CN116565697A

CN116565697A - Laser and method for manufacturing laser

Info

Publication number: CN116565697A
Application number: CN202310436701.9A
Authority: CN
Inventors: 王帅; 陈欣; 徐海军; 刘江
Original assignee: Zhejiang Thermal Stimulation Optical Technology Co ltd
Current assignee: Zhejiang Thermal Stimulation Optical Technology Co ltd
Priority date: 2023-04-20
Filing date: 2023-04-20
Publication date: 2023-08-08

Abstract

The application provides a laser and a manufacturing method of the laser, and relates to the technical field of lasers. According to the laser provided by the application, the plating layer on the welding area for welding the plurality of single-tube laser chips is formed by magnetron sputtering, so that the plating layer on the local area of the tube shell comprising the welding area is allowed to be used for installing the single-tube laser chips by welding, and the whole plating layer is not needed for the tube shell, thereby being beneficial to reducing the processing cost of the tube shell. According to the laser provided by the application, the plating layer is obtained by adopting the magnetron sputtering mode, compared with the gold electroplating mode in the prior art, the target material used by the laser provided by the application has oxidation resistance weaker than gold, and the plating layer can be obtained by adopting the easily oxidized metal material, for example, silver can be adopted as the target material, so that the plating layer can be ensured to be uniform and compact, and the manufacturing cost of the laser is greatly reduced.

Description

Laser and method for manufacturing laser

Technical Field

The present disclosure relates to the field of laser technologies, and in particular, to a laser and a method for manufacturing the laser.

Background

The semiconductor laser has the advantages of small volume, light weight and the like, and is widely applied to the fields of industry, communication, military, medical treatment and the like. Because the single-tube semiconductor chip has the advantages of high photoelectric efficiency, long service life and the like, the single-tube semiconductor chip is commonly applied to an optical fiber coupling semiconductor laser. However, because the single tube has lower power, a plurality of single tubes are usually welded into a packaging tube shell, the single tubes are collimated by a fast axis and a slow axis and then spatially combined, and the output power of the single tube is improved by coupling into an optical fiber after focusing.

In fiber-coupled semiconductor lasers, single-tube chips are often encapsulated with COS, i.e., chip on Submount, and the chips are encapsulated to a Submount, typically a gold-plated ceramic heat sink. And a plurality of COS are welded to the gold-plated tube shell for packaging and heat dissipation. In order to ensure the welding and heat dissipation characteristics of COS and the tube shell, the tube shell used by the semiconductor laser pumping source is mostly made of copper gold plating so as to ensure the welding and heat dissipation performance of COS and the tube shell, and the inner and outer surfaces of the tube shell are generally all plated with gold, so that the cost is high.

At present, a plurality of semiconductor single-tube laser tube shells adopt a gold electroplating mode on a copper base material, and gold electroplating is carried out on the whole tube shell, so that the welding quality of a welding surface of COS and the tube shell is good, and the heat dissipation performance is good. The shell plating hardware only can carry out electro-plating on metal and conductive base materials, has low plating speed, generates waste liquid, waste water, toxic substances and the like during plating, and has influence on the environment. In addition, the plating is difficult to realize the plating of the local plating layer of the tube shell, especially the local plating of the tube shell with the special structure is difficult to protect, so the cost control is difficult. In addition, the electroplating method is difficult to realize electroplating of the easily-oxidized material, and meanwhile, a uniform plating layer with high density is difficult to form.

Disclosure of Invention

In view of the above, the present application provides a laser and a method for manufacturing the laser, which aims to solve at least one of the above problems.

In a first aspect, the present application provides a laser comprising a package comprising a soldering zone for soldering a plurality of single-tube laser chips, the soldering zone being covered with a coating formed by a target material plated in a magnetron sputtering manner, the target material having a less oxidation resistance than gold.

Preferably, the welding region comprises a first region and a second region, the first region and the second region are arranged at intervals in a first direction, and the first region and the second region both extend along a second direction;

the laser comprises a plurality of single-tube laser chips, and the first area and the second area are used for arranging the single-tube laser chips;

the single-tube laser chips positioned in the first area and the single-tube laser chips positioned in the second area are arranged in a staggered mode in the second direction, and the second direction is perpendicular to the first direction.

Preferably, the package further includes a mounting region located between the first region and the second region in the first direction, the laser includes a plurality of reflectors disposed in one-to-one correspondence with the plurality of single-tube laser chips, and the plurality of reflectors are disposed in the mounting region;

the reflectors corresponding to the single-tube laser chips positioned in the first area and the reflectors corresponding to the single-tube laser chips positioned in the second area are staggered in the second direction.

wherein each of the mirrors includes a first side portion perpendicular to the second direction.

Preferably, each of the mirrors further comprises a second side portion perpendicular to the first direction, such that a cross section of the mirror taken by a plane defined by the first direction and the second direction is isosceles trapezoid.

Preferably, the welding region comprises a first region and a second region, the first region and the second region are arranged at intervals in a first direction, and the first region and the second region both extend along a second direction; the laser comprises a plurality of single-tube laser chips, and the first area and the second area are used for arranging the single-tube laser chips;

the cartridge further includes a mounting region located between the first region and the second region in the first direction, the mounting region including a plurality of mounting stepped portions aligned along the second direction, the plurality of mounting stepped portions being sequentially lowered along the second direction;

the laser comprises a reflector and a slow axis collimating mirror which are arranged in the mounting area and correspond to each single-tube laser chip;

wherein, the reflecting mirror and the slow axis collimating mirror corresponding to each single-tube laser chip arranged in the first area are arranged at the same mounting step part;

among the reflecting mirrors and the slow-axis collimating mirrors corresponding to each single-tube laser chip arranged in the second area, the reflecting mirrors are arranged on the higher one of the adjacent installation stepped parts, and the slow-axis collimating mirrors are arranged on the lower one of the adjacent installation stepped parts.

wherein the laser further comprises a light shielding member provided on at least one side in the second direction in front of the light emitting position of each of the single-tube laser chips for each of the first region and the second region.

Preferably, the cartridge further includes a mounting region located between the first region and the second region in the first direction, the mounting region including a plurality of mounting stepped portions arranged along the second direction, the plurality of mounting stepped portions being sequentially lowered along the second direction;

each of the mounting stepped portions includes a recess for mounting the light shielding member.

In a second aspect, the present application provides a method of manufacturing a laser including a package including a bonding region for bonding a plurality of single-tube laser chips, the method comprising:

shielding the envelope to expose the weld area;

plating a target material on the exposed welding area by utilizing a magnetron sputtering mode so as to form a plating layer on the welding area;

wherein the target material has oxidation resistance weaker than gold.

Preferably, said shielding said envelope to expose said weld area comprises:

the tube shell is shielded by the jig, so that the welding area is exposed, the jig comprises an opening, and the opening gradually expands from the side of the tube shell to the side of the jig in the depth direction of the opening.

According to the laser provided by the application, the plating layers on the welding areas for welding the single-tube laser chips are formed by magnetron sputtering, compared with the tube shell of the laser manufactured by adopting an electro-gold plating mode in the prior art, the laser provided by the application can allow the plating layers to be formed on the local area of the tube shell, comprising the welding areas, so that the single-tube laser chips can be installed in a welding mode without carrying out all plating layers on the tube shell, and the processing cost of the tube shell is reduced. According to the laser provided by the application, the plating layer is obtained by adopting the magnetron sputtering mode, compared with the gold electroplating mode in the prior art, the target material used by the laser provided by the application has oxidation resistance weaker than gold, and the plating layer can be obtained by adopting the easily oxidized metal material, for example, silver can be adopted as the target material, so that the plating layer can be ensured to be uniform and compact, and the manufacturing cost of the laser is greatly reduced.

In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 shows a schematic diagram of a top view of a laser provided in accordance with an embodiment of the present application;

FIG. 2 shows a schematic diagram of an isometric view of a laser provided in accordance with an embodiment of the present application;

FIG. 3 is a schematic diagram showing an isometric view of a portion of a structure of a laser provided in accordance with an embodiment of the present application;

FIG. 4 is a schematic diagram illustrating an isometric view of yet another portion of the structure of a laser provided in accordance with an embodiment of the present application;

fig. 5 is a schematic diagram showing a top view of a jig mounted on a package of a laser according to an embodiment of the present application;

FIG. 6 shows a schematic diagram of a cross-sectional view of section A-A in FIG. 5;

fig. 7 shows a schematic diagram of an isometric view of a jig mounted on a package of a laser according to an embodiment of the present application.

Reference numerals:

100-pipe shells; 110-a welding area; 111-a first region; 112-a second region; 113-a mounting area; 113 a-mounting steps; 113 b-a recess;

210-COS;220—small mirrors; 230-a first side; 240-a second side; 250-a slow axis collimating mirror; 260-a light shielding member; 270-a fast axis collimator; 280—a large mirror; 291-PBS; 292-aspherical mirror; 293-end cap fiber;

f1-a first direction; f2-a second direction;

300-jig; 310-opening; 320-bevel.

Detailed Description

The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be regarded as not exist and not within the protection scope of the present application.

According to a first aspect of embodiments of the present application, a laser is provided, and the structure and operation of the laser will be described in detail below with reference to fig. 1 to 4.

According to the laser provided by the embodiment of the application, the laser comprises a tube shell 100, the tube shell 100 comprises a welding area 110 for welding a plurality of single-tube laser chips, the welding area 110 is covered with a plating layer formed by a target material plated in a magnetron sputtering mode, and the oxidation resistance of the target material is weaker than that of gold.

As such, according to the laser provided in the embodiment of the present application, which is used for welding, the plating layer on the welding area 110 where the plurality of single-tube laser chips are mounted is formed by magnetron sputtering, compared to the package 100 of the laser manufactured by electro-gold plating in the prior art, the laser provided in the embodiment of the present application can allow the plating layer to be formed on the local area of the package 100 including the welding area 110, so as to mount the single-tube laser chips by welding, without performing the entire plating layer on the package 100, which is advantageous for reducing the processing cost of the package 100. According to the laser provided by the embodiment of the application, as the plating layer is obtained by adopting the magnetron sputtering mode, compared with the gold electroplating mode in the prior art, the oxidation resistance of the target material used by the laser provided by the embodiment of the application is weaker than that of gold, and the plating layer can be obtained by adopting the easily oxidized metal material, for example, silver (silver is extremely easily oxidized) as the target material, and the plating layer can be ensured to be uniform and compact, so that the manufacturing cost of the laser is greatly reduced.

In addition, in the embodiment, the laser provided according to the embodiment of the present application does not generate waste liquid, waste water and toxic substances during the process of plating the welding region 110. And the coating obtained by means of magnetron sputtering has a better protective effect on the welding area 110, in particular on the welding area 110 having a complex structure such as a profiled structure, in other words, the coating obtained by means of magnetron sputtering allows the welding area 110 to have a more complex structure with respect to the welding area 110 of the envelope 100 of the prior art.

In an embodiment, the single-tube laser chip may be soldered to the soldering region 110 of the package 100 of the laser after packaging, which may be a single-tube semiconductor chip (thus the laser provided according to embodiments of the present application is a substantially semiconductor laser), by way of example, and the packaging may be packaged using a COS 210, which is referred to as a single-tube laser chip in the following partial description. In addition, each COS 210 may be equipped with a fast axis collimator 270 (Fast Axis Collimator, FAC), which performs fast axis collimation of the light emitted by the single-tube laser chip.

In an embodiment, the welding region 110 may include a first region 111 and a second region 112, the first region 111 and the second region 112 may be spaced apart in the first direction F1, and the first region 111 and the second region 112 may each extend along the second direction F2. The laser may comprise a plurality of single-tube laser chips, and both the first region 111 and the second region 112 may be used to provide single-tube laser chips. Wherein the single-tube laser chips located in the first region 111 and the single-tube laser chips located in the second region 112 may be staggered in a second direction F2, and the second direction F2 may be perpendicular to the first direction F1.

As shown in fig. 1, the welding region 110 of the package 100 of the laser according to the embodiment of the present application may include the first region 111 and the second region 112 as described above, and the first region 111 and the second region 112 may be in a stripe shape extending along the second direction F2, and may each be used to provide the COS 210, i.e., weld the COS 210 to the first region 111 and the second region 112. That is, a plurality of COS 210 may be disposed at intervals along the second direction F2 in the first region 111, a plurality of COS 210 may be disposed at intervals along the second direction F2 in the second region 112, and the COS 210 of the first region 111 and the COS 210 of the second region 112 may be staggered in the second direction F2. The staggered arrangement makes the COS 210 located in the two areas in an asymmetric opposite arrangement, that is, the opposite position of the light emergent position of each COS 210 in the first direction F1 is a null position, that is, "blank insertion", so that the light emitted by the COS 210 in the two areas can be prevented from affecting each other, thereby being beneficial to prolonging the service life of the laser.

In addition, as shown in fig. 1, according to the laser provided in the embodiment of the application, two rows of COS 210 are equivalently disposed on the same package 100, and by using the staggered arrangement manner mentioned above, the number of COS 210 that can be mounted on the same package 100 is increased under the condition that any one row of COS 210 in the two rows of COS 210 does not affect the other row of COS 210.

In an embodiment, the first region 111 and the second region 112 may each include a plurality of step structures, and each step structure may be provided with one COS 210, i.e., one COS 210 is welded. In an embodiment, the first region 111 and the second region 112 are identical in arrangement of the step structures, and, taking the first region 111 as an example, the plurality of step structures may be gradually lowered along the second direction F2 (may be combined with fig. 2 to 4), and an upper surface of each step structure may be planar and formed with a groove portion adapted to the shape of the COS 210, thereby positioning the COS 210 in the groove portion for welding. In the embodiment, as an example, the number of the step structures of the second region 112 may be one more than the number of the step structures of the first region 111, and in correspondence thereto, each step structure is provided with one COS 210, so that the number of the COS 210 of the second region 112 is one more than the number of the COS 210 of the first region 111, whereby the COS 210 of the second region 112 and the COS 210 of the first region 111 are alternately arranged. In the embodiment, as an example, the number of the stepped structures of the second region 112 may be 9, and the number of the stepped structures of the first region 111 may be 8.

In an embodiment, the package 100 may further include a mounting region 113 located between the first region 111 and the second region 112 in the first direction F1, and the laser may include a plurality of mirrors disposed in one-to-one correspondence with the plurality of single-tube laser chips, and the plurality of mirrors may be disposed at the mounting region 113. Among them, the mirrors corresponding to the single-tube laser chips located in the first region 111 and the mirrors corresponding to the single-tube laser chips located in the second region 112 may be staggered in the second direction F2.

According to the laser provided in the embodiment of the present application, a part of the plurality of mirrors is disposed corresponding to the COS 210 in the first region 111, and another part of the plurality of mirrors is disposed corresponding to the COS 210 in the second region 112, so that the mirrors disposed corresponding to the COS 210 in the first region 111 may be disposed as the first column of mirrors aligned along the second direction F2, the mirrors disposed corresponding to the COS 210 in the second region 112 may be disposed as the second column of mirrors aligned along the second direction F2, and the first column of mirrors and the second column of mirrors may also be disposed alternately in the second direction F2 in a similar manner to the manner in which the COS 210 in the above two regions are disposed alternately, so that the volume of the laser can be further reduced.

Further, the comparison with the subsequently mentioned large mirror 280, here and subsequently mentioned mirrors provided at the mounting region 113 may accordingly be referred to as small mirrors 220.

In an embodiment, as shown in fig. 2, each mirror may include a first side 230 perpendicular to the second direction F2. The mirrors in the prior art generally have protruding corners, and according to the laser provided in the embodiment of the present application, each mirror has the first side 230 perpendicular to the second direction F2, which makes it possible to effectively define the dimension of each mirror in the second direction F2 by the first side 230, thereby being beneficial to controlling the dimension of the mirror in the second direction F2, avoiding shielding the light emitted by the COS 210, being beneficial to reducing the interval between the COS 210 and the COS 210 in the second direction F2, and further reducing the volume of the laser.

Further, in an embodiment, as shown in fig. 2, each mirror further comprises a second side 240 perpendicular to the first direction F1, such that the cross section of the mirror taken by a plane defined by the first direction F1 and the second direction F2 is isosceles trapezoid. According to the laser provided in the embodiments of the present application, the reflecting mirror may be formed into a substantially quadrangular prism structure, and the aforementioned plane may be perpendicular to the top view, that is, the shape of the reflecting mirror as observed in fig. 1 is the aforementioned cross section, which is also advantageous for reducing the size of the laser in the first direction F1, thereby further reducing the volume of the laser.

In an embodiment, the package 100 of the laser may further include a mounting region 113 located between the first region 111 and the second region 112 in the first direction F1, the mounting region 113 may include a plurality of mounting stepped portions 113a arranged along the second direction F2, and the plurality of mounting stepped portions 113a may be sequentially lowered along the second direction F2. The laser includes a mirror (i.e., the mirror described above) and a slow axis collimator 250 disposed in the mounting region 113 for each single-tube laser chip. Wherein the reflecting mirror and the slow axis collimating mirror 250 corresponding to each single-tube laser chip disposed in the first region 111 are disposed in the same mounting step 113a.

As shown in fig. 1, according to the laser provided in the embodiment of the present application, in the embodiment, the mirror corresponding to the same COS 210 and the slow axis collimator 250 (i.e. Slow Axis Collimator, SAC) are disposed at intervals in the first direction F1, where, for each of the COS 210 in the first area 111, the mirror corresponding to the COS 210 and the slow axis collimator 250 are both disposed on the same mounting step portion 113a, so that the mounting structure for the mirror and the mounting structure for the slow axis collimator 250 can be processed on the same horizontal plane (i.e. the upper end face of the mounting step portion 113 a), which is advantageous for reducing the processing difficulty of the mounting area 113, i.e. for reducing the processing difficulty of the package 100.

In the embodiment, as shown in fig. 1, among the mirrors and slow axis collimator mirrors 250 corresponding to each single-tube laser chip disposed in the second region 112, the mirror is disposed at a higher one of the adjacent mounting step portions 113a, and the slow axis collimator mirror 250 is disposed at a lower one of the adjacent mounting step portions 113a. According to the laser provided in the embodiment of the application, on the basis of the above arrangement mode of the reflecting mirror and the slow axis collimating mirror 250 corresponding to each COS 210 in the first region 111, the reflecting mirror and the slow axis collimating mirror 250 corresponding to each COS 210 in the second region 112 are respectively located in the adjacent mounting step portion 113a, so that the space for mounting the step portion 113a is advantageously fully utilized.

In an embodiment, the laser may further include a light shielding member 260, and the light shielding member 260 is provided at least one side in the second direction F2 in front of the light emitting position of each single-tube laser chip for each of the first region 111 and the second region 112. According to the laser provided in the embodiment of the application, the front of the light emitting position of each COS 210 is on the side of the mounting region 113, and the front is provided with the light shielding member 260 on at least one side in the second direction F2, which is beneficial to preventing the opposite stray light from entering the cavity surface of the COS 210, and thus is beneficial to prolonging the service life of the laser. As an example, in an embodiment, as shown in fig. 1, one light shielding member 260 may be provided on the right side in front of the light emitting position of the first COS 210 of the second region 112, the light shielding member 260 may not be provided on the left side, and both sides in front of the light emitting position of the remaining COS 210 in the second direction F2 may be provided with the light shielding members 260. In an embodiment, the light shielding member 260 may be a light blocking plate as an example.

As shown in fig. 1, in the embodiment, on the basis that the reflecting mirror and the slow axis collimating mirror 250 corresponding to each single-tube laser chip disposed in the first area 111 are disposed in the same mounting step portion 113a, each mounting step portion 113a further includes a recess 113b for mounting the light shielding member 260, so according to the laser provided in the embodiment of the present application, the processing difficulty of the mounting area 113 can be further reduced by further including the recess 113b for mounting the light shielding member 260 on the same mounting step portion 113a. In the embodiment, as an example, the concave portions 113b may be provided in two rows, each row of concave portions 113b being arranged along the second direction F2, the concave portions 113b of the two rows being arranged at intervals in the first direction F1, the concave portions 113b being provided on the corresponding mounting stepped portions 113a for any concave portion 113b of each row of concave portions 113 b.

In addition, in an embodiment, the laser further includes another mirror (described herein as a large mirror 280 due to its large size), PBS (Polarization Beam Splitter, polarizing beam splitter), aspheric mirror 292, and end cap fiber 293 disposed in the weld region 110 and mounting region 113 of the package 100, the above-mentioned mirror disposed in the mounting region 113 being a small mirror 220, the manner in which these components operate being described in more detail below.

Specifically, the magnetron sputtering local silvering semiconductor laser in the embodiment of the application comprises: the partial silver plating package 100, the COS bonding region one (first region 111), the COS bonding region two (second region 112), the light blocking sheet mounting region (recess 113 b), the collimator and beam combining mounting step region (mounting region 113), the polarization and coupling region, the COS 210, FAC, SAC, the light blocking sheet (light blocking member 260), the small mirror 220, the large mirror 280, the PBS 291 polarization beam combining, the aspherical mirror 292, and the end cap fiber 293.

The COS 210 is mounted on two COS welding areas (a first area 111 and a second area 112) on the magnetron sputtering local silver plating tube shell 100, each COS 210 on the two COS welding areas is mounted with a FAC to perform fast axis collimation on light emitted by a single tube, then the light is subjected to slow axis collimation through a SAC mounted on a collimating mirror and a beam combining mounting stepped area (a mounting area 113), and then two parallel laser arrays are formed after reflection through a small reflector 220 mounted on the collimating mirror and the small reflector 220 mounting stepped area (the mounting area 113), and polarization beam combining of the two parallel laser arrays is realized through a large reflector 280 and PBS 291 to form a line of light in polarization beam combining, and the light enters an end cap optical fiber 293 through focusing of a coupling lens (an aspherical mirror 292). The light blocking sheet is mounted in the light blocking sheet mounting region (recess 113 b).

The magnetron sputtering part silver-plated semiconductor laser tube 100 is provided with COS welding areas in stepped distribution, COS 210 light-emitting surfaces on two sides are oppositely placed, and the placing positions are asymmetrically distributed in an empty inserting mode, and the size of the collimating mirror mounting area 113 and the size of the small reflecting mirror 220 mounting area 113 (the mounting area 113) in the length direction can be reduced by adopting the COS 210 empty inserting placing mode, so that the size of the laser is reduced. The areas for placing the light blocking sheets are arranged in the front steps of the COS placing areas on the two sides, and can shield the light diverging to the edge of the COS 210, so that the COS 210 at the corresponding position is protected. The tube 100 is provided with a step-distributed collimator and small reflector 220 beam combining installation area, and the collimator and small reflector 220 installation area 113 is positioned in the same height step installation area 113, so that the tube 100 is convenient to process. The package 100 has a PBS 291 polarization beam combining mounting area and an aspherical mirror 292 fiber coupling mounting area thereon. The small semiconductor laser reflector 220 adopts a trapezoid design scheme, so that shielding of outgoing light of the opposite COS 210 by the back corners of the small rectangular reflector 220 (namely, a cuboid structure like the large reflector 280) can be effectively reduced, the distance between the opposite COS 210 and the COS 210 is reduced, and the size of the semiconductor laser is reduced.

According to the characteristics described above, the embodiment of the application provides a semiconductor laser with magnetron sputtering local silver plating, which enables single-tube COS 210 and semiconductor laser tube shell 100 to realize good welding and heat dissipation performance, improves the non-uniformity of gold plating of semiconductor tube shell 100, and solves the defects of difficult local electroplating, high cost, incapability of realizing plating evaporation of nonmetallic materials, and the like. In addition, the semiconductor laser adopts the asymmetric opposite insertion arrangement of the COS 210 at two sides, so that the light emitted by the opposite COS 210 is prevented from being influenced mutually, the light blocking sheets are arranged at two sides in front of the light emergent of the COS 210, the opposite stray light is prevented from entering the light-emitting area of the COS 210, and the service life of the semiconductor laser is prolonged. The SAC corresponding to the COS 210 has the small mirrors 220 on the same step and arranged in a cross arrangement, which is beneficial to reducing the volume of the semiconductor laser and reducing the processing difficulty of the package 100. The small reflector 220 has a trapezoid structure, which can avoid shielding light emitted to the COS 210, and is beneficial to reducing the interval between the COS 210 and the COS 210, thereby reducing the volume of the semiconductor laser.

According to the laser provided by the embodiment of the application, the COS 210 is directly welded on the COS 210 step of the magnetron sputtering local silver plating tube shell 100, and the rest positions of the tube shell 100 except for the local silver plating of the COS 210 welding region 110 are not plated with silver, so that the effective heat dissipation of the semiconductor laser can be realized, and the cost of the semiconductor laser is reduced. The local silver plating of some non-conductive materials such as the high thermal conductivity ceramic package 100 can also be realized by adopting a magnetron sputtering local silver plating mode. The COS 210 on two sides are arranged in an asymmetric opposite insertion way, so that the mutual influence of light emitted by the opposite COS 210 is prevented, and the service life of the semiconductor laser is prolonged. And the light blocking sheets are placed on the two sides of the front of the light emergent surface of the COS 210, so that the opposite stray light is prevented from entering the cavity surface of the COS 210, and the service life of the semiconductor laser is prolonged. The SAC corresponding to the COS 210 is located on the same step with the small mirror 220, which is beneficial to reducing the processing difficulty of the envelope 100. The small mirrors 220 are arranged in a cross arrangement to the SAC corresponding to the COS 210, which is advantageous for reducing the volume of the semiconductor laser. The small reflector 220 has a trapezoid structure, which can avoid shielding light emitted to the COS 210, and is beneficial to reducing the interval between the COS 210 and the COS 210, thereby reducing the volume of the semiconductor laser.

According to a second aspect of the present application, there is provided a method of manufacturing a laser, the laser comprising a package 100, the package 100 comprising a soldering region 110 for soldering a plurality of single-tube laser chips, the method comprising: shielding the envelope 100 to expose the weld area 110; plating a target material on the exposed welding area 110 by utilizing a magnetron sputtering mode to form a plating layer on the welding area 110; wherein the oxidation resistance of the target is weaker than that of gold. Here, the beneficial effects of the method have been described in the above description of the laser, and will not be described here again.

In an embodiment, shielding the package 100 to expose the weld area 110 includes: the jig 300 is used to shield the package 100 to expose the welding area 110, and the jig 300 includes an opening 310, and the opening 310 gradually expands from the side of the package 100 to the side of the jig 300 in the depth direction of the opening 310. According to the method provided by the embodiment of the application, the jig 300 is covered on the tube shell 100, and the welding area 110 is exposed by using the opening 310 on the jig 300 so as to realize that the welding area 110 is covered with the plating layer and the rest positions are not covered with the plating layer. In an embodiment, with reference to fig. 5, 6 and 7, the gradual expansion of the opening 310 from bottom to top may be accomplished by a ramp 320 that acts as the inside of the opening 310, thereby facilitating deposition of a sputter-directed target on the welding region 110.

In an embodiment, a single tube of the semiconductor laser packaged by COS 210 is welded on a tube shell 100 with stepped magnetron sputtering local silvering, the tube shell 100 is made of high heat conduction materials such as high heat conduction metals and non-metals including red copper, tungsten copper, molybdenum copper, aluminum-silicon carbide, graphite, silicon carbide, aluminum nitride ceramics and the like, the tube shell 100 is provided with a COS welding step, a SAC mounting area 113 and a small reflector 220 space beam combining mounting area 113, and the tube shell 100 can be directly connected with water or placed on a cold plate (such as a water-cooling plate, TEC, thermal Electronic Cooler, i.e. a semiconductor refrigerator and the like) to realize heat dissipation of the semiconductor laser. After the machining of the semiconductor tube 100 is finished, the tube 100 can be completely plated with nickel after being cleaned, then a shielding fixture (fixture 300) is adopted to be buckled on the tube 100 to be treated, all the tube 100 areas except the COS welding area 110 are shielded, the tube 100 is sent into a magnetron sputtering furnace to carry out local magnetron sputtering silver plating on the COS welding area of the tube 100, the middle part of the shielding fixture (fixture 300) close to the COS welding area 110 is cut into an inclined plane 320, and the deposition of a silver layer in the COS 210 welding area 110 is facilitated during magnetron sputtering.

After the semiconductor shell 100 processed by adopting the high heat conduction material is washed and plated with nickel, an external shielding tool and a middle shielding tool (the tool 300 comprises the external shielding tool and the middle shielding tool) are put into the semiconductor shell 100, and then the semiconductor shell 100 is put into a magnetron sputtering furnace to carry out local silver plating on a COS welding area of the semiconductor shell 100, and after the local silver plating is finished, the tool 300 is taken away, and the local silver plating of the semiconductor shell 100 is finished. Then, the COS 210 is welded to the corresponding welding step of the COS, the beam combining and bonding step of the collimating mirror and the small reflecting mirror 220 is arranged corresponding to each COS 210, the SAC and the small reflecting mirror 220 are arranged on the collimating and small beam combining step (the mounting step part 113a of the mounting area 113), after the COS 210 is collimated by the corresponding FAC and SAC, the spatial beam combining arrangement is realized after the COS 210 is reflected by the small reflecting mirror 220 arranged in a step, and after the beams are combined in a polarization mode by the large reflecting mirror 280 and the PBS 291, the beams are focused into the optical fibers by the coupling lens.

The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the present application, but rather, the present application is intended to cover any variations of the equivalent structures described herein or shown in the drawings, or the direct/indirect application of the present application to other related technical fields.

Claims

1. A laser comprising a package comprising a weld zone for welding a plurality of single-tube laser chips, the weld zone being covered with a coating formed by a target material plated by magnetron sputtering, the target material having a less oxidation resistance than gold.

2. A laser as claimed in claim 1, wherein,

the welding area comprises a first area and a second area, the first area and the second area are arranged at intervals in a first direction, and the first area and the second area extend along a second direction;

3. A laser as claimed in claim 2, wherein,

the tube shell further comprises a mounting area which is positioned between the first area and the second area in the first direction, the laser comprises a plurality of reflectors which are arranged in a one-to-one correspondence with the plurality of single-tube laser chips, and the reflectors are arranged in the mounting area;

4. A laser as claimed in claim 2, wherein,

5. A laser as defined in claim 4, wherein,

each of the mirrors further includes a second side portion perpendicular to the first direction such that a cross section of the mirror taken by a plane defined by the first direction and the second direction is isosceles trapezoid.

6. A laser as claimed in claim 1, wherein,

the welding area comprises a first area and a second area, the first area and the second area are arranged at intervals in a first direction, and the first area and the second area extend along a second direction; the laser comprises a plurality of single-tube laser chips, and the first area and the second area are used for arranging the single-tube laser chips;

7. A laser as claimed in claim 1, wherein,

8. A laser as defined in claim 7, wherein,

9. A method of manufacturing a laser, the laser comprising a package including a weld region for welding a plurality of single-tube laser chips, the method comprising:

shielding the envelope to expose the weld area;

wherein the target material has oxidation resistance weaker than gold.

10. The method of claim 9, wherein the shielding the cartridge to expose the weld area comprises: