CN116057470A - 正型感光性树脂组合物及有机el元件间隔壁 - Google Patents
正型感光性树脂组合物及有机el元件间隔壁 Download PDFInfo
- Publication number
- CN116057470A CN116057470A CN202180057981.1A CN202180057981A CN116057470A CN 116057470 A CN116057470 A CN 116057470A CN 202180057981 A CN202180057981 A CN 202180057981A CN 116057470 A CN116057470 A CN 116057470A
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- CN
- China
- Prior art keywords
- group
- resin composition
- acid
- photosensitive resin
- positive photosensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/302—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and two or more oxygen atoms in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/36—Amides or imides
- C08F222/40—Imides, e.g. cyclic imides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Engineering & Computer Science (AREA)
- Materials For Photolithography (AREA)
- Electroluminescent Light Sources (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Optics & Photonics (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020-096931 | 2020-06-03 | ||
| JP2020096931 | 2020-06-03 | ||
| PCT/JP2021/021033 WO2021246445A1 (ja) | 2020-06-03 | 2021-06-02 | ポジ型感光性樹脂組成物、及び有機el素子隔壁 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116057470A true CN116057470A (zh) | 2023-05-02 |
Family
ID=78831151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180057981.1A Pending CN116057470A (zh) | 2020-06-03 | 2021-06-02 | 正型感光性树脂组合物及有机el元件间隔壁 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7789669B2 (zh) |
| KR (2) | KR20250107290A (zh) |
| CN (1) | CN116057470A (zh) |
| TW (1) | TWI775465B (zh) |
| WO (1) | WO2021246445A1 (zh) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1020489A (ja) * | 1996-07-05 | 1998-01-23 | Konica Corp | 感光性組成物 |
| JP2001281440A (ja) | 2000-04-03 | 2001-10-10 | Nippon Zeon Co Ltd | 遮光膜、その製造方法及びその用途 |
| JP2002116536A (ja) | 2000-10-06 | 2002-04-19 | Jsr Corp | 感放射線性樹脂組成物、その硬化物および素子。 |
| JP4699053B2 (ja) * | 2005-03-10 | 2011-06-08 | 東京応化工業株式会社 | カラーフィルタ用感光性樹脂組成物およびカラーフィルタ |
| JP5343664B2 (ja) | 2009-03-30 | 2013-11-13 | Jsr株式会社 | 感放射線性樹脂組成物、有機el表示素子用隔壁及び絶縁膜、並びにその形成方法 |
| JP6054824B2 (ja) * | 2013-08-01 | 2016-12-27 | 富士フイルム株式会社 | 着色組成物、硬化膜、カラーフィルタ、カラーフィルタの製造方法、固体撮像素子および画像表示装置 |
| KR102523847B1 (ko) * | 2015-02-26 | 2023-04-19 | 가부시키가이샤 아데카 | 패턴 형성 방법 및 이를 이용하여 제조한 전자 디바이스 |
| WO2017069172A1 (ja) | 2015-10-21 | 2017-04-27 | 昭和電工株式会社 | ポジ型感光性樹脂組成物 |
| JP6750213B2 (ja) * | 2015-12-08 | 2020-09-02 | Jsr株式会社 | 感放射線性樹脂組成物、硬化膜の形成方法、硬化膜、半導体素子及び表示素子 |
| CN113721316A (zh) * | 2016-01-29 | 2021-11-30 | 富士胶片株式会社 | 组合物、膜、近红外线截止滤波器、层叠体、图案形成方法 |
| JP6978232B2 (ja) * | 2017-06-12 | 2021-12-08 | 東京応化工業株式会社 | 積層体、及び積層体の製造方法 |
| JP7283903B2 (ja) * | 2016-11-09 | 2023-05-30 | 株式会社レゾナック | ポジ型感光性樹脂組成物及びチタンブラック分散液 |
| JP6576386B2 (ja) * | 2017-04-07 | 2019-09-18 | 昭和電工株式会社 | 感光性樹脂組成物 |
| TWI683182B (zh) * | 2017-04-07 | 2020-01-21 | 日商昭和電工股份有限公司 | 感光性樹脂組成物及輻射線微影構造物之製造方法 |
| WO2019150998A1 (ja) * | 2018-01-31 | 2019-08-08 | 富士フイルム株式会社 | ポジ型平版印刷版原版及び平版印刷版の作製方法 |
| JP6797160B2 (ja) * | 2018-09-10 | 2020-12-09 | 昭和電工株式会社 | 感光性樹脂組成物、有機el素子隔壁、及び有機el素子 |
-
2021
- 2021-06-02 TW TW110119955A patent/TWI775465B/zh active
- 2021-06-02 CN CN202180057981.1A patent/CN116057470A/zh active Pending
- 2021-06-02 WO PCT/JP2021/021033 patent/WO2021246445A1/ja not_active Ceased
- 2021-06-02 KR KR1020257021917A patent/KR20250107290A/ko active Pending
- 2021-06-02 JP JP2022528868A patent/JP7789669B2/ja active Active
- 2021-06-02 KR KR1020227041833A patent/KR102834230B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2021246445A1 (zh) | 2021-12-09 |
| KR20230003181A (ko) | 2023-01-05 |
| KR102834230B1 (ko) | 2025-07-15 |
| KR20250107290A (ko) | 2025-07-11 |
| TWI775465B (zh) | 2022-08-21 |
| WO2021246445A1 (ja) | 2021-12-09 |
| TW202210945A (zh) | 2022-03-16 |
| JP7789669B2 (ja) | 2025-12-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: Lishennoco Co.,Ltd. Address before: Tokyo, Japan Applicant before: Showa electrical materials Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230630 Address after: Tokyo, Japan Applicant after: Showa electrical materials Co.,Ltd. Address before: Tokyo, Japan Applicant before: SHOWA DENKO Kabushiki Kaisha |
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| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20231028 Address after: Tokyo, Japan Applicant after: Japan poly Co. Address before: Tokyo, Japan Applicant before: Lishennoco Co.,Ltd. |