CN117165908A - Magnetron sputtering device and preparation method of polycrystalline silicon layer - Google Patents

Abstract

The present application relates to a magnetron sputtering device. The magnetron sputtering device includes: a magnetron sputtering chamber; a cathode plate, which is arranged vertically in the magnetron sputtering chamber; and an anode plate, which is arranged vertically in the magnetron sputtering chamber. The magnetron sputtering chamber is arranged opposite to the cathode plate; a substrate frame is provided with an opening, and the opening is used to accommodate the substrate to be deposited, and the plane where the opening is located is in the vertical direction. The included angle is ‑10 to 10°. The substrate frame is provided with a number of limiting posts that are rotatably mounted on the edge of the opening. The limiting posts can be rotated to fit the surface of the substrate. In this application, a good deposition effect can be achieved by arranging both the cathode plate and the anode plate vertically, and then using the substrate frame to make the angle between the substrate and the vertical direction ‑10~10°, and the limiting column is used to The substrate is limited on the substrate frame, which can avoid the problem of the substrate being blocked.

Description

Magnetron sputtering device and method for preparing polysilicon layer

Technical field

The present application relates to the field of deposition technology, in particular to magnetron sputtering.

Background technique

In the field of solar cell technology, in order to improve the efficiency of solar cells and reduce the recombination between the surface and the gold half-contact area, a thin layer of dielectric or semiconductor material is usually plated on the surface of the device, that is, surface passivation treatment. Its structure combines an ultra-thin oxide layer with a heavily doped polysilicon layer. Most carriers are transported under the metal by tunneling, while minority carriers are unable to pass through due to the bending of the energy band. Because of this selectivity, the oxide layer is also called a selective contact structure. How to deposit a high-quality polysilicon film on the surface of the device is the key to completing this solar cell structure. At present, there are two main methods of growing polysilicon films in the photovoltaic cell industry: chemical vapor deposition (CVD) method; physical vapor deposition (PVD) method.

Among them, the physical vapor deposition (PVD) method requires a temperature below 250°C, and can artificially control the vaporized particles to move to the substrate along a fixed angle, which has good one-sidedness; at the same time, the entire reaction is a physical process and has no Tail gas emissions are a green technology. Therefore, the PVD method of depositing polysilicon films is the future development path for passivated contact structure solar cells. The PVD method mostly uses the magnetron sputtering method, which bombards the silicon target with high-energy particles to evaporate the silicon atoms and deposit them on the substrate.

However, the conventional magnetron sputtering process is a horizontal transmission method. The silicon wafer is carried through a carrier plate. The deposition surface of the silicon wafer is set downward. In order to expose the lower surface of the silicon wafer and support the silicon wafer, openings are generally provided on the carrier plate. The silicon wafer is arranged in the opening, and the edge of the opening is provided with a retaining edge for supporting the silicon wafer. The ribs are in direct contact with the deposition surface of the silicon wafer, which causes the edges of the deposition surface of the silicon wafer to be blocked by the ribs, resulting in a loss of solar cell efficiency.

Contents of the invention

Embodiments of the present application provide a magnetron sputtering device and a method for preparing a polysilicon layer to solve the technical problem that the edge of the silicon wafer deposition surface is blocked by the blocking edge.

In a first aspect, embodiments of the present application provide a magnetron sputtering device, which includes:

Magnetron sputtering chamber;

A cathode plate is installed vertically in the magnetron sputtering chamber;

An anode plate is arranged vertically in the magnetron sputtering chamber and opposite to the cathode plate;

The substrate frame is provided with an opening, and the opening is used to accommodate the substrate to be deposited. The angle between the plane where the opening is located and the vertical direction is -10 to 10°. A number of limiting posts are rotatably provided at the edge of the opening, and the limiting posts can be rotated to fit the surface of the substrate.

In some embodiments of the present application, the magnetron sputtering device includes an anode plate, and the anode plate is disposed in the middle of the magnetron sputtering chamber; the magnetron sputtering device includes two cathode plates, The two cathode plates are respectively disposed at both ends of the magnetron sputtering chamber; the substrate frame is disposed on both sides of the anode plate.

In some embodiments of the present application, a chute is provided on the lower surface inside the magnetron sputtering chamber. The chute is disposed on both sides of the anode plate and parallel to the anode plate. The substrate The lower end of the frame is slidably arranged in the chute.

In some embodiments of the present application, an electric roller for driving the substrate frame to move in the chute is provided in the chute.

In some embodiments of the present application, the electric rollers are provided on both sides of the lower end of the substrate frame.

In some embodiments of the present application, the electric rollers are arranged along the slide linear array, and the width of the substrate frame is not less than twice the distance between adjacent electric rollers.

In a second aspect, embodiments of the present application provide a method for preparing a polysilicon layer, which method includes the following steps:

Provide the magnetron sputtering device described in the first aspect;

providing a substrate to be deposited;

The substrate is placed into the opening of the substrate frame and a polysilicon layer is deposited within the magnetron sputtering device.

In some embodiments of the present application, providing a substrate to be deposited includes the following steps:

Provide N-type silicon wafers;

Texturing the silicon wafer;

Perform high-temperature boron diffusion treatment on one side of the textured silicon wafer;

Remove the doped layer formed by the boron diffusion on the other side of the silicon wafer and polish it;

Prepare a tunnel oxide layer on the other side of the polished silicon wafer,

The polysilicon layer is deposited on the tunnel oxide layer.

In some embodiments of the present application, the deposition of the polysilicon layer in the magnetron sputtering device is performed at 0.1 to 0.7 Pa.

In some embodiments of the present application, the deposition of the polysilicon layer in the magnetron sputtering device is performed at 100 to 300°C.

Compared with the existing technology, the above technical solutions provided by the embodiments of the present application have the following advantages:

The magnetron sputtering device and the preparation method of the polysilicon layer provided by the embodiments of the present application are to set both the cathode plate and the anode plate vertically, and then use the substrate frame to make the angle between the substrate and the vertical direction be -10 to 10 °A good deposition effect can be achieved, and the substrate is limited on the substrate frame through the limiting column, which can avoid the problem of the substrate being blocked.

Description of drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.

In order to more clearly explain the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings needed to describe the embodiments or the prior art. Obviously, for those of ordinary skill in the art, It is said that other drawings can be obtained based on these drawings without exerting creative labor.

Figure 1 is a schematic structural diagram of a magnetron sputtering device provided by an embodiment of the present application;

Figure 2 is a schematic structural diagram of the interior of the magnetron sputtering chamber according to the embodiment of the present application;

Figure 3 is a schematic front structural view of the substrate frame according to the embodiment of the present application;

Figure 4 is a schematic side structural view of the substrate frame according to the embodiment of the present application;

Figure 5 is a schematic structural diagram of the silicon wafer after texturing according to the embodiment of the present application;

Figure 6 is a schematic structural diagram of the silicon wafer after boron diffusion according to the embodiment of the present application;

Figure 7 is a schematic structural diagram of the polished silicon wafer according to the embodiment of the present application;

Figure 8 is a schematic structural diagram of a silicon wafer after preparing a tunnel oxide layer according to the embodiment of the present application;

FIG. 9 is a schematic structural diagram of a silicon wafer after depositing doped amorphous silicon according to the embodiment of the present application.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments These are part of the embodiments of this application, but not all of them. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of this application.

Unless otherwise specifically stated, the terms used herein are to be understood as commonly used in the art. Therefore, unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. If there is any conflict, this manual takes precedence.

Unless otherwise specified, various raw materials, reagents, instruments and equipment used in this application can be purchased in the market or prepared by existing methods.

In the deposition of polysilicon for solar cells, there is a technical problem that the edge of the existing silicon wafer deposition surface is blocked by the edge.

The technical solutions provided by the embodiments of this application are to solve the above technical problems. The general idea is as follows:

In a first aspect, embodiments of the present application provide a magnetron sputtering device, which includes:

Magnetron sputtering chamber 01;

The cathode plate 02 is arranged vertically in the magnetron sputtering chamber 01;

Anode plate 03 is arranged vertically in the magnetron sputtering chamber 01 and opposite to the cathode plate 02;

Substrate frame 04. The substrate frame 04 is provided with an opening. The opening is used to accommodate the substrate to be deposited. The angle between the plane where the opening is located and the vertical direction is -10 to 10°. The substrate A number of limiting posts 0411 are rotatably provided on the frame 04 at the edge of the opening, and the limiting posts 0411 can be rotated to fit the surface of the substrate.

Those skilled in the art can understand that the specific connection method of the cathode plate 02 and the anode plate 03 with the magnetron sputtering chamber 01 can refer to the conventional arrangement method in the art.

Those skilled in the art can understand that the plane on which the opening is located is the plane on which the substrate is located. A good deposition effect can be achieved even if the angle between the substrate and the vertical direction is -10° to 10°.

The substrate frame 04 of the present application can limit the substrate in the opening through the limiting column 0411. The blocking area of the limiting column 0411 can be much smaller than the blocking area of the edge in the traditional method.

In actual work, a target 07 should be provided on the cathode plate 02 . Generally, the target 07 can be arranged on the cathode in an array arrangement.

In some examples of this application, the limiting column 0411 is connected to one end of a rotation shaft, which is disposed through both sides of the substrate frame 04 , and the other end of the rotation shaft is connected to another limiting column. Column 0411.

In this application, a good deposition effect can be achieved by setting both the cathode plate 02 and the anode plate 03 vertically, and then using the substrate frame 04 to make the angle between the substrate and the vertical direction be -10 to 10°, and through the limiting column 0411 Limiting the substrate on the substrate frame 04 can avoid the problem of the substrate being blocked.

In some embodiments of the present application, the magnetron sputtering device includes an anode plate 03, which is disposed in the middle of the magnetron sputtering chamber 01; the magnetron sputtering device includes two Cathode plate 02, the two cathode plates 02 are respectively disposed at both ends of the magnetron sputtering chamber 01; the substrate frame 04 is disposed on both sides of the anode plate 03.

The working area where the deposition process is performed is formed between the anode plate 03 and the cathode plate 02 . An anode plate 03 is set up in the middle of the magnetron sputtering chamber 01, and two cathode plates 02 are set up at both ends of the magnetron sputtering chamber 01. Three plates can be used to build two working areas, increasing the work area. efficiency.

In some embodiments of the present application, a chute 05 is provided on the lower surface inside the magnetron sputtering chamber 01 , and the chute 05 is disposed on both sides of the anode plate 03 and parallel to the anode plate 03 , the lower end of the substrate frame 04 is slidably disposed in the chute 05 .

The chute 05 can enable the substrate frame 04 to be stably placed in the magnetron sputtering chamber 01 without tipping over. At the same time, the substrate frame 04 can slide along the chute 05. Multiple substrate frames 04 are arranged to perform deposition while sliding along the chute 05, so that continuous production can be performed.

In some embodiments of the present application, the substrate frame 04 includes a frame 041 and a base 042 , wherein the base 042 is disposed in the chute 05 .

In some embodiments of the present application, an electric roller 06 is provided in the chute 05 for driving the substrate frame 04 to move in the chute 05 .

In some embodiments of the present application, the electric rollers 06 are provided on both sides of the lower end of the substrate frame 04 .

Providing electric rollers 06 on both sides of the lower end of the substrate frame 04 is helpful to make the movement of the substrate frame 04 in the chute 05 more stable.

In some embodiments of the present application, the electric rollers 06 are arranged along the slide linear array, and the width of the substrate frame 04 is not less than twice the distance between adjacent electric rollers 06 .

The width of the substrate frame 04 is not less than twice the distance between adjacent electric rollers 06, so that when the substrate frame 04 moves in the chute 05, at least two sets of opposite electric rollers 06 drive the substrate at the same time. Frame 04 moves, which helps improve the stability of the movement.

In a second aspect, embodiments of the present application provide a method for preparing a polysilicon layer, which method includes the following steps:

S1: Provide the magnetron sputtering device described in the first aspect;

S2: Provide the substrate to be deposited;

S3: Place the substrate into the opening of the substrate frame, and deposit a polysilicon layer in the magnetron sputtering device.

In some embodiments of the present application, providing a substrate to be deposited includes the following steps:

S11: Provide N-type silicon wafers;

S12: Texturing the silicon wafer;

S13: Perform high-temperature boron diffusion treatment on one side of the textured silicon wafer;

S14: Remove the doped layer formed by the boron diffusion on the other side of the silicon wafer, and polish it;

S15: Prepare a tunnel oxide layer on the other side of the polished silicon wafer.

S16: The polysilicon layer is deposited on the tunnel oxide layer.

Those skilled in the art can understand that by providing the silicon wafer processed in steps S11 to S16 as a substrate and then depositing a polysilicon layer, it can be used to prepare solar cells.

In order to further elaborate on the preparation method of the polysilicon layer of the present application, the preparation method of the polysilicon layer can be carried out in the following manner:

The front and rear surfaces of the N-type silicon wafer substrate are cleaned, and then textured to remove the surface damage layer and prepare a pyramid morphology 1. The textured silicon wafer structure is shown in Figure 5;

The silicon wafer is subjected to high-temperature boron diffusion to prepare doping layer 2. The structure of the silicon wafer after boron diffusion is shown in Figure 6;

The back side of the silicon wafer is etched and polished to remove the doped area produced by the back side expansion and form a polished surface morphology. The polished silicon wafer structure is shown in Figure 7;

A layer of tunnel oxide layer 3 is prepared on the back of the silicon wafer. The structure of the silicon wafer after the tunnel oxide layer is prepared is as shown in Figure 8;

The magnetron sputtering device provided in this application is used to deposit a layer of doped amorphous silicon 4 on the back of the silicon wafer. The structure of the silicon wafer after depositing the doped amorphous silicon is shown in Figure 9.

In some embodiments of the present application, the deposition of the polysilicon layer in the magnetron sputtering device is performed at 0.1 to 0.7 Pa.

In some embodiments of the present application, the deposition of the polysilicon layer in the magnetron sputtering device is performed at 100 to 300°C.

Various embodiments of the present application may exist in the form of a range; it should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a hard limit to the scope of the present application; therefore, the described scope should be considered The description has specifically disclosed all possible subranges as well as the single numerical values within that range. For example, a description of a range from 1 to 6 should be considered to have specifically disclosed subranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and A single number within the stated range, such as 1, 2, 3, 4, 5, and 6, applies regardless of the range. Additionally, whenever a numerical range is indicated herein, it is intended to include any cited number (fractional or whole) within the indicated range.

In this application, unless otherwise specified, the directional words used such as "upper" and "lower" specifically refer to the direction of the drawing in the drawings. In addition, in the description of this application, the terms "including", "including" and the like mean "including but not limited to". Furthermore, the terms "comprises," "comprises," or any other variations thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also those not expressly listed other elements, or elements inherent to the process, method, article or equipment. Without further limitation, an element defined by the statement "comprising..." does not exclude the presence of additional identical elements in a process, method, article, or device that includes the stated element. In this document, relational terms such as "first" and "second" are merely used to distinguish one entity or operation from another entity or operation and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or sequence. In this article, "and/or" describes the relationship between associated objects, indicating that there can be three relationships. For example, A and/or B can mean: A alone exists, A and B exist simultaneously, and B exists alone. . For the association relationship of more than three associated objects described with "and/or", it means that any one of the three associated objects can exist alone, or at least two of them can exist at the same time, for example, for A, and/or B , and/or C, can mean that any one of A, B, and C exists alone, or any two of them exist at the same time, or three of them exist at the same time. In this article, "at least one" means one or more, and "plurality" means two or more. "At least one", "at least one of the following" or similar expressions thereof refers to any combination of these items, including any combination of a single item (items) or a plurality of items (items). For example, "at least one of a, b, or c", or "at least one of a, b, and c" can mean: a, b, c, a-b ( That is, a and b), a-c, b-c, or a-b-c, where a, b, and c can be single or multiple respectively.

The above descriptions are only specific embodiments of the present application, enabling those skilled in the art to understand or implement the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be practiced in other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims (10)

1. A magnetron sputtering device, characterized in that the magnetron sputtering device includes: Magnetron sputtering chamber; A cathode plate is installed vertically in the magnetron sputtering chamber; An anode plate is arranged vertically in the magnetron sputtering chamber and opposite to the cathode plate; The substrate frame is provided with an opening, and the opening is used to accommodate the substrate to be deposited. The angle between the plane where the opening is located and the vertical direction is -10 to 10°. A number of limiting posts are rotatably provided at the edge of the opening, and the limiting posts can be rotated to fit the surface of the substrate. 2. The magnetron sputtering device according to claim 1, characterized in that the magnetron sputtering device includes an anode plate, and the anode plate is arranged in the middle of the magnetron sputtering chamber; The sputtering device includes two cathode plates, which are respectively arranged at both ends of the magnetron sputtering chamber; the substrate frames are arranged on both sides of the anode plate. 3. The magnetron sputtering device according to claim 2, characterized in that a chute is provided on the lower surface inside the magnetron sputtering chamber, and the chute is arranged on both sides of the anode plate and is parallel to On the anode plate, the lower end of the substrate frame is slidably disposed in the chute. 4. The magnetron sputtering device according to claim 3, wherein an electric roller for driving the substrate frame to move in the chute is provided in the chute. 5. The magnetron sputtering device according to claim 4, wherein the electric rollers are arranged on both sides of the lower end of the substrate frame. 6. The magnetron sputtering device according to claim 5, wherein the electric rollers are arranged in a linear array along the slideway, and the width of the substrate frame is not less than twice the distance between adjacent electric rollers. . 7. A method for preparing a polysilicon layer, characterized in that the method includes the following steps: Provide the magnetron sputtering device according to any one of claims 1-6; providing a substrate to be deposited; The substrate is placed into the opening of the substrate frame and a polysilicon layer is deposited within the magnetron sputtering device. 8. The method for preparing a polysilicon layer according to claim 7, wherein said providing a substrate to be deposited includes the following steps: Provide N-type silicon wafers; Texturing the silicon wafer; Perform high-temperature boron diffusion treatment on one side of the textured silicon wafer; Remove the doped layer formed by the boron diffusion on the other side of the silicon wafer and polish it; Prepare a tunnel oxide layer on the other side of the polished silicon wafer, The polysilicon layer is deposited on the tunnel oxide layer. 9. The method for preparing a polysilicon layer according to claim 8, wherein the deposition of the polysilicon layer in the magnetron sputtering device is performed at 0.1 to 0.7 Pa. 10. The method for preparing a polysilicon layer according to claim 8, wherein the deposition of the polysilicon layer in the magnetron sputtering device is performed at 100 to 300°C.