CN116814081B - Interface material with ultrahigh heat conduction and low dielectric property and preparation method thereof - Google Patents
Interface material with ultrahigh heat conduction and low dielectric property and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052582 BN Inorganic materials 0.000 claims abstract description 53
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000010432 diamond Substances 0.000 claims abstract description 39
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 39
- 239000000843 powder Substances 0.000 claims abstract description 25
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229920002545 silicone oil Polymers 0.000 claims abstract description 19
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003054 catalyst Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 10
- 238000003490 calendering Methods 0.000 claims abstract description 8
- 239000002994 raw material Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000741 silica gel Substances 0.000 claims description 38
- 229910002027 silica gel Inorganic materials 0.000 claims description 38
- 238000004898 kneading Methods 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 20
- 239000002245 particle Substances 0.000 claims description 19
- 238000003756 stirring Methods 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 9
- 229920002554 vinyl polymer Polymers 0.000 claims description 9
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 12
- 229920001558 organosilicon polymer Polymers 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008054 signal transmission Effects 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000006555 catalytic reaction Methods 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 17
- 238000012360 testing method Methods 0.000 description 7
- 230000002349 favourable effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 239000000806 elastomer Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 239000004636 vulcanized rubber Substances 0.000 description 1
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- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
- B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
- B29C39/021—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles by casting in several steps
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- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
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- C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2383/04—Polysiloxanes
- C08J2383/07—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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Abstract
The application relates to the technical field of heat-conducting interface materials, in particular to an interface material with ultrahigh heat conduction and low dielectric property and a preparation method thereof, wherein the interface material comprises the following raw materials in parts by weight: the organic silicon polymer and the oxygen-containing silicone oil are crosslinked under the catalysis of the platinum catalyst to form a reticular organic silicon elastic matrix, the strength of the matrix is increased by adding the reinforcing powder, the cubic boron nitride and the diamond are compounded, the thickness of the organic silicon elastic matrix is paved layer by layer, the cubic boron nitride and the diamond are tightly arranged through calendaring, and the ultra-high heat conduction low dielectric interface material with the heat conductivity coefficient larger than 7 and the dielectric constant smaller than 5 can be prepared, so that the heat conduction effect is good, and the influence on signal transmission and receiving of a heating device is small.
Description
Technical Field
The application relates to the technical field of heat-conducting interface materials, in particular to an interface material with ultrahigh heat conduction and low dielectric property and a preparation method thereof.
Background
Along with the miniaturization and the continuous improvement of the performance of electronic products, electronic components of the electronic products are more and more dense, and the transmission and collection, shielding and enhancement of signals are also important. Therefore, the thermally conductive material used as the interface is required to have high thermal conductivity while having a low dielectric constant.
The heat conductivity coefficient of the interface heat conduction material in the current market is in direct proportion to the dielectric constant, and the highest dielectric constant can reach more than 9. The product with low dielectric constant is selected, and the heat conductivity coefficient cannot meet the heat conductivity requirement of the electronic product, so that it is necessary to provide an interface material with ultrahigh heat conductivity and low dielectric constant and a preparation method thereof.
Disclosure of Invention
In order to solve the problems that the heat conductivity coefficient of the interface heat conduction material in the current market is in direct proportion to the dielectric constant and the dielectric constant of the interface material with high heat conductivity coefficient is also higher, the application provides an interface material with ultrahigh heat conductivity and low dielectric property and a preparation method thereof.
In a first aspect, the present application provides an interface material with ultrahigh thermal conductivity and low dielectric property, which adopts the following technical scheme: an interface material with ultrahigh heat conduction and low dielectric property comprises the following raw materials in parts by weight: 10-15 parts of organosilicon polymer, 3-7 parts of oxygen-containing silicone oil, 50-60 parts of cubic boron nitride, 50-90 parts of diamond, 27-36 parts of reinforcing powder, 0.1-0.3 part of platinum catalyst and 0.2-0.4 part of silane coupling agent.
By adopting the technical scheme, the diamond with high heat conduction performance and low dielectric constant, which is compounded by the cubic boron nitride and has ultrahigh heat conduction performance and dielectric constant not higher than 5, can lead the heat conduction coefficient of the prepared interface material to be more than 7, lead the dielectric constant to be lower than 5, lead the cubic boron nitride to be easier to fill, lead the filling rate of the compounded diamond filled in the silica gel substrate to be 96 percent, and can effectively improve the heat conductivity of the interface material.
Preferably, the silicone polymer is vinyl silicone oil.
By adopting the technical scheme, the vinyl silicone oil is favorable for being compatible with the cubic boron nitride, the diamond and the reinforcing powder due to the self-contained viscosity, so that the cubic boron nitride and the diamond are better in compound filling quality, and further, the interface material prepared finally has viscosity, can be adhered to electronic components, and is convenient to use.
Preferably, the silicone polymer has a viscosity of 100 to 150cps.
Through the adoption of the technical scheme, through multiple experiments by the inventor, the viscosity of the organic silicon polymer is between 100 and 150cps, the filling rate of the cubic boron nitride and the diamond is better, the filling rate is lower than 90% when the viscosity is lower than 100cps, and the repeated adhesion on electronic components is not facilitated when the viscosity is higher than 150cps.
Preferably, the reinforcing powder is nano alumina powder, and the particle size of the reinforcing powder is 30-60nm.
By adopting the technical scheme, the nano alumina powder with the particle size of 30-60nm has large specific surface area, high hardness and good dimensional stability, can be better dispersed in the organic silicon polymer, improves the strength and toughness of the silica gel base material, ensures that the interface material has higher strength, is not easy to be damaged in the use process, further, the dielectric constant of the nano alumina powder is less than 5, can effectively reduce the dielectric constant of the interface material, has high surface activity and low apparent density, can be used as a lubricant for filling the cubic boron nitride and the diamond in the base material, ensures that the filling rate of the cubic boron nitride and the diamond in the base material is high, and enhances the heat conducting property of the interface material.
Preferably, the cubic boron nitride comprises cubic boron nitride with a grain size of 5-10um and cubic boron nitride with a grain size of 30-40um, and the diamond has a grain size of 100-120um.
Through adopting above-mentioned technical scheme, use cubic boron nitride and the diamond of different particle diameters to fill in the filling effect that the substrate was filled the effect and is higher than single particle diameter, big or small particle diameter closely piles up, forms better heat conduction passageway, improves the heat conduction effect of interface material.
In a second aspect, the present application provides a method for preparing an interface material with ultrahigh thermal conductivity and low dielectric property, which adopts the following technical scheme:
a preparation method of an interface material with ultrahigh heat conduction and low dielectric property comprises the following steps:
step S1: adding the organic silicon polymer, the oxygen-containing silicone oil, the platinum catalyst and the silane coupling agent into a stirrer for stirring according to parts by weight, and adding the mixture in the stirrer into a vacuum kneader for once kneading;
step S2: adding the reinforcing powder into a vacuum kneader to carry out secondary kneading with the mixed material, and then opening vacuum to carry out defoaming treatment to obtain silica gel;
step S3: putting the cubic boron nitride with the grain size of 5-10um and the cubic boron nitride with the grain size of 30-40um into a stirrer to be uniformly mixed to obtain a mixture A;
step S4: pouring the silica gel in the step S2 in a mould for the first time, then placing a layer of mixture A, pouring the silica gel, and sequentially operating;
step S5: and (3) calendaring the silica gel subjected to the demolding under a calendar to obtain the interface material with ultrahigh heat conduction and low dielectric property.
By adopting the technical scheme, the interface material with the ultrahigh heat conduction and low dielectric constant, the heat conduction coefficient of which is more than 7, and the dielectric constant of which is less than 5, can be prepared; in the step S1, the organosilicon polymer and the oxygen-containing silicone oil are crosslinked under the catalysis of a platinum catalyst to form an organosilicon elastic matrix with a reticular structure, the reinforcing powder is added into the organosilicon elastic matrix to be beneficial to increasing the strength of the matrix, and a vacuum kneader is used to ensure that the materials are uniformly mixed, the reaction is rapid, and the reinforcing powder is beneficial to being uniformly distributed in the matrix; in the step S3, cubic boron nitride and diamond with different particle sizes are mixed, so that the cubic boron nitride and the diamond are closely stacked, the filling degree of the mixture A paved on a silica gel matrix in the step S4 is high, a good heat conduction path can be formed, and the heat conduction coefficient of an interface material is increased; in the step S4, the filling quality of the cubic boron nitride and the diamond is better through multilayer arrangement; and S5, calendaring by a calendaring machine to obtain a flat interface material with ultrahigh heat conduction and low dielectric property, which is convenient to be attached to the electronic element.
Preferably, the rotating speed of the stirrer in the step S1 is 1000-3000r/min, and stirring is carried out for 30-60min; the temperature of the vacuum kneader is 60-90 ℃, and kneading is carried out for 70-90min.
By adopting the technical scheme, the organic silicon polymer, the oxygen-containing silicone oil and the platinum catalyst are uniformly mixed, so that the organic silicon elastic matrix with better performance can be fully obtained through the reaction.
Preferably, the temperature of the vacuum kneader in the step S2 is 90-120 ℃, and kneading is carried out for 65-95min; vacuum defoamation is carried out for 1-2h.
By adopting the technical scheme, the temperature of the kneader is 90-120 ℃, the compatibility of the organosilicon elastomer and the reinforcing powder is higher, the reinforcing powder can be uniformly dispersed in the organosilicon elastomer matrix by kneading, the strength of the organosilicon elastomer matrix is enhanced, and the vacuum defoaming is beneficial to compacting, smoothing and lustring the surface of the organosilicon elastomer and reducing the adverse effect of bubbles on the matrix strength.
Preferably, the rotational speed of the stirrer in the step S3 is 2000-4000r/min, and the stirring time is 15-20min.
By adopting the technical scheme, the method is favorable for uniformly mixing the cubic boron nitride with the diamond with different particle sizes, so that the filling rate is higher when the subsequent cubic boron nitride and diamond are filled into the silica gel matrix.
Preferably, at least 3 layers of mixture A are arranged in the heat-conducting silica gel sheet in the step S4, and the thickness of the heat-conducting silica gel sheet after the step S5 is rolled is 0.2-0.4mm.
Through adopting above-mentioned technical scheme, cubic boron nitride and diamond are vertical to be arranged on silica gel piece thickness, make the cubic boron nitride of each layer combine closely with the diamond after the casting, be favorable to improving the heat conduction effect of interface material, the thickness of heat conduction silica gel piece is 0.2-0.4mm and is more suitable for being used in electron primordial qi spare, saves installation space.
In summary, the present application has the following beneficial effects:
1. because the diamond with high heat conductivity and low dielectric constant and ultrahigh heat conductivity is compounded by the cubic boron nitride, the heat conductivity of the prepared interface material can be more than 7, and the dielectric constant is lower than 5.
2. In the application, vinyl silicone oil with the viscosity of 100-150cps is preferably adopted to be favorable for being compatible with cubic boron nitride, diamond and reinforcing powder, nano alumina powder with the particle size of 30-60nm is adopted to be favorable for improving the strength of a silica gel matrix, and diamond with the particle size of 100-120 mu m, cubic boron nitride with the particle size of 5-10 mu m and cubic boron nitride with the particle size of 30-40 mu m are used for compounding, so that the size particle sizes are closely piled to form a better heat conduction path, and the heat conduction effect of an interface material is improved.
3. According to the method, the cubic boron nitride and the diamond with different particle sizes are vertically distributed on the thickness of the silica gel sheet, and after the lamination, the cubic boron nitride and the diamond of each layer are tightly combined, so that the interface material with the ultrahigh heat conduction and low dielectric constant, the heat conduction coefficient of which is more than 7, and the dielectric constant of which is less than 5, can be prepared.
Detailed Description
The present application is described in further detail below in connection with examples and comparative examples.
Examples
Example 1
A preparation method of an interface material with ultrahigh heat conduction and low dielectric property comprises the following steps:
step S1: adding 1kg of vinyl silicone oil, 0.3kg of oxygen-containing silicone oil, 0.01kg of platinum catalyst and 0.02kg of silane coupling agent into a stirrer, stirring for 30min at a rotating speed of 1000r/min, adding the mixture in the stirrer into a vacuum kneader, kneading for one time, wherein the temperature of the vacuum kneader is 60 ℃, and kneading for 70min;
step S2: adding 2.7kg of nano alumina powder with the particle size of 30nm into a vacuum kneader to carry out secondary kneading with the mixed material, wherein the temperature of the vacuum kneader is 90 ℃, and kneading is carried out for 65min; opening vacuum to perform defoaming treatment, wherein the defoaming time is 1h, so as to obtain silica gel; step S3: putting the cubic boron nitride with the grain diameter of 5um, the cubic boron nitride with the grain diameter of 30um and the diamond with the grain diameter of 100um into a stirrer with the rotating speed of 2000r/min for stirring for 15min to obtain a mixture A;
step S4: pouring the silica gel in the step S2 in a mould for the first time, then placing a layer of mixture A, and then pouring the silica gel, wherein 3 layers of mixture A are arranged in the silica gel;
step S5: and (3) calendering the silica gel subjected to demolding under a calender to obtain the interface material with the thickness of 0.2mm and the ultrahigh heat conduction and low dielectric property.
Examples 2 to 5
Examples 2-5 differ from example 1 in that: the amounts, types and processes of the raw materials are different, and refer to the following table 1.
Comparative example
Comparative example 1
Comparative example 1 differs from example 1 in that: an equal amount of cubic boron nitride was replaced with an equal amount of hexagonal boron nitride.
Comparative example 2
Comparative example 2 differs from example 1 in that: 5kg of diamond was replaced with 2.5g of cubic boron nitride having a particle size of 5 to 10um and 2.5g of cubic boron nitride having a particle size of 30 to 40 um.
Comparative example 3
Comparative example 3 differs from example 1 in that: comparative example 3 no nano alumina powder was mixed into silica gel, the specific steps were: step S1: adding 1kg of vinyl silicone oil, 0.3kg of oxygen-containing silicone oil, 0.01kg of platinum catalyst and 0.02kg of silane coupling agent into a stirrer, stirring for 30min at a rotating speed of 1000r/min, adding the mixed material in the stirrer into a vacuum kneader, kneading for one time, wherein the temperature of the vacuum kneader is 60 ℃, kneading for 70min, opening vacuum for defoaming treatment, and the defoaming time is 1h to obtain silica gel;
step S2: putting the cubic boron nitride with the grain diameter of 5um, the cubic boron nitride with the grain diameter of 30um and the diamond with the grain diameter of 100um into a stirrer with the rotating speed of 2000r/min for stirring for 15min to obtain a mixture A;
step S3: pouring the silica gel in the step S1 in a mould for the first time, then placing a layer of mixture A, and then pouring the silica gel, wherein 3 layers of mixture A are arranged in the silica gel;
step S4: and (3) calendering the silica gel subjected to demolding under a calender to obtain the interface material with the thickness of 0.2mm and the ultrahigh heat conduction and low dielectric property.
Comparative example 4
Comparative example 4 differs from example 1 in that: the mixture A is directly kneaded with the silica gel obtained in the step S2 by using a vacuum kneader, and the concrete steps are as follows:
step S1: adding 1kg of vinyl silicone oil, 0.3kg of oxygen-containing silicone oil, 0.01kg of platinum catalyst and 0.02kg of silane coupling agent into a stirrer, stirring for 30min at a rotating speed of 1000r/min, adding the mixture in the stirrer into a vacuum kneader, kneading for one time, wherein the temperature of the vacuum kneader is 60 ℃, and kneading for 70min;
step S2: adding 2.7kg of nano alumina powder with the particle size of 30nm into a vacuum kneader to carry out secondary kneading with the mixed material, wherein the temperature of the vacuum kneader is 90 ℃, and kneading is carried out for 65min; opening vacuum to perform defoaming treatment, wherein the defoaming time is 1h, so as to obtain silica gel; step S3: putting the cubic boron nitride with the grain diameter of 5um, the cubic boron nitride with the grain diameter of 30um and the diamond with the grain diameter of 100um into a stirrer with the rotating speed of 2000r/min for stirring for 15min to obtain a mixture A;
step S4: directly adding the silica gel and the mixture A in the step S2 into a vacuum kneader for kneading, wherein the temperature of the vacuum kneader is 100 ℃, and the kneading is carried out for 60 minutes; and (3) opening vacuum to perform defoaming treatment, wherein the defoaming time is 2h, and after defoaming and discharging, the finished product is rolled under a calender to obtain the interface material with the thickness of 0.2mm and the ultrahigh heat conduction and low dielectric property.
Performance test
The interface materials with ultra-high heat conductivity and low dielectric properties prepared in the above examples 1 to 5 and comparative examples 1 to 4 were used as samples for heat conductivity test, dielectric constant test, and density test, and the test results are shown in the following table; the heat conductivity coefficient test is measured by reference standard GB10297-1998 method for measuring the heat conductivity coefficient of nonmetallic solid materials; the dielectric constant test is measured by a test method of dielectric constant of the pyroelectric material of the reference standard GB 11297.11-1989; the density test is determined with reference to the standard GB/T533 determination of the density of vulcanized rubber or thermoplastic rubber.
Table 2 data on the properties of the ultra-high thermal conductivity low dielectric interfacial materials prepared in examples 1-5 and comparative examples 1-4.
Referring to Table 2, it can be seen by combining examples 1-5 that the interface material of the present application has a thermal conductivity of more than 7, a dielectric constant of less than 5, good thermal conductivity, and less influence on signal transmission and reception of the heat generating device.
The thermal conductivity of comparative example 1 is reduced and the dielectric constant is slightly increased compared with that of example 1, which is because hexagonal boron nitride is harder to fill than cubic boron nitride, the filling rate is low, and the thermal conductive material is dispersed in the base material to affect the thermal conductive effect.
Compared with the embodiment 1, the thermal conductivity of the diamond is only 5.423 and the dielectric constant is 5.24, which indicates that the diamond and the cubic boron nitride can produce better effect due to the excellent thermal conductivity of the diamond, the particle size of the diamond is larger, and the strength of the diamond is higher, so that the cubic boron nitride can be well and firmly combined.
Compared with the comparative example 3 and the example 1, the heat conductivity is reduced by 1.5, the interface constant is increased by 2.01, which means that the nano alumina powder is mixed into the silica gel matrix, which is favorable for improving the heat conductivity of the interface material and reducing the dielectric constant, and is characterized in that the nano alumina powder has higher surface activity, larger specific surface area and better adsorption property, and has good heat conductivity, the dielectric constant is less than 5, and the nano alumina powder is mixed into the silica gel matrix to be used as a lubricant, so that the cubic boron nitride and the diamond are easier to be filled into the silica gel matrix, the filling rate is high, the heat conductivity is good, and the dielectric constant is low.
Comparative example 4 is compared with example 1, the thermal conductivity of comparative example 4 is only 4.11, the dielectric constant is 7.21, the thermal conduction effect is poor, and the signal transmission of a heating device is affected, because cubic boron nitride and diamond are mixed in a silica gel matrix in a vacuum kneading mode, the combination of the cubic boron nitride and the diamond is not tight enough, and the obvious filling rate of the cubic boron nitride and the diamond paved in the thickness direction of the silica gel matrix is better.
The present embodiment is merely illustrative of the present application and is not intended to be limiting, and those skilled in the art, after having read the present specification, may make modifications to the present embodiment without creative contribution as required, but is protected by patent laws within the scope of the claims of the present application.
Claims (7)
1. The interface material with ultrahigh heat conduction and low dielectric property is characterized by comprising the following raw materials in parts by weight: 10-15 parts of vinyl silicone oil, 3-7 parts of oxygen-containing silicone oil, 50-60 parts of cubic boron nitride, 50-90 parts of diamond, 27-36 parts of reinforcing powder, 0.1-0.3 part of platinum catalyst and 0.2-0.4 part of silane coupling agent;
the reinforcing powder is nano alumina powder with the particle size of 30-60nm;
the preparation of the interface material with ultrahigh heat conduction and low dielectric property comprises the following steps:
step S1: adding vinyl silicone oil, oxygen-containing silicone oil, platinum catalyst and silane coupling agent into a stirrer for stirring, and adding the mixture in the stirrer into a vacuum kneader for once kneading;
step S2: adding the reinforcing powder into a vacuum kneader to carry out secondary kneading with the mixed material, and then opening vacuum to carry out defoaming treatment to obtain silica gel;
step S3: putting the cubic boron nitride with the grain size of 5-10um and the cubic boron nitride with the grain size of 30-40um into a stirrer to be uniformly mixed to obtain a mixture A;
step S4: pouring the silica gel in the step S2 in a mould for the first time, then placing a layer of mixture A, pouring the silica gel, and sequentially operating;
step S5: and (3) calendaring the silica gel subjected to the demolding under a calendar to obtain the interface material with ultrahigh heat conduction and low dielectric property.
2. The ultra-high thermal conductivity low dielectric interface material of claim 1, wherein: the viscosity of the vinyl silicone oil is 100-150cps.
3. The ultra-high thermal conductivity low dielectric interface material of claim 1, wherein: the cubic boron nitride comprises cubic boron nitride with the grain size of 5-10um and cubic boron nitride with the grain size of 30-40um, and the grain size of the diamond is 100-120um.
4. The ultra-high thermal conductivity low dielectric interface material of claim 1, wherein: the rotating speed of the stirrer in the step S1 is 1000-3000r/min, and stirring is carried out for 30-60min; the temperature of the vacuum kneader is 60-90 ℃, and kneading is carried out for 70-90min.
5. The ultra-high thermal conductivity low dielectric interface material of claim 1, wherein: the temperature of the vacuum kneader in the step S2 is 90-120 ℃, and kneading is carried out for 65-95min; vacuum defoamation is carried out for 1-2h.
6. The ultra-high thermal conductivity low dielectric interface material according to claim 4, wherein: the rotating speed of the stirrer in the step S3 is 2000-4000r/min, and the stirring time is 15-20min.
7. The ultra-high thermal conductivity low dielectric interface material according to claim 4, wherein: at least 3 layers of mixture A are arranged in the heat-conducting silica gel sheet in the step S4, and the thickness of the interface material with ultrahigh heat conduction and low dielectric property obtained after calendaring in the step S5 is 0.2-0.4mm.
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| JPH1067910A (en) * | 1996-06-14 | 1998-03-10 | Bergquist Co:The | Semi-solid thermal interface material with low flow resistance |
| CN111378284A (en) * | 2020-04-20 | 2020-07-07 | 苏州天脉导热科技股份有限公司 | Low-dielectric-constant heat-conducting silica gel sheet and preparation method thereof |
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| JPH1067910A (en) * | 1996-06-14 | 1998-03-10 | Bergquist Co:The | Semi-solid thermal interface material with low flow resistance |
| CN111378284A (en) * | 2020-04-20 | 2020-07-07 | 苏州天脉导热科技股份有限公司 | Low-dielectric-constant heat-conducting silica gel sheet and preparation method thereof |
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