CN116124889A - Metal pipeline corrosion monitoring method based on synthetic emission aperture imaging - Google Patents

Abstract

The invention discloses a metal pipeline corrosion monitoring method based on synthetic emission aperture imaging, which comprises the following steps: an array probe containing a plurality of wafers is arranged on the surface of a pipeline to be monitored, the wafers are arranged into a matrix in an n multiplied by m mode, and n is more than or equal to 3 and m is more than or equal to 3; determining areas to be excited according to a first set rule, wherein each area to be excited comprises at least 4 wafers; triggering each area to be excited to emit ultrasonic pulse signals according to a second set rule according to set delay; each wafer of the array probe receives echo signals of the ultrasonic pulse signals, an imaging diagram of the pipeline to be monitored is obtained after all the received echo signals are processed, and corrosion conditions of the pipeline to be monitored are judged according to the imaging diagram. By implementing the technical scheme of the invention, the wafer adopts a surface arrangement mode, so that deflection in a sound velocity space is realized, and the monitoring area is large; meanwhile, the excitation of a plurality of wafers improves the sensitivity of monitoring.

Description

A Corrosion Monitoring Method for Metal Pipeline Based on Synthetic Emission Aperture Imaging

technical field

The invention relates to the field of pipeline corrosion monitoring, in particular to a metal pipeline corrosion monitoring method based on synthetic emission aperture imaging.

Background technique

In the transmission of liquid media, pipeline transmission is an indispensable transmission method. When selecting pipelines, pipelines containing rubber linings are often used to contain corrosive fluids. Under the action of corrosive fluids, defects often occur at the rubber lining positions, often Defects The rubber lining is damaged and the rubber lining is peeled off. When monitoring the rubber lining state, according to the characteristics of the rubber lining, the ultrasonic pulse signal scanning method is used to judge whether the rubber lining is defective. When the rubber lining is intact, due to the large difference in the acoustic impedance of the metal material of the pipe in the rubber lining, a small part of the ultrasonic pulse signal energy enters the rubber lining through the pipe, and the remaining ultrasonic pulse signal energy will generate echoes at the joint between the pipe and the rubber lining The corresponding echo signal has a higher echo amplitude at the position where the depth is equal to the original wall thickness. When the rubber lining is partially damaged and the pipe body is corroded, the actual wall thickness of the corroded position is smaller than the original wall thickness, and the corresponding echo signal has a higher echo amplitude value at the position of the remaining wall thickness, and the maximum echo position is relatively intact Regions will advance. When the rubber liner falls off, an air gap is formed between the inner wall of the pipe and the rubber liner, and the ultrasonic pulse signal is approximately totally reflected at the metal-air interface. In the echo signal, the echo amplitude at the interface will increase relatively. At present, in the existing technology, the method of pipeline corrosion monitoring mostly adopts the line array probe, the chips in the line array probe are arranged in a way, and the sound velocity cannot be deflected in the space, so that the monitoring area is small; at the same time, the online In the monitoring process of the array probe, the excitation mode of a single chip is adopted, and the emitted sound velocity energy is not concentrated enough, resulting in insufficient monitoring sensitivity.

Contents of the invention

The technical problem to be solved by the present invention is to provide a metal pipeline corrosion monitoring method based on synthetic emission aperture imaging.

The technical solution adopted by the present invention to solve the technical problem is: a metal pipeline corrosion monitoring method based on synthetic emission aperture imaging, comprising the following steps:

S1: Install an array probe containing multiple chips on the surface of the pipeline to be monitored, the chips are arranged in a matrix in the form of n×m, n≥3, m≥3;

S2: Determine the region to be excited according to the first set rule, each region to be excited includes at least 4 wafers;

S3: Triggering each of the regions to be excited sequentially according to the set delay time to emit ultrasonic pulse signals according to the second set rule;

S4: Each chip of the array probe receives the echo signal of the ultrasonic pulse signal, processes all the received echo signals to obtain an imaging image of the pipeline to be monitored, and according to the imaging image Judge the corrosion condition of the pipeline to be monitored.

Preferably, the first setting rule is to divide the wafer into the first region to be excited in the form of a×a starting from the first array element of the matrix; Selecting the second array element in the row or column to divide the wafer into the next region to be excited in the form of a×a until all the array elements are divided, wherein a≥2.

Preferably, the second rule is to control the time delay for each of the wafers in the to-be-excited region to emit the ultrasonic pulse signal, and the wafers in the to-be-excited region excite the ultrasonic pulse signal according to the time delay. The chip emits the ultrasonic pulse signal, and the phase difference of the ultrasonic pulse signal reaching the surface of the pipeline to be monitored is an integer multiple of 2π, and the ultrasonic pulse signal is superimposed and enhanced on the surface of the pipeline to be monitored.

Preferably, said step S4 includes the following steps:

S41: Obtain an echo amplitude according to the echo signal;

S42: Process the echo amplitude to obtain the measured value of the echo amplitude, and the measured value of the echo amplitude forms the echo amplitude matrix;

S43: Obtain a composite echo magnitude according to the echo magnitude matrix, and obtain an imaging image of the pipeline to be monitored according to the composite echo magnitude.

Preferably, the step S41 includes the following steps:

S411: Obtain the coordinate points of the wafer;

S412: Obtain the geometric center point of the region to be excited according to the coordinate point of the wafer;

S413: Obtain the time t from transmitting the ultrasonic pulse signal to receiving the echo signal on the wafer according to the geometric center point;

S414: Obtain the corresponding echo amplitude function r(t) according to the different time t;

S415: Acquire the echo amplitude according to the echo amplitude function r(t).

Preferably, the step S42 includes the following steps:

S421: Obtain the maximum value of the echo amplitude;

S422: Judging whether the echo amplitude meets the echo amplitude elimination rule, if not, the echo amplitude is the actual measured value of the echo amplitude, and if so, assigning 0 to the echo amplitude;

S423: Acquire the measured echo amplitude values, and form the echo amplitude matrix according to the measured echo amplitude values.

Preferably, the echo amplitude elimination rule is whether the echo amplitude is less than 20% of the maximum value of the echo amplitude, and if so, in order to satisfy the echo amplitude elimination rule, the The echo amplitude is assigned 0, if not, the echo amplitude is the actual measured value of the echo amplitude.

Preferably, the time t is determined through the calculation process of formula 1:

Formula 1

Wherein, c is the sound velocity in the pipe material, x, y, z are the spatial coordinate points of the points to be monitored, x _i , y _i , z _i are the geometric center points of the wafer in the excitation area, x _j , y _j , z _j are spatial coordinate points for receiving the wafer, and z _i , z _j are 0 at this time.

Preferably, the echo synthesis amplitude is determined through the calculation process of formula 2:

Formula 2

Among them, r _ij (t) is the echo amplitude value processed by the echo amplitude value elimination rule, o(x, y, z) is the coordinate (x, y, z) in the area to be detected The synthetic echo amplitude of the point.

Preferably, the n=4 and the m=8.

Implementing the technical solution of the present invention has the following beneficial effects: the wafers are arranged in a plane manner, which realizes the deflection in the sound velocity space, and the monitoring area is large; at the same time, the excitation of multiple wafers improves the monitoring sensitivity.

Description of drawings

The present invention will be further described below in conjunction with accompanying drawing and embodiment, in the accompanying drawing:

Fig. 1 is a schematic flow chart of an embodiment of the present invention;

FIG. 2 is a schematic diagram of an echo signal processing flow in an embodiment of the present invention;

Fig. 3 is a schematic diagram of the echo amplitude acquisition process of the embodiment of the present invention;

Fig. 4 is a schematic diagram of the process of obtaining the measured value of the echo amplitude according to the embodiment of the present invention.

Detailed ways

In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations. Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

It should be noted that like numerals and letters denote similar items in the following figures, therefore, once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.

In a preferred embodiment, as shown in FIG. 1 , it is a schematic flowchart of a metal pipeline corrosion monitoring method based on synthetic emission aperture imaging provided by the present invention. Specifically, the metal pipeline corrosion monitoring method includes the following steps:

In step S1, an array probe containing multiple chips is installed on the surface of the pipeline to be monitored, and the chips are arranged in a matrix in the form of n×m, where n≥3 and m≥3. Specifically, on-site personnel use installation tools to install the array probe containing multiple chips on the surface of the pipeline to be monitored, wherein all the chips are arranged in an n×m arrangement, n≥3, m≥3, when arranging, according to The actual monitoring area of the pipeline to be monitored can be installed with one array probe, or multiple array probes can be arranged. In this embodiment, there are 32 wafers in the selected array probe, and the wafers are arranged in a 4×8 manner on the surface of the pipeline to be monitored. Of course, when selecting the array probe, the array probe whose monitoring area is larger than the area to be monitored on the pipeline to be monitored can also be selected.

Further, in some other embodiments, the array probe can be any other array probe whose number of chips is greater than or equal to 9, and the chips are arranged in an n×m manner, where n≧3 and m≧3.

Step S2, determining the region to be excited according to the first set rule, and each region to be excited includes at least 4 wafers. Specifically, after the array probe is arranged, it is necessary to determine the excitation mode of the array probe. In this embodiment, the excitation mode adopted is a multi-chip excitation mode. The wafer is divided into areas to be excited. Among them, the first rule is to start from the first array element of the matrix and divide all the wafers in the form of a×a, and the first area divided from the first array element as the starting bit is a to-be-excited area, And divide the next area to be excited from the array element in the row or column adjacent to the first array element in the matrix until all chips are divided, wherein a≥2.

Further, in another embodiment, when the region to be excited in the array probe is divided, any wafer can be arbitrarily selected as the starting position and divided according to the division method.

Further, in another embodiment, when the array probe divides the region to be excited, two or more different division methods of a×a and b×b can be used, where a≥2 and b≥2.

Further, in another embodiment, the region to be excited in the same array probe can be divided by a × b division method, where a≠b, and a≧2 and b≧2.

Further, in another embodiment, when the different areas to be excited in the same array probe are divided into array elements, two or more different division methods of a×a and a×b can be used, among which at least one The first division method adopts the division method of a×b, where a≠b, and a≥2 and b≥2.

Step S3, sequentially trigger each to-be-excited area to emit ultrasonic pulse signals according to the second set rule according to the set time delay. Specifically, before the array probe starts to excite the wafer, it is also necessary to set the excitation delay time. According to the preset excitation delay time, the wafer in the area to be excited in the array probe is excited. After exciting an area, press the set Excitation delay for the next region to be excited. The chip in the excited area emits an ultrasonic pulse signal according to the second setting rule, and the chip in the excited area emits an ultrasonic pulse signal according to the second setting rule. After the chip in the excited area emits the ultrasonic pulse signal, it is ready to be excited A region to be activated.

In this embodiment, the second setting rule is to control the delay time of the ultrasonic pulse signal emitted by each chip in the region to be excited, so that the ultrasonic pulse signal emitted between the two excited chips produces a phase difference. Specifically, after a wafer in the area to be excited emits an ultrasonic pulse signal, the next wafer is excited according to the time delay. By setting the time delay, all wafers in the area to be excited are in the process of emitting the ultrasonic pulse signal. When the ultrasonic pulse signal arrives At a certain point in the space, the phase difference between the ultrasonic pulse signals is an integer multiple of 2π. At this time, the ultrasonic pulse signals are superimposed and enhanced on the surface of the pipeline to be monitored, and the echo signal received by the receiving chip is also a superimposed ultrasonic pulse. The echo signal generated by the signal realizes the synthetic emission aperture monitoring of the point to be monitored on the pipeline to be monitored.

Further, in another embodiment, the time delay can be set so that when the ultrasonic pulse signals emitted by the wafer in the same region to be excited reach a certain point in the space, 4π integer multiples are generated between the ultrasonic pulse signals Or a phase difference of 2nπ integer multiples. At this time, the ultrasonic pulse signal is superimposed at this point, and the echo signal received by the receiving chip is also the echo signal generated by the superimposed ultrasonic pulse signal, wherein n is an integer.

Step S4, each chip of the array probe receives the echo signal of the ultrasonic pulse signal, processes all the received echo signals to obtain an imaging image of the pipeline to be monitored, and judges the corrosion condition of the pipeline to be monitored according to the imaging image. Specifically, the ultrasonic pulse signal is superimposed and enhanced at a certain point in space, and the chip in the array probe receives the echo signal generated by the superimposed and enhanced ultrasonic pulse signal, and processes the acquired echo signal to form an imaging map of the pipeline to be monitored.

As shown in Figure 2, in this embodiment, step S4 specifically includes the following steps:

S41: Obtain the echo amplitude according to the echo signal. Specifically, when the chip in the array probe receives the ultrasonic pulse signal, the received ultrasonic pulse signal is a continuous wave form, and the received echo amplitude is obtained from the wave form.

S42: Process the echo amplitude, obtain the measured value of the echo amplitude, and the measured value of the echo amplitude forms an echo amplitude matrix. Specifically, after obtaining the echo amplitude, it is necessary to perform secondary processing on the echo amplitude according to the echo elimination rule, and eliminate the echo amplitude that does not have representative significance, and the final echo amplitude that is not eliminated is called The measured value of the echo amplitude, several measured values of the echo amplitude form an echo matrix, and the formed echo matrix is:

[r ₁₁ (t),r ₁₂ (t)……r ₁ (ma)(t)

r ₂₁ (t),r ₂₂ (t)……r ₂ (ma)(t)

……………………………

r _(na)1 (t),r _(na)2 (t)……r _(na)(ma) (t)]

Among them, r ₁₁ (t) is the emission of the first group of chips, and the echo amplitude received by the first chip at time t; r ₂₁ (t) is the emission of the second group of chips, and the echo amplitude received by the first chip at time t Received echo amplitude; r _{(na) (ma)} (t) is the echo amplitude received by the (na)th group of chips and received by the (ma)th chip.

In this embodiment, the echo amplitude elimination rule is whether the echo amplitude is less than 20% of the maximum value of the echo amplitude, if so, in order to satisfy the echo amplitude elimination rule, the echo amplitude is assigned 0, if not , and the echo amplitude is the measured value of the echo amplitude. It can be understood that any secondary processing method used to eliminate the acquired echo signal can be regarded as the echo amplitude elimination rule. In this embodiment, the maximum echo amplitude is greater than 20% as an example. It should be noted that those skilled in the art apply other proportional parameters to the inventive concept of this embodiment, which also belongs to the protection scope of this embodiment.

S43: Obtain the synthetic echo amplitude according to the echo amplitude matrix, and obtain the imaging map of the pipeline to be monitored according to the synthetic echo amplitude. Specifically, the measured value of the echo amplitude is obtained through the calculation process of the formula 2 to obtain the synthetic echo amplitude. After a scan is completed, multiple synthetic echo amplitudes are obtained, and the pipeline to be monitored is formed according to the synthetic echo amplitude. Imaging diagram. Among them, formula 2 is:

Formula 2

r _ij (t) is the measured value of the echo amplitude after the echo amplitude elimination rule processing, o(x, y, z) is the synthesized echo amplitude of the point coordinates (x, y, z) in the area to be monitored value.

As shown in Figure 3, in this embodiment, step S41 specifically includes the following steps:

S411: Obtain the coordinate points of the wafer;

S412: Obtain the geometric center point of the region to be excited according to the coordinate point of the wafer;

S413: Obtain the time t from transmitting the ultrasonic pulse signal to receiving the echo signal by the chip according to the geometric center point;

S414: Obtain the echo amplitude function r(t) corresponding to different time t;

S415: Acquire the echo amplitude according to the echo amplitude function r(t).

Specifically, the propagation time of the ultrasonic pulse signal is related to the propagation distance. Understandably, the coordinate points of each wafer in the region to be excited are obtained first, and the geometric center points of all wafers in the region to be excited are obtained through the obtained coordinate points, the distance from the geometric center point to the point to be monitored, and the distance from the point to be monitored to the receiver The distance of the chip is fixed. After the distance is determined, the time t when the chip receives the echo signal is calculated according to the calculation process of formula 1. According to different time t, the echo amplitude function r(t) corresponding to different time t is obtained. , according to the echo amplitude function r(t), get the echo amplitude,

Formula 1

Among them, c is the sound velocity in the pipe material, x, y, z are the spatial coordinates of the points to be monitored, xi, yi, zi are the geometric center points of the chip in the area to be excited, xj, yj, zj are the receiving chip Space coordinate point, at this time zi, zj are 0.

As shown in Figure 4, in this embodiment, step S42 specifically includes the following steps:

S421: Obtain the maximum value of the echo amplitude;

S422: Determine whether the echo amplitude meets the echo amplitude elimination rule, if not, the echo amplitude is the actual measured value of the echo amplitude, and if so, assign 0 to the echo amplitude;

S423: Obtain the measured value of the echo amplitude, and form an echo amplitude matrix according to the measured value of the echo amplitude.

Specifically, the acquired echo amplitudes are processed according to the echo amplitude elimination rules, the echo amplitudes that do not meet the echo amplitude elimination rules are the actual echo amplitude values, and the The echo amplitude is assigned 0, and the measured values of the echo amplitude form the echo amplitude matrix.

In this embodiment, after the array probe receives the echo signal, the echo signal is processed by the amplifying circuit and transmitted to the network terminal by applying the Internet of Things technology, wherein the network terminal has functions of data viewing and defect warning. The data viewing function can display the synthetic echo matrix measured by the array probe in real time, and display the two-dimensional map of the monitoring area of the pipeline to be monitored visually by means of RGB colors representing the measured values of different echo amplitudes. At the same time, it can be combined with the array probe The parameters such as the installation position and pipeline specifications, etc., the echo synthesis amplitude is marked in the 3D model by RGB color to form a 3D imaging map of the pipeline to be monitored, and the corrosion situation of the pipeline to be monitored can be intuitively displayed through the 3D imaging map. The defect early warning function is to measure the echo amplitude matrix of multiple groups of pipelines to be monitored in various states before the array probe is installed, and learn to identify the echo amplitude matrix in various states through the neural network machine learning model. The echo amplitude matrix obtained by each scan is identified to realize the automatic identification and judgment of the status of the pipeline to be monitored. When a suspected defect is found on the pipeline to be monitored, the network end will automatically send an alarm email or SMS to remind the on-site personnel for further confirmation. The status of the pipeline to be monitored.

It can be understood that the above examples only express the preferred implementation of the present invention, and its description is more specific and detailed, but it should not be interpreted as limiting the patent scope of the present invention; Under the premise of departing from the concept of the present invention, the above-mentioned features can be freely combined, and some deformations and improvements can also be made, which all belong to the protection scope of the present invention; therefore, all equivalent transformations made with the scope of the claims of the present invention are Should belong to the scope covered by the claims of the present invention.

Claims (10)

1. The metal pipeline corrosion monitoring method based on synthetic emission aperture imaging is characterized by comprising the following steps of:

s1: an array probe containing a plurality of wafers is arranged on the surface of a pipeline to be monitored, the wafers are arrayed into a matrix in an n multiplied by m mode, and n is more than or equal to 3, and m is more than or equal to 3;

s2: determining areas to be excited according to a first set rule, wherein each area to be excited comprises at least 4 wafers;

s3: triggering each to-be-excited area to emit ultrasonic pulse signals according to a second set rule according to set delay;

s4: and each wafer of the array probe receives the echo signals of the ultrasonic pulse signals, an imaging diagram of the pipeline to be monitored is obtained after all the received echo signals are processed, and the corrosion condition of the pipeline to be monitored is judged according to the imaging diagram.

2. The method of claim 1, wherein the first set rule is to divide the wafer into a first of the regions to be excited in a x a form starting from a first element of the matrix; and selecting a second array element from the rows or columns of the matrix, and dividing the wafer into the next area to be excited in a form of a multiplied by a until all the array elements are divided, wherein a is more than or equal to 2.

3. The method according to claim 1, wherein the second rule is to control a time delay of the transmission of the ultrasonic pulse signal by each of the wafers in the region to be excited, the ultrasonic pulse signal is transmitted by exciting the wafers in the region to be excited at the time delay, and a phase difference of the ultrasonic pulse signal reaching the surface of the pipe to be monitored is an integer multiple of 2Ω, the ultrasonic pulse signal being superimposed and enhanced on the surface of the pipe to be monitored.

4. The method of claim 1, wherein the step S4 comprises the steps of:

s41: acquiring an echo amplitude value according to the echo signal;

s42: processing the echo amplitude value to obtain the echo amplitude value actual measurement value, wherein the echo amplitude value actual measurement value forms the echo amplitude matrix;

s43: and acquiring a composite echo amplitude according to the echo amplitude matrix, and acquiring an imaging diagram of the pipeline to be monitored according to the composite echo amplitude.

5. The method of monitoring corrosion of a metal pipe according to claim 4, wherein the step S41 includes the steps of:

s411: acquiring coordinate points of the wafer;

s412: acquiring a geometric center point of the region to be excited according to the coordinate point of the wafer;

s413: acquiring the time t from transmitting the ultrasonic pulse signal to receiving the echo signal by the wafer according to the geometric center point;

s414: acquiring a corresponding echo amplitude function r (t) according to different time t;

s415: and acquiring the echo amplitude according to the echo amplitude function r (t).

6. The method of monitoring corrosion of a metal pipe according to claim 4, wherein the step S42 comprises the steps of:

s421: acquiring the maximum value of the echo amplitude;

s422: judging whether the echo amplitude meets an echo amplitude rejection rule or not, if not, judging that the echo amplitude is an actual measurement value of the echo amplitude, and if so, giving 0 to the echo amplitude;

s423: and acquiring the echo amplitude actual measurement value, and forming the echo amplitude matrix according to the echo amplitude actual measurement value.

7. The method according to claim 6, wherein the echo amplitude rejection rule is whether the echo amplitude in the echo amplitude function r (t) is less than 20% of the maximum value of the echo amplitude, if yes, the echo amplitude is assigned 0, and if not, the echo amplitude is an actual measurement value of the echo amplitude.

8. The method of claim 4, wherein the time t is determined by a calculation process of equation 1:

equation 1

Wherein c is the sound velocity in the pipeline material, x, y and z are the space coordinate points of the point to be monitored, and x _i 、y _i 、z _i X is the geometric center point of the wafer in the excitation region _j 、y _j ，z _j To receive the spatial coordinate point of the wafer, z _i 、z _j Is 0.

9. The method of claim 4, wherein the echo synthesis amplitude is determined by a calculation process of equation 2:

equation 2

Wherein r is _ij And (t) is the echo amplitude processed by the echo amplitude eliminating rule, and o (x, y, z) is the synthesized echo amplitude of the point with the coordinates of (x, y, z) in the region to be detected.

10. The method of claim 1, wherein n = 4 and m = 8.

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