, the refractive index of the P-type silicon layer is increased, and the change of the refractive index is enhanced by the strain germanium silicide layer so as to enhance the phase modulation of light waves; an N-type silicon layer is arranged on the strained silicon nitride layer by an epitaxial process, the strained silicon nitride layer has a strain force acting on the N-type silicon layer, the effective mass of electrons is reduced, the refractive index of the N-type silicon layer is increased, and the strained silicon nitride layer can strengthen the change of the refractive index more so as to strengthen the phase modulation of light waves.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a spectral diagram of the present invention;
FIG. 3 is a graph of optical transmission rate versus wavelength for the present invention;
FIG. 4 is a graph of the refractive index induced phase change of the present invention;
FIG. 5 is a schematic view of the structure of embodiment 1 of the present invention;
FIG. 6 is a schematic structural view of embodiment 2 of the present invention;
reference numerals and names in the drawings are as follows:
1. a silicon wafer; 2. a silicon oxide layer; 3. a P-type silicon layer; 4. a strained germanium silicide layer; 5. an intermediate insulating layer; 6. a strained silicon nitride layer; 7. an N-type silicon layer; 8. a polysilicon layer; 9. and a power connection part.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, in an embodiment of the present invention, a phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system includes an integrated optical circuit, where the integrated optical circuit includes the following steps:
s1, a silicon wafer 1 is arranged on an integrated optical path as a base layer;
s2, arranging a silicon oxide layer 2 (SiO 2) on the silicon wafer 1 by using a semiconductor processing technology on an integrated optical path;
s3, setting a P-type silicon layer 3 on the silicon oxide layer 2 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s4, setting a strain silicide germanium layer 4 on the P-type silicon layer 3 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s5, setting a plurality of strained SiGe layers 4 and P-type silicon layers 3 on an integrated optical path by using a semiconductor processing technology and using an epitaxial process, wherein the steps are as described in S3 and S4;
s6, setting an intermediate insulating layer 5 on the strained SiGe layer 4 by using a semiconductor manufacturing technology on an integrated optical path;
s7, setting a strain silicon nitride layer 6 on the intermediate insulating layer 5 by using a semiconductor manufacturing technology on an integrated optical path;
s8, setting an N-type silicon layer 7 on the strained silicon nitride layer 6 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s9, setting a plurality of strained silicon nitride layers 6 and N-type silicon layers 7 on an integrated optical path by using a semiconductor processing technology and using an epitaxial process, wherein the steps are as described in S7 and S8;
s10, setting a polysilicon layer 8 on an N-type silicon layer 7 by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer 3 and the N-type silicon layer 7 are used as optical waveguides, and bias voltages are applied to the P-type silicon layer 3 and the N-type silicon layer 7 on the integrated optical path to change refractive indexes of the P-type silicon layer 3 and the N-type silicon layer 7.
Referring to fig. 1, the intermediate insulating layer 5 is a sandwich structure made of silicon oxide, aluminum oxide, zirconium oxide or hafnium oxide; the P-type silicon layer 3 and the polysilicon layer 8 are respectively extended with a power connection part 9, and the bias voltage is electrically connected with the power connection part 9; wherein the thickness of the silicon oxide layer 2 is 120nm-200nm; the thickness of the P-type silicon layer 3 is 100nm-200nm; the thickness of the strain silicide germanium layer 4 is 10nm-25nm; the thickness of the intermediate insulating layer 5 is 2nm-10nm; the thickness of the strained silicon nitride layer 6 is 8nm-20nm; the thickness of the N-type silicon layer 7 is 100nm-200nm; the thickness of the polysilicon layer 8 is 100nm to 200nm.
Referring to fig. 2-4, the present invention provides a phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system:
1) A strained germanosilicide layer 4 is disposed on the P-type silicon layer 3 by an epitaxial process, the strained germanosilicide layer 4 has a strain force acting on the P-type silicon layer 3, the effective mass of electrons is reduced, the refractive index of the P-type silicon layer 3 is increased, and according to formula (1):
∆n=-(e 2 λ 2 /8π 2 c 2 ε 0 n)[∆N e /m* ce +∆N h /m* ch ]①
wherein e is an electron charge, ε 0 Is the dielectric constant in vacuum, c is the speed of light in vacuum, lambda is the wavelength, n is the undisturbed refractive index, m ce And m is ch Is the conductivity effective mass of electrons and holes, fatn e And N is equal to h Is the concentration change of electrons and holes;
2) An N-type silicon layer 7 is disposed on the strained silicon nitride layer 6 by an epitaxial process, the strained silicon nitride layer 6 has a strain force acting on the N-type silicon layer 7, the effective mass of electrons is reduced, the refractive index of the N-type silicon layer 7 is increased, according to formula (1):
∆n=-(e 2 λ 2 /8π 2 c 2 ε 0 n)[∆N e /m* ce +∆N h /m* ch ]①
wherein e is an electron charge, ε 0 Is the dielectric constant in vacuum, c is the speed of light in vacuum, lambda is the wavelength, n is the undisturbed refractive index, m ce And m is ch Is the conductivity effective mass of electrons and holes, fatn e And N is equal to h Is the concentration change of electrons and holes.
As shown in fig. 3 and 4, fig. 3 is a graph of light transmission rate versus wavelength, and fig. 4 is a graph of refractive index induced phase change; this will enhance the refractive index of the P-type silicon layer 3 and the refractive index of the N-type silicon layer 7 more; thus, the strained germanosilicide layer 4 and the strained silicon nitride layer 6 will enhance the change of the refractive index more to enhance the phase modulation of the light wave.
In embodiment 1, referring to fig. 5, a phase modulator using composite strained silicon nitride in a silicon photonics system includes an integrated optical circuit, the integrated optical circuit is configured to include the following steps:
s1, a silicon wafer 1 is arranged on an integrated optical path as a base layer;
s2, arranging a silicon oxide layer 2 (SiO 2) on the silicon wafer 1 by using a semiconductor processing technology on an integrated optical path;
s3, setting a P-type silicon layer 3 on the silicon oxide layer 2 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s4, setting an intermediate insulating layer 5 on the P-type silicon layer 3 by using a semiconductor process technology on an integrated optical path;
s5, setting a strain silicon nitride layer 6 on the intermediate insulating layer 5 by using a semiconductor manufacturing technology on an integrated optical path;
s6, setting an N-type silicon layer 7 on the strained silicon nitride layer 6 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s7, setting a plurality of strained silicon nitride layers 6 and N-type silicon layers 7 on an integrated optical path by using a semiconductor processing technology and using an epitaxial process, wherein the steps are as described in S5 and S6;
s8, setting a polysilicon layer 8 on the N-type silicon layer 7 by using a semiconductor process technology on an integrated optical path;
the P-type silicon layer 3 and the N-type silicon layer 7 are used as optical waveguides, and bias voltages are applied to the P-type silicon layer 3 and the N-type silicon layer 7 on the integrated optical path to change refractive indexes of the P-type silicon layer 3 and the N-type silicon layer 7.
Referring to fig. 5, the intermediate insulating layer 5 is a sandwich structure made of silicon oxide, aluminum oxide, zirconium oxide or hafnium oxide; the P-type silicon layer 3 and the polysilicon layer 8 are respectively extended with a power connection part 9, and the bias voltage is electrically connected with the power connection part 9; wherein the thickness of the silicon oxide layer 2 is 120nm-200nm; the thickness of the P-type silicon layer 3 is 100nm-200nm; the thickness of the intermediate insulating layer 5 is 2nm-10nm; the thickness of the strained silicon nitride layer 6 is 8nm-20nm; the thickness of the N-type silicon layer 7 is 100nm-200nm; the thickness of the polysilicon layer 8 is 100nm to 200nm.
Referring to fig. 2-4, the present invention provides a phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system:
an N-type silicon layer 7 is disposed on the strained silicon nitride layer 6 by an epitaxial process, the strained silicon nitride layer 6 has a strain force acting on the N-type silicon layer 7, the effective mass of electrons is reduced, the refractive index of the N-type silicon layer 7 is increased, according to formula (1):
∆n=-(e 2 λ 2 /8π 2 c 2 ε 0 n)[∆N e /m* ce +∆N h /m* ch ]①
wherein e is an electron charge, ε 0 Is the dielectric constant in vacuum, c is the speed of light in vacuum, lambda is the wavelength, n is the undisturbed refractive index, m ce And m is ch Is the conductivity effective mass of electrons and holes, fatn e And N is equal to h Is the concentration change of electrons and holes.
As shown in fig. 3 and 4, fig. 3 is a graph of light transmission rate versus wavelength, and fig. 4 is a graph of refractive index induced phase change; this will enhance the refractive index of the N-type silicon layer 7 even more; the strained silicon nitride layer 6 will therefore enhance the change in refractive index more to enhance the phase modulation of the light wave.
Embodiment 2, referring to fig. 6, a phase modulator using composite strained germanosilicide in a silicon photonics system includes an integrated circuit, the integrated circuit comprising:
s1, a silicon wafer 1 is arranged on an integrated optical path as a base layer;
s2, arranging a silicon oxide layer 2 (SiO 2) on the silicon wafer 1 by using a semiconductor processing technology on an integrated optical path;
s3, setting a P-type silicon layer 3 on the silicon oxide layer 2 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s4, setting a strain silicide germanium layer 4 on the P-type silicon layer 3 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s5, setting a plurality of strained SiGe layers 4 and P-type silicon layers 3 on an integrated optical path by using a semiconductor processing technology and using an epitaxial process, wherein the steps are as described in S3 and S4;
s6, setting an intermediate insulating layer 5 on the strained SiGe layer 4 by using a semiconductor manufacturing technology on an integrated optical path;
s7, setting an N-type silicon layer 7 on the intermediate insulating layer 5 by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
s8, setting a polysilicon layer 8 on the N-type silicon layer 7 by using a semiconductor processing technology on an integrated optical path and using a semiconductor processing technology on the integrated optical path;
the P-type silicon layer 3 and the N-type silicon layer 7 are used as optical waveguides, and bias voltages are applied to the P-type silicon layer 3 and the N-type silicon layer 7 on the integrated optical path to change refractive indexes of the P-type silicon layer 3 and the N-type silicon layer 7.
Referring to fig. 6, the intermediate insulating layer 5 is a sandwich structure made of silicon oxide, aluminum oxide, zirconium oxide or hafnium oxide; the P-type silicon layer 3 and the polysilicon layer 8 are respectively extended with a power connection part 9, and the bias voltage is electrically connected with the power connection part 9; wherein the thickness of the silicon oxide layer 2 is 120nm-200nm; the thickness of the P-type silicon layer 3 is 100nm-200nm; the thickness of the strain silicide germanium layer 4 is 10nm-25nm; the thickness of the intermediate insulating layer 5 is 2nm-10nm; the thickness of the N-type silicon layer 7 is 100nm-200nm; the thickness of the polysilicon layer 8 is 100nm to 200nm.
Referring to fig. 2-4, the present invention provides a phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system:
a strained germanosilicide layer 4 is disposed on the P-type silicon layer 3 by an epitaxial process, the strained germanosilicide layer 4 has a strain force acting on the P-type silicon layer 3, the effective mass of electrons is reduced, the refractive index of the P-type silicon layer 3 is increased, and according to formula (1):
∆n=-(e 2 λ 2 /8π 2 c 2 ε 0 n)[∆N e /m* ce +∆N h /m* ch ]①
wherein e is an electron charge, ε 0 Is the dielectric constant in vacuum, c is the speed of light in vacuum, lambda is the wavelength, n is the undisturbed refractive index, m ce And m is ch Is the conductivity effective mass of electrons and holes, fatn e And N is equal to h Is the concentration change of electrons and holes.
As shown in fig. 3 and 4, fig. 3 is a graph of light transmission rate versus wavelength, and fig. 4 is a graph of refractive index induced phase change; this will enhance the refractive index of the P-type silicon layer 3 even more; the strained germanosilicide layer 4 will thus enhance the change of refractive index more to enhance the phase modulation of the light wave.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Claims (14)
1. A phase modulator using composite strain silicon nitride and composite strain germanium silicide in a silicon photonics system is characterized by comprising an integrated optical circuit, wherein the integrated optical circuit is provided with a silicon chip;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting a strain silicide-germanide layer on the P-type silicon layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting medium insulating layer on the strain silicide germanium layer by semiconductor process technology on the integrated optical path;
setting a strain silicon nitride layer on the intermediate insulating layer by using a semiconductor manufacturing technology on an integrated optical path;
setting N-type silicon layer on the strain silicon nitride layer by using epitaxy process on the integrated optical path by using semiconductor process technology;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
2. The phase modulator of claim 1, wherein the plurality of strained SiGe layers and the plurality of P-type silicon layers are formed by epitaxial processes on the integrated optical circuit using semiconductor processing techniques.
3. The phase modulator of claim 1, wherein the plurality of strained silicon nitride layers and the plurality of N-type silicon layers are formed by epitaxial processes on the integrated optical circuit using semiconductor processing techniques.
4. The phase modulator of claim 1, wherein the intermediate insulating layer is a sandwich structure made of silicon oxide, aluminum oxide, zirconium oxide or hafnium oxide.
5. The phase modulator of claim 1 wherein the P-type silicon layer and the polysilicon layer each have an electrical connection extending therefrom, the bias voltage being electrically connected to the electrical connection.
6. A phase modulator for use with composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the silicon oxide layer has a thickness of 120nm to 200nm.
7. A phase modulator for use with composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the P-type silicon layer has a thickness of 100nm to 200nm.
8. A phase modulator for use with a composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the strained germanium silicide layer has a thickness of 10nm to 25nm.
9. A phase modulator for use with a composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the thickness of the dielectric layer is from 2nm to 10nm.
10. A phase modulator for use with composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the strained silicon nitride layer has a thickness of 8nm to 20nm.
11. A phase modulator for use with composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the N-type silicon layer has a thickness of 100nm to 200nm.
12. A phase modulator for use with composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1, wherein the polysilicon layer has a thickness of 100nm to 200nm.
13. A phase modulator using composite strained silicon nitride in a silicon photonics system, using the phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system as claimed in claim 1 or 3 or 4 or 5 or 6 or 7 or 9 or 10 or 11 or 12, comprising an integrated optical circuit having a silicon wafer thereon;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
an intermediate insulating layer is arranged on the P-type silicon layer by using a semiconductor manufacturing technology on an integrated optical path;
setting a strain silicon nitride layer on the intermediate insulating layer by using a semiconductor manufacturing technology on an integrated optical path;
setting N-type silicon layer on the strain silicon nitride layer by using epitaxy process on the integrated optical path by using semiconductor process technology;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
14. A phase modulator using composite strained silicon nitride and composite strained germanium silicide in a silicon photonics system using the phase modulator of claim 1 or 2 or 4 or 5 or 6 or 7 or 8 or 9 or 11 or 12, comprising an integrated optical circuit having a silicon wafer thereon;
setting silicon oxide layer on the silicon chip by semiconductor process technology on the integrated optical path;
setting a P-type silicon layer on the silicon oxide layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting a strain silicide-germanide layer on the P-type silicon layer by using an epitaxial process on the integrated optical path by using a semiconductor process technology;
setting medium insulating layer on the strain silicide germanium layer by semiconductor process technology on the integrated optical path;
an N-type silicon layer is arranged on the intermediate insulating layer by using a semiconductor processing technology on the integrated optical path and an epitaxial process;
setting a polysilicon layer on the N-type silicon layer by using a semiconductor processing technology on an integrated optical path;
the P-type silicon layer and the N-type silicon layer are used as optical waveguides, and bias voltages are applied to the P-type silicon layer and the N-type silicon layer on an integrated optical path to change refractive indexes of the P-type silicon layer and the N-type silicon layer.
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| CN202311554498.1A CN117289495A (en) | 2023-11-21 | 2023-11-21 | Phase modulator using composite strain silicon nitride and composite strain germanium silicide in silicon photonics system |
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| CN202311554498.1A CN117289495A (en) | 2023-11-21 | 2023-11-21 | Phase modulator using composite strain silicon nitride and composite strain germanium silicide in silicon photonics system |
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