CN116646815A - Laser and its preparation method - Google Patents
Laser and its preparation method Download PDFInfo
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- CN116646815A CN116646815A CN202310308102.9A CN202310308102A CN116646815A CN 116646815 A CN116646815 A CN 116646815A CN 202310308102 A CN202310308102 A CN 202310308102A CN 116646815 A CN116646815 A CN 116646815A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The disclosure provides a laser and a preparation method thereof, which are applied to the technical field of semiconductor lasers. The laser comprises an N-face electrode layer, a substrate, an N-type limiting layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer, an inversion layer and a P-face electrode layer, wherein the inversion layer comprises at least one inversion layer unit, and the P-face electrode layer is also in contact with the ohmic contact layer. According to the method, the inversion layer is continuously epitaxially grown on the traditional epitaxial structure, the regional current injection is realized only by one-time photoetching, the insulating layer or ion injection is not required to be deposited, the manufacturing process of the chip is greatly simplified, and the preparation efficiency is improved. Meanwhile, the metal expansion of the P-face electrode layer is facilitated through the concave-convex structure formed between the ohmic contact layer or the P-type limiting layer and the inversion layer, and the adhesive force between the chip and the metal is increased. And the arrangement of a plurality of inversion layer units can realize the mutual coupling between different inversion layer units, thereby improving the quality of light beams.
Description
Technical Field
The disclosure relates to the technical field of semiconductor lasers, in particular to a laser and a preparation method thereof.
Background
The semiconductor laser is a device which forms working substances by a certain semiconductor material to generate stimulated emission effect, has the advantages of small volume, high power, long service life, simple structure, low input energy, strong reliability, low price and the like, becomes a core technology of the current electronic science, and has an application range which not only covers the field of optoelectronics, but also is widely applied to the fields of medical treatment, communication and the like.
In the existing preparation method of the high-power semiconductor laser, complex processes such as at least two times of photoetching process, insulating layer deposition or ion implantation are generally needed after epitaxial growth. However, the more processes introduce more damage to the chip, the more complicated processes will also greatly reduce the manufacturing efficiency of the chip. In addition, in the use process of the conventional semiconductor laser, as the light field of the ridge area is strong, the temperature rise is large, when more carriers are injected from the ridge area, the temperature difference between the ridge area and the insulating areas at two sides can be increased, a thermal lens effect is easily caused, the output power of the semiconductor laser is unstable, and the practical application effect of the semiconductor laser is seriously affected.
Disclosure of Invention
In view of the above problems, the present disclosure provides a laser and a method for manufacturing the same, so as to solve the problems in the prior art that the manufacturing process is complex, and the temperature difference between the ridge region and the insulation regions on two sides is large, which results in poor performance of the laser.
A first aspect of the present disclosure provides a laser comprising:
an N-side electrode layer;
the substrate is arranged on the N-face electrode layer;
the N-type limiting layer is arranged on the substrate;
an N-type waveguide layer arranged on the N-type limiting layer;
an active layer disposed on the N-type waveguide layer;
the P-type waveguide layer is arranged on the active layer;
the P-type limiting layer is arranged on the P-type waveguide layer;
an ohmic contact layer arranged on the P-type limiting layer;
an inversion layer disposed on the ohmic contact layer, the inversion layer including at least one inversion layer unit;
and the P-side electrode layer is arranged on the inversion layer and is also in contact with the ohmic contact layer.
According to an embodiment of the present disclosure, when the number of the at least one inversion layer unit is 1, the inversion layer unit is disposed at an intermediate position on the ohmic contact layer, and the width of the inversion layer unit is 50 μm to 200 μm;
when the number of the at least one inversion layer unit is 2, the inversion layer units are arranged at two side positions on the ohmic contact layer, the widths of the inversion layer units are 50-100 μm, and the interval between the inversion layer units is larger than 200 μm;
when the number of the at least one inversion layer unit is more than or equal to 3, the inversion layer units are uniformly arranged on the ohmic contact layer, the widths of the inversion layer units are 50-100 μm, and the distances between two adjacent inversion layer units are 10-50 μm.
According to an embodiment of the present disclosure, the material doping type of the inversion layer is different from the material doping type of the ohmic contact layer.
According to an embodiment of the present disclosure, the material doping type of the inversion layer is N-type, the thickness of the inversion layer is 200-500nm, the doping material of the inversion layer at least includes GaAs, and the material doping concentration of the inversion layer is 10 15 -10 17 cm -3 。
According to an embodiment of the present disclosure, the thickness of the substrate is 100-200 μm.
A second aspect of the present disclosure provides a method for preparing a laser, applied to preparing the laser according to the first aspect, the method comprising:
sequentially growing an N-type limiting layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer and an inversion layer on a substrate to obtain a grown epitaxial wafer;
etching the grown epitaxial wafer to expose the ohmic contact layer or the P-type limiting layer on the upper surface of the epitaxial wafer to obtain an etched epitaxial wafer;
preparing a P-surface electrode layer on the upper surface of the etched epitaxial wafer;
thinning the lower surface of the substrate to obtain a thinned substrate;
and preparing an N-face electrode layer below the thinned substrate to obtain the laser.
According to embodiments of the present disclosure, the lattice constant of the material from which the inversion layer is made is the same as or matches the lattice constant of the material from which the ohmic contact layer is made.
According to embodiments of the present disclosure, the material from which the P-side electrode layer is made includes one or more of TiPtAu, auZnAu, crAu;
the material for preparing the N-face electrode layer at least comprises AuGeNi/Au.
According to the method, the inversion layer is continuously epitaxially grown on the traditional epitaxial structure, the regional current injection is realized only by one-time photoetching, the insulating layer or ion injection is not required to be deposited, the manufacturing process of the chip is greatly simplified, and the preparation efficiency is improved. Meanwhile, the metal expansion of the P-face electrode layer is facilitated through the concave-convex structure formed between the ohmic contact layer or the P-type limiting layer and the inversion layer, and the adhesive force between the chip and the metal is increased. And because the material doping type of the inversion layer is N type, current cannot be injected from the inversion layer region and can only be injected from the side edge of the inversion layer, so that the temperature difference between the inversion layer region and the region around the inversion layer is reduced, the performance of the laser is improved, and the mutual coupling among different inversion layer units can be realized due to the arrangement of a plurality of inversion layer units, so that the quality of light beams is improved.
Drawings
The foregoing and other objects, features and advantages of the disclosure will be more apparent from the following description of embodiments of the disclosure with reference to the accompanying drawings, in which:
fig. 1 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure;
fig. 2 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure;
fig. 3 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure; and
fig. 4 schematically shows a flow diagram of a method of manufacturing a laser according to an embodiment of the disclosure.
Reference numerals illustrate:
1-N electrode layers; 2-a substrate; a 3-N type limiting layer; a 4-N type waveguide layer; 5-an active layer; a 6-P type waveguide layer; 7-P type limiting layer; an 8-ohmic contact layer; 9-inversion layer; 10-P-side electrode layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. The terms "comprises," "comprising," and/or the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
All terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art unless otherwise defined. It should be noted that the terms used herein should be construed to have meanings consistent with the context of the present specification and should not be construed in an idealized or overly formal manner.
Fig. 1 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure.
As shown in fig. 1, the laser includes: an N-side electrode layer 1, a substrate 2 disposed on the N-side electrode layer 1, an N-type confinement layer 3 disposed on the substrate 2, an N-type waveguide layer 4 disposed on the N-type confinement layer 3, an active layer 5 disposed on the N-type waveguide layer 4, a P-type waveguide layer 6 disposed on the active layer 5, a P-type confinement layer 7 disposed on the P-type waveguide layer 6, an ohmic contact layer 8 disposed on the P-type confinement layer 7, an inversion layer 9 disposed on the ohmic contact layer 8, and a P-side electrode layer 10 disposed on the inversion layer 9. Wherein the inversion layer 9 comprises at least one inversion layer unit, and the P-side electrode layer 10 is also in contact with the ohmic contact layer 8.
According to the method, the inversion layer is continuously epitaxially grown on the traditional epitaxial structure, the regional current injection is realized only by one-time photoetching, the insulating layer or ion injection is not required to be deposited, the manufacturing process of the chip is greatly simplified, and the preparation efficiency is improved.
Fig. 2 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure, and fig. 3 schematically illustrates a cross-sectional structure of a laser according to an embodiment of the present disclosure.
As shown in fig. 1-3, the laser shown in fig. 1 includes 1 inversion layer unit, the laser shown in fig. 2 includes 2 inversion layer units, and the laser shown in fig. 3 includes 3 inversion layer units.
As shown in fig. 1 to 3, in some embodiments, when the number of inversion layer units is 1, the inversion layer units are disposed at intermediate positions on the ohmic contact layer 8, and the width of the inversion layer units is 50 μm to 200 μm; when the number of the inversion layer units is 2, the inversion layer units are arranged at two side positions on the ohmic contact layer 8, the widths of the inversion layer units are 50-100 μm, and the interval between the inversion layer units is larger than 200 μm; when the number of inversion layer units is more than or equal to 3, the inversion layer units are uniformly distributed on the ohmic contact layer 8, the widths of the inversion layer units are 50-100 μm, and the distances between two adjacent inversion layer units are 10-50 μm.
According to an embodiment of the present disclosure, the material doping type of the inversion layer 9 is different from the material doping type of the ohmic contact layer 8.
According to an embodiment of the present disclosure, the material doping type of the inversion layer 9 is N-type, the thickness of the inversion layer 9 is 200-500nm, the doping material of the inversion layer 9 at least comprises GaAs, and the material doping concentration of the inversion layer 9 is 10 15 -10 17 cm -3 。
According to an embodiment of the present disclosure, the thickness of the substrate 2 is 100-200 μm.
In the method, the material doping type of the inversion layer is different from that of the ohmic contact layer, so that current cannot be injected from the inversion layer region and can only be injected from the side edge of the inversion layer, the temperature difference between the inversion layer region and the region around the inversion layer is reduced, the performance of the laser is improved, and the arrangement of at least one inversion layer unit can realize the mutual coupling between different inversion layer units, so that the quality of light beams is improved.
Fig. 4 schematically shows a flow diagram of a method of manufacturing a laser according to an embodiment of the disclosure. The preparation method is applied to preparing the laser shown in fig. 1-3, and comprises the steps of S1-S5.
And step S1, sequentially growing an N-type limiting layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer and an inversion layer on a substrate to obtain a well-grown epitaxial wafer.
And S2, carrying out corrosion treatment on the grown epitaxial wafer so as to enable the upper surface of the epitaxial wafer to expose the ohmic contact layer or the P-type limiting layer, thereby obtaining the epitaxial wafer after corrosion treatment.
And S3, preparing a P-surface electrode layer on the upper surface of the etched epitaxial wafer.
And S4, thinning the lower surface of the substrate to obtain the thinned substrate.
And S5, preparing an N-face electrode layer below the thinned substrate to obtain the laser.
According to an embodiment of the present disclosure, the lattice constant of the material from which the inversion layer 9 is made is the same as or matches the lattice constant of the material from which the ohmic contact layer 8 is made.
According to an embodiment of the present disclosure, the material from which P-side electrode layer 10 is made includes one or more of TiPtAu, auZnAu, crAu and the material from which N-side electrode layer 1 is made includes at least AuGeNi/Au.
The method of fabricating the laser in one embodiment is described in detail below with reference to fig. 1-4.
Referring to fig. 1 to 4, the above step S1 is performed: and sequentially growing an N-type limiting layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer and an inversion layer on the substrate to obtain the grown epitaxial wafer. Specifically, the above-described N-type confinement layer 3, N-type waveguide layer 4, active layer 5, P-type waveguide layer 6, P-type confinement layer 7, ohmic contact layer 8, and inversion layer 9 are sequentially grown on the substrate 2 by an epitaxial growth technique such as MOCVD, MBE, or the like. Wherein the doping type of the material of the inversion layer 9 is different from the doping type of the material of the ohmic contact layer 8, but the lattice constant of the material of which the inversion layer 9 is made is the same as or matches the lattice constant of the material of which the ohmic contact layer 8 is made. The material doping type of the inversion layer 9 is N type, the doping material of the inversion layer 9 at least comprises GaAs, and the tunneling effect of the carrier under the heavy current can occur due to the excessively high doping concentration, so the material doping concentration of the inversion layer 9 is controlled at 10 15 -10 17 cm -3 . And the thickness of the inversion layer 9 is too thin, so that the later corrosion is easy to be corroded, and the thickness is too large, and the light field distribution of the device is influenced, so that the thickness of the inversion layer 9 is controlled to be 200-500nm. The material doping type of the ohmic contact layer 8 is P type, the doping material of the ohmic contact layer 8 at least comprises GaAs, and the material doping concentration of the ohmic contact layer 8 is more than 10 19 cm -3 。
It should be noted that, the present disclosure does not limit the specific epitaxial technical means, and any method capable of growing and forming the N-type confinement layer 3, the N-type waveguide layer 4, the active layer 5, the P-type waveguide layer 6, the P-type confinement layer 7, the ohmic contact layer 8 and the inversion layer 9 is within the protection scope of the present disclosure.
Referring to fig. 1 to 4, the above step S2 is performed: and carrying out corrosion treatment on the grown epitaxial wafer so as to enable the upper surface of the epitaxial wafer to expose the ohmic contact layer or the P-type limiting layer, thereby obtaining the epitaxial wafer after corrosion treatment. Specifically, photoresist is coated on the grown epitaxial wafer, and the photoresist on the inversion layer unit shown in fig. 1-3 is left after photoetching and developing, so that the photoresist around the inversion layer unit is removed. And placing the developed epitaxial wafer in an etching solution of the material of the inversion layer 9 for etching so that the upper surface of the etched epitaxial wafer is exposed out of the ohmic contact layer 8 or the P-type limiting layer 7, otherwise, current cannot be injected. The etching time is related to the thickness and etching rate of the inversion layer 9, and an uneven concave-convex structure is formed between the ohmic contact layer 8 or the P-type confinement layer 7 and the inversion layer 9 after etching.
Referring to fig. 1 to 4, the above step S3 is performed: and preparing a P-surface electrode layer on the upper surface of the etched epitaxial wafer. Specifically, the P-surface electrode layer 10 is prepared on the upper surface of the etched epitaxial wafer by adopting a stripping method, a wet etching method or a dry etching method, and the materials for preparing the P-surface electrode layer 10 include one or more of TiPtAu, auZnAu, crAu.
Referring to fig. 1 to 4, the above step S4 is performed: and carrying out thinning treatment on the lower surface of the substrate to obtain the thinned substrate. Since the thinning of the substrate 2 is helpful for heat dissipation of the chip, but cannot be too thin to perform subsequent processes, the lower surface of the substrate 2 is polished and thinned until the thickness of the substrate 2 is 100-200 μm.
Referring to fig. 1 to 4, the above step S5 is performed: and preparing an N-face electrode layer below the thinned substrate to obtain the laser. Specifically, after the substrate 2 is thinned, the N-side electrode layer 1 is prepared below the substrate 2. Materials for N-side electrode layer 1 include, but are not limited to: auGeNi/Au.
As shown in fig. 1, since the equivalent refractive index of the region of the inversion layer 9 is greater than that of the etched region, the carriers injected from the inversion layer 9 are blocked by the potential barrier formed by the inversion layer 9 and the ohmic contact layer 8, and thus the current injection in the laser is achieved by the diffusion of the carriers on both sides of the inversion layer 9. In the horizontal direction the light field is still localized in the ridge region formed by the inversion layer 9.
As shown in fig. 2, the current injection in the laser is through the etched region between the two inversion layer elements. The equivalent refractive index of the region of the inversion layer 9 in the laser is larger than that of the etched region, but the optical field in the horizontal direction is mainly concentrated in the etched region because the optical field in the etched region is less affected by the larger spacing between the two inversion layer units.
As shown in fig. 3, the current injection in the laser is through the etched region between the inversion layer units, wherein the injection can also be achieved by two-sided carrier diffusion under the inversion layer 9. The equivalent refractive index of the region of the inversion layer 9 in the laser is greater than that of the etched region, and the optical field is localized in the ridge region formed by the inversion layer unit. Because the interval between different inversion layer units is smaller, the light fields can be mutually coupled, and the light beam quality in the horizontal direction can be improved.
In summary, the present disclosure utilizes the concave-convex structure formed between the ohmic contact layer or the P-type confinement layer and the inversion layer to facilitate the metal expansion of the P-side electrode layer and increase the adhesion between the chip and the metal by continuing to epitaxially grow an inversion layer on the conventional epitaxial structure. And because the material doping type of the inversion layer is different from that of the ohmic contact layer, current cannot be injected from the inversion layer region and can only be injected from the side edge of the inversion layer, so that the temperature difference between the inversion layer region and the region around the inversion layer is reduced, the performance of the laser is improved, the arrangement of a plurality of inversion layer units can realize the mutual coupling between different inversion layer units, and the quality of light beams is improved. By the preparation method of the laser, regional current injection is realized only by one-time photoetching, an insulating layer or ion injection is not required to be deposited, the chip manufacturing process is greatly simplified, the damage of the chip is reduced, and the chip preparation efficiency is improved.
Those skilled in the art will appreciate that the features recited in the various embodiments of the disclosure and/or in the claims may be combined in various combinations and/or combinations, even if such combinations or combinations are not explicitly recited in the disclosure. In particular, the features recited in the various embodiments of the present disclosure and/or the claims may be variously combined and/or combined without departing from the spirit and teachings of the present disclosure. All such combinations and/or combinations fall within the scope of the present disclosure.
The embodiments of the present disclosure are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the disclosure, and such alternatives and modifications are intended to fall within the scope of the disclosure.
Claims (9)
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| CN202310308102.9A CN116646815A (en) | 2023-03-27 | 2023-03-27 | Laser and its preparation method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922499A (en) * | 1988-02-09 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor laser device and the manufacturing method thereof |
| US5271028A (en) * | 1991-07-22 | 1993-12-14 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| JP2000277852A (en) * | 1999-03-24 | 2000-10-06 | Fuji Xerox Co Ltd | Surface emitting semiconductor laser and manufacturing method |
| CN110783812A (en) * | 2019-11-21 | 2020-02-11 | 江苏索尔思通信科技有限公司 | InP-based semiconductor laser structure with low contact resistance and preparation method thereof |
-
2023
- 2023-03-27 CN CN202310308102.9A patent/CN116646815A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4922499A (en) * | 1988-02-09 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor laser device and the manufacturing method thereof |
| US5271028A (en) * | 1991-07-22 | 1993-12-14 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| JP2000277852A (en) * | 1999-03-24 | 2000-10-06 | Fuji Xerox Co Ltd | Surface emitting semiconductor laser and manufacturing method |
| CN110783812A (en) * | 2019-11-21 | 2020-02-11 | 江苏索尔思通信科技有限公司 | InP-based semiconductor laser structure with low contact resistance and preparation method thereof |
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