CN116564911A - Integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure and integration method - Google Patents

Abstract

The invention relates to the field of chip packaging and thermal management, in particular to a heat dissipation temperature control structure of an integrated working chip/thermoelectric refrigeration chip and an integration method. The structure comprises: a working chip, a first electrode layer, a thermoelectric particle layer, a second electrode layer, a microfluidic chip layer or a heat sink layer. The integration method comprises the following steps: electrode direct growth technology, thermoelectric particle cutting and assembling technology, thermoelectric refrigeration chip welding technology, deep silicon etching technology and femtosecond laser microfluidic processing technology. According to the invention, the thermoelectric refrigeration chip is directly integrated on the working chip, so that the parasitic thermal resistance and the parasitic electrical resistance of the interface are greatly reduced, and the heat dissipation efficiency is greatly improved. Meanwhile, the micro-channel technology is combined, so that the heat dissipation of the hot end of the thermoelectric refrigeration chip is guaranteed, and the heat dissipation performance is further improved. The packaging technology adopted by the invention is easy to realize and compatible with the current semiconductor device manufacturing process, and has great application potential.

Description

Integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure and integration method

technical field

The invention relates to the field of chip packaging and thermal management, in particular to an integrated working chip (computing chip, photoelectric chip, etc.)/thermoelectric cooling chip heat dissipation and temperature control structure and integration method.

Background technique

With the development of the Internet, 5G communications, artificial intelligence, and autonomous driving, the heating power of chips is increasing. Effective cooling of chips is increasingly becoming a problem. Traditional data centers often use water circulation and compressor refrigeration to control temperature. The former increases heat dissipation by increasing the heat exchange coefficient between the chip and water, and the latter increases heat dissipation by reducing the ambient temperature. Both of these methods consume a lot of energy, and thermoelectric refrigeration has attracted widespread attention because of its small size and ability to control temperature in regions. However, due to the incompatibility between the traditional thermoelectric device manufacturing and the semiconductor device manufacturing process, there are many inevitable interface layers when packaging the thermoelectric cooling module, especially when the thickness of the thermoelectric particle layer of the thermoelectric device reaches the micron level, these interface layers will be It brings huge parasitic thermal resistance, which greatly damages the cooling effect. As the heating power of devices reaches the level of kW/ ^cm2 in the future, how to reduce the parasitic thermal resistance becomes a huge challenge.

Contents of the invention

The purpose of the present invention is to provide an integrated working chip (computing chip, photoelectric chip, etc.)/thermoelectric cooling chip heat dissipation temperature control structure and integration method, so as to overcome the problems such as inconspicuous heat dissipation effect and insufficient heat dissipation performance of the existing thermoelectric device assembly method .

In order to solve the problems of the technologies described above, the technical solution adopted in the present invention is:

An integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure, the structure includes: a working chip, a first electrode layer, a thermoelectric particle layer, a second electrode layer, a microfluidic chip layer or a radiator layer, and the specific structure is as follows: The first electrode layer is located on the top of the working chip, and the second electrode layer is located at the bottom of the microfluidic chip layer or the heat sink layer; the thermoelectric particle layer is welded between the first electrode layer and the second electrode layer to form a traditional thermoelectric device in electrical series, thermal Parallel structure.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, the microfluidic chip layer includes a microfluidic chip flow channel layer and a microfluidic chip cover layer, and the microfluidic chip cover layer is installed on the microfluidic chip. On the top of the channel layer of the chip, there are micro-channels on the channel layer of the microfluidic chip. The structure of the micro-channels is a reciprocating parallel structure. And the water outlet hole is used for connecting the water circuit; when in use, a water pump with adjustable power is added to the micro-channel water circuit for water circulation.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, the relative arrangement and electrical connection of the first electrode layer, thermoelectric particle layer and second electrode layer are the arrangement and connection of commercial common thermoelectric devices.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, when the microfluidic chip layer is used, the projected area of the microfluidic chip layer is smaller than the projected area of the working chip; when the radiator layer is used, the radiator layer The projected area is larger than the projected area of the working chip to increase the heat dissipation area.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, the first electrode layer material and the second electrode layer material are selected from a single-layer or more than two-layer film structure composed of highly conductive and thermally conductive metals; the thermoelectric particle layer is a group Bulk or thin film N-type and P-type thermoelectric semiconductor materials.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, the highly conductive and thermally conductive metals are: Ti, Cu, Ni, Au, Cr, Nb or Ag; the thermoelectric semiconductor materials are: Bi ₂ Te ₃ -based alloy materials, GeTe Based alloy material, Mg ₃ Bi ₂ based alloy material, PbTe based alloy material or SiGe based alloy material.

In the heat dissipation and temperature control structure of the integrated working chip/thermoelectric cooling chip, the flow channel layer of the microfluidic chip is made of Si or AlN ceramic or Al ₂ O ₃ ceramic material; correspondingly, the cover layer of the microfluidic chip is made of Si or PDMS Material.

An integrated method for integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure, including: electrode direct growth technology, thermoelectric particle cutting and assembly technology, thermoelectric cooling chip welding technology, microfluidic chip layer or radiator layer processing technology, in:

Using electroplating, magnetron sputtering or electron beam evaporation technology to directly grow the first electrode layer or the second electrode layer on the working chip or the microfluidic chip layer or the radiator layer;

Use femtosecond laser cutting technology, wafer cutting technology or wire cutting technology to cut the thermoelectric particle layer;

Use image recognition technology, patch transfer technology or vacuum adsorption technology to assemble the first electrode layer, thermoelectric particle layer, and second electrode layer;

Use dispensing technology and screen printing technology to prepare patterned alloy solder paste, and weld the thermoelectric particle layer and the first electrode layer or the second electrode layer under a protective atmosphere;

The microfluidic chip layer adopts femtosecond laser etching technology processing and ultraviolet ozone treatment bonding technology or deep silicon etching technology and Si wafer bonding technology, and the radiator layer adopts femtosecond laser processing technology.

In the integration method of the integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure, in the microfluidic chip layer: when the flow channel layer of the microfluidic chip is made of Si material, the flow channel layer of the microfluidic chip is made of deep silicon prepared by etching technology; when the flow channel layer of the microfluidic chip is made of AlN ceramic or Al ₂ O ₃ ceramic material, the flow channel layer of the microfluidic chip is prepared by femtosecond laser etching technology.

In the integration method of the integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure, in the microfluidic chip layer: when the flow channel layer of the microfluidic chip is made of Si material, Si wafer bonding technology is used to make the Si material The cover layer of the microfluidic chip is bonded and sealed with the channel layer of the microfluidic chip; when the channel layer of the microfluidic chip is made of AlN ceramic or Al ₂ O ₃ ceramic material, it is prepared on the channel layer of the microfluidic chip After the SiO ₂ layer, the microfluidic chip cover layer of PDMS material and the flow channel layer of the microfluidic chip are bonded and sealed by using ultraviolet ozone treatment technology.

Design idea of the present invention is:

In order to dissipate heat for the chip, it is necessary to increase the heat dissipation efficiency between the chip and the heat dissipation material. First of all, the present invention adopts active cooling instead of passive heat dissipation, that is, thermoelectric cooling, which can even make the temperature of the chip to be radiated lower than the ambient temperature. At the same time, by adjusting the power of thermoelectric cooling, precise temperature control of the chip can be achieved. Secondly, in order to achieve high-efficiency cooling, the cooling of the hot end of the thermoelectric device cannot be ignored (overheating of the hot end will cause the device to fail to achieve the best cooling state). can greatly increase the heat dissipation efficiency. Most importantly, in the field of thermal management, due to the separate design of the heating chip and heat dissipation, people have to use thermal interface materials. There are inevitably gaps between these materials and the heat dissipation chip, and poor thermal conductors such as air cause heat loss. Accumulated at the interface, the interface will generate severe heat, and the heat of the heating chip cannot be exported. The invention fundamentally eliminates the thermal interface material by directly integrating the heating chip with the thermoelectric device, and the thermoelectric device and the microfluidic chip, and greatly reduces the contact thermal resistance.

Based on the design idea of the above three points, the present invention successfully designed an integrated working chip/thermoelectric cooling chip heat dissipation temperature control structure and integration method to realize precise temperature control of the heating chip and ensure that the chip is at the optimal working temperature .

The technical solution of the present invention has the following advantages and beneficial effects:

1. The invention provides an integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure. By making electrodes on the top of the working chip, the working chip becomes the "substrate" of the miniature thermoelectric cooling chip, which eliminates the traditional thermoelectric cooling chip assembly. A large number of parasitic thermal resistance and resistance at the interface can greatly improve the cooling and heat dissipation effect.

2. In the heat dissipation and temperature control structure of an integrated working chip/thermoelectric cooling chip provided by the present invention, the top substrate can be selected as a high thermal conductivity radiator such as a Si or AlN or Al ₂ O ₃ substrate to adapt to the scene where the heat generation is not large, You can also choose a microfluidic chip to adapt to high calorific value applications. By adjusting the water pressure in the microchannel, the temperature of the top substrate can be precisely controlled. Compared with air convection cooling, its heat exchange coefficient is larger and the heat dissipation effect is better.

3. An integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure provided by the present invention can realize precise temperature control of the working chip by adjusting the power of the cooling chip and the power of the external water pump, combined with the temperature sensor inside the chip .

4. The heat dissipation and temperature control structure of an integrated working chip/thermoelectric cooling chip provided by the present invention adopts a simple process and is compatible with the modern semiconductor processing integration process, and can achieve very good performance without greatly changing the manufacturing process of the working chip. heat radiation.

5. An integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure provided by the present invention has a very mature technology of the thermoelectric cooling chip, which is convenient for integrated packaging and integration.

6. The heat dissipation and temperature control structure of an integrated working chip/thermoelectric cooling chip provided by the present invention does not use any thermal interface materials such as heat-conducting silicone grease, heat-dissipating copper foil, heat-dissipating graphene, and carbon nanotubes, which greatly reduces the cost of different materials. /Device contact interface thermal resistance and resistance, which significantly improves the cooling performance.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the description of the specific implementation or prior art. Obviously, the accompanying drawings in the following description These are some implementations of the present invention, and those skilled in the art can also obtain other drawings based on these drawings without creative work.

Fig. 1 is a side perspective view of an integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure of the present invention;

Fig. 2 is a split schematic diagram of an integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure of the present invention;

Figure 3 is an exploded view of a typical application of an integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure;

Fig. 4 is a typical application assembly cross-sectional view of an integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure;

Reference signs: 1-working chip, 2-first electrode layer, 3-thermoelectric particle layer, 4-second electrode layer, 5-microfluidic chip channel layer, 51-microfluidic channel, 6-microfluidic Chip cover layer, 7-circuit board, 8-packaging board.

Detailed ways

As shown in Figures 1-2, the integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure of the present invention includes: a working chip 1, a first electrode layer 2, a thermoelectric particle layer 3, a second electrode layer 4, micro Fluidic chip layer (microfluidic chip channel layer 5, microfluidic chip cover layer 6) or radiator layer, the specific structure is as follows:

The first electrode layer 2 is located at the top of the working chip 1, and the second electrode layer 4 is located at the bottom of the microfluidic chip layer or the radiator layer. The thermoelectric particle layer 3 is welded between the first electrode layer 2 and the second electrode layer 4 to form a conventional thermoelectric device in electrical series and thermal parallel structure.

The microfluidic chip layer includes a microfluidic chip flow channel layer 5 and a microfluidic chip cover layer 6. The microfluidic chip cover layer 6 is installed on the top of the microfluidic chip flow channel layer 5. The microfluidic chip flow channel Layer 5 is provided with micro-channels 51, and the structure of micro-channels is a reciprocating parallel arrangement structure. There are two through holes on layer 6 of the microfluidic chip cover plate: a water inlet hole and a water outlet hole, which are used for external connection of waterways. When in use, a power-adjustable water pump is added to the water circuit of the micro-channel 51 for water circulation.

Among them, the thermoelectric particle layer 3 is N-type and P-type thermoelectric semiconductor materials (thin-film thermoelectric semiconductor materials or bulk thermoelectric semiconductor materials), including GeSi-based alloys, GeTe-based alloys, Bi ₂ Te ₃ -based alloys or Mg ₃ Bi _2- based alloys wait. The material of the first electrode layer 2 and the material of the second electrode layer 4 can be selected as a single-layer or more than two-layer film structure composed of Ti, Cu, Ni, Au, Cr, Nb, Ag and other highly conductive and thermally conductive metals. The spatial arrangement and electrical connection of the first electrode layer, the thermoelectric particle layer and the second electrode layer are the same as those of commercial bulk thermoelectric devices. The channel layer 5 of the microfluidic chip is made of Si or SiN material or Al ₂ O ₃ material, and the cover layer 6 of the microfluidic chip is made of Si or polydimethylsiloxane (PDMS) material. The heat sink layer can be Si material, AlN ceramic material, Al ₂ O ₃ ceramic and other high thermal conductivity materials.

In the specific implementation process, the integration method of the integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure of the present invention includes: electrode direct growth technology, thermoelectric particle cutting and assembly technology, thermoelectric cooling chip welding technology, deep silicon etching technology, flying Second laser microfluidic processing technology, the specific steps are as follows:

(1) Preparation of microfluidic chip: use femtosecond laser etching technology to etch Al ₂ O ₃ ceramics or AlN ceramics to prepare microchannels, or use deep silicon etching technology to etch Si microchannels. After physically depositing about 20-500nm SiO ₂ on the microchannel layer Al ₂ O ₃ or AlN, the PDMS is treated with ultraviolet ozone treatment technology, and the PDMS and Al ₂ O ₃ or AlN are aligned and pressurized to realize PDMS and Al ₂ O ₃ Or chemical bonding of AlN; or use Si wafer bonding technology to directly bond the Si cover plate and the Si microchannel layer.

(2) Electrode direct growth: Electroplating, magnetron sputtering or electron beam evaporation are used to directly grow patterned electrodes on the non-microchannel surface of the microchannel layer and one side of the working chip.

(3) Cutting and assembly of thermoelectric particles: use dispensing or screen printing to prepare alloy solder paste (such as: AuSn, SnSb or SnBi, etc.) A pyroelectric particle layer is assembled on the first electrode layer.

(4) Thermoelectric cooling chip welding: use image recognition and patch technology to assemble the second electrode layer of the microfluidic layer and the top of the thermoelectric particle layer, and weld them in a protective atmosphere (such as nitrogen, argon or helium, etc.) Furnace soldering with soldering parameters corresponding to the alloy solder paste used.

The following examples are in order to further understand the present invention better, are not limited to the best implementation mode, and do not limit the content and protection scope of the present invention. Any product identical or similar to the present invention obtained by combining features of other prior art falls within the protection scope of the present invention.

If no specific steps or conditions are specified in the examples, it can be carried out according to the routine test steps or conditions described in the literature in this field. The manufacturers of the reagents or instruments used were not indicated, and they were all commercially available conventional reagent products.

Example 1

As shown in Figures 1 to 4, this embodiment is a typical application of the integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure, including: working chip 1, first electrode layer 2, thermoelectric particle layer 3, second The electrode layer 4, the microfluidic chip flow channel layer 5, the microfluidic chip cover layer 6, the circuit board 7 and the packaging board 8, the working chip 1 is electrically connected to the circuit board 7 through a soldering process, and the first electrode layer 2 It is directly fabricated on the top of the working chip 1, and the second electrode layer 4 is directly fabricated on the bottom of the channel layer 5 of the microfluidic chip. The thermoelectric particle layer 3 is welded between the first electrode layer 2 and the second electrode layer 4 by a welding process to form a traditional thermoelectric device electrically connected in series and thermally connected in parallel. The packaging board 8 and the circuit board 7 are set up and down opposite to each other, and the packaging board 8 is bonded and sealed with the circuit board 7 through the sealant. 5, the microfluidic chip cover layer 6 is installed on the top of the microfluidic chip channel layer 5 to form a microfluidic chip layer. Among them, the working chip 1, the first electrode layer 2, the thermoelectric particle layer 3, the second electrode layer 4, the flow channel layer 5 of the microfluidic chip, and the cover layer 6 of the microfluidic chip are all located in the window of the packaging board 8, and the packaging The sealed area between the plate 8 and the circuit board 7 can be air, argon, nitrogen or helium. The channel layer 5 of the microfluidic chip is provided with a micro channel 51 for passing cooling water to increase the heat dissipation effect. Wherein, the micro-channel 51 is a reciprocating parallel arrangement structure, and its size is: the cross-sectional width of the micro-channel is 10 μm-500 μm, and the cross-sectional height of the micro-channel is 20 μm-1 mm. There are two through holes on the cover plate layer 6 of the microfluidic chip: a water inlet hole and a water outlet hole, which are used for externally connecting waterways. In actual use, it is necessary to add a water pump with adjustable power in the microchannel water circuit for water circulation.

In this embodiment, the thermoelectric particle layer 3 adopts N-type Bi ₂ Te ₃ bulk material and P-type Bi _1.5 Sb _0.5 Te ₃ bulk material, and their specific dimensions are: length 200 μm, width 200 μm, height 200 μm; the first electrode The layer 2 is made of Au material, the second electrode layer 4 is made of Au material, the channel layer 5 of the microfluidic chip is made of Si material, and the cover plate layer 6 of the microfluidic chip is made of Si material.

The principle of use of this embodiment is roughly as follows:

When the refrigeration structure of this embodiment is working, the working chip 1 emits a large amount of heat, and a voltage is applied to both ends of the second electrode layer 4. Due to the Peltier effect of the thermoelectric material, the heat is transported to the channel layer 5 of the microfluidic chip. However, the liquid in the micro-channels in the channel layer 5 of the micro-fluidic chip absorbs heat due to its low temperature and is pumped away by the water pump, thereby achieving high-efficiency cooling of the working chip 1 . Moreover, by adjusting the magnitude of the applied voltage and the power of the water pump, the actual temperature of the chip can be adjusted, thereby realizing precise temperature control of the chip.

The results show that the invention greatly reduces the parasitic thermal resistance and resistance of the interface by directly integrating the thermoelectric cooling chip on the working chip, and greatly improves the heat dissipation efficiency. At the same time, combined with micro-channel technology, it ensures the heat dissipation of the hot end of the thermoelectric cooling chip, further improving the heat dissipation performance. The packaging technology adopted in the present invention is relatively easy to realize and is compatible with the current semiconductor device manufacturing process, and has great application potential.

Apparently, the above-mentioned embodiments are only examples for clearly illustrating, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, the obvious changes or changes derived therefrom are still within the scope of protection of the present invention.

Claims (10)

1. An integrated working chip/thermoelectric refrigeration chip heat dissipation temperature control structure, characterized in that the structure comprises: the working chip, the first electrode layer, the thermoelectric particle layer, the second electrode layer, the microfluidic chip layer or the radiator layer has the following specific structure: the first electrode layer is positioned at the top of the working chip, and the second electrode layer is positioned at the bottom of the microfluidic chip layer or the radiator layer; the thermoelectric particle layer is welded between the first electrode layer and the second electrode layer to form a traditional thermoelectric device electric series connection and thermal parallel connection structure.

2. The integrated working chip/thermoelectric refrigeration chip heat dissipation temperature control structure according to claim 1, wherein the microfluidic chip layer comprises a microfluidic chip flow channel layer and a microfluidic chip cover plate layer, the microfluidic chip cover plate layer is arranged at the top of the microfluidic chip flow channel layer, a micro flow channel is arranged on the microfluidic chip flow channel layer, the micro flow channel structure is of a reciprocating parallel arrangement type structure, and two through holes are formed in the microfluidic chip cover plate layer: the water inlet hole and the water outlet hole are used for externally connecting a waterway; when the micro-channel water pump is used, a power-adjustable water pump is added into the micro-channel water channel for water circulation.

3. The integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure according to claim 1, wherein the first electrode layer, the thermoelectric particle layer, and the second electrode layer are arranged in a relative manner and electrically connected in a manner that common thermoelectric devices are arranged and connected in a commercial manner.

4. The integrated working chip/thermoelectric refrigeration chip heat dissipation temperature control structure according to claim 1, wherein when a microfluidic chip layer is adopted, the projected area of the microfluidic chip layer is smaller than the projected area of the working chip; when the radiator layer is adopted, the projection area of the radiator layer is larger than that of the working chip, so that the heat dissipation area is increased.

5. The heat dissipation and temperature control structure of an integrated working chip/thermoelectric refrigeration chip according to claim 1, wherein the first electrode layer material and the second electrode layer material are single-layer or more than two-layer film structures formed by high-electric-conductivity and high-heat-conductivity metals; the thermoelectric particle layer is a group of bulk or thin film N-type and P-type thermoelectric semiconductor materials.

6. The integrated working chip/thermoelectric refrigeration chip heat dissipation and temperature control structure as set forth in claim 5, wherein the highly electrically and thermally conductive metal is: ti, cu, ni, au, cr, nb or Ag; the thermoelectric semiconductor material is as follows: bi (Bi) ₂ Te ₃ Base alloy material, geTe base alloy material, mg ₃ Bi ₂ A base alloy material, a PbTe base alloy material, or a SiGe base alloy material.

7. The integrated working chip/thermoelectric cooling chip heat dissipation and temperature control structure according to claim 2, wherein the micro-fluidic chip runner layer adopts Si or AlN ceramics or Al ₂ O ₃ A ceramic material; correspondingly, the cover plate layer of the micro-fluidic chip adopts Si or PDMS material.

8. An integration method using the integrated working chip/thermoelectric cooling chip heat dissipation temperature control structure as claimed in any one of claims 1 to 7, comprising: electrode direct growth technology, thermoelectric particle cutting and assembling technology, thermoelectric refrigeration chip welding technology, microfluidic chip layer or radiator layer processing technology, wherein:

directly growing a first electrode layer or a second electrode layer on the working chip or the microfluidic chip layer or the radiator layer by adopting electroplating, magnetron sputtering or electron beam evaporation technology;

cutting the thermoelectric particle layer by using a femtosecond laser cutting technology, a wafer cutting technology or a wire cutting technology;

assembling the first electrode layer, the thermoelectric particle layer and the second electrode layer by using an image recognition technology, a patch transfer technology or a vacuum adsorption technology;

preparing patterned alloy soldering paste by using a dispensing technology and a screen printing technology, and welding a thermoelectric particle layer and a first electrode layer or a second electrode layer under a protective atmosphere;

the micro-fluidic chip layer is processed by a femtosecond laser etching technology, an ultraviolet ozone treatment bonding technology or a deep silicon etching technology and a Si wafer bonding technology, and the radiator layer is processed by a femtosecond laser processing technology.

9. The method for integrating a heat dissipation and temperature control structure of an integrated process chip/thermoelectric refrigeration chip as recited in claim 8, wherein in the microfluidic chip layer: when the micro-fluidic chip runner layer is made of Si material, the micro-fluidic chip runner layer is prepared by adopting a deep silicon etching technology; when the flow channel layer of the microfluidic chip is AlN ceramic or Al ₂ O ₃ When the ceramic material is used, the flow channel layer of the microfluidic chip is prepared by adopting a femtosecond laser etching technology.

10. The method for integrating the heat dissipation and temperature control structure of the integrated working chip/thermoelectric refrigeration chip as claimed in claim 9, wherein the microfluidic chip layer comprises the following steps: when the microfluidic chip runner layer is made of Si material, bonding and sealing the microfluidic chip cover plate layer made of Si material and the microfluidic chip runner layer by adopting a Si wafer bonding technology; when the flow channel layer of the microfluidic chip is AlN ceramic or Al ₂ O ₃ When ceramic material is used, siO is prepared on the flow channel layer of the micro-fluidic chip ₂ After the lamination, the micro-fluidic chip cover plate layer of PDMS material and the micro-fluidic chip runner layer are bonded and sealed by adopting an ultraviolet ozone treatment technology.