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CN116544401A - A kind of silicon anode material and its production system, production method and application - Google Patents

A kind of silicon anode material and its production system, production method and application Download PDF

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CN116544401A
CN116544401A CN202310529638.3A CN202310529638A CN116544401A CN 116544401 A CN116544401 A CN 116544401A CN 202310529638 A CN202310529638 A CN 202310529638A CN 116544401 A CN116544401 A CN 116544401A
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silicon oxide
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吕鹏鹏
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/38Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386Silicon or alloys based on silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/05Accumulators with non-aqueous electrolyte
    • H01M10/052Li-accumulators
    • H01M10/0525Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
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    • H01M4/364Composites as mixtures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M4/36Selection of substances as active materials, active masses, active liquids
    • H01M4/58Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
    • H01M4/583Carbonaceous material, e.g. graphite-intercalation compounds or CFx
    • H01M4/587Carbonaceous material, e.g. graphite-intercalation compounds or CFx for inserting or intercalating light metals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00Electrodes
    • H01M4/02Electrodes composed of, or comprising, active material
    • H01M2004/026Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027Negative electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

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Abstract

The invention provides a silicon negative electrode material and a production system, a production method and application thereof, wherein the production system sequentially comprises a silicon oxide reaction generation unit, a fluidization crushing unit and a fluidization coating unit, and respectively realizes high-temperature vacuum evaporation, fluidization jet milling and fluidized bed chemical deposition, namely, the silicon oxide raw material is subjected to vacuum evaporation process to prepare massive silicon oxide, and is subjected to fluidization jet milling and screening, and then is subjected to gas phase carbon coating treatment in a fluidization state, so that the high-performance silicon negative electrode material is produced.

Description

一种硅负极材料及其生产系统、生产方法与应用A kind of silicon anode material and its production system, production method and application

技术领域technical field

本发明属于电极材料制造领域,涉及一种硅负极材料及其生产系统、生产方法与应用。The invention belongs to the field of electrode material manufacturing, and relates to a silicon negative electrode material and its production system, production method and application.

背景技术Background technique

随着消费电子和电动汽车的快速发展,锂离子电池技术得到了长足的发展。高比能锂离子电池是发展的重点,其中锂离子电池中决定能量密度的关键材料为负极材料。With the rapid development of consumer electronics and electric vehicles, lithium-ion battery technology has been greatly developed. High specific energy lithium-ion batteries are the focus of development, and the key material that determines the energy density in lithium-ion batteries is the negative electrode material.

目前,商业化负极材料主要是人造/天然石墨。其中,石墨的理论比容量为372mAh/g,已经不能满足高能量密度电池的需要。而研究人员发现硅负极理论比容量约为4200mAh/g,是石墨负极的10倍以上,且不存在析锂隐患,故其安全性好于石墨类负极材料,而且具有储量丰富,成本低廉的优势,是最具潜力的下一代锂电池负极材料。At present, commercial anode materials are mainly artificial/natural graphite. Among them, the theoretical specific capacity of graphite is 372mAh/g, which cannot meet the needs of high energy density batteries. The researchers found that the theoretical specific capacity of the silicon negative electrode is about 4200mAh/g, which is more than 10 times that of the graphite negative electrode, and there is no hidden danger of lithium precipitation, so its safety is better than that of graphite-based negative electrode materials, and it has the advantages of abundant reserves and low cost. , is the most potential next-generation lithium battery anode material.

但是,硅在充放电过程中存在巨大的体积变化,且电子导电能力极差,严重影响了硅基负极的循环性能和大电流充放电能力。氧化硅基复合材料是近年来颇受关注的新型负极材料。氧化硅基负极材料在首次嵌锂过程中形成的非活性相Li2O和Li4SiO4可以防止活性相纳米Si颗粒的团聚,同时还可以有效缓冲Si在充放电过程中的体积效应,获得良好的循环性能。因此氧化硅基复合电极材料得到了广泛的关注和发展。However, silicon has a huge volume change during charge and discharge, and its electronic conductivity is extremely poor, which seriously affects the cycle performance and high current charge and discharge capability of silicon-based anodes. Silicon oxide-based composite materials are new anode materials that have attracted much attention in recent years. The inactive phases Li 2 O and Li 4 SiO 4 formed during the first lithium intercalation process of silicon oxide-based negative electrode materials can prevent the agglomeration of nano-Si particles in the active phase, and can also effectively buffer the volume effect of Si during charge and discharge, and obtain Good cycle performance. Therefore, silicon oxide-based composite electrode materials have received extensive attention and development.

现有技术(International Journal ofElectrochemical Science 7(2012):8745)通过高能球磨预处理,对几十微米尺寸的商业氧化硅颗粒进行高转速研磨处理,处理后的氧化硅纳米颗粒与石墨复合制备出氧化硅基复合材料,该材料百次循环后循环容量仍近900mAh/g。也有现有技术(Journal ofPower Sources 222(2013):129)对商用纳米氧化硅粉进行高温歧化和高能球磨处理,制备出氧化硅基负极材料,该材料经长循环后仍保持1000mAh/g的可逆容量。The prior art (International Journal of Electrochemical Science 7(2012): 8745) uses high-energy ball milling pretreatment to perform high-speed grinding treatment on commercial silicon oxide particles with a size of tens of microns, and the processed silicon oxide nanoparticles are combined with graphite to prepare oxide Silicon-based composite material, the cycle capacity of the material is still nearly 900mAh/g after 100 cycles. There is also an existing technology (Journal of Power Sources 222(2013): 129) that conducts high-temperature disproportionation and high-energy ball milling treatment on commercial nano-silica powder to prepare a silica-based negative electrode material, which still maintains a reversible capacity of 1000mAh/g after a long cycle. capacity.

纵观现有对于氧化硅基负极材料的研究报道,大多采用价格昂贵的商用纳米氧化硅为原料;另外也有采用高能球磨法制备纳米氧化硅基复合材料,但产率低,成本较高,且材料的纳米化造成较低的振实密度,不利于便携式电子设备对锂离子电池高体积能量密度的要求。考虑到在工艺研究中常关注在氧化亚硅基础上进行包覆改性,而从产业化的角度上尚无对氧化亚硅负极的标准化包覆工艺的报道。Throughout the existing research reports on silicon oxide-based negative electrode materials, most of them use expensive commercial nano-silicon oxide as raw materials; in addition, nano-silicon oxide-based composite materials are prepared by high-energy ball milling, but the yield is low and the cost is high. The nanonization of materials results in lower tap density, which is not conducive to the requirement of high volume energy density of lithium-ion batteries for portable electronic devices. Considering that coating modification on the basis of silicon oxide is often concerned in process research, and from the perspective of industrialization, there is no report on a standardized coating process for silicon oxide negative electrodes.

针对现有技术的不足,尚需要开发一种实用性强、材料性能优异、连续生产、成本低廉的硅负极材料的系统及方法,是具有十分重要的意义和紧迫性的。In view of the deficiencies of the existing technologies, it is of great significance and urgency to develop a system and method for silicon anode materials with strong practicability, excellent material performance, continuous production and low cost.

发明内容Contents of the invention

鉴于现有技术中存在的问题,本发明的目的在于提供一种硅负极材料及其生产系统、生产方法与应用,所述生产系统依次包括氧化亚硅反应生成单元、流化破碎单元及流化包覆单元,分别实现高温真空蒸镀、流化式气流粉碎及流化床化学沉积,即,使氧化亚硅原料通过真空蒸镀工艺制备块状氧化亚硅,经流化气流粉碎及筛分后,再于流化态下进行气相碳包覆处理,从而生产出高性能的硅负极材料,形成氧化亚硅负极材料的工艺系统解决方法,具有设备系统化、产率高、连续运行的特点,使用该生产系统进行的所述生产方法工艺简单、操作性强且安全可靠。In view of the problems existing in the prior art, the purpose of the present invention is to provide a silicon negative electrode material and its production system, production method and application. The production system sequentially includes a silicon oxide reaction generation unit, a fluidized crushing unit and a fluidized The coating unit realizes high-temperature vacuum evaporation, fluidized airflow pulverization and fluidized bed chemical deposition respectively, that is, the raw material of silicon oxide is prepared by vacuum evaporation process to prepare bulk silicon oxide, and it is pulverized and screened by fluidized airflow Finally, gas-phase carbon coating treatment is carried out in a fluidized state to produce high-performance silicon negative electrode materials, forming a process system solution for silicon oxide negative electrode materials, which has the characteristics of systematic equipment, high yield, and continuous operation , the production method carried out by using the production system is simple in process, strong in operability, safe and reliable.

第一方面,本发明提供了一种。一种硅负极材料的生产系统,所述生产系统沿物料的流动方向依次包括氧化亚硅反应生成单元、流化破碎单元及流化包覆单元;In a first aspect, the present invention provides a method. A production system for silicon negative electrode materials, the production system sequentially includes a silicon oxide reaction generation unit, a fluidized crushing unit, and a fluidized coating unit along the flow direction of materials;

所述氧化亚硅反应生成单元中包括依次连接的真空反应室及沉积反应室,所述真空反应室的温度大于所述沉积反应室的温度;The silicon oxide reaction generation unit includes a vacuum reaction chamber and a deposition reaction chamber connected in sequence, and the temperature of the vacuum reaction chamber is higher than the temperature of the deposition reaction chamber;

所述流化破碎单元及所述流化包覆单元均包括独立使用的流化床装置,分别进行气流破碎及气相包覆,其中,所述流化包覆单元的流化床装置包括流化床包覆反应室。Both the fluidized crushing unit and the fluidized coating unit include an independently used fluidized bed device for performing airflow crushing and gas phase coating respectively, wherein the fluidized bed device of the fluidized coating unit includes a fluidized The bed encases the reaction chamber.

本发明所述生产系统的设计及结构兼顾了各工艺段之间的衔接和匹配,可以更好地实现材料在工艺段之间的传输,提高工艺效率,降低材料损耗,延长各工艺段装备的使用时间,降低全周期使用寿命成本。The design and structure of the production system in the present invention take into account the connection and matching between the various process sections, which can better realize the transmission of materials between the process sections, improve process efficiency, reduce material loss, and prolong the service life of each process section equipment. Use time, reduce the life cycle cost of the whole cycle.

需要强调的是,所述流化床包覆反应室具有如下优点:(1)气固充分混合,两相间传热传质系数高,可缩短时间,提高设备的生产能力;(2)设备生产强度大,可连续操作;(3)固体颗粒流态化之后具有流体的特性,故操作方便,易控制,可减轻一定的劳动强度;(4)设备简单,易于维修和制造;(5)操作安全性好。It should be emphasized that the fluidized bed-coated reaction chamber has the following advantages: (1) the gas and solid are fully mixed, and the heat and mass transfer coefficient between the two phases is high, which can shorten the time and improve the production capacity of the equipment; (2) the equipment production It has high strength and can be operated continuously; (3) solid particles have fluid characteristics after fluidization, so it is convenient to operate, easy to control, and can reduce a certain amount of labor intensity; (4) simple equipment, easy to maintain and manufacture; (5) operation Good security.

本发明所述流化床包覆反应室优选为立式流化床反应器,采用流化床化学气相沉积法,在其中完成碳包覆,能够连续生产出高性能硅负极材料,同时缩短了生产周期;所述流化床化学气相沉积法具备高传热传质特性,有利于提高反应效率,充分反应,使得气体分子扩散进入原料颗粒气孔、缺陷及裂缝,从而沉积形成有效的填埋包覆结构。The fluidized bed coating reaction chamber of the present invention is preferably a vertical fluidized bed reactor, and the fluidized bed chemical vapor deposition method is used to complete the carbon coating in it, so that high-performance silicon negative electrode materials can be continuously produced, and at the same time shorten the Production cycle; the fluidized bed chemical vapor deposition method has high heat and mass transfer characteristics, which is conducive to improving reaction efficiency and sufficient reaction, so that gas molecules diffuse into the pores, defects and cracks of raw material particles, thereby depositing and forming effective landfill bags overlay structure.

所述生产系统是指设备系统、装置系统或生产装置。The production system refers to an equipment system, a device system or a production device.

以下作为本发明优选的技术方案,但不作为本发明提供的技术方案的限制,通过以下技术方案,可以更好地达到和实现本发明的技术目的和有益效果。The following are preferred technical solutions of the present invention, but not as limitations of the technical solutions provided by the present invention. Through the following technical solutions, the technical objectives and beneficial effects of the present invention can be better achieved and realized.

作为本发明优选的技术方案,所述真空反应室通过第一加热炉进行加热。As a preferred technical solution of the present invention, the vacuum reaction chamber is heated by a first heating furnace.

优选地,所述氧化亚硅反应生产单元还包括料仓,所述料仓的出料口与所述真空反应室相连。Preferably, the silicon oxide reaction production unit further includes a silo, and an outlet of the silo is connected to the vacuum reaction chamber.

优选地,所述料仓通过第一阀门与所述真空反应室相连。Preferably, the silo is connected to the vacuum reaction chamber through a first valve.

优选地,所述沉积反应室通过第二加热炉进行加热。Preferably, the deposition reaction chamber is heated by a second heating furnace.

优选地,所述真空反应室的出料口通过输送装置与所述沉积反应室相的进料口相连,所述沉积反应室的出料口为所述氧化硅反应生成单元的出料口。Preferably, the discharge port of the vacuum reaction chamber is connected to the feed port of the deposition reaction chamber through a conveying device, and the discharge port of the deposition reaction chamber is the discharge port of the silicon oxide reaction generation unit.

作为本发明优选的技术方案,所述流化破碎单元的流化床装置为流化床气流粉碎装置,所述流化床气流粉碎装置的进料口与所述氧化亚硅反应生成单元的出料口相连。As a preferred technical solution of the present invention, the fluidized bed device of the fluidized crushing unit is a fluidized bed airflow crushing device, and the inlet of the fluidized bed airflow crushing device is connected with the outlet of the silicon oxide reaction generation unit. The feed port is connected.

优选地,所述流化床气流粉碎装置的进料口通过第二阀门与所述氧化亚硅反应生成单元的出料口相连。Preferably, the feed port of the fluidized-bed jet pulverization device is connected with the discharge port of the silicon oxide reaction generation unit through a second valve.

优选地,所述流化破碎单元还包括粉体筛分装置。Preferably, the fluidized crushing unit further includes a powder screening device.

优选地,所述化床气流粉碎装置的出料口与所述粉体筛分装置的进料口相连。Preferably, the discharge port of the fluidized bed jet milling device is connected to the feed port of the powder screening device.

优选地,所述粉体筛分装置的出料口分为两路,其中一路返回至所述流化床气流粉碎装置的进料口,另一路作为所述流化破碎单元的出料口。Preferably, the discharge port of the powder screening device is divided into two paths, one of which is returned to the feed port of the fluidized bed jet crushing device, and the other path is used as the discharge port of the fluidized crushing unit.

作为本发明优选的技术方案,所述流化包覆单元的流化床装置还包括加热所述流化床包覆反应室的第三加热炉,所述流化床包覆反应室的进料口与所述流化破碎单元的出料口相连。As a preferred technical solution of the present invention, the fluidized bed device of the fluidized coating unit further includes a third heating furnace for heating the fluidized bed coated reaction chamber, and the feed of the fluidized bed coated reaction chamber is The port is connected with the discharge port of the fluidized crushing unit.

优选地,所述流化床包覆反应室的进料口通过第三阀门与所述流化破碎单元的出料口相连。Preferably, the feed port of the fluidized bed coating reaction chamber is connected with the discharge port of the fluidized crushing unit through a third valve.

本发明所述第一阀门、第二阀门及第三阀门均为流量控制阀,用于物料流向的控制。The first valve, the second valve and the third valve in the present invention are all flow control valves, which are used to control the flow direction of materials.

优选地,所述流化床包覆反应室设置有流化气体入口、包覆气体入口、尾气出口及产品出口。Preferably, the fluidized bed coating reaction chamber is provided with a fluidization gas inlet, a coating gas inlet, a tail gas outlet and a product outlet.

优选地,所述流化气体入口及所述包覆气体入口均独立地设置于所述流化床包覆反应室的底部,且分别连接有流化气体进气管与碳源气体进气管。Preferably, both the fluidization gas inlet and the coating gas inlet are independently arranged at the bottom of the fluidized bed coating reaction chamber, and are respectively connected with a fluidization gas inlet pipe and a carbon source gas inlet pipe.

优选地,所述流化床包覆反应室为立式流化床。Preferably, the fluidized bed coating reaction chamber is a vertical fluidized bed.

优选地,所述流化包覆单元还包括与所述尾气出口相连接的尾气装置。Preferably, the fluidized coating unit further includes an exhaust device connected to the exhaust outlet.

优选地,所述流化包覆单元还包括与所述产品出口相连的产品收集装置。Preferably, the fluidized coating unit further includes a product collecting device connected to the product outlet.

第二方面,本发明提供了一种硅负极材料的生产方法,所述生产方法采用第一方面所述的生产系统,所述生产方法包括如下步骤:In a second aspect, the present invention provides a method for producing a silicon negative electrode material, the production method adopts the production system described in the first aspect, and the production method includes the following steps:

(1)将氧化亚硅原料投入真空反应室中,在真空下进行第一加热反应,得到氧化亚硅蒸气;同时将沉积反应室及流化床包覆反应室升至预设温度并保温;(1) Put the silicon oxide raw material into the vacuum reaction chamber, carry out the first heating reaction under vacuum to obtain silicon oxide vapor; at the same time, raise the deposition reaction chamber and the fluidized bed coating reaction chamber to a preset temperature and keep it warm;

(2)将步骤(1)所得氧化亚硅蒸气输送到所述沉积反应室中,进行第二加热反应,得到块状氧化亚硅;(2) transporting the silicon dioxide vapor obtained in step (1) into the deposition reaction chamber, and performing a second heating reaction to obtain bulk silicon dioxide;

(3)将步骤(2)所得块状氧化亚硅输送到流化破碎单元的流化床装置中进行气流破碎,得到颗粒氧化亚硅;(3) transporting the massive silicon oxide obtained in step (2) to the fluidized bed device of the fluidized crushing unit for air crushing to obtain granular silicon oxide;

(4)将步骤(3)所得颗粒氧化亚硅输送到流化床包覆反应室,通入流化气体使颗粒氧化亚硅流态化,再通入包覆气体进行气相碳包覆,得到硅负极材料。(4) The granular silicon oxide obtained in step (3) is transported to the fluidized bed coating reaction chamber, and the fluidized gas is introduced to fluidize the granular silicon oxide, and then the coating gas is introduced to carry out gas-phase carbon coating to obtain silicon dioxide. Negative material.

本发明所述生产方法实现了氧化亚硅的块状生产、颗粒粉碎和碳包覆连贯进行,缩短了硅负极材料的制备周期,制备工艺简单,操作性强,安全可靠,环境友好,成本低廉;制得的硅负极材料具有高循环比容量和高循环稳定性等性能优点。The production method of the present invention realizes the massive production of silicon oxide, particle crushing and carbon coating are carried out continuously, shortens the preparation period of the silicon negative electrode material, has simple preparation process, strong operability, safety, reliability, environmental friendliness and low cost ; The prepared silicon negative electrode material has performance advantages such as high cycle specific capacity and high cycle stability.

作为本发明优选的技术方案,所述步骤(1)所述氧化亚硅原料投入真空反应室中的过程通过第一阀门进行控制。As a preferred technical solution of the present invention, the process of putting the silicon oxide raw material into the vacuum reaction chamber in the step (1) is controlled by the first valve.

优选地,步骤(1)所述第一加热反应的温度通过第一加热炉控制。Preferably, the temperature of the first heating reaction in step (1) is controlled by a first heating furnace.

优选地,步骤(1)所述真空的真空度为0.01~100Pa,例如0.01Pa、0.05Pa、0.1Pa、0.3Pa、0.5Pa、0.8Pa、1Pa、3Pa、5Pa、8Pa、10Pa、13Pa、16Pa、18Pa、20Pa、25Pa、30Pa、40Pa、50Pa、60Pa、70Pa、80Pa、90Pa或100Pa等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, the degree of vacuum in step (1) is 0.01-100Pa, such as 0.01Pa, 0.05Pa, 0.1Pa, 0.3Pa, 0.5Pa, 0.8Pa, 1Pa, 3Pa, 5Pa, 8Pa, 10Pa, 13Pa, 16Pa , 18Pa, 20Pa, 25Pa, 30Pa, 40Pa, 50Pa, 60Pa, 70Pa, 80Pa, 90Pa or 100Pa, etc., but not limited to the listed values, other unlisted values within the above range of values are also applicable.

优选地,步骤(1)所述第一加热反应的温度为1100~1600℃,例如1100℃、1150℃、1200℃、1250℃、1300℃、1350℃、1400℃、1450℃、1500℃、1550℃或1600℃等,时间为4~24h,例如4h、6h、8h、10h、12h、14h、16h、18h、20h、22h或24h等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, the temperature of the first heating reaction in step (1) is 1100-1600°C, such as 1100°C, 1150°C, 1200°C, 1250°C, 1300°C, 1350°C, 1400°C, 1450°C, 1500°C, 1550°C °C or 1600 °C, etc., the time is 4 to 24h, such as 4h, 6h, 8h, 10h, 12h, 14h, 16h, 18h, 20h, 22h or 24h, etc., but not limited to the listed values, other values within the above range Values not listed also apply.

优选地,步骤(2)所述将步骤(2)所得块状氧化亚硅输送到流化破碎单元的流化床装置中的过程通过第二阀门进行控制。Preferably, in step (2), the process of transporting the bulk silicon oxide obtained in step (2) to the fluidized bed device of the fluidized crushing unit is controlled through a second valve.

优选地,步骤(2)所述第二加热反应的温度通过第二加热炉控制。Preferably, the temperature of the second heating reaction in step (2) is controlled by a second heating furnace.

优选地,步骤(2)所述第二加热反应的温度为500~900℃,例如500℃、550℃、600℃、650℃、700℃、750℃、800℃、850℃或900℃等,时间为2~8h,例如2h、3h、4h、5h、6h、7h或8h等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, the temperature of the second heating reaction in step (2) is 500-900°C, such as 500°C, 550°C, 600°C, 650°C, 700°C, 750°C, 800°C, 850°C or 900°C, etc., The time is 2-8h, such as 2h, 3h, 4h, 5h, 6h, 7h or 8h, etc., but not limited to the listed values, and other unlisted values within the above range of values are also applicable.

优选地,步骤(4)所述将步骤(3)所得颗粒氧化亚硅输送到流化床包覆反应室的过程通过第三阀门控制。Preferably, in step (4), the process of transporting the granular silicon oxide obtained in step (3) to the fluidized bed coating reaction chamber is controlled by a third valve.

优选地,步骤(4)所述气相碳包覆的温度通过第三加热炉控制。Preferably, the temperature of the vapor-phase carbon coating in step (4) is controlled by a third heating furnace.

优选地,步骤(4)所述气相碳包覆的温度为600~1000℃,例如600℃、650℃、700℃、750℃、800℃、850℃、900℃、950℃或1000℃等,时间为0.5~2h,例如0.5h、0.8h、1.1h、1.4h、1.7h或2h等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, the temperature of gas-phase carbon coating in step (4) is 600-1000°C, such as 600°C, 650°C, 700°C, 750°C, 800°C, 850°C, 900°C, 950°C or 1000°C, etc., The time is 0.5-2h, such as 0.5h, 0.8h, 1.1h, 1.4h, 1.7h or 2h, etc., but not limited to the listed values, and other unlisted values within the above range of values are also applicable.

作为本发明优选的技术方案,步骤(3)所述流化破碎单元的流化床装置为流化床气流粉碎装置,当块状氧化亚硅输送到所述流化床气流粉碎装置中进行气流破碎后,再输送到粉体筛分装置,使未通过筛分的粗颗粒氧化亚硅重新回到所述流化床气流粉碎装置中进行二次粉碎处理;通过筛分的颗粒氧化硅输送到流化床包覆反应室。As a preferred technical solution of the present invention, the fluidized bed device of the fluidized crushing unit described in step (3) is a fluidized bed airflow crushing device, and when the bulk silicon oxide is transported to the fluidized bed airflow crushing device for airflow After crushing, it is sent to the powder screening device, so that the coarse silicon oxide that has not passed the screening is returned to the fluidized bed jet crushing device for secondary crushing; the sieved particle silicon oxide is sent to A fluidized bed envelops the reaction chamber.

优选地,所述通过筛分的颗粒氧化硅的粒度为1~20μm,例如1μm、2μm、3μm、4μm、5μm、6μm、7μm、8μm、9μm、10μm、11μm、12μm、13μm、14μm、15μm、16μm、17μm、18μm、19μm或20μm等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, the particle size of the sieved granular silica is 1-20 μm, such as 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, 10 μm, 11 μm, 12 μm, 13 μm, 14 μm, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm or 20 μm, etc., but not limited to the listed values, and other unlisted values within the above range of values are also applicable.

优选地,步骤(4)所得硅负极材料通过产品收集装置进行收集存储,流化床包覆反应室产生的尾气通过尾气装置进行收集并后处理。Preferably, the silicon anode material obtained in step (4) is collected and stored through a product collection device, and the tail gas generated in the fluidized bed coating reaction chamber is collected and post-treated through a tail gas device.

优选地,步骤(4)所述流化气体包括氮气和/或氩气。Preferably, the fluidizing gas in step (4) includes nitrogen and/or argon.

优选地,步骤(4)所述包覆气体包括甲烷、乙烯、乙炔或丙烯中的任一种或至少两种的组合。Preferably, the cladding gas in step (4) includes any one or a combination of at least two of methane, ethylene, acetylene or propylene.

优选地,步骤(4)中,以所述流化气体与所述包覆气体的总体积为100%计,所述包覆气体的体积占5%~30%,例如5%、7%、9%、11%、13%、15%、17%、19%、21%、23%、25%、28%或30%等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, in step (4), based on the total volume of the fluidization gas and the cladding gas as 100%, the volume of the cladding gas accounts for 5% to 30%, such as 5%, 7%, 9%, 11%, 13%, 15%, 17%, 19%, 21%, 23%, 25%, 28% or 30%, etc., but not limited to the listed values, other values within the above range are not listed values are also applicable.

优选地,步骤(4)中,所述流化气体与所述包覆气体的总气体流速为0.1~2m/s,例如0.1m/s、0.3m/s、0.5m/s、0.7m/s、0.9m/s、1.1m/s、1.3m/s、1.5m/s、1.7m/s、1.8m/s或2m/s等,但不限于所列举的数值,上述数值范围内的其他未列举的数值同样适用。Preferably, in step (4), the total gas flow rate of the fluidization gas and the cladding gas is 0.1-2m/s, such as 0.1m/s, 0.3m/s, 0.5m/s, 0.7m/s s, 0.9m/s, 1.1m/s, 1.3m/s, 1.5m/s, 1.7m/s, 1.8m/s or 2m/s, etc., but not limited to the listed values, within the above range Other values not listed also apply.

作为本发明优选的技术方案,所述生产方法包括如下步骤:As a preferred technical solution of the present invention, the production method comprises the following steps:

(1)打开第一阀门,关闭第二阀门和第三阀门,将氧化亚硅原料投入真空反应室,关闭第一阀门后对真空反应室进行抽真空处理,使真空度达到0.01~100Pa,通过第一加热炉提升真空反应室的温度为1100~1600℃,进行第一加热反应4~24h,得到氧化亚硅蒸气;同时通过第二加热炉及第三加热炉分别将沉积反应室及流化床包覆反应室升至预设温度并保温;(1) Open the first valve, close the second valve and the third valve, put the silicon oxide raw material into the vacuum reaction chamber, close the first valve and vacuumize the vacuum reaction chamber to make the vacuum degree reach 0.01-100Pa, pass The first heating furnace raises the temperature of the vacuum reaction chamber to 1100-1600°C, and the first heating reaction is carried out for 4-24 hours to obtain silicon oxide vapor; at the same time, the deposition reaction chamber and the fluidized The bed-covered reaction chamber is raised to a preset temperature and kept warm;

(2)将步骤(1)所得氧化亚硅蒸气输送到沉积反应室,通过第二加热炉提升沉积反应室的温度为500~900℃,进行第二加热反应2~8h,得到块状氧化亚硅;(2) Transport the silicon dioxide vapor obtained in step (1) to the deposition reaction chamber, raise the temperature of the deposition reaction chamber to 500-900°C through the second heating furnace, and perform the second heating reaction for 2-8 hours to obtain massive silicon dioxide silicon;

(3)打开第二阀门,将步骤(2)所得块状氧化亚硅输送到流化破碎单元的流化床气流粉碎装置中,关闭第二阀门,块状氧化亚硅经气流粉碎处理后进入粉体筛分装置,筛分处理后的未通过筛分的粗颗粒氧化亚硅回到流化床气流粉碎装置中继续进行二次粉碎处理,通过筛分的颗粒氧化硅的粒度为1~20μm;(3) Open the second valve, transport the massive silicon oxide obtained in step (2) to the fluidized bed airflow pulverization device of the fluidized crushing unit, close the second valve, and the massive silicon oxide enters the Powder sieving device, after sieving, the coarse silicon oxide that has not passed the screening is returned to the fluidized bed jet milling device for secondary crushing, and the particle size of the sieved silicon oxide is 1-20 μm ;

(4)打开第三阀门,将筛分后粒度合格的颗粒氧化亚硅颗粒送入流化床包覆反应室,关闭第三阀门,向流化床包覆反应室通入流化气体,所述流化气体包括氮气和/或氩气,使氧化亚硅颗粒流态化,然后通入包覆气体,所述包覆气体包括甲烷、乙烯、乙炔或丙烯中的任一种或至少两种的组合,控制以所述流化气体与所述包覆气体的总体积为100%计,所述包覆气体的体积占5%~30%,控制所述流化气体与所述包覆气体的总气体流速为0.1~2m/s,并通过第三加热炉提升流化床包覆反应室的温度为600~1000℃,进行气相碳包覆0.5~2h,得到硅负极材料,进入产品收集装置,尾气进入尾气装置进行后处理。(4) Open the third valve, send the silicon oxide granules with qualified particle size after sieving into the fluidized bed coating reaction chamber, close the third valve, and feed fluidizing gas into the fluidized bed coating reaction chamber. The fluidizing gas includes nitrogen and/or argon to fluidize the silicon oxide particles, and then pass through the covering gas, and the covering gas includes any one or at least two of methane, ethylene, acetylene or propylene. Combination, control the total volume of the fluidization gas and the cladding gas as 100%, the volume of the cladding gas accounts for 5% to 30%, and control the volume of the fluidizing gas and the cladding gas The total gas flow rate is 0.1-2m/s, and the temperature of the fluidized bed coating reaction chamber is raised to 600-1000°C through the third heating furnace, and the gas-phase carbon coating is carried out for 0.5-2h to obtain the silicon negative electrode material and enter the product collection device , the exhaust gas enters the exhaust device for post-treatment.

第三方面,本发明提供了一种第二方面所述的生产方法得到的硅负极材料。In a third aspect, the present invention provides a silicon negative electrode material obtained by the production method described in the second aspect.

第四方面,本发明提供了一种第三方面所述的硅负极材料在离子电池中的应用。In a fourth aspect, the present invention provides an application of the silicon negative electrode material described in the third aspect in an ion battery.

本发明所述的数值范围不仅包括上述列举的点值,还包括没有列举出的上述数值范围之间的任意的点值,限于篇幅及出于简明的考虑,本发明不再穷尽列举所述范围包括的具体点值。The numerical ranges described in the present invention not only include the above-listed point values, but also include any point values between the above-mentioned numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention will not exhaustively list the ranges. The specific pip value to include.

与现有技术方案相比,本发明至少具有以下有益效果:Compared with the prior art solutions, the present invention has at least the following beneficial effects:

(1)本发明采用系统集成设计,充分考虑了系统内各工艺段设备衔接和匹配,有利于提升所述生产系统的效能和生产力;(1) The present invention adopts a system integration design, which fully considers the connection and matching of equipment in each process section in the system, which is conducive to improving the efficiency and productivity of the production system;

(2)本发明所述生产系统采用立式流化床反应器,通过流化态下的化学气相沉积技术在材料表面完成碳包覆,不仅能够连续生产出高性能硅负极材料,产率高,保证了工艺的连贯性,缩短了生产周期,还能避免材料静态堆积造成的聚集结块、沉积不均匀的问题;(2) The production system of the present invention adopts a vertical fluidized bed reactor, and completes carbon coating on the surface of the material through chemical vapor deposition technology in a fluidized state, which not only can continuously produce high-performance silicon negative electrode materials, but also has a high yield , to ensure the continuity of the process, shorten the production cycle, and avoid the problems of agglomeration and uneven deposition caused by static accumulation of materials;

(3)本发明所述制备方法工艺简单,操作性强,安全可靠,环境友好,成本低廉,制备的硅负极材料应用于电池,具有较高的首次放电比容量和百圈容量保持率。(3) The preparation method of the present invention is simple in process, strong in operability, safe and reliable, environment-friendly, and low in cost. The prepared silicon negative electrode material is applied to batteries and has high initial discharge specific capacity and 100-cycle capacity retention rate.

附图说明Description of drawings

图1是实施例1所述硅负极材料的生产系统的示意图;Fig. 1 is the schematic diagram of the production system of silicon anode material described in embodiment 1;

图中:1-料仓,2-第一阀门,3-第一加热炉,4-真空反应室,5-输送装置,6-第二加热炉,7-沉积反应室,8-第二阀门,9-流化床气流粉碎装置,10-粉体筛分装置,11-第三阀门,12-第三加热炉,13-流化床包覆反应室,14-尾气装置,15-产品收集装置。In the figure: 1-Material bin, 2-First valve, 3-First heating furnace, 4-Vacuum reaction chamber, 5-Conveying device, 6-Second heating furnace, 7-Deposition reaction chamber, 8-Second valve , 9-fluidized bed jet crushing device, 10-powder screening device, 11-third valve, 12-third heating furnace, 13-fluidized bed coating reaction chamber, 14-tail gas device, 15-product collection device.

具体实施方式Detailed ways

下面结合附图并通过具体实施方式来进一步说明本发明的技术方案。本领域技术人员应该明了,所述实施例仅仅是帮助理解本发明,不应视为对本发明的具体限制。The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods. It should be clear to those skilled in the art that the examples are only for helping to understand the present invention, and should not be regarded as specific limitations on the present invention.

实施例1Example 1

本实施例提供了一种硅负极材料的生产系统,如图1所示:This embodiment provides a production system for a silicon negative electrode material, as shown in Figure 1:

所述生产系统沿物料的流动方向依次包括氧化亚硅反应生成单元、流化破碎单元及流化包覆单元;The production system sequentially includes a silicon oxide reaction generation unit, a fluidized crushing unit and a fluidized coating unit along the flow direction of the material;

所述氧化亚硅反应生成单元中包括沿物料流向依次连接的料仓1、真空反应室4及沉积反应室7;所述料仓1与所述真空反应室4之间设置有第一阀门1;所述真空反应室4通过第一加热炉3进行加热,所述沉积反应室7通过第二加热炉6进行加热,使得所述真空反应室4的温度大于所述沉积反应室7的温度;所述真空反应室4的出料口通过输送装置5与所述沉积反应室7相的进料口相连,The silicon oxide reaction generation unit includes a silo 1, a vacuum reaction chamber 4 and a deposition reaction chamber 7 sequentially connected along the material flow direction; a first valve 1 is arranged between the silo 1 and the vacuum reaction chamber 4 The vacuum reaction chamber 4 is heated by the first heating furnace 3, and the deposition reaction chamber 7 is heated by the second heating furnace 6, so that the temperature of the vacuum reaction chamber 4 is greater than the temperature of the deposition reaction chamber 7; The discharge port of the vacuum reaction chamber 4 is connected to the feed port of the deposition reaction chamber 7 through a conveying device 5,

所述流化破碎单元包括沿物料流向依次连接的流化床气流粉碎装置9及粉体筛分装置10,所述流化床气流粉碎装置9的进料口通过第二阀门8与所述沉积反应室7的出料口相连;所述粉体筛分装置10的出料口分为两路,其中一路返回至所述流化床气流粉碎装置9的进料口,另一路作为所述流化破碎单元的出料口;The fluidized crushing unit includes a fluidized bed airflow crushing device 9 and a powder screening device 10 connected in sequence along the material flow direction, and the feed port of the fluidized bed airflow crushing device 9 is connected to the depositor through a second valve 8. The discharge port of the reaction chamber 7 is connected; the discharge port of the powder screening device 10 is divided into two paths, one of which is returned to the feed port of the fluidized bed jet crushing device 9, and the other path is used as the flow path. The outlet of chemical crushing unit;

所述流化包覆单元包括流化床包覆反应室13;所述流化床包覆反应室13为立式流化床,且通过第三加热炉12进行加热;所述流化床包覆反应室13的进料口通过第三阀门11与所述流化破碎单元的出料口的相连;所述流化床包覆反应室13还设置有流化气体入口、包覆气体入口、尾气出口及产品出口;所述流化气体入口及所述包覆气体入口均独立地设置于所述流化床包覆反应室13的底部,且分别连接有流化气体进气管与碳源气体进气管;所述尾气出口设置于流化床包覆反应室13的顶部,并连接有尾气装置14;所述产品出口连接有产品收集装置15。The fluidized coating unit includes a fluidized bed coating reaction chamber 13; the fluidized bed coating reaction chamber 13 is a vertical fluidized bed, and is heated by a third heating furnace 12; the fluidized bed coating The feed port of the coating reaction chamber 13 is connected with the discharge port of the fluidized crushing unit through the third valve 11; the fluidized bed coating reaction chamber 13 is also provided with a fluidization gas inlet, a coating gas inlet, Tail gas outlet and product outlet; the fluidization gas inlet and the coating gas inlet are all independently arranged at the bottom of the fluidized bed coating reaction chamber 13, and are respectively connected with a fluidization gas inlet pipe and a carbon source gas Intake pipe; the tail gas outlet is arranged on the top of the fluidized bed-coated reaction chamber 13, and is connected with a tail gas device 14; the product outlet is connected with a product collection device 15.

以下应用例及应用对比例均使用实施例1所提供的生产系统。The following application examples and application comparison examples all use the production system provided in Example 1.

应用例1Application example 1

本应用例提供了一种硅负极材料的生产方法,所述生产方法包括如下步骤:This application example provides a production method of a silicon negative electrode material, the production method comprising the following steps:

(1)打开第一阀门1,关闭第二阀门8和第三阀门11,将氧化亚硅原料投入真空反应室4,关闭第一阀门1后对真空反应室4进行抽真空处理,使真空度达到10Pa,通过第一加热炉3提升真空反应室4的温度为1400℃,进行第一加热反应10h,得到氧化亚硅蒸气;同时通过第二加热炉6及第三加热炉12分别将沉积反应室7及流化床包覆反应室13升至600℃及800℃并保温;(1) Open the first valve 1, close the second valve 8 and the third valve 11, put the silicon oxide raw material into the vacuum reaction chamber 4, and after closing the first valve 1, vacuumize the vacuum reaction chamber 4 to make the vacuum degree When it reaches 10Pa, the temperature of the vacuum reaction chamber 4 is raised to 1400°C through the first heating furnace 3, and the first heating reaction is carried out for 10 hours to obtain silicon oxide vapor; at the same time, the deposition reaction is respectively carried out through the second heating furnace 6 and the third heating furnace 12 Chamber 7 and fluidized bed coating reaction chamber 13 are raised to 600°C and 800°C and kept warm;

(2)将步骤(1)所得氧化亚硅蒸气输送到沉积反应室7,通过第二加热炉6提升沉积反应室7的温度为600℃,进行第二加热反应4h,得到块状氧化亚硅;(2) Transport the silicon dioxide vapor obtained in step (1) to the deposition reaction chamber 7, raise the temperature of the deposition reaction chamber 7 to 600°C through the second heating furnace 6, and perform the second heating reaction for 4 hours to obtain bulk silicon oxide ;

(3)打开第二阀门8,将步骤(2)所得块状氧化亚硅输送到流化破碎单元的流化床气流粉碎装置9中,关闭第二阀门8,块状氧化亚硅经气流粉碎处理后进入粉体筛分装置10,筛分处理后的未通过筛分的粗颗粒氧化亚硅回到流化床气流粉碎装置9中继续进行二次粉碎处理,通过筛分的颗粒氧化硅的粒度为5μm;(3) Open the second valve 8, transport the massive silicon dioxide obtained in step (2) to the fluidized bed airflow pulverization device 9 of the fluidized crushing unit, close the second valve 8, and the massive silicon dioxide is pulverized by airflow After the treatment, it enters the powder screening device 10, and the coarse particle silicon oxide that has not passed the screening after the screening process is returned to the fluidized bed jet milling device 9 to continue the secondary crushing treatment, and the particle silicon oxide that passes the screening is The particle size is 5μm;

(4)打开第三阀门11,将筛分后粒度合格的颗粒氧化亚硅颗粒送入流化床包覆反应室13,关闭第三阀门11,向流化床包覆反应室13通入流化气体(氮气),使氧化亚硅颗粒流态化,然后通入包覆气体(乙炔),所述包覆气体包括甲烷、乙烯、乙炔或丙烯中的任一种或至少两种的组合,控制以所述流化气体与所述包覆气体的总体积为100%计,所述包覆气体的体积占10%,控制所述流化气体与所述包覆气体的总气体流速为1m/s,并通过第三加热炉12提升流化床包覆反应室13的温度为800℃,进行气相碳包覆1h,得到硅负极材料,进入产品收集装置15,尾气进入尾气装置14进行后处理。(4) Open the third valve 11, send the granulated silica particles with qualified particle size after sieving into the fluidized bed coating reaction chamber 13, close the third valve 11, and pass into the fluidized bed coating reaction chamber 13. gas (nitrogen) to fluidize the silicon oxide particles, and then pass through the cladding gas (acetylene), the cladding gas includes any one or a combination of at least two of methane, ethylene, acetylene or propylene, and the control Taking the total volume of the fluidization gas and the cladding gas as 100%, the volume of the cladding gas accounts for 10%, and the total gas flow rate of the fluidizing gas and the cladding gas is controlled to be 1m/ s, and through the third heating furnace 12, the temperature of the fluidized bed coating reaction chamber 13 is raised to 800 ° C, and the gas phase carbon coating is carried out for 1 hour to obtain the silicon negative electrode material, which enters the product collection device 15, and the tail gas enters the tail gas device 14 for post-treatment .

应用例2Application example 2

本应用例提供了一种硅负极材料的生产方法,所述生产方法中,步骤(1)所述真空度为100Pa,真空反应室4的温度为1600℃,第一加热反应的保温时间为24h;步骤(1)及(2)沉积反应室7的温度为900℃,步骤(2)第二加热反应的保温时间为8h;步骤(3)通过筛分的颗粒氧化硅的粒度为20μm;步骤(1)及步骤(4)流化床包覆反应室13的温度为1000℃,步骤(4)所述流化气体为氩气,所述包覆气体为甲烷,且所述包覆气体的体积占30%,总气体流速为2m/s,气相碳包覆的保温时间为2h,除以上外,其他条件均与应用例1完全相同。This application example provides a production method of a silicon negative electrode material. In the production method, the degree of vacuum in step (1) is 100 Pa, the temperature of the vacuum reaction chamber 4 is 1600° C., and the holding time of the first heating reaction is 24 hours. ; The temperature of step (1) and (2) deposition reaction chamber 7 is 900 ℃, and the holding time of step (2) second heating reaction is 8h; Step (3) the granular silicon oxide particle size that passes sieving is 20 μ m; Step (1) and step (4) The temperature of the fluidized bed coating reaction chamber 13 is 1000 ° C, the fluidization gas in step (4) is argon, the coating gas is methane, and the coating gas The volume accounts for 30%, the total gas flow rate is 2m/s, and the holding time of gas-phase carbon coating is 2h. Except for the above, other conditions are exactly the same as Application Example 1.

应用例3Application example 3

本应用例提供了一种硅负极材料的生产方法,所述生产方法中,步骤(1)所述真空度为0.01Pa,真空反应室4的温度为1100℃,第一加热反应的保温时间为4h;步骤(1)及步骤(2)沉积反应室7的温度为500℃,步骤(2)第二加热反应的保温时间为2h;步骤(3)通过筛分的颗粒氧化硅的粒度为1μm;步骤(1)及步骤(4)流化床包覆反应室13的温度为600℃,步骤(4)所述流化气体为氩气,所述包覆气体为乙烯,且所述包覆气体的体积占5%,总气体流速为0.1m/s,气相碳包覆的保温时间为0.5h,除以上外,其他条件均与应用例1完全相同。This application example provides a production method of a silicon negative electrode material. In the production method, the degree of vacuum in step (1) is 0.01 Pa, the temperature of the vacuum reaction chamber 4 is 1100° C., and the holding time of the first heating reaction is 4h; the temperature of the deposition reaction chamber 7 in step (1) and step (2) is 500°C, and the holding time of the second heating reaction in step (2) is 2h; the particle size of the sieved silicon oxide in step (3) is 1 μm The temperature of step (1) and step (4) fluidized bed coating reaction chamber 13 is 600 ℃, the fluidization gas described in step (4) is argon, the described coating gas is ethylene, and the coating The volume of gas accounts for 5%, the total gas flow rate is 0.1m/s, and the holding time of gas-phase carbon coating is 0.5h. Except for the above, other conditions are exactly the same as those in Application Example 1.

应用对比例1Application Comparative Example 1

本应用对比例提供了一种硅负极材料的生产方法,所述生产方法中,步骤(4)的流化床包覆反应室13中不通入流化气体,不使物料处于流化态,直接通入包覆气体进行气相碳包覆,即相当于采用固定床反应器进行气相包覆,除此之外,其他条件与应用例1完全相同。This application comparative example provides a production method of a silicon negative electrode material. In the production method, the fluidized bed coating reaction chamber 13 in step (4) does not pass into the fluidization gas, does not make the material in a fluidized state, and directly passes through Injecting coating gas for gas-phase carbon coating is equivalent to using a fixed-bed reactor for gas-phase coating. Except for this, other conditions are exactly the same as those in Application Example 1.

将应用例1-3以及应用对比例1制备得到的硅负极材料作为负极材料粉体,选用三元镍钴锰酸锂正极材料及配套的电解液,组装成电池,采用GB/T24533-2009中的测试方法测定其电化学性能,包括首次放电比容量、首次库伦效率和百圈容量保持率,测试结果如表1所示。The silicon anode material prepared in Application Examples 1-3 and Application Comparative Example 1 is used as the anode material powder, and the ternary nickel-cobalt lithium manganese oxide cathode material and the supporting electrolyte are selected to assemble into a battery, using GB/T24533-2009 The test method was used to measure its electrochemical performance, including the first discharge specific capacity, first coulombic efficiency and 100-cycle capacity retention rate. The test results are shown in Table 1.

表1Table 1

项目project 首次放电比容量First discharge specific capacity 首次库伦效率first coulombic efficiency 百圈容量保持率100-cycle capacity retention 应用例1Application example 1 1540mAh·g-1 1540mAh·g -1 85%85% 96%96% 应用例2Application example 2 1400mAh·g-1 1400mAh·g -1 82%82% 94%94% 应用例3Application example 3 1340mAh·g-1 1340mAh·g -1 80%80% 92%92% 应用对比例1Application Comparative Example 1 1100mAh·g-1 1100mAh·g -1 65%65% 65%65%

由表1可以看出:It can be seen from Table 1:

(1)本发明提供的系统用于制备硅负极材料,生产所用时间短,产率高,能够连续运行,制得的硅碳负极材料组装成电池后首次放电比容量、首次库伦效率和百圈容量保持率等性能优异;(1) The system provided by the present invention is used to prepare silicon negative electrode materials. The production time is short, the yield is high, and it can be operated continuously. Excellent performance such as capacity retention;

(2)综合表1测试的电化学性能可知,采用本发明提供的系统装置以及流程方法制备得到的产品粉体作为负极材料具有优异的电化学性能。然而对比例1采用固定床进行包覆时,由于粉体无法实现流化及在反应器内部流动,包覆不成功。(2) Based on the electrochemical properties tested in Table 1, it can be seen that the product powder prepared by using the system device and process method provided by the present invention has excellent electrochemical properties as the negative electrode material. However, when the fixed bed was used for coating in Comparative Example 1, the coating was unsuccessful because the powder could not be fluidized and flow inside the reactor.

本发明通过上述实施例来说明本发明的详细结构特征,但本发明并不局限于上述详细结构特征,即不意味着本发明必须依赖上述详细结构特征才能实施。所属技术领域的技术人员应该明了,对本发明的任何改进,对本发明所选用部件的等效替换以及辅助部件的增加、具体方式的选择等,均落在本发明的保护范围和公开范围之内。The present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must rely on the above detailed structural features to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of selected components in the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the scope of protection and disclosure of the present invention.

以上详细描述了本发明的优选实施方式,但是,本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种简单变型,这些简单变型均属于本发明的保护范围。The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solutions of the present invention. These simple modifications All belong to the protection scope of the present invention.

另外需要说明的是,在上述具体实施方式中所描述的各个具体技术特征,在不矛盾的情况下,可以通过任何合适的方式进行组合,为了避免不必要的重复,本发明对各种可能的组合方式不再另行说明。In addition, it should be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable way if there is no contradiction. The combination method will not be described separately.

此外,本发明的各种不同的实施方式之间也可以进行任意组合,只要其不违背本发明的思想,其同样应当视为本发明所公开的内容。In addition, various combinations of different embodiments of the present invention can also be combined arbitrarily, as long as they do not violate the idea of the present invention, they should also be regarded as the disclosed content of the present invention.

Claims (10)

1. The production system of the silicon cathode material is characterized by sequentially comprising a silicon oxide reaction generating unit, a fluidization crushing unit and a fluidization coating unit along the flow direction of the material;
the silicon oxide reaction generating unit comprises a vacuum reaction chamber and a deposition reaction chamber which are sequentially connected, wherein the temperature of the vacuum reaction chamber is higher than that of the deposition reaction chamber;
the fluidization crushing unit and the fluidization coating unit respectively comprise independently used fluidized bed devices for respectively performing airflow crushing and gas phase coating, wherein the fluidized bed devices of the fluidization coating unit comprise a fluidized bed coating reaction chamber.
2. The production system of claim 1, wherein the vacuum reaction chamber is heated by a first heating furnace;
preferably, the silicon oxide reaction production unit further comprises a feed bin, and a discharge hole of the feed bin is connected with the vacuum reaction chamber;
preferably, the bin is connected with the vacuum reaction chamber through a first valve;
preferably, the deposition reaction chamber is heated by a second heating furnace;
preferably, the discharge port of the vacuum reaction chamber is connected with the feed port of the deposition reaction chamber through a conveying device, and the discharge port of the deposition reaction chamber is the discharge port of the silicon oxide reaction generating unit.
3. The production system according to claim 1 or 2, wherein the fluidized bed device of the fluidized crushing unit is a fluidized bed jet mill, and a feed inlet of the fluidized bed jet mill is connected with a discharge outlet of the silica reaction generating unit;
preferably, the feed inlet of the fluidized bed jet mill is connected with the discharge outlet of the silica reaction generating unit through a second valve;
preferably, the fluidization crushing unit further comprises a powder sieving device;
preferably, a discharge port of the fluidized bed jet mill is connected with a feed port of the powder screening device;
preferably, the discharge port of the powder screening device is divided into two paths, one path returns to the feed port of the fluid bed jet mill, and the other path is used as the discharge port of the fluid crushing unit.
4. A production system according to any one of claims 1-3, wherein the fluidized bed apparatus of the fluidized coating unit further comprises a third heating furnace for heating the fluidized bed coating reaction chamber, the feed inlet of the fluidized bed coating reaction chamber being connected to the discharge outlet of the fluidized crushing unit;
preferably, the feed inlet of the fluidized bed coating reaction chamber is connected with the discharge port of the fluidization breaking unit through a third valve;
preferably, the fluidized bed coating reaction chamber is provided with a fluidization gas inlet, a coating gas inlet, a tail gas outlet and a product outlet;
preferably, the fluidization gas inlet and the cladding gas inlet are respectively and independently arranged at the bottom of the fluidized bed cladding reaction chamber, and are respectively connected with a fluidization gas inlet pipe and a carbon source gas inlet pipe;
preferably, the fluidized bed coating reaction chamber is a vertical fluidized bed;
preferably, the fluidization coating unit further comprises a tail gas device connected with the tail gas outlet;
preferably, the fluidized coating unit further comprises a product collecting device connected to the product outlet.
5. A method for producing a silicon anode material, characterized by using the production system according to any one of claims 1 to 4, comprising the steps of:
(1) Putting a silicon oxide raw material into a vacuum reaction chamber, and performing a first heating reaction under vacuum to obtain silicon oxide vapor; simultaneously, the deposition reaction chamber and the fluidized bed coating reaction chamber are heated to a preset temperature and are insulated;
(2) Delivering the silica vapor obtained in the step (1) into the deposition reaction chamber, and performing a second heating reaction to obtain massive silica;
(3) Conveying the massive silica obtained in the step (2) into a fluidized bed device of a fluidization crushing unit for airflow crushing to obtain granular silica;
(4) And (3) conveying the granular silicon oxide obtained in the step (3) to a fluidized bed coating reaction chamber, introducing fluidizing gas to fluidize the granular silicon oxide, and introducing coating gas to carry out gas-phase carbon coating to obtain the silicon anode material.
6. The method according to claim 5, wherein the process of charging the silicon oxide raw material into the vacuum reaction chamber in the step (1) is controlled by a first valve;
preferably, the temperature of the first heating reaction of step (1) is controlled by a first heating furnace;
preferably, the vacuum degree of the vacuum in the step (1) is 0.01-100 Pa;
preferably, the temperature of the first heating reaction in the step (1) is 1100-1600 ℃ and the time is 4-24 hours;
preferably, the process of delivering the bulk silica obtained in the step (2) to the fluidized bed device of the fluidization and crushing unit in the step (2) is controlled by a second valve;
preferably, the temperature of the second heating reaction of step (2) is controlled by a second heating furnace;
preferably, the temperature of the second heating reaction in the step (2) is 500-900 ℃ and the time is 2-8 h;
preferably, the process of delivering the granular silicon oxide obtained in the step (3) to the fluidized bed coating reaction chamber in the step (4) is controlled by a third valve;
preferably, the temperature of the gaseous carbon coating of step (4) is controlled by a third heating furnace;
preferably, the temperature of the gas-phase carbon coating in the step (4) is 600-1000 ℃ and the time is 0.5-2 h.
7. The production method according to claim 5 or 6, wherein the fluidized bed device of the fluidized crushing unit in the step (3) is a fluidized bed jet mill, and when bulk silica is fed into the fluidized bed jet mill for jet crushing, the bulk silica is fed into a powder sieving device, so that coarse silica particles which have not passed sieving are returned to the fluidized bed jet mill for secondary crushing treatment; conveying the sieved granular silicon oxide to a fluidized bed coating reaction chamber;
preferably, the particle size of the sieved granular silicon oxide is 1-20 μm;
preferably, the silicon anode material obtained in the step (4) is collected and stored through a product collecting device, and tail gas generated by the fluidized bed coating reaction chamber is collected and post-treated through a tail gas device;
preferably, the fluidizing gas of step (4) comprises nitrogen and/or argon;
preferably, the coating gas of step (4) comprises any one or a combination of at least two of methane, ethylene, acetylene or propylene;
preferably, in the step (4), the volume of the coating gas is 5% -30% based on 100% of the total volume of the fluidization gas and the coating gas;
preferably, in the step (4), the total gas flow rate of the fluidizing gas and the coating gas is 0.1 to 2m/s.
8. The production method according to any one of claims 5 to 7, characterized in that the production method comprises the steps of:
(1) Opening a first valve, closing a second valve and a third valve, putting the silicon oxide raw material into a vacuum reaction chamber, vacuumizing the vacuum reaction chamber after the first valve is closed to enable the vacuum degree to reach 0.01-100 Pa, lifting the temperature of the vacuum reaction chamber to 1100-1600 ℃ through a first heating furnace, and performing a first heating reaction for 4-24 hours to obtain silicon oxide steam; simultaneously, the deposition reaction chamber and the fluidized bed coating reaction chamber are respectively heated to a preset temperature through a second heating furnace and a third heating furnace and are insulated;
(2) Conveying the silica vapor obtained in the step (1) to a deposition reaction chamber, lifting the temperature of the deposition reaction chamber to 500-900 ℃ by a second heating furnace, and performing a second heating reaction for 2-8 h to obtain massive silica;
(3) Opening a second valve, conveying the massive silica obtained in the step (2) into a fluid bed jet milling device of a fluid-bed crushing unit, closing the second valve, enabling the massive silica to enter a powder screening device after jet milling treatment, returning the coarse granular silica which is not screened after screening treatment into the fluid bed jet milling device for secondary milling treatment, wherein the granularity of the granular silica which is screened is 1-20 mu m;
(4) Opening a third valve, sending the sieved granular silica particles with qualified granularity into a fluidized bed coating reaction chamber, closing the third valve, introducing fluidizing gas into the fluidized bed coating reaction chamber, wherein the fluidizing gas comprises nitrogen and/or argon, fluidizing the silica particles, then introducing coating gas, wherein the coating gas comprises any one or a combination of at least two of methane, ethylene, acetylene and propylene, controlling the total volume of the fluidizing gas and the coating gas to be 100%, controlling the volume of the coating gas to be 5% -30%, controlling the total gas flow rate of the fluidizing gas and the coating gas to be 0.1-2 m/s, lifting the temperature of the fluidized bed coating reaction chamber to be 600-1000 ℃ through a third heating furnace, coating gas phase carbon for 0.5-2 h to obtain a silicon anode material, entering a product collecting device, and enabling tail gas to enter a tail gas device for post treatment.
9. A silicon negative electrode material obtained by the production method according to any one of claims 5 to 8.
10. Use of the silicon negative electrode material of claim 9 in an ion battery.
CN202310529638.3A 2023-05-11 2023-05-11 A kind of silicon anode material and its production system, production method and application Pending CN116544401A (en)

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CN113937259A (en) * 2021-09-07 2022-01-14 惠州市贝特瑞新材料科技有限公司 Preparation method and device of silicon monoxide for lithium ion battery and lithium ion battery

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CN109119627A (en) * 2018-08-28 2019-01-01 中南大学 A kind of preparation method and device of high performance silicon carbon based negative electrodes material
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