CN116263517B - An ultra-narrow-band absorber tunable from visible to mid-infrared - Google Patents
An ultra-narrow-band absorber tunable from visible to mid-infrared Download PDFInfo
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- CN116263517B CN116263517B CN202111514743.7A CN202111514743A CN116263517B CN 116263517 B CN116263517 B CN 116263517B CN 202111514743 A CN202111514743 A CN 202111514743A CN 116263517 B CN116263517 B CN 116263517B
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Abstract
The invention discloses a visible and mid-infrared tunable super-narrow band absorber, which structurally comprises a substrate, a bottom Bragg reflection layer, a resonant cavity layer, a lower electrode, a dielectric spacing layer, an upper electrode, a graphene double-layer structure capable of being mutually and electrostatically grid-controlled and a top Bragg reflection layer. The absorber is based on fabry-perot cavity resonance, forming a resonance mode in the resonant cavity layer between the bottom and top bragg reflection layers. The radiation loss rate of this resonance mode is mainly determined by the constituent components of the bragg reflection layer, the number of periods and the fermi level of graphene, while the absorption loss rate is determined by the fermi level of graphene. The bandwidth of the resonant mode is determined by the magnitude of the radiation loss rate and the absorption loss rate. The critical coupling of the system is achieved by constructing a Bragg reflection layer with proper components and cycle number and regulating and controlling the Fermi level of graphene, so that perfect absorption of visible mid-infrared tunable ultra-narrow band can be realized.
Description
Technical Field
The invention relates to the fields of nano photonics, two-dimensional material light absorption and the like, in particular to a visible mid-infrared tunable ultra-narrow band perfect absorber based on a distributed Bragg mirror microcavity and electrostatic controllable graphene.
Background
Many important applications require very narrow band absorbers such as filters, highly selective thermal emitters, optical sensors and photodetectors. Recently, dynamic tuning of optical properties based on photonic structures has become a research hotspot as a promising approach to achieve active control in high integration optoelectronic devices. Among them, tunable ultra-narrow band perfect absorbers will play an important role in the next generation of active photonic devices. Graphene has attracted wide interest in photonic and optoelectronic applications due to its extraordinary electronic and optical properties, such as broadband light response from ultraviolet to terahertz, and ultra-fast response speeds up to tens of GHz. In particular, the complex conductivity of graphene can be effectively regulated and controlled through electrostatic grid voltage, and has the potential of being used as an active medium of a tunable light absorber. However, many dynamically adjustable ultra-narrow band absorption devices based on graphene and photon structures proposed at present have the problems of incompatibility of optical functions and electrical functions, small working wavelength range, limited spectrum precision and modulation depth caused by absorption of the photon structures. Therefore, how to realize perfect absorption and simultaneously consider characteristics such as ultra-narrow band tunability is a problem to be solved by the novel absorber.
Light absorption regulation and control based on the coupling mode theory provides a new idea for us. Coupling theory describes the general law of coupling between two or more electromagnetic wave modes. Coupling may occur between modes of different electromagnetic waves in the same device or between modes of electromagnetic waves in different devices. The light absorber is essentially dependent on the coupling characteristics of free-space incident light and a localized photon mode. By tuning and matching the radiation loss rate and the absorption loss rate of the sub-mode, the system can reach a critical coupling state with the absorption rate of 100 percent, and the mode can effectively regulate and control the optical field under the sub-wavelength scale. Based on the theory of coupled mode, a plurality of novel functional photon devices are proposed, and the devices have great application potential in various fields such as all-optical integrated chips, optical sensing, optical filters, selective thermal emission devices and the like. According to the invention, by designing the composite structure of the distributed Bragg mirror microcavity and the graphene, based on Fabry-Perot resonance, local field enhancement and critical coupling regulation, the optical field is gathered at the graphene to fully interact with the graphene, so that the light absorption of the graphene is greatly improved. The target wavelength of the absorber is determined by the cavity length of the resonant cavity and the fermi level of the graphene, the radiation loss rate of the resonant mode is mainly determined by the constituent components of the distributed bragg reflection layer, the period number and the fermi level of the graphene, and the absorption loss rate is mainly determined by the complex surface conductivity of the graphene, that is, the fermi level. The fermi level of graphene can be regulated by applying voltages to the upper and lower electrodes. When the fermi energy of the graphene is less than half of the photon energy, the incident light can trigger the interband transition, the fermi energy level is regulated and controlled mainly by the imaginary part of the equivalent refractive index of the graphene, namely the absorption rate of the graphene, and when the fermi energy of the graphene is greater than half of the photon energy, the incident light cannot trigger the interband transition, the fermi energy level is regulated and controlled mainly by the real part of the equivalent refractive index of the graphene, namely the transreflective phase, and finally the absorption peak position is regulated and controlled. Through the regulation and control, the radiation loss rate of the microcavity and the absorption loss rate of the graphene are mutually matched at a specific wavelength, so that the visible-mid infrared absorber with perfect absorption, high integration level, ultra-narrow band and tunable wavelength is realized.
Disclosure of Invention
The invention aims to realize a visible mid-infrared light absorber with perfect absorption, high integration and ultra-narrow band at the same time, and particularly adopts a composite structure of a Bragg reflection mirror micro-cavity and graphene formed by a transparent dielectric material with periodically alternating refractive indexes. The transparent medium material with refractive index periodically and alternately changed forms the Bragg reflector micro-cavity to form the Fabry-Perot cavity structure, so that the intracavity light field is enhanced, and the graphene is placed in the middle of the micro-cavity, so that the graphene can fully interact with the light field. The distributed Bragg reflection layer with proper components and cycle number is constructed, and the radiation loss rate of the distributed Bragg reflection mirror microcavity and the absorption loss rate of the graphene are matched at a target wavelength by regulating and controlling the fermi energy level of the graphene bilayer, so that the system achieves critical coupling, and the ultra-narrow band perfect absorption tunable from visible middle infrared is realized.
The absorber structure comprises a substrate 1, a bottom Bragg reflection layer 2 arranged on the substrate 1, a first graphene layer 3-1 capable of being mutually electrostatically gated, a dielectric spacing layer 3-2 and a second graphene layer 3-3 capable of being mutually electrostatically gated, wherein a resonant cavity 3 is formed on the bottom Bragg reflection layer 2, a lower electrode 4 is arranged on the first graphene layer 3-1 capable of being mutually electrostatically gated, an upper electrode 5 is arranged on the second graphene layer 3-3 capable of being mutually electrostatically gated, and a top Bragg reflection layer 6 is arranged on the resonant cavity 3.
The substrate 1 is a Si substrate with a 300nm thick SiO 2 film on the surface.
The bottom distributed Bragg reflection layer 2 is a multilayer transparent medium material with periodically alternating refractive indexes, the material of the material is a transparent optical medium working in a visible middle infrared band, for different target bands, two transparent medium materials are used for periodically and alternately stacking to form the Bragg reflection layer, the Bragg reflection layer generally comprises two medium materials with different refractive indexes, wherein the refractive index of a low-refractive-index material is n 3, the thickness is h 3, the refractive index of a high-refractive-index material is n 4, the thickness is h 4, the thickness determining method is based on the film interference effect, and when the thickness h 3、h4 of the target wavelength and the transparent optical medium material meets the following formula, the distributed Bragg reflection layer can totally reflect incident light:
where lambda 0 is the target wavelength in free space.
The resonant cavity layer 3 is formed by 3-1, 3-2 and 3-3, and for different target wave bands, different transparent dielectric materials are used for forming the resonant cavity, and the thickness h 1 of the resonant cavity layer is determined by a Fabry-Perot Luo Qiangqiang long formula:
The first graphene layer 3-1 capable of being mutually and electrostatically gated is monoatomic layer graphene grown by mechanical stripping or by a Chemical Vapor Deposition (CVD) method. Graphene exhibits p-type doping characteristics in air, with fermi levels typically 200-400meV below the dirac point. Considering the degradation of the quality of graphene grown by Chemical Vapor Deposition (CVD) transferred by wet chemical methods, the mobility is typically 200-400cm 2/(V s), which is located in the middle of the cavity and in contact with the lower electrode, and mutual electrostatic gating is achieved by the voltages applied to the upper and lower electrodes.
The dielectric spacing layer 3-2 is a SiO 2、Al2O3 or HfO 2 thin film layer, and the thickness of the dielectric spacing layer is h 2 =20 nm.
The second graphene layer 3-3 capable of being mutually and electrostatically gated is monoatomic layer graphene grown by mechanical stripping or by a Chemical Vapor Deposition (CVD) method. Graphene exhibits p-type doping characteristics in air, with fermi levels typically 200-400meV below the dirac point. Considering the degradation of the quality of graphene grown by Chemical Vapor Deposition (CVD) transferred by wet chemical methods, the mobility is typically 200-400cm 2/(V s), which is located in the middle of the resonator and in contact with the upper electrode, and mutual electrostatic gating is achieved by applying voltages to the upper and lower electrodes.
The lower electrode 4 is an Au electrode.
The upper electrode 5 is an Au electrode.
The top Bragg reflection layer 6 is a multilayer transparent medium material with periodically alternating refractive indexes, the material of the multilayer transparent medium material is a transparent optical medium working in a visible middle infrared band, for different target bands, two transparent medium materials are used for periodically and alternately stacking to form a distributed Bragg reflection layer, the distributed Bragg reflection layer generally comprises two medium materials with different refractive indexes, wherein the refractive index of a low-refractive-index material is n 3, the thickness is h 3, the refractive index of a high-refractive-index material is n 4, the thickness is h 4, and the thickness determination method is based on the film interference effect, when the target wavelength and the thickness h 3、h4 of the transparent optical medium material meet the following formula, the distributed Bragg reflection layer can fully reflect incident light:
Where lambda 0 is the wavelength in free space.
The invention has the advantages that:
1 in the structure, bottom and top Bragg reflection layers form a Fabry-Perot cavity, a graphene double layer capable of being mutually and electrostatically gated and a dielectric interval are positioned at the middle optical field gathering part of a resonant cavity, the target absorption wavelength is controlled by setting the thickness of the Fabry-Perot cavity, the radiation loss rate of the microcavity is controlled by constructing the distributed Bragg reflection layers with proper components and cycle numbers, and the effective thickness and the absorption loss rate of the microcavity are regulated and controlled by regulating and controlling the fermi energy level of the graphene double layer, so that the system radiation loss rate and the absorption loss rate are matched at the target wavelength to achieve critical coupling, and 100% absorption is realized.
2, By changing the components and the cycle number of the transparent dielectric materials forming the bottom and the top Bragg reflection layers, the radiation loss rate of the resonance mode can be obviously reduced, namely, an extremely high radiation loss quality factor can be obtained, and meanwhile, the absorption loss rate is reduced by regulating and controlling the Fermi level of the graphene, so that the graphene is matched with the radiation loss rate, and thus, the ultra-narrow band 100% absorption is realized.
3, Through the voltage applied to the graphene double layers capable of mutually and electrostatically grid-controlling, the fermi level of the graphene double layers can be regulated and controlled, and the regulation and control range of the graphene fermi surface is enlarged through selecting the dielectric spacer layer with higher electrostatic strength.
And 4, when the Fermi energy of the graphene is greater than half of the photon energy, the incident light cannot excite the interband transition, and the Fermi energy level is regulated and controlled mainly by regulating and controlling the real part of the equivalent refractive index of the graphene, namely regulating and controlling the transflector phase, so that the regulation and control of the absorption peak position wavelength of the target wave band is realized.
Drawings
FIG. 1 is a schematic diagram of a mid-infrared tunable ultra-narrow band absorber from the visible;
FIG. 2 is a spectrum chart of graphene absorption rate along with wavelength and graphene fermi level change of graphene calculated by a time domain finite difference algorithm at a target wavelength of 550nm in a visible band;
FIG. 3 is a spectrum diagram of graphene absorption rate along with wavelength and graphene fermi level change of graphene at 1550nm of target wavelength in a near infrared band calculated by using a time domain finite difference algorithm;
FIG. 4 is a spectrum diagram of graphene absorption rate along with wavelength and graphene fermi level change at a target wavelength of 5000nm of a mid-infrared band of graphene calculated by a time domain finite difference algorithm;
Fig. 5 is a spectrum diagram of graphene absorption rate along with wavelength and graphene fermi level change at 10000nm of a target wavelength of a mid-infrared band of graphene calculated by using a time domain finite difference algorithm.
Detailed Description
The invention provides a preparation method of a visible and middle infrared tunable ultra-narrow band perfect absorber. For convenience of description, the following will take a composite structure working at 550nm as an example, and the following will describe the specific embodiment of the present invention in detail with reference to the accompanying drawings:
1 first, 6 pairs of TiO 2/SiO2 transparent dielectric materials were deposited by Chemical Vapor Deposition (CVD) on 300nm thick SiO 2 film and Si substrate, where TiO 2 has a thickness of h 3＝64nm,SiO2 and a thickness of h 4 =93 nm, which constitutes the bottom bragg reflector mirror microcavity.
2 Depositing SiO 2 with a thickness of h 1/2=93 nm on the bottom distributed bragg mirror microcavity forms part of the resonator layer.
3 Monoatomic layer graphene grown by Chemical Vapor Deposition (CVD) is transferred onto the resonator layer. Cr (20 nm)/Au (90 nm) is deposited by electron beam evaporation with the help of a stencil mask to form the lower level.
4 Then forming a HfO 2 layer of h 2 = 20nm onto the monoatomic layer graphene using Atomic Layer Deposition (ALD).
5 Monoatomic layer graphene grown by Chemical Vapor Deposition (CVD) is transferred onto HfO 2. Cr (20 nm)/Au (90 nm) is deposited by an electron beam evaporation method with the help of a template mask to form a power-on level.
6 Depositing SiO 2 with a thickness of h 1/2=93 nm on the monoatomic layer graphene constitutes another part of the resonant cavity layer.
7 Depositing 5 pairs of TiO 2/SiO2 transparent dielectric materials on the resonant cavity layer by Chemical Vapor Deposition (CVD), wherein the thickness of TiO 2 is h 3＝64nm,SiO2 and the thickness is h 4 =93 nm, and forming the mirror microcavity of the top Bragg reflection layer.
Description of the preferred embodiments
The resonant wavelength of the graphene-based ultra-narrow-band perfect absorber integrated by the Bragg reflector microcavity is 550nm, the transparent dielectric materials forming the bottom and top Bragg reflector microcavities and periodically and alternately changing the refractive indexes are TiO 2 and SiO 2, and the resonant cavity layer is formed by using SiO 2, wherein the dielectric spacer layer adopts HfO 2, and single-layer graphene covers the upper surface and the lower surface of the dielectric spacer layer, electrodes are arranged on the single-layer graphene, and electrostatic regulation and control are convenient. The size of the transparent dielectric material of the structure is h 1＝186nm,h2＝20nm,h3＝64nm,h4 =93 nm through electromagnetic simulation optimization. Fig. 2 shows that the bragg reflector micro-cavity integrated graphene-based ultra-narrow band perfect absorber forms a fabry-perot resonance mode by the bottom bragg reflecting layer and the top bragg reflecting layer under the irradiation of incident light, so that an optical field is gathered in the middle of a resonant cavity, namely, the positions of two single-layer graphenes are located, the interaction length of graphenes and light is enhanced, and the light absorption of the structure reaches 100% perfect absorption. As shown in fig. 2, the absorption intensity of graphene decreases with an increase in fermi level. When the resonance wavelength of the graphene-based ultra-narrow-band perfect absorber integrated by the Bragg reflector micro-cavity is moved to near infrared 1550nm, the Bragg reflection layers at the bottom and the top are made of 10 pairs of transparent dielectric materials TiO 2 and SiO 2, wherein a dielectric spacing layer is made of HfO 2, and single-layer graphene is covered on the upper surface and the lower surface of the dielectric spacing layer. The size of the transparent dielectric material of the structure is h 1＝528nm,h2＝20nm,h3＝188nm,h4 =264 nm through electromagnetic simulation optimization. In fig. 3, it can be seen that the absorption peak wavelength of graphene varies with the fermi level of graphene, when the fermi energy of graphene is greater than half of the photon energy, the incident light cannot excite the interband transition, and the regulation of the fermi level is mainly represented by the regulation of the real part of the equivalent refractive index of graphene, that is, the regulation of the transflector phase, so that the regulation of the absorption peak wavelength of the target band is realized. Compared with the visible wave band, the number of periods of the transparent medium forming the bottom and top Bragg reflection layers is increased, the radiation loss rate of the resonance mode is obviously reduced, and the extremely high radiation loss quality factor can be obtained. for the mid-infrared band 5 μm, the transparent dielectric materials that make up the bottom and top Bragg reflection layers are Si and Si 3N4, with bottom 9 vs Si/Si 3N4 and top 8 vs Si/Si 3N4. The dielectric spacer layer adopts HfO 2, and a single-layer graphene is covered on the upper surface and the lower surface of the dielectric spacer layer. the size of the transparent dielectric material of the structure is h 1＝1072nm,h2＝20nm,h3＝365nm,h4 =536 nm, and as shown in fig. 4, the absorption of graphene reaches ultra-narrow band perfect absorption at the target wavelength of 5000 nm. For another mid-infrared band of 10 μm, the transparent dielectric materials that make up the bottom and top Bragg reflection layers are Si and ZnSe, with the bottom 8 vs Si/ZnSe and the top 7 vs Si/ZnSe. The dielectric spacer layer adopts HfO 2, and a single-layer graphene is covered on the upper surface and the lower surface of the dielectric spacer layer. The size of the transparent dielectric material of the structure is h 1＝2090nm,h2＝20nm,h3＝731nm,h4 =1045 nm through electromagnetic simulation optimization. As shown in fig. 5, the absorption of graphene reaches ultra-narrow band perfect absorption at the target wavelength 10000 nm.
Claims (1)
1. A visible-to-mid infrared tunable ultra-narrow band absorber, characterized by:
The absorber structure is characterized in that a bottom Bragg reflection layer (2) is arranged on a substrate (1), a resonant cavity (3) formed by a first graphene layer (3-1) capable of being mutually electrostatically grid-controlled, a dielectric spacing layer (3-2) and a second graphene layer (3-3) capable of being mutually electrostatically grid-controlled is arranged on the bottom Bragg reflection layer (2), a lower electrode (4) is arranged on the first graphene layer (3-1) capable of being mutually electrostatically grid-controlled, an upper electrode (5) is arranged on the second graphene layer (3-3) capable of being mutually electrostatically grid-controlled, and a top Bragg reflection layer (6) is arranged on the resonant cavity (3);
the substrate (1) is a Si substrate with a SiO 2 film with the thickness of 300nm on the surface;
The resonant cavity layer (3) comprises a first mutually electrostatically-controllable graphene layer (3-1), a dielectric spacing layer (3-2) and a second mutually electrostatically-controllable graphene layer (3-3), wherein the first mutually electrostatically-controllable graphene layer (3-1) is monoatomic layer graphene which is positioned on the bottom Bragg reflection layer (2), the dielectric spacing layer (3-2) is a SiO 2、Al2O3 or HfO 2 thin film layer which is positioned on the first mutually electrostatically-controllable graphene layer (3-1) and has the thickness of h 2 =20 nm, and the second mutually electrostatically-controllable graphene layer (3-3) is monoatomic layer graphene which is positioned on the dielectric spacing layer (3-2);
The lower electrode (4) is an Au electrode;
The upper electrode (5) is an Au electrode.
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| CN103091870A (en) * | 2013-01-25 | 2013-05-08 | 中国科学院半导体研究所 | Resonant cavity enhanced grapheme electric absorption modulator |
| CN104020589A (en) * | 2014-05-27 | 2014-09-03 | 南昌大学 | Graphene electro-optical modulator structure |
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| US9293627B1 (en) * | 2012-12-03 | 2016-03-22 | Sandia Corporation | Sub-wavelength antenna enhanced bilayer graphene tunable photodetector |
| CN108011287A (en) * | 2016-10-31 | 2018-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of saturable absorbing mirror of composite construction |
| US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
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| CN110727126B (en) * | 2019-11-18 | 2020-10-02 | 华中科技大学 | Double narrow band near-infrared absorber based on graphene electric tuning |
| CN110927843B (en) * | 2019-12-23 | 2021-11-26 | 中国人民解放军国防科技大学 | Adjustable perfect wave absorber based on graphene photonic crystal structure |
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| CN103091870A (en) * | 2013-01-25 | 2013-05-08 | 中国科学院半导体研究所 | Resonant cavity enhanced grapheme electric absorption modulator |
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