CN116153812A - Wet etching device and wet etching control method - Google Patents

Abstract

The disclosure provides a wet etching device and a wet etching control method, which belong to the technical field of optoelectronic manufacturing. The wet etching device includes: an etching tank, a hydrogen ion concentration detector, a first pipeline, a first electronically controlled valve and a controller; the hydrogen ion concentration detector is located in the etching tank, and the first One end of the pipeline communicates with the etching tank, the first electric control valve is connected to the first pipeline, and the first pipeline is used to transport acid liquid into the etching tank; the controllers respectively Electrically connected with the hydrogen ion concentration detector and the first electronically controlled valve, the controller is configured to control the hydrogen ion concentration detected by the hydrogen ion concentration detector below a preset threshold The first electric control valve is turned on. The disclosure can keep the corrosion rate consistent during the wet etching process, and improve the stability of the luminous flux parameter of the light emitting diode.

Description

Wet etching device and wet etching control method

technical field

The present disclosure relates to the technical field of optoelectronic manufacturing, and in particular to a wet etching device and a wet etching control method.

Background technique

Light Emitting Diode (English: Light Emitting Diode, referred to as: LED), as a very influential new product in the optoelectronics industry, has the characteristics of small size, long service life, colorful colors, and low energy consumption. It is widely used in lighting, display screens, etc. , signal lights, backlight, toys and other fields. The core structure of the LED is the epitaxial wafer, and the production of the epitaxial wafer has a great influence on the photoelectric characteristics of the LED.

In the related art, a light emitting diode usually includes a substrate and an epitaxial layer stacked in sequence. In order to improve the current spreading effect, a tin-doped indium oxide (Indium Tin Oxide, ITO) film is usually formed on the surface of the epitaxial layer. When preparing an ITO film, a layer of ITO film is usually evaporated first, and then wet etching is used to obtain an ITO film of the required specification.

However, the hydrogen ions in the acid solution used for etching will be gradually consumed during the etching process, so the concentration of hydrogen ions in the acid solution will gradually decrease during the etching process, so that the corrosion rate of wet etching will gradually decrease. Reduce, and then affect the etching line width of wet etching. This will affect the area of the etched ITO film remaining on the epitaxial layer, and the different areas of the ITO film will affect the luminous flux parameters of the light emitting diode. Therefore, the stability of the luminous flux parameters of the light emitting diode after wet etching is poor.

Contents of the invention

Embodiments of the present disclosure provide a wet etching device and a wet etching control method, which can keep the corrosion rate consistent during the wet etching process and improve the stability of the luminous flux parameter of the light emitting diode. Described technical scheme is as follows:

An embodiment of the present disclosure provides a wet etching device, which includes: an etching tank, a hydrogen ion concentration detector, a first pipeline, a first electronically controlled valve, and a controller; the hydrogen ion The concentration detector is located in the etching tank, one end of the first pipeline communicates with the etching tank, the first electric control valve is connected to the first pipeline, and the first pipeline is used to The acid solution is transported in the etching tank; the controller is electrically connected with the hydrogen ion concentration detector and the first electronically controlled valve respectively, and the controller is configured to be connected to the hydrogen ion concentration detector When the detected hydrogen ion concentration is lower than a preset threshold, the first electronically controlled valve is controlled to be turned on.

In another implementation manner of the embodiments of the present disclosure, the controller is further configured to determine the preset threshold based on the corresponding relationship between the etching line width and the hydrogen ion concentration, and the target etching line width of the light emitting diode.

In another implementation manner of the embodiment of the present disclosure, the controller is further configured to determine the acid solution to be injected based on the corresponding relationship between the etching duration and the hydrogen ion concentration of the acid solution, and the etching duration of the acid solution to be injected. The current hydrogen ion concentration, the etching time is the use time before the acid solution is injected into the etching tank; the amount of acid solution replenishment is determined based on the current hydrogen ion concentration and the preset threshold.

In another implementation manner of the embodiment of the present disclosure, the wet etching device further includes an infrared film thickness detector, the infrared film thickness detector is electrically connected to the controller, and the infrared film thickness detector The instrument is used to detect the thickness of the ITO film before and after the etching of the light emitting diode, and the controller is also used to determine the etching rate of the ITO film based on the thickness of the ITO film before and after the etching.

An embodiment of the present disclosure provides a wet etching control method, the wet etching device further includes a second pipeline and a second electronic control valve, one end of the second pipeline communicates with the etching groove, The second electronically controlled valve is connected to the second pipeline, and the second pipeline is used to transport acid liquid into the etching tank.

In another implementation manner of the embodiment of the present disclosure, the wet etching device further includes a third pipeline, a heater, a circulation pump, and a collection tank, one end of the third pipeline communicates with the etching tank, The other end of the third pipeline communicates with the collection tank, the collection tank communicates with the etching tank, and the heater and the circulation pump are connected to the third pipeline.

In another implementation manner of the embodiment of the present disclosure, the wet etching device further includes a fourth pipeline and a drain valve, one end of the fourth pipeline communicates with the etching tank, and the drain valve connected to the fourth pipeline.

An embodiment of the present disclosure provides a control method for wet etching, the control method is implemented by the wet etching device as described above, including: obtaining the concentration of hydrogen ions in the etching tank; When the concentration is lower than the preset threshold, the first electric control valve is controlled to conduct.

In another implementation manner of the embodiment of the present disclosure, before obtaining the concentration of hydrogen ions in the etching groove, the control method further includes: obtaining the target etching line width of the light-emitting diode; The corresponding relationship of ion concentration determines the preset threshold.

In another implementation manner of the embodiment of the present disclosure, after determining the preset threshold based on the corresponding relationship between the etching line width and the concentration of hydrogen ions, the control method further includes: obtaining the etching value of the acid solution to be injected Etching time length; Based on the corresponding relationship between the etching time length and the hydrogen ion concentration of the acid solution, determine the current hydrogen ion concentration to be injected into the acid solution, and the etching time length is the service time before the acid solution is injected into the etching tank; based on the current The concentration of hydrogen ions and the preset threshold value determine the supplementary amount of acid solution, control the conduction of the first electronically controlled valve, and deliver the acid solution of the supplementary amount of acid solution to the etching tank, so that the acid solution in the etching tank The hydrogen ion concentration of the acid liquid reaches the preset threshold.

The beneficial effects brought by the technical solutions provided by the embodiments of the present disclosure at least include:

The wet etching device provided by the embodiment of the present disclosure includes an etching tank, a hydrogen ion concentration detector, a first pipeline, a first electronically controlled valve, and a controller; wherein the hydrogen ion concentration detector is set in the etching tank, and To detect the concentration of hydrogen ions in the etching tank, the first pipeline is used to transport acid solution to the etching tank, and the first pipeline is controlled by the first electronically controlled valve to realize the purpose of controlling whether to deliver acid solution to the etching tank . The controller can obtain the hydrogen ion concentration detected by the hydrogen ion concentration detector, and when the hydrogen ion concentration is lower than the preset threshold value of the acid solution, control the conduction of the first electronically controlled valve to replenish hydrogen ions into the etching tank, so that The hydrogen ion concentration is not lower than the preset threshold. In this way, the concentration of hydrogen ions in the etching tank is monitored, and the acid solution is automatically replenished when the concentration of hydrogen ions decreases, so as to restore the concentration of hydrogen ions in the etching tank, so that the concentration of hydrogen ions in the acid solution in the etching tank can always be kept consistent. , so as to avoid the problem of different corrosion rates in the wet etching process, make the etching line width of wet etching meet the set requirements, obtain the ITO film with the designed area, and ensure the luminous flux parameters of the light-emitting diode after wet etching stability.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present disclosure. For those skilled in the art, other drawings can also be obtained based on these drawings without creative effort.

FIG. 1 is a schematic structural diagram of a wet etching device provided by an embodiment of the present disclosure;

FIG. 2 is a schematic diagram of a corresponding relationship between etching line width and hydrogen ion concentration provided by an embodiment of the present disclosure;

3 is a schematic diagram of a corresponding relationship between etching duration and hydrogen ion concentration provided by an embodiment of the present disclosure;

FIG. 4 is a flowchart of a wet etching control method provided by an embodiment of the present disclosure;

5 is a schematic diagram of a control device for wet etching provided by an embodiment of the present disclosure;

Fig. 6 is a structural block diagram of a computer device provided by an embodiment of the present disclosure.

The symbols in the figure are explained as follows:

10. Etching groove;

21. Hydrogen ion concentration detector; 22. Heater; 23. Circulation pump; 24. Collection tank; 25. Drain valve;

31, the first pipeline; 32, the second pipeline; 33, the third pipeline; 34, the fourth pipeline;

41. The first electric control valve; 42. The second electric control valve;

50. Controller;

60. Infrared film thickness detector.

Detailed ways

In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.

Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprising" and similar terms mean that the elements or items listed before "comprising" or "comprising" include the elements or items listed after "comprising" or "comprising" and their equivalents, and do not exclude other component or object. Words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", "Top", "Bottom" and so on are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also be Change accordingly.

In the related art, the acid solution for wet etching ITO includes HCL, FeCl ₃ and H ₂ O. Wherein, the volume percentage of HCL is 16.5% to 17.5%, the volume percentage of FeCl ₃ is 22% to 23%, and the balance is water.

The reaction equation of the etching process is: 6HCL+In ₂ O ₃ =2InCL ₃ +3H ₂ O; 4HCL+SnO ₂ =SnCL ₄ +2H ₂ O.

During the etching process, HCL in the acid solution will be consumed, thereby affecting the pH value of the acid solution, so that FeCL ₃ will be hydrolyzed [FeCL ₃ +3H ₂ O=Fe(OH) ₃ +3HCL]. Therefore, HCL is the main reaction solution in the acid solution, and FeCl ₃ plays the role of buffer.

Since the HCL concentration of the acid solution will gradually decrease during the etching process, the corrosion rate of the acid solution will also gradually decrease, thereby affecting the etching line width of the wet etching. This will affect the area of the etched ITO film remaining on the epitaxial layer, and different areas of the ITO film will affect the luminous flux parameters of the light emitting diode. Therefore, the stability of the luminous flux parameters of the light emitting diode after wet etching is poor.

FIG. 1 is a schematic structural diagram of a wet etching device provided by an embodiment of the present disclosure. As shown in FIG. 1 , the wet etching device includes: an etching tank 10 , a hydrogen ion concentration detector 21 , a first pipeline 31 , a first electronically controlled valve 41 and a controller 50 .

As shown in Figure 1, the hydrogen ion concentration detector 21 is located in the etching tank 10, and one end of the first pipeline 31 communicates with the etching tank 10, and the first electric control valve 41 is connected on the first pipeline 31, and is used for controlling On-off of the first pipeline 31 , the first pipeline 31 is used to transport the acid solution into the etching tank 10 .

Wherein, the controller 50 is electrically connected to the hydrogen ion concentration detector 21 and the first electronic control valve 41 respectively, and the controller 50 is configured to be lower than the preset threshold value when the hydrogen ion concentration detected by the hydrogen ion concentration detector 21 , to control the conduction of the first electronically controlled valve 41 . That is, if the concentration of hydrogen ions is lower than the preset threshold, the first electric control valve 41 is controlled to be turned on, and the acid solution is replenished into the etching tank, so that the concentration of hydrogen ions returns to the preset threshold.

The wet etching device provided by the embodiment of the present disclosure includes an etching tank, a hydrogen ion concentration detector, a first pipeline, a first electronically controlled valve, and a controller; wherein the hydrogen ion concentration detector is set in the etching tank, and To detect the concentration of hydrogen ions in the etching tank, the first pipeline is used to transport acid solution to the etching tank, and the first pipeline is controlled by the first electronically controlled valve to realize the purpose of controlling whether to deliver acid solution to the etching tank . The controller can obtain the hydrogen ion concentration detected by the hydrogen ion concentration detector, and when the hydrogen ion concentration is lower than the preset threshold value of the acid solution, control the conduction of the first electronically controlled valve to replenish hydrogen ions into the etching tank, so that The hydrogen ion concentration is not lower than the preset threshold. In this way, the concentration of hydrogen ions in the etching tank is monitored, and the acid solution is automatically replenished when the concentration of hydrogen ions decreases, so as to restore the concentration of hydrogen ions in the etching tank, so that the concentration of hydrogen ions in the acid solution in the etching tank can always be kept consistent. , so as to avoid the problem of different corrosion rates in the wet etching process, make the etching line width of wet etching meet the set requirements, obtain the ITO film with the designed area, and ensure the luminous flux parameters of the light-emitting diode after wet etching stability.

Optionally, the controller 50 is further configured to determine a preset threshold based on the corresponding relationship between the etching line width and the hydrogen ion concentration, and the target etching line width of the light emitting diode.

In the embodiments of the present disclosure, the etching line width refers to the dimension in the direction parallel to the substrate of the light emitting diode.

FIG. 2 is a schematic diagram of a corresponding relationship between an etching line width and a hydrogen ion concentration provided by an embodiment of the present disclosure. As shown in FIG. 2, the etching line width is positively correlated with the hydrogen ion concentration, and the greater the hydrogen ion concentration is, the larger the etching line width is.

In the embodiments of the present disclosure, the corresponding relationship between the etching line width and the hydrogen ion concentration can be obtained through data analysis obtained through a large number of experiments.

For example, the test is carried out by gradually increasing the concentration of hydrogen ions, and after the test is completed, the etching line width of the ITO film is detected to obtain a set of data on the concentration of hydrogen ions and the etching line width. Then, the average value is obtained through multiple sets of experiments to obtain the corresponding relationship between the etching line width and the hydrogen ion concentration.

Wherein, the target etching line width may be the etching line width input by the technician, and the target etching line width is the line width required by the light emitting diode design.

In this way, when the ITO film corresponding to the line width needs to be etched, the technician inputs the target etching line width to the controller 50, and the controller 50 can obtain the corresponding target hydrogen ion concentration according to the corresponding relationship between the etching line width and the hydrogen ion concentration , the target hydrogen ion concentration is the preset threshold. In this way, before wet etching, an acid solution with a hydrogen ion concentration of a preset threshold is directly injected into the etching tank 10, so that the etching line width of wet etching can meet the set requirements, and an ITO film with a design area can be obtained, ensuring Stability of luminous flux parameters of LEDs after wet etching.

Optionally, the controller 50 is further configured to determine the current hydrogen ion concentration of the acid solution to be injected based on the correspondence between the etching duration and the hydrogen ion concentration of the acid solution, and the etching duration of the acid solution to be injected.

The supplementary amount of acid liquid is determined based on the hydrogen ion concentration detected by the hydrogen ion concentration detector 21, the current hydrogen ion concentration and a preset threshold.

In the embodiment of the present disclosure, the etching time is the use time before the acid solution is injected into the etching tank 10 , that is, the time that the acid solution has been involved in etching before the acid solution is injected.

FIG. 3 is a schematic diagram of a corresponding relationship between etching duration and hydrogen ion concentration provided by an embodiment of the present disclosure. As shown in FIG. 3 , the etching time is negatively correlated with the hydrogen ion concentration, and the longer the etching time is, the smaller the hydrogen ion concentration is. That is, the longer the acid solution is used, the less hydrogen ions remain in the acid solution.

In the embodiments of the present disclosure, the corresponding relationship between the etching duration and the concentration of hydrogen ions can be obtained through data analysis obtained from a large number of experiments.

For example, the test experiment is carried out by gradually increasing the etching time, and the hydrogen ion concentration in the acid solution is detected after the test to obtain a set of hydrogen ion concentration and etching time data. Then, the average value is obtained through multiple sets of experiments to obtain the corresponding relationship between the etching time and the concentration of hydrogen ions.

Wherein, the etching duration to be injected with the acid solution may be the etching duration input by the technician.

As shown in Figure 3, the acid solution to be injected has participated in the etching for 2 hours, so the etching time is 2 hours. According to the corresponding relationship between the etching time length and the hydrogen ion concentration, the hydrogen ion concentration of the acid solution at this time can be obtained From 10% to 9.8%.

In this way, after the current hydrogen ion concentration of the acid liquid is determined, the replenishment amount of the acid liquid is calculated and determined according to the difference between the preset threshold value and the current hydrogen ion concentration. In order to ensure that after injecting a supplementary amount of acid solution into the etching tank 10, the concentration of hydrogen ions in the etching tank 10 can reach a preset threshold, so that the etching line width of wet etching can meet the set requirements, The ITO film with the designed area is obtained to ensure the stability of the luminous flux parameters of the light emitting diode after wet etching.

In some other implementation manners, the supplementary amount of acid liquid may also be calculated and determined according to the difference between the preset threshold and the hydrogen ion concentration detected by the hydrogen ion concentration detector 21 .

Optionally, as shown in FIG. 1, the wet etching device further includes an infrared film thickness detector 60, the infrared film thickness detector 60 is electrically connected to the controller 50, and the infrared film thickness detector 60 is used to detect The thickness of the ITO film before and after etching, and the controller 50 is also used to determine the etching rate of the ITO film based on the thickness of the ITO film before and after etching.

By setting the infrared film thickness detector 60, it can detect whether the ITO film thickness of the light-emitting diode obtained after wet etching meets the design thickness, so that technicians can quickly determine whether the ITO film after wet etching is qualified. At the same time, the total time of wet etching can be counted to calculate and determine the etching rate of the ITO film, which is convenient for technicians to obtain various parameters of wet etching.

Optionally, as shown in FIG. 1 , the wet etching device further includes a second pipeline 32 and a second electric control valve 42, one end of the second pipeline 32 communicates with the etching tank 10, and the second electric control valve 42 is connected to On the second pipeline 32 , the second pipeline 32 is used to transport the acid solution into the etching tank 10 . The second pipeline 32 is used to deliver the acid solution to the etching tank 10 , and the second pipeline 32 is controlled on and off by the second electronically controlled valve 42 to realize the purpose of controlling whether to deliver the acid solution to the etching tank 10 .

Optionally, as shown in Figure 1, the wet etching device also includes a third pipeline 33, a heater 22, a circulation pump 23 and a collection tank 24, one end of the third pipeline 33 communicates with the etching tank 10, and the third pipeline The other end of 33 communicates with collecting tank 24 , collecting tank 24 communicates with etching tank 10 , heater 22 and circulation pump 23 are connected on the third pipeline 33 .

The heater 22 is set to be used for heating the acid solution in the etching tank 10, so that the acid solution meets the process temperature requirements of etching. After the heater 22 heats the acid solution, it is pumped to the collection tank 24 through the circulation pump 23, and the acid solution After the liquid enters the collection tank 24, it is injected back into the etching tank 10 through an electronically controlled valve, so as to realize the recycling of the acid liquid.

Optionally, as shown in Figure 1, the wet etching device further includes a fourth pipeline 34 and a drain valve 25, one end of the fourth pipeline 34 communicates with the etching tank 10, and the drain valve 25 is connected to the fourth pipeline 34 above, used to control the on-off of the fourth pipeline 34 . The waste liquid in the etching tank 10 is conveniently drained by setting the drain valve 25 .

The wet etching device provided by the embodiments of the present disclosure reduces the single-chip consumption of acid solution from the existing 20ml to 5ml, realizes the reduction of the cost of the single-chip acid solution and the guarantee of the etching effect, and then stabilizes the luminous flux parameters of the product. Control and monitor the etching effect and appearance of the product by matching with automatic monitoring concentration and film thickness instruments to ensure the consistency of the solution ratio in the early, middle and final stages of the acid solution and the consistency of the etching line width of the ITO film of the product, thus ensuring The stability of the luminous flux parameters of the product improves the matching rate of the product. At the same time, it can also achieve a substantial reduction in the single-chip material cost of this process, with a reduction rate of up to 75%.

FIG. 4 is a flowchart of a method for controlling wet etching provided by an embodiment of the present disclosure. As shown in Figure 4, the control method is implemented by the wet etching device as described above, including:

Step 101: Obtain the concentration of hydrogen ions in the etching tank.

Step 102: When the concentration of hydrogen ions is lower than a preset threshold, control the conduction of the first electronically controlled valve.

In the wet etching method provided by the embodiments of the present disclosure, the concentration of hydrogen ions detected by the hydrogen ion concentration detector is obtained first, and when the concentration of hydrogen ions is lower than the preset threshold value, the first electronic control valve is controlled to be turned on so that the hydrogen ions The concentration can be restored to the preset threshold. In this way, the concentration of hydrogen ions in the etching tank is monitored, and the acid solution is automatically replenished when the concentration of hydrogen ions decreases, so as to restore the concentration of hydrogen ions in the etching tank, so that the concentration of hydrogen ions in the acid solution in the etching tank can always be kept consistent. , so as to avoid the problem of different corrosion rates in the wet etching process, make the etching line width of wet etching meet the set requirements, obtain the ITO film with the designed area, and ensure the luminous flux parameters of the light-emitting diode after wet etching stability.

Before step 101, the control method also includes the following two steps:

The first step is to obtain the target etching line width of the LED.

In the second step, the preset threshold is determined based on the corresponding relationship between the etching line width and the hydrogen ion concentration.

As shown in FIG. 2, the etching line width is positively correlated with the hydrogen ion concentration, and the greater the hydrogen ion concentration is, the larger the etching line width is.

In the embodiments of the present disclosure, the corresponding relationship between the etching line width and the hydrogen ion concentration can be obtained through data analysis obtained through a large number of experiments.

For example, the test is carried out by gradually increasing the concentration of hydrogen ions, and after the test is completed, the etching line width of the ITO film is detected to obtain a set of data on the concentration of hydrogen ions and the etching line width. Then, the average value is obtained through multiple sets of experiments to obtain the corresponding relationship between the etching line width and the hydrogen ion concentration.

Wherein, the target etching line width may be the etching line width input by the technician, and the target etching line width is the line width required by the light emitting diode design.

In this way, when it is necessary to etch the ITO film corresponding to the line width, the technician inputs the target etching line width to the controller, and the controller can obtain the corresponding target hydrogen ion concentration according to the corresponding relationship between the etching line width and the hydrogen ion concentration. The target hydrogen ion concentration is the preset threshold. In this way, before wet etching, an acid solution with a hydrogen ion concentration of a preset threshold is directly injected into the etching tank, so that the etching line width of wet etching can meet the set requirements, and an ITO film with a designed area can be obtained to ensure that the wet The stability of the luminous flux parameters of the light-emitting diode after etching.

The third step is to obtain the etching time to be injected with the acid solution.

In the embodiment of the present disclosure, the etching time is the use time before the acid solution is injected into the etching tank, that is, the time that the acid solution has been involved in etching before the acid solution is injected.

The fourth step is to determine the current hydrogen ion concentration of the acid solution to be injected based on the corresponding relationship between the etching duration and the hydrogen ion concentration of the acid solution, and the etching duration is the use time before the acid solution is injected into the etching tank.

As shown in FIG. 3 , the etching time is negatively correlated with the hydrogen ion concentration, and the longer the etching time is, the smaller the hydrogen ion concentration is. That is, the longer the acid solution is used, the less hydrogen ions remain in the acid solution.

The fifth step is to determine the supplementary amount of acid solution based on the current hydrogen ion concentration and the preset threshold value, control the conduction of the first electronically controlled valve, and deliver the supplementary amount of acid solution to the etching tank, so that the acid solution in the etching tank The concentration of hydrogen ions reaches a preset threshold.

In the embodiments of the present disclosure, the corresponding relationship between the etching duration and the concentration of hydrogen ions can be obtained through data analysis obtained from a large number of experiments.

For example, the test experiment is carried out by gradually increasing the etching time, and the hydrogen ion concentration in the acid solution is detected after the test to obtain a set of hydrogen ion concentration and etching time data. Then, the average value is obtained through multiple sets of experiments to obtain the corresponding relationship between the etching time and the concentration of hydrogen ions.

Wherein, the etching duration to be injected with the acid solution may be the etching duration input by the technician.

As shown in Figure 3, the acid solution to be injected has participated in the etching for 2 hours, so the etching time is 2 hours. According to the corresponding relationship between the etching time length and the hydrogen ion concentration, the hydrogen ion concentration of the acid solution at this time can be obtained From 10% to 9.8%.

In this way, when the initial hydrogen ion concentration is determined, the amount of acid solution replenishment is calculated and determined according to the difference between the target hydrogen ion concentration and the initial hydrogen ion concentration, so as to ensure that after injecting the acid solution replenishment amount of acid solution into the etching tank, the etching can be achieved. The hydrogen ion concentration in the groove reaches the target hydrogen ion concentration, so that the etching line width of wet etching can meet the setting requirements, and the ITO film with the designed area can be obtained to ensure the stability of the luminous flux parameters of the light emitting diode after wet etching .

FIG. 5 is a schematic diagram of a control device for wet etching provided by an embodiment of the present disclosure. As shown in Figure 5, the control device includes: an acquisition module 301, which is used to acquire the concentration of hydrogen ions in the etching tank; a control module 302, which is used to control the first electronically controlled valve when the concentration of hydrogen ions is lower than a preset threshold conduction.

Optionally, the control device further includes: a determination module 303, the acquisition module 301 is also used to acquire the target etching line width of the light emitting diode, and the determination module 303 is used to determine the preset threshold.

Optionally, the obtaining module 301 is also used to obtain the etching duration of the acid solution to be injected; the determination module 303 is also used to determine the current hydrogen concentration of the acid solution to be injected based on the corresponding relationship between the etching duration and the hydrogen ion concentration of the acid solution. Ion concentration, the etching time is the service time before the acid solution is injected into the etching tank; the control module 302 is also used to determine the amount of acid solution based on the current hydrogen ion concentration and a preset threshold, and control the conduction of the first electronic control valve to The etching tank transports the supplementary amount of acid solution so that the hydrogen ion concentration of the acid solution in the etching tank reaches a preset threshold.

Fig. 6 is a structural block diagram of a computer device provided by an embodiment of the present disclosure. As shown in FIG. 6 , the computer device includes: a processor 501 and a memory 502 .

The processor 501 may include one or more processing cores, such as a 4-core processor, an 8-core processor, and the like. The processor 501 can adopt at least one hardware form in DSP (Digital Signal Processing, digital signal processing), FPGA (Field-Programmable Gate Array, field programmable gate array), PLA (Programmable Logic Array, programmable logic array) accomplish. The processor 501 may also include a main processor and a coprocessor, the main processor is a processor for processing data in the wake-up state, and is also called a CPU (Central Processing Unit, central processing unit); the coprocessor is used to Low-power processor for processing data in standby state. In some embodiments, the processor 501 may be integrated with a GPU (Graphics Processing Unit, image processor), and the GPU is used for rendering and drawing content that needs to be displayed on the display screen. In some embodiments, the processor 501 may further include an AI (Artificial Intelligence, artificial intelligence) processor, where the AI processor is configured to process computing operations related to machine learning.

Memory 502 may include one or more computer-readable storage media, which may be non-transitory. The memory 502 may also include high-speed random access memory and non-volatile memory, such as one or more magnetic disk storage devices and flash memory storage devices. In some embodiments, the non-transitory computer-readable storage medium in the memory 502 is used to store at least one instruction, and the at least one instruction is used to be executed by the processor 501 to implement the wet method provided by the method embodiment of the present application. Etching control method.

In some embodiments, the computer device may optionally further include: a peripheral device interface 503 and at least one peripheral device. The processor 501, the memory 502, and the peripheral device interface 503 may be connected through buses or signal lines. Each peripheral device can be connected to the peripheral device interface 503 through a bus, a signal line or a circuit board.

Those skilled in the art can understand that the structure shown in FIG. 6 does not constitute a limitation to the computer device, and may include more or less components than shown in the figure, or combine certain components, or adopt different component arrangements.

An embodiment of the present disclosure also provides a non-transitory computer-readable storage medium, the non-transitory computer-readable storage medium stores computer instructions, and the computer instructions are used to make the computer perform the wet etching described in the above-mentioned embodiments Control Method. For example, the computer readable storage medium may be ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, among others.

Those of ordinary skill in the art can understand that all or part of the steps for implementing the above embodiments can be completed by hardware, and can also be completed by instructing related hardware through a program. The program can be stored in a computer-readable storage medium. The above-mentioned The storage medium mentioned may be a read-only memory, a magnetic disk or an optical disk, and the like.

The above does not limit the present disclosure in any form. Although the present disclosure has been disclosed above through the embodiments, it is not used to limit the present disclosure. Use the technical content disclosed above to make some changes or modify equivalent embodiments as equivalent changes, but any simple modifications and equivalent changes made to the above embodiments according to the technical essence of the present disclosure without departing from the content of the technical solution of the present disclosure and modifications, all still belong to the scope of the technical solutions of the present disclosure.

Claims (10)

1. A wet etching device, characterized in that, the wet etching device comprises: an etching tank (10), a hydrogen ion concentration detector (21), a first pipeline (31), a first electric control valve (41) and controller (50); The hydrogen ion concentration detector (21) is located in the etching tank (10), one end of the first pipeline (31) communicates with the etching tank (10), and the first electric control valve ( 41) connected to the first pipeline (31), the first pipeline (31) is used to transport the acid solution into the etching tank (10); The controller (50) is electrically connected to the hydrogen ion concentration detector (21) and the first electric control valve (41), and the controller (50) is configured to When the hydrogen ion concentration detected by the detector (21) is lower than a preset threshold value, the first electric control valve (41) is controlled to be turned on. 2. The wet etching device according to claim 1, characterized in that, the controller (50) is also used for the corresponding relationship between the etching line width and the concentration of hydrogen ions, and the target etching line of the light emitting diode wide, determine the preset threshold. 3. The wet etching device according to claim 2, characterized in that, the controller (50) is also used for the corresponding relationship between the etching duration and the hydrogen ion concentration of the acid solution, and the concentration of the acid solution to be injected. Etching duration is to determine the current concentration of hydrogen ions to be injected into the acid solution, and the etching duration is the service time before the acid solution is injected into the etching tank (10); A supplementary amount of acid liquid is determined based on the current hydrogen ion concentration and the preset threshold. 4. The wet etching device according to any one of claims 1 to 3, characterized in that, the wet etching device also comprises an infrared film thickness detector (60), and the infrared film thickness detector ( 60) electrically connected with the controller (50), the infrared film thickness detector (60) is used to detect the ITO film thickness before and after the etching of the light-emitting diode, and the controller (50) is also used to detect the thickness of the ITO film based on the etching The thickness of the ITO film before and after determines the etching rate of the ITO film. 5. The wet etching device according to any one of claims 1 to 3, characterized in that, the wet etching device further comprises a second pipeline (32) and a second electrically controlled valve (42), so One end of the second pipeline (32) communicates with the etching tank (10), the second electric control valve (42) is connected to the second pipeline (32), and the second pipeline (32) It is used to transport acid liquid into the etching tank (10). 6. The wet etching device according to any one of claims 1 to 3, characterized in that, the wet etching device further comprises a third pipeline (33), a heater (22), a circulation pump (23 ) and the collection tank (24), one end of the third pipeline (33) communicates with the etching tank (10), and the other end of the third pipeline (33) communicates with the collection tank (24), The collection tank (24) communicates with the etching tank (10), and the heater (22) and the circulation pump (23) are connected to the third pipeline (33). 7. The wet etching device according to any one of claims 1 to 3, characterized in that, the wet etching device further comprises a fourth pipeline (34) and a drain valve (25), the first One end of the four pipelines (34) communicates with the etching tank (10), and the drain valve (25) is connected to the fourth pipeline (34). 8. A control method for wet etching, characterized in that the control method is implemented by the wet etching device according to any one of claims 1 to 7, comprising: Obtain the hydrogen ion concentration in the etching tank; When the hydrogen ion concentration is lower than a preset threshold, the first electronically controlled valve is controlled to be turned on. 9. The control method according to claim 8, wherein, before obtaining the concentration of hydrogen ions in the etching tank, the control method further comprises: Obtain the target etching line width of the light-emitting diode; The preset threshold is determined based on the corresponding relationship between the etching line width and the hydrogen ion concentration. 10. The control method according to claim 9, characterized in that, after determining the preset threshold based on the corresponding relationship between the etching line width and the concentration of hydrogen ions, the control method further comprises: Obtain the etching time of the acid solution to be injected; Based on the corresponding relationship between the etching duration and the hydrogen ion concentration of the acid solution, determine the current hydrogen ion concentration to be injected into the acid solution, where the etching duration is the service time before the acid solution is injected into the etching tank; Based on the current hydrogen ion concentration and the preset threshold value, the amount of acid supplement is determined, and the first electric control valve is controlled to conduct, and the acid solution of the acid supplement is delivered to the etching tank, so that the The hydrogen ion concentration of the acid solution in the etching tank reaches the preset threshold.

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