CN116991008A

CN116991008A - A device processing method

Info

Publication number: CN116991008A
Application number: CN202210436630.8A
Authority: CN
Inventors: 陈海峰; 孙飞
Original assignee: Guangyi Intelligent Tech Suzhou Co Ltd
Current assignee: Guangyi Intelligent Tech Suzhou Co Ltd
Priority date: 2022-04-25
Filing date: 2022-04-25
Publication date: 2023-11-03

Abstract

This application discloses a device processing method, which relates to the technical field of electrochromism. The device processing method includes: providing at least one diaphragm base material, the diaphragm base material includes at least one base layer group, the base layer group includes a stacked conductive layer and a base layer; opening a plurality of layers on the base layer group The slot extends from the surface of the base layer away from the conductive layer to at least the surface of the conductive layer close to the base layer; and the slot is filled with conductive components. The device processing method provided by this application can reduce the processing difficulty of electrochromic devices and improve processing efficiency.

Description

Device processing method

Technical Field

The application relates to the technical field of electrochromic, in particular to a device processing method.

Background

Electrochromic phenomenon refers to the phenomenon that an electrochromic material is reversibly changed in color and transparency under the action of an externally applied electric field.

In the prior art, a step structure is formed on the side edge of the electrochromic device by laser cutting, edge tearing and other operations so as to expose the conductive layer, and then the conductive layer is electrically connected. In the laser cutting process, the cutting depth needs to be strictly controlled to prevent the conductive layer from being damaged due to too deep cutting or prevent the edge from being torn due to too shallow cutting, and the processing difficulty is certainly increased. In addition, after the tearing edge is completed, the residual electrolyte on the step structure needs to be erased. Therefore, in the existing electrochromic device processing method, when the conductive layer is exposed, the problems of high processing difficulty, complex process and the like exist, and the processing efficiency is affected.

Disclosure of Invention

The application provides a device processing method, which reduces the processing difficulty when a conductive layer is exposed and improves the processing efficiency.

The application provides:

a device processing method comprising:

providing at least one membrane substrate, wherein the membrane substrate comprises at least one basic layer group, and the basic layer group comprises a conductive layer and a basal layer which are arranged in a laminated manner;

a plurality of slotted holes are formed in the basic layer group, so that the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer;

and filling the slotted hole with a conductive component.

In the application, when the base layer group is perforated, the slotted hole extends from one side surface of the base layer away from the conductive layer to at least one side surface of the conductive layer close to the base layer, so that part of the structure of the conductive layer is exposed through the slotted hole. The depth of the slot hole can be allowed to have a certain floating range, so that the processing precision requirement when the conductive layer is exposed can be obviously reduced, and the processing difficulty is further reduced. In addition, in the process of opening the holes, the structure of the exposed conductive layer is free from the problem of residual electrolyte, so that wiping action is not needed, and compared with the prior art, the wiping step can be reduced. Therefore, the device processing method provided by the application can obviously reduce the processing difficulty when the conductive layer is exposed, simplify the operation steps and further improve the processing efficiency.

In some possible embodiments, the device processing method includes:

providing two membrane substrates, wherein the two membrane substrates comprise a basic layer group;

and a plurality of slotted holes are respectively formed on the two basic layer groups, and in the same basic layer group, the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer.

In some possible embodiments, the base layer group is provided with a plurality of slots from the side of the base layer away from the conductive layer.

In some possible embodiments, the forming a plurality of slots on two base layer groups includes:

coating a mask layer on one side of the conductive layer far away from the substrate layer;

forming a plurality of slotted holes on the basic layer group from one side of the conductive layer far away from the substrate layer, so that the slotted holes penetrate through the conductive layer and the substrate layer in the same basic layer group;

and removing the mask layer.

In some possible embodiments, the slot penetrates the conductive layer and the base layer in the same base layer group, and the device processing method further includes:

A transition layer group is arranged on one side of the conductive component far away from the substrate layer;

the roughness of the surface of the transition layer group, which is far away from the conductive component, is smaller than that of the surface of the conductive component, which is close to the conductive layer.

In some possible embodiments, the disposing a transition layer group on a side of the conductive assembly remote from the base layer includes:

and coating gloss oil on one side of the conductive component far away from the substrate layer to form a gloss oil layer.

laying a first bus bar on one side of the conductive component away from the substrate layer;

and coating gloss oil on one side of the first bus bar far away from the conductive component, and forming a gloss oil layer.

a first bus bar is routed on a side of the conductive assembly remote from the base layer.

In some possible embodiments, the first bus bar is made in synchronization with the conductive component with which it is in contact.

In some possible embodiments, the device processing method further comprises:

and combining the two basic layer groups, and forming a color-changing layer group between the two conductive layers in the two basic layer groups.

In some possible embodiments, the combining the two base layer groups and forming a color-changing layer group between the two conductive layers in the two base layer groups comprises:

coating an electrochromic layer on one side of the conductive layer far away from the basal layer in one basic layer group so as to form an electrochromic substrate;

coating a counter electrode layer on one side of the conductive layer far away from the base layer in the other base layer group to form a counter electrode substrate;

the counter electrode substrate is bonded to the electrochromic substrate through an electrolyte, and an electrolyte layer is formed between the electrochromic layer and the counter electrode layer.

In some possible embodiments, the device processing method further comprises:

a second bus bar is arranged on one side of the basal layer away from the conductive layer in one basic layer group, and the second bus bar is connected with each conductive component in the basic layer group;

and a third bus bar is arranged on one side of the basal layer away from the conductive layer in the other basal layer group, and the third bus bar is connected with each conductive component in the basal layer group.

In some possible embodiments, the device processing method includes:

providing a membrane substrate, wherein the membrane substrate comprises a first basic group, a color-changing group and a second basic group which are sequentially stacked, and the conductive layers in the two basic groups are close to the color-changing group;

and sequentially arranging a plurality of slotted holes on the first basic group and the second basic group, wherein in the same basic group, the slotted holes extend from one side surface of the substrate layer far away from the conductive layer to at least one side surface of the conductive layer close to the substrate layer.

In some possible embodiments, the device processing method further comprises:

a second bus bar is arranged on one side, far away from the color-changing layer group, of the first base layer group, and the second bus bar is connected with each conductive component in the first base layer group;

and a third bus bar is arranged on one side of the second basic layer group away from the color-changing layer group, and the third bus bar is connected with each conductive component in the second basic layer group.

In some possible embodiments, the second bus bar is made in synchronization with the conductive component on the first base layer group;

The third bus bar is made in synchronization with the conductive component on the second basic block set.

In some possible embodiments, the filling the slot with the conductive element includes:

smearing conductive medium on the inner wall of the slot hole;

and filling the gaps of the conductive medium with curing glue.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 illustrates a flow diagram of a device processing method in some embodiments;

FIG. 2 is a schematic flow chart of a device processing method in the first embodiment;

FIG. 3 is a schematic cross-sectional view of a base layer group in accordance with the first embodiment;

FIG. 4 illustrates a flow diagram of an opening in a base layer group in some embodiments;

FIG. 5 is a schematic cross-sectional view of a base layer packet after opening in some embodiments;

FIG. 6 is a schematic diagram of a slot layout structure in some embodiments;

FIG. 7 is a schematic view showing a layout structure of slots in another embodiment;

FIG. 8 is a schematic top view of various arrangements and shapes of slots in further embodiments;

FIG. 9 is a schematic view showing various cross-sectional structures of slots in some embodiments;

FIG. 10 illustrates a schematic cross-sectional structure of an electrochromic substrate in some embodiments;

FIG. 11 is a schematic cross-sectional view showing the structure of a counter electrode substrate in some embodiments;

FIG. 12 is a flow chart of filling conductive elements in slots in some embodiments;

FIG. 13 illustrates a schematic cross-sectional structure of a conductive assembly in some embodiments;

FIG. 14 illustrates a schematic top view of a conductive assembly in some embodiments;

FIG. 15 is a schematic cross-sectional view of a two-base-layer composite sheet according to some embodiments;

FIG. 16 illustrates a schematic diagram of the arrangement of secondary and tertiary bus bars in some embodiments;

FIG. 17 is a schematic top view of a secondary bus bar and slot in some embodiments;

FIG. 18 is a schematic diagram showing the arrangement of the second bus bar and the third bus bar in other embodiments;

Fig. 19 is a schematic cross-sectional structure of an electrochromic device in accordance with the first embodiment;

FIG. 20 illustrates a schematic cross-sectional view of a transition layer packet in some embodiments;

FIG. 21 is a schematic flow chart illustrating the arrangement of transition layer groups in other embodiments;

FIG. 22 is a schematic cross-sectional view of a transition layer packet in other embodiments;

fig. 23 is a schematic view showing a partial cross-sectional structure of an electrochromic device in a second embodiment;

FIG. 24 is a schematic cross-sectional view of a transition group of layers in still other embodiments;

FIG. 25 shows a schematic flow chart of a method of processing a three-device in accordance with an embodiment;

FIG. 26 is a schematic cross-sectional view showing the structure of a membrane substrate in the third embodiment;

FIG. 27 is a schematic view showing a sectional structure of a membrane substrate after opening in accordance with the third embodiment;

FIG. 28 is a schematic cross-sectional view showing the structure of the membrane substrate after filling the conductive member in the membrane substrate in the third embodiment;

fig. 29 is a schematic view showing a partial cross-sectional structure of an electrochromic device in a third embodiment.

Description of main reference numerals:

10-a base layer group; 101-slots; 10 a-a first set of foundation layers; 10 b-a second set of foundation layers; 11-a substrate layer; 11 a-a first substrate layer; 11 b-a second substrate layer; 12-a conductive layer; 12 a-a first conductive layer; 12 b-a second conductive layer; 13-a protective film; 20-a conductive component; 21-a conductive medium; 22-fixing piece; 30-a color-changing layer group; 31-electrochromic layer; 32-an electrolyte layer; 33-a counter electrode layer; 41-a second bus bar; 42-a third bus bar; 50-a protective component; 51 a-a first bottom plate; 51 b-a second floor; 52-a seal; 53 a-a first adhesive layer; 53 b-a second adhesive layer; 60-transition layer groups; 60 a-a first transition group of layers; 60 b-a second transition group of layers; 61-a first bus bar; 62-gloss oil layer.

Detailed Description

Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.

As shown in fig. 3 and 6, a cartesian coordinate system is established defining that the length direction of the electrochromic device is parallel to the direction shown by the x-axis, the width direction of the electrochromic device is parallel to the direction shown by the y-axis, and the thickness direction of the electrochromic device is parallel to the direction shown by the z-axis. It is to be understood that the above definitions are only for ease of understanding the relative positional relationship of the various components in the electrochromic device and should not be construed as limiting the application.

The embodiment provides a device processing method which can be used for processing electrochromic devices, can reduce the processing difficulty of the electrochromic devices and improve the processing efficiency.

As shown in fig. 1, 3, 5-11, and 26-28, the device processing method may include:

s10, providing at least one membrane substrate, wherein the membrane substrate comprises at least one basic layer group 10, and the basic layer group 10 comprises a base layer 11 and a conductive layer 12 which are arranged in a stacked manner.

Wherein, the substrate layer 11 may be a transparent substrate layer, and the substrate layer 11 may be made of any one or more of polyethylene terephthalate (Polyethylene terephthalate, PET), cyclic olefin copolymer, or cellulose triacetate. In some embodiments, the conductive layer 12 may be a transparent conductive layer. Specifically, the conductive layer 12 may be made of one or more materials selected from Indium-Tin Oxide (ITO), zinc-aluminum Oxide (Aluminum Zinc Oxide, AZO), fluorine doped Tin Oxide (Fluorine Doped Tin Oxide, FTO), silver nanowires, graphene, carbon nanotubes, metal grids, or silver nanoparticles.

S20, a plurality of slots 101 are formed in the base layer set 10, such that the slots 101 extend from a side surface of the base layer 11 away from the conductive layer 12 to at least a side surface of the conductive layer 12 close to the base layer 11.

The base layer 10 is provided with a slot 101, so that a part of the structure of the conductive layer 12 is exposed through the slot 101. It will be appreciated that the depth of the slot 101 may allow a certain floating range along the thickness of the electrochromic device, ensuring that part of the structure of the conductive layer 12 is exposed relative to the slot 101. Therefore, compared with the traditional processing technology, the processing precision requirement when the conductive layer 12 is exposed can be obviously reduced, the processing difficulty is further reduced, and the processing efficiency is improved.

In addition, in the process of forming the slot 101 in the base layer group 10, electrolyte and the like are not attached to the exposed structure surface of the conductive layer 12, and further operations such as wiping are not required, so that operation procedures can be saved, and the processing efficiency can be further improved.

S30, filling the conductive component 20 in the slot 101.

Wherein, when the conductive element 20 is filled in the slot 101, the conductive element 20 can contact and electrically connect with the exposed structure surface of the conductive layer 12 relative to the slot 101. Thus, electrical tapping of the conductive layer 12 may be accomplished through the conductive assembly 20.

Example 1

As shown in fig. 2, in an embodiment, a device processing method is provided, which may include:

s110, providing two film substrates, wherein each film substrate comprises a basic layer set 10.

Referring to fig. 10 and 11, one of the film substrates includes a first base layer set 10a, and the other film substrate includes a second base layer set 10b. In an embodiment, the first base layer group 10a may include a first base layer 11a and a first conductive layer 12a that are stacked. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b that are stacked.

S120, a plurality of slots 101 are formed on the two base layer sets 10, respectively, and in the same base layer set 10, the slots 101 extend from the surface of the base layer 11 away from the conductive layer 12 to at least the surface of the conductive layer 12 near the base layer 11.

In the embodiment, the same operation manner can be adopted to form a plurality of slots 101 on the two base layer sets 10, and the details of forming the slots 101 on the first base layer set 10a will be described as an example.

As shown in fig. 5, in some embodiments, the first base layer group 10a may be apertured from a side of the first conductive layer 12a remote from the first base layer 11a. Accordingly, the slot 101 penetrates both the first conductive layer 12a and the first base layer 11a.

As shown in fig. 4, in some embodiments, the forming a plurality of slots 101 on the first base layer group 10a may specifically include the following steps:

s121, a mask layer is coated on a side of the first conductive layer 12a away from the first base layer 11a.

Wherein the mask layer is made of photoresist, silicon dioxide (SiO ₂ ) Or ultraviolet curing glue, etc.

S122, a plurality of slots 101 are opened on the first base layer group 10a from the side of the first conductive layer 12a away from the first base layer 11a, so that the slots 101 penetrate the first conductive layer 12a and the first base layer 11a.

Wherein, the partial structure of the first conductive layer 12a on the inner wall of the slot 101 can be exposed. It will be appreciated that during the opening process, corresponding dust is generated on the open side. In the embodiment, the mask layer is disposed on the side of the first conductive layer 12a away from the first substrate layer 11a, so that dust can be effectively prevented from adhering to the surface of the side of the first conductive layer 12a away from the first substrate layer 11a, and further, the subsequent processing and working performance of the electrochromic device are prevented from being affected.

As shown in fig. 6, a plurality of slots 101 may be formed in the first base layer group 10a, and the plurality of slots 101 may be disposed near a side of the first base layer group 10a and may be arranged in a row along an extending direction of the side. Illustratively, the plurality of slots 101 may be disposed adjacent to one side in the electrochromic device width direction in the first base layer group 10 a. It will be appreciated that each side of the first base layer set 10a may overlap each side of the electrochromic device.

In other embodiments, as shown in fig. 7, a plurality of slots 101 may be disposed adjacent to one side of the first base layer group 10a along the length of the electrochromic device. Of course, in other embodiments, the slots 101 may be disposed near any two or three sides of the first foundation layer set 10a, i.e. the slots 101 are disposed near any two or three sides of the first foundation layer set 10 a. Alternatively, the slots 101 may be circumferentially arranged around the first base layer group 10 a.

As shown in FIG. 6, in some embodiments, the slots 101 may be circular holes and the slots 101 may be uniformly spaced. In an embodiment, the vertical distance d between the centers of two adjacent slots 101 may be set to 2.0mm to 30.0mm, and exemplary, the vertical distance d between the centers of two adjacent slots 101 may be set to 2.0mm, 2.75mm, 5.0mm, 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc.

In some embodiments, the distance m between the slot 101 and the side of the electrochromic device to which it is close may be set to 0.5mm to 20.0mm. The distance m may specifically refer to the vertical distance between the center of the slot 101 nearest to the side and the side. By way of example, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent may be set to 0.5mm, 1.5mm, 5.2mm, 6.0mm, 8.0mm, 11.0mm, 14.5mm, 16.0mm, 17.0mm, 19.5mm, 20.0mm, etc.

In other embodiments, as shown in fig. 8, the slot 101 may be a circular arc hole such as an elliptical hole, a circular hole, or a polygonal hole such as a triangular hole, a quadrangular hole, a pentagonal hole, or a penta-star hole. The plurality of slots 101 may be present in an ordered or disordered arrangement within a routing region that may be disposed adjacent to and extend along a side of the electrochromic device.

In other embodiments, as shown in fig. 8, the slot 101 may be an elongated hole and extend in the width direction of the electrochromic device. The plurality of slots 101 may be arranged in a width direction of the electrochromic device and in a plurality of columns. The plurality of slots 101 arranged in the width direction of the electrochromic device may be referred to as a column. Wherein, two adjacent rows of slots 101 can be arranged in a staggered way. Accordingly, the vertical distance d between the centers of two adjacent rows of slots 101 may refer to the vertical distance between the centers of two adjacent rows of slots 101.

In other embodiments, as shown in fig. 8, a slot 101 may be formed in the first base layer set 10 a. The slot 101 may be disposed near one side of the electrochromic device, and the slot 101 may be an elongated hole disposed along the side.

As shown in fig. 6, in the embodiment, the dimension n of the slot 101 may be set to 0.3mm to 3.0mm along the length direction of the electrochromic device, and exemplary, the dimension n of the slot 101 may be set to 0.3mm, 0.45mm, 0.9mm, 1.2mm, 1.55mm, 2.1mm, 2.5mm, 2.75mm, 2.8mm, 3.0mm, etc. The dimension h of the slot 101 may be set to 0.3mm to 5.0mm in the width direction of the electrochromic device, and exemplary dimensions h of the slot 101 may be set to 0.3mm, 0.6mm, 1.0mm, 1.3mm, 1.5mm, 1.85mm, 2.0mm, 2.3mm, 2.65mm, 2.9mm, 3.4mm, 3.5mm, 4.0mm, 4.2mm, 4.6mm, 4.85mm, 5.0mm, etc. Wherein the length direction of the electrochromic device may be parallel to the width direction of the web for processing the first basic-group 10 a. The width direction of the electrochromic device may be parallel to the winding direction of the roll used to process the first base layer group 10 a.

In some embodiments, slots 101 may be formed in the first base layer group 10a by laser lithography, roll-to-roll punching, or the like.

S123, removing the mask layer.

After the first basic block 10a is perforated, the remaining mask layer on the first conductive layer 12a may be removed. For example, when the mask layer is formed of a gum material such as an ultraviolet curing gum, the remaining mask layer may be removed by a lift-off operation.

In other embodiments, as shown in fig. 9, the first base layer group 10a may also be perforated from a side of the first base layer 11a remote from the first conductive layer 12a. Accordingly, dust generated during the opening process can be prevented from adhering to a side surface of the first conductive layer 12a remote from the first base layer 11 a. Accordingly, the slot 101 may penetrate through both the first substrate layer 11a and the first conductive layer 12a. Of course, the slot 101 may penetrate only the first base layer 11a, and a position of the first conductive layer 12a, which is opposite to the slot 101, in a side surface of the first base layer 11a may be exposed. Alternatively, the slot 101 may extend from a side surface of the first base layer 11a remote from the first conductive layer 12a to a middle portion of the first conductive layer 12a in a thickness direction of the electrochromic device.

S130, filling the conductive component 20 in the slot 101.

As shown in fig. 10, 11 and 13, specifically, the slots 101 on the two base layer groups 10 are filled with the conductive elements 20, and each slot 101 in the two base layer groups 10 may be filled with the conductive element 20.

Of course, in other embodiments, filling of the conductive elements 20 in the partial slots 101 is not precluded on the same base layer group 10.

As shown in fig. 10 and 11, in some embodiments, the conductive assembly 20 may include a conductive medium 21. Step S130 may include: a liquid conductive medium 21 is injected into each slot 101, and the conductive medium 21 is cured.

It will be appreciated that the liquid conductive medium 21 may be injected from the slot 101 near one end opening of the substrate layer 11 or conductive layer 12, and that the conductive medium 21 may move to the other end under the force of gravity. Wherein the conductive medium 21 will contact and make electrical connection with the exposed structures in the conductive layer 12. After the liquid conductive medium 21 is solidified, the conductive medium 21 can be fixed in the corresponding slot 101, so as to realize the fixed connection between the conductive medium 21 and the base layer group 10, and further ensure the stable electrical connection between the conductive medium 21 and the conductive layer 12 contacted by itself. In the embodiment, the slot 101 may be filled with the conductive medium 21, so as to ensure sufficient contact and electrical connection between the conductive medium 21 and the corresponding conductive layer 12, and further electrical connection and disconnection operation of the conductive medium 21 may be facilitated.

In some embodiments, the conductive medium 21 may be selected from conductive silver paste, conductive liquid, or the like.

As shown in fig. 12 to 14, in other embodiments, the conductive component 20 may include a conductive medium 21 and a fixing member 22 located inside the conductive medium 21. Accordingly, step 130 may include:

s131, the conductive medium 21 is coated on the inner wall of the slot 101.

Specifically, a liquid conductive medium 21 is injected from an opening at one end of the slot 101, so that the conductive medium 21 is hung on the inner wall of the slot 101, and a layer of conductive medium 21 is attached to the inner wall of the slot 101. Among them, the conductive medium 21 may be a conductive liquid or the like.

And S132, filling the gaps of the conductive medium 21 with the curing adhesive.

It can be understood that when the conductive medium 21 is injected into the slot 101 and the conductive medium 21 forms a wall on the inner wall of the slot 101, a certain space can be reserved in the slot 101, and the space is located on one side of the conductive medium 21 away from the inner wall of the slot 101, i.e. the conductive medium 21 is in a tubular structure, and a certain gap can be formed in the conductive medium 21. In an embodiment, the gaps between the conductive media 21 may be filled with a cured paste. When the curing glue is cured, the corresponding fixing piece 22 can be formed, the fixing piece 22 can provide corresponding supporting function for the conductive medium 21, the problem that the conductive medium 21 is separated from the slot hole 101 to fall off is avoided, and the stability of the structure is improved. Wherein, the curing glue can be ultraviolet curing glue or thermosetting glue, etc. The viscosity of the cured adhesive can be 6000 Pa.s to 10000 Pa.s.

As shown in fig. 2, in some embodiments, the device processing method further includes:

and S140, the two basic layers 10 are combined into a piece, and the color-changing layer group 30 is formed between the two conductive layers 12 in the two basic layers.

As shown in fig. 10, 11 and 15, in particular, an electrochromic layer 31 may be coated on a side of the first conductive layer 12a remote from the first base layer 11a to form an electrochromic substrate. A counter electrode layer 33 is coated on a side of the second conductive layer 12b remote from the second base layer 11b to form a counter electrode substrate. The counter electrode substrate is bonded to the electrochromic substrate through the electrolyte, and an electrolyte layer 32 is formed between the counter electrode substrate and the electrochromic substrate. Wherein a side of the electrochromic layer 31 remote from the first conductive layer 12a is bonded to a side of the electrolyte layer 32, and a side of the counter electrode layer 33 remote from the second conductive layer 12b is bonded to a side of the electrolyte layer 32 remote from the electrochromic layer 31.

And S150, bus bars are distributed on one side of the two basic layer groups 10 far from the color-changing layer group 30, and the bus bars are connected with the conductive assemblies 20 on the basic layer group 10 which is close to the bus bars.

As shown in fig. 16, specifically, the second bus bar 41 may be disposed on a side of the first base layer 11a away from the color change layer group 30, and the second bus bar 41 may be electrically connected to each conductive member 20 on the first base layer group 10 a. A third bus bar 42 is disposed on a side of the second base layer 11b remote from the color change layer set 30, and the third bus bar 42 is electrically connected to each conductive element 20 on the second base layer set 10 b.

It will be appreciated that the second and third bus bars 41, 42 may be used to electrically connect external devices, such as a controller, power supply, etc., for power and control of the electrochromic device.

In some embodiments, the second bus bar 41 and the third bus bar 42 may each be made of conductive silver paste, copper foil, conductive paste, or the like.

In other embodiments, when the second bus bar 41 and the third bus bar 42 are formed by curing a liquid conductive material such as conductive silver paste or conductive adhesive, the second bus bar 41 can be manufactured synchronously with the conductive component 20 on the first basic block 10a, specifically, the second bus bar 41 is manufactured synchronously with the conductive medium 21 on the first basic block 10 a. Likewise, the third bus bar 42 may be fabricated in synchronization with the conductive medium 21 on the second base layer group 10 b. That is, step S150 and step S130 are performed simultaneously.

Referring again to fig. 17, in some embodiments, the projection of each conductive element 20 on the first basic block 10a onto the plane of the second bus bar 41 is on the second bus bar 41, i.e. the second bus bar 41 completely covers all conductive elements 20 on the first basic block 10a, so as to ensure good electrical connection between the second bus bar 41 and each conductive element 20 on the first basic block 10 a.

Likewise, the conductive elements 20 of each of the second basic block 10b are projected onto the third bus bar 42 in the plane of the third bus bar 42. That is, the third bus bar 42 completely covers all of the conductive elements 20 on the second base group 10b to ensure good electrical connection of the third bus bar 42 to each conductive element 20 on the second base group 10 b.

Referring again to fig. 3, in some embodiments, the two base layer sets 10 may further include a protective film 13, and the protective film 13 may be located on the base layer 11 away from the conductive layer 12. It will be appreciated that the protective film 13 may be peeled off from the corresponding base layer 11 before the second bus bar 41 and the third bus bar 42 are manufactured.

As shown in fig. 17, in some embodiments, the second bus bar 41 may be disposed opposite the third bus bar 42, i.e., the projection of the second bus bar 41 onto the plane on which the third bus bar 42 lies is located on the third bus bar 42. Correspondingly, the conductive elements 20 on the two base layer groups 10 are also oppositely arranged.

As shown in fig. 18, in other embodiments, the second bus bar 41 and the third bus bar 42 may be disposed in a staggered manner, that is, the second bus bar 41 and the third bus bar 42 may be disposed near opposite side edges of the electrochromic device. Correspondingly, the conductive assemblies 20 on the two base layer groups 10 can be arranged in a staggered manner, so that the requirement on the operation precision of the two base layer groups 10 in sheet forming can be reduced, the processing difficulty is reduced, and the processing efficiency is improved.

In other embodiments, the second bus bar 41 and the third bus bar 42 may also be fabricated before the two base layer assembly 10 is formed, that is, step S150 is performed between steps S140.

s160, setting the protective assembly 50.

Referring to fig. 19 again, specifically, an adhesive material is applied to a side of the first substrate layer 11a away from the first conductive layer 12a to form a first adhesive layer 53a, and the first base plate 51a is pressed on a side of the first adhesive layer 53a away from the first substrate layer 11 a. An adhesive material is coated on the side of the second substrate layer 11b away from the second conductive layer 12b to form a second adhesive layer 53b, and the second base plate 51b is pressed on the side of the second adhesive layer 53b away from the second substrate layer 11 b.

In addition, a seal 52 is filled between the first bottom plate 51a and the second bottom plate 51b, and the seal 52 is provided around the color-changing layer group 30 and the two base layer groups 10 in the circumferential direction. It will be appreciated that the guard assembly 50 may be comprised of a first base plate 51a, a second base plate 51b and a seal 52 to provide protection for the finished color shifting layer set 30 and the two base layer sets 10. Meanwhile, the protection component 50 can also prevent water vapor and the like from invading into the color-changing layer group 30 and the two base layer groups 10 so as to realize a water vapor isolation effect.

In some embodiments, the first bottom plate 51a and the second bottom plate 51b may be transparent glass. The seal 52 may be made of a glue that is resistant to the effects of water and oxygen, such as any one of pressure sensitive adhesive, hot melt glue, ultraviolet curable glue, heat curable glue, or ultraviolet heated dual curable glue.

In some embodiments, both the first adhesive layer 53a and the second adhesive layer 53b may be made of optically transparent adhesive materials, such as optical cement (Optically Clear Adhesive, OCA), solid optical cement (Solid Optically Clear Adhesive, SCA), ionic intermediate film (Surper Safe Glas, SGP), liquid optical cement (Liquid Optical Clear Adhesive, LOCA), and the like.

Example two

As shown in fig. 20 and fig. 22 to 24, in the first embodiment, when the slot 101 penetrates the base layer 11 and the conductive layer 12 in the same base layer group 10, the device processing method may further include, between step S130 and step S140:

s170, a transition layer group 60 is disposed on a side of the conductive element 20 away from the base layer 11.

Specifically, the first transition layer group 60a may be disposed on a side of the first conductive layer 12a away from the first base layer 11a, and the first transition layer group 60a covers each conductive component 20 on the first base layer group 10 a. Likewise, a second transition layer group 60b may be disposed on a side of the second conductive layer 12b away from the second base layer 11b, such that the second transition layer group 60b overlies each of the conductive elements 20 on the second base layer group 10 b. In an embodiment, the transition layer groups 60 may be disposed according to the positions of the conductive elements 20, and accordingly, the transition layer groups 60 may also be elongated.

In some embodiments, the roughness of the surface of the transition layer group 60 on the side away from the conductive element 20 is less than the roughness of the surface of the conductive element 20 on the side near the conductive layer 12.

It can be appreciated that, when the conductive element 20 is filled in the slot 101, the roughness of the surface of the conductive element 20 near the conductive layer 12 cannot be guaranteed, which affects the subsequent coating of the counter electrode layer 33 and the electrochromic layer 31 on the conductive layer 12, and affects the flatness of the counter electrode layer 33 and the electrochromic layer 31. In the embodiment, the transition layer group 60 is disposed on the side of the conductive component 20 close to the conductive layer 12, and the roughness of the surface of the transition layer group 60 away from the conductive layer 12 is smaller than that of the surface of the conductive component 20 close to the conductive layer 12, so that the flatness of the electrode layer 33 and the electrochromic layer 31 after subsequent coating can be improved, and the working performance of the electrochromic device can be ensured.

As shown in fig. 20, in some embodiments, the transition layer group 60 may include a gloss oil layer 62. Accordingly, the varnish may be coated on a side of the conductive layer 12 far from the substrate layer 11 by a silk screen process, and the varnish is disposed at a position corresponding to the conductive component 20, and the varnish may be cured to form the varnish layer 62. In some embodiments, gloss layer 62 may be made of uv curable gloss oil or polyurethane gloss oil, and the like. It is understood that the gloss oil has a high smoothness, so that flatness can be ensured when the electrochromic layer 31 and the counter electrode layer 33 are subsequently coated.

In some embodiments, gloss oil layer 62 may also be made of conductive gloss oil. The conductive varnish may be varnish doped with a conductive material such as metal powder, and the varnish layer 62 is conductive. Therefore, the plurality of conductive components 20 dispersed on the base layer group 10 can be connected through the gloss oil layer 62, so that the conduction efficiency of the electrochromic device is improved, and the color changing speed of the electrochromic device is further improved.

In one embodiment, each conductive element 20 on the base layer set 10 has a projection onto the plane of the gloss layer 62 on the gloss layer 62. This ensures that the gloss oil layer 62 and each conductive element 20 of the base layer group 10 are uniformly and effectively connected.

As shown in fig. 21-23, in other embodiments, the transition layer group 60 may include a first bus bar 61 and a gloss layer 62 that are stacked. Wherein the first bus bar 61 is located between the gloss oil layer 62 and the conductive component 20. Accordingly, step S170 may include:

s171, the first bus bar 61 is laid out on the side of the conductive member 20 away from the base layer 11.

The first bus bar 61 may be made of a conductive material having light transmittance, such as conductive paste or conductive liquid. The projection of each conductive element 20 in the base layer group 10 on the plane of the first bus bar 61 is located on the first bus bar 61. Thus, a stable and reliable connection of the first bus bar 61 to each conductive element 20 on the base layer group 10 can be ensured.

In other embodiments, the primary bus bar 61 may be fabricated in synchronization with the conductive medium 21 on the base layer group 10.

And S172, coating varnish on the side of the first bus bar 61 away from the conductive component 20, and forming a varnish layer 62.

The gloss oil layer 62 may be made of conductive gloss oil or nonconductive gloss oil. In addition, the projections of the first bus bars 61 on the plane of the gloss oil layer 62 are all located on the gloss oil layer 62. Thus, the roughness of the surface of the transition layer group 60 on the side away from the conductive member 20 can be ensured to satisfy the requirement, and the flatness in the subsequent application of the electrochromic layer 31 and the counter electrode layer 33 can be ensured.

In still other embodiments, as shown in fig. 24, the transition group 60 may include a first bus bar 61. The first bus bar 61 may be made of a conductive material having light transmittance such as a conductive paste or a conductive liquid. Specifically, a conductive material such as a conductive paste or a conductive liquid may be coated on a side of the conductive layer 12 away from the base layer 11 and cured to form the first bus bar 61, and the first bus bar 61 is contacted and electrically connected with each conductive component 20 on the base layer group 10. In addition, the projection of each conductive element 20 in the base layer group 10 on the plane of the first bus bar 61 is located on the first bus bar 61, so as to ensure stable and reliable connection between the first bus bar 61 and each conductive element 20 on the base layer group 10. Therefore, the plurality of conductive components 20 dispersed on the base layer group 10 can be connected through the first bus bar 61, so that the conduction efficiency of the electrochromic device is improved, and the color changing speed of the electrochromic device is further improved. In other embodiments, the primary bus bar 61 may be fabricated in synchronization with the conductive medium 21 on the base layer group 10.

It will be appreciated that the primary bus bar 61 and the gloss oil layer 62 are both light transmissive, allowing light to pass through. When the two base layer sets 10 are subsequently laminated, the electrolyte layer 32 in the color-changing layer set 30 can be conveniently cured by ultraviolet curing to ensure the performance of the electrochromic device.

In some embodiments, the thickness of both transition layer groups 60 is less than or equal to 15 μm along the thickness direction of the electrochromic device, avoiding that the thickness of the electrochromic layer 31 and the counter electrode layer 33 is too large to affect the color change speed of the electrochromic device. By way of example, the thickness of the two transition groups 60 may be set to 2 μm, 5 μm, 7.5 μm, 9.2 μm, 10 μm, 13 μm, 14.5 μm, 15 μm, etc., respectively.

Example III

As shown in fig. 25 and 26, in an embodiment, a device processing method is provided, which may include:

s210, a film substrate is provided, wherein the film substrate comprises a first basic group 10a, a color-changing group 30 and a second basic group 10b which are sequentially stacked, and conductive layers 12 in the two basic groups 10 are both arranged close to the color-changing group 30.

In some embodiments, the structure of the two base layer groups 10 may be arranged symmetrically. Specifically, the first base layer group 10a may include a first base layer 11a and a first conductive layer 12a, and the first conductive layer 12a is located between the first base layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b, the second conductive layer 12b being located between the second base layer 11b and the color shifting layer group 30.

The color-changing layer group 30 may include an electrochromic layer 31, an electrolyte layer 32, and a counter electrode layer 33, which are sequentially stacked. Wherein, a side surface of the electrochromic layer 31 away from the electrolyte layer 32 may be attached to a side surface of the first conductive layer 12a away from the first base layer 11 a. Accordingly, a side surface of the counter electrode layer 33 remote from the electrolyte layer 32 may be bonded to a side surface of the second conductive layer 12b remote from the second base layer 11 b.

S220, sequentially forming a plurality of slots 101 on the first base layer group 10a and the second base layer group 10b, and in the same base layer group 10, extending the slots 101 from the surface of the base layer 11 away from the conductive layer 12 to at least the surface of the conductive layer 12 near the base layer 11.

As shown in fig. 27, specifically, the base layer group 10 may be subjected to the opening operation from the side of the base layer 11 away from the conductive layer 12. The slot 101 may penetrate through the base layer 11 and the conductive layer 12 in the same base layer group 10 in the thickness direction of the electrochromic device. Accordingly, a portion of the structure of the conductive layer 12 on the inner wall of the slot 101 can be exposed.

In other embodiments, the slot 101 may extend through the base layer 11 in the thickness direction of the electrochromic device, and the end of the slot 101 away from the base layer 11 may extend to the middle of the conductive layer 12 in the same set of base layer groups 10, i.e., the slot 101 does not extend through the conductive layer 12. Alternatively, the slot 101 may extend through only the base layer 11 in the thickness direction of the electrochromic device, and accordingly, the conductive layer 12 may be exposed near the surface of one side of the base layer 11 opposite to the slot 101.

In some embodiments, the number, positions, shapes, etc. of the slots 101 on the first foundation layer set 10a and the second foundation layer set 10b may be the same as those of the first embodiment, and will not be described again.

In the embodiment, the two base layer 10 is perforated after being combined with the sheet, so that the influence on the flatness of the electrochromic layer 31 and the counter electrode layer 33 can be obviously reduced, and the working performance of the electrochromic device is ensured.

S230, filling the conductive component 20 in the slot 101.

As shown in fig. 28, specifically, the slots 101 on the two base layer groups 10 are sequentially filled with the conductive elements 20, so that each slot 101 in the two base layer groups 10 is filled with the conductive element 20. During processing, the conductive component 20 can be filled from the opening of the end of the slot 101 away from the color-changing layer group 30. In the embodiment, the specific manner of filling the conductive element 20 in the slot 101 is similar to that in the first embodiment, and will not be described herein.

As shown in fig. 25 and 29, the device processing method further includes:

s240, a second bus bar 41 is arranged on the side of the first basic block 10a away from the color-changing block 30, the second bus bar 41 is connected with each conductive component 20 in the first basic block 10a, a third bus bar 42 is arranged on the side of the second basic block 10b away from the color-changing block 30, and the third bus bar 42 is connected with each conductive component 20 in the second basic block 10 b.

In the embodiment, the layout of the second bus bar 41 and the third bus bar 42 may be the same as that of the first embodiment, and will not be described here again.

As shown in fig. 25, the device processing method further includes:

s250, setting the protective assembly 50.

In the embodiment, the specific arrangement of the protection component 50 may be the same as that of the first embodiment, and will not be described herein.

Example IV

Also provided in the embodiments is a device that can be fabricated by the device fabrication methods provided in the embodiments. Wherein the device may be an electrochromic device.

As shown in fig. 19, 26 and 27, the electrochromic device may include a first base layer group 10a, a color-changing layer group 30 and a second base layer group 10b stacked in this order.

Wherein the first basic layer group 10a comprises a first base layer 11a and a first conductive layer 12a. The first conductive layer 12a is located between the first base layer 11a and the color-changing layer group 30. The second base layer group 10b may include a second base layer 11b and a second conductive layer 12b, the second conductive layer 12b being located between the second base layer 11b and the color shifting layer group 30.

The color-changing layer group 30 may include an electrochromic layer 31, an electrolyte layer 32, and a counter electrode layer 33, which are sequentially stacked. Wherein the electrochromic layer 31 is located between the electrolyte layer 32 and the first conductive layer 12a.

In some embodiments, slots 101 are formed in each of the first foundation layer set 10a and the second foundation layer set 10 b. In the first base layer group 10a, the slot 101 may extend from a side of the first base layer 11a away from the first conductive layer 12a at least to a side of the first conductive layer 12a near the first base layer 11a. In some embodiments, the slot 101 may extend through both the first base layer 11a and the first conductive layer 12a.

In other embodiments, the slot 101 may extend through the first substrate layer 11a. The slot 101 may also extend to the middle of the first conductive layer 12a in the thickness direction of the electrochromic device.

In the second base layer group 10b, the slot 101 may extend from a side of the second base layer 11b away from the second conductive layer 12b at least to a side of the second conductive layer 12b near the second base layer 11b. In some embodiments, the slot 101 may extend through both the second base layer 11b and the second conductive layer 12b.

In other embodiments, the slot 101 may extend through the second substrate layer 11b. The slot 101 may also extend to the middle of the second conductive layer 12b in the thickness direction of the electrochromic device.

As shown in fig. 6, in some embodiments, the first base layer group 10a may be provided with a plurality of slots 101, and the plurality of slots 101 may be disposed near a side of the electrochromic device and may be sequentially arranged along the side. Illustratively, the plurality of slots 101 may be disposed near one side in the width direction of the electrochromic device with uniform spacing.

In other embodiments, as shown in fig. 7, a plurality of slots 101 may be provided near one side along the length of the electrochromic device. Of course, in other embodiments, the plurality of slots 101 may be disposed adjacent to any two or three sides of the electrochromic device, i.e., the plurality of slots 101 are disposed adjacent to any two or three sides of the electrochromic device. Alternatively, the plurality of slots 101 may be routed around the circumference of the electrochromic device.

In some embodiments, as shown in FIG. 6, the slot 101 may be a circular hole. In an embodiment, the distance d between two adjacent slots 101 may be set to 2.0mm to 30.0mm, and exemplary, the distance d between two adjacent slots 101 may be set to 2.0mm, 2.75mm, 5.0mm, 8.5mm, 12.0mm, 16.0mm, 20.5mm, 24.0mm, 26.5mm, 28.0mm, 30.0mm, etc. The distance d between two adjacent slots 101 may refer to the distance between the centers of the two slots 101.

In some embodiments, the distance m between the slot 101 and the side of the electrochromic device to which it is close may be set to 0.5mm to 20.0mm. The distance m may refer to the distance between the center of the slot 101 nearest to the side and the side. By way of example, the distance m between the slot 101 and the side of the electrochromic device to which it is adjacent may be set to 0.5mm, 1.5mm, 5.2mm, 6.0mm, 8.0mm, 11.0mm, 14.5mm, 16.0mm, 17.0mm, 19.5mm, 20.0mm, etc.

In other embodiments, as shown in fig. 8, the slot 101 may be a circular hole, an elliptical hole, a circular hole, or a polygonal hole such as a triangular hole, a quadrangular hole, a pentagonal hole, or a pentagram hole. The plurality of slots 101 may be present in an ordered or disordered arrangement within a routing region that may be disposed adjacent to and extend along a side of the electrochromic device.

In other embodiments, as shown in fig. 8, the slots 101 may be elongated holes, and the slots 101 may be arranged in a plurality of rows. The plurality of slots 101 arranged in the width direction of the electrochromic device may be referred to as a column. Along the width of the electrochromic device. Wherein, two adjacent rows of slots 101 can be arranged in a staggered way.

In other embodiments, as shown in fig. 8, a slot 101 may be formed in the first base layer set 10 a. The slot 101 may be disposed near one side of the electrochromic device, and the slot 101 may be an elongated hole extending along the side.

As shown in fig. 15 and 16, further, a conductive element 20 is disposed in any slot 101, and the conductive element 20 can be electrically connected to the conductive layer 12 that is in contact with itself. Thus, electrical tapping of the conductive layer 12 may be accomplished through the conductive assembly 20. In some embodiments, the conductive element 20 may include a conductive medium 21, and the conductive medium 21 may fill the slot 101.

In other embodiments, as shown in fig. 13, conductive assembly 20 may include a conductive medium 21 and a fixture 22. The conductive medium 21 may be disposed around the circumference of the fixing member 22, and the conductive medium 21 may be sandwiched between the fixing member 22 and the inner wall of the slot 101. The conductive member 20 may have a size equal to the depth of the slot 101 in the thickness direction of the electrochromic device.

As shown in fig. 16, in some embodiments, a second bus bar 41 is further disposed on a side of the first base layer group 10a away from the color-changing layer group 30, and the second bus bar 41 is electrically connected to each conductive component 20 in the first base layer group 10 a. In the embodiment, the projection of each conductive element 20 on the first basic block 10a on the plane of the second bus bar 41 is located on the second bus bar 41.

Correspondingly, a third bus bar 42 is further arranged on the side of the second basic layer group 10b away from the color-changing layer group 30, and the third bus bar 42 is electrically connected with each conductive component 20 in the second basic layer group 10 b. In the embodiment, the projection of each conductive element 20 on the second basic block 10b on the plane of the third bus bar 42 is located on the third bus bar 42.

As shown in fig. 20, in some embodiments, a first transition layer group 60a is further provided on a side of the first conductive layer 12a remote from the first base layer 11a, the first transition layer group 60a covering all conductive components 20 in the first base layer group 10 a. Correspondingly, the side of the second conductive layer 12b remote from the second substrate layer 11b is provided with a second group of transition layers 60b, the second group of transition layers 60b covering all conductive elements 20 in the second group of base layers 10 b. In an embodiment, the structures of the two transition layer groups 60 may be the same.

In some embodiments, the transition layer group 60 may include a gloss oil layer 62. The projection of each conductive element 20 on the same base layer set 10 onto the plane of the gloss oil layer 62 is located on the gloss oil layer 62. In some embodiments, gloss oil layer 62 may be made of conductive gloss oil. Therefore, the plurality of conductive components 20 dispersed on the same basic group 10 can be connected through the gloss oil layer 62, so that the conduction efficiency of the electrochromic device is improved, and the color changing speed of the electrochromic device is further improved.

As shown in fig. 22, in other embodiments, the transition layer group 60 includes a first bus bar 61 and a gloss layer 62 that are stacked, wherein the first bus bar 61 is located between the gloss layer 62 and the conductive assembly 20, i.e., the gloss layer 62 is adjacent to the electrochromic layer group 30. The projection of each conductive element 20 in the same basic block 10 on the plane of the first bus bar 61 is located on the first bus bar 61. And, the projections of the first bus bars 61 on the plane of the gloss oil layer 62 are all located on the gloss oil layer 62.

In still other embodiments, as shown in fig. 24, the transition group 60 may include a first bus bar 61. Each conductive element 20 on the same base layer group 10 is electrically connected with a corresponding first bus bar 61. And, the projection of each conductive element 20 on the same basic block 10 on the plane of the first bus bar 61 is located on the first bus bar 61. Therefore, the plurality of conductive components 20 dispersed on the base layer group 10 can be connected through the first bus bar 61, so that the conduction efficiency of the electrochromic device is improved, and the color changing speed of the electrochromic device is further improved.

In an embodiment, the transition layer group 60 has light transmittance, i.e., the transition layer group 60 allows light to pass through. The electrolyte layer 32 in the color changing layer group 30 can be conveniently cured by ultraviolet curing during the process of manufacturing the electrochromic device to ensure the performance of the electrochromic device.

As shown in fig. 19, in some embodiments, the electrochromic device further includes a guard assembly 50. The guard assembly 50 may include a first base plate 51a, a second base plate 51b, and a seal 52. Wherein, the first bottom plate 51a is adhered to the side of the first substrate layer 11a away from the first conductive layer 12a through the first adhesive layer 53 a. The second base plate 51b is adhered to the side of the second base layer 11b remote from the second conductive layer 12b by a second adhesive layer 53 b. The seal 52 may be disposed between the first base plate 51a and the second base plate 51b, and the seal 52 is disposed around the color-changing layer set 30 and the two base layer sets 10 at the same time. That is, the color-changing layer set 30 and the two base layer sets 10 are enclosed in a protective assembly 50, which is protected by the protective assembly 50. Meanwhile, the protection component 50 can also prevent water vapor and the like from invading into the color-changing layer group 30 and the two base layer groups 10 so as to realize a water vapor isolation effect.

Example five

Embodiments also provide a dimming device comprising an electrochromic device as provided in any of the embodiments. In an embodiment, the dimming device may be one of a dimming window, a rearview mirror, a display panel, and the like.

While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.

Claims

1. A device processing method, comprising:

and filling the slotted hole with a conductive component.

2. The device processing method according to claim 1, characterized in that the device processing method comprises:

3. The device processing method according to claim 2, wherein the base layer group is provided with a plurality of the slots from a side of the base layer away from the conductive layer.

4. The device processing method according to claim 2, wherein the forming a plurality of slots in two base layer groups respectively includes:

and removing the mask layer.

5. The device processing method of claim 2, wherein the slot penetrates the conductive layer and the base layer in the same base layer group, the device processing method further comprising:

6. The device processing method of claim 5, wherein disposing a transition layer group on a side of the conductive assembly remote from the base layer comprises:

7. The device processing method of claim 5, wherein disposing a transition layer group on a side of the conductive assembly remote from the base layer comprises:

8. The device processing method of claim 2, wherein the slot penetrates the conductive layer and the base layer in the same base layer group, the device processing method further comprising:

9. The device processing method according to claim 7 or 8, wherein the first bus bar is made in synchronization with the conductive member with which it is in contact.

10. The device processing method according to any one of claims 2 to 8, characterized in that the device processing method further comprises:

11. The device processing method of claim 10, wherein assembling the two base layer groups and forming a color change layer group between the two conductive layers in the two base layer groups comprises:

12. The device processing method according to claim 2, characterized in that the device processing method further comprises:

13. The device processing method according to claim 1, characterized in that the device processing method comprises:

14. The device processing method of claim 13, further comprising:

15. The device processing method of claim 14, wherein the second bus bar is made in synchronization with the conductive component on the first foundation layer group;

16. The device processing method according to claim 1, 2 or 13, wherein the filling of the slot with the conductive member includes:

smearing conductive medium on the inner wall of the slot hole;

and filling the gaps of the conductive medium with curing glue.