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CN116544770A - A packaging structure for a laser - Google Patents

A packaging structure for a laser Download PDF

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Publication number
CN116544770A
CN116544770A CN202210092611.8A CN202210092611A CN116544770A CN 116544770 A CN116544770 A CN 116544770A CN 202210092611 A CN202210092611 A CN 202210092611A CN 116544770 A CN116544770 A CN 116544770A
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Prior art keywords
laser
laser chip
ceramic substrate
lens
substrate
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Chinese (zh)
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雷述宇
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Ningbo Abax Sensing Electronic Technology Co Ltd
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Ningbo Abax Sensing Electronic Technology Co Ltd
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Priority to CN202210092611.8A priority Critical patent/CN116544770A/en
Publication of CN116544770A publication Critical patent/CN116544770A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • H01S5/02345Wire-bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0225Out-coupling of light
    • H01S5/02253Out-coupling of light using lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/0232Lead-frames

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本申请提供一种激光器的封装结构,包括:激光器芯片,用于发出探测光;陶瓷基板,处于所示激光器芯片下方;PCB基板,处于所述陶瓷基板下方;所述激光芯片与所述PCB基板电导通。

The present application provides a packaging structure of a laser, including: a laser chip, used to emit detection light; a ceramic substrate, located below the laser chip; a PCB substrate, located below the ceramic substrate; the laser chip and the PCB substrate Electrical conduction.

Description

一种激光器的封装结构A packaging structure for a laser

技术领域technical field

本申请涉及封装技术领域,尤其是激光器的封装结构。This application relates to the technical field of packaging, especially the packaging structure of lasers.

背景技术Background technique

半导体类型的激光器,由于其出色的可控性能,并且非常容易实现阵列型的集成化设计,被越来越多地利用在各个探测过程中,通过对于电压等特性的控制也能比较方便地实现激光参数的调整,对于整个系统而言是非常有利的,半导体激光器是指以半导体材料为工作物质的激光器,又称半导体激光二极管(LD),是20世纪60年代发展起来的一种激光器。半导体激光器的工作物质有几十种,例如砷化镓(GaAs)、硫化镉(CdS)等,激励方式主要有电注入式、光泵式和高能电子束激励式三种。半导体激光器的优点主要包含以下几个方面:1)体积小、重量轻。2)可注入激励:仅用几伏的电压注入毫安级的电流就能够驱动。除电源装置以外不需要其它的激励设备和部件。电功率直接变换成光功率,能量效率高。3)波长范围宽:适当的选择材料和合金比,在红外和可见光很宽的波长范围内能够实现任意波长的激光器。4)可直接调制:把信号重叠在驱动电流上,在直流到G赫兹范围内,可以调制振荡强度、频率和相位。5)相干性高:用单横模的激光器可以得到空间上相干性高的输出光。在分布反馈型(DFB)和分布布拉格反射型(DBR)激光器中能够得到稳定的单纵模激射,得到时间上的高相干性等等优势。Semiconductor-type lasers, due to their excellent controllability and easy implementation of array-type integrated design, are increasingly used in various detection processes, and can be easily realized through the control of voltage and other characteristics. The adjustment of laser parameters is very beneficial to the whole system. Semiconductor laser refers to the laser with semiconductor material as the working substance, also known as semiconductor laser diode (LD), which is a kind of laser developed in the 1960s. There are dozens of working materials for semiconductor lasers, such as gallium arsenide (GaAs), cadmium sulfide (CdS), etc. The excitation methods mainly include electric injection type, optical pump type and high-energy electron beam excitation type. The advantages of semiconductor lasers mainly include the following aspects: 1) Small size and light weight. 2) Injectable excitation: only a few volts of voltage can be used to inject milliampere-level currents to drive. Apart from the power supply unit, no other excitation equipment and components are required. The electrical power is directly converted into optical power, and the energy efficiency is high. 3) Wide wavelength range: Appropriate selection of materials and alloy ratios can realize lasers with arbitrary wavelengths in a wide wavelength range of infrared and visible light. 4) It can be directly modulated: the signal is superimposed on the driving current, and the oscillation intensity, frequency and phase can be modulated in the range from DC to G Hz. 5) High coherence: output light with high spatial coherence can be obtained by using a single transverse mode laser. In distributed feedback (DFB) and distributed Bragg reflective (DBR) lasers, stable single longitudinal mode lasing can be obtained, and advantages such as high coherence in time can be obtained.

目前应用较多的两种半导体激光器为边缘发射激光器(EEL)与表面发射半导体激光器。边缘发射激光器(EEL)彻底改变了激光系统,并赋予其以新的特殊属性,如小型化、稳定相干光和窄发射波长。在实践中,EEL 可以用作“直接”激光器,但也可以与光纤或晶体耦合以制造光纤激光器或DPSSL。这项先进的激光器技术提供特定的优势,例如更好的光束质量、改善的激光噪声稳定性和更高的功率输出等。Two types of semiconductor lasers that are widely used at present are edge-emitting lasers (EEL) and surface-emitting semiconductor lasers. Edge-emitting lasers (EELs) have revolutionized laser systems and endowed them with new special properties, such as miniaturization, stable coherent light, and narrow emission wavelengths. In practice, EELs can be used as "direct" lasers, but can also be coupled to fibers or crystals to make fiber lasers or DPSSLs. This advanced laser technology offers specific benefits such as better beam quality, improved laser noise stability and higher power output, among others.

表面发射半导体激光器,与传统的边缘发射报道提激光器相比也具有许多的优势,而在表面发射型半导体激光器中垂直腔表面发射激光器 VCSEL(Vertical-CavitySurface-Emitting Lasers)因其本身低阈值、圆形光束、易耦合和易二维集成其同时具有边模抑制比高、阈值低、体积小、易于集成、输出功率高等优点,成为光电子领域研究的热点。例如用于3D成像的结构光源,激光检测和测距(LADAR),飞行时间(TOF)3D成像,航空防御和聚变研究等。垂直腔面发射激光器(VCSEL)由于低功率应用以及高频优势和制造优于其他类型的半导体激光器件而常用于许多半导体激光器应用中。Surface-emitting semiconductor lasers also have many advantages compared with traditional edge-emitting lasers. Among surface-emitting semiconductor lasers, vertical-cavity surface-emitting lasers (VCSELs) have low threshold and round Shaped beam, easy coupling and easy two-dimensional integration. It has the advantages of high side-mode suppression ratio, low threshold, small size, easy integration, high output power, etc., and has become a research hotspot in the field of optoelectronics. Examples include structured light sources for 3D imaging, laser detection and ranging (LADAR), time-of-flight (TOF) 3D imaging, aerospace defense and fusion research, etc. Vertical-cavity surface-emitting lasers (VCSELs) are commonly used in many semiconductor laser applications due to their low power application and high frequency advantages and fabrication advantages over other types of semiconductor laser devices.

在TOF测距过程中需要保证激光器具有可靠的激光输出,然而目前所采用的封装方案,激光器芯片通过焊料或环氧树脂正面安装到封装的基板上。然后可以使用引线键合将激光器芯片连接到外部电路,如此本身的引线之间存在寄生电感,例如在1mm的引线存在1nH的寄生电感,引线端管脚长度3mm,直径0.45mm,根据导线电感计算公式得到管脚产生电感为 1.52nH。这些因素影响着封装结构的可靠性,尤其是TOF测距过程中的可靠性应用,制约了TOF测距的精度。In the process of TOF ranging, it is necessary to ensure that the laser has a reliable laser output. However, in the current packaging scheme, the laser chip is front-mounted on the packaged substrate through solder or epoxy resin. Then you can use wire bonding to connect the laser chip to the external circuit, so that there is a parasitic inductance between the leads itself, for example, there is a parasitic inductance of 1nH in the 1mm lead, the length of the lead end pin is 3mm, and the diameter is 0.45mm, calculated according to the lead inductance According to the formula, the inductance generated by the pin is 1.52nH. These factors affect the reliability of the packaging structure, especially the reliability application in the TOF ranging process, which restricts the accuracy of TOF ranging.

因此开发一种能够消除现有技术的引线和管脚所产生的寄生电感的激光器封装结构和封装方法,并将其使用在TOF测距系统中实现高精度测量是亟待解决的问题。Therefore, it is an urgent problem to develop a laser packaging structure and packaging method that can eliminate the parasitic inductance generated by the leads and pins of the prior art, and to use it in the TOF ranging system to achieve high-precision measurement.

发明内容Contents of the invention

本申请的目的在于,针对上述现有技术中的不足,提供一种激光器的封装结构以便消除或者部分消除激光器封装中引线与管脚引起的电感,提高激光器的性能,进而提高测距精度。The purpose of the present application is to provide a laser packaging structure to eliminate or partially eliminate the inductance caused by the leads and pins in the laser package, improve the performance of the laser, and then improve the ranging accuracy.

为实现上述目的,本申请实施例采用的技术方案如下:In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

本申请提供一种激光器的封装结构,其特征在于,包括:The present application provides a laser packaging structure, which is characterized in that it includes:

激光器芯片,用于发出探测光;A laser chip for emitting probe light;

陶瓷基板,处于所示激光器芯片下方;Ceramic substrate, under the laser chip shown;

PCB基板,处于所述陶瓷基板下放;所述激光芯片与所述PCB基本电导通。The PCB substrate is placed under the ceramic substrate; the laser chip is basically electrically connected to the PCB.

可选的,所述陶瓷基板上设有镀金层与金属通孔。Optionally, a gold-plated layer and metal through holes are provided on the ceramic substrate.

可选的,还包括引线,所述引线通过所述陶瓷基板上的镀金层与金属通孔将所述激光芯片与所述PCB基板电导通。Optionally, lead wires are also included, and the lead wires are electrically connected to the laser chip and the PCB substrate through the gold-plated layer and metal through holes on the ceramic substrate.

可选的,还包括反射镜与透镜,所述激光芯片发出的探测光经过所述反射镜反射后再经过所述透镜发射出。Optionally, a reflection mirror and a lens are also included, and the detection light emitted by the laser chip is reflected by the reflection mirror and then emitted through the lens.

可选的,所述所述激光器芯片与所述PCB基板通过所述镀金层以及金属通孔贴面实现电导通。Optionally, the laser chip is electrically connected to the PCB substrate through the gold-plated layer and the metal through-hole veneer.

可选的,还包括透镜与微透镜,所示激光器芯片发射的光经过微透镜准直后再经过透镜发射出。Optionally, a lens and a micro-lens are also included, and the light emitted by the laser chip is collimated by the micro-lens and then emitted through the lens.

可选的,其特征在于,所述PCB基板分成正负电极两个部分。Optionally, it is characterized in that the PCB substrate is divided into two parts, positive and negative electrodes.

本申请的有益效果是:The beneficial effect of this application is:

本申请提供一种激光器的封装结构,其特征在于,包括:The present application provides a laser packaging structure, which is characterized in that it includes:

激光器芯片,用于发出探测光;A laser chip for emitting probe light;

陶瓷基板,处于所示激光器芯片下方;Ceramic substrate, under the laser chip shown;

PCB基板,处于所述陶瓷基板下放;所述激光芯片与所述PCB基本电导通,通过如此设计可以消除或者部分消除激光器封装中引线与管脚引起的电感,提高激光器的性能,进而提高测距精度。The PCB substrate is placed under the ceramic substrate; the laser chip is basically electrically connected to the PCB. Through such a design, the inductance caused by the leads and pins in the laser package can be eliminated or partially eliminated, and the performance of the laser can be improved, thereby improving distance measurement. precision.

附图说明Description of drawings

为了更清楚地说明本申请实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。In order to more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings that are required in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present application, and thus It should be regarded as a limitation on the scope, and those skilled in the art can also obtain other related drawings based on these drawings without creative work.

图1a为现有技术中提供的一种激光器的封装结构的俯视示意图;Fig. 1a is a schematic top view of a package structure of a laser provided in the prior art;

图1b为现有技术中提供的一种激光器的封装结构的俯视切面示意图;FIG. 1b is a schematic top view of a package structure of a laser provided in the prior art;

图2为本申请实施例提供的一种边缘发射的激光器示意图;FIG. 2 is a schematic diagram of an edge-emitting laser provided in an embodiment of the present application;

图3为本申请实施例提供的一种边缘发射的激光器的封装示意图;FIG. 3 is a schematic packaging diagram of an edge-emitting laser provided in an embodiment of the present application;

图4为本申请实施例提供的一种陶瓷基板的示意图;FIG. 4 is a schematic diagram of a ceramic substrate provided in an embodiment of the present application;

图5为本申请实施例提供的一种垂直腔体发射的激光器的封装示意图;FIG. 5 is a schematic packaging diagram of a laser emitted by a vertical cavity provided in an embodiment of the present application;

图6为本申请实施例提供的一种陶瓷基板贴在PCB基板上俯视图的示意图;6 is a schematic diagram of a top view of a ceramic substrate attached to a PCB substrate provided by an embodiment of the present application;

图7为本申请实施例提供的一种陶瓷基板贴在PCB基板上截面图的示意图。FIG. 7 is a schematic diagram of a cross-sectional view of a ceramic substrate attached to a PCB substrate according to an embodiment of the present application.

具体实施方式Detailed ways

为使本申请实施例的目的、技术方案和优点更加清楚,下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本申请一部分实施例,而不是全部的实施例。通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

因此,以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围,而是仅仅表示本申请的选定实施例。基于本申请中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.

图1a为现有技术中提供的一种激光器的封装结构的俯视示意图;如图1 所示,包括,引线101,激光器芯片102,陶瓷基板103,PCB基板104以及管脚105。其中陶瓷基板103处于PCB基板104上方,激光器芯片102 处于陶瓷基板103上方,引线101的一端与PCB基板104的管脚相连接,另外一端与激光器芯片102相连接,通过引线101将激光器芯片102与PCB 基板上的电路连通。如图1所示的封装结构在芯片绑线中主要是芯片到管脚上的引线线有4根,长度约为2mm,按照理论计算电感值1根2nH,4 根并联引线的电感为1/4*2nH=0.5nH。打线端管脚长度3mm,直径0.45mm,根据导线电感计算公式得到管脚产生电感为1.52nH。焊接端按照2mm长度计算电感为0.85nH。由于没有补偿设计总电感量为:1.52nH+0.85nH+ 0.5nH=2.87nH。导致的脉冲上升时间为:FIG. 1a is a schematic top view of a laser package structure provided in the prior art; as shown in FIG. Wherein the ceramic substrate 103 is above the PCB substrate 104, the laser chip 102 is above the ceramic substrate 103, one end of the lead 101 is connected with the pin of the PCB substrate 104, and the other end is connected with the laser chip 102, and the laser chip 102 is connected to the laser chip 102 by the lead 101. Circuit connectivity on the PCB substrate. In the package structure shown in Figure 1, there are mainly 4 lead wires from the chip to the pins in the chip bonding wire, and the length is about 2mm. According to the theoretical calculation, the inductance value of 1 wire is 2nH, and the inductance of 4 parallel wires is 1/ 4*2nH=0.5nH. The pin length of the wire-bonding end is 3mm, and the diameter is 0.45mm. According to the calculation formula of the wire inductance, the inductance generated by the pin is 1.52nH. The inductance of the welding end is 0.85nH based on the length of 2mm. Since there is no compensation design, the total inductance is: 1.52nH+0.85nH+0.5nH=2.87nH. The resulting pulse rise time is:

t=L*di/dU=2.87nH*6A/8V=2.15ns。该上升沿时间将影响激光器的精度,进而影响TOF测距的精度。t=L*di/dU=2.87nH*6A/8V=2.15ns. The rising edge time will affect the accuracy of the laser, and then affect the accuracy of TOF distance measurement.

图1b为现有技术中提供的一种激光器的封装结构的俯视切面示意图。图 1b和图1a类似,只不过为封装结构的切面图,同样包括,引线201,激光器芯片202,陶瓷基板203,PCB基板204以及管脚205。从图1b可以清楚的看出4根引线。其引起的电感和图1a所示类似,这里就不再赘述。Fig. 1b is a schematic top view of a package structure of a laser provided in the prior art. FIG. 1b is similar to FIG. 1a, except that it is a cross-sectional view of the package structure, which also includes leads 201, laser chip 202, ceramic substrate 203, PCB substrate 204 and pins 205. Can clearly see 4 lead wires from Fig. 1b. The inductance caused by it is similar to that shown in Figure 1a, and will not be repeated here.

图2为本申请实施例提供的一种边缘发射的激光器示意图;如图2所示,包括PCB基本301,陶瓷基板302,激光器芯片303,透镜支架304,透镜 305以及反射镜306。其中陶瓷基板302处于PCB基板301上方,激光器芯片303处于陶瓷基板302上方,透镜305安置在透镜支架304上。从图2 可以看出激光器芯片303发出的光经过反射镜306反射以后再经过透镜发射出去,在现有技术中图2所示的边缘发射激光器采用的封装方法为图1a-1b所示的实施例。其中由于引线与管脚产生的电感是亟需解决的技术问题。FIG. 2 is a schematic diagram of an edge-emitting laser provided by an embodiment of the present application; as shown in FIG. 2 , it includes a PCB base 301, a ceramic substrate 302, a laser chip 303, a lens holder 304, a lens 305, and a mirror 306. The ceramic substrate 302 is above the PCB substrate 301 , the laser chip 303 is above the ceramic substrate 302 , and the lens 305 is placed on the lens holder 304 . It can be seen from FIG. 2 that the light emitted by the laser chip 303 is reflected by the mirror 306 and then emitted through the lens. In the prior art, the packaging method used by the edge-emitting laser shown in FIG. 2 is the implementation shown in FIGS. 1a-1b example. Among them, the inductance generated by the leads and pins is a technical problem that needs to be solved urgently.

图3为本申请实施例提供的一种边缘发射的激光器的封装示意图。如图 3所示包括引线401,激光器芯片402,陶瓷基板403,PCB基板404以及反射镜405。其中激光芯片发射出的光经过反射镜反射以后到达透镜再发射出去,其原理与图2所示的实施列相同。从图3的封装方式可以看出,金线直接从激光器芯片连接到PCB基板上,实现激光器芯片与PCB基板上电路的导通。这样就不用专门的管脚,可以消除管脚产生的电感。如图3所示的封装方式只有引线产生的电感,可以将电感减小到0.5nh以下,提高激光器的性能,进而提高测距精度。FIG. 3 is a schematic diagram of packaging of an edge-emitting laser provided by an embodiment of the present application. As shown in FIG. 3 , it includes a lead wire 401, a laser chip 402, a ceramic substrate 403, a PCB substrate 404 and a mirror 405. The light emitted by the laser chip is reflected by the mirror and reaches the lens before being emitted. The principle is the same as that of the embodiment shown in FIG. 2 . It can be seen from the packaging method in Figure 3 that the gold wire is directly connected from the laser chip to the PCB substrate to realize the conduction between the laser chip and the circuit on the PCB substrate. In this way, there is no need for special pins, and the inductance generated by the pins can be eliminated. The packaging method shown in Figure 3 only has the inductance generated by the leads, which can reduce the inductance to less than 0.5nh, improve the performance of the laser, and further improve the distance measurement accuracy.

在图3所示的封装方式中因为陶瓷基板是绝缘的,其中激光器芯片放在陶瓷基板上,陶瓷基本处于PCB基板上,所以如果对陶瓷基板做进一步处理才能实现阴性从激光器芯片到PCB基本的导通。图4为本申请实施例提供的一种陶瓷基板的示意图,如图所示陶瓷基板包括镀金层502,金属通孔 503,其中激光器芯片401处于陶瓷基本之上。通过图4所示的镀金层和金属通孔就可以实现激光器芯片与PCB基板上电路的导通,解决了陶瓷基板绝缘的问题。In the packaging method shown in Figure 3, because the ceramic substrate is insulated, the laser chip is placed on the ceramic substrate, and the ceramic is basically on the PCB substrate, so if the ceramic substrate is further processed, the negative connection from the laser chip to the PCB can be realized. conduction. Fig. 4 is a schematic diagram of a ceramic substrate provided by the embodiment of the present application. As shown in the figure, the ceramic substrate includes a gold-plated layer 502 and metal through holes 503, wherein the laser chip 401 is on the ceramic substrate. The conduction between the laser chip and the circuit on the PCB substrate can be realized through the gold-plated layer and the metal through hole shown in Figure 4, which solves the problem of insulation of the ceramic substrate.

图5为本申请实施例提供的一种垂直腔体发射的激光器的封装示意图,如图5所示包括陶瓷基板601,激光器芯片602,微透镜603以及透镜604。激光器芯片601通过陶瓷基本与PCB电连接。激光器芯片602发射出的光经过微透镜603光路准直以后再讲过透镜604束收以后发射出去。图6为本申请实施例提供的一种陶瓷基板贴在PCB基板上俯视图的示意图;如图6所示包括陶瓷基板701与PCB基板702。图7为本申请实施例提供的一种陶瓷基板贴在PCB基板上截面图的示意图。如图7所示包括 PCB基板801,陶瓷基板802,激光器芯片803。其中激光器芯片803贴在陶瓷基板802上,陶瓷基板802贴在PCB基板801上。其中陶瓷基板802上设置有通孔和镀金层通过贴面实现激光器芯片803与PCB基板801的电导通。在图7所示的实施例中PCB基板801分成正负电极两部分。图7所示的封装方式中,不需要引线也不需要管脚,可以消除因为引线与光脚引入的电感,从而提高激光器的性能进而提高测距精度。FIG. 5 is a schematic diagram of a package of a laser emitted by a vertical cavity according to an embodiment of the present application. As shown in FIG. 5 , it includes a ceramic substrate 601 , a laser chip 602 , a microlens 603 and a lens 604 . The laser chip 601 is substantially electrically connected to the PCB through the ceramic. The light emitted by the laser chip 602 is collimated through the optical path of the microlens 603 and then transmitted out after being collected by the lens 604 . FIG. 6 is a schematic diagram of a top view of a ceramic substrate attached to a PCB substrate according to an embodiment of the present application; as shown in FIG. 6 , a ceramic substrate 701 and a PCB substrate 702 are included. FIG. 7 is a schematic diagram of a cross-sectional view of a ceramic substrate attached to a PCB substrate according to an embodiment of the present application. As shown in FIG. 7 , it includes a PCB substrate 801, a ceramic substrate 802, and a laser chip 803. The laser chip 803 is attached to the ceramic substrate 802 , and the ceramic substrate 802 is attached to the PCB substrate 801 . The ceramic substrate 802 is provided with through holes and a gold-plated layer to achieve electrical conduction between the laser chip 803 and the PCB substrate 801 through the veneer. In the embodiment shown in FIG. 7 , the PCB substrate 801 is divided into positive and negative electrodes. In the packaging method shown in Figure 7, no leads or pins are required, which can eliminate the inductance introduced by the leads and bare feet, thereby improving the performance of the laser and improving the ranging accuracy.

在上述的实施例中,通过测试发现激光器的工作平均功率为0.78mW,发光效率50%计算。产生热量为0.78mW。其中陶瓷基板引起的升温如公式(1)所示,PCB基板引起的升温如公式(21)所示:In the above-mentioned embodiment, it is found through testing that the working average power of the laser is 0.78 mW, and the luminous efficiency is calculated as 50%. The heat generated is 0.78mW. Among them, the temperature rise caused by the ceramic substrate is shown in formula (1), and the temperature rise caused by the PCB substrate is shown in formula (21):

总温升ΔT=0.78mW×(0.068+21.9)K/W=0.017K(3)Total temperature rise ΔT=0.78mW×(0.068+21.9)K/W=0.017K(3)

从公式(3)可以看出上述实施例的封装方式不会引起很高的升温,可以保证激光器芯片的正常工作。It can be seen from the formula (3) that the packaging method of the above embodiment will not cause a high temperature rise, which can ensure the normal operation of the laser chip.

需要说明的是,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。It should be noted that the term "comprising", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article or apparatus comprising a set of elements includes not only those elements, but also includes none other elements specifically listed, or also include elements inherent in such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.

以上所述仅为本申请的优选实施例而已,并不用于限制本申请,对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。以上所述仅为本申请的优选实施例而已,并不用于限制本申请,对于本领域的技术人员来说,本申请可以有各种更改和变化。凡在本申请的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本申请的保护范围之内。The above descriptions are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, there may be various modifications and changes in the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included within the protection scope of this application. It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures. The above descriptions are only preferred embodiments of the present application, and are not intended to limit the present application. For those skilled in the art, there may be various modifications and changes in the present application. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of this application shall be included within the protection scope of this application.

Claims (7)

1.一种激光器的封装结构,其特征在于,包括:1. A packaging structure of a laser, characterized in that, comprising: 激光器芯片,用于发出探测光;A laser chip for emitting probe light; 陶瓷基板,处于所示激光器芯片下方;Ceramic substrate, under the laser chip shown; PCB基板,处于所述陶瓷基板下放;所述激光芯片与所述PCB基本电导通。The PCB substrate is placed under the ceramic substrate; the laser chip is basically electrically connected to the PCB. 2.如权利要求1所述的激光器封装结构,其特征在于,所述陶瓷基板上设有镀金层与金属通孔。2 . The laser package structure according to claim 1 , wherein a gold-plated layer and metal through holes are provided on the ceramic substrate. 3 . 3.如权利要求2所述的激光器封装结构,其特征在于,还包括引线,所述引线通过所述陶瓷基板上的镀金层与金属通孔将所述激光芯片与所述PCB基板电导通。3 . The laser package structure according to claim 2 , further comprising leads, the leads electrically conducting the laser chip with the PCB substrate through the gold-plated layer and metal through holes on the ceramic substrate. 4 . 4.如权利要求1所述的激光器封装结构,其特征在于,还包括反射镜与透镜,所述激光芯片发出的探测光经过所述反射镜反射后再经过所述透镜发射出。4 . The laser package structure according to claim 1 , further comprising a reflector and a lens, and the detection light emitted by the laser chip is reflected by the reflector and then emitted through the lens. 5.如权利要求2所述的激光器封装结构,其特征在于,所述所述激光器芯片与所述PCB基板通过所述镀金层以及金属通孔贴面实现电导通。5 . The laser package structure according to claim 2 , wherein the laser chip is electrically connected to the PCB substrate through the gold-plated layer and metal through-hole bonding. 5 . 6.如权利要求5所述的激光器封装结构,其特征在于,还包括透镜与微透镜,所示激光器芯片发射的光经过微透镜准直后再经过透镜发射出。6 . The laser packaging structure according to claim 5 , further comprising a lens and a micro lens, the light emitted by the laser chip is collimated by the micro lens and then emitted through the lens. 7.如权利要求5所述的激光器封装结构,其特征在于,所述PCB基板分成正负电极两个部分。7. The laser packaging structure according to claim 5, wherein the PCB substrate is divided into two parts, positive and negative electrodes.
CN202210092611.8A 2022-01-26 2022-01-26 A packaging structure for a laser Pending CN116544770A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040264884A1 (en) * 2003-06-30 2004-12-30 Yue Liu Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
JP2005285673A (en) * 2004-03-30 2005-10-13 Mitsui Mining & Smelting Co Ltd Silver paste
US20110266569A1 (en) * 2010-04-30 2011-11-03 Philips Lumileds Lighting Company, Llc Led wafer with laminated phosphor layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040264884A1 (en) * 2003-06-30 2004-12-30 Yue Liu Compact package design for vertical cavity surface emitting laser array to optical fiber cable connection
JP2005285673A (en) * 2004-03-30 2005-10-13 Mitsui Mining & Smelting Co Ltd Silver paste
US20110266569A1 (en) * 2010-04-30 2011-11-03 Philips Lumileds Lighting Company, Llc Led wafer with laminated phosphor layer

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