CN116939939A - Microwave plasma device - Google Patents
Microwave plasma device Download PDFInfo
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- CN116939939A CN116939939A CN202310904924.3A CN202310904924A CN116939939A CN 116939939 A CN116939939 A CN 116939939A CN 202310904924 A CN202310904924 A CN 202310904924A CN 116939939 A CN116939939 A CN 116939939A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000010453 quartz Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 6
- 210000002381 plasma Anatomy 0.000 abstract description 55
- 230000005684 electric field Effects 0.000 abstract description 21
- 238000009826 distribution Methods 0.000 abstract description 3
- 238000011160 research Methods 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/463—Microwave discharges using antennas or applicators
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/28—Cooling arrangements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
Abstract
The application relates to the field of plasma physics and application science research, and discloses a microwave plasma device, which comprises a resonant cavity, a vacuum cavity, a microwave generator, a circulator, a three-pin microwave tuner, a microwave mode converter and a short-circuit piston which are sequentially connected, wherein two ends of the resonant cavity are respectively connected with the microwave mode converter and the vacuum cavity, a microwave antenna extending into the resonant cavity is arranged on the microwave mode converter, a quartz window is arranged between the resonant cavity and the vacuum cavity, and the quartz window is used for isolating the resonant cavity and the vacuum cavity; the two ends of the vacuum cavity are larger than the middle of the vacuum cavity in size along the axial direction of the vacuum cavity. The mode ensures that the electric field distribution in the middle of the vacuum cavity is strongest so as to excite and generate stable plasmas at the position, thereby avoiding generating secondary plasmas in other areas.
Description
Technical Field
The embodiment of the application relates to the field of research of plasma physics and application science, in particular to a microwave plasma device.
Background
The microwave plasma technology is a novel technology developed in recent years, and is widely applied to the fields of semiconductors, waste treatment and the like. The production principle is that high-energy microwaves are adopted to ionize the gas to generate a large amount of active ions, the active ions react with each other to regenerate new materials, or the energy of the active ions is adopted to carry out the cleaning and etching procedures.
In general, microwave plasma has two important technical indicators: the size of the plasma and the ion concentration of the plasma are generated. In general, the higher the gas pressure, the higher the concentration of plasma ions generated, and the higher the microwave energy required, and the faster the processing speed for material synthesis or other processes. The size of the plasma is often limited by the wavelength of the microwaves, and typically the diameter of the plasma generated is no greater than half a wavelength. When the gas pressure is low or the microwave energy is high, a plurality of plasmas can be generated by taking a plurality of wavelength periods as the center, and a large plasma area is formed by interdiffusion among the plasmas.
However, the inventor found that in the process of implementing the present application, the existing microwave plasma apparatus is mainly divided into the following two types: 1. the normal pressure plasma torch generates a larger electric field by compressing the waveguide, and generates plasma in the quartz cylinder by 'ignition' of the metal tip, and continuously introduces gas, so that on one hand, the gas component of the plasma is maintained, and on the other hand, the gas takes away a large amount of heat, thereby playing a role in heat dissipation and protecting the quartz tube from being melted at high temperature. 2. The low-pressure plasma is characterized in that the cavity is required to be maintained in a certain low-pressure state, then a certain standing wave mode is formed in the cavity, or a metal structure is put into the cavity to generate a local strong electric field area so as to excite gas in the cavity to ionize and generate stable plasma.
Defects of the prior art:
1. the normal pressure plasma torch is unstable, the synthetic material has more impurities, and particularly, a metal wire is required to be ignited during ignition, so that pollutants are easy to be introduced.
2. The normal pressure plasma microwave is fed in from the side surface of the glass tube, the electric field distribution is uneven, carbon deposition is easy to generate on the wall of the quartz glass tube, regular cleaning is needed, otherwise, the equipment cannot be used for a long time.
3. The low-pressure plasma has lower density, a plurality of modes in the cavity are uncontrollable, the ion density is uneven, and the low-pressure plasma is easy to locally overheat or generate secondary plasma.
Accordingly, there is a need for a microwave plasma device that solves the above-mentioned problems.
Disclosure of Invention
In order to solve the technical problems, the embodiment of the application provides a microwave plasma device for generating stable plasmas and reducing the pollution caused by introducing impurities.
The embodiment of the application solves the technical problems and provides the following technical proposal: the utility model provides a microwave plasma device, including resonant cavity, vacuum chamber and microwave generator, circulator, three pin microwave tuner, microwave mode converter, the short circuit piston that connect gradually, the both ends of resonant cavity are connected respectively the microwave mode converter with the vacuum chamber, be equipped with on the microwave mode converter and stretch into the inside microwave antenna of resonant cavity, the resonant cavity with be equipped with quartz window between the vacuum chamber, quartz window is used for keeping apart the resonant cavity with the vacuum chamber, wherein, follow the axial of vacuum chamber, the size at vacuum chamber both ends is all greater than the size at vacuum chamber middle part.
In some embodiments, along the axial direction of the vacuum cavity, the vacuum cavity comprises a first vacuum cavity, a second vacuum cavity and a third vacuum cavity which are sequentially communicated, one end of the first vacuum cavity, which is away from the second vacuum cavity, is connected with the quartz window, wherein the inner diameter of the first vacuum cavity and the inner diameter of the third vacuum cavity are both larger than the inner diameter of the second vacuum cavity.
In some embodiments, the first vacuum chamber has an inner diameter that gradually increases from one end toward the second vacuum chamber to the other end of the first vacuum chamber, and/or the third vacuum chamber has an inner diameter that gradually increases from one end toward the second vacuum chamber to the other end of the third vacuum chamber.
In some embodiments, the vacuum chamber includes a transition chamber connected between the quartz window and the first vacuum chamber, the transition chamber in communication with the first vacuum chamber.
In some embodiments, the inner wall of the second vacuum chamber is provided with a quartz tube.
In some embodiments, the microwave generator is configured to generate microwaves having a wavelength L, the second vacuum chamber having an inner diameter in the range of: l/1.31 to L/0.82, and/or
The inner wall of the second vacuum cavity is provided with a quartz tube, the microwave generator is configured to generate microwaves with the wavelength L, and the inner diameter range of the second vacuum cavity is as follows: l/(1.31×1.87) to L/0.82.
In some embodiments, the vacuum pump is further included, an exhaust port is arranged at one end of the vacuum cavity, which is away from the resonant cavity, and the vacuum pump is connected with the exhaust port.
In some embodiments, a collecting tank is arranged at one end of the vacuum cavity, which is away from the resonant cavity, the collecting tank is communicated with the vacuum cavity, and the exhaust port is arranged on the collecting tank.
In some embodiments, a separator is included that is in communication between the collection tank and the vacuum pump.
In some embodiments, the outer wall of the vacuum chamber is provided with water cooling channels.
The embodiment of the application has the beneficial effects that:
compared with the prior art, the sizes of the two ends of the vacuum cavity in the microwave plasma device are larger than the size of the middle part of the vacuum cavity, so that the electric field intensity of the middle part of the vacuum cavity is strongest, stable plasmas are generated by excitation at the position, and secondary plasmas are prevented from being generated in other areas of the vacuum cavity; the electric field mode of the microwave in the vacuum cavity is TM01 mode, the electric field at the central position of the cavity is strongest in the mode, the electric field of the cavity wall and the quartz glass tube wall is almost zero, and plasma can be well prevented from etching the cavity wall and the quartz glass tube; the electric field of the wall of the quartz glass tube is extremely small and uniform, and carbon deposition is not generated; in addition, the microwave plasma device does not need ignition, so that the problem of introducing impurities due to ignition is avoided.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below. It is evident that the drawings described below are only some embodiments of the present application and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
FIG. 1 is a schematic view of a microwave plasma device according to an embodiment of the present application;
fig. 2 is an electric field distribution diagram of the microwave plasma apparatus shown in fig. 1.
Reference numerals in the drawings are as follows:
1. a microwave generator; 2. a circulator; 3. a three pin microwave tuner; 4. a microwave mode converter; 5. a shorting piston; 6. a microwave cavity; 61. a resonant cavity; 62. a vacuum chamber; 621. a first vacuum chamber; 622. a second vacuum chamber; 623. a third vacuum chamber; 624. a transition chamber; 7. a microwave antenna; 8. a quartz window; 9. an air inlet; 10. a quartz tube; 11. a first water cooling channel; 12. a second water cooling channel; 13. a first water inlet and outlet; 14. a second water inlet and outlet; 15. a vacuum pump; 16. an exhaust port; 17. a collecting tank; 18. a separator.
Detailed Description
In order that the application may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. It will be understood that when an element is referred to as being "fixed" to/connected to "another element, it can be directly on the other element or one or more intervening elements may be present therebetween. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or one or more intervening elements may be present therebetween. The terms "top," "bottom," and the like as used in this specification denote an orientation or positional relationship based on that shown in the drawings, merely to facilitate description of the application and to simplify the description, and do not denote or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the application. Furthermore, the terms "first" and "second," etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In addition, the technical features mentioned in the different embodiments of the application described below can be combined with one another as long as they do not conflict with one another.
In addition, the technical features mentioned in the different embodiments of the application described below can be combined with one another as long as they do not conflict with one another.
Referring to fig. 1, fig. 1 shows a microwave plasma device according to one embodiment of the present application, the microwave plasma device includes a microwave generator 1, a circulator 2, a three-pin microwave tuner 3, a microwave mode converter 4 and a shorting piston 5, which are sequentially connected, a microwave cavity 6 is disposed below the microwave mode converter 4, the microwave cavity includes a resonant cavity 61 and a vacuum cavity 62, two ends of the resonant cavity 61 are respectively connected to the microwave mode converter 4 and the vacuum cavity 62, a microwave antenna 7 extending into the resonant cavity 61 is disposed on the microwave mode converter 4, a quartz window 8 is disposed between the resonant cavity 61 and the vacuum cavity 62, and the quartz window 8 is used for isolating the resonant cavity 61 and the vacuum cavity 62. Along the axial direction H of the vacuum chamber 62, the dimensions of both ends of the vacuum chamber 62 are larger than the dimensions of the middle of the vacuum chamber 62. The axial direction H of the vacuum chamber 62 is the direction in which the microwave mode converter 4, the resonant chamber 61 and the vacuum chamber 62 are sequentially distributed.
The middle portion of the vacuum chamber refers to a portion located between two ends of the vacuum chamber, for example, a portion located between a top end and a bottom end of the vacuum chamber.
The microwave generator 1 is used for emitting a microwave power source, the circulator 2 is a device for isolating microwaves, the output and the reflected microwaves are isolated, the reflected microwaves are prevented from entering the microwave generator 1 to cause damage of the microwave power source, the three-pin microwave tuner 3 is used for adjusting load impedance matching, microwave reflection is reduced, the microwave mode converter 4 and the microwave antenna 7 are used for converting microwaves in a TE01 mode in a rectangular waveguide into microwaves in a coaxial line TEM mode, the short-circuit piston 5 is used for adjusting the energy transmission power of the microwave mode converter 4, and the microwave reflection power can be controlled by adjusting the three-pin tuner 3 and the short-circuit piston 5 to ensure optimal microwave transmission.
The microwave power source couples microwave energy to the microwave mode converter 4 through the circulator 2, the three pin microwave tuner 3 and the shorting piston 5, couples TEM waves in the coaxial line into the resonant cavity 61 of the cylindrical cavity through the microwave antenna 7 to form TM01 mode in the circular waveguide, and couples to the vacuum cavity 62 through the quartz window 8 to generate plasma.
In some embodiments, the shorting piston 5 is a piston structure that is adjustable with a screw.
It will be appreciated that the cavity 61 is at atmospheric pressure.
In some embodiments, the resonant cavity 61 is typically made of a metal material such as stainless steel, and the vacuum cavity 62 is typically made of a metal material such as aluminum alloy or stainless steel.
In some embodiments, along the axial direction H of the vacuum chamber 62, the vacuum chamber 62 includes a first vacuum chamber 621, a second vacuum chamber 622, and a third vacuum chamber 623 that are sequentially connected, and one end of the first vacuum chamber 621 facing away from the second vacuum chamber 622 is connected to the quartz window 8.
In some embodiments, the inner diameter of the first vacuum chamber 621 and the inner diameter of the third vacuum chamber 623 are both greater than the inner diameter of any portion of the second vacuum chamber 622 in a direction perpendicular to the axial direction H of the vacuum chamber 62.
In some embodiments, the second vacuum chamber 622 is a cylindrical chamber (i.e., the inner diameter of any portion of the second vacuum chamber is the same), and the first vacuum chamber 621 and/or the third vacuum chamber 623 are frustoconical chambers. Specifically, the first vacuum chamber 621 is a truncated cone-shaped chamber, and along the axial direction H of the vacuum chamber 62, the inner diameter of the first vacuum chamber 621 gradually increases from one end toward the second vacuum chamber 622 to the other end of the first vacuum chamber 621; the third vacuum chamber 623 is a truncated cone-shaped chamber, and the inner diameter of the third vacuum chamber 623 gradually increases from one end toward the second vacuum chamber 622 to the other end thereof.
In some embodiments, the vacuum chamber 62 further comprises a transition chamber 624, the transition chamber 624 being connected between the quartz window 8 and the first vacuum chamber 621, the transition chamber 624 being in communication with the first vacuum chamber 621.
In some embodiments, the transition cavity 624 has the same inner diameter as the resonator cavity 61 in a direction perpendicular to the axial direction H of the vacuum cavity 621, i.e., the transition cavity 324 is a cylindrical cavity.
Referring to fig. 2, in the embodiment of the present application, the second vacuum chamber 622 has the smallest inner diameter in the vacuum chamber, so that the electric field strength is the largest, and thus stable plasma can be generated at this position in the whole air pressure range from high vacuum to standard air pressure, and secondary plasma cannot be generated in other chambers of the vacuum chamber 62.
Referring back to fig. 1, in some embodiments, the vacuum chamber 62 is provided with an air inlet 9 near the quartz window 8, and the process gas is injected into the vacuum chamber 62 through the air inlet 9, and the microwave energy excites the low-pressure gas to generate plasma. The process gas comprises CH 4 ，H 2 ，CO 2 ，O 2 ，N 2 Ar, etc.
It will be appreciated that the air inlet may be provided in plurality or the air inlet may be provided around the vacuum chamber, i.e. the air inlet is an annular air inlet.
In some embodiments, the microwave generator 1 is configured to generate microwaves having a wavelength L, and to ensure that the second vacuum chamber 622 in the vacuum chamber 62 is in TM01 mode and at maximum electric field strength, the second vacuum chamber 622 has an inner diameter ranging from: L/1.31-L/0.82. For example, the wavelength of the microwave with the frequency of 4250MHz is 122mm, and the inner diameter of the second vacuum chamber 622 is in the range of: 93 mm-148 mm.
In some embodiments, to prevent the plasma etching of the metal chamber walls from introducing impurities, the inner wall of the second vacuum chamber 622 is provided with a quartz tube 10.
In some embodiments, considering the effect of the quartz tube 10 on wavelength, to ensure that the second vacuum chamber 622 in the vacuum chamber 62 is in TM01 mode and at maximum electric field strength, the inner diameter of the second vacuum chamber 622 is in the range: l/(1.31×1.87) to L/0.82. For example, the wavelength of the microwave with the frequency of 4250MHz is 122mm, and the inner diameter of the second vacuum chamber 622 is in the range of: 49.8 mm-148 mm. In addition, when the electric field mode at the second vacuum chamber 622 is TM01 mode, the electric field intensity at the center of the quartz tube 10 is strongest, the tube wall electric field intensity is extremely small and uniform, the etching of the quartz tube wall by the plasma is reduced, and the occurrence of carbon deposition on the tube wall can be well prevented.
In some embodiments, to dissipate heat from the vacuum chamber 62, the outer walls of the vacuum chamber 62 are provided with water cooling channels.
Specifically, the water cooling channel comprises a first water cooling channel 11, a second water cooling channel 12, a first water inlet and outlet 13 and a second water inlet and outlet 14, wherein the first water cooling channel 11 is connected with the first water inlet and outlet 13, the second water cooling channel 12 is connected with the second water inlet and outlet 14, and the first water cooling channel 11 and the second water cooling channel 12 are wound on the outer wall of the vacuum cavity 62 and are communicated. Cooling water respectively enters from the first water inlet and outlet 13 and the second water inlet and outlet 14, then flows in the first water cooling channel 11 and the second water cooling channel 12, and after heat exchange, the cooling water is discharged from the first water inlet and outlet 13 and the second water inlet and outlet 14.
In some embodiments, the microwave plasma device comprises a vacuum pump 15 connected to the vacuum chamber 62, specifically, an exhaust port 16 is provided at an end of the vacuum chamber 62 facing away from the resonant cavity 61, and the vacuum pump 15 is connected to the exhaust port 16 for evacuating the vacuum chamber 62 and adjusting the air pressure in the vacuum chamber 62.
According to the microwave plasma device provided by the embodiment of the application, the air pressure of the vacuum cavity is regulated by the vacuum pump, and the energy transmission power of the microwave mode converter is regulated by the short-circuit piston, so that the vacuum cavity spontaneously generates plasma in the second vacuum cavity, an ignition device is not needed, and impurity pollution is avoided.
In some embodiments, a collection tank 17 is disposed at an end of the vacuum chamber 62 facing away from the resonant cavity 61, and the vacuum pump 15 is in communication with the vacuum chamber 62 via the collection tank 17, wherein the collection tank 17 is configured to collect a portion of the reaction products in the vacuum chamber 62 having a relatively high mass.
Through the arrangement of the material collecting tank 17, the material collecting tank 17 can primarily separate components in the reaction product according to the weight of the reaction product in the vacuum cavity 62, and large-particle materials can be prevented from entering the vacuum pump 15 at the rear end, so that the service life of the vacuum pump 15 is prolonged.
In some embodiments, the exhaust port 16 is provided in the collection tank 17.
In some embodiments, the microwave plasma device further comprises a separator 18, the separator 18 being in communication between the collection tank 17 and the vacuum pump 15, the separator 18 being for separating solids in the extracted gas.
The sizes of the two ends of the vacuum cavity in the microwave plasma device are larger than the size of the middle part of the vacuum cavity, so that the electric field intensity of the middle part of the vacuum cavity is strongest, stable plasmas are generated by excitation at the position, and secondary plasmas are prevented from being generated in other areas of the vacuum cavity; the electric field mode of the microwave in the vacuum cavity is TM01 mode, the electric field at the central position of the cavity is strongest in the mode, the electric field of the cavity wall and the quartz glass tube wall is almost zero, and plasma can be well prevented from etching the cavity wall and the quartz glass tube; the electric field of the wall of the quartz glass tube is extremely small and uniform, and carbon deposition is not generated; in addition, the microwave plasma device does not need ignition, so that the problem of introducing impurities due to ignition is avoided.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting; the technical features of the above embodiments or in the different embodiments may also be combined within the idea of the application, the steps may be implemented in any order, and there are many other variations of the different aspects of the application as described above, which are not provided in detail for the sake of brevity; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the application.
Claims (10)
1. The microwave plasma device is characterized by comprising a resonant cavity, a vacuum cavity, and a microwave generator, a circulator, a three-pin microwave tuner, a microwave mode converter and a short-circuit piston which are sequentially connected, wherein two ends of the resonant cavity are respectively connected with the microwave mode converter and the vacuum cavity, a microwave antenna extending into the resonant cavity is arranged on the microwave mode converter, a quartz window is arranged between the resonant cavity and the vacuum cavity, and the quartz window is used for isolating the resonant cavity and the vacuum cavity;
the two ends of the vacuum cavity are larger than the middle of the vacuum cavity in size along the axial direction of the vacuum cavity.
2. A microwave plasma device according to claim 1, wherein,
along the axial direction of the vacuum cavity, the vacuum cavity comprises a first vacuum cavity, a second vacuum cavity and a third vacuum cavity which are sequentially communicated, and one end of the first vacuum cavity, which is away from the second vacuum cavity, is connected with the quartz window;
the inner diameter of the first vacuum cavity and the inner diameter of the third vacuum cavity are both larger than the inner diameter of the second vacuum cavity.
3. A microwave plasma device according to claim 2, wherein,
the first vacuum chamber gradually increases from one end facing the second vacuum chamber to the inner diameter of the other end of the first vacuum chamber, and/or the third vacuum chamber gradually increases from one end facing the second vacuum chamber to the inner diameter of the other end of the third vacuum chamber.
4. A microwave plasma device according to claim 2, wherein,
the vacuum cavity comprises a transition cavity, the transition cavity is connected between the quartz window and the first vacuum cavity, and the transition cavity is communicated with the first vacuum cavity.
5. A microwave plasma device according to any one of claims 2 to 4, wherein,
and a quartz tube is arranged on the inner wall of the second vacuum cavity.
6. A microwave plasma device according to any one of claims 2 to 4, wherein,
the microwave generator is configured to generate microwaves of wavelength L, and the second vacuum chamber has an inner diameter ranging from: l/1.31 to L/0.82, and/or
The inner wall of the second vacuum cavity is provided with a quartz tube, the microwave generator is configured to generate microwaves with the wavelength L, and the inner diameter range of the second vacuum cavity is as follows: l/(1.31×1.87) to L/0.82.
7. A microwave plasma device according to claim 1, further comprising a vacuum pump, wherein an exhaust port is provided at an end of the vacuum chamber facing away from the resonant cavity, the vacuum pump being connected to the exhaust port.
8. A microwave plasma device according to claim 7, wherein,
the vacuum cavity deviates from the one end of resonant cavity is equipped with the collection jar, collection jar with the vacuum cavity intercommunication, the gas vent is located collection jar.
9. A microwave plasma device according to claim 8, comprising a separator in communication between the header tank and the vacuum pump.
10. A microwave plasma device according to claim 1, wherein,
the outer wall of the vacuum cavity is provided with a water cooling channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310904924.3A CN116939939A (en) | 2023-07-21 | 2023-07-21 | Microwave plasma device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310904924.3A CN116939939A (en) | 2023-07-21 | 2023-07-21 | Microwave plasma device |
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| Publication Number | Publication Date |
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| CN116939939A true CN116939939A (en) | 2023-10-24 |
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| CN202310904924.3A Pending CN116939939A (en) | 2023-07-21 | 2023-07-21 | Microwave plasma device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025090012A1 (en) * | 2023-10-27 | 2025-05-01 | 益科斯有限公司 | Reactor for treating gaseous pollutants, and head assembly thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025090012A1 (en) * | 2023-10-27 | 2025-05-01 | 益科斯有限公司 | Reactor for treating gaseous pollutants, and head assembly thereof |
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