CN116401803A - Thermodynamic simulation method, device and storage medium of quantum chip packaging structure - Google Patents

Abstract

The invention discloses a thermodynamic simulation method, device and storage medium of a quantum chip packaging structure, comprising: converting the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model; setting the boundary of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure Conditions, the working environment of the quantum chip packaging structure includes known cold sources and empirical heat sources; set the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure; perform thermodynamic simulation on the thermodynamic simulation model based on boundary conditions and parameter conditions; get started From the simulation to the thermodynamic simulation results during which the temperature distribution of the quantum chip packaging structure is in a steady state; according to the thermodynamic simulation results, the heat transfer path of the internal structure of the quantum chip packaging structure is obtained. Through the above method, the present invention can scientifically and accurately obtain the real and effective heat transfer path of the internal structure of the quantum chip packaging structure, which can provide a basis for the optimization of the quantum chip packaging structure.

Description

Thermodynamic simulation method, device and storage medium of quantum chip packaging structure

technical field

The invention relates to the field of thermodynamic simulation, in particular to a thermodynamic simulation method, device and storage medium of a quantum chip packaging structure.

Background technique

The normal operation of quantum chips requires an extremely stable working environment. In order to avoid interference from the outside world, quantum chips need to be packaged and used. The purpose of the package is to provide the qubits with basic signal connections, good thermal contact, a stable ground plane, and basic shielding protection.

A good quantum chip packaging structure design can effectively reduce the temperature of the quantum chip when it is working, and an important basis for the design of the quantum chip packaging structure is the heat transfer path including the internal structure of the quantum chip packaging structure. In the prior art, the heat transfer path of the internal structure is judged by experience or experiment, but this method has disadvantages such as technical difficulty, high cost, long experiment time, unstable test environment and unreliable results, so there is an urgent need for a real An effective thermodynamic simulation method to obtain the heat transfer path of the internal structure of the quantum chip packaging structure.

Contents of the invention

The purpose of the present invention is to provide a thermodynamic simulation method, device and storage medium of a quantum chip packaging structure, so as to solve the problem that it is difficult to obtain the heat transfer path of the internal structure of the quantum chip packaging structure in the prior art, and to obtain the real The heat transfer path of the internal structure of the effective quantum chip packaging structure.

In order to solve the above technical problems, the present invention provides a thermodynamic simulation method of quantum chip packaging structure, including:

Convert the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model;

Setting the boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure, the working environment of the quantum chip packaging structure includes known cold sources and empirical heat sources;

Setting the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure;

Performing a thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions;

Acquiring the thermodynamic simulation results from the start of the simulation until the temperature distribution of the quantum chip packaging structure is in a steady state;

The heat transfer path of the internal structure of the quantum chip packaging structure is obtained according to the thermodynamic simulation results.

Preferably, it also includes:

Using the heat transfer path containing the quantum chip in the heat transfer path as the first heat transfer path;

Obtaining the absolute value of the temperature difference between the path node where the quantum chip is located and the first path node in the first heat transfer path as the first absolute value;

When the first absolute value is greater than the first threshold, the parameter condition is used as a target parameter to realize the optimization of the quantum chip packaging structure;

Wherein, the first path node is a path node in contact with a heat source.

Preferably, it also includes:

Using a heat transfer path that does not contain a quantum chip in the heat transfer path as a second heat transfer path;

Obtaining the absolute value of the heat difference between the last path node and the first path node in the second heat transfer path as the second absolute value;

When the second absolute value is less than a second threshold, the parameter condition is used as a target parameter;

Wherein, the first threshold is greater than or equal to the second threshold, and the last path node is a path node that touches the cold source.

Preferably, the step of acquiring, as the first absolute value, the absolute value of the temperature difference between the path node where the quantum chip is located and the first path node in the first heat transfer path further includes:

Obtaining the absolute value of the temperature difference between the path node where the quantum chip is located and the last path node in the first heat transfer path as the third absolute value;

When the first absolute value is greater than the first threshold, the step of using the parameter condition as the target parameter specifically includes:

When the first absolute value is greater than a first threshold and the third absolute value is less than a third threshold, then using the parameter condition as a target parameter;

Wherein, the first threshold is greater than the third threshold.

Preferably, the judgment condition that the temperature distribution of the quantum chip packaging structure is in a steady state is:

The temperature at any place on the thermodynamic simulation model remains unchanged for a predetermined time.

Preferably, said empirical heat sources include ambient heat sources and Joule heat sources.

Preferably, the known cold source is applied at the bottom of the thermodynamic simulation model, and the empirical heat source is applied at the top or inside of the thermodynamic simulation model.

Preferably, the step of setting the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure specifically includes:

The parameter conditions of the thermodynamic simulation model are set according to the physical parameters of the quantum chip packaging structure and the contact thermal resistance between parts of the quantum chip packaging structure.

Preferably, the step of performing thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions specifically includes:

performing grid division on the thermodynamic simulation model;

A thermodynamic simulation is performed on the meshed thermodynamic simulation model based on the boundary conditions and the parameter conditions.

Preferably, the step of meshing the thermodynamic simulation model specifically includes:

Dividing the area corresponding to the quantum chip in the thermodynamic simulation model according to the first grid size;

Dividing the area corresponding to the predetermined range around the quantum chip in the thermodynamic simulation model according to the second grid size;

dividing other regions in the thermodynamic simulation model according to the third grid size;

Wherein, the third grid size is larger than the second grid size, and the second grid size is larger than the first grid size.

In order to solve the above technical problems, the present invention provides a thermodynamic simulation device for a quantum chip packaging structure, including: a model conversion module for converting a three-dimensional model of a quantum chip packaging structure into a thermodynamic simulation model;

The boundary setting module is used to set the boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure, and the working environment of the quantum chip packaging structure includes known cold sources and empirical heat sources;

A parameter setting module, configured to set the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure;

A simulation execution module, configured to perform thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions;

The result obtaining module is used to obtain the thermodynamic simulation results during the period from the start of the simulation until the temperature distribution of the quantum chip packaging structure is in a steady state;

The path obtaining module is used to obtain the heat transfer path of the internal structure of the quantum chip packaging structure according to the thermodynamic simulation results.

Preferably, it also includes:

A path selection module, configured to use the heat transfer path containing the quantum chip in the heat transfer path as the first heat transfer path;

A temperature difference acquisition module, configured to acquire the absolute value of the temperature difference between the path node where the quantum chip is located and the first path node in the first heat transfer path as the first absolute value;

A parameter selection module, configured to use the parameter condition as a target parameter when the first absolute value is greater than a first threshold, so as to optimize the packaging structure of the quantum chip;

Wherein, the first path node is a path node in contact with a heat source.

Preferably, the path selection module is further configured to use a heat transfer path that does not contain a quantum chip among the heat transfer paths as a second heat transfer path;

The temperature difference obtaining module is also used to obtain the absolute value of the heat difference between the last path node and the first path node in the second heat transfer path as the second absolute value;

The parameter selection module is further configured to use the parameter condition as a target parameter when the second absolute value is smaller than a second threshold;

Wherein, the first threshold is greater than or equal to the second threshold, and the last path node is a path node that touches the cold source.

Preferably, the temperature difference acquisition module is also used to acquire the absolute value of the temperature difference between the path node where the quantum chip is located and the last path node in the first heat transfer path as the third absolute value;

The parameter selection module is specifically configured to use the parameter condition as a target parameter when the first absolute value is greater than a first threshold and the third absolute value is less than a third threshold;

Wherein, the first threshold is greater than the third threshold.

In order to solve the above technical problems, the present invention provides a storage medium, in which a computer program is stored, and the computer program is set to execute any one of the aforementioned methods when running.

In order to solve the above technical problems, the present invention provides an electronic device, including a memory and a processor, wherein a computer program is stored in the memory, and the processor is configured to run the computer program to perform any of the aforementioned method.

Different from the situation in the prior art, after the present invention establishes the thermodynamic simulation model corresponding to the three-dimensional model of the quantum chip packaging structure, the boundary conditions and parameter conditions for thermodynamic simulation are set based on the working environment and physical parameters of the quantum chip packaging structure, and then Realize the thermodynamic simulation of the unsteady state process of the quantum chip packaging structure, so as to obtain the heat transfer path of the quantum chip packaging structure. The present invention can truly and effectively carry out the thermodynamic simulation of the unsteady state process of the quantum chip packaging structure, and obtain the heat transfer path of the internal structure of the quantum chip packaging structure, which is closer to reality through simulation, with lower cost, less time-consuming, and better results. Reliable, it can provide a basis for optimizing the packaging structure of quantum chips, and is conducive to providing a more stable working environment for quantum chips.

Description of drawings

Fig. 1 is a schematic flow chart of the thermodynamic simulation method of the quantum chip packaging structure provided by the first embodiment of the present invention;

FIG. 2 is a schematic flowchart of a thermodynamic simulation method for a quantum chip packaging structure provided by a second embodiment of the present invention.

FIG. 3 is a schematic flowchart of a thermodynamic simulation method for a quantum chip packaging structure provided by a third embodiment of the present invention.

FIG. 4 is a schematic structural diagram of a thermodynamic simulation device for a quantum chip packaging structure provided by a fourth embodiment of the present invention.

Detailed ways

The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use inaccurate scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right" etc. is based on the orientation or positional relationship shown in the drawings , is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

In the field of quantum computing, quantum chips are the core devices for data processing by quantum computers. Quantum chips have extremely strict requirements on the working environment and require an extremely stable working environment. To ensure the normal operation of the quantum chip. Therefore, the heat transfer path of the internal structure of the quantum chip packaging structure can help technicians understand and judge the working performance of the quantum chip more intuitively and accurately. However, since the working environment of the quantum chip is under extremely low temperature conditions, it is technically difficult to directly obtain the heat transfer path of the internal structure of the quantum chip packaging structure, and the cost is high and the test environment is unstable. Most of them are judged by experience, and the obtained results have the problem of inaccurate parameters.

In view of this, the embodiment of the present invention provides a thermodynamic simulation method of the quantum chip packaging structure, which can overcome the disadvantages of the existing technology, and can obtain the real and effective heat transfer path of the internal structure of the quantum chip packaging structure more scientifically and accurately. It provides a basis for the optimization of quantum chip packaging structure.

Please refer to Fig. 1, the first embodiment of the present invention provides a thermodynamic simulation method of a quantum chip packaging structure, the thermodynamic simulation method includes:

S11: Convert the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model.

S12: Set the boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure. The working environment of the quantum chip packaging structure includes known cold sources and empirical heat sources.

In this embodiment, empirical heat sources include ambient heat sources and Joule heat sources. The known cold source is applied at the bottom of the thermodynamic simulation model, and the empirical heat source is applied at the top or inside of the thermodynamic simulation model.

Specifically, according to the actual requirements of the quantum chip for the working environment, the quantum chip packaging structure is generally located in the 20mK temperature zone layer of the dilution refrigerator to maintain the normal operation of the quantum chip, so the temperature of the known cold source is usually set to 20mK. According to the installation position of the quantum chip package structure in the dilution refrigerator, a known cold source is usually applied at the bottom of the thermodynamic simulation model.

Empirical heat sources are applied on top of or inside the thermodynamic simulation model. The ambient heat source will be introduced into the package structure of the quantum chip through the terminal, and the signal line is also inside the package structure of the quantum chip. The Joule heat source is usually obtained by calculating the heat generated by the signal line through Joule's law, so the empirical heat source is usually applied to the thermodynamic simulation. The interior of the model. As for the specific location of the empirical heat source applied inside the thermodynamic simulation model, it needs to be determined according to actual needs.

S13: Set the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure.

Among them, the physical property parameters of the quantum chip packaging structure include the physical property parameters of the materials of each part of the quantum chip packaging structure, and the physical property parameters include thermal conductivity and specific heat capacity. For example, in one application, the package body material of the quantum chip package structure is aluminum, the material of the quantum chip is silicon, and the material of the heat conduction member is copper, and the temperature of the cold source is known to be 20mK. The thermal conductivity and specific heat capacity of copper are used as the parameter conditions of the simulation. For the accuracy of the simulation results.

S14: Perform thermodynamic simulation on the thermodynamic simulation model based on boundary conditions and parameter conditions.

S15: Obtain a thermodynamic simulation result during the period from the start of the simulation until the temperature distribution of the quantum chip package structure is in a steady state.

Among them, the process from the start of the simulation until the temperature distribution of the quantum chip packaging structure is in a steady state is an unsteady state process, and the thermodynamic simulation results during this period are the simulation results of the unsteady state process of the quantum chip packaging structure. The judgment condition for the temperature distribution of the quantum chip package structure to be in a steady state is that the temperature at any point on the thermodynamic simulation model remains unchanged for a predetermined time.

S16: Obtain the heat transfer path of the internal structure of the quantum chip packaging structure according to the thermodynamic simulation results.

Among them, the thermodynamic simulation results include the temperature change of each part of the quantum chip packaging structure, combined with the temperature change of each part of the quantum chip packaging structure and the contact relationship between each part, the heat transfer path of the internal structure of the quantum chip packaging structure can be obtained. For example, the part of the structure whose temperature rises earlier is the earlier path node in the heat transfer path.

The thermodynamic simulation method of the quantum chip packaging structure provided by the embodiment of the present invention, compared with the prior art, establishes a thermodynamic simulation model of the quantum chip packaging structure, based on the working environment of the quantum chip packaging structure and the physical property parameter setting of the quantum chip packaging structure Boundary conditions and parameter conditions for thermodynamic simulation, and then truly and effectively realize the thermodynamic simulation of the quantum chip packaging structure. Based on the thermodynamic simulation results, the heat transfer path of the internal structure of the quantum chip packaging structure can be obtained. Compared with the existing technology, The quantum chip packaging structure is adjusted through artificial experience, and the simulation is closer to reality, with lower cost, less time-consuming, and more reliable results, which can provide a basis for the optimization of the quantum chip packaging structure and help shorten the research and development of the quantum chip packaging structure. cost and design cycle.

In this embodiment, the step of performing thermodynamic simulation on the thermodynamic simulation model based on boundary conditions and parameter conditions, that is, step S14 specifically includes:

Mesh the thermodynamic simulation model;

Based on the boundary conditions and parameter conditions, the thermodynamic simulation is carried out on the thermodynamic simulation model after meshing.

Since the heat transfer research of quantum chips is the key research object, in order to highlight the heat transfer changes of quantum chips, the steps of meshing the thermodynamic simulation model include:

Divide the area corresponding to the quantum chip in the thermodynamic simulation model according to the first grid size;

dividing the area corresponding to the predetermined range around the quantum chip in the thermodynamic simulation model according to the second grid size;

Divide other areas in the thermodynamic simulation model according to the third grid size;

Wherein, the third grid size is larger than the second grid size, and the second grid size is larger than the first grid size. Since in the actual simulation process, the simulation calculations related to the heat conduction of the quantum chip are the most complicated and rigorous, therefore, this grid division method can take into account both the accuracy of the simulation results and the efficiency of the simulation.

Please refer to Fig. 2, the second embodiment of the present invention provides a thermodynamic simulation method of a quantum chip packaging structure, the thermodynamic simulation method of the second embodiment includes all the technical features of the thermodynamic simulation method of the first embodiment, on this basis, also Include the following steps:

S17: Taking the heat transfer path including the quantum chip in the heat transfer path as the first heat transfer path.

Among them, the quantum chip packaging structure is to provide a good thermal contact for the quantum chip, therefore, the heat transfer path of the internal structure of the quantum chip packaging structure includes the heat transfer path containing the quantum chip. For example, the package structure of the quantum chip includes the quantum chip and the package base plate. The chip and the copper foil are connected by wires, the ambient heat source is applied to the upper surface of the PCB, and the Joule heat source is applied to the inside of the copper foil above the PCB. Then, after thermodynamic simulation, a heat transfer path containing a quantum chip is a wire——quantum chip - Encapsulation backplane.

For some quantum chip packaging structures with a relatively complex internal structure, there may be more path nodes before the node where the quantum chip contains the heat transfer path of the quantum chip.

S18: Obtain the absolute value of the temperature difference between the path node where the quantum chip is located and the first path node in the first heat transfer path as the first absolute value, wherein the first path node is a path node contacting the heat source.

Among them, the temperature of each path node on the first heat transfer path is determined when the temperature distribution of the quantum chip packaging structure is in a steady state, and the temperature difference between the path node where the quantum chip is located and the first path node reflects the empirical heat source The degree of heat transfer to the quantum chip. As in the previous example, the first path node is the leader. Leads are exposed to an empirical heat source.

S19: When the first absolute value is greater than the first threshold, the parameter condition is used as the target parameter to realize the optimization of the package structure of the quantum chip.

Wherein, the first threshold can be set according to actual needs. If the first absolute value is greater than the first threshold, it indicates that the empirical heat source does not transfer or transfers little heat to the quantum chip after a period of time, and the design of the quantum chip packaging structure is ideal, and then the parameter condition can be used as the target parameter, with This is to realize the optimization of the quantum chip packaging structure and carry out subsequent experimental verification.

Please refer to Fig. 3, the third embodiment of the present invention provides a thermodynamic simulation method of quantum chip packaging structure, the thermodynamic simulation method of the third embodiment includes all technical features of the thermodynamic simulation method of the second embodiment, on this basis, also Include the following steps:

S20: Using a heat transfer path that does not contain a quantum chip in the heat transfer path as a second heat transfer path.

Wherein, the heat transfer path of the internal structure of the quantum chip packaging structure may further include a heat transfer path not containing the quantum chip in addition to the heat transfer path containing the quantum chip. As an example in the second embodiment, after thermodynamic simulation, a heat transfer path that does not contain a quantum chip is PCB—the copper foil under the PCB—the package bottom plate.

S21: Obtain an absolute value of a heat difference between the last path node and the first path node in the second heat transfer path as a second absolute value, wherein the last path node is a path node contacting the cold source.

Among them, the temperature of each path node on the second heat transfer path is also determined when the temperature distribution of the quantum chip package structure is in a steady state, and the temperature difference between the last path node and the first path node reflects the direction of the empirical heat source to The degree of heat transfer of quantum chips. As in the previous example, the first path node is PCB. The PCB is in contact with an empirical heat source, and the last path node is the package base plate, which is in contact with a known cold source.

S22: When the second absolute value is smaller than the second threshold, set the parameter condition as the target parameter, wherein the first threshold is greater than or equal to the second threshold.

Wherein, the second threshold can be set according to actual needs. If the second absolute value is less than the second threshold, it indicates that the empirical heat source transfers a lot or all of the heat to the package base plate after a period of time, so that the quantum chip is little or not affected by the empirical heat source, and the package structure design of the quantum chip It is more ideal, and then the parameter conditions can be used as the target parameters to realize the optimization of the quantum chip packaging structure and carry out subsequent experimental verification.

It should be noted that the steps S20, S21, S22 of the third embodiment and the steps S17, S18, S19 of the second embodiment may logically be parallel or sequential, that is, step S20 of the third embodiment , S21, S22 and steps S17, S18, S19 of the second embodiment can be performed one by one, or can be performed successively.

In this embodiment, the step of obtaining the absolute value of the temperature difference between the path node where the quantum chip is located and the first path node in the first heat transfer path as the first absolute value, that is, step S18 also includes:

Obtaining the absolute value of the temperature difference between the path node where the quantum chip is located and the last path node in the first heat transfer path as the third absolute value;

When the first absolute value is greater than the first threshold, the step of using the parameter condition as the target parameter, that is, step S19 specifically includes:

When the first absolute value is greater than the first threshold and the third absolute value is less than the third threshold, the parameter condition is used as the target parameter, wherein the first threshold is greater than the third threshold.

Wherein, the third threshold can be set according to actual needs. When considering the heat transfer of the quantum chip, not only should the empirical heat source not or rarely be transferred to the quantum chip, but also consider that the heat on the quantum chip can be transferred out quickly. If the third absolute value is less than the third threshold, it indicates that the heat on the quantum chip will be transferred out after a period of time, and the design of the quantum chip packaging structure is ideal, and then the parameter conditions can be used as the target parameters to realize the quantum The optimization of the chip packaging structure is carried out for subsequent experimental verification.

Please refer to Fig. 4, the fourth embodiment of the present invention provides a thermodynamic simulation device of a quantum chip packaging structure, the thermodynamic simulation device includes a model conversion module 11, a boundary setting module 12, a parameter setting module 13, a simulation execution module 14, and result acquisition module 15 and path acquisition module 16.

The model conversion module 11 is used to convert the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model.

The boundary setting module 12 is used to set the boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure, and the working environment of the quantum chip packaging structure includes known cold sources and empirical heat sources. In this embodiment, empirical heat sources include ambient heat sources and Joule heat sources. The known cold source is applied at the bottom of the thermodynamic simulation model, and the empirical heat source is applied at the top or inside of the thermodynamic simulation model. Specifically, according to the actual requirements of the quantum chip for the working environment, the quantum chip packaging structure is generally located in the 20mK temperature zone layer of the dilution refrigerator to maintain the normal operation of the quantum chip, so the temperature of the known cold source is usually set to 20mK. According to the installation position of the quantum chip package structure in the dilution refrigerator, a known cold source is usually applied at the bottom of the thermodynamic simulation model.

Empirical heat sources are applied on top of or inside the thermodynamic simulation model. The ambient heat source will be introduced into the package structure of the quantum chip through the terminal, and the signal line is also inside the package structure of the quantum chip. The Joule heat source is usually obtained by calculating the heat generated by the signal line through Joule's law, so the empirical heat source is usually applied to the thermodynamic simulation. The interior of the model. As for the specific location of the empirical heat source applied inside the thermodynamic simulation model, it needs to be determined according to actual needs.

The parameter setting module 13 is used to set the parameter conditions of the thermodynamic simulation model according to the physical parameters of the quantum chip packaging structure. Among them, the physical property parameters of the quantum chip packaging structure include the physical property parameters of the materials of each part of the quantum chip packaging structure, and the physical property parameters include thermal conductivity and specific heat capacity. For example, in one application, the packaging body material of the quantum chip packaging structure is aluminum, the material of the quantum chip is silicon, and the material of the heat conduction member is copper. The temperature of the cold source is known to be 20mK. The thermal conductivity and specific heat capacity of copper are used as the parameter conditions of the simulation. For the accuracy of the simulation results.

The simulation execution module 14 is used for performing thermodynamic simulation on the thermodynamic simulation model based on boundary conditions and parameter conditions.

The result obtaining module 15 is used to obtain the thermodynamic simulation results during the period from the start of the simulation to the time when the temperature distribution of the package structure of the quantum chip is in a steady state. Among them, the process from the start of the simulation until the temperature distribution of the quantum chip packaging structure is in a steady state is an unsteady state process, and the thermodynamic simulation results during this period are the simulation results of the unsteady state process of the quantum chip packaging structure. The judgment condition for the temperature distribution of the quantum chip package structure to be in a steady state is that the temperature at any point on the thermodynamic simulation model remains unchanged for a predetermined time.

The path obtaining module 16 is used to obtain the heat transfer path of the internal structure of the quantum chip packaging structure according to the thermodynamic simulation results. Among them, the thermodynamic simulation results include the temperature change of each part of the quantum chip packaging structure, combined with the temperature change of each part of the quantum chip packaging structure and the contact relationship between each part, the heat transfer path of the internal structure of the quantum chip packaging structure can be obtained. For example, the part of the structure whose temperature rises earlier is the earlier path node in the heat transfer path.

The thermodynamic simulation device of the quantum chip packaging structure provided by the embodiment of the present invention, compared with the prior art, establishes a thermodynamic simulation model of the quantum chip packaging structure, based on the working environment of the quantum chip packaging structure and the physical property parameter setting of the quantum chip packaging structure Boundary conditions and parameter conditions for thermodynamic simulation, and then truly and effectively realize the thermodynamic simulation of the quantum chip packaging structure. Based on the thermodynamic simulation results, the heat transfer path of the internal structure of the quantum chip packaging structure can be obtained. Compared with the existing technology, The quantum chip packaging structure is adjusted through artificial experience, and the simulation is closer to reality, with lower cost, less time-consuming, and more reliable results, which can provide a basis for the optimization of the quantum chip packaging structure and help shorten the research and development of the quantum chip packaging structure. cost and design cycle.

In this embodiment, the thermodynamic simulation device further includes a path selection module 17 , a temperature difference acquisition module 18 and a parameter selection module 19 .

The path selection module 17 is configured to use the heat transfer path containing the quantum chip among the heat transfer paths as the first heat transfer path. Among them, the quantum chip packaging structure is to provide a good thermal contact for the quantum chip, therefore, the heat transfer path of the internal structure of the quantum chip packaging structure includes the heat transfer path containing the quantum chip. For example, the package structure of the quantum chip includes the quantum chip and the package base plate. The chip and the copper foil are connected by wires, the ambient heat source is applied to the upper surface of the PCB, and the Joule heat source is applied to the inside of the copper foil above the PCB. Then, after thermodynamic simulation, a heat transfer path containing a quantum chip is a wire——quantum chip - Encapsulation backplane.

For some quantum chip packaging structures with a more complex internal structure, there may be more path nodes before the node where the quantum chip contains the heat transfer path of the quantum chip

The temperature difference acquisition module 18 is used to obtain the absolute value of the temperature difference between the path node where the quantum chip is located in the first heat transfer path and the temperature of the first path node as the first absolute value, wherein the first path node is the path contacting the heat source node. Among them, the temperature of each path node on the first heat transfer path is determined when the temperature distribution of the quantum chip packaging structure is in a steady state, and the temperature difference between the path node where the quantum chip is located and the first path node reflects the empirical heat source The degree of heat transfer to the quantum chip. As in the previous example, the first path node is the leader. Leads are exposed to an empirical heat source.

The parameter selection module 19 is configured to use the parameter condition as the target parameter when the first absolute value is greater than the first threshold, so as to realize the optimization of the package structure of the quantum chip. Wherein, the first threshold can be set according to actual needs. If the first absolute value is greater than the first threshold, it indicates that the empirical heat source does not transfer or transfers little heat to the quantum chip after a period of time, and the design of the quantum chip packaging structure is ideal, and then the parameter condition can be used as the target parameter, with This is to realize the optimization of the quantum chip packaging structure and carry out subsequent experimental verification.

In this embodiment, the path selection module 17 is further configured to use a heat transfer path that does not contain a quantum chip in the heat transfer path as the second heat transfer path. Wherein, the heat transfer path of the internal structure of the quantum chip packaging structure may further include a heat transfer path not containing the quantum chip in addition to the heat transfer path containing the quantum chip. As an example in the second embodiment, after thermodynamic simulation, a heat transfer path that does not contain a quantum chip is PCB—the copper foil under the PCB—the package bottom plate.

The temperature difference obtaining module 18 is also used to obtain the absolute value of the heat difference between the last path node and the first path node in the second heat transfer path as the second absolute value, wherein the last path node is the path contacting the cooling source node. Among them, the temperature of each path node on the second heat transfer path is also determined when the temperature distribution of the quantum chip package structure is in a steady state, and the temperature difference between the last path node and the first path node reflects the direction of the empirical heat source to The degree of heat transfer of quantum chips. As in the previous example, the first path node is PCB. The PCB is in contact with an empirical heat source, and the last path node is the package base plate, which is in contact with a known cold source.

The parameter selection module 19 is further configured to use the parameter condition as the target parameter when the second absolute value is smaller than a second threshold, wherein the first threshold is greater than or equal to the second threshold. Wherein, the second threshold can be set according to actual needs. If the second absolute value is less than the second threshold, it indicates that the empirical heat source transfers a lot or all of the heat to the package base plate after a period of time, so that the quantum chip is little or not affected by the empirical heat source, and the package structure design of the quantum chip It is more ideal, and then the parameter conditions can be used as the target parameters to realize the optimization of the quantum chip packaging structure and carry out subsequent experimental verification.

Further, the temperature difference acquisition module 17 is also used to acquire the absolute value of the temperature difference between the path node where the quantum chip is located and the last path node in the first heat transfer path as the third absolute value;

The parameter selection module 18 is specifically configured to use the parameter condition as the target parameter when the first absolute value is greater than the first threshold and the third absolute value is less than the third threshold, wherein the first threshold is greater than the third threshold.

Wherein, the third threshold can be set according to actual needs. When considering the heat transfer of the quantum chip, not only should the empirical heat source not or rarely be transferred to the quantum chip, but also consider that the heat on the quantum chip can be transferred out quickly. If the third absolute value is less than the third threshold, it indicates that the heat on the quantum chip will be transferred out after a period of time, and the design of the quantum chip packaging structure is ideal, and then the parameter conditions can be used as the target parameters to realize the quantum The optimization of the chip packaging structure is carried out for subsequent experimental verification.

The present invention also provides a storage medium, in which a computer program is stored, and the computer program is configured to execute the method in the first embodiment, the second embodiment or the third embodiment when running.

Specifically, in this embodiment, the above-mentioned storage medium may include but not limited to: U disk, read-only memory (Read-Only Memory, ROM for short), random access memory (Random Access Memory, RAM for short), mobile Various media that can store computer programs, such as hard disks, magnetic disks, or optical disks.

The present invention also provides an electronic device, including a memory and a processor, wherein a computer program is stored in the memory, and the processor is configured to run the computer program to execute any one of the foregoing first embodiment, second embodiment or third embodiment method in .

Specifically, the memory and the processor can be connected through a data bus. In addition, the above-mentioned electronic device may further include a transmission device and an input-output device, wherein the transmission device is connected to the above-mentioned processor, and the input-output device is connected to the above-mentioned processor.

In the description of this specification, description with reference to the terms "one embodiment", "some embodiments", "example" or "specific example" means that a specific feature, structure, material or characteristic described in connection with the embodiment or example Included in at least one embodiment or example of the invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

The foregoing are only preferred embodiments of the present invention, and do not limit the present invention in any way. Any person skilled in the technical field, within the scope of the technical solution of the present invention, makes any form of equivalent replacement or modification to the technical solution and technical content disclosed in the present invention, which does not depart from the technical solution of the present invention. The content still belongs to the protection scope of the present invention.

Claims (16)

1. The thermodynamic simulation method of the quantum chip packaging structure is characterized by comprising the following steps of:

converting the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model;

setting boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure, wherein the working environment of the quantum chip packaging structure comprises a known cold source and an empirical heat source;

setting parameter conditions of the thermodynamic simulation model according to physical parameters of the quantum chip packaging structure;

performing thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions;

obtaining thermodynamic simulation results from the start of simulation to the time when the temperature distribution of the quantum chip packaging structure is in a steady state;

and acquiring a heat transfer path of the internal structure of the quantum chip packaging structure according to the thermodynamic simulation result.

2. The thermodynamic simulation method of claim 1, further comprising:

taking a heat transfer path containing a quantum chip in the heat transfer path as a first heat transfer path;

acquiring an absolute value of a difference value between a path node where a quantum chip is located in the first heat transfer path and a first path node as a first absolute value;

when the first absolute value is larger than a first threshold, taking the parameter condition as a target parameter to realize the optimization of the quantum chip packaging structure;

wherein the first path node is a path node contacting a heat source.

3. The thermodynamic simulation method of claim 2, further comprising:

taking a heat transfer path which does not contain a quantum chip in the heat transfer paths as a second heat transfer path;

acquiring an absolute value of a difference value of heat between a last path node and a first path node in the second heat transfer path as a second absolute value;

when the second absolute value is smaller than a second threshold value, taking the parameter condition as a target parameter;

the first threshold value is greater than or equal to the second threshold value, and the last path node is a path node contacting the cold source.

4. The thermodynamic simulation method according to claim 2, wherein the step of obtaining, as the first absolute value, the absolute value of the difference between the temperatures of the path node where the quantum chip is located and the first path node in the first heat transfer path further comprises:

acquiring an absolute value of a difference value between the temperature of a path node where the quantum chip is located and the temperature of a last path node in the first heat transfer path as a third absolute value;

the step of taking the parameter condition as the target parameter specifically includes:

when the first absolute value is greater than a first threshold and the third absolute value is less than a third threshold, taking the parameter condition as a target parameter;

wherein the first threshold is greater than the third threshold.

5. The thermodynamic simulation method according to claim 1, wherein the decision condition that the temperature distribution of the quantum chip package structure is in a steady state is:

the temperature at any point on the thermodynamic simulation model remains unchanged for a predetermined time.

6. The thermodynamic simulation method according to any one of claims 1 to 5, wherein the empirical heat source comprises an ambient heat source and a joule heat source.

7. The thermodynamic simulation method according to claim 6, wherein the known cold source is applied at the bottom of the thermodynamic simulation model and the empirical heat source is applied at the top or inside of the thermodynamic simulation model.

8. The thermodynamic simulation method according to any one of claims 1 to 5, wherein the step of setting parameter conditions of the thermodynamic simulation model according to physical property parameters of the quantum chip package structure specifically comprises:

and setting parameter conditions of the thermodynamic simulation model according to physical parameters of the quantum chip packaging structure and contact thermal resistance among all parts of the quantum chip packaging structure.

9. The thermodynamic simulation method according to any one of claims 1 to 5, wherein the step of performing thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions specifically comprises:

performing grid division on the thermodynamic simulation model;

and carrying out thermodynamic simulation on the thermodynamic simulation model after grid division based on the boundary conditions and the parameter conditions.

10. The thermodynamic simulation method according to claim 9, wherein the step of meshing the thermodynamic simulation model specifically comprises:

dividing the region corresponding to the quantum chip in the thermodynamic simulation model according to a first grid size;

dividing the region corresponding to the preset range around the quantum chip in the thermodynamic simulation model according to a second grid size;

dividing other areas in the thermodynamic simulation model according to a third grid size;

wherein the third mesh size is larger than the second mesh size, which is larger than the first mesh size.

11. A thermodynamic simulation device for a quantum chip package structure, comprising:

the model conversion module is used for converting the three-dimensional model of the quantum chip packaging structure into a thermodynamic simulation model;

the boundary setting module is used for setting boundary conditions of the thermodynamic simulation model according to the working environment of the quantum chip packaging structure, wherein the working environment of the quantum chip packaging structure comprises a known cold source and an empirical heat source;

the parameter setting module is used for setting parameter conditions of the thermodynamic simulation model according to physical property parameters of the quantum chip packaging structure;

the simulation execution module is used for carrying out thermodynamic simulation on the thermodynamic simulation model based on the boundary conditions and the parameter conditions;

the result acquisition module is used for acquiring thermodynamic simulation results from the start of simulation to the time when the temperature distribution of the quantum chip packaging structure is in a steady state;

and the path acquisition module is used for acquiring a heat transfer path of the internal structure of the quantum chip packaging structure according to the thermodynamic simulation result.

12. The thermodynamic simulation apparatus according to claim 11, further comprising:

the path selection module is used for taking a heat transfer path containing a quantum chip in the heat transfer paths as a first heat transfer path;

the temperature difference acquisition module is used for acquiring an absolute value of a difference value between a path node where the quantum chip is positioned in the first heat transfer path and the temperature of the first path node as a first absolute value;

the parameter selection module is used for taking the parameter condition as a target parameter when the first absolute value is larger than a first threshold value so as to realize the optimization of the quantum chip packaging structure;

wherein the first path node is a path node contacting a heat source.

13. The thermodynamic simulation apparatus according to claim 12, wherein the path selection module is further configured to use a heat transfer path that does not contain a quantum chip in the heat transfer paths as a second heat transfer path;

the temperature difference acquisition module is further used for acquiring an absolute value of a difference value of heat between a last path node and a first path node in the second heat transfer path as a second absolute value;

the parameter selection module is further configured to take the parameter condition as a target parameter when the second absolute value is smaller than a second threshold value;

the first threshold value is greater than or equal to the second threshold value, and the last path node is a path node contacting the cold source.

14. The thermodynamic simulation device according to claim 12, wherein the temperature difference obtaining module is further configured to obtain, as a third absolute value, an absolute value of a difference between temperatures of a path node where the quantum chip is located and a last path node in the first heat transfer path;

the parameter selection module is specifically configured to take the parameter condition as a target parameter when the first absolute value is greater than a first threshold and the third absolute value is less than a third threshold;

wherein the first threshold is greater than the third threshold.

15. A storage medium having a computer program stored therein, wherein the computer program is arranged to perform the method of any of claims 1 to 10 when run.

16. An electronic device comprising a memory and a processor, wherein the memory has stored therein a computer program, the processor being arranged to run the computer program to perform the method of any of claims 1 to 10.

Images