CN116107001B - A LaNx/La/B4C extreme ultraviolet multilayer mirror and its fabrication method - Google Patents
A LaNx/La/B4C extreme ultraviolet multilayer mirror and its fabrication methodInfo
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- CN116107001B CN116107001B CN202211621173.6A CN202211621173A CN116107001B CN 116107001 B CN116107001 B CN 116107001B CN 202211621173 A CN202211621173 A CN 202211621173A CN 116107001 B CN116107001 B CN 116107001B
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- G—PHYSICS
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Abstract
本发明属于高反射极紫外元件技术领域，提供了一种LaNx/La/B4C极紫外多层膜反射镜及其制备方法。本发明的LaNx/La/B4C极紫外多层膜反射镜，包括层叠设置在基底上的多周期LaNx/La/B4C层；所述多周期LaNx/La/B4C层包括若干个层叠设置的LaNx/La/B4C层；所述LaNx/La/B4C层包括依次层叠设置的LaNx层、La层和B4C层；所述LaNx/La/B4C中的LaNx层和所述基底接触。本发明在B4C层和LaNx层之间引入La层，来减少LaNx和B4C之间的相互作用，从而减少界面扩散来增强层间的光学对比度，提高LaNx/La/B4C极紫外多层膜反射镜的理论反射率。
This invention belongs to the technical field of high-reflectivity extreme ultraviolet (EUV) components, and provides a LaNx/La/ B₄C EUV multilayer mirror and its fabrication method. The LaNx/La/ B₄C EUV multilayer mirror of this invention includes a multi-period LaNx/La/ B₄C layer stacked on a substrate; each multi-period LaNx/La/ B₄C layer comprises a plurality of stacked LaNx/La/ B₄C layers; each LaNx/La/ B₄C layer includes a LaNx layer, a La layer, and a B₄C layer stacked sequentially; the LaNx layer in the LaNx/La/ B₄C layer is in contact with the substrate. This invention introduces a La layer between the B₄C layer and the LaNx layer to reduce the interaction between LaNx and B₄C , thereby reducing interfacial diffusion, enhancing interlayer optical contrast, and improving the theoretical reflectivity of the LaNx/La/ B₄C EUV multilayer mirror.
Description
Technical Field
The invention relates to the technical field of high reflection extreme ultraviolet elements, in particular to a LaNx/La/B 4 C extreme ultraviolet multilayer film reflector and a preparation method thereof.
Background
Currently, as integrated circuits move toward miniaturization and high performance, extreme ultraviolet lithography has attracted considerable attention as a concept of one possible approach to fabricating very large scale integrated circuits. Extreme ultraviolet lithography may further reduce the size of the integrated circuit, reduce the power consumption of the integrated circuit, and increase the productivity of the integrated circuit.
The extreme ultraviolet lithography system mainly comprises 3 parts, namely an extreme ultraviolet light source system, an extreme ultraviolet light reflection and collection system and an illumination exposure etching system. Extreme ultraviolet light reflection collection systems require the configuration of high reflectivity multilayer mirrors, la/B 4 C multilayer mirrors being considered as one of the most promising high reflectivity multilayer mirrors. However, because the La/B 4 C multilayer mirror has thinner film layers and severe interface diffusion, the optical contrast is reduced due to the mixing of the thin layers at the interfaces, so that the actual reflectivity of the La/B 4 C multilayer mirror is reduced by 15-20% compared with the theoretical reflectivity in practical application.
Disclosure of Invention
In view of the above, the present invention aims to provide a LaNx/La/B 4 C euv multilayer mirror and a method for producing the same. The LaNx/La/B 4 C extreme ultraviolet multilayer film reflector provided by the invention has high theoretical reflectivity, and the actual reflectivity is less reduced compared with the theoretical reflectivity in practical application.
In order to achieve the above object, the present invention provides the following technical solutions:
The invention provides a LaNx/La/B 4 C extreme ultraviolet multilayer film reflector, which comprises a multi-period LaNx/La/B 4 C layer which is laminated on a substrate;
The multi-period LaNx/La/B 4 C layer comprises a plurality of LaNx/La/B 4 C layers which are arranged in a stacked mode;
The LaNx/La/B 4 C layer comprises a LaNx layer, a La layer and a B 4 C layer which are sequentially stacked;
LaNx layers in LaNx/La/B 4 C are in contact with the substrate;
in the LaNx layers, x is more than 0 and less than or equal to 1.
Preferably, the LaNx/La/B 4 C layer has a single period thickness of 3.38nm.
Preferably, the LaNx layer has a thickness of 1.15nm, the La layer has a thickness of 0.3nm, and the B 4 C layer has a thickness of 1.93nm.
Preferably, the cycle number of the multi-cycle LaNx/La/B 4 C layer is 200-250.
Preferably, the substrate is a glass substrate or a silicon wafer.
The invention also provides a preparation method of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflector, which comprises the following steps:
Sequentially preparing LaNx layers, la layers and B 4 C layers on a substrate, and repeating the process of sequentially preparing LaNx layers, la layers and B 4 C layers to obtain the LaNx/La/B 4 C extreme ultraviolet multilayer film reflector.
Preferably, the preparation method of the LaNx layers is first direct current magnetron sputtering, the parameters of the first direct current magnetron sputtering comprise that background vacuum before the first direct current magnetron sputtering is less than or equal to 1 multiplied by 10 -4 Pa, a sputtering mode is a grazing target, a target is a lanthanum target, the purity of the target is more than or equal to 99.5%, working gas comprises argon and nitrogen, the volume flow of the argon is 15-30 sccm, the volume flow of the nitrogen is 5-60 sccm, the volume flow ratio of the argon to the nitrogen is 3:2-1:2, the working pressure is 0.1Pa, and the sputtering power is 60-90W.
Preferably, the preparation method of the La layer is second direct current magnetron sputtering, and the parameters of the second direct current magnetron sputtering comprise a glancing target, a lanthanum target, the purity of the target is more than or equal to 99.5%, argon is used as working gas, the working pressure is 0.1-0.12 Pa, and the sputtering power is 15-20W.
Preferably, the preparation method of the B 4 C layer is third direct current magnetron sputtering, wherein the parameters of the third direct current magnetron sputtering comprise a glancing target, a B 4 C target, the purity of the target is more than or equal to 99.5%, the working gas is argon, the working gas pressure is 0.1Pa, and the sputtering power is 100-120W.
Preferably, the roughness of the substrate is 0.3nm.
The invention provides a LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror which comprises a multi-period LaNx/La/B 4 C layer, wherein the multi-period LaNx/La/B 4 C layer comprises a plurality of LaNx/La/B 4 C layers, the LaNx/La/B 4 C layer comprises LaNx layers, la layers and B 4 C layers, the LaNx layers, the La layers and the B 4 C layers are sequentially stacked, the LaNx layers in the LaNx/La/B 4 C layer are in contact with a substrate, and x is more than 0 and less than or equal to 1 in the LaNx layers. According to the invention, improvement is made on the basis of the La/B 4 C multilayer film, the La layer is subjected to partial nitridation treatment to form LaN, the non-nitrided part is used as an ultrathin La barrier layer to reduce interface diffusion so as to enhance interlayer optical contrast, and the theoretical reflectivity of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror is improved, and meanwhile, the actual reflectivity of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror is reduced by only 4-8% compared with the theoretical reflectivity when the mirror is applied.
The invention also provides a preparation method of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror, which comprises the following steps of sequentially preparing a LaNx layer, a La layer and a B 4 C layer on a substrate, and repeating the process of sequentially preparing the LaNx layer, the La layer and the B 4 C layer to obtain the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror. The preparation method provided by the invention is simple to operate.
Drawings
FIG. 1 is a schematic structural diagram of a LaNx/La/B 4 C extreme ultraviolet multilayer film reflector provided by the invention, wherein 1 is a substrate, 2 is a multi-period LaNx/La/B 4 C layer, 21 is a LaNx layer, 22 is a La layer, and 23 is a B 4 C film layer;
FIG. 2 is a graph showing the theoretical reflectivity curves of the reflectors obtained in example 1 and comparative examples 1-2;
fig. 3 is a partial enlarged view of fig. 2.
Detailed Description
The invention provides a LaNx/La/B 4 C extreme ultraviolet multilayer film reflector, which comprises a multi-period LaNx/La/B 4 C layer which is laminated on a substrate;
The multi-period LaNx/La/B 4 C layer comprises a plurality of LaNx/La/B 4 C layers which are arranged in a stacked mode;
The LaNx/La/B 4 C layer comprises a LaNx layer, a La layer and a B 4 C layer which are sequentially stacked;
LaNx layers in LaNx/La/B 4 C are in contact with the substrate;
in the LaNx layers, x is more than 0 and less than or equal to 1.
The LaNx/La/B 4 C extreme ultraviolet multilayer film reflector provided by the invention comprises a substrate. In the present invention, the substrate is preferably a glass substrate or a silicon wafer.
The LaNx/La/B 4 C extreme ultraviolet multilayer film reflector provided by the invention comprises a multi-period LaNx/La/B 4 C layer which is laminated on the substrate. In the invention, the multi-period LaNx/La/B 4 C layer comprises a plurality of LaNx/La/B 4 C layers which are stacked, the LaNx/La/B 4 C layer comprises a LaNx layer, a La layer and a B 4 C layer which are stacked in sequence, the LaNx layer in the LaNx/La/B 4 C layer is in contact with the substrate, and x is more than 0 and less than or equal to 1 in the LaNx layer. In the present invention, the single period thickness of the LaNx/La/B 4 C layer is preferably 3.38nm. In the present invention, the thickness of the LaNx layer is preferably 1.15nm, the thickness of the La layer is preferably 0.3nm, and the thickness of the B 4 C layer is preferably 1.93nm.
In the invention, the cycle number of the multi-cycle LaNx/La/B 4 C layer is preferably 200-250.
The invention provides a preparation method of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflector, which comprises the following steps:
Sequentially preparing LaNx layers, la layers and B 4 C layers on a substrate, and repeating the process of sequentially preparing LaNx layers, la layers and B 4 C layers to obtain the LaNx/La/B 4 C extreme ultraviolet multilayer film reflector.
In the invention, the roughness of the substrate is preferably 0.3-0.4 nm.
In the present invention, the substrate preferably further comprises ultrasonic cleaning prior to preparing LaNx layers.
In the invention, the preparation method of the LaNx layers is preferably first direct current magnetron sputtering, the parameters of the first direct current magnetron sputtering comprise that the background vacuum before the first direct current magnetron sputtering is preferably less than or equal to 1 multiplied by 10 -4 Pa, the sputtering mode is preferably a glancing target, the target is preferably a lanthanum target, the purity of the target is preferably more than or equal to 99.5%, the working gas preferably comprises argon and nitrogen, the volume flow of the argon is preferably 15-30 sccm, the volume flow of the nitrogen is preferably 5-60 sccm, the volume flow ratio of the argon to the nitrogen is preferably 3:2-1:2, the working air pressure is preferably 0.1Pa, the sputtering power is preferably 60-90W, and further preferably 70-80W.
In the invention, the preparation method of the La layer is preferably second direct current magnetron sputtering, and the parameters of the second direct current magnetron sputtering comprise that the sputtering mode is preferably a glancing target, the target material is preferably a lanthanum target, the purity of the target material is preferably more than or equal to 99.5%, the working gas is preferably argon, the working gas pressure is preferably 0.1-0.12 Pa, and the sputtering power is preferably 15-20W.
In the invention, the preparation method of the B 4 C layer is preferably third direct current magnetron sputtering, and the parameters of the third direct current magnetron sputtering comprise that the sputtering mode is preferably a glancing target, the target material is preferably a B 4 C target, the purity of the target material is preferably more than or equal to 99.5%, the working gas is preferably argon, the working pressure is preferably 0.1Pa, the sputtering power is preferably 100-120W, further preferably 105-115W, and more preferably 110W.
In the present invention, the number of repetitions is preferably set according to the number of cycles required for LaNx/La/B 4 C layers.
The LaNx/La/B 4 C euv multilayer mirror and the method for producing the same according to the present invention are described in detail below with reference to examples, but they should not be construed as limiting the scope of the present invention.
Example 1
A preparation method of LaNx/La/B 4 C extreme ultraviolet multilayer film reflector comprises the following steps:
And silicon chips are used as a substrate, and the roughness of the substrate is 0.3nm.
A LaNx (0 < x is less than or equal to 1) layer is prepared on a substrate by adopting a first direct current magnetron sputtering, wherein parameters comprise background vacuum before preparing a priming layer is less than or equal to 1 multiplied by 10 -4 Pa, a sputtering mode is a grazing target, a target material is a lanthanum target (purity is 99.95%), working gas comprises argon and nitrogen, the volume flow of the argon is 30sccm, the volume flow of the nitrogen is 30sccm, sputtering power is 60W, and working pressure is 0.1Pa.
And preparing the La layer on the priming layer by adopting a second direct current magnetron sputtering method, wherein the parameters comprise a sputtering mode of a glancing target, a lanthanum target (purity is 99.95%), argon as working gas, 15W of sputtering power and 0.1Pa of working air pressure.
And preparing a B 4 C layer on the La layer by adopting a third direct current magnetron sputtering method, wherein the parameters include a sputtering mode of a glancing target, a target material of B 4 C (purity is 99.5%), working gas of argon, working air pressure of 0.1Pa and sputtering power of 120W.
The sputter rate of each material can be determined by a grazing incidence X-ray reflection test. Knowing the sputtering rate of each material, it was found that the thickness of LaNx (0 < x≤1) layers prepared by the first DC magnetron sputtering method was 1.15nm, the thickness of La layers prepared by the second DC magnetron sputtering method was 0.3nm, and the thickness of B 4 C layers prepared by the third DC magnetron sputtering method was 1.93nm, i.e., the cycle thickness of LaNx/La/B 4 C layers was 3.38nm.
And sequentially repeating the first direct current magnetron sputtering method for preparing LaNx (x is more than 0 and less than or equal to 1) layers, the second direct current magnetron sputtering method for preparing La layers, and the third direct current magnetron sputtering method for preparing B 4 C layers 199 times to obtain the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror.
Comparative example 1
The difference from example 1 is that the second direct current magnetron sputtering is not used for preparing the La layer, and the rest operation is the same as example 1, and the specific preparation method is as follows:
And silicon chips are used as a substrate, and the roughness of the substrate is 0.3nm.
A LaNx (0 < x is less than or equal to 1) layer is prepared on a substrate by adopting a first direct current magnetron sputtering, wherein parameters comprise background vacuum before preparing a priming layer is less than or equal to 1 multiplied by 10 -4 Pa, a sputtering mode is a grazing target, a target material is a lanthanum target (purity is 99.95%), working gas comprises argon and nitrogen, the volume flow of the argon is 30sccm, the volume flow of the nitrogen is 30sccm, sputtering power is 60W, and working pressure is 0.1Pa.
And preparing a B 4 C layer on the LaNx layer by adopting a third direct current magnetron sputtering method, wherein the parameters include a sputtering mode of a glancing target, a target material of B 4 C (purity is 99.5%), working gas of argon, working air pressure of 0.1Pa and sputtering power of 120W.
Knowing the sputtering rate of each material, the thickness of LaNx (0 < x≤1) layers prepared by the first DC magnetron sputtering method was 1.3nm, the thickness of B 4 C layers prepared by the third DC magnetron sputtering method was 2.08nm, i.e. the cycle thickness of LaNx/B 4 C layers was 3.38nm.
And sequentially repeating the first direct current magnetron sputtering method to prepare LaNx layers, and preparing the B 4 C layer 199 times by a third direct current magnetron sputtering method to obtain the LaNx/B 4 C extreme ultraviolet multilayer film reflecting mirror.
Comparative example 2
The difference from example 1 is that LaNx layers are prepared without using the first direct current magnetron sputtering, and the rest of the operations are the same as those of example 1, and the specific preparation method is as follows:
And silicon chips are used as a substrate, and the roughness of the substrate is 0.3nm.
And preparing the La layer on the priming layer by adopting a second direct current magnetron sputtering method, wherein the parameters comprise a sputtering mode of a glancing target, a lanthanum target (purity is 99.95%), argon as working gas, 15W of sputtering power and 0.1Pa of working air pressure.
And preparing a B 4 C layer on the La layer by adopting a third direct current magnetron sputtering method, wherein the parameters include a sputtering mode of a glancing target, a target material of B 4 C (purity is 99.5%), working gas of argon, working air pressure of 0.1Pa and sputtering power of 120W.
And (3) sequentially repeating the second direct current magnetron sputtering method to prepare a La layer, and preparing the B 4 C layer 199 times by a third direct current magnetron sputtering method to obtain the La/B 4 C extreme ultraviolet multilayer film reflector.
The theoretical reflectances of the mirrors obtained in example 1 and comparative examples 1 to 2 were measured, and the results are shown in fig. 2 to 3 and table 1.
TABLE 1 theoretical reflectivity of mirrors obtained in example 1 and comparative examples 1-2
| Example 1 | Comparative example 1 | Comparative example 2 | |
| Theoretical reflectivity | 69.54% | 69.1% | 68.65% |
As can be seen from FIGS. 2-3 and Table 1, the theoretical reflectivity of LaNx/La/B 4 C extreme ultraviolet multilayer film mirror is 69.54% and the theoretical reflectivity of LaNx/B 4 C extreme ultraviolet multilayer film mirror is 69.1%, and compared with the LaNx/B 4 C extreme ultraviolet multilayer film mirror, the theoretical reflectivity of the LaNx/La/B 4 C extreme ultraviolet multilayer film mirror provided by the invention is optimized. Although the theoretical reflectivity of the LaNx// B 4 C extreme ultraviolet multilayer film reflecting mirror is slightly improved compared with that of the LaNx/B 4 C extreme ultraviolet multilayer film reflecting mirror and the La/B 4 C reflecting mirror, in practical application, as the La layer is improved on the basis of the La/B 4 C multilayer film, the La layer is partially nitrided to form LaN, and the non-nitrided part is used as an ultrathin La barrier layer to reduce interface diffusion so as to enhance the optical contrast between layers, so that the practical reflectivity of the LaNx/La/B 4 C extreme ultraviolet multilayer film reflecting mirror is reduced by only 4-8% compared with that of the theoretical reflectivity in application.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (9)
1. A LaNx/La/B 4 C euv multilayer mirror, characterized by consisting of a multicycle LaNx/La/B 4 C layer laminated on a substrate;
the multi-period LaNx/La/B4C layer consists of a plurality of LaNx/La/B 4 C layers which are arranged in a stacked mode;
The LaNx/La/B 4 C layer consists of a LaNx layer, a La layer and a B 4 C layer which are sequentially stacked;
LaNx layers in LaNx/La/B 4 C are in contact with the substrate;
in the LaNx layers, x is more than 0 and less than or equal to 1;
the cycle number of the multi-cycle LaNx/La/B 4 C layer is 200-250.
2. The LaNx/La/B 4 C extreme ultraviolet multilayer film mirror of claim 1, wherein the single cycle thickness of the LaNx/La/B 4 C layer is 3.38nm.
3. The LaNx/La/B 4 C extreme ultraviolet multilayer film mirror according to claim 1 or 2, wherein the LaNx layer has a thickness of 1.15nm, the La layer has a thickness of 0.3nm, and the B 4 C layer has a thickness of 1.93nm.
4. The LaNx/La/B 4 C extreme ultraviolet multilayer film mirror of claim 1, wherein said substrate is a glass substrate or a silicon wafer.
5. The method for manufacturing LaNx/La/B 4 C extreme ultraviolet multilayer film mirror according to any one of claims 1 to 4, comprising the steps of:
Sequentially preparing LaNx layers, la layers and B 4 C layers on a substrate, and repeating the process of sequentially preparing LaNx layers, la layers and B 4 C layers to obtain the LaNx/La/B 4 C extreme ultraviolet multilayer film reflector.
6. The preparation method of the LaNx-layer is characterized by comprising the steps of performing first direct-current magnetron sputtering, wherein the parameters of the first direct-current magnetron sputtering comprise background vacuum which is less than or equal to 1X 10 -4 Pa before the first direct-current magnetron sputtering, a sputtering mode is a glancing target, a target is a lanthanum target, the purity of the target is more than or equal to 99.5%, working gas comprises argon and nitrogen, the volume flow rate of the argon is 15-30 sccm, the volume flow rate of the nitrogen is 5-60 sccm, the volume flow rate ratio of the argon to the nitrogen is 3:2-1:2, the working air pressure is 0.1Pa, and the sputtering power is 60-90W.
7. The preparation method of the La layer according to claim 5, wherein the preparation method of the La layer is second direct current magnetron sputtering, and the parameters of the second direct current magnetron sputtering comprise a sputtering mode of a glancing target, a lanthanum target, the purity of the target is more than or equal to 99.5%, the working gas is argon, the working gas pressure is 0.1-0.12 Pa, and the sputtering power is 15-20W.
8. The preparation method of the B 4 C layer is characterized by comprising the steps of performing third direct current magnetron sputtering, wherein the parameters of the third direct current magnetron sputtering comprise a glancing target, a B 4 C target, purity of the target is greater than or equal to 99.5%, working gas is argon, working pressure is 0.1Pa, and sputtering power is 100-120W.
9. The method of claim 5, wherein the roughness of the substrate is 0.3-0.4 nm.
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| JP2007198782A (en) * | 2006-01-24 | 2007-08-09 | Nikon Corp | Multilayer reflector and exposure apparatus |
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