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CN116318080A - comparator circuit - Google Patents

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CN116318080A
CN116318080A CN202111514382.6A CN202111514382A CN116318080A CN 116318080 A CN116318080 A CN 116318080A CN 202111514382 A CN202111514382 A CN 202111514382A CN 116318080 A CN116318080 A CN 116318080A
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transistor
current
node
circuit
comparator circuit
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肖飞
于翔
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Shengbang Microelectronics Suzhou Co ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K5/00Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

本发明公开了一种比较器电路,包括:输入级电路,接收第一输入电压以及第二输入电压,用于将所述第一输入电压和所述第二输入电压比较,并将比较信号提供至第一节点;输出级电路,与所述第一节点连接,用于根据所述第一节点的电位产生输出电压信号;限流钳位电路,与所述输出级电路连接,用于在所述输出电压信号为逻辑高电平时,将所述输出级电路的第一静态电流限制在预设电流,从而提供一种响应速度快且功耗低的比较器电路。

Figure 202111514382

The invention discloses a comparator circuit, comprising: an input stage circuit, receiving a first input voltage and a second input voltage, for comparing the first input voltage with the second input voltage, and providing a comparison signal to the first node; an output stage circuit, connected to the first node, for generating an output voltage signal according to the potential of the first node; a current-limiting clamp circuit, connected to the output stage circuit, for When the output voltage signal is at a logic high level, the first quiescent current of the output stage circuit is limited to a preset current, thereby providing a comparator circuit with fast response and low power consumption.

Figure 202111514382

Description

比较器电路comparator circuit

技术领域technical field

本发明涉及集成电路技术领域,特别涉及一种比较器电路。The invention relates to the technical field of integrated circuits, in particular to a comparator circuit.

背景技术Background technique

比较器电路是一种常用的信号处理电路,能够将输入电压与参考电压进行比较,并将比较的结果输出,其输出的结果有逻辑高电平和逻辑低电平两种状态。在自动控制及自动测量系统中,常常将比较器电路应用于越限报警、模数转换以及各种非正弦波的产生和变化等,因而比较器电路广泛应用于通信、PC、消费、汽车和工业等领域。A comparator circuit is a commonly used signal processing circuit that can compare an input voltage with a reference voltage and output the comparison result. The output result has two states of logic high level and logic low level. In automatic control and automatic measurement systems, comparator circuits are often used in limit alarms, analog-to-digital conversion, and the generation and change of various non-sine waves, so comparator circuits are widely used in communications, PC, consumer, automotive and industry and other fields.

许多应用场景下对比较器电路的响应速度有一定要求,例如在模数转换器中,比较器电路的性能能够决定模数转换器整体性能的优劣。现有技术大多采用增加功耗的方法提高比较器电路的响应速度,不仅限制了比较器电路的应用场景,还增加电路或者系统的整体功耗。In many application scenarios, there are certain requirements for the response speed of the comparator circuit. For example, in an analog-to-digital converter, the performance of the comparator circuit can determine the overall performance of the analog-to-digital converter. In the prior art, the method of increasing power consumption is mostly used to increase the response speed of the comparator circuit, which not only limits the application scenarios of the comparator circuit, but also increases the overall power consumption of the circuit or system.

因此,期待一种改进的比较器电路,能够解决现有技术中响应速度快和功耗低不可兼得的问题。Therefore, an improved comparator circuit is expected to solve the problem of incompatibility between fast response speed and low power consumption in the prior art.

发明内容Contents of the invention

鉴于上述问题,本发明的目的在于提供一种响应速度快且功耗低的比较器电路。In view of the above problems, an object of the present invention is to provide a comparator circuit with fast response and low power consumption.

根据本发明的一方面,提供一种比较器电路,包括:输入级电路,接收第一输入电压以及第二输入电压,用于将所述第一输入电压和所述第二输入电压比较,并将比较信号提供至第一节点;输出级电路,与所述第一节点连接,用于根据所述第一节点的电位产生输出电压信号;限流钳位电路,与所述输出级电路连接,用于在所述输出电压信号为逻辑高电平时,将所述输出级电路的第一静态电流限制在预设电流。According to an aspect of the present invention, a comparator circuit is provided, including: an input stage circuit receiving a first input voltage and a second input voltage for comparing the first input voltage with the second input voltage, and The comparison signal is provided to the first node; the output stage circuit is connected to the first node, and is used to generate an output voltage signal according to the potential of the first node; a current-limiting clamp circuit is connected to the output stage circuit, It is used for limiting the first quiescent current of the output stage circuit to a preset current when the output voltage signal is at logic high level.

可选地,所述输出电压信号为逻辑高电平时,所述预设电流与所述限流钳位电路的第二静态电流之比为n。Optionally, when the output voltage signal is at logic high level, the ratio of the preset current to the second quiescent current of the current limiting and clamping circuit is n.

可选地,所述输入级电路包括:第一电流源,所述第一电流源的第一端与电源电压连接;跨导放大器,所述跨导放大器的正电源端与所述第一电流源的第二端连接,两输入端分别接收所述第一输入电压以及所述第二输入电压,输出端将与所述第一输入电压和所述第二输入电压相关的比较信号提供至所述第一节点。Optionally, the input stage circuit includes: a first current source, the first end of the first current source is connected to a power supply voltage; a transconductance amplifier, a positive power supply end of the transconductance amplifier is connected to the first current source connected to the second terminal of the source, the two input terminals respectively receive the first input voltage and the second input voltage, and the output terminal provides a comparison signal related to the first input voltage and the second input voltage to the Describe the first node.

可选地,所述输出级电路包括:第二电流源,所述第二电流源的第一端与电源电压连接;第一晶体管,连接于所述第二电流源和地之间,所述第一晶体管的控制端连接至所述第一节点,其中,所述第二电流源与所述第一晶体管之间的公共节点用于产生所述输出电压信号。Optionally, the output stage circuit includes: a second current source, the first terminal of the second current source is connected to a power supply voltage; a first transistor is connected between the second current source and ground, and the A control terminal of the first transistor is connected to the first node, wherein a common node between the second current source and the first transistor is used to generate the output voltage signal.

可选地,所述限流钳位电路包括:第三电流源,其第一端与所述电源电压连接;第二晶体管,连接于所述第三电流源的第二端和所述第一节点之间,所述第二晶体管的控制端与偏置电压连接;以及第三晶体管,连接于所述第三电流源的第二端和地之间,所述第三晶体管的控制端与所述第一节点连接。Optionally, the current limiting and clamping circuit includes: a third current source, the first end of which is connected to the power supply voltage; a second transistor, connected to the second end of the third current source and the first between the nodes, the control terminal of the second transistor is connected to the bias voltage; and the third transistor is connected between the second terminal of the third current source and ground, the control terminal of the third transistor is connected to the The first node is connected.

可选地,所述预设电流与所述第二静态电流之比等于所述第一晶体管的晶体管尺寸与所述第三晶体管的晶体管尺寸之比。Optionally, a ratio of the preset current to the second quiescent current is equal to a ratio of a transistor size of the first transistor to a transistor size of the third transistor.

可选地,所述第二晶体管主要用于将所述第一节点的电位钳位于所述第一晶体管的栅源电压。Optionally, the second transistor is mainly used to clamp the potential of the first node to the gate-source voltage of the first transistor.

可选地,可通过调整所述第三电流源的大小和/或所述第一晶体管的晶体管尺寸与所述第三晶体管的晶体管尺寸之比改变所述预设电流。Optionally, the preset current can be changed by adjusting the size of the third current source and/or the ratio of the transistor size of the first transistor to the transistor size of the third transistor.

可选地,所述第一晶体管和所述第三晶体管选自N型场效应管,所述第二晶体管选自P型场效应管。Optionally, the first transistor and the third transistor are selected from N-type field effect transistors, and the second transistor is selected from P-type field effect transistors.

综上,本发明实施例的比较器电路通过增加第三电流源能够加快比较器电路输出端的充放电速度,令比较器电路的输出电压信号能够快速响应第一输入电压和第二输入电压的变化从而翻转。进一步地,增加第一电流源以及第二晶体管,使第二晶体管、第三晶体管和第一电流源形成限流环,使得流经第三晶体管的电流与流经第二晶体管的电流之比为n,最终比较电路的静态电流与第三电流源无关,在提高比较器电路的响应速度的同时,没有增加额外功耗,实现了一种响应速度快且功耗低的比较器电路。To sum up, the comparator circuit of the embodiment of the present invention can increase the charging and discharging speed of the output terminal of the comparator circuit by adding the third current source, so that the output voltage signal of the comparator circuit can quickly respond to the change of the first input voltage and the second input voltage thereby flipping. Further, the first current source and the second transistor are added, so that the second transistor, the third transistor and the first current source form a current limiting loop, so that the ratio of the current flowing through the third transistor to the current flowing through the second transistor is n, the quiescent current of the final comparison circuit has nothing to do with the third current source, while improving the response speed of the comparator circuit, no additional power consumption is added, and a comparator circuit with fast response speed and low power consumption is realized.

可选地,第一晶体管导通后,将比较信号钳位在栅源电压附近,当第一输入电压大于第二输入电压时,比较信号的电平从第三晶体管的栅源电压开始上升,使输出电压的翻转更快,进一步提高比较器电路的响应速度。Optionally, after the first transistor is turned on, the comparison signal is clamped near the gate-source voltage, and when the first input voltage is greater than the second input voltage, the level of the comparison signal starts to rise from the gate-source voltage of the third transistor, The flipping of the output voltage is made faster, and the response speed of the comparator circuit is further improved.

附图说明Description of drawings

通过以下参照附图对本发明实施例的描述,本发明的上述以及其他目的、特征和优点将更为清楚,在附图中:Through the following description of the embodiments of the present invention with reference to the accompanying drawings, the above-mentioned and other objects, features and advantages of the present invention will be more clear, in the accompanying drawings:

图1示出了根据现有技术的比较器电路的电路结构图;Fig. 1 shows the circuit structure diagram according to the comparator circuit of prior art;

图2示出了根据本发明实施例的比较器电路的电路结构图。FIG. 2 shows a circuit structure diagram of a comparator circuit according to an embodiment of the present invention.

具体实施方式Detailed ways

以下将参照附图更详细地描述本发明的各种实施例。在各个附图中,相同的元件或者模块采用相同或类似的附图标记来表示。为了清楚起见,附图中的各个部分没有按比例绘制。Various embodiments of the invention will be described in more detail below with reference to the accompanying drawings. In the various drawings, the same elements or modules are denoted by the same or similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale.

应当理解,在以下的描述中,“电路”可包括单个或多个组合的硬件电路、可编程电路、状态机电路和/或能存储由可编程电路执行的指令的元件。当称元件或电路“连接到”另一元件或称元件或电路“连接在”两个节点之间时,它可以直接耦合或连接到另一元件或者可以存在中间元件,元件之间的连接可以是物理上的、逻辑上的,或者其结合。相反,当称元件“直接耦合到”或“直接连接到”另一元件时,意味着两者不存在中间元件。It should be understood that in the following description, "circuitry" may include single or multiple combined hardware circuits, programmable circuits, state machine circuits and/or elements capable of storing instructions for execution by programmable circuits. When an element or circuit is said to be "connected to" another element or is said to be "connected between" two nodes, it can be directly coupled or connected to the other element or there can be intervening elements and the connection between elements can be be physical, logical, or a combination thereof. In contrast, when an element is referred to as being "directly coupled to" or "directly connected to" another element, there are no intervening elements present.

同时,在本专利说明书及权利要求当中使用了某些词汇来指称特定的组件。本领域普通技术人员应当可理解,硬件制造商可能会用不同的名词来称呼同一个组件。本专利说明书及权利要求并不以名称的差异来作为区分组件的方式,而是以组件在功能上的差异来作为区分的准则。Also, certain terms are used in this patent specification and claims to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The patent specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing.

在本申请中,晶体管可以包括选自双极晶体管或场效应晶体管的一种,晶体管的第一端和第二端分别是电流路径上的高电位端和低电位端,控制端用于接收控制信号以控制晶体管的导通和关断。MOSFET(Metal-Oxide-Semiconductor Field-EffectTransistor,金属氧化物半导体场效应晶体管)包括第一端、第二端和控制端,在MOSFET的导通状态,电流从第一端流至第二端。P型MOSFET的第一端、第二端和控制端分别为源极、漏极和栅极,N型MOSFET的第一端、第二端和控制端分别为漏极、源极和栅极。In this application, the transistor may include one selected from a bipolar transistor or a field effect transistor. The first terminal and the second terminal of the transistor are the high potential terminal and the low potential terminal on the current path respectively, and the control terminal is used for receiving and controlling signal to turn the transistor on and off. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) includes a first terminal, a second terminal and a control terminal. In the on state of the MOSFET, current flows from the first terminal to the second terminal. The first terminal, the second terminal and the control terminal of the P-type MOSFET are respectively the source, the drain and the gate, and the first terminal, the second terminal and the control terminal of the N-type MOSFET are respectively the drain, the source and the gate.

此外,还需要说明的是,在本文中,诸如第一和第二之类的关系术语仅仅用来将一个实体或者操作与另一个实体或者操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其它变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。In addition, it should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that these entities or operations There is no such actual relationship or order between the operations. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements of or also include elements inherent in such a process, method, article, or device. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus comprising said element.

图1示出了根据现有技术的比较器电路的电路结构图。比较器电路100包括输入级电路110、晶体管Mp1以及输出级电路130。FIG. 1 shows a circuit structure diagram of a comparator circuit according to the prior art. The comparator circuit 100 includes an input stage circuit 110 , a transistor Mp1 and an output stage circuit 130 .

输入级电路110接收第一输入电压Vin和第二输入电压Vref,用于将第一输入电压Vin和第二输入电压Vref比较,并将比较信号Scomp提供至第一节点Q。The input stage circuit 110 receives the first input voltage Vin and the second input voltage Vref, is used for comparing the first input voltage Vin and the second input voltage Vref, and provides the comparison signal Scomp to the first node Q.

输出级电路130连接至第一节点Q,根据第一节点Q的电位产生输出电压信号Vout。The output stage circuit 130 is connected to the first node Q, and generates an output voltage signal Vout according to the potential of the first node Q.

晶体管Mp1根据输出电压信号Vout的电平值钳位第一节点Q的电平。The transistor Mp1 clamps the level of the first node Q according to the level value of the output voltage signal Vout.

具体的,输入级电路110包括跨导放大器111以及第一电流源Ib1。跨导放大器111的正电源端经过第一电流源Ib1连接至电源电压Vdd,负电源端接地,两输入端分别接收第一输入信号Vin和第二输入信号Vref,跨导放大器111用于比较第一输入信号Vin和第二输入信号Vref,并将比较信号Scomp提供至第一节点Q。Specifically, the input stage circuit 110 includes a transconductance amplifier 111 and a first current source Ib1. The positive power supply terminal of the transconductance amplifier 111 is connected to the power supply voltage Vdd through the first current source Ib1, the negative power supply terminal is grounded, and the two input terminals respectively receive the first input signal Vin and the second input signal Vref, and the transconductance amplifier 111 is used for comparing the first input signal Vin and the second input signal Vref. An input signal Vin and a second input signal Vref are provided, and a comparison signal Scomp is provided to the first node Q.

输出级电路130包括依次串联连接在电源电压Vdd和地之间的第二电流源Ib2和晶体管Mn1。第二电流源Ib2和晶体管Mn1的中间节点为比较器电路100的输出端,晶体管Mn1的控制端连接至第一节点Q,根据第一节点Q的电平产生输出电压信号Vout。The output stage circuit 130 includes a second current source Ib2 and a transistor Mn1 sequentially connected in series between a power supply voltage Vdd and ground. The intermediate node between the second current source Ib2 and the transistor Mn1 is the output terminal of the comparator circuit 100 , the control terminal of the transistor Mn1 is connected to the first node Q, and an output voltage signal Vout is generated according to the level of the first node Q.

在本实施例中,比较器电路100还包括电容Cp,第一端与电流源Ib2的第二端连接,第二端接地。In this embodiment, the comparator circuit 100 further includes a capacitor Cp, the first end of which is connected to the second end of the current source Ib2, and the second end is grounded.

晶体管Mp1的控制端与偏置电压Vb连接,第一端连接至比较器电路100的输出端,第二端与连接至第一节点Q,当输出电压Vout大于预设电压时,晶体管Mp1导通,从而将比较信号Scomp钳位于晶体管Mn1的栅源电压Vgs1。The control terminal of the transistor Mp1 is connected to the bias voltage Vb, the first terminal is connected to the output terminal of the comparator circuit 100, and the second terminal is connected to the first node Q. When the output voltage Vout is greater than the preset voltage, the transistor Mp1 is turned on. , so that the comparison signal Scomp is clamped at the gate-source voltage Vgs1 of the transistor Mn1.

现有技术采用增加第二电流源Ib2以加快充放电速率的方法,使得比较器电路100的输出电压Vout能够快速响应第一输入电压Vin和第二输入电压Vref的变化而翻转。The prior art adopts the method of increasing the second current source Ib2 to speed up the charging and discharging rate, so that the output voltage Vout of the comparator circuit 100 can quickly reverse in response to the changes of the first input voltage Vin and the second input voltage Vref.

然而当第一输入电压Vin大于第二输入电压Vref,输出电压Vout保持在逻辑高电平时,比较器电路100的静态电流Iq=Ib1+Ib2。可见,比较器电路100的静态电流Iq随着第二电流Ib2的增加而增大,第二电流Ib2的增加在提高比较器电路100响应速度的同时也增加了其静态功耗,限制了比较器电路100的应用场景,同时增加应用比较器电路100的电路或者系统的功耗。However, when the first input voltage Vin is greater than the second input voltage Vref and the output voltage Vout remains at a logic high level, the quiescent current Iq of the comparator circuit 100 = Ib1 + Ib2 . It can be seen that the quiescent current Iq of the comparator circuit 100 increases with the increase of the second current Ib2, and the increase of the second current Ib2 improves the response speed of the comparator circuit 100 while also increasing its quiescent power consumption, which limits the comparator The application scenarios of the circuit 100 increase the power consumption of the circuit or system to which the comparator circuit 100 is applied.

图2示出了根据本发明实施例的比较器电路的电路结构图。比较器电路200包括输入级电路210、限流钳位电路220以及输出级电路230。FIG. 2 shows a circuit structure diagram of a comparator circuit according to an embodiment of the present invention. The comparator circuit 200 includes an input stage circuit 210 , a current limiting and clamping circuit 220 and an output stage circuit 230 .

输入级电路210接收第一输入电压Vin和第二输入电压Vref,用于将第一输入电压Vin和第二输入电压Vref比较,并将比较信号Scomp提供至第一节点Q。The input stage circuit 210 receives the first input voltage Vin and the second input voltage Vref for comparing the first input voltage Vin and the second input voltage Vref, and provides the comparison signal Scomp to the first node Q.

输出级电路230与第一节点Q连接,用于根据第一节点Q的电位产生输出电压信号Vout。The output stage circuit 230 is connected to the first node Q, and is used for generating an output voltage signal Vout according to the potential of the first node Q.

限流钳位电路220,与输出级电路230以及第一节点Q连接,用于在输出电压信号Vout为逻辑高电平时,将输出级电路230对地的电流,即静态电流Iq1限制在预设电流。其中,当输出电压信号Vout为逻辑高电平时,预设电流与静态电流Iq2之比为n,静态电流Iq2即限流钳位电路220的对地电流。The current-limiting clamp circuit 220 is connected to the output stage circuit 230 and the first node Q, and is used to limit the current of the output stage circuit 230 to ground, that is, the quiescent current Iq1, to a preset value when the output voltage signal Vout is at a logic high level. current. Wherein, when the output voltage signal Vout is logic high level, the ratio of the preset current to the quiescent current Iq2 is n, and the quiescent current Iq2 is the ground current of the current limiting and clamping circuit 220 .

具体地,输入级电路210包括跨导放大器211以及电流源Ib1。跨导放大器211的正电源端经过电流源Ib1连接至电源电压Vdd,负电源端接地,两输入端分别接收第一输入信号Vin和第二输入信号Vref,跨导放大器211比较第一输入信号Vin和第二输入信号Vref,并将比较信号Scomp提供至第一节点Q。Specifically, the input stage circuit 210 includes a transconductance amplifier 211 and a current source Ib1. The positive power supply terminal of the transconductance amplifier 211 is connected to the power supply voltage Vdd through the current source Ib1, the negative power supply terminal is grounded, and the two input terminals respectively receive the first input signal Vin and the second input signal Vref, and the transconductance amplifier 211 compares the first input signal Vin and the second input signal Vref, and provide the comparison signal Scomp to the first node Q.

输出级电路230包括电流源Ib2和晶体管Mn1。电流源Ib2的第一端与电源电压Vdd连接。晶体管Mn1的第一端与电流源Ib2的第二端连接,用于产生输出电压信号Vout,第二端接地,控制端连接至第一节点Q。The output stage circuit 230 includes a current source Ib2 and a transistor Mn1. The first end of the current source Ib2 is connected to the power supply voltage Vdd. The first terminal of the transistor Mn1 is connected to the second terminal of the current source Ib2 for generating the output voltage signal Vout, the second terminal is grounded, and the control terminal is connected to the first node Q.

在本实施例中,比较器电路200还包括电容Cp,第一端与电流源Ib2的第二端连接,第二端接地。In this embodiment, the comparator circuit 200 further includes a capacitor Cp, the first end of which is connected to the second end of the current source Ib2, and the second end is grounded.

限流钳位电路220包括电流源Ib3、晶体管Mp1以及晶体管Mn2。电流源Ib3的第一端与电源电压Vdd连接。晶体管Mn2的第一端与电流源Ib3的第二端连接,第二端接地,控制端连接至第一节点Q。晶体管Mp1的第一端与电流源Ib3的第二端连接,第二端连接至第一节点Q,控制端与偏置电压Vb连接。The current-limiting clamp circuit 220 includes a current source Ib3 , a transistor Mp1 and a transistor Mn2 . The first end of the current source Ib3 is connected to the power voltage Vdd. The first end of the transistor Mn2 is connected to the second end of the current source Ib3, the second end is grounded, and the control end is connected to the first node Q. The first terminal of the transistor Mp1 is connected to the second terminal of the current source Ib3, the second terminal is connected to the first node Q, and the control terminal is connected to the bias voltage Vb.

其中,晶体管Mp1选自P型场效应管,晶体管Mn1和晶体管Mn2选自N型场效应管,并且晶体管Mn1与晶体管Mn2的晶体管尺寸之比为n,即晶体管Mn1的宽长比与晶体管Mn2的宽长比之比为n。Wherein, the transistor Mp1 is selected from a P-type field effect transistor, the transistor Mn1 and the transistor Mn2 are selected from an N-type field effect transistor, and the ratio of the transistor size of the transistor Mn1 to the transistor Mn2 is n, that is, the width-to-length ratio of the transistor Mn1 and the transistor Mn2 The ratio of width to length is n.

当第一输入电压Vin大于第二输入电压Vref,输出电压信号Vout保持在逻辑高电平时,跨导放大器211从第一节点Q吸收大小为ΔV*gm的电流从而将第一节点Q的电压拉低,晶体管Mn1和晶体管Mn2的控制端电压减小,两者的栅源电压减小,从而令流经二者的电流也减小。其中,ΔV表示第一输入电压Vin与第二输入电压Vref之差,gm为跨导放大器211的增益。此时,晶体管Mn1、晶体管Mn2和电流源Ib3形成限流环,流经晶体管Mn1的静态电流Iq1与流经晶体管Mn2的静态电流Iq2之比等于晶体管Mn1与晶体管Mn2的晶体管尺寸之比,即Iq1=n*Iq2。则比较器电路200的静态电流Iq=Ib1+Iq1+Ib3,其中Iq1=n*Iq2=n*(Ib3-ΔV*gm),化简可得比较信号Scomp比较器电路200的静态电流Iq=Ib1+(n+1)*Ib3-n*ΔV*gm。可见比较器电路200的静态电流Iq与第二电流源Ib2无关,虽然为了提高比较器电路200的响应速度增加电流源Ib2,但比较器电路200最终的静态电流功耗与电流源Ib2的大小无关,在没有增加额外静态电流功耗的前提下,提高了比较器电路200的响应速度。When the first input voltage Vin is greater than the second input voltage Vref and the output voltage signal Vout remains at a logic high level, the transconductance amplifier 211 absorbs a current of ΔV*gm from the first node Q to pull the voltage of the first node Q Low, the control terminal voltage of the transistor Mn1 and the transistor Mn2 decreases, and the gate-source voltage of the two decreases, so that the current flowing through the two also decreases. Wherein, ΔV represents the difference between the first input voltage Vin and the second input voltage Vref, and gm represents the gain of the transconductance amplifier 211 . At this time, the transistor Mn1, the transistor Mn2 and the current source Ib3 form a current limiting loop, and the ratio of the quiescent current Iq1 flowing through the transistor Mn1 to the quiescent current Iq2 flowing through the transistor Mn2 is equal to the ratio of the transistor sizes of the transistor Mn1 and the transistor Mn2, that is, Iq1 =n*Iq2. Then the quiescent current Iq=Ib1+Iq1+Ib3 of the comparator circuit 200, wherein Iq1=n*Iq2=n*(Ib3-ΔV*gm), the quiescent current Iq=Ib1+ (n+1)*Ib3-n*ΔV*gm. It can be seen that the quiescent current Iq of the comparator circuit 200 has nothing to do with the second current source Ib2. Although the current source Ib2 is increased in order to improve the response speed of the comparator circuit 200, the final quiescent current consumption of the comparator circuit 200 has nothing to do with the size of the current source Ib2. , the response speed of the comparator circuit 200 is improved without increasing the extra quiescent current consumption.

在一种可行的实施例中,晶体管Mn1和晶体管Mn2采用相同的晶体管尺寸,即静态电流Iq1与静态电流Iq2相等,最终比较器电路200的静态电流Iq=Ib1+2*Ib3-ΔV*gm。In a feasible embodiment, the transistor Mn1 and the transistor Mn2 adopt the same transistor size, that is, the quiescent current Iq1 is equal to the quiescent current Iq2, and finally the quiescent current Iq of the comparator circuit 200=Ib1+2*Ib3-ΔV*gm.

可选地,当晶体管Mp1导通时,第一节点Q的电位被钳位于晶体管Mn1的栅源电压Vgs1,当比较信号Scomp变化时,第一节点Q的电压无需从零开始上升,进一步加快比较器电路200的响应速度。Optionally, when the transistor Mp1 is turned on, the potential of the first node Q is clamped at the gate-source voltage Vgs1 of the transistor Mn1, and when the comparison signal Scomp changes, the voltage of the first node Q does not need to rise from zero, further speeding up the comparison The response speed of the device circuit 200.

综上,本发明实施例的比较器电路通过增加电流源Ib2能够加快比较器电路输出端的充放电速度,令比较器电路的输出电压信号能够快速响应第一输入电压和第二输入电压的变化从而翻转。进一步地,增加电流源Ib3以及晶体管Mn2,使晶体管Mn1、晶体管Mn2和电流源Ib3形成限流环,使得流经晶体管Mn1的电流与流经晶体管Mn2的电流之比为n,最终比较电路的静态电流与电流源Ib2无关,在提高比较器电路的响应速度的同时,没有增加额外功耗,实现了一种响应速度快且功耗低的比较器电路。To sum up, the comparator circuit of the embodiment of the present invention can increase the charging and discharging speed of the output terminal of the comparator circuit by increasing the current source Ib2, so that the output voltage signal of the comparator circuit can quickly respond to changes in the first input voltage and the second input voltage, thereby Flip. Further, increase the current source Ib3 and the transistor Mn2, so that the transistor Mn1, the transistor Mn2 and the current source Ib3 form a current limiting loop, so that the ratio of the current flowing through the transistor Mn1 to the current flowing through the transistor Mn2 is n, and finally the static state of the comparison circuit The current has nothing to do with the current source Ib2, while improving the response speed of the comparator circuit, no additional power consumption is added, and a comparator circuit with fast response speed and low power consumption is realized.

可选地,晶体管Mp1导通后,将比较信号钳位在晶体管Mn1的栅源电压附近,当第一输入电压大于第二输入电压时,比较信号的电平从晶体管Mn1的栅源电压开始上升,使输出电压的翻转更快,进一步提高比较器电路的响应速度。Optionally, after the transistor Mp1 is turned on, the comparison signal is clamped near the gate-source voltage of the transistor Mn1, and when the first input voltage is greater than the second input voltage, the level of the comparison signal starts to rise from the gate-source voltage of the transistor Mn1 , so that the output voltage flips faster, and further improves the response speed of the comparator circuit.

应当说明,本领域普通技术人员可以理解,本文中使用的与电路运行相关的词语“期间”、“当”和“当……时”不是表示在启动动作开始时立即发生的动作的严格术语,而是在其与启动动作所发起的反应动作(reaction)之间可能存在一些小的但是合理的一个或多个延迟,例如各种传输延迟等。本文中使用词语“大约”或者“基本上”意指要素值(element)具有预期接近所声明的值或位置的参数。然而,如本领域所周知的,总是存在微小的偏差使得该值或位置难以严格为所声明的值。本领域已恰当的确定了,至少百分之十(10%)(对于半导体掺杂浓度,至少百分之二十(20%))的偏差是偏离所描述的准确的理想目标的合理偏差。当结合信号状态使用时,信号的实际电压值或逻辑状态(例如“1”或“0”)取决于使用正逻辑还是负逻辑。It should be noted that those of ordinary skill in the art can understand that the words "during", "when" and "when" used herein related to circuit operation are not strict terms that represent actions that occur immediately when the start-up action starts, Rather, there may be some small but reasonable one or more delays between it and the reaction initiated by the start action, such as various transmission delays and the like. The words "about" or "substantially" are used herein to mean that the element has a parameter that is expected to be close to the stated value or position. However, as is well known in the art, there are always minor deviations which make it difficult for the values or positions to be exactly as stated. It has been well established in the art that deviations of at least ten percent (10%) (for semiconductor doping concentrations, at least twenty percent (20%)) are reasonable deviations from the exact ideal goal described. When used in conjunction with signal state, the actual voltage value or logic state (such as "1" or "0") of the signal depends on whether positive or negative logic is used.

依照本发明的实施例如上文,这些实施例并没有详尽叙述所有的细节,也不限制该发明仅为的具体实施例。显然,根据以上描述,可作很多的修改和变化。本说明书选取并具体描述这些实施例,是为了更好地解释本发明的原理和实际应用,从而使所属技术领域技术人员能很好地利用本发明以及在本发明基础上的修改使用。本发明的保护范围应当以本发明权利要求及其等效物所界定的范围为准。Embodiments according to the present invention are described above, and these embodiments do not exhaustively describe all details, nor limit the invention to only specific embodiments. Obviously many modifications and variations are possible in light of the above description. This description selects and specifically describes these embodiments in order to better explain the principles and practical applications of the present invention, so that those skilled in the art can make good use of the present invention and its modification on the basis of the present invention. The protection scope of the present invention shall be defined by the claims of the present invention and their equivalents.

Claims (9)

1. A comparator circuit comprising:
an input stage circuit receiving a first input voltage and a second input voltage, for comparing the first input voltage with the second input voltage and providing a comparison signal to a first node;
the output stage circuit is connected with the first node and is used for generating an output voltage signal according to the potential of the first node;
and the current-limiting clamp circuit is connected with the output stage circuit and is used for limiting the first quiescent current of the output stage circuit to a preset current when the output voltage signal is at a logic high level.
2. The comparator circuit of claim 1, wherein the ratio of the preset current to the second quiescent current of the current limiting clamp circuit is n when the output voltage signal is at a logic high level.
3. The comparator circuit of claim 1, wherein the input stage circuit comprises:
the first end of the first current source is connected with the power supply voltage;
and the positive power end of the transconductance amplifier is connected with the second end of the first current source, the two input ends respectively receive the first input voltage and the second input voltage, and the output end provides comparison signals related to the first input voltage and the second input voltage to the first node.
4. The comparator circuit of claim 2, wherein the output stage circuit comprises:
the first end of the second current source is connected with the power supply voltage;
a first transistor connected between the second current source and ground, a control terminal of the first transistor being connected to the first node,
wherein a common node between the second current source and the first transistor is used to generate the output voltage signal.
5. The comparator circuit of claim 4, wherein the current limiting clamp circuit comprises:
a third current source having a first end connected to the power supply voltage;
a second transistor connected between a second end of the third current source and the first node, a control end of the second transistor being connected to a bias voltage; and
and a third transistor connected between the second end of the third current source and ground, the control end of the third transistor being connected to the first node.
6. The comparator circuit of claim 5, wherein a ratio of the preset current to the second quiescent current is equal to a ratio of a transistor size of the first transistor to a transistor size of the third transistor.
7. The comparator circuit of claim 5, wherein the second transistor is primarily for clamping the potential of the first node to a gate-source voltage of the first transistor.
8. The comparator circuit of claim 5, the preset current being changeable by adjusting a size of the third current source and/or a ratio of a transistor size of the first transistor to a transistor size of the third transistor.
9. The comparator circuit of claim 5, wherein the first transistor and the third transistor are selected from an N-type field effect transistor and the second transistor is selected from a P-type field effect transistor.
CN202111514382.6A 2021-12-13 2021-12-13 comparator circuit Pending CN116318080A (en)

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Citations (6)

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US20170093399A1 (en) * 2015-09-30 2017-03-30 Silicon Laboratories Inc. High speed low current voltage comparator
CN109923493A (en) * 2016-12-05 2019-06-21 德州仪器公司 Voltage clamping circuit
CN110336546A (en) * 2019-07-19 2019-10-15 电子科技大学 A low power consumption high speed current comparator circuit
US10627838B1 (en) * 2018-12-31 2020-04-21 Texas Instruments Incorporated Comparator with adaptive sense voltage clamp
CN112564676A (en) * 2019-09-25 2021-03-26 圣邦微电子(北京)股份有限公司 Comparator circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102420594A (en) * 2011-12-15 2012-04-18 无锡中星微电子有限公司 Comparator
US20170093399A1 (en) * 2015-09-30 2017-03-30 Silicon Laboratories Inc. High speed low current voltage comparator
CN109923493A (en) * 2016-12-05 2019-06-21 德州仪器公司 Voltage clamping circuit
US10627838B1 (en) * 2018-12-31 2020-04-21 Texas Instruments Incorporated Comparator with adaptive sense voltage clamp
CN110336546A (en) * 2019-07-19 2019-10-15 电子科技大学 A low power consumption high speed current comparator circuit
CN112564676A (en) * 2019-09-25 2021-03-26 圣邦微电子(北京)股份有限公司 Comparator circuit

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