CN116301176A - Temperature-controlled current generation circuit, chip and electronic equipment - Google Patents

Abstract

Embodiments of the present disclosure provide a temperature-controlled current generating circuit. The temperature-controlled current generating circuit includes: a temperature-controlled voltage generating circuit, a voltage-controlled current generating circuit, and an output current adjusting circuit. Wherein the temperature-controlled voltage generation circuit is configured to: a temperature-controlled voltage is generated according to the temperature-controlled current output from the output current adjusting circuit and the present junction temperature. The voltage-controlled current generation circuit is configured to: and generating a voltage-controlled current when the temperature control voltage is equal to the first preset voltage. The output current regulation circuit is configured to: the temperature control current is regulated under control of the voltage control current. Wherein, the junction temperature initial value for adjusting the temperature control current is inversely proportional to the initial value of the temperature control current. When the current junction temperature is equal to or greater than a junction temperature starting value corresponding to an initial value of the temperature control current, the temperature control voltage is equal to a first preset voltage.

Description

Temperature-controlled current generation circuit, chip and electronic equipment

technical field

Embodiments of the present disclosure relate to the technical field of integrated circuits, and in particular, to temperature-controlled current generation circuits, chips and electronic devices.

Background technique

The functional characteristic that the charging current decreases linearly with the increase of the chip temperature has always been one of the difficulties in the circuit design of the linear charging chip. In the linear charging chip, since the function of linearly reducing the charging current with the increase of the chip temperature is an auxiliary application function, the circuit design is relatively simple. There are no overly precise requirements for the start and end range of junction temperature regulation, the slope of current drop, the switching between the control loop and the temperature regulation circuit under different charging modes. Once the demand on the application side increases, the circuit design needs to be further optimized.

Contents of the invention

The embodiments described herein provide a temperature-controlled current generating circuit, a chip, and an electronic device.

According to a first aspect of the present disclosure, a temperature-controlled current generating circuit is provided. The temperature-controlled current generating circuit includes: a temperature-controlled voltage generating circuit, a voltage-controlled current generating circuit, and an output current regulating circuit. Wherein, the temperature control voltage generation circuit is configured to: generate the temperature control voltage according to the temperature control current output from the output current adjustment circuit and the current junction temperature. The voltage-controlled current generation circuit is configured to: generate a voltage-controlled current when the temperature-controlled voltage is equal to a first preset voltage. The output current regulating circuit is configured to regulate the temperature control current under the control of the voltage control current. Wherein, the initial value of the junction temperature for adjusting the temperature control current is inversely proportional to the initial value of the temperature control current. When the current junction temperature is equal to or greater than the initial value of the junction temperature corresponding to the initial value of the temperature control current, the temperature control voltage is equal to the first preset voltage.

In some embodiments of the present disclosure, when the temperature control current is adjusted, the temperature control current decreases linearly as the junction temperature increases. The temperature control voltage generating circuit includes: a current sampling circuit, a current control voltage generating circuit, a negative temperature coefficient voltage generating circuit, a first current generating circuit, a current mirror circuit, and a voltage output circuit. Wherein, the current sampling circuit is configured to: sample the temperature control current to generate a sampling current, and provide the sampling current to the current control voltage generating circuit via the first node. The flow control voltage generating circuit is configured to: generate a flow control voltage linearly positively correlated with the sampling current, and provide the flow control voltage to the first current generating circuit via the first node. The negative temperature coefficient voltage generation circuit is configured to generate the negative temperature coefficient voltage and provide the negative temperature coefficient voltage to the first current generation circuit via the second node. The first current generation circuit is configured to generate a first current according to a voltage difference between the flow control voltage and the negative temperature coefficient voltage, and provide the first current to the current mirror circuit via the third node. Wherein, in the case of adjusting the temperature control current, the voltage difference is a fixed value. The current mirror circuit is configured to generate a mirror current of the first current and supply the mirror current to the voltage output circuit via the fourth node. The voltage output circuit is configured to: generate a temperature control voltage at the fourth node according to the mirror current.

In some embodiments of the present disclosure, the current control voltage generating circuit includes: a first operational amplifier, a first transistor, a first resistor, and a second resistor. Wherein, the first input terminal of the first operational amplifier is provided with the second reference voltage. The second input terminal of the first operational amplifier is coupled to the first pole of the first transistor, the first terminal of the first resistor and the first terminal of the second resistor. The output end of the first operational amplifier is coupled to the control electrode of the first transistor. The second pole of the first transistor is coupled to the first voltage terminal. The second end of the first resistor is coupled to the second voltage end. The second end of the second resistor is coupled to the first node.

In some embodiments of the present disclosure, the first current generating circuit includes: a second operational amplifier, a second transistor, and a third resistor. Wherein, the first input terminal of the second operational amplifier is coupled to the first node. The second input end of the second operational amplifier is coupled to the first pole of the second transistor and the first end of the third resistor. The output end of the second operational amplifier is coupled to the control electrode of the second transistor. The second pole of the second transistor is coupled to the third node. The second end of the third resistor is coupled to the second node.

In some embodiments of the present disclosure, the current mirror circuit includes: third to sixth transistors, a fourth resistor, and a fifth resistor. Wherein, the control electrode of the third transistor is coupled to the control electrode of the fourth transistor, the second electrode of the fifth transistor and the first terminal of the fourth resistor. The first pole of the third transistor is coupled to the first pole of the fourth transistor and the first voltage terminal. The second pole of the third transistor is coupled to the first pole of the fifth transistor. The second pole of the fourth transistor is coupled to the first pole of the sixth transistor. The control electrode of the fifth transistor is coupled to the control electrode of the sixth transistor, the second terminal of the fourth resistor and the third node. The second pole of the sixth transistor is coupled to the first end of the fifth resistor. The second end of the fifth resistor is coupled to the fourth node.

In some embodiments of the present disclosure, the negative temperature coefficient voltage generating circuit includes a seventh transistor. Wherein, the control electrode of the seventh transistor is coupled to the second electrode of the seventh transistor and the second node. The first pole of the seventh transistor is coupled to the second voltage end.

In some embodiments of the present disclosure, the voltage output circuit includes a sixth resistor, wherein a first end of the sixth resistor is coupled to the fourth node. The second end of the sixth resistor is coupled to the second voltage end.

In some embodiments of the present disclosure, the voltage-controlled current generating circuit includes: an error amplifier, and an eighth transistor. Wherein, the first input terminal of the error amplifier is coupled to the output terminal of the temperature control voltage generating circuit. The second input terminal of the error amplifier is supplied with the first reference voltage. The output terminal of the error amplifier is coupled to the control electrode of the eighth transistor. Wherein, the difference between the first preset voltage and the first reference voltage is set such that the output voltage of the error amplifier is equal to the threshold voltage of the eighth transistor. The first pole of the eighth transistor is coupled to the second voltage terminal. The second pole of the eighth transistor is coupled to the input end of the output current regulating circuit.

According to a second aspect of the present disclosure, a temperature-controlled current generating circuit is provided. The temperature-controlled current generating circuit includes: a current sampling circuit, an output current regulating circuit, a first transistor to an eighth transistor, a first resistor to a sixth resistor, a first operational amplifier, a second operational amplifier, and an error amplifier. Wherein, the current sampling circuit is configured to: sample the temperature control current output from the output current regulating circuit to generate a sampling current, and output the sampling current from an output terminal of the current sampling circuit. The first input terminal of the first operational amplifier is provided with the second reference voltage. The second input terminal of the first operational amplifier is coupled to the first pole of the first transistor, the first terminal of the first resistor and the first terminal of the second resistor. The output end of the first operational amplifier is coupled to the control electrode of the first transistor. The second pole of the first transistor is coupled to the first voltage end. The second end of the first resistor is coupled to the second voltage end. The second terminal of the second resistor is coupled to the output terminal of the current sampling circuit and the first input terminal of the second operational amplifier. The second input end of the second operational amplifier is coupled to the first pole of the second transistor and the first end of the third resistor. The output end of the second operational amplifier is coupled to the control electrode of the second transistor. The second pole of the second transistor is coupled to the second terminal of the fourth resistor, the control pole of the fifth transistor, and the gate of the sixth transistor. The second end of the third resistor is coupled to the control electrode and the second electrode of the seventh transistor. The first pole of the seventh transistor is coupled to the second voltage end. The control electrode of the third transistor is coupled to the control electrode of the fourth transistor, the second electrode of the fifth transistor and the first end of the fourth resistor. The first pole of the third transistor is coupled to the first pole of the fourth transistor and the first voltage terminal. The second pole of the third transistor is coupled to the first pole of the fifth transistor. The second pole of the fourth transistor is coupled to the first pole of the sixth transistor. The second pole of the sixth transistor is coupled to the first end of the fifth resistor. The second terminal of the fifth resistor is coupled to the first terminal of the sixth resistor and the first input terminal of the error amplifier. The second end of the sixth resistor is coupled to the second voltage end. The second input terminal of the error amplifier is supplied with the first reference voltage. The output terminal of the error amplifier is coupled to the control electrode of the eighth transistor. The first pole of the eighth transistor is coupled to the second voltage end. The second pole of the eighth transistor is coupled to the input end of the output current regulating circuit. The output current regulating circuit is configured to regulate the temperature control current under the control of the current flowing through the eighth transistor. Wherein, the resistance value of the second resistor is set such that the voltage difference across the third resistor is a fixed value when the temperature control current is adjusted.

According to a third aspect of the present disclosure, a chip is provided. The chip includes the temperature-controlled current generating circuit according to the first aspect or the second aspect of the present disclosure.

According to a fourth aspect of the present disclosure, an electronic device is provided. The electronic device includes the chip according to the third aspect of the present disclosure.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly described below. It should be known that the drawings described below only relate to some embodiments of the present disclosure, rather than limiting the present disclosure. in:

Fig. 1 is an exemplary circuit diagram of a temperature-controlled current generating circuit;

Fig. 2 is a schematic diagram of the desired effect that the temperature-controlled current generating circuit can achieve;

3 is a schematic block diagram of a temperature-controlled current generating circuit according to an embodiment of the present disclosure;

Fig. 4 is a further schematic block diagram of the temperature-controlled current generating circuit shown in Fig. 3; and

FIG. 5 is an exemplary circuit diagram of the temperature-controlled current generating circuit shown in FIG. 4 .

In the drawings, symbols with the same last two digits correspond to the same elements. It should be noted that elements in the drawings are schematic and not drawn to scale.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present disclosure, not all of them. Based on the described embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without creative efforts also fall within the protection scope of the present disclosure.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosed subject matter belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of the specification and related technologies, and will not be interpreted in an idealized or overly formal manner, Unless otherwise expressly defined herein. As used herein, the statement that two or more parts are "connected" or "coupled" together shall mean that the parts are joined together directly or through one or more intermediate components.

In all the embodiments of the present disclosure, since the source and the drain of the metal oxide semiconductor (MOS) transistor are symmetrical, and the conduction current direction between the source and the drain of the N-type transistor and the P-type transistor is opposite , therefore, in the embodiments of the present disclosure, the controlled intermediate terminal of the MOS transistor is called the control pole, and the remaining two ends of the MOS transistor are respectively called the first pole and the second pole. In addition, for the convenience of unified expression, in the context, the base of the bipolar transistor (BJT) is called the control electrode, the emitter of the BJT is called the first electrode, and the collector of the BJT is called the second electrode. In addition, terms such as "first" and "second" are only used to distinguish one element (or a part of a element) from another element (or another part of a element).

FIG. 1 shows an exemplary circuit diagram of a temperature-controlled current generating circuit 100 . The temperature-controlled current generating circuit 100 includes: a current source Itj, a transistor Qn1 , a transistor Qn2 , a transistor Mn, an error amplifier EA, and an output current regulating circuit 110 . The transistor Qn1 and the transistor Qn2 are bipolar transistors. The transistor Mn is a MOS transistor. The current source Itj is used to supply a constant current to the transistor Qn1 and the transistor Qn2. The non-inverting input terminal of the error amplifier EA is provided with a first reference voltage Vref1. The inverting input terminal of the error amplifier EA is supplied with a voltage Vtj.

Since the transistor Qn1 and the transistor Qn2 in FIG. 1 are bipolar transistors, according to the characteristics of bipolar transistors, the voltage Vtj of the second electrode of the transistor Qn1 has a negative temperature coefficient. As the junction temperature increases, the voltage Vtj gradually decreases, so the output voltage ea_out of the error amplifier EA gradually increases. When the output voltage ea_out rises to turn on the transistor Mn, the transistor Mn outputs the current Isink to the output current regulating circuit. The output current regulating circuit adjusts the temperature control current Iout under the control of the current Isink so that the temperature control current Iout decreases linearly as the junction temperature rises.

In some application scenarios, it is expected that the start and end ranges of junction temperature adjustment (that is, adjustment of temperature control current Iout) can be arbitrarily set according to application requirements, and the initial value of junction temperature adjustment and the initial value of temperature control current Iout can be realized. Inversely proportional relationship. FIG. 2 shows a schematic diagram of the expected effect that the temperature-controlled current generating circuit can achieve. When the initial value of the temperature control current Iout is Is0, the junction temperature adjustment starts from the junction temperature T0. When the initial value of the temperature control current Iout is Is1, the junction temperature adjustment starts from the junction temperature T1. When the initial value of the temperature control current Iout is Is2, the junction temperature regulation starts from the junction temperature T2. And no matter what the initial value of the temperature control current Iout is, the trajectory of the temperature control current Iout falling coincides and drops to zero at the junction temperature Te. For example, when the initial value of the temperature control current is Is1, assuming that the initial junction temperature is lower than T1, it is expected that the temperature control current generation circuit will start to regulate the junction temperature when the junction temperature rises to T1 so that the temperature control current Iout increases with The junction temperature decreases linearly with increasing junction temperature. However, during the time period when the junction temperature is lower than T1, the temperature control current Iout remains constant at Is1.

Embodiments of the present disclosure propose a temperature-controlled current generating circuit capable of achieving the above effects. FIG. 3 shows a schematic block diagram of a temperature-controlled current generating circuit 300 according to an embodiment of the present disclosure. The temperature-controlled current generating circuit 300 includes: a temperature-controlled voltage generating circuit 310 , a voltage-controlled current generating circuit 320 , and an output current regulating circuit 330 .

The input terminal of the temperature control voltage generating circuit 310 is coupled to the output terminal of the output current regulating circuit 330 . The output end of the temperature-controlled voltage generating circuit 310 is coupled to the input end of the voltage-controlled current generating circuit 320 . The temperature control voltage generation circuit 310 is configured to generate a temperature control voltage Vcon according to the temperature control current Iout output from the output current regulation circuit 330 and the current junction temperature.

The input end of the voltage-controlled current generating circuit 320 is coupled to the output end of the temperature-controlled voltage generating circuit 310 . The output terminal of the voltage-controlled current generating circuit 320 is coupled to the input terminal of the output current regulating circuit 330 . The voltage-controlled current generating circuit 320 is also coupled to the first reference voltage terminal. The voltage-controlled current generating circuit 320 is configured to: generate the voltage-controlled current Isink when the temperature-controlled voltage Vcon is equal to a first preset voltage. The first reference voltage Vref1 from the first reference voltage terminal is used to set the voltage value of the first preset voltage. For example, according to the specific circuit structure of the voltage-controlled current generating circuit 320 , the first preset voltage can be set to be ΔV higher or lower than the first reference voltage Vref1 . ΔV represents a fixed difference (eg, the threshold voltage of a transistor).

In some embodiments of the present disclosure, the maximum value of the temperature control voltage Vcon is equal to the first preset voltage. When the temperature control voltage Vcon is less than the first preset voltage, the voltage control current Isink is not generated (ie, the voltage control current Isink is zero). In some alternative embodiments of the present disclosure, the minimum value of the temperature control voltage Vcon is equal to the first preset voltage. When the temperature control voltage Vcon is greater than the first preset voltage, the voltage control current Isink is not generated (ie, the voltage control current Isink is zero).

The input terminal of the output current regulating circuit 330 is coupled to the output terminal of the voltage-controlled current generating circuit 320 . The output terminal of the output current regulating circuit 330 is coupled to the input terminal of the temperature control voltage generating circuit 310 . The output current regulation circuit 330 is configured to regulate the temperature control current Iout under the control of the voltage control current Isink. In some embodiments of the present disclosure, the temperature control current Iout is adjusted when the voltage control current Isink is not zero. When the voltage control current Isink is zero, the temperature control current Iout is not adjusted.

Wherein, the initial value of the junction temperature for adjusting the temperature control current Iout is inversely proportional to the initial value of the temperature control current Iout. When the current junction temperature is equal to or greater than the initial value of the junction temperature corresponding to the initial value of the temperature control current Iout, the temperature control voltage Vcon is equal to the first preset voltage.

In the temperature-controlled current generation circuit 300 according to the embodiment of the present disclosure, the temperature-controlled voltage generation circuit 310 makes the temperature-controlled voltage Vcon equal to the first junction temperature when the current junction temperature is equal to the initial value of the junction temperature corresponding to the initial value of the temperature-controlled current Iout. preset voltage. The voltage-controlled current generating circuit 320 generates the voltage-controlled current Isink at this time. The output current regulation circuit 330 regulates the temperature control current Iout under the control of the voltage control current Isink. As the current junction temperature rises, the temperature control voltage Vcon is always equal to the first preset voltage. Therefore, the voltage-controlled current Isink remains unchanged, and the temperature-controlled current Iout can be continuously adjusted.

In some embodiments of the present disclosure, when the temperature control current Iout is adjusted, the temperature control current Iout decreases linearly as the junction temperature rises.

The temperature control current generating circuit 300 according to the embodiment of the present disclosure can set the start and end range of the junction temperature adjustment, and can realize the relationship between the initial value of the junction temperature adjustment and the initial value of the temperature control current Iout which is inversely proportional, so as to realize Fig. 2 The effect shown.

FIG. 4 shows a further schematic block diagram of the temperature-controlled current generating circuit 400 shown in FIG. 3 . The temperature control voltage generation circuit 410 includes: a current sampling circuit 411 , a current control voltage generation circuit 412 , a negative temperature coefficient voltage generation circuit 413 , a first current generation circuit 414 , a current mirror circuit 415 , and a voltage output circuit 416 .

The input terminal of the current sampling circuit 411 is coupled to the output terminal of the output current regulating circuit 330 . The output terminal of the current sampling circuit 411 is coupled to the current control voltage generating circuit 412 and the first current generating circuit 414 via the first node N1. The current sampling circuit 411 is configured to: sample the temperature control current Iout to generate a sampling current Isns, and provide the sampling current Isns to the current control voltage generating circuit 412 via the first node N1. In some embodiments of the present disclosure, Isns=Iout/K, where K represents a sampling ratio.

The current control voltage generating circuit 412 is coupled to the output end of the current sampling circuit 411 and the first current generating circuit 414 via the first node N1. The current control voltage generating circuit 412 is configured to: generate a current control voltage V _N1 linearly positively correlated with the sampling current Isns, and provide the current control voltage V N1 to the first current generating circuit 414 via the first node _N1 . Wherein, the flow control voltage V _N1 has a zero temperature coefficient, no matter how the junction temperature changes, the flow control voltage V _N1 is always linearly positively correlated with the sampling current Isns. The current control voltage V _N1 is equal to the voltage at the first node N1 .

The negative temperature coefficient voltage generating circuit 413 is coupled to the first current generating circuit 414 via the second node N2. The negative temperature coefficient voltage generation circuit 413 is configured to: generate a negative temperature coefficient voltage V _N2 , and provide the negative temperature coefficient voltage V _N2 to the first current generation circuit 414 via the second node N2 . In some embodiments of the present disclosure, the negative temperature coefficient voltage V _N2 decreases linearly as the junction temperature increases. The negative temperature coefficient voltage V _N2 is equal to the voltage at the second node N2.

The first current generating circuit 414 is coupled to the current control voltage generating circuit 412 and the current sampling circuit 411 via the first node N1. The first current generating circuit 414 is coupled to the negative temperature coefficient voltage generating circuit 413 via the second node N2. The first current generating circuit 414 is coupled to the current mirror circuit 415 via the third node N3. The first current generating circuit 414 is configured to: generate the first current I1 according to the voltage difference between the current control voltage V _N1 and the negative temperature coefficient voltage V _N2 , and provide the first current to the current mirror circuit 415 via the third node N3 I1. Wherein, in the case of adjusting the temperature control current Iout, the voltage difference between the current control voltage V _N1 and the negative temperature coefficient voltage V _N2 is a fixed value.

The current mirror circuit 415 is coupled to the first current generating circuit 414 via the third node N3. The current mirror circuit 415 is coupled to the voltage output circuit 416 via the fourth node N4. The current mirror circuit 415 is configured to: generate a mirror current I2 of the first current I1, and provide the mirror current I2 to the voltage output circuit 416 via the fourth node N4. In some embodiments of the present disclosure, the ratio of the first current I1 to the mirror current I2 is 1:N. Wherein, N is a positive number.

The voltage output circuit 416 is coupled to the current mirror circuit 415 via the fourth node N4. The voltage output circuit 416 is configured to: generate a temperature control voltage Vcon at the fourth node N4 according to the mirror current I2. The temperature control voltage Vcon is equal to the voltage at the fourth node N4. The fourth node N4 is coupled to the output end of the temperature control voltage generation circuit 410 . The temperature control voltage Vcon is output from the output terminal of the temperature control voltage generation circuit 410 to the voltage control current generation circuit 420 .

In the example of FIG. 4 , the voltage-controlled current generating circuit 420 includes: an error amplifier EA, and an eighth transistor M8. Wherein, the first input terminal of the error amplifier EA is coupled to the output terminal of the temperature control voltage generating circuit 410 . The second input terminal of the error amplifier EA is supplied with the first reference voltage Vref1. The output terminal of the error amplifier EA is coupled to the control electrode of the eighth transistor M8. The first pole of the eighth transistor M8 is coupled to the second voltage terminal V2. The second pole of the eighth transistor M8 is coupled to the input terminal of the output current regulating circuit 330 . The current flowing through the eighth transistor M8 is the aforementioned voltage-controlled current Isink.

In the example of FIG. 4 , the second voltage terminal V2 is grounded. The first input terminal of the error amplifier EA is a non-inverting input terminal. The second input of the error amplifier EA is an inverting input.

Referring to FIG. 2 , it is assumed that the initial value of the temperature control current is Is1, and the initial value of the junction temperature is lower than T1. Junction temperature regulation is not initiated at this time. Therefore, the sampling current Isns remains unchanged, so that the current control voltage V _N1 remains unchanged. As the junction temperature gradually increases, the negative temperature coefficient voltage V _N2 decreases, and the voltage difference between the current control voltage V _N1 and the negative temperature coefficient voltage V _N2 gradually increases, so that the temperature control voltage Vcon also gradually increases. When the junction temperature rises to T1, the temperature control voltage Vcon rises to the first preset voltage, and the output voltage ea_out of the error amplifier EA rises to turn on the eighth transistor M8. The eighth transistor M8 outputs the voltage-controlled current Isink to the output current regulating circuit 330 . The output current regulation circuit controls the temperature control current Iout to decrease linearly through the voltage control current Isink. In the case of adjusting the temperature control current Iout, the current control voltage V _N1 decreases with the rise of the junction temperature, and the negative temperature coefficient voltage V _N2 also decreases with the rise of the junction temperature. By setting the falling slopes of the two, the voltage difference between the current control voltage V _N1 and the negative temperature coefficient voltage V _N2 can be fixed, so that the temperature control voltage Vcon also remains unchanged. Therefore, the voltage-controlled current Isink remains unchanged, and the temperature-controlled current Iout can be continuously adjusted.

FIG. 5 shows an exemplary circuit diagram of the temperature-controlled current generating circuit 500 shown in FIG. 4 . The current control voltage V _N1 generation circuit 512 includes: a first operational amplifier A1 , a first transistor M1 , a first resistor R1 , and a second resistor R2 . Wherein, the first input terminal of the first operational amplifier A1 is provided with the second reference voltage Vref2. The second input terminal of the first operational amplifier A1 is coupled to the first terminal of the first transistor M1, the first terminal of the first resistor R1 and the first terminal of the second resistor R2. The output terminal of the first operational amplifier A1 is coupled to the control electrode of the first transistor M1. The second pole of the first transistor M1 is coupled to the first voltage terminal V1. A second terminal of the first resistor R1 is coupled to the second voltage terminal V2. A second end of the second resistor R2 is coupled to the first node N1.

The first current I1 generating circuit 514 includes: a second operational amplifier A2, a second transistor M2, and a third resistor R3. Wherein, the first input terminal of the second operational amplifier A2 is coupled to the first node N1. The second input terminal of the second operational amplifier A2 is coupled to the first terminal of the second transistor M2 and the first terminal of the third resistor R3. The output terminal of the second operational amplifier A2 is coupled to the control electrode of the second transistor M2. The second pole of the second transistor M2 is coupled to the third node N3. A second end of the third resistor R3 is coupled to the second node N2.

The current mirror circuit 515 includes: a third transistor M3 to a sixth transistor M6 , a fourth resistor R4 , and a fifth resistor R5 . Wherein, the control electrode of the third transistor M3 is coupled to the control electrode of the fourth transistor M4, the second electrode of the fifth transistor M5 and the first end of the fourth resistor R4. The first pole of the third transistor M3 is coupled to the first pole of the fourth transistor M4 and the first voltage terminal V1. The second pole of the third transistor M3 is coupled to the first pole of the fifth transistor M5. The second pole of the fourth transistor M4 is coupled to the first pole of the sixth transistor M6. The control electrode of the fifth transistor M5 is coupled to the control electrode of the sixth transistor M6, the second terminal of the fourth resistor R4 and the third node N3. The second pole of the sixth transistor M6 is coupled to the first end of the fifth resistor R5. A second end of the fifth resistor R5 is coupled to the fourth node N4. In some embodiments of the present disclosure, the ratio of the aspect ratio of the third transistor M3 to the aspect ratio of the fourth transistor M4 is 1:N. Wherein, N is a positive number.

The negative temperature coefficient voltage generating circuit 513 includes a seventh transistor Q7. Wherein, the control electrode of the seventh transistor Q7 is coupled to the second electrode of the seventh transistor Q7 and the second node N2. A first electrode of the seventh transistor Q7 is coupled to the second voltage terminal V2.

The voltage output circuit 516 includes a sixth resistor R6, wherein a first end of the sixth resistor R6 is coupled to the fourth node N4. A second terminal of the sixth resistor R6 is coupled to the second voltage terminal V2.

In the example of FIG. 5, a high voltage signal is input from the first voltage terminal V1, and the second voltage terminal V2 is grounded. The first transistor M1, the second transistor M2, and the eighth transistor M8 are NMOS transistors. The third transistor M3 to the sixth transistor M6 are PMOS transistors. The seventh transistor Q7 is an NPN bipolar transistor. The first input terminal of the first operational amplifier A1 is a non-inverting input terminal. The second input terminal of the first operational amplifier A1 is an inverting input terminal. The first input terminal of the second operational amplifier A2 is a non-inverting input terminal. The second input terminal of the second operational amplifier A2 is an inverting input terminal. The first input terminal of the error amplifier EA is a non-inverting input terminal. The second input of the error amplifier EA is an inverting input. Those skilled in the art should understand that modifications to the circuit shown in FIG. 5 based on the above inventive concepts should also fall within the protection scope of the present disclosure. In this variant, the aforementioned transistors and voltage terminals may also have a different arrangement than the example shown in FIG. 5 .

The working process of the temperature-controlled current generating circuit 500 according to the embodiment of the present disclosure will be described below with reference to the examples in FIG. 2 and FIG. 5 .

Since the two input terminals of the operational amplifier are virtual short and disconnected, the voltage of the inverting input terminal of the first operational amplifier A1 is equal to the second reference voltage Vref2 of its non-inverting input terminal, that is, the voltage V _N5 of the fifth node N5 is equal to Vref2. Therefore, the voltage (current control voltage) of the first node N1 V _N1 =R2×Isns+V _N5 =R2×Isns+Vref2 . Wherein, R2 represents the resistance value of the second resistor R2, and Isns represents the current value of the sampling current Isns. In an embodiment of the present disclosure, the second resistor R2 is a zero temperature coefficient resistor. Therefore, the voltage V _N1 of the first node N1 is linearly related to the sampling current Isns and has nothing to do with temperature.

Similarly, the voltage at the inverting input terminal of the second operational amplifier A2 is equal to the voltage V _N1 at its non-inverting input terminal, that is, the voltage V _N6 at the sixth node N6 is equal to V _N1 . The voltage difference across the third resistor R3 is V _N1 -V _N2 , where V _N2 is equal to the base-emitter voltage Vbe of the seventh transistor Q7. Therefore, the voltage difference across the third resistor R3 can be expressed as R2*Isns+Vref2-Vbe. The first current I1 flowing through the third resistor R3 is calculated as (R2×Isns−Vbe+Vref2)/R3. Since the mirror current I2 is equal to N times the first current I1, the voltage of the fourth node N4 is calculated as Vcon=N×(R2×Isns−Vbe+Vref2)×R6/R3.

Referring to FIG. 2 , it is assumed that the initial value of the temperature control current Iout is Is1, and the initial value of the junction temperature is lower than T1. Junction temperature regulation is not initiated at this time. Therefore, the sampling current Isns remains unchanged, so that the current control voltage V _N1 remains unchanged. As the junction temperature increases gradually, the base-emitter voltage Vbe of the seventh transistor Q7 increases gradually. Setting the resistance value of the second resistor R2 can keep V _N1 −V _N2 =R2×Isns+Vref2 −Vbe constant when the junction temperature reaches T1 , so that the temperature control voltage Vcon is a constant value. In this case, Vcon can be kept at the first preset voltage by setting N, Vref2, R6, and R3. Therefore, the output voltage ea_out of the error amplifier EA increases to turn on the eighth transistor M8 , and the eighth transistor M8 outputs the voltage-controlled current Isink to the output current regulating circuit 330 . The output current regulation circuit controls the temperature control current Iout to decrease linearly through the voltage control current Isink. In the case of adjusting the temperature control current Iout, the voltage difference (R2×Isns-Vbe+Vref2) between the current control voltage V _N1 and the negative temperature coefficient voltage V _N2 is a fixed value, so that the temperature control voltage Vcon also maintains constant. Therefore, the voltage-controlled current Isink remains unchanged, and the temperature-controlled current Iout can be continuously adjusted.

Those skilled in the art should understand that the internal structures of the current sampling circuit 411 and the output current regulating circuit 330 in FIG. 5 can be implemented in a conventional manner. Embodiments of the present disclosure do not limit the specific implementation manners of the current sampling circuit 411 and the output current regulation circuit 330 .

The embodiment of the present disclosure also provides a chip. The chip includes a temperature-controlled current generating circuit according to an embodiment of the present disclosure. The chip is, for example, a power management chip.

The embodiment of the present disclosure also provides an electronic device. The electronic device includes a chip according to an embodiment of the present disclosure. The electronic device is, for example, a smart charging device or a smart terminal device (such as a tablet computer, a smart phone, etc.).

To sum up, the temperature-controlled current generation circuit according to the embodiments of the present disclosure can not only control the temperature-controlled current to decrease linearly as the junction temperature rises, but also can arbitrarily set the junction temperature adjustment according to the application requirements (that is, for the temperature-controlled current adjustment), and can realize the inverse relationship between the initial value of the junction temperature adjustment and the initial value of the temperature control current.

Unless the context clearly dictates otherwise, as used herein and in the appended claims, the singular includes the plural and vice versa. Thus, when referring to the singular, the plural of the corresponding term will generally be included. Similarly, the words "comprise" and "include" are to be interpreted as being inclusive and not exclusive. Likewise, the terms "include" and "or" should be construed as inclusive, unless such an interpretation is expressly prohibited herein. Where the term "example" is used herein, particularly when it follows a group of terms, said "example" is exemplary and explanatory only, and should not be considered to be exclusive or inclusive .

Further aspects and ranges of adaptations will become apparent from the description provided herein. It should be understood that various aspects of the present application may be implemented alone or in combination with one or more other aspects. It should also be understood that the description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the application.

Several embodiments of the present disclosure have been described in detail above, but obviously, those skilled in the art can make various modifications and variations to the embodiments of the present disclosure without departing from the spirit and scope of the present disclosure. The protection scope of the present disclosure is defined by the appended claims.

Claims (10)

1. A temperature-controlled current generating circuit, comprising: a temperature-controlled voltage generating circuit, a voltage-controlled current generating circuit, and an output current regulating circuit, Wherein, the temperature-controlled voltage generation circuit is configured to: generate a temperature-controlled voltage according to the temperature-controlled current output from the output current regulation circuit and the current junction temperature; The voltage-controlled current generating circuit is configured to: generate a voltage-controlled current when the temperature-controlled voltage is equal to a first preset voltage; The output current regulation circuit is configured to: regulate the temperature control current under the control of the voltage control current; Wherein, the initial value of the junction temperature for adjusting the temperature control current is inversely proportional to the initial value of the temperature control current, and when the current junction temperature is equal to or greater than the junction temperature corresponding to the initial value of the temperature control current The temperature control voltage is equal to the first preset voltage when the initial value of the temperature is set. 2. The temperature-controlled current generating circuit according to claim 1, wherein, when the temperature-controlled current is adjusted, the temperature-controlled current decreases linearly as the junction temperature increases; The temperature control voltage generating circuit includes: a current sampling circuit, a current control voltage generating circuit, a negative temperature coefficient voltage generating circuit, a first current generating circuit, a current mirror circuit, and a voltage output circuit, Wherein, the current sampling circuit is configured to: sample the temperature control current to generate a sampling current, and provide the sampling current to the current control voltage generation circuit via the first node; The flow control voltage generation circuit is configured to: generate a flow control voltage linearly positively correlated with the sampling current, and provide the flow control voltage to the first current generation circuit via the first node; The negative temperature coefficient voltage generation circuit is configured to: generate a negative temperature coefficient voltage, and provide the negative temperature coefficient voltage to the first current generation circuit via a second node; The first current generating circuit is configured to: generate a first current according to a voltage difference between the flow control voltage and the negative temperature coefficient voltage, and provide the first current to the current mirror circuit via a third node. a current, wherein the voltage difference is a fixed value when the temperature control current is adjusted; The current mirror circuit is configured to: generate a mirror current of the first current, and provide the mirror current to the voltage output circuit via a fourth node; The voltage output circuit is configured to: generate the temperature control voltage at the fourth node according to the mirror current. 3. The temperature-controlled current generating circuit according to claim 2, wherein the current-controlled voltage generating circuit comprises: a first operational amplifier, a first transistor, a first resistor, and a second resistor, Wherein, the first input terminal of the first operational amplifier is provided with a second reference voltage, and the second input terminal of the first operational amplifier is coupled to the first pole of the first transistor and the first resistor of the first resistor. the first terminal and the first terminal of the second resistor, the output terminal of the first operational amplifier is coupled to the control electrode of the first transistor; The second pole of the first transistor is coupled to the first voltage terminal; The second terminal of the first resistor is coupled to the second voltage terminal; A second end of the second resistor is coupled to the first node. 4. The temperature-controlled current generation circuit according to claim 2, wherein the first current generation circuit comprises: a second operational amplifier, a second transistor, and a third resistor, Wherein, the first input terminal of the second operational amplifier is coupled to the first node, and the second input terminal of the second operational amplifier is coupled to the first pole of the second transistor and the third resistor the first terminal of the second operational amplifier, the output terminal of the second operational amplifier is coupled to the control electrode of the second transistor; the second pole of the second transistor is coupled to the third node; A second end of the third resistor is coupled to the second node. 5. The temperature-controlled current generating circuit according to claim 2, wherein the current mirror circuit comprises: a third transistor to a sixth transistor, a fourth resistor, and a fifth resistor, Wherein, the control pole of the third transistor is coupled to the control pole of the fourth transistor, the second pole of the fifth transistor and the first terminal of the fourth resistor, and the first pole of the third transistor is coupled to the The first pole of the fourth transistor and the first voltage terminal, the second pole of the third transistor is coupled to the first pole of the fifth transistor; The second pole of the fourth transistor is coupled to the first pole of the sixth transistor; The control electrode of the fifth transistor is coupled to the control electrode of the sixth transistor, the second terminal of the fourth resistor, and the third node; The second pole of the sixth transistor is coupled to the first end of the fifth resistor; A second end of the fifth resistor is coupled to the fourth node. 6. The temperature-controlled current generating circuit according to claim 2, wherein the negative temperature coefficient voltage generating circuit comprises a seventh transistor, wherein the control electrode of the seventh transistor is coupled to the second transistor of the seventh transistor. pole and the second node, the first pole of the seventh transistor is coupled to the second voltage terminal; and/or The voltage output circuit includes a sixth resistor, wherein a first end of the sixth resistor is coupled to the fourth node, and a second end of the sixth resistor is coupled to the second voltage end. 7. The temperature-controlled current generating circuit according to any one of claims 1 to 6, wherein the voltage-controlled current generating circuit comprises: an error amplifier, and an eighth transistor, Wherein, the first input terminal of the error amplifier is coupled to the output terminal of the temperature control voltage generating circuit, the second input terminal of the error amplifier is provided with the first reference voltage, and the output terminal of the error amplifier is coupled connected to the control electrode of the eighth transistor, wherein the difference between the first preset voltage and the first reference voltage is set so that the output voltage of the error amplifier is equal to the threshold voltage of the eighth transistor; The first pole of the eighth transistor is coupled to the second voltage terminal, and the second pole of the eighth transistor is coupled to the input terminal of the output current regulating circuit. 8. A temperature-controlled current generating circuit, comprising: a current sampling circuit, an output current regulating circuit, a first transistor to an eighth transistor, a first resistor to a sixth resistor, a first operational amplifier, a second operational amplifier, and error amplifier, Wherein, the current sampling circuit is configured to: sample the temperature control current output from the output current regulating circuit to generate a sampling current, and output the sampling current from an output terminal of the current sampling circuit; The first input terminal of the first operational amplifier is provided with a second reference voltage, and the second input terminal of the first operational amplifier is coupled to the first pole of the first transistor and the first electrode of the first resistor. terminal and the first terminal of the second resistor, the output terminal of the first operational amplifier is coupled to the control electrode of the first transistor; The second pole of the first transistor is coupled to the first voltage terminal; The second terminal of the first resistor is coupled to the second voltage terminal; The second terminal of the second resistor is coupled to the output terminal of the current sampling circuit and the first input terminal of the second operational amplifier; The second input terminal of the second operational amplifier is coupled to the first pole of the second transistor and the first terminal of the third resistor, and the output terminal of the second operational amplifier is coupled to the control pole of the second transistor; The second electrode of the second transistor is coupled to the second end of the fourth resistor, the control electrode of the fifth transistor, and the control electrode of the sixth transistor; The second end of the third resistor is coupled to the control electrode and the second electrode of the seventh transistor; The first pole of the seventh transistor is coupled to the second voltage terminal; The control pole of the third transistor is coupled to the control pole of the fourth transistor, the second pole of the fifth transistor and the first terminal of the fourth resistor, and the first pole of the third transistor is coupled to the first terminal of the fourth transistor. The first pole of the four transistors and the first voltage terminal, the second pole of the third transistor is coupled to the first pole of the fifth transistor; The second pole of the fourth transistor is coupled to the first pole of the sixth transistor; The second pole of the sixth transistor is coupled to the first end of the fifth resistor; The second end of the fifth resistor is coupled to the first end of the sixth resistor and the first input end of the error amplifier; The second end of the sixth resistor is coupled to the second voltage end; The second input terminal of the error amplifier is provided with a first reference voltage, and the output terminal of the error amplifier is coupled to the control electrode of the eighth transistor; The first pole of the eighth transistor is coupled to the second voltage terminal, and the second pole of the eighth transistor is coupled to the input terminal of the output current regulating circuit; The output current regulating circuit is configured to: regulate the temperature control current under the control of the current flowing through the eighth transistor; Wherein, the resistance value of the second resistor is set such that the voltage difference between the two ends of the third resistor is a fixed value when the temperature control current is adjusted. 9. A chip, comprising: the temperature-controlled current generating circuit according to any one of claims 1-8. 10. An electronic device comprising: the chip according to claim 9.

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