CN116165837A - Optical proximity correction method and system, mask, equipment and storage medium - Google Patents

Abstract

An optical proximity correction method and system, a mask, equipment and a storage medium, wherein the method comprises the following steps: providing an initial layout layer, wherein the initial layout layer comprises a plurality of graph rows arranged along a first direction, each graph row comprises a plurality of graphs regularly arranged along a second direction, and the first direction is perpendicular to the second direction; splitting the initial layout layer into a first layout layer and a second layout layer, placing the pattern rows adjacent at intervals in the first layout layer, and placing the rest pattern rows in the second layout layer; splitting the first layout layer into a third layout layer and a fourth layout layer, arranging adjacent graphs at intervals in each graph row of the first layout layer in the third layout layer, and arranging the rest graphs in the fourth layout layer; splitting the second layout layer into a fifth layout layer and a sixth layout layer, placing adjacent graphs at intervals in each graph row of the second layout layer in the fifth layout layer, and placing the rest graphs in the sixth layout layer. The invention improves the optical proximity correction effect and saves the process cost.

Description

Optical proximity correction method and system, mask, equipment and storage medium

technical field

Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to an optical proximity correction method and system, a mask, equipment, and a storage medium.

Background technique

In order to transfer the pattern from the mask to the surface of the silicon wafer, an exposure step, a development step after the exposure step, and an etching step after the development step are usually required. In the exposure step, light is irradiated onto the silicon wafer coated with photoresist through the light-transmitting area of the mask, and the photoresist reacts chemically under the irradiation of light; The difference in the degree of dissolution of the photoresist to the developer forms a photoresist pattern, and realizes the transfer of the pattern from the mask to the photoresist; in the etching step, the photoresist pattern formed based on the photoresist layer is The silicon wafer is etched, and the pattern of the mask plate is further transferred to the silicon wafer.

With the rapid development of integrated circuit design, the size of the mask layout is shrinking day by day, and the optical proximity effect is becoming more and more obvious. When the feature size of the exposure line is close to the theoretical resolution limit of the exposure system, the photolithographic imaging will be seriously distorted. , resulting in a serious decline in the quality of photolithographic patterns. Currently, a multi-patterning (MP) technique is used to split the mask layout to reduce the influence of the optical proximity effect.

Contents of the invention

The problem to be solved by the embodiments of the present invention is to provide an optical proximity correction method and system, a mask, a device, and a storage medium, which can save process costs while improving the effect of optical proximity correction.

In order to solve the above problems, an embodiment of the present invention provides an optical proximity correction method, including: providing an initial layout layer, the initial layout layer includes a plurality of graphic lines arranged along the first direction, and each of the graphic lines includes A plurality of graphics regularly arranged along the second direction, the first direction being perpendicular to the second direction; splitting the initial layout layer into a first layout layer and a second layout layer, for separating all adjacent layout layers Said graphic lines are placed in the first version of the layer, and the remaining said graphic lines are placed in the second version of the layer; the first version of the layer is split into a third version of the layer and a fourth version of the layer for the first version In each of the graphics rows of the layout layer, the adjacent graphics are placed in the third layout layer, and the remaining graphics are placed in the fourth layout layer; the second layout layer is split into fifth layout layers. The version layer and the sixth version layer are used to place the graphics next to each other in the row of the second version of the graphics in the fifth version of the layer, and place the remaining graphics in the sixth version of the layer ; Wherein, the third version of the layer, the fourth version of the layer, the fifth version of the layer and the sixth version of the layer are used to perform optical proximity correction independently.

Correspondingly, an embodiment of the present invention also provides an optical proximity correction system, including: a layout layer providing module, configured to provide an initial layout layer, the initial layout layer including a plurality of rows of graphics arranged along the first direction, each of which The graphics rows all include a plurality of graphics regularly arranged along the second direction, and the first direction is perpendicular to the second direction; the first layout layer splitting module is used to split the initial layout layer into a first layout layer and the second version of the layer, for placing the graphic lines adjacent to each other in the first version of the layer, and placing the rest of the graphic lines in the second version of the layer; the second version of the layer splitting module, used for Splitting the first version of the layer into a third version of the layer and a fourth version of the layer, for placing the graphics adjacent to each other in the first version of the layer in the third version of the layer , the rest of the graphics are placed in the fourth version of the layer; the third version of the layer splitting module is used to split the second version of the layer into the fifth version of the layer and the sixth version of the layer, and is used to split the second version of the layer In each row of the graphics, the adjacent graphics are placed in the fifth version of the layer, and the remaining graphics are placed in the sixth version of the layer; wherein, the third version of the layer, the fourth version of the layer, Version 5 layers and version 6 layers are used to perform optical proximity correction individually.

Correspondingly, an embodiment of the present invention also provides a mask, including the pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

Correspondingly, an embodiment of the present invention also provides a device, including at least one memory and at least one processor, the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor Execute to realize the optical proximity correction method provided by the embodiment of the present invention.

Correspondingly, an embodiment of the present invention further provides a storage medium, the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

Compared with the prior art, the technical solutions of the embodiments of the present invention have the following advantages:

In the optical proximity correction method provided in the embodiment of the present invention, the initial layout layer includes a plurality of graphic rows arranged along the first direction, and each of the graphic rows includes a plurality of graphics regularly arranged along the second direction, That is, the graphics in the initial layout layer are arranged regularly, the initial layout layer is split into the first layout layer and the second layout layer, the adjacent graphics lines are placed in the first layout layer, and the remaining When the graphic lines are placed in the second layout layer, the spacing between adjacent graphics along the first direction increases, and at the same time, the splitting is regular, and the graphics lines are alternately located in the first layout layer and the second layout layer In the layer, the first version of the layer is split into the third version of the layer and the fourth version of the layer, and each of the graphics rows of the first version of the layer, the graphics adjacent to each other are placed in the third layout In the layer, if the rest of the graphics are placed in the fourth version of the layer, the distance between the rows of adjacent graphics along the second direction increases, and at the same time, the splitting is also regular, and the graphics are alternately located in the third In the version layer and the fourth version layer, similarly, the second version layer is split into the fifth version layer and the sixth version layer, so that in the second version layer, the adjacent graphic lines along the second direction The spacing increases, and at the same time, the splitting also has regularity. Therefore, the embodiment of the present invention splits the initial layout layers regularly arranged in graphics. Compared with the random splitting scheme of the prior art, this The embodiment of the invention avoids the large damage to the pattern of graphics in the initial layout layer caused by random splitting, and uses regular splitting to make the split third, fourth, fifth and fourth layout layers In the six-page layer, while the distance between adjacent graphics is large, the graphics in each layer are still regularly arranged, so that the third-page layer, the fourth-page layer, the fifth-page layer and the sixth-page layer The distribution of graphics in the layer is more uniform, which is conducive to improving the effect of subsequent optical proximity correction on the third version layer, the fourth version layer, the fifth version layer and the sixth version layer, thereby helping to improve the lithography of the graphics. Moreover, the embodiment of the present invention can avoid too many split times due to random split by adopting the regular split adapting to the graphic arrangement rule of the initial layout layer, which is beneficial to obtain less split The number of times, so that the initial layout layer is split into a smaller number of layout layers, which is conducive to saving process costs.

Description of drawings

Fig. 1 is a flow chart of an optical proximity correction method;

2 to 3 are schematic diagrams corresponding to each step in an optical proximity correction method;

4 is a flowchart of an embodiment of the optical proximity correction method of the present invention;

5 to 13 are schematic diagrams corresponding to each step in an embodiment of the optical proximity correction method of the present invention;

Fig. 14 is a functional block diagram of an embodiment of the optical proximity correction system of the present invention;

Fig. 15 is a hardware structural diagram of an embodiment of a device provided by the present invention.

Detailed ways

At present, the effect of optical proximity correction needs to be improved. Combining with an optical proximity correction method, the reasons for improving the effect of optical proximity correction and saving process cost are analyzed.

Fig. 1 is a flowchart of an optical proximity correction method. With reference to FIGS. 2 to 3, a schematic diagram corresponding to each step in the optical proximity correction method is shown, and the optical proximity correction method includes:

Referring to FIG. 2, FIG. 2 is a schematic diagram corresponding to step s1. Step s1: provide an initial layout layer (not marked), and the initial layout layer includes a plurality of first layout layers alternately arranged along the first direction (as shown in the X direction in FIG. 2 ). A graphic row 10 and a second graphic row 20, each first graphic row 10 includes a plurality of first graphics 11 arranged along a second direction (as shown in the Y direction in Figure 2), and a plurality of first graphics 11 are arranged in a first pattern, and each second pattern row 20 includes a plurality of second patterns 21 arranged in a second direction, and a plurality of second patterns 21 are arranged in a second pattern, and the first direction is perpendicular to second direction. Wherein, for the convenience of illustration, the first graphic row 10 and the second graphic row 20 are distinguished by dotted lines.

Referring to FIG. 3 , FIG. 3 is a schematic diagram corresponding to step s2. Step s2: perform layout layer splitting processing, split the initial layout layer into multiple sub-layout layers (not marked), and separate the first graphics 11 and the second graphics 21 They are respectively set on one of the sub-layers.

For example, as shown in Figure 3, taking the initial layout layer split into five sub-version layers as an example, each sub-version layer is the first sub-version layer, the second sub-version layer, the third sub-version layer, and the fourth sub-version layer layer and the fifth subversion layer.

The layout layer splitting process usually splits the initial layout layer by random splitting, and the first graphics 11 and the second graphics 21 in the initial layout layer are arranged regularly, then the random splitting of the initial layout layer It is easy to cause great damage to the pattern of the graphics in the initial layout layer, which makes it difficult to maintain a regular arrangement of the graphics in each sub-version layer, and easily leads to uneven distribution of the first graphics 11 and the second graphics 21 in the sub-version layer And relatively messy, so after the optical proximity correction is performed on each sub-plate layer, it is easy to greatly damage the original rules of the first pattern 11 and the second pattern 21, thereby affecting the photolithography of the first pattern 11 and the second pattern 21 In addition, it is difficult to find the optimal number of splits that adapt to the graphic law of the initial layer, and it is easy to cause too many splits, so that the initial layer is split into more The number of sub-plate layers is wasted to save process costs.

In order to solve the technical problem, an embodiment of the present invention provides an optical proximity correction method. Referring to FIG. 4 , a flow chart of an embodiment of the optical proximity correction method of the present invention is shown.

In this embodiment, the optical proximity correction method includes the following basic steps:

Step S1: providing an initial layout layer, the initial layout layer includes a plurality of graphic rows arranged along the first direction, each of the graphic rows includes a plurality of graphics regularly arranged along the second direction, the first the direction is perpendicular to the second direction;

Step S2: splitting the initial layout layer into a first layout layer and a second layout layer, for placing adjacent graphic rows in the first layout layer, and placing the remaining graphics rows in the second layout layer In the second version layer;

Step S3: Split the first version of the layer into a third version of the layer and a fourth version of the layer, for placing the adjacent graphics in each row of the first version of the layer in the third In the layout layer, the rest of the graphics are placed in the fourth layout layer;

Step S4: Split the second version of the layer into a fifth version of the layer and a sixth version of the layer, for placing the adjacent graphics in the second version of each graphic row in the fifth version In the version layer, the rest of the graphics are placed in the sixth version layer;

Wherein, the layer of the third version, the layer of the fourth version, the layer of the fifth version and the layer of the sixth version are used to perform optical proximity correction independently.

In order to make the above objects, features and advantages of the embodiments of the present invention more comprehensible, specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

5 to 13 are schematic diagrams corresponding to each step in an embodiment of the optical proximity correction method of the present invention.

Referring to FIG. 5, step S1 is performed: providing an initial layout layer (not marked), the initial layout layer includes a plurality of graphic rows (not marked) arranged along the first direction (as shown in the X direction in FIG. 5 ), each graphic Each row includes a plurality of patterns (not shown) regularly arranged along the second direction (shown as the Y direction in FIG. 5 ), and the first direction is perpendicular to the second direction. Wherein, for the convenience of illustration, a plurality of graphic lines are distinguished by dotted lines.

The pattern of the initial layout layer is the target pattern transferred to the wafer. After optical proximity correction is performed on the pattern of the initial layout layer, the obtained pattern is used to make a mask, so that a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

In this embodiment, the graphics in the initial layout layer are regularly arranged, so the initial layout layer is a layout layer with regularly arranged graphics, so that the regular split method is adopted for the initial layout layer, which is beneficial to reduce the impact on the initial layout layer. The destruction of the original pattern of the layout layer.

In this embodiment, the multiple graphic rows include a plurality of first graphic rows 100 and second graphic rows 200 alternately arranged along the first direction, and each first graphic row 100 includes a plurality of first pattern 110, and a plurality of first patterns 110 are arranged in a first pattern, and each second pattern row 200 includes a plurality of second patterns 210 arranged along a second direction, and a plurality of second patterns 210 are arranged in a first pattern The second regular arrangement.

In this embodiment, the plurality of first graphic rows 100 and second graphic rows 200 are regularly arranged in the first direction, therefore, the initial layout layer has a higher graphic regularity, so that the subsequent initial layout layer adopts The regular splitting method reduces the damage to the original pattern of the initial layout layer, and has a more significant effect on better transferring the first pattern 110 and the second pattern 210 to the wafer.

In the field of semiconductors, some structures in the semiconductor structure may have regularity, for example, regularly arranged metal wires, and partition structures for cutting regularly arranged metal wires. The metal wires usually extend along one direction and The rule of arrangement along the other direction, correspondingly, the partition structure is used to cut the metal wire, then the partition structure usually also follows the rule of extending in one direction and arranged in the other direction, therefore, as an example, the second rule It is: in each second pattern row 200, a plurality of second patterns 210 are located on the same straight line; when the partition structures in the same row are used to cut off different metal lines, the partition structures in the same row will not all be located in the same metal line Therefore, as an example, the first rule is: in each first graphic row 100 , the multiple first graphics 110 are not all located on the same straight line.

In this embodiment, in the first pattern row 100, a plurality of first patterns 110 are alternately arranged up and down in the first direction, and the adjacent first patterns 110 are located on the same straight line, then the first pattern row 100 The first pattern 110 in the above can be used to form target patterns alternately arranged up and down in the first direction on the wafer, and the adjacent target patterns are located on the same straight line. Rows of partition structures are used to cut off different metal wires, while adjacent partition structures are used to cut off the same metal wires.

It should be noted that the adjacent first graphics 110 are located on the same straight line means that in the first graphic row 100, for any first graphic 110, the first graphics 110 located on both sides and adjacent to it are located on the same straight line.

In this embodiment, in the first direction, among the plurality of first pattern rows 100, adjacent first patterns 110 are located on the same straight line along the first direction, so that the first patterns 110 are not only regularly distributed in the second direction , and the distribution is also regular in the first direction, therefore, the regularity of the first graphic 110 is relatively high.

Referring to FIG. 5 , in this embodiment, the initial layout layer is a layout layer for forming an SRAM device, and both the first pattern 110 and the second pattern 210 are cut-off patterns of source and drain leads.

The SRAM device is a device with a highly regular structure, and the source-drain lead cutting pattern is used to form the source-drain lead isolation structure in the SRAM device.

Specifically, the SRAM device includes a plurality of memory cell areas arranged in a matrix along a first direction and a second direction.

Correspondingly, the memory cell area includes centrally symmetrical sub-unit areas, and each sub-unit area includes a transfer gate transistor area, a pull-down transistor area and a pull-up transistor area. Wherein, the pass-gate transistor region and the pull-down transistor region are arranged adjacent to each other in the first direction, and the pass-gate transistor region and the pull-down transistor region are arranged adjacent to the pull-up transistor region in the second direction.

It should be noted that the pass-gate transistor region is used to form a pass-gate transistor, the pull-down transistor region is used to form a pull-down transistor, and the pull-up transistor region is used to form a pull-up transistor.

Therefore, in the subunit region, along the first direction, the pull-down transistor and the pass-gate transistor share a channel structure (for example, a fin), and are arranged in parallel with the channel structure of the pull-up transistor along the second direction. direction, the pull-up transistor and the pull-down transistor share a gate structure, and are arranged parallel to the gate structure of the pass-gate transistor along the first direction, and the source-drain doped layer is located in the channel structure on both sides of the gate structure, correspondingly, In the subunit area, the source-drain doped layers are arranged in source-drain rows along the second direction, and the source-drain rows are arranged in parallel along the first direction.

Correspondingly, the source-drain wires are located above the source-drain doped layer, and are used to lead out the source-drain doped layer electrically, and the source-drain wire isolation structure is used to cut off the source-drain wires, so that the cut-off pattern of the source-drain wires is arranged along the second direction into cut-off rows, and the cut-off rows are arranged in parallel along the first direction.

Correspondingly, in the SRAM device, for the source-drain lead cutting pattern that cuts off the same source-drain lead, the source-drain lead cutting pattern is located on the same straight line, and for the source-drain lead cutting pattern that cuts two parallel source-drain leads, the source-drain lead cutting pattern is The lead cut patterns are alternately arranged up and down in the first direction, and the adjacent source and drain lead cut patterns are located on the same straight line. Therefore, in the SRAM device, the source and drain lead cut patterns have a first pattern 110 and a second pattern 210 Graphical arrangement rules.

Continue to refer to Figure 5. After the initial layout layer is provided, before the initial layout layer is subsequently split into the first layout layer and the second layout layer, it also includes: providing a reference layout layer. The reference layout layer includes multiple layouts along the first direction. Each reference pattern row 300 includes a plurality of reference patterns 310 arranged along the second direction, and the plurality of reference patterns 310 are all located on the same straight line, and the reference patterns 310 are gate lead patterns.

In this embodiment, the reference graphic 310 is used as a reference condition for subsequent splitting of the first version of the layer.

The gate lead pattern is used to form the gate lead on the top of the gate structure, and is used to lead out the electrical properties of the gate structure. As can be seen from the foregoing, in the SRAM device, the gate structure extends along the first direction and extends along the second direction. Arranged in parallel, the gate lead patterns are arranged as reference patterns 310 along the second direction to form reference pattern rows 300, and the reference pattern rows 300 are arranged in parallel along the first direction.

In this embodiment, the gate lead is located at the top of the gate structure, the source-drain lead is located at the top of the source-drain doped layer, and the source-drain lead isolation structure is used to cut off the source-drain lead. The characteristics of the graph contact.

As an example, the reference pattern layer is overlapped with the initial pattern layer, and in the first pattern row 100 , adjacent first patterns 110 are in contact with the reference pattern 310 .

With reference to Figures 6 to 8, step S2 is performed: the initial layout layer is split into a first layout layer (not marked) and a second layout layer (not marked), which are used to place adjacent graphic lines at intervals in the first In the second version layer, place the remaining graphics lines in the second version layer. Among them, Fig. 7 and Fig. 8 are respectively the first version layer and the second version layer that were split.

It should be noted that placing adjacent graphic lines at intervals in the layer of the first version means that, for any graphic line, the graphic lines located on both sides thereof and adjacent to it are placed in the layer of the first version.

In this embodiment, the splitting of the initial layout layer is regular, and the graphics lines are alternately placed in the first layout layer and the second layout layer, which has little damage to the original graphics pattern of the initial layout layer, and the first layout layer The distribution of graphic lines in the first layer and the second layer is also relatively uniform, which helps to reduce the damage to the original pattern of the initial layer by the subsequent photolithography process.

In this embodiment, in the step of splitting the initial layout layer into the first layout layer and the second layout layer, the first graphics row 100 is placed in the first layout layer, and the second graphics row 200 is placed in the second layout layer layer.

In this embodiment, splitting increases the spacing between adjacent patterns along the first direction, which is beneficial to improving the subsequent lithography quality of adjacent patterns in the first direction. At the same time, the splitting has higher regularity. Putting the graphics that follow the same rule in the same layout layer will cause less damage to the original graphics rules of the initial layout layer, and the distribution of graphics in the first layout layer and the second layout layer will be more uniform, which is further conducive to Reduce the damage to the original pattern of the original pattern layer in the subsequent photolithography process.

With reference to Figures 9 to 13, step S3 is performed: splitting the first layout layer into a third layout layer (not marked) and a fourth layout layer (not marked), for each graphic line of the first layout layer In , the graphics adjacent to each other are placed in the third version of the layer, and the remaining graphics are placed in the fourth version of the layer. Among them, Fig. 10 and Fig. 11 are respectively the split third and fourth version layers.

It should be noted that placing adjacent figures at intervals in the layer of the third version means that in the row of figures, for any figure, the figures located on both sides and adjacent to it are placed in the layer of the third version.

In this embodiment, the splitting of the first version of the layer has regularity, and the regularly arranged graphics are alternately placed in the third version of the layer and the fourth version of the layer, which has little damage to the original pattern of the first version of the layer. Moreover, the distribution of graphic lines in the third and fourth version layers is relatively uniform, which is beneficial to reducing the damage to the pattern pattern of the first version layer by the subsequent photolithography process.

Correspondingly, in this embodiment, in the step of splitting the first layout layer into the third layout layer and the fourth layout layer, in each first graphics row 100, the adjacent first graphics 110 are placed in the first graphics row 100 In the third layout layer, the remaining first graphics 110 are placed in the fourth layout layer.

In this embodiment, splitting increases the spacing between adjacent first pattern rows 100 along the second direction, which is conducive to improving the subsequent lithographic quality of the first pattern rows 100 adjacent along the second direction. At the same time, The split also has regularity, the first graphic 110 is alternately located in the third and fourth version layers, and the damage to the first pattern of the first graphic 110 is small, and the third and fourth version layers in the third version layer The distribution of a pattern 110 is also relatively uniform, which is beneficial to reduce damage to the original pattern pattern of the initial layout layer in the subsequent photolithography process.

In this embodiment, in the step of splitting the first version layer into the third version layer and the fourth version layer, the first graphic 110 in contact with the reference graphic row 300 is placed in the third version layer, and the The first graphics 110 that are in contact with the reference graphic row 300 are placed in the fourth layout layer, or the first graphics 110 that are in contact with the reference graphic row 300 are placed in the fourth layout layer, and the first graphics 110 that are not in contact with the reference graphic row 300 are placed in the fourth layout layer. The first graphic 110 is placed in the layer of the third version.

Since in this embodiment, in the first pattern row 100, the adjacent first patterns 110 are in contact with the reference pattern 310, therefore, the first pattern 110 in contact with the reference pattern row 300 is placed in the third layout layer , place the first graphics 110 that are not in contact with the reference graphic row 300 in the fourth layout layer, or place the first graphics 110 that are in contact with the reference graphic row 300 in the fourth layout layer, and place the first graphics 110 that are not in contact with the reference graphic row 300 in the fourth layout layer. The first graphics 110 contacted by the row 300 are placed in the third version of the layer, that is, in each first graphic row 100, the adjacent first graphics 110 are placed in the third version of the layer, and the remaining first graphics 110 is placed in the layer of the fourth edition, forming a regular split.

Moreover, in this embodiment, by using whether it is in contact with the reference pattern row 300 as a reference condition, there is no need to additionally set the algorithm for selecting adjacent first patterns 110 in the first pattern row 100, which simplifies the splitting of the first pattern. The splitting process of the layout layer saves the cost of the optical proximity correction process.

In this embodiment, the step of splitting the first version layer into the third version layer and the fourth version layer includes: in the first direction, dividing the first graphics 110 located on the same straight line into alternately arranged first graphics group (not marked) and the second graphic group (not marked), the first graphic group and the second graphic group both include N first graphics 110, wherein, N is a positive integer, and N is less than or equal to the first graphic row 100 The total quantity; place the first graphic group and the second graphic group in the third version layer and the fourth version layer respectively.

It should be noted that the first graphic group and the second graphic group refer to adjacent graphic groups that contain the same number of first graphics 110 .

In this embodiment, along the first direction, a plurality of first figures 110 are also regularly arranged. Therefore, in this embodiment, the first figures 110 located on the same straight line are divided into alternately arranged first figure groups and second graphic group, and the first graphic group and the second graphic group are respectively placed in the third version layer and the fourth version layer, then the first version layer is also regularly split in the first direction, so that the second version layer The damage to the original pattern of the first version of the layer is small, and the distribution of the graphics in the first and second version of the layer is also more uniform, which is conducive to reducing the impact of the subsequent photolithography process on the original pattern of the initial version of the layer. destruction.

Continue to refer to Fig. 9 to Fig. 13, execute step S4: split the second version layer into the fifth version layer and the sixth version layer, for separating adjacent graphics in each graphic row of the second version layer Place it in the layer of the fifth edition, and place the rest of the graphics in the layer of the sixth edition. Among them, Fig. 12 and Fig. 13 are respectively the split fifth and sixth edition layers.

It should be noted that placing adjacent figures at intervals in the layer of the fifth version means that, in the row of figures, for any figure, the figures located on both sides and adjacent to it are placed in the layer of the fifth version.

In this embodiment, the splitting of the second version of the layer has regularity, and the regularly arranged graphics are alternately placed in the fifth version of the layer and the sixth version of the layer, which has little damage to the original pattern of the second version of the layer. Moreover, the distribution of graphic lines in the fifth and sixth version layers is also relatively uniform, which is beneficial to reducing the damage to the pattern pattern of the second version layer by the subsequent photolithography process.

Correspondingly, in this embodiment, in the step of splitting the second version layer into the fifth version layer and the sixth version layer, in each second graphic row 200, the adjacent second graphics 210 are placed in the first In the layer of the fifth version, the remaining second graphics 210 are placed in the layer of the sixth version.

In this embodiment, splitting increases the spacing between the adjacent second pattern rows 200 along the second direction, which is conducive to improving the subsequent lithographic quality of the second pattern rows 200 adjacent along the second direction. At the same time, The split also has regularity, the second graphic 210 is alternately located in the fifth version layer and the sixth version layer, and the damage to the second pattern of the second graphic 210 is small, and the fifth version layer and the sixth version layer The distribution of the second pattern 210 is also relatively uniform, which is beneficial to reduce damage to the original pattern pattern of the initial layout layer in the subsequent photolithography process.

In this embodiment, the initial layout layers with regular graphics are regularly split. Compared with the random split scheme in the prior art, this embodiment avoids the large damage to the graphics regularity in the initial layout layers caused by random splitting. , using regular splitting, so that in the third, fourth, fifth, and sixth layers of the split, the distance between adjacent graphics is relatively large, and in each layer The graphics are still regularly arranged, so that the distribution of graphics in the third edition layer, the fourth edition layer, the fifth edition layer and the sixth edition layer is more uniform, which is conducive to improving the subsequent understanding of the third edition layer, the fourth edition layer The effects of optical proximity correction on the layer, the fifth layer, and the sixth layer are beneficial to improve the lithography quality of the graphics. Moreover, this embodiment can adapt to the regularity of the pattern arrangement of the initial layer Splitting, try to avoid too many splits due to random splitting, which is beneficial to obtain fewer splitting times, so that the initial layout layer can be split into a smaller number of layout layers, which in turn helps to save process costs.

In this embodiment, it further includes: separately performing optical proximity correction on the third version layer, the fourth version layer, the fifth version layer and the sixth version layer.

After performing optical proximity correction on the third layer, fourth layer, fifth layer, and sixth layer, the obtained graphics are used to make a mask, so that the photolithography process is performed using the mask. A corresponding mask pattern is formed on the wafer. Among them, according to the aforementioned records, it can be seen that the graphics in the third, fourth, fifth, and sixth editions of the obtained layers are relatively large, and the distribution is more uniform, which is conducive to improving the accuracy of the third edition. , 4th version layer, 5th version layer and 6th version layer for optical proximity correction.

Correspondingly, the present invention also provides an optical proximity correction system. FIG. 14 is a functional block diagram of an embodiment of the optical proximity correction system of the present invention.

In this embodiment, the optical proximity correction system 50 includes: a layout layer providing module 501, configured to provide an initial layout layer, the initial layout layer includes a plurality of graphic rows arranged along the first direction, and each graphic row includes A plurality of graphics arranged regularly, the first direction is perpendicular to the second direction; the first version layer splitting module 502 is used to split the initial version layer into the first version layer and the second version layer, and is used to divide the interval phase Adjacent graphic rows are placed in the first version of the layer, and the remaining graphic rows are placed in the second version of the layer; the second version of the layer splitting module 503 is used to split the first version of the layer into the third version of the layer and the fourth version of the layer The version layer is used to place adjacent graphics in the third version layer in each graphic row of the first version layer, and the remaining graphics are placed in the fourth version layer; the third version layer splitting module 504 uses For splitting the second version layer into the fifth version layer and the sixth version layer, it is used to place adjacent graphics in the fifth version layer in each graphic row of the second version layer, and place the remaining graphics in the fifth version layer Among the layers of the sixth version; among them, the layers of the third version, the fourth version, the fifth version and the sixth version are used to perform optical proximity correction separately.

The layout layer providing module 501 is used to provide an initial layout layer. The initial layout layer includes a plurality of graphic rows arranged along the first direction, and each graphic row includes a plurality of graphics regularly arranged along the second direction, and the first direction is vertical in the second direction.

The pattern of the initial layout layer is the target pattern transferred to the wafer. After optical proximity correction is performed on the pattern of the initial layout layer, the obtained pattern is used to make a mask, so that a photolithography process is performed using the mask to form a corresponding mask pattern on the wafer.

In this embodiment, the graphics in the initial layout layer are regularly arranged, so the initial layout layer is a layout layer with regularly arranged graphics, so that the regular split method is adopted for the initial layout layer, which is beneficial to reduce the impact on the initial layout layer. The destruction of the original pattern of the layout layer.

In this embodiment, the multiple graphic rows include multiple first graphic rows and second graphic rows alternately arranged along the first direction, and each first graphic row includes multiple first graphic rows arranged along the second direction , and the plurality of first patterns are arranged in a first pattern, each row of second patterns includes a plurality of second patterns arranged in a second direction, and the plurality of second patterns are arranged in a second pattern.

In this embodiment, a plurality of first graphic lines and second graphic lines are regularly arranged in the first direction, therefore, the initial layout layer has a higher graphic regularity, so that the subsequent use of regularity for the initial layout layer The splitting method reduces the damage to the original pattern of the initial layout layer, and has a more significant effect on transferring the first pattern and the second pattern to the wafer.

As an example, the first rule is: in each first graph row, a plurality of first graphs are not all on the same straight line; the second rule is: in each second graph row, a plurality of second graphs are located on the same straight line.

In this embodiment, in the first pattern row, a plurality of first patterns are alternately arranged up and down in the first direction, and the adjacent first patterns are located on the same straight line, then the first pattern in the first pattern row The graphics can be used to form target graphics alternately arranged up and down in the first direction on the wafer, and the adjacent target graphics are located on the same straight line. For example, when the target graphics are partition structures, the partition structures located in the same row are used It is used for cutting different metal wires, and at the same time, adjacent partition structures are used for cutting the same metal wires.

It should be noted that the adjacent first figures at intervals are located on the same straight line means that in the row of the first figures, for any first figure, the first figures located on both sides and adjacent to it are located on the same straight line superior.

In this embodiment, in the first direction, among the rows of multiple first graphics, adjacent first graphics are located on the same straight line along the first direction, so that the first graphics are not only regularly distributed in the second direction, but also in the second direction. The first direction is also regularly distributed, therefore, the regularity of the first graph is relatively high.

In this embodiment, the initial layout layer is a layout layer for forming an SRAM device, and both the first pattern and the second pattern are cut-off patterns of source and drain leads.

The SRAM device is a device with a highly regular structure, and the source-drain lead cutting pattern is used to form the source-drain lead isolation structure in the SRAM device.

Correspondingly, in the SRAM device, for the source-drain lead cutting pattern that cuts off the same source-drain lead, the source-drain lead cutting pattern is located on the same straight line, and for the source-drain lead cutting pattern that cuts two parallel source-drain leads, the source-drain lead cutting pattern is The cut-off graphs of the leads are alternately arranged up and down in the first direction, and the cut-off graphs of the adjacent source and drain wires are located on the same straight line. Therefore, in the SRAM device, the cut-off graphs of the source-drain wires have the first graph and the second graph. Arrangement rules. For the description of the SRAM device, reference may be made to the corresponding description in the foregoing embodiments, and details are not repeated here.

In this embodiment, the correction system further includes: a reference pattern layer providing module, configured to provide a reference pattern layer, located above or below the initial pattern layer, the reference pattern layer includes a plurality of rows of reference graphics arranged along the first direction, each The rows of reference patterns each include a plurality of reference patterns arranged along the second direction, and the plurality of reference patterns are all located on the same straight line, and the reference patterns are gate lead patterns.

In this embodiment, the reference graph is used as a reference condition for subsequent splitting of the first version of the layer.

The gate lead pattern is used to form the gate lead on the top of the gate structure, and is used to lead out the electrical properties of the gate structure. As can be seen from the foregoing, in the SRAM device, the gate structure extends along the first direction and extends along the second direction. Arranged in parallel, the gate lead patterns are arranged as reference patterns along the second direction to form rows of reference patterns, and the rows of reference patterns are arranged in parallel along the first direction.

In this embodiment, the gate lead is located at the top of the gate structure, the source-drain lead is located at the top of the source-drain doped layer, and the source-drain lead isolation structure is used to cut off the source-drain lead. The characteristics of the graph contact.

As an example, the reference pattern layer is overlapped with the initial pattern layer, and in the first pattern row, adjacent first patterns at intervals are in contact with the reference pattern.

The first layout layer splitting module 502 is used to split the initial layout layer into a first layout layer and a second layout layer, and is used to place adjacent graphics lines in the first layout layer, and place the remaining graphics lines in the first layout layer. in the second version of the layer.

In this embodiment, the splitting of the initial layout layer is regular, and the graphics lines are alternately placed in the first layout layer and the second layout layer, which has little damage to the original graphics pattern of the initial layout layer, and the first layout layer The distribution of graphic lines in the first layer and the second layer is also relatively uniform, which helps to reduce the damage to the original pattern of the initial layer by the subsequent photolithography process.

In this embodiment, the first graphics row is placed in the first layout layer, and the second graphics row is placed in the second layout layer.

In this embodiment, splitting increases the spacing between adjacent patterns along the first direction, which is beneficial to improving the subsequent lithography quality of adjacent patterns in the first direction. At the same time, the splitting has higher regularity. Putting the graphics that follow the same rule in the same layout layer will cause less damage to the original graphics rules of the initial layout layer, and the distribution of graphics in the first layout layer and the second layout layer will be more uniform, which is further conducive to Reduce the damage to the original pattern of the original pattern layer in the subsequent photolithography process.

The second version layer splitting module 503 is used to split the first version layer into a third version layer and a fourth version layer, and is used to place adjacent graphics in each graphic row of the first version layer at intervals In the third version layer, the remaining graphics are placed in the fourth version layer.

Due to the regularity of the splitting of the first version of the layer, the regularly arranged graphics are alternately placed in the third version of the layer and the fourth version of the layer, which has little damage to the original pattern of the first version of the layer, and the third version of the layer The distribution of pattern rows in the layer and the layer of the fourth version is also relatively uniform, which is beneficial to reducing the damage to the pattern of the layer of the first version in the subsequent photolithography process.

Correspondingly, in each row of the first graphics, the adjacent first graphics are placed in the third layout layer, and the remaining first graphics are placed in the fourth layout layer. Wherein, splitting increases the spacing between adjacent first pattern rows along the second direction, which is conducive to improving the subsequent lithography quality of the first pattern rows adjacent along the second direction, and meanwhile, the splitting is also regular property, the first graphics are alternately located in the third and fourth edition layers, which has less damage to the first pattern of the first graphics, and the distribution of the first graphics in the third and fourth edition layers is relatively uniform , so as to help reduce the damage to the original pattern of the initial layout layer in the subsequent photolithography process.

In this embodiment, the first graphics that are in contact with the reference graphic row are placed in the third layout layer, and the first graphics that are not in contact with the reference graphic row are placed in the fourth layout layer, or the first graphics that are in contact with the reference graphic row are placed in the fourth layout layer. The first graphic in contact is placed in the fourth version of the layer, and the first graphic that is not in contact with the reference graphic row is placed in the third version of the layer.

Because in this embodiment, in the first graphic row, the first graphic adjacent to the interval is in contact with the reference graphic, therefore, placing the first graphic in contact with the reference graphic row in the third version of the layer will not be in contact with the reference graphic. The first graphic in contact with the graphic row is placed in the fourth version layer, or the first graphic in contact with the reference graphic row is placed in the fourth version layer, and the first graphic that is not in contact with the reference graphic row is placed in the fourth version layer. In the three-version layer, that is to say, in each first graphic row, the adjacent first graphics are placed in the third version layer, and the remaining first graphics are placed in the fourth version layer, forming a regular pattern. split.

Moreover, in this embodiment, by using whether it is in contact with the reference graphic row as a reference condition, there is no need to additionally set the algorithm for selecting adjacent first graphics in the first graphic row, which simplifies the process of splitting the first layout layer. The splitting process saves the cost of the optical proximity correction process.

In this embodiment, in the first direction, the first figures located on the same straight line are divided into the first figure group and the second figure group alternately arranged, and the first figure group and the second figure group both include N first Graphics, where N is a positive integer, and N is less than or equal to the total number of rows of the first graphic; the first graphic group and the second graphic group are respectively placed in the third version layer and the fourth version layer.

In this embodiment, along the first direction, a plurality of first figures are also regularly arranged. Therefore, in this embodiment, the first figures on the same straight line are divided into first figure groups and second figure groups arranged alternately. , and place the first graphic group and the second graphic group in the third version layer and the fourth version layer respectively, then the first version layer is also regularly split in the first direction, so that the first version The damage to the original pattern of the layer is small, and the distribution of the graphics in the first and second layers is more uniform, which is conducive to reducing the damage to the original pattern of the initial layer in the subsequent photolithography process. .

The third version layer splitting module 504 is used to split the second version layer into the fifth version layer and the sixth version layer, and is used to place adjacent graphics in each graphic row of the second version layer at intervals In the layer of the fifth edition, the remaining graphics are placed in the layer of the sixth edition.

In this embodiment, the splitting of the second version of the layer has regularity, and the regularly arranged graphics are alternately placed in the fifth version of the layer and the sixth version of the layer, which has little damage to the original pattern of the second version of the layer. Moreover, the distribution of graphic lines in the fifth and sixth version layers is also relatively uniform, which is beneficial to reducing the damage to the pattern pattern of the second version layer by the subsequent photolithography process.

Correspondingly, in this embodiment, in each row of second graphics, adjacent second graphics are placed in the fifth layout layer, and the remaining second graphics are placed in the sixth layout layer.

In this embodiment, splitting increases the spacing between adjacent rows of second patterns along the second direction, which is beneficial to improving the subsequent lithographic quality of rows of second patterns adjacent along the second direction. At the same time, splitting It also has regularity, the second graphics are alternately located in the fifth version layer and the sixth version layer, the damage to the second pattern of the second graphic is small, and the distribution of the second graphic in the fifth version layer and the sixth version layer It is also relatively uniform, which is conducive to reducing the damage to the original pattern of the initial layout layer in the subsequent photolithography process.

In this embodiment, the initial layout layers with regular graphics are regularly split. Compared with the random split scheme in the prior art, this embodiment avoids the large damage to the graphics regularity in the initial layout layers caused by random splitting. , using regular splitting, so that in the third, fourth, fifth, and sixth layers of the split, the distance between adjacent graphics is relatively large, and in each layer The graphics are still regularly arranged, so that the distribution of graphics in the third edition layer, the fourth edition layer, the fifth edition layer and the sixth edition layer is more uniform, which is conducive to improving the subsequent understanding of the third edition layer, the fourth edition layer The effects of optical proximity correction on the layer, the fifth layer, and the sixth layer are beneficial to improve the lithography quality of the graphics. Moreover, this embodiment can adapt to the regularity of the pattern arrangement of the initial layer Splitting, try to avoid too many splits due to random splitting, which is beneficial to obtain fewer splitting times, so that the initial layout layer can be split into a smaller number of layout layers, which in turn helps to save process costs.

In this embodiment, the correction system further includes: an optical proximity correction module, configured to individually perform optical proximity correction on the third layer, the fourth layer, the fifth layer, and the sixth layer.

Correspondingly, the present invention also provides a mask, including: a pattern obtained by using the optical proximity correction method provided by the embodiment of the present invention.

As can be seen from the aforementioned embodiments, the initial layout layers regularly arranged in graphics are regularly split to avoid large damage to the graphics rules in the initial layout layers caused by random splitting, and the regular split is used to make the split In the layers of the third edition, the fourth edition, the fifth edition and the sixth edition, while the distance between adjacent graphics is relatively large, the graphics in each layout layer are still arranged regularly, so that The graphics in the third, fourth, fifth, and sixth editions are more evenly distributed, which is conducive to improving the subsequent understanding of the third, fourth, fifth, and sixth editions The effect of performing optical proximity correction on the layer, which is beneficial to improve the lithography quality of the graphics, and the embodiment of the present invention can avoid the random splitting as much as possible by adopting regular splits adapted to the pattern arrangement rules of the initial layout layers. If the number of splits is too large, it is beneficial to obtain fewer splits, so that the initial layout layer can be split into a smaller number of layout layers, which is beneficial to saving process costs.

An embodiment of the present invention also provides a device that can implement the optical proximity correction method provided in the embodiment of the present invention by loading the above optical proximity correction method in the form of a program. An optional hardware structure of a terminal device provided in an embodiment of the present invention may be shown in FIG. 15 , including: at least one processor 01 , at least one communication interface 02 , at least one memory 03 and at least one communication bus 04 .

In this embodiment, there is at least one processor 01 , communication interface 02 , memory 03 , and communication bus 04 , and the processor 01 , communication interface 02 , and memory 03 communicate with each other through the communication bus 04 . The communication interface 02 may be an interface of a communication module for performing network communication, such as an interface of a GSM module. The processor 01 may be a central processing unit CPU, or an Application Specific Integrated Circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present invention. The memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (non-volatile memory, NVM), such as at least one disk memory. Wherein, the memory 03 stores one or more computer instructions, and the one or more computer instructions are executed by the processor 01 to implement the optical proximity correction method provided by the embodiment of the present invention.

It should be noted that the above-mentioned realization terminal equipment may also include other devices (not shown) that may not be necessary for the disclosure of the embodiments of the present invention; in view of the fact that these other devices may not be necessary for understanding the disclosure of the embodiments of the present invention, This embodiment of the present invention does not introduce them one by one.

An embodiment of the present invention also provides a storage medium, the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction method provided by the embodiment of the present invention.

In the optical proximity correction method provided by the embodiment of the present invention, the initial layout layers regularly arranged with graphics are regularly split, so as to avoid the large damage to the graphics regularity in the initial layout layers caused by random splitting, and use the regular split In the split third, fourth, fifth, and sixth layers, the distance between adjacent graphics is relatively large, and the graphics in each layer are still regular Arrangement, so that the graphic distribution in the third edition layer, the fourth edition layer, the fifth edition layer and the sixth edition layer is more uniform, which is conducive to improving the subsequent understanding of the third edition layer, the fourth edition layer, and the fifth edition layer layer and the sixth version of the layer for optical proximity correction, which is conducive to improving the lithographic quality of the graphics, and the embodiment of the present invention can avoid as far as possible In the case of too many split times due to random split, it is beneficial to obtain fewer split times, thereby splitting the initial layout layer into a smaller number of layout layers, which is beneficial to saving process costs.

The embodiments of the present invention described above are combinations of elements and features of the present invention. The elements or features may be considered optional unless mentioned otherwise. Each element or feature may be practiced without being combined with other elements or features. In addition, the embodiments of the present invention may be configured by combining some elements and/or features. The order of operations described in the embodiments of the present invention may be rearranged. Some constructions of any one embodiment may be included in another embodiment, and may be replaced with corresponding constructions of another embodiment. It is obvious to those skilled in the art that claims that have no explicit citation relationship with each other among the appended claims may be combined in the embodiments of the present invention or may be included as new claims in amendments after filing the present application.

Embodiments of the present invention can be realized by various means such as hardware, firmware, software, or a combination thereof. In the hardware configuration mode, the method according to the exemplary embodiment of the present invention can be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices ( PLD), field programmable gate array (FPGA), processor, controller, microcontroller, microprocessor, etc. to achieve. In a firmware or software configuration, the embodiments of the present invention can be implemented in the form of modules, procedures, functions, and the like. The software codes may be stored in memory units and executed by processors. The memory unit is located inside or outside the processor, and can transmit data to and receive data from the processor via various known means.

The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Although the present invention is disclosed above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention should be based on the scope defined in the claims.

Claims (13)

1. An optical proximity correction method, characterized in that, comprising: An initial layout layer is provided, the initial layout layer includes a plurality of graphic rows arranged along a first direction, each of the graphic rows includes a plurality of graphics regularly arranged along a second direction, and the first direction is perpendicular to second direction; Splitting the initial layout layer into a first layout layer and a second layout layer, for placing adjacent graphics rows in the first layout layer, and placing the remaining graphics rows in the second layout layer middle; Splitting the first version of the layer into a third version of the layer and a fourth version of the layer, for placing the graphics adjacent to each other in the first version of the layer in the third version of the layer , and the rest of the graphics are placed in the fourth version of the layer; The second version of the layer is split into a fifth version of the layer and a sixth version of the layer, for each of the second version of the graphic row, the graphics adjacent to each other are placed in the fifth version of the layer , and the rest of the graphics are placed in the sixth version of the layer; Wherein, the third version of the layer, the fourth version of the layer, the fifth version of the layer and the sixth version of the layer are used to perform optical proximity correction independently. 2. The optical proximity correction method according to claim 1, characterized in that, in the step of providing the initial layout layer, a plurality of the graphic lines includes alternately arranging the first graphic lines and the second graphic lines along the first direction Rows, each of the first graphic rows includes a plurality of first graphics arranged along the second direction, and the plurality of first graphics are arranged in a first law, each of the second graphic rows includes A plurality of second figures arranged along a second direction, and the plurality of second figures are arranged in a second regularity; In the step of splitting the initial layout layer into a first layout layer and a second layout layer, placing the first graphics row in the first layout layer, and placing the second graphics row in the second layout layer middle. 3. The optical proximity correction method according to claim 2, characterized in that, in the step of providing the initial layout layer, the first rule is: in each of the first graphic lines, a plurality of the Not all the first figures are located on the same straight line; the second rule is: in each row of the second figures, multiple second figures are located on the same straight line. 4. The optical proximity correction method according to claim 3, wherein in the step of providing the initial layout layer, in the first graphic row, a plurality of the first graphics are on the first side Arranged alternately upwards and downwards, and the adjacent first figures are located on the same straight line. 5. The optical proximity correction method according to claim 4, characterized in that, in the step of providing the initial layout layer, among the plurality of first graphic rows, along the first direction, the adjacent A figure is located on the same straight line; The step of splitting the first version of the layer into the third version of the layer and the fourth version of the layer includes: in the first direction, the first graphics located on the same straight line are divided into alternately arranged first graphic groups and second graphic groups. Graphics group, the first graphics group and the second graphics group all include N first graphics, where N is a positive integer, and N is less than or equal to the total number of rows of the first graphics; the first graphics The group and the second graphic group are respectively placed in the layer of the third version and the layer of the fourth version. 6. The optical proximity correction method according to claim 4, wherein in the step of providing the initial layout layer, the initial layout layer is a layout layer for forming an SRAM device, and the first graphic and the first layout layer The two figures are both source and drain leads cut off figures. 7. The optical proximity correction method according to claim 6, wherein after providing the initial layout layer, before splitting the initial layout layer into the first layout layer and the second layout layer, further comprising: providing a reference layout layer layer, the reference plate layer includes a plurality of reference pattern rows arranged along the first direction, each of the reference pattern rows includes a plurality of reference patterns arranged along the second direction, and the plurality of reference patterns are all Located on the same straight line, the reference pattern is a gate lead pattern; Overlapping the reference pattern layer with the initial pattern layer, and in the first pattern row, the adjacent first patterns are in contact with the reference pattern; In the step of splitting the first version of the layer into a third version of the layer and a fourth version of the layer, the first graphics that are in contact with the reference graphic row are placed in the third version of the layer, and the The first graphic in contact with the reference graphic row is placed in the fourth layout layer, or the first graphic in contact with the reference graphic row is placed in the fourth layout layer, and the first graphic that is not in contact with the reference graphic row is placed in the fourth layout layer. The first graphic that the graphic row touches is placed in the layer of the third version. 8. An optical proximity correction system, comprising: A layout layer providing module, configured to provide an initial layout layer, the initial layout layer includes a plurality of graphics rows arranged along the first direction, each of the graphics rows includes a plurality of graphics regularly arranged along the second direction, so said first direction is perpendicular to the second direction; The first version layer splitting module is used to split the initial version layer into the first version layer and the second version layer, and is used to place the graphic lines adjacent to each other in the first version layer, and place the remaining The graphic row is placed in the second version of the layer; The second version of the layer splitting module is used to split the first version of the layer into a third version of the layer and a fourth version of the layer, and is used to divide each of the graphic rows of the first version of the layer into adjacent ones The graphics are placed in the layer of the third version, and the remaining graphics are placed in the layer of the fourth version; The third version of the layer splitting module is used to split the second version of the layer into the fifth version of the layer and the sixth version of the layer, and is used to divide each of the graphic rows of the second version of the layer into adjacent ones The graphics are placed in the layer of the fifth edition, and the rest of the graphics are placed in the layer of the sixth edition; Wherein, the third version of the layer, the fourth version of the layer, the fifth version of the layer and the sixth version of the layer are used to perform optical proximity correction independently. 9. The optical proximity correction system according to claim 8, wherein, in the layout layer providing module, a plurality of first graphic lines and second graphic lines are arranged alternately along the first direction to provide the initial layout layer In the step, a plurality of said graphic rows include alternately arranging first graphic rows and second graphic rows along a first direction, and each of said first graphic rows includes a plurality of first graphic rows arranged along a second direction , and a plurality of the first graphics are arranged in a first pattern, each row of the second graphics includes a plurality of second graphics arranged in a second direction, and a plurality of the second graphics are arranged in a second regular arrangement; The first layout layer splitting module is used to place the first graphics row in the first layout layer, and place the second graphics row in the second layout layer. 10. The optical proximity correction system according to claim 8, characterized in that, in the layout layer providing module, the first rule is: in each of the first graphic rows, a plurality of the first The figures are not all located on the same straight line; the second rule is: in each row of the second figures, multiple second figures are located on the same line. 11. A mask, characterized by comprising: a figure obtained by using the optical proximity correction method according to any one of claims 1-7. 12. A device comprising at least one memory and at least one processor, the memory storing one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement The optical proximity correction method according to any one of claims 1-7. 13. A storage medium, characterized in that the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the optical proximity correction according to any one of claims 1-7 method.

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