CN117127165A - Deposition method of plasma enhanced ethyl orthosilicate film layer - Google Patents

Abstract

The invention provides a deposition method of a plasma enhanced ethyl orthosilicate film layer, which comprises the following steps: setting a plurality of spray heads with different air hole distributions according to the shape of a plasma enhanced ethyl orthosilicate film layer to be formed, wherein each spray head is divided into an inner ring and an outer ring positioned outside the inner ring, and in the spray heads with different air hole distributions, the air hole density of the inner ring of part of the spray heads is equal to that of the outer ring, and the air hole density of the inner ring of part of the spray heads is smaller than that of the outer ring; and sequentially depositing a plasma enhanced ethyl orthosilicate film layer with partial thickness by using all spray heads. According to the invention, the number of the spray heads with the air hole density of the inner ring being equal to the air hole density of the outer ring and the air hole density of the inner ring being smaller than the number of the spray heads of the outer ring are arranged, so that the plasma enhanced tetraethyl orthosilicate film layer with a required shape is obtained, and the requirements of various semiconductor devices on the shape of the plasma enhanced tetraethyl orthosilicate film layer are met.

Description

Plasma-enhanced deposition method of ethyl orthosilicate film layer

Technical field

The invention relates to the field of semiconductor technology, and in particular to a plasma-enhanced deposition method of a tetraethyl orthosilicate film layer.

Background technique

Plasma enhanced tetraethyl orthosilicate (PETEOS) film is generally used as an insulating layer in semiconductor devices and is widely used. Since plasma-enhanced tetraethyl orthosilicate exists in the form of a film layer, which exists above and below other film layers, the shape of the plasma-enhanced tetraethyl orthosilicate film layer is very controllable. Important, otherwise it will affect the overall appearance of the semiconductor device and may even affect the electrical function.

In the existing technology, the formation method of the plasma enhanced tetraethyl orthosilicate (PETEOS) film layer is to use TEOS (tetraethyl orthosilicate) and oxygen as raw materials, and deposit the plasma enhanced tetraethyl orthosilicate (PETEOS) The reaction used in the equipment is formed by PECVD (Plasma Enhanced Chemical Vapor Deposition) deposition. The function of the plasma enhanced ethyl orthosilicate (PETEOS) deposition equipment is to use chemical reactions to deposit thin films on the surface of the wafer. In the cavity of the deposition equipment After a wafer is processed in the body, the processed wafer is transferred out of the cavity.

However, the shape of the plasma-enhanced tetraethyl orthosilicate membrane (PETEOS) formed by the existing technology cannot be controlled, and is often in a shape with a high middle and low edges. Since the shape of the PETEOS membrane cannot be controlled, it cannot be adapted to various semiconductor device needs.

Contents of the invention

The object of the present invention is to provide a method for depositing a plasma-enhanced tetraethyl orthosilicate film layer, which can form a plasma-enhanced tetraethyl orthosilicate film layer in a desired shape, thereby adapting to semiconductor devices with different needs.

In order to achieve the above object, the present invention provides a plasma-enhanced deposition method of tetraethyl orthosilicate film layer, including:

Several nozzles with different pore distributions are provided according to the shape of the plasma-enhanced ethylene orthosilicate film layer to be formed. Each nozzle is divided into an inner ring and an outer ring located outside the inner ring. Several nozzles with different pore distributions are provided. Among them, the pore density of the inner ring of some of the nozzle heads is equal to the pore density of the outer ring, and the pore density of the inner ring of some of the nozzle heads is smaller than the pore density of the outer ring; and

All of the showerheads were used to sequentially deposit a partial thickness film layer of plasma enhanced tetraethyl orthosilicate.

Optionally, in the deposition method of the plasma-enhanced tetrasilicate orthosilicate film layer, before sequentially depositing a partial thickness of the plasma-enhanced tetrasilicate orthosilicate film layer using all the nozzles, the method further includes: The nozzle provides reactive gas for forming a plasma-enhanced tetraethyl orthosilicate film layer.

Optionally, in the deposition method of the plasma-enhanced ethyl orthosilicate film layer, the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is greater than the number of nozzles with the pore density of the inner ring being less than the pore density of the outer ring. When the number of nozzles is equal to or greater than the number of nozzles, the plasma-enhanced tetraethyl orthosilicate film layer formed is thick in the middle and thin at the edges.

Optionally, in the deposition method of the plasma-enhanced ethyl orthosilicate film layer, the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is less than or equal to the pore density of the inner ring being less than the pores of the outer ring. When the density of the nozzles increases, the plasma-enhanced ethyl orthosilicate film layer formed is in the shape of a thin middle and thick edge.

Optionally, in the deposition method of plasma-enhanced tetraethyl orthosilicate film layer, all the nozzles are detachably installed on the top of the deposition equipment.

Optionally, in the plasma-enhanced deposition method of tetraethyl orthosilicate film layer, the cross-sections of all the pores are circular and have the same radius.

Optionally, in the plasma-enhanced deposition method of tetraethyl orthosilicate film layer, the cross-section of the nozzle is circular.

Optionally, in the deposition method of the plasma-enhanced tetraethyl orthosilicate film layer, the area from the center of the circle to one-third of the radius is divided into an inner ring, and the nozzle outside the outer ring serves as the outer ring.

Optionally, in the plasma-enhanced deposition method of tetraethyl orthosilicate film layer, the inner ring is circular and the outer ring is annular.

Optionally, in the deposition method of the plasma-enhanced ethyl orthosilicate film layer, when the pore density of the inner ring of the nozzle is less than the pore density of the outer ring, the number of pores of the inner ring is One-eleventh of the number of pores in the outer ring.

In the deposition method of the plasma-enhanced ethyl orthosilicate film layer provided by the present invention, the method includes: setting a number of nozzles with different pore distributions according to the shape of the plasma-enhanced tetrasilicate orthosilicate film layer to be formed, and each nozzle is divided into It is the inner ring and the outer ring located outside the inner ring. Among several nozzles with different pore distributions, the pore density of the inner ring of some nozzles is equal to the pore density of the outer ring, and the pore density of the inner ring of some nozzles is smaller than the pore density of the outer ring; All nozzles were used to sequentially deposit a partial-thickness plasma-enhanced ethylene orthosilicate film layer. The present invention obtains a plasma-enhanced ethyl orthosilicate film layer of a desired shape by setting the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring and the number of nozzles with the pore density of the inner ring smaller than the outer ring. , thereby adapting to the needs of various semiconductor devices for the shape of the plasma-enhanced tetraethyl orthosilicate film layer.

Description of the drawings

Figure 1 is a flow chart of a plasma-enhanced deposition method of a tetraethyl orthosilicate film layer according to an embodiment of the present invention.

Detailed ways

Specific embodiments of the present invention will be described in more detail below with reference to the schematic diagrams. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

In the following, the terms "first", "second", etc. are used to distinguish between similar elements and are not necessarily used to describe a specific order or chronological order. It is understood that these terms so used are interchangeable where appropriate. Similarly, if a method described herein includes a series of steps, the order of these steps presented herein is not necessarily the only order in which the steps may be performed, and some of the steps described may be omitted and/or some not described herein. Additional steps can be added to the method.

Also, it will be understood that when a layer (or film), region, pattern or structure is referred to as being "on" a substrate, layer (or film), region and/or pattern, it can be directly on another layer or substrate above, and/or there may also be intervening layers. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" each layer may be made based on the drawings.

Referring to Figure 1, the present invention provides a plasma-enhanced deposition method of tetraethyl orthosilicate film layer, including:

S11: Set up several nozzles with different pore distributions according to the shape of the plasma-enhanced ethyl orthosilicate film layer to be formed. Each nozzle is divided into an inner ring and an outer ring located outside the inner ring. Among several nozzles with different pore distributions, The pore density of the inner ring of some nozzles is equal to the pore density of the outer ring, and the pore density of the inner ring of some nozzles is smaller than the pore density of the outer ring; and

S12: Use all nozzles to deposit a partial thickness of plasma-enhanced tetraethyl orthosilicate film layer in sequence.

Similarly, the plasma-enhanced ethyl orthosilicate film layer deposition equipment used in the embodiment of the present invention includes: a number of detachable nozzles, all of which include multiple air holes, and each nozzle is divided into an inner ring and an outer ring located outside the inner ring. The pore density of the inner ring of some nozzles is equal to the pore density of the outer ring, and the pore density of the inner ring of some nozzles is smaller than the pore density of the outer ring. All nozzles are removable and mounted on the top of the deposition equipment. Preferably, the deposition equipment for plasma-enhanced tetraethyl orthosilicate film layer (PETEOS film layer) further includes a gas supply device for providing reaction gas for forming the PETEOS film layer to the nozzle. If TEOS (tetraethyl orthosilicate) and oxygen are used as reaction gases, there will be a device that supplies TEOS (tetraethyl orthosilicate) and oxygen. Before using several nozzles to sequentially deposit partial thickness PETEOS film layers, the reaction gas for forming the PETEOS film layer is supplied to all nozzles. The deposition equipment of the embodiment of the present invention has a cavity, and a number of detachable nozzles are provided on the top, and a bearing platform for carrying the substrate is provided below. The nozzles sequentially form films on the substrate. After all the nozzles have sprayed, Complete PETEOS film layer.

The cross-sections of all air holes in the embodiment of the present invention are circular and have the same radius. The pores can be distributed evenly or unevenly, depending on the actual process requirements. The cross-section of the nozzle is circular. Divide the area from the center of the circle to one-third of the radius into an inner ring, and the nozzle outside the outer ring serves as the outer ring. The inner ring is circular and the outer ring is annular. When the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is greater than the number of nozzles with the pore density of the inner ring smaller than the pore density of the outer ring, when the nozzle sprays the reactive gas, the airflow of the reactive gas ejected from the inner ring is greater than that of the outer ring. A stream of ejected reaction gas. Therefore, the PETEOS film layer formed using this nozzle has a shape with a thick middle and thin edges. When the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is less than or equal to the number of nozzles with the pore density of the inner ring less than the pore density of the outer ring, the number of pores in the inner ring is eleven minutes of the number of pores in the outer ring. One, it can also be that the number of pores in the inner ring of a nozzle with a pore density in the inner ring less than that in the outer ring is 25% less than that of a nozzle with a pore density in the inner ring equal to the pore density in the outer ring, resulting in The airflow in the middle area becomes less, so the film formation rate becomes lower. At this time, the flow of the reaction gas ejected from the inner ring is greater than the flow of the reaction gas ejected from the outer ring. Therefore, the PETEOS film layer formed using this nozzle is thick in the middle and thin on the edge.

Specifically, for example, if there are 6 nozzles, the PETEOS film layer is divided into 6 parts in terms of thickness, and each nozzle completes the deposition of 1 part of the PETEOS film layer. The thickness of the PETEOS film layer is the thickness required for semiconductor devices. If it is divided into six parts, it can be divided into six parts evenly or unevenly. After the first nozzle forms a PETEOS film layer of a certain thickness, the second nozzle is directly formed on the PETEOS film layer formed by the first nozzle, and the third nozzle is directly formed on the PETEOS film layer formed by the second nozzle. , the fourth nozzle is directly formed on the PETEOS film layer formed by the third nozzle, the fifth nozzle is directly formed on the PETEOS film layer formed by the fourth nozzle, and the sixth nozzle is directly formed on the fifth nozzle It is directly formed on the PETEOS film layer, and six nozzles complete the entire thickness of the PETEOS film layer. Among them, if the first to fourth nozzles are all nozzles with the pore density of the inner ring equal to the pore density of the outer ring, then the partial thickness of the PETEOS film layer formed by the first nozzle is already a film layer that is high in the middle and low on the edges. Yes, the PETEOS film layer formed by the second to fourth nozzles will be higher in the middle and lower on the edge. If the fifth to sixth nozzles are nozzles with a pore density in the inner ring that is smaller than a pore density in the outer ring, The fifth and sixth nozzles will form a PETEOS film layer with a low middle and high edge shape. The neutralization of 6 nozzles can change the shape of the PETEOS film layer. Other numbers of nozzles are not described here and can be set as needed. The film layer to be formed is circular, and the film layer is divided into an inner ring and an outer ring. The outer ring is naturally outside the inner ring and can be divided from the radius, thereby dividing the film layer into an inner ring and an outer ring. For example, the film layer from the center of the circle to half the radius is the inner ring, and the rest is the outer ring. You can select 5 points in the inner circle, and try to spread these 5 points throughout the inner circle. Choose 4 points in the outer circle, and try to spread these 4 points in various places in the outer circle. Measure the average film thickness at 5 points on the inner ring and the average film thickness at 4 points on the outer ring. Calculate the difference between the average film thickness at 5 points on the inner ring and the average film thickness at 4 points on the outer ring. If the difference is greater than 0, it means that the PETEOS film layer has a convex shape with a high middle and low edges. If the difference is less than 0, it means that the PETEOS film layer has a concave shape with a low middle and high edges. If the difference is equal to 0, it means that the PETEOS film layer has a shape with almost flat thickness in the middle and edges. If you choose 6 nozzles with the pore density of the inner ring equal to the pore density of the outer ring, the difference between the average film thickness at 5 points on the inner ring and the average film thickness at 4 points on the outer ring is 325 angstroms. If you choose 4 nozzles with the pore density of the inner ring equal to the pore density of the outer ring and 2 nozzles with the pore density of the inner ring smaller than the pore density of the outer ring, then the average of the film thickness at 5 points on the inner ring is the same as that on the outer ring. The difference in the average value of the film thickness at four points is 121 angstroms. If you choose 3 nozzles with pore density in the inner ring equal to the pore density in the outer ring and 3 nozzles with pore density in the inner ring smaller than that in the outer ring, then the average film thickness at 5 points in the inner ring is the same as that in the outer ring. The difference in the average value of the film thickness at 4 points is -210 Angstroms. If you choose 4 nozzles with the pore density of the inner ring equal to the pore density of the outer ring and 2 nozzles with the pore density of the inner ring smaller than the pore density of the outer ring, then the average of the film thickness at 5 points on the inner ring is the same as that on the outer ring. The difference in the average value of the film thickness at 4 points is -554 Angstroms. If the pore density of the 6 inner rings is smaller than the pore density of the outer ring, the difference between the average film thickness at 5 points on the inner ring and the average film thickness at 4 points on the outer ring is -826 Angstroms. Therefore, the nozzle can be replaced according to the specific shape of the PETEOS film layer to be formed. Partial quantity of nozzles can be replaced.

In summary, the method for depositing a plasma-enhanced tetrasilicate orthosilicate film layer provided by an embodiment of the present invention includes: setting a number of nozzles with different pore distributions according to the shape of the plasma-enhanced tetrasilicate orthosilicate film layer to be formed. , each nozzle is divided into an inner ring and an outer ring located outside the inner ring. Among several nozzles with different pore distributions, the pore density of the inner ring of some nozzles is equal to the pore density of the outer ring, and the pore density of the inner ring of some nozzles is smaller than that of the outer ring. The pore density of the circle; use all nozzles to deposit a partial thickness of plasma-enhanced ethyl orthosilicate film layer in sequence. The present invention obtains a plasma-enhanced ethyl orthosilicate film layer of a desired shape by setting the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring and the number of nozzles with the pore density of the inner ring smaller than the outer ring. , thereby adapting to the needs of various semiconductor devices for the shape of the plasma-enhanced tetraethyl orthosilicate film layer.

The above are only preferred embodiments of the present invention and do not limit the present invention in any way. Any person skilled in the technical field who makes any form of equivalent substitution or modification to the technical solutions and technical contents disclosed in the present invention shall not deviate from the technical solutions of the present invention. The contents still fall within the protection scope of the present invention.

Claims (10)

1. A plasma-enhanced deposition method of ethyl orthosilicate film layer, which is characterized in that it includes: Several nozzles with different pore distributions are provided according to the shape of the plasma-enhanced ethylene orthosilicate film layer to be formed. Each nozzle is divided into an inner ring and an outer ring located outside the inner ring. Several nozzles with different pore distributions are provided. Among them, the pore density of the inner ring of some of the nozzle heads is equal to the pore density of the outer ring, and the pore density of the inner ring of some of the nozzle heads is smaller than the pore density of the outer ring; and All of the showerheads were used to sequentially deposit a partial thickness film layer of plasma enhanced tetraethyl orthosilicate. 2. The deposition method of plasma-enhanced ethylene orthosilicate film layer as claimed in claim 1, characterized in that, before using all the nozzles to sequentially deposit a partial thickness of the plasma-enhanced ethyl orthosilicate film layer, Including: providing reactive gas for forming a plasma-enhanced tetraethyl orthosilicate film layer to all nozzles. 3. The deposition method of plasma-enhanced ethyl orthosilicate film layer as claimed in claim 1, characterized in that the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is greater than the pore density of the inner ring and is less than that of the outer ring. When the number of nozzles has a pore density, the plasma-enhanced tetraethyl orthosilicate film layer formed has a shape of thick in the middle and thin on the edge. 4. The deposition method of plasma enhanced ethyl orthosilicate film layer as claimed in claim 1, characterized in that the number of nozzles with the pore density of the inner ring equal to the pore density of the outer ring is less than or equal to the pore density of the inner ring is less than When the number of nozzles has a pore density in the outer ring, the plasma-enhanced tetraethyl orthosilicate film layer formed has a shape with a thin middle and a thick edge. 5. The method for depositing a plasma-enhanced ethylene orthosilicate film layer according to claim 1, characterized in that all the nozzles are detachably installed on the top of the deposition equipment. 6. The plasma-enhanced deposition method of ethyl orthosilicate film layer according to claim 1, characterized in that the cross-sections of all the pores are circular and have the same radius. 7. The plasma-enhanced deposition method of tetraethyl orthosilicate film layer according to claim 1, characterized in that the cross-section of the nozzle is circular. 8. The deposition method of plasma enhanced ethyl orthosilicate film layer as claimed in claim 7, characterized in that the area from the center of the circle to one-third of the radius is divided into an inner ring, and the nozzle outside the outer ring as an outer ring. 9. The method for depositing a plasma-enhanced tetraethyl orthosilicate film layer according to claim 8, wherein the inner ring is circular and the outer ring is annular. 10. The deposition method of plasma-enhanced ethyl orthosilicate film layer as claimed in claim 8, characterized in that when the pore density of the inner ring of the nozzle is less than the pore density of the outer ring, the pores of the inner ring The number is one eleventh of the number of air holes in the outer ring.