[go: up one dir, main page]

CN116300117B - 一种硅基底中波红外带空气间隙的棱镜pbs分束膜 - Google Patents

一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Info

Publication number
CN116300117B
CN116300117B CN202310435455.5A CN202310435455A CN116300117B CN 116300117 B CN116300117 B CN 116300117B CN 202310435455 A CN202310435455 A CN 202310435455A CN 116300117 B CN116300117 B CN 116300117B
Authority
CN
China
Prior art keywords
layer
beam splitter
film
wave infrared
air gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202310435455.5A
Other languages
English (en)
Other versions
CN116300117A (zh
Inventor
陈佳佳
李全民
王劲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing Wavelength Optoelectronics Technology Co Ltd
Original Assignee
Nanjing Wavelength Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing Wavelength Optoelectronics Technology Co Ltd filed Critical Nanjing Wavelength Optoelectronics Technology Co Ltd
Priority to CN202310435455.5A priority Critical patent/CN116300117B/zh
Publication of CN116300117A publication Critical patent/CN116300117A/zh
Application granted granted Critical
Publication of CN116300117B publication Critical patent/CN116300117B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/1073Beam splitting or combining systems characterized by manufacturing or alignment methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10Glass or silica
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10Beam splitting or combining systems
    • G02B27/12Beam splitting or combining systems operating by refraction only
    • G02B27/126The splitting element being a prism or prismatic array, including systems based on total internal reflection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Polarising Elements (AREA)

Abstract

本发明公开了一种硅基底中波红外带空气间隙的棱镜PBS分束膜,其结构为:S/aLbHcLdHeLfHgLhHiA/S,其中,S代表Si基底、A代表空气间隙、H代表Ge、L代表SiO;a‑i代表第一层到第八层的四分之一参考波长光学厚度的系数。本发明提供一种硅基底中波红外带空气间隙的棱镜PBS分束膜,采用无胶胶合的方法,避免了胶体对通光孔径内光学指标的影响;耐水性好,膜层持久、稳定,透射率高。

Description

一种硅基底中波红外带空气间隙的棱镜PBS分束膜
技术领域
本发明涉及一种硅基底中波红外带空气间隙的棱镜PBS分束膜,属于光学薄膜技术领域。
背景技术
PBS偏振分光棱镜是能把入射的非偏振光分离成两束互相垂直的线偏光的光学元器件,其中P光能完全通过,S光则被反射。该元器件是在棱镜的斜面镀制PBS分光膜,并由两个直角棱镜胶合形成的。
PBS偏振分光棱镜几乎还处在国外垄断阶段,国内工艺还不成熟,且一般也都是采用胶体胶合,胶体的折射率会影响光学指标,使得消光比达不到或者透过率达不到;且膜层容易吸湿,耐久性和稳定性较差,透射率低。
发明内容
本发明提供一种硅基底中波红外带空气间隙的棱镜PBS分束膜,采用无胶胶合的方法,避免了胶体对通光孔径内光学指标的影响;耐水性好,膜层持久、稳定,透射率高,大于98.5%。
为解决上述技术问题,本发明所采用的技术方案如下:
一种硅基底中波红外带空气间隙的棱镜PBS分束膜,其结构为:S/aLbHcLdHeLfHgLhHiA/S,其中,S代表Si基底、A代表空气间隙、H代表Ge、L代表SiO;a--i代表第一层到第八层的四分之一参考波长光学厚度的系数。
本申请经过对不同方案膜系的设计和优化比较,最终得到了9层的膜层结构:Si基底/SiO/Ge/SiO/Ge/SiO/Ge/SiO/Ge/Air(SiO2)/Si基底,即从第一片Si基底到第二片Si基底的顺序:第一﹑三、五、七层是SiO层,第二、四、六、八层是Ge层,第九层是Air空气间隙层(支撑边框采用SiO2制备,支撑边框内侧为Air空气间隙)。
经研究发现,若采用氟化物与本申请膜层搭配,则膜层微观结构容易出现多孔柱状,质地软,且容易吸收水汽,导致元器件的耐久性变差;通过交替镀制SiO(低折射率材料)与Ge(高折射率材料),同时空气间隙采用SiO2镀制支撑边框,采用空气间隙作为等效膜层,得到了在中红外范围内的吸收系数小、透射率高的膜系结构,提高了光学性能和膜层稳定性。
为了进一步兼顾膜层的光学性能和机械性能,参考波长为4.5μm,a的取值为0.25~0.29,b的取值为0.79~0.83,c的取值为0.71~0.75,d的取值为0.77~0.81,e的取值为0.90~0.94,f的取值为0.77~0.81,g的取值为0.71~0.75,h的取值为0.83~0.87,i的取值为0.1~0.15。
进一步优选,aL层的物理厚度为170±20nm,bH层的物理厚度为230±20nm,cL层的物理厚度为460±30nm,dH层的物理厚度为220±20nm,eL层的物理厚度为580±50nm,fH层的物理厚度为220±20nm,gL层的物理厚度为460±30nm,hH层的物理厚度为240±20nm,iA层的物理厚度为140±10nm。aL层的物理厚度指aL对应位置膜层的物理厚度,其余各层的含义类似。
上述Si基底有结构相同的两块,两块Si基底靠合在一起,分束膜设在两块Si基底之间,分束膜的厚度方向上无胶体层,彻底避免了胶体层对光学性能的影响。
作为其中一种具体的优选实施方案,两块Si基底均为直角三棱柱结构,分束膜设在其中一块直角三棱柱结构的斜面上,在另一块直角三棱柱结构的斜面上沿周边设置支撑边框,将两块直角三棱柱结构的斜面相向靠合,支撑边框粘结在分束膜周边、形成长方体结构,支撑边框内侧形成空气间隙;支撑边框采用SiO2制备,SiO2的蒸发速率控制在0.5-1nm/s。
上述支撑边框与另一块直角三棱柱结构的斜面之间,利用膜料分子间的吸引力结合在一起,无需光胶,从根本上,避免了胶体的影响。
上述支撑边框是沿分束膜两端或四周的支撑边框,也即,支撑边框为沿分束膜四周设置的方形边框结构,或者,支撑边框为设在分束膜两端的支撑条,两端的支撑条相互平行、形成支撑,这样即可与外界空气形成隔离,减少空气对膜层的侵蚀,又能形成空气间隙,避免胶体对光学性能的影响。支撑边框的厚度也即空气间隙层的厚度。
膜层的镀制方法也会对膜层的机械性能和光学性能造成影响,经过长期的研发实践,发现优选的镀制工艺为:上述aL层、cL层、eL层和gL层采用阻蒸蒸发源镀制;bH层、dH层、fH层和hH层采用电子枪蒸发源镀制。
进一步优选,SiO的蒸发速率控制在0.5-1nm/s;Ge的蒸发速率控制在0.3-0.5nm/s。
本发明未提及的技术均参照现有技术。
本发明硅基底中波红外带空气间隙的胶合棱镜PBS分束膜,以硅为基底,采用带有空气间隙膜系的设计结构,通过膜层结构的改进,膜层间采用无胶胶合的方法,避免了胶体对通光孔径内光学指标的影响;通过对镀膜材料有效的选择,合理地控制各项工艺参数,采用空气隙作为等效膜层,在基底上镀制多层薄膜,使镀膜指标消光比达到2000:1。
附图说明
图1为硅基底中波红外带空气间隙的胶合棱镜PBS分束膜层结构示意图;
图2为硅基底中波红外带空气间隙的胶合棱镜的截面图;
图3为实施例中硅基底中波红外带空气间隙的胶合棱镜PBS分束膜层的设计曲线;
图4为实施例中硅基底中波红外带空气间隙的胶合棱镜PBS分束膜层的测试曲线;
图中,1为膜层,2为空气间隙,3为Ge层,4为SiO层,5为支撑边框,6为Si基底。
具体实施方式
为了更好地理解本发明,下面结合实施例进一步阐明本发明的内容,但本发明的内容不仅仅局限于下面的实施例。
如图1-2所示,硅基底中波红外带空气间隙的胶合棱镜PBS分束膜,结构为:S/aLbHcLdHeLfHgLhHiA/S,其中,S代表Si基底、A代表空气间隙、H代表Ge、L代表SiO,也即按照第一片Si基底到第二片Si基底的顺序:第一﹑三、五、七层是SiO层,第二、四、六、八层是Ge层,第九层是Air空气间隙;a-i代表第一层到第八层的四分之一参考波长光学厚度的系数;参考波长为4.5μm,a-i分别为0.27、0.81、0.73﹑0.79﹑0.92﹑0.79、0.73、0.85、0.12。
aL层的物理厚度为170nm,bH层的物理厚度为230nm,cL层的物理厚度为460nm,dH层的物理厚度为220nm,eL层的物理厚度为580nm,fH层的物理厚度为220nm,gL层的物理厚度为460nm,hH层的物理厚度为240nm,iA层的物理厚度为140nm,设计曲线如图3。
如图2所示,两块Si基底均为直角三棱柱结构,分束膜设在其中一块直角三棱柱结构的斜面上,在另一块直角三棱柱结构的斜面上沿周边设置支撑边框,将两块直角三棱柱结构的斜面相向靠合,支撑边框粘结在分束膜周边、整体外形(两个直角三棱柱拼接)形成长方体结构,支撑边框内侧形成空气间隙,支撑边框采用SiO2制备,支撑边框与另一块直角三棱柱结构的斜面之间利用膜料分子间的吸引力紧密结合在一起,同时可在基材侧面(见图2中阴影部分)采用靠体进行胶体加固,在分束膜的厚度方向上(工作区域)是没有任何胶体的,这样既保证了稳定性,又避免了胶体对光学性能的影响。
膜系的制备:
采用成都兴南科技的1100型镀膜机,用膜林科技MXC-3B石英晶体控制仪监控薄膜的蒸发速率及膜层厚度,利用广东中山博顿光电的中空阴极霍尔离子源辅助。
在第一片Si棱镜斜面采用电子枪和阻蒸热蒸发镀制本设计的前八层,起始真空度优于1.0×10-3Pa,烘烤温度为180℃。离子源参数设置为:放电电压150-250V,放电束流2-6A。蒸发前,对基底进行1min的离子轰击,目的是清洁基片,提高膜层的附着力。在膜层沉积的过程中,第一层(SiO)使用离子源辅助沉积,提升膜层的牢固度。SiO的蒸发速率控制在0.6nm/s,Ge的蒸发速率控制在0.4nm/s。第一﹑三、五、七层采用阻蒸蒸发源镀SiO,第二、四、六、八层是采用电子枪蒸发源镀Ge。
为形成空气间隙,在第二片Si棱镜斜面的两端采用电子枪热蒸发镀制本设计的第九层(支撑边框),起始真空度优于1.0×10-3Pa,常温镀膜,不设置烘烤加热。离子源参数设置为:放电电压150-250V,放电束流2-6A。蒸发前,对基底进行1min的离子轰击,目的是清洁基片,提高膜层的附着力,SiO2的蒸发速率控制在0.8nm/s,最终将两片Si棱镜斜面无胶胶合完成成品的制备。
测试结果:
光学性能测试:采用白俄罗斯的PHOTO RT分光光度计进行测试,得到的光谱曲线达到设计要求,如图4,透射率大于98.5%,消光比达到2000:1。
环境性能测试:为了保证光学元件的可靠性,按照GJB2485-95光学膜层通用规范的要求,对该胶合棱镜PBS分束膜样品进行了如下环境试验:
(1)耐磨强度实验:在橡皮摩擦头外裹2层干燥脱脂纱布,保持9.8N压力下顺着同一轨迹对膜层进行摩擦,往返100次,膜层无擦痕等损伤。
(2)附着力实验:用宽为1cm的3M胶带粘牢在膜层表面,将胶带从零件的边缘朝表面的垂直方向迅速拉起后,膜层无脱落、无损伤。
(3)浸泡试验:将样品完全浸入蒸馏水或去离子水中,24小时后膜层无异常,然后按照上述方法依次重复测试耐磨强度和附着力,均无损伤、无脱落。
(4)高低温试验:-40℃恒温半小时,从-40℃迅速切换到90℃恒温半小时,再从90℃到-40℃恒温两小时,循环五次,膜层无异常,然后按照上述方法依次重复测试耐磨强度、附着力和浸泡实验,均无损伤、无脱落、无异常。
(5)盐雾试验:温度35±2℃,浓度为4.9%~5.1%的NaCl溶液,连续喷雾24小时,膜层无异常,然后按照上述方法依次重复测试耐磨强度、附着力、浸泡和高低温实验,均无损伤、无脱落、无异常。
以上实验结果表明,通过本设计制备的Si基底棱镜PBS分光膜,光谱指标合格,性能优越,具有高可靠性,能够满足恶劣环境下的光学系统使用要求。透光范围宽吸收小;机械和化学性能稳定;基底与膜料及膜料与膜料之间附着力和兼容性高。
对比例1
与实施例1不同的是:不设支撑边框和空气间隙。虽对机械性能的影响可以忽略,但对该元器件的光学性能的影响较大,透过率和消光比的下降幅度均大于20%,从而影响整个光学系统的使用。

Claims (7)

1.一种硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:其结构为:S/aLbHcLdHeLfHgLhHiA/S,其中,S代表Si基底、A代表空气间隙、H代表Ge、L代表SiO;a-i代表第一层到第八层的四分之一参考波长光学厚度的系数;
Si基底有结构相同的两块,两块Si基底靠合在一起,分束膜设在两块Si基底之间,分束膜上无胶体层;
aL层的物理厚度为170±20nm,bH层的物理厚度为230±20nm,cL层的物理厚度为460±30nm,dH层的物理厚度为220±20nm,eL层的物理厚度为580±50nm,fH层的物理厚度为220±20nm,gL层的物理厚度为460±30nm,hH层的物理厚度为240±20nm,iA层的物理厚度为140±10nm。
2.如权利要求1所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:参考波长为4.5μm,a的取值为0.25~0.29,b的取值为0.79~0.83,c的取值为0.71~0.75,d的取值为0.77~0.81,e的取值为0.90~0.94,f的取值为0.77~0.81,g的取值为0.71~0.75,h的取值为0.83~0.87,i的取值为0.1~0.15。
3.如权利要求1或2所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:两块Si基底均为直角三棱柱结构,分束膜设在其中一块直角三棱柱结构的斜面上,在另一块直角三棱柱结构的斜面上沿周边设置支撑边框,将两块直角三棱柱结构的斜面相向靠合,支撑边框粘结在分束膜周边、形成长方体结构,支撑边框内侧形成空气间隙;支撑边框采用SiO2制备。
4.如权利要求3所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:支撑边框制备时,SiO2的蒸发速率控制在0.5-1nm/s。
5.如权利要求1或2所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:aL层、cL层、eL层和gL层采用阻蒸蒸发源镀制;bH层、dH层、fH层和hH层采用电子枪蒸发源镀制。
6.如权利要求1或2所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:SiO的蒸发速率控制在0.5-1nm/s。
7.如权利要求1或2所述的硅基底中波红外带空气间隙的棱镜PBS分束膜,其特征在于:Ge的蒸发速率控制在0.3-0.5nm/s。
CN202310435455.5A 2023-04-21 2023-04-21 一种硅基底中波红外带空气间隙的棱镜pbs分束膜 Active CN116300117B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310435455.5A CN116300117B (zh) 2023-04-21 2023-04-21 一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310435455.5A CN116300117B (zh) 2023-04-21 2023-04-21 一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Publications (2)

Publication Number Publication Date
CN116300117A CN116300117A (zh) 2023-06-23
CN116300117B true CN116300117B (zh) 2025-10-10

Family

ID=86803343

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310435455.5A Active CN116300117B (zh) 2023-04-21 2023-04-21 一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Country Status (1)

Country Link
CN (1) CN116300117B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN219657956U (zh) * 2023-04-21 2023-09-08 南京波长光电科技股份有限公司 一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0961628A (ja) * 1995-08-28 1997-03-07 Olympus Optical Co Ltd 偏光ハーフミラー
CA2292808C (en) * 1998-12-18 2007-05-15 National Research Council Of Canada Thin film polarizing device having metal-dielectric films
US8047653B2 (en) * 2006-11-10 2011-11-01 Sumitomo Electric Industries, Ltd. Si-O containing hydrogenated carbon film, optical device including the same, and method for manufacturing the Si-O containing hydrogenated carbon film and the optical device
CN110320670A (zh) * 2018-03-30 2019-10-11 中国科学院苏州纳米技术与纳米仿生研究所 全介质反射型高效超薄分束器及其制备方法与应用

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN219657956U (zh) * 2023-04-21 2023-09-08 南京波长光电科技股份有限公司 一种硅基底中波红外带空气间隙的棱镜pbs分束膜

Also Published As

Publication number Publication date
CN116300117A (zh) 2023-06-23

Similar Documents

Publication Publication Date Title
WO2010025536A1 (en) Thin film optical filters with an integral air layer
JP2010060770A (ja) 光学物品及び光学物品の製造方法
CN112063974B (zh) 基于类三明治结构界面和复合材料的二向色镜及其制备方法
US20140071519A1 (en) Optical coupling device having kbbf group crystal coupled with prisms and method for manufacturing same
CN108265269B (zh) 提升多层激光薄膜元件环境稳定性的镀膜方法
US6212014B1 (en) MWIR polarizing beamsplitter cube and method of making the same
CN102037386A (zh) 光学元件及其制造方法
CN116300117B (zh) 一种硅基底中波红外带空气间隙的棱镜pbs分束膜
CN112904461A (zh) 一种紫外波段超低吸收双面增透膜及其制备方法
CN219657956U (zh) 一种硅基底中波红外带空气间隙的棱镜pbs分束膜
CN117666003A (zh) 一种高环境可靠性宽带红外薄膜偏振器
CN114609702B (zh) 一种短波近红外宽带增透膜及其制备方法
CN111830604A (zh) 一种用于玻璃基底的增透减反复合膜及其制备方法
CN112327390B (zh) 基于复合材料的平板型激光分束膜及其设计方法
CN117406313A (zh) 一种法拉第旋光片表面减反射膜及其制备方法
CN219625736U (zh) 一种可调谐中红外高反射膜系统
CN215560681U (zh) 一种二氧化碳激光超硬膜
CN112578481B (zh) 一种大角度中长波红外增透保护膜及其制备方法
CN211236474U (zh) 一种大角度偏振分光棱镜
CN113917573B (zh) 无定形红外膜系结构及其制备方法
JP2007156321A (ja) 光学多層膜フィルタの製造方法
CN113584481A (zh) 一种二氧化碳激光超硬膜及其制备方法
JPH08286034A (ja) 偏光ビームスプリッター
CN119200248A (zh) 一种偏振分光棱镜及其制备方法
CN110927985B (zh) 一种空气隙结构的消偏振分光装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant