CN116828876A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN116828876A CN116828876A CN202310942773.0A CN202310942773A CN116828876A CN 116828876 A CN116828876 A CN 116828876A CN 202310942773 A CN202310942773 A CN 202310942773A CN 116828876 A CN116828876 A CN 116828876A
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- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 200
- 229910052751 metal Inorganic materials 0.000 claims abstract description 142
- 239000002184 metal Substances 0.000 claims abstract description 142
- 239000000463 material Substances 0.000 claims abstract description 94
- 239000011241 protective layer Substances 0.000 claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 claims abstract description 77
- 238000000034 method Methods 0.000 claims abstract description 63
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000005530 etching Methods 0.000 claims abstract description 28
- 238000001312 dry etching Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000002096 quantum dot Substances 0.000 claims description 7
- 238000013086 organic photovoltaic Methods 0.000 claims description 6
- 238000007641 inkjet printing Methods 0.000 claims description 5
- 229910021645 metal ion Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
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- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
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- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000000059 patterning Methods 0.000 abstract description 7
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention discloses a preparation method of a solar cell and the solar cell. The preparation method of the solar cell comprises the following steps: manufacturing a transparent front electrode layer on the surface of a transparent substrate; manufacturing a photovoltaic material layer on the surfaces of the transparent substrate and the transparent front electrode layer; manufacturing a first metal electrode on the photovoltaic material layer; manufacturing an inorganic protective layer on the surface of the first metal electrode; manufacturing a photoresist protective layer on the surface of the inorganic protective layer; etching the transparent substrate with the photoresist protective layer to remove the inorganic protective layer and the photovoltaic material layer which are not covered by the photoresist protective layer; in the above preparation method, since the inorganic protective layer is formed to cover and effectively protect the photovoltaic material layer after the first metal electrode is formed, even if the substrate is exposed to air or the patterning is performed by performing subsequent yellow light and etching processes on the substrate, the performance of the solar cell is not degraded or disabled.
Description
Technical Field
The invention relates to the technical field of solar cell products, in particular to a preparation method of a solar cell and the solar cell.
Background
In the field of solar cells, the recently emerging perovskite solar cell and organic solar cell technologies are two types of solar cell products that are considered to be the most promising. The reason is that the perovskite solar cell or the organic solar cell uses various organic materials, is easy to synthesize, has lower manufacturing cost than inorganic photovoltaic materials, is easy to modulate the light absorption range by modification, and can be manufactured into a flexible solar cell device. However, in order to apply the patterning device to intelligent electronic products, patterning of the photovoltaic layer must be realized through a process, so that the patterning device has an opportunity to be widely applied. At present, most of photovoltaic layers of the two types of solar cell products are manufactured by adopting a solution method, and the method is simple in film formation, but cannot realize patterning, so that great limitation is brought to the development of industry. In addition, since the organic material used in the perovskite solar cell or the organic solar cell or the solar cell added with the quantum dot material is very sensitive to water and oxygen, the photovoltaic material layer is very easily affected by water, oxygen and chemical liquid in the photolithography process, so that the performance is drastically reduced or even completely disabled.
Disclosure of Invention
In order to overcome the above-mentioned drawbacks and disadvantages of the prior art, the present invention is directed to a method for manufacturing a solar cell and a solar cell, which can effectively avoid the problem that water, oxygen and chemical liquid medicine in the etching process affect the performance of a photovoltaic material layer in the patterning process while patterning the photovoltaic layer by using a photolithography method.
The aim of the invention is achieved by the following technical scheme:
one embodiment of the invention provides a method for preparing a solar cell, which comprises the following steps:
manufacturing a transparent front electrode layer on the surface of a transparent substrate;
manufacturing a photovoltaic material layer on the surfaces of the transparent substrate and the transparent front electrode layer;
manufacturing a first metal electrode on the photovoltaic material layer;
manufacturing an inorganic protective layer on the surface of the first metal electrode;
manufacturing a photoresist protective layer on the surface of the inorganic protective layer;
etching the transparent substrate with the photoresist protection layer to remove the inorganic protection layer and the photovoltaic material layer which are not covered by the photoresist protection layer;
removing the photoresist protective layer; and manufacturing a second metal electrode on the surface of the dry-etched inorganic protective layer.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
before the photovoltaic material layer is manufactured, an auxiliary metal electrode is manufactured on the surface of the transparent front electrode layer; and manufacturing a first TCO protective layer on the surface of the auxiliary metal electrode.
In one embodiment, the auxiliary metal electrode is disposed at an outer edge region of the transparent front electrode layer.
In one embodiment, the auxiliary metal electrode layer is made of any one of aluminum, molybdenum, titanium, chromium, platinum, silver, a target, copper or an alloy thereof.
In one embodiment, the pattern shape of the first TCO protection layer is the same as the pattern shape of the auxiliary metal electrode, and the pattern size of the first TCO protection layer is equal to or greater than the pattern size of the auxiliary metal electrode.
In one embodiment, the difference between the line width of the first TCO protection layer at any position and the line width of the auxiliary metal electrode at the same position is between 5 μm and 10 μm.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
before the transparent front electrode layer is manufactured, an auxiliary metal electrode is manufactured on the transparent substrate; and manufacturing the transparent front electrode layer on the surface of the auxiliary metal electrode.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
before the inorganic protective layer is manufactured, a second TCO protective layer is manufactured on the surface of the first metal electrode;
and then, manufacturing an inorganic protective layer on the surfaces of the first metal electrode and the second TCO protective layer.
In one embodiment, the method for manufacturing the first metal electrode includes the following steps:
providing a conductive material comprising an organic polymeric material or an organic complex to which inorganic metal ions are added;
the conductive material is fabricated on the photovoltaic material layer in an inkjet printing manner to form the first metal electrode.
In one embodiment, the inorganic protective layer is made of a material including one or more of silicon oxide, silicon nitride, or silicon oxynitride.
In one embodiment, the inorganic protective layer has a thickness in the range of 100nm to 300 nm.
In one embodiment, during the process of manufacturing the photoresist protection layer, one end of the photoresist protection layer, which is close to the negative electrode lead-out terminal, is in a strip hollow shape or a via hole shape, and is used for exposing the inorganic protection layer;
in the etching process, the inorganic protective layer and the photovoltaic material layer in the strip-shaped hollowed-out area or the via hole area are removed, so that the second metal electrode is electrically connected with the first metal electrode and the negative electrode lead-out terminal through the strip-shaped hollowed-out area or the via hole area when the second metal electrode is manufactured later.
In one embodiment, the photovoltaic material layer is made of an organic photovoltaic material, a perovskite photovoltaic material or a photovoltaic material containing nano quantum dots.
Another embodiment of the present invention provides a solar cell including:
a transparent substrate;
a transparent front electrode layer arranged on the surface of the transparent substrate;
the photovoltaic material layer is arranged on the surfaces of the transparent substrate and the transparent front electrode layer;
the first metal electrode is arranged on the surface of the photovoltaic material layer;
an inorganic protective layer disposed on the surface of the first metal electrode; and
and the second metal electrode is arranged on the surface of the inorganic protective layer.
In one embodiment, the solar cell is an organic solar cell, or a perovskite solar cell, or a quantum dot solar cell.
Compared with the prior art, the invention has the following advantages and beneficial effects:
in the existing perovskite solar cell or organic solar cell, the organic photovoltaic material or perovskite material used by the perovskite solar cell or organic solar cell is very easy to be influenced by water, oxygen and chemical liquid in a photoetching process, so that the performance is greatly reduced and even completely fails. In the method for manufacturing the solar cell provided by the embodiment of the invention, after the first metal electrode is manufactured, the inorganic protective layer is manufactured, the photovoltaic material layer is covered on the whole surface, and the effect of effectively protecting the photovoltaic layer material can be achieved. Therefore, even if the substrate is exposed to air or a subsequent etching process is performed on the substrate, chemical liquid in the etching process, water, oxygen and the like do not affect the photovoltaic material layer, thereby avoiding performance degradation or failure of the manufactured solar cell.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a multi-junction solar cell according to an embodiment of the present invention;
FIG. 2 is a schematic top view of the transparent front electrode layer of FIG. 1;
FIG. 3 is a schematic top view of the auxiliary metal electrode of FIG. 1;
FIG. 4 is a schematic top view of the first TCO protective layer of FIG. 1;
FIG. 5 is a schematic top view of the photovoltaic material layer of FIG. 1;
FIG. 6 is a schematic top view of the first metal electrode of FIG. 1;
FIG. 7 is a schematic top view of the second TCO protective layer of FIG. 1;
FIG. 8 is a schematic top view of the inorganic protective layer of FIG. 1;
FIG. 9 is a schematic top view of the photoresist protection layer of FIG. 1;
FIG. 10 is a schematic diagram of the pattern of the photovoltaic material layer of FIG. 9 after etching;
FIG. 11 is an enlarged view of a portion of area A of FIG. 10;
FIG. 12 is a schematic top view of the second metal electrode of FIG. 1;
FIG. 13 is a schematic top view of a single junction solar cell for fabricating a transparent front electrode layer;
FIG. 14 is a schematic top view of a fabrication assist metal electrode of a single junction solar cell;
FIG. 15 is a schematic top view of a single junction solar cell making a first TCO protective layer;
FIG. 16 is a schematic top view of a photovoltaic material layer fabricated of a single junction solar cell;
FIG. 17 is a schematic top view of a single junction solar cell for fabricating a first metal electrode;
FIG. 18 is a schematic top view of a single junction solar cell fabrication of a second TCO protective layer;
FIG. 19 is a schematic top view of a single junction solar cell for fabricating an inorganic protective layer;
FIG. 20 is a schematic top view of a single junction solar cell for fabricating a photoresist protection layer;
fig. 21 is a schematic top view of a fabrication of a second metal electrode of a single junction solar cell.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Referring to fig. 1, one embodiment of the present invention provides a method for manufacturing a solar cell. The preparation method of the solar cell comprises the following steps:
one embodiment of the invention provides a method for preparing a solar cell, which comprises the following steps:
manufacturing a transparent front electrode layer on the surface of a transparent substrate;
manufacturing a photovoltaic material layer on the surfaces of the transparent substrate and the transparent front electrode layer;
manufacturing a first metal electrode on the photovoltaic material layer;
manufacturing an inorganic protective layer on the surface of the first metal electrode;
manufacturing a photoresist protective layer on the surface of the inorganic protective layer;
etching the transparent substrate with the photoresist protection layer to remove the inorganic protection layer and the photovoltaic material layer which are not covered by the photoresist protection layer;
removing the photoresist protective layer; and
and manufacturing a second metal electrode on the surface of the dry-etched inorganic protective layer.
In the existing perovskite solar cell or organic solar cell, the organic photovoltaic material or perovskite material used by the perovskite solar cell or organic solar cell is very easy to be influenced by water, oxygen and chemical liquid in a photoetching process, so that the performance is greatly reduced and even completely fails. In the preparation method of the solar cell, after the first metal electrode is manufactured, the inorganic protective layer is manufactured to cover the whole surface of the photovoltaic material layer, and the effect of effectively protecting the photovoltaic material layer can be achieved. Therefore, even if the substrate is exposed to air or the substrate is subjected to a subsequent etching process, chemical liquid in the etching process, water, oxygen and the like do not affect the photovoltaic material layer, so that performance degradation or failure of the manufactured solar cell is avoided.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
before the photovoltaic material layer is manufactured, an auxiliary metal electrode is manufactured on the surface of the transparent front electrode layer; and
and manufacturing a first TCO protective layer on the surface of the auxiliary metal electrode.
In one embodiment, the pattern shape of the first TCO protection layer is the same as the pattern shape of the auxiliary metal electrode, and the pattern size of the first TCO protection layer is equal to or greater than the pattern size of the auxiliary metal electrode.
The preparation process of the first TCO protective layer may also be omitted as needed. At this time, the preparation method of the solar cell includes the following steps:
before the transparent front electrode layer is manufactured, an auxiliary metal electrode is manufactured on the transparent substrate; and manufacturing the transparent front electrode layer on the surface of the auxiliary metal electrode.
Specifically, in this embodiment, the auxiliary metal electrode of the transparent front electrode is first fabricated (metal plating→yellow light fabrication pattern→etching the auxiliary electrode pattern), and then the transparent front electrode is fabricated (transparent front electrode plating→yellow light fabrication pattern→etching the transparent front electrode pattern). Since the transparent front electrode layer already performs coverage protection on the auxiliary metal electrode, the first TCO protection layer is not needed to perform coverage protection treatment on the auxiliary metal electrode later. At this time, the process of fabricating the first TCO protection layer may be omitted. It will be appreciated that in order to make the protective effect of the transparent front electrode layer better, the pattern of the transparent front electrode needs to completely cover the auxiliary metal electrode. The transparent front electrode layer is at least 3 μm larger than the external dimension of the auxiliary metal electrode as required. Preferably, the external expansion size of the transparent front electrode layer is 5-20 μm.
In one embodiment, the difference between the line width of the first TCO protection layer at any position and the line width of the auxiliary metal electrode at the same position is between 5 μm and 10 μm.
In one embodiment, the auxiliary metal electrode is disposed at an outer edge region of the transparent front electrode layer.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
before the inorganic protective layer is manufactured, a second TCO protective layer is manufactured on the surface of the first metal electrode;
and then, manufacturing an inorganic protective layer on the surfaces of the first metal electrode and the second TCO protective layer.
The method for manufacturing the solar cell according to the present invention will be described below by taking a solar cell having a multi-junction tandem structure as an example.
Referring to fig. 2, the steps for fabricating a transparent front electrode layer on the surface of a transparent substrate are as follows: a transparent front electrode layer 120 is formed on the surface of a transparent substrate 110 by PVD (Physical Vapor Deposition ) or CVD (Chemical Vapor Deposition, chemical vapor deposition). In this embodiment, the transparent front electrode layer 120 further includes a negative electrode lead-out terminal 121.
Referring to fig. 3, the step of manufacturing an auxiliary metal electrode on the surface of the transparent front electrode layer specifically includes: in order to reduce the resistance of the transparent front electrode layer 120 and improve the transport efficiency of carriers output from one side of the transparent front electrode layer 120, an auxiliary metal electrode 130 is formed on the surface of the transparent front electrode layer 120. The auxiliary metal electrode 130 is disposed in a non-operating region of the solar cell. In this embodiment, the auxiliary metal electrode 130 is disposed around the transparent front electrode layer 120, so as not to affect the transmittance of the effective light absorption area of the solar cell. The auxiliary metal electrode 130 may be made of a common low-resistivity metal such as aluminum, molybdenum, titanium, chromium, platinum, silver, target, copper, or an alloy thereof.
Referring to fig. 4, the steps of fabricating a first TCO protection layer on the surface of the auxiliary metal electrode are as follows: to reduce the over-etching of the auxiliary metal electrode 130 that occurs during the post chemical dry etching process, a TCO protection layer (i.e., the first TCO protection layer 140) is further formed on the surface. The pattern shape of the first TCO protection layer 140 is the same as the pattern shape of the auxiliary metal electrode 130, but the size is equal to or slightly larger than the pattern size of the auxiliary metal electrode 130 by 5 μm-10 μm, so that the auxiliary metal electrode 130 can be effectively protected from dry etching even if the pattern is deviated in the photolithography process.
It is understood that the auxiliary metal electrode 130 is not limited to the above fabrication method. In another embodiment, the auxiliary metal electrode 130 may be fabricated on the surface of the transparent substrate 110, and then the transparent front electrode layer 120 may be fabricated on the surface of the auxiliary metal electrode 130. At this time, since the transparent front electrode layer 120 can effectively cover the auxiliary metal electrode 130, the first TCO protection layer 140 is not required to be fabricated to etch and protect the auxiliary metal electrode 130.
Referring to fig. 5, the steps of fabricating a photovoltaic material layer on the surfaces of the transparent substrate and the transparent front electrode layer specifically include: the photovoltaic material layer 150 is formed on the surface of the transparent substrate 110 in sequence entirely or locally, and the photovoltaic material layer 150 is cured to form a film, and a pattern corresponding to the transparent front electrode layer 120 is formed. In this embodiment, the photovoltaic material layer 150 is made of a photovoltaic material such as OPV (Organic Photovoltaics, organic photovoltaic) or PSC (Perovskite Solar Cells, perovskite solar cell).
Referring to fig. 6, the steps for fabricating the first metal electrode on the photovoltaic material layer are specifically: the fabrication of the first metal electrode 160 is completed using an evaporation process and by means of a MASK. In general, the first metal electrode 160 is also referred to as a back electrode. The first metal electrode 160 is made of common metals such as aluminum, silver, gold, platinum, magnesium, etc., which are easy to be manufactured by vapor deposition process, and has a thickness of more than 100nm.
Referring to fig. 7, the step of fabricating a second TCO protection layer on the surface of the first metal electrode specifically includes: to reduce the over-etching of the first metal electrode 160 (i.e., the back electrode) that occurs during the post chemical dry etching process, a second TCO protective layer 170 is also formed on the surface. The pattern shape of the second TCO protective layer 170 is similar to the pattern of the first metal electrode 160 exposed in the dry etching process, but the size of the pattern is slightly larger than 10 μm-20 μm of the pattern of the first metal electrode 160, so that the first metal electrode 160 can be effectively protected from being dry etched even if the metal electrode or the protective photoresist layer is deviated in the evaporation or photolithography process. The second TCO protective layer 170 is greater than 10nm thick as desired. It will be appreciated that when the first metal electrode 160 is made of a metal material that is insensitive to chemical dry etching processes (very low etching rates), the surface of the first metal electrode 160 does not require the fabrication of the second TCO protective layer 170.
The fabrication of the first metal electrode is not limited to the above manner as needed. In another embodiment, the method for manufacturing the first metal electrode includes the following steps:
providing a conductive material comprising an organic polymeric material or an organic complex to which inorganic metal ions are added;
the conductive material is fabricated on the photovoltaic material layer in an inkjet printing manner to form the first metal electrode.
Specifically, the first metal electrode 160 is patterned on the photovoltaic material layer 150 by Inkjet printing (Inkjet) using a conductive material such as an organic polymer material having high conductivity or an organic complex to which inorganic metal ions are added. The thickness of the high conductivity organic polymer or complex is greater than 100nm. In this embodiment, by using a conductive material such as an organic polymer material with high conductivity or an organic complex added with inorganic metal ions, the conductive material can be effectively formed on the surface of the photovoltaic material by means of inkjet printing, so that the manufacture of the first metal electrode becomes more convenient and faster.
Referring to fig. 8, the steps of forming an inorganic protective layer on the surfaces of the first metal electrode and the first TCO protective layer include: an inorganic protective layer 180 is formed on the surfaces of the first metal electrode 160 and the second TCO protective layer 170 by CVD. The inorganic protective layer 180 is formed to cover the entire surface of the large transparent substrate 110 and completely covers the photovoltaic material layer 150. In this embodiment, the inorganic protective layer 160 is made of one or more materials selected from silicon oxide, silicon nitride and silicon oxynitride. The thickness of the inorganic protective layer 160 ranges from 100nm to 300 nm. In this embodiment, the inorganic protective layer 180 made of silicon oxide, silicon nitride or silicon oxynitride material is used to effectively protect the photovoltaic material layer 150 during the etching process, so as to avoid the influence of chemical liquid and water during the etching process on the photovoltaic material layer 150. The inorganic protective layer 160 has a thickness of greater than 50nm, as desired. In the present embodiment, the thickness of the inorganic protective layer 160 is set to be in the range of 100nm to 300 nm.
Referring to fig. 9, the step of forming a photoresist protection layer on the surface of the inorganic protection layer includes: a photoresist material is coated on the surface of the inorganic protective layer 180, and a photoresist protective layer 190 is formed by photolithography. The photoresist material may be a positive material or a negative material. The thickness of the photoresist protective layer 190 is 1 μm to 5 μm as needed.
After the photoresist protection layer 190 is completed, the transparent substrate 110 having the photoresist protection layer 190 is etched to remove the inorganic protection layer and the photovoltaic material layer not covered by the photoresist protection layer 190. Specifically, after the photoresist protection layer 190 is formed, the transparent substrate 110 having the photoresist protection layer 190 is put into a chemical dry etching apparatus to perform full-face etching. After the dry etching is completed, all the film covering the region of the photoresist protection layer 190 remains. In addition, the film layer covering the area not covered by the photoresist protection layer 190, but covered by the metal or the TCO protection layer, is also completely preserved. The inorganic protective layer 180 and the photovoltaic material layer 150 in other areas are removed by the etching process.
In a specific embodiment, during the process of manufacturing the photoresist protection layer 190, the photoresist protection layer 190 has a strip hollow shape or a via hole shape at one end near the negative electrode lead-out terminal 121, so as to expose the inorganic protection layer 180;
in the etching process, the inorganic protection layer 180 and the photovoltaic material layer 150 in the strip-shaped hollow area or the via area are removed, so that the second metal electrode 1100 electrically connects the first metal electrode (negative electrode) with the negative electrode lead-out terminal through the strip-shaped hollow area or the via area when the second metal electrode 1100 is manufactured later.
In this embodiment, the pattern design of the photoresist protection layer in the negative electrode area of the final solar cell is different from that of the negative electrode extraction terminal, and the inorganic protection layer 180 in the area is partially exposed by a strip-shaped hollowed-out pattern or a via pattern, and the negative electrode of the final solar cell is electrically connected with the negative electrode extraction terminal by vapor deposition of the second metal electrode 1100 after dry etching. Before dry etching, the surface of the negative electrode leading-out terminal is covered with a PV film layer, and the PV film layer at the position is removed by dry etching and ashing processes to expose the electrode surface of the negative electrode leading-out terminal.
After the inorganic protective layer 180 and the photovoltaic material layer 150 in other areas are removed by the etching process, the photoresist protective layer 190 is removed. Specifically, the transparent substrate 110 subjected to chemical dry etching is subjected to oxygen plasma ashing treatment to remove the photoresist material remaining after dry etching. This process only removes the organic-based photoresist material, but does not etch the inorganic protective layer 160, the metal or the TCO layer-covered film. After the photoresist protection layer 190 is removed, the area covered by this layer 190 remains as a surface of the inorganic protection layer 180 that is not etched.
Referring to fig. 10, after etching is completed, the pattern of the photovoltaic material layer 150 is shown in fig. 10. At this point, the areas not covered by the photoresist layer 190 will be etched away, leaving only the photovoltaic material layer 150 corresponding to the pattern of the photoresist layer 190. Referring to fig. 11, at this time, since the pattern of the photoresist protection layer 190 at the negative electrode lead-out terminal is a strip-shaped hollowed-out pattern or a via pattern, the photovoltaic material layer 150 also has a corresponding hollowed-out area 151. When the second metal electrode is manufactured later, the second metal electrode can be connected with the negative electrode lead-out terminal through the corresponding hollowed-out area 151.
Referring to fig. 12, the steps for fabricating the second metal electrode on the surface of the inorganic protective layer specifically include: after the photoresist protection layer 190 is removed, a second metal electrode 1100 is fabricated by using a MASK through evaporation. The second metal electrode 1100 electrically connects the positive electrodes and the negative electrodes of the adjacent multiple solar cells, and connects the negative electrodes and the lead-out terminals of the negative electrodes. It can be understood that, when the device structure of the solar cell is a single-segment structure, only the negative electrode needs to be electrically connected with the lead-out terminal of the negative electrode.
The above embodiment is an illustration of the method for manufacturing a solar cell provided by the present invention, taking a multi-junction tandem structure as an example. It can be appreciated that the method for manufacturing a solar cell provided by the invention can also be used in the manufacturing process of a single device.
When the solar cell is a single-segment device, the preparation method of the solar cell comprises the following steps:
referring to fig. 13, a transparent front electrode layer 220 is formed on the surface of a transparent substrate 210. In this embodiment, the transparent front electrode layer 220 further includes a negative electrode lead-out terminal 221.
Referring to fig. 14, an auxiliary metal electrode 230 is formed on the surface of the transparent front electrode layer 220.
Referring to fig. 15, a first TCO protection layer 240 is formed on the surface of the auxiliary metal electrode 230.
Referring to fig. 16, a photovoltaic material layer 250 is formed on the surfaces of the transparent substrate 210 and the transparent front electrode layer 220.
Referring to fig. 17, a first metal electrode 260 is formed on the photovoltaic material layer 250.
Referring to fig. 18, a second TCO protection layer 270 is formed on the surface of the first metal electrode 260.
Referring to fig. 19, an inorganic protective layer 280 is formed on the surface of the first metal electrode 260 and the second TCO protective layer 270.
Referring to fig. 20, a photoresist protection layer 290 is formed on the surface of the inorganic protection layer 280.
The transparent substrate 210 having the photoresist protection layer 290 is etched to remove the inorganic protection layer 280 and the photovoltaic material layer 250 not covered by the photoresist protection layer 290.
After removing the inorganic protective layer 280 and the photovoltaic material layer 250 that are not covered by the photoresist protective layer 290, the photoresist protective layer 270 is removed.
Referring to fig. 21, after the photoresist protection layer 270 is removed, a second metal electrode 2100 is formed on the surface of the inorganic protection layer 280. In this embodiment, since the device structure of the solar cell is a single-segment structure, only the negative electrode needs to be electrically connected to the lead-out terminal of the negative electrode.
In this embodiment, the materials and manufacturing methods of the transparent substrate 210, the transparent front electrode layer 220, the auxiliary metal electrode 230, the first TCO protection layer 240, the photovoltaic material layer 250, the first metal electrode 260, the second TCO protection layer 270, the inorganic protection layer 280, the photoresist protection layer 290 and the second metal electrode 2100 are the same as or similar to those of the previous embodiments, and will not be repeated here.
Another embodiment of the present invention provides a solar cell including:
a transparent substrate;
a transparent front electrode layer arranged on the surface of the transparent substrate;
the photovoltaic material layer is arranged on the surfaces of the transparent substrate and the transparent front electrode layer;
the first metal electrode is arranged on the surface of the photovoltaic material layer;
an inorganic protective layer disposed on the surface of the first metal electrode; and
and the second metal electrode is arranged on the surface of the inorganic protective layer.
In the above solar cell, since an inorganic protective layer is provided on the surface of the first metal electrode, the inorganic protective layer may cover the photovoltaic material layer. Therefore, even if the substrate is exposed to air or etched during the manufacturing process, chemical liquid, water, etc. in the etching process do not affect the photovoltaic material layer, thereby avoiding degradation of the solar cell.
The solar cell may further include an auxiliary metal electrode as needed. The auxiliary metal electrode is arranged between the transparent front electrode layer and the photovoltaic material layer and is positioned in the outer edge area of the transparent front electrode layer. The auxiliary metal electrode can reduce the resistance of the transparent front electrode layer and improve the transmission efficiency of carriers output from one side of the transparent front electrode layer.
The solar cell may further include a first TCO protective layer, as desired. The first TCO protection layer is arranged between the auxiliary metal electrode and the photovoltaic material layer and is used for reducing the over-etching condition of the auxiliary metal electrode in the later chemical dry etching process. The pattern shape of the first TCO protection layer is the same as that of the auxiliary metal electrode, but the size of the first TCO protection layer is 5 mu m-10 mu m which is equal to or slightly larger than that of the auxiliary metal electrode pattern, so that the auxiliary metal electrode can be effectively protected from dry etching under the condition that pattern deviation occurs in the photoetching process.
The solar cell may further include a second TCO protective layer, as desired. The second TCO protective layer is arranged between the first metal electrode and the inorganic protective layer and is used for reducing the over-etching condition of the first metal electrode in the later chemical dry etching process.
The solar cell is an organic solar cell, or a perovskite solar cell, or a quantum dot solar cell, as desired. Specifically, the quantum dot solar cell is a solar cell manufactured by adopting a nano quantum dot photovoltaic material.
The embodiments described above are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the embodiments described above, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principles of the present invention should be made in the equivalent manner, and are included in the scope of the present invention.
Claims (15)
1. A method of manufacturing a solar cell, comprising the steps of:
manufacturing a transparent front electrode layer on the surface of a transparent substrate;
manufacturing a photovoltaic material layer on the surfaces of the transparent substrate and the transparent front electrode layer;
manufacturing a first metal electrode on the photovoltaic material layer;
manufacturing an inorganic protective layer on the surface of the first metal electrode;
manufacturing a photoresist protective layer on the surface of the inorganic protective layer;
etching the transparent substrate with the photoresist protection layer to remove the inorganic protection layer and the photovoltaic material layer which are not covered by the photoresist protection layer;
removing the photoresist protective layer;
and manufacturing a second metal electrode on the surface of the dry-etched inorganic protective layer.
2. The method of manufacturing a solar cell according to claim 1, further comprising the steps of:
before the photovoltaic material layer is manufactured, an auxiliary metal electrode is manufactured on the surface of the transparent front electrode layer; and
and manufacturing a first TCO protective layer on the surface of the auxiliary metal electrode.
3. The method of manufacturing a solar cell according to claim 1, further comprising the steps of:
before the transparent front electrode layer is manufactured, an auxiliary metal electrode is manufactured on the transparent substrate; and
and manufacturing the transparent front electrode layer on the surface of the auxiliary metal electrode.
4. The method of manufacturing a solar cell according to claim 2, wherein the auxiliary metal electrode is disposed at an edge region of the transparent front electrode layer.
5. The method for manufacturing a solar cell according to claim 2, wherein the material for manufacturing the auxiliary metal electrode layer comprises any one of aluminum, molybdenum, titanium, chromium, platinum, silver, palladium, copper, or an alloy thereof.
6. The method for manufacturing a solar cell according to claim 2, wherein,
the pattern shape of the first TCO protection layer is the same as that of the auxiliary metal electrode, and the pattern size of the first TCO protection layer is equal to or larger than that of the auxiliary metal electrode.
7. The method of manufacturing a solar cell according to claim 6, wherein the difference between the line width of the second TCO protective layer at any position and the line width of the auxiliary metal electrode at the same position is between 5 μm and 10 μm.
8. The method for manufacturing a solar cell according to claim 1, wherein the method for manufacturing the first metal electrode comprises the steps of:
providing a conductive material comprising an organic polymeric material or an organic complex to which inorganic metal ions are added;
the conductive material is fabricated on the photovoltaic material layer in an inkjet printing manner to form the first metal electrode.
9. The method of manufacturing a solar cell according to claim 1, further comprising the steps of:
before the inorganic protective layer is manufactured, a second TCO protective layer is manufactured on the surface of the first metal electrode;
and then, manufacturing an inorganic protective layer on the surfaces of the first metal electrode and the second TCO protective layer.
10. The method of claim 1, wherein the inorganic protective layer is made of one or more of silicon oxide, silicon nitride and silicon oxynitride.
11. The method of claim 10, wherein the inorganic protective layer has a thickness in a range of 100nm to 300 nm.
12. The method for manufacturing a solar cell according to claim 1, wherein,
in the process of manufacturing the photoresist protection layer, one end of the photoresist protection layer, which is close to the negative electrode lead-out terminal, is in a strip hollow shape or a via hole shape and is used for exposing the inorganic protection layer;
and in the etching process, the inorganic protective layer and the photovoltaic material layer in the strip-shaped hollowed-out area or the through hole area are removed, and after dry etching, the negative electrode of the last battery is electrically connected with the negative electrode leading-out terminal through evaporation of the second metal electrode.
13. The method for manufacturing a solar cell according to any one of claims 1 to 12, wherein the photovoltaic material layer is made of an organic photovoltaic material, a perovskite photovoltaic material, or a photovoltaic material containing nano quantum dots.
14. A solar cell, comprising:
a transparent substrate;
a transparent front electrode layer arranged on the surface of the transparent substrate;
the photovoltaic material layer is arranged on the surfaces of the transparent substrate and the transparent front electrode layer;
the first metal electrode is arranged on the surface of the photovoltaic material layer;
an inorganic protective layer disposed on the surface of the first metal electrode; and
and the second metal electrode is arranged on the surface of the inorganic protective layer.
15. The solar cell according to claim 1, wherein the solar cell is an organic solar cell, or a perovskite solar cell, or a quantum dot solar cell.
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| CN202310942773.0A CN116828876A (en) | 2023-07-27 | 2023-07-27 | Solar cell and preparation method thereof |
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