CN1169229C - Resonator-enhanced n-type gallium arsenide mirror for far-infrared detectors - Google Patents
Resonator-enhanced n-type gallium arsenide mirror for far-infrared detectors Download PDFInfo
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- CN1169229C CN1169229C CNB02150783XA CN02150783A CN1169229C CN 1169229 C CN1169229 C CN 1169229C CN B02150783X A CNB02150783X A CN B02150783XA CN 02150783 A CN02150783 A CN 02150783A CN 1169229 C CN1169229 C CN 1169229C
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 22
- 238000001451 molecular beam epitaxy Methods 0.000 abstract 2
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012821 model calculation Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000013332 literature search Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
一种谐振腔增强的n型砷化镓远红外探测器的反射镜属于光电探测器领域。本发明提供了一种采用分子束外延生长制备的远红外探测器的反射镜。顶部反射镜由探测器与空气形成的界面形成。底部反射镜由底部电极层和它下面的多周期的非掺杂/掺杂的砷化镓层共同组成，反射镜底部电极层(1)的厚度为3000A，浓度为2×1018cm-3，底部掺杂(3)的n型砷化镓的厚度为1.8μm，浓度为3×1018cm-3，非掺杂的n型砷化镓(2)层的厚度为1.45μm，非掺杂(2)/掺杂(3)的砷化镓的生长周期N＝1。本发明具有实质性特点和显著进步，可以通过分子束外延生长制备，具有很好的样品质量，可以应用到远红外波段，而且大大提供探测器的量子效率。
The invention relates to a reflection mirror of an n-type gallium arsenide far-infrared detector enhanced by a resonant cavity, which belongs to the field of photodetectors. The invention provides a reflection mirror of a far-infrared detector prepared by molecular beam epitaxy growth. The top mirror is formed by the detector's interface with air. The bottom mirror is composed of a bottom electrode layer and a multi-period undoped/doped gallium arsenide layer below it. The bottom electrode layer (1) of the mirror has a thickness of 3000A and a concentration of 2×10 18 cm -3 , the bottom-doped (3) n-type GaAs has a thickness of 1.8 μm and a concentration of 3×10 18 cm -3 , the non-doped n-type GaAs (2) layer has a thickness of 1.45 μm, and the non-doped The growth period N=1 for hetero(2)/doped(3) GaAs. The invention has substantive features and remarkable progress, can be prepared by molecular beam epitaxy, has good sample quality, can be applied to the far-infrared band, and greatly improves the quantum efficiency of the detector.
Description
Technical field
What the present invention relates to is a kind of speculum of far infrared deterctor, and the speculum of the n p type gallium arensidep far infrared deterctor that particularly a kind of resonant cavity strengthens belongs to field of photodetectors.
Background technology
Far infrared deterctor is because its extensive use on astrophysics, Infrared Physics and new material are explored becomes the focus of recent researches.In recent years, the proposition of the interior emission of novel homojunction far infrared detection notion and realization are greatly abundant and developed this field, and its principle is the work function difference of utilizing on the highly doped and non-doping homojunction interface, by interior light emission realization far infrared detection.The basic structure of homojunction detector mainly consists of the following components from top to bottom: multiply periodic emission layer/intrinsic layer; Bottom electrode layer and substrate.Have only the above part (being the detector cavity) of bottom electrode layer that photoelectric current is just had contribution.Compare with Conventional detectors, this kind detector has unique superiority, and promptly it can regulate arbitrarily by wavelength.At present, successfully realize based on the GaAs and the silicon homojunction far infrared deterctor of this conceptual design.Quantum efficiency is to weigh an important indicator of detector performance.The homojunction detector of having realized is not very good in the quantum efficiency of far infrared band, and quantum efficiency is obviously less than normal near cut-off wavelength.Therefore, the quantum efficiency that further significantly improves detector has become the task of top priority.Find by literature search, M.S. nl ü and S.Strite are at (1995) 607 pages of reports of J.Appl.Phys. (applicating physical magazine) the 78th volume, on photodetector, apply the quantum efficiency that the cavity resonator structure that is made of a pair of speculum (top and bottom mirror) can improve detector significantly, its principle be cavity resonator structure make incident light in cavity repeatedly the reflection and through the absorption region, thereby fully absorbed.But the application of resonant cavity also only is confined to near-infrared and middle Infrared Detectors at present, does not still have the trial of this respect on the far infrared deterctor.This is because the speculum of existing type can't be adapted to far infrared band (＞40 microns).With the Bragg reflective mirror is example, this speculum is made of the multicycle structure of the different material alternating growth of two kinds of refractive indexes, wherein the thickness of every layer material is that (λ 0 is the detector operation wavelength to λ 0/4n, n is the refractive index of material), even only grow one-period, its thickness generally also can surpass 10 microns, considers may going of material growth, so adopt the growth of homojunction detector obviously unrealistic with molecular beam epitaxial growth.On the other hand, exist free carrier to absorb at far infrared band, this makes the bottom electrode layer of homojunction detector itself not use as good bottom mirror.These factors make the enforcement of speculum on the homojunction far infrared deterctor run into certain difficulty, have limited quantum efficiency.
Summary of the invention
The objective of the invention is to overcome deficiency of the prior art, the quantum efficiency that is n p type gallium arensidep homojunction far infrared deterctor is on the low side, and Bragg reflective mirror and bottom electrode layer are as the unsatisfactory problem of speculum, a kind of speculum of n p type gallium arensidep far infrared deterctor of resonant cavity enhancing is provided, makes it improve the quantum efficiency of detector greatly.
Desirable speculum is exactly under feasible growth conditions, can improve the absorptivity in the detector cavity as far as possible.The present invention is achieved by the following technical solutions, the present invention adopts molecular beam epitaxial growth to prepare the speculum of the GaAs homojunction far infrared deterctor of resonant cavity enhancing, the top mirror of the homojunction far infrared deterctor that resonant cavity strengthens is formed by the interface that detector and air form, and the concrete structure of bottom mirror is from top to bottom: the gallium arsenide layer by bottom electrode layer (1) and the multiply periodic non-doping (2) below it/doping (3) is formed jointly.
The thickness of speculum bottom electrode layer is 3000 , and concentration is 2 * 10
18Cm
-3, the thickness of bottom doped n type GaAs is 1.8 μ m, concentration is 3 * 10
18Cm
-3, the thickness of non-doped n type gallium arsenide layer is 1.45 μ m, the growth cycle N=1 of the GaAs of non-doping/doping.
The present invention has substantive distinguishing features and marked improvement, and the present invention can prepare speculum by molecular beam epitaxial growth, has good sample quality, can be applied to far infrared band, and the quantum efficiency of detector is provided greatly.
Description of drawings
The mirror structure schematic diagram of the n p type gallium arensidep far infrared deterctor that Fig. 1 resonant cavity strengthens.
Embodiment
Further specify content of the present invention below in conjunction with example:
As shown in Figure 1, the top mirror of the n p type gallium arensidep far infrared deterctor that resonant cavity of the present invention strengthens is formed by the interface that detector and air form, and the concrete structure of bottom mirror is from top to bottom: the gallium arsenide layer by bottom electrode layer (1) and the multiply periodic non-doping (2) below it/doping (3) is formed jointly.
N p type gallium arensidep (Si doping) homojunction far infrared deterctor with the molecular beam epitaxial method growth is an example, and the concrete structure of detector is as follows: substrate is semi-insulated GaAs.GaAs (20 )/Al 20 cycles
0.30Ga
0.70On superlattice (SL) resilient coating of As (20 ), the bottom electrode layer (concentration 2 * 10 of 5000 that grow
18Cm
-3) and the detector body structure (emission layer (n in 10 cycles
+, 300 , 1 * 10
17Cm
-3) and non-doping intrinsic layer ~ 1000 ), (doping content is 2 * 10 to cover the top electrode layer of 3000 then
18Cm
-3).
According to specific speculum preparation method, adopt the actual parameter of the speculum of molecular beam epitaxial method growth to be: the thickness of bottom electrode layer (1) is 3000 , and concentration is 2 * 10
18Cm
-3, the thickness of the n p type gallium arensidep of bottom doping (3) is 1.8 μ m, concentration is 3 * 10
18Cm
-3, the thickness of the n p type gallium arensidep layer of non-doping (2) is 1.45 μ m, the growth cycle N=1 of the GaAs of non-doping (2)/doping (3).What need point out emphatically is, the detector that resonant cavity is strengthened is because bottom electrode layer and the non-doping/gallium arsenide layer of doping below it have been formed the bottom mirror of resonant cavity jointly.And have only the effect of speculum when the thickness of bottom electrode layer is 3000 dusts just the most desirable, and therefore, applying before and after the resonant cavity (speculum), the thickness parameter of bottom electrode layer needs to change to some extent.
Because the absorptivity in the detector cavity can not directly be measured, can only obtain by Fresnel coefficient matrix and De Lude Model Calculation, therefore to verify the reflection and the transmitted spectrum of the detector that actual effect of the present invention just must can directly be measured according to Fresnel coefficient matrix and De Lude Model Calculation, if can with fine meeting of experiment, the just actual absorptivity of the absorptivity in the detector cavity that obtains according to identical calculation of parameter so.By speculum being arranged and not having the experiment of detector of speculum and the reflection and the perspective spectrum of Theoretical Calculation, can draw both and meet substantially, therefore, the light absorption in the detector cavity that calculates must be reliable.According to calculating, the interior absorptivity of detector cavity that does not add resonant cavity only is 3.4%.After adding upper reflector, the absorptivity in the detector cavity has reached peak 10.7%, therefore, from the performance of speculum, adds that the absorptivity in the detector cavity has improved twice, the also corresponding twice that improved of quantum efficiency behind the upper reflector.
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| CNB02150783XA CN1169229C (en) | 2002-11-28 | 2002-11-28 | Resonator-enhanced n-type gallium arsenide mirror for far-infrared detectors |
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| CN1412860A CN1412860A (en) | 2003-04-23 |
| CN1169229C true CN1169229C (en) | 2004-09-29 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8997161B2 (en) | 2008-01-02 | 2015-03-31 | Sonic Ip, Inc. | Application enhancement tracks |
| US9094737B2 (en) | 2013-05-30 | 2015-07-28 | Sonic Ip, Inc. | Network video streaming with trick play based on separate trick play files |
| US9201922B2 (en) | 2009-01-07 | 2015-12-01 | Sonic Ip, Inc. | Singular, collective and automated creation of a media guide for online content |
| US9210481B2 (en) | 2011-01-05 | 2015-12-08 | Sonic Ip, Inc. | Systems and methods for performing smooth visual search of media encoded for adaptive bitrate streaming via hypertext transfer protocol using trick play streams |
| US9247317B2 (en) | 2013-05-30 | 2016-01-26 | Sonic Ip, Inc. | Content streaming with client device trick play index |
| US11849112B2 (en) | 2013-03-15 | 2023-12-19 | Divx, Llc | Systems, methods, and media for distributed transcoding video data |
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| CN100456503C (en) * | 2006-11-02 | 2009-01-28 | 上海交通大学 | Semiconductor pixelless far-infrared up-conversion imaging device manufacturing method |
| US20090078316A1 (en) * | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
| CN102148287A (en) * | 2011-01-11 | 2011-08-10 | 上海交通大学 | Preparation method for resonant cavity of far infrared detector |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8997161B2 (en) | 2008-01-02 | 2015-03-31 | Sonic Ip, Inc. | Application enhancement tracks |
| US9201922B2 (en) | 2009-01-07 | 2015-12-01 | Sonic Ip, Inc. | Singular, collective and automated creation of a media guide for online content |
| US9210481B2 (en) | 2011-01-05 | 2015-12-08 | Sonic Ip, Inc. | Systems and methods for performing smooth visual search of media encoded for adaptive bitrate streaming via hypertext transfer protocol using trick play streams |
| US11849112B2 (en) | 2013-03-15 | 2023-12-19 | Divx, Llc | Systems, methods, and media for distributed transcoding video data |
| US9094737B2 (en) | 2013-05-30 | 2015-07-28 | Sonic Ip, Inc. | Network video streaming with trick play based on separate trick play files |
| US9247317B2 (en) | 2013-05-30 | 2016-01-26 | Sonic Ip, Inc. | Content streaming with client device trick play index |
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| CN1412860A (en) | 2003-04-23 |
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