CN116005132B - Diffusion mechanism and thin film deposition equipment - Google Patents
Diffusion mechanism and thin film deposition equipmentInfo
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- CN116005132B CN116005132B CN202111229113.5A CN202111229113A CN116005132B CN 116005132 B CN116005132 B CN 116005132B CN 202111229113 A CN202111229113 A CN 202111229113A CN 116005132 B CN116005132 B CN 116005132B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
本发明为一种扩散机构及薄膜沉积机台，主要包括一传输管线、一导流单元、一输入管线及一扩散板，其中输入管线经由传输管线连接扩散板。传输管线具有一传输空间，而导流单元则设置在传输空间内，并将传输空间区分为一第一及一第二传输空间。导流单元的上表面具有一凸起部，凸起部的周围环绕设置复数个导流管线，其中导流管线相对于导流单元的上及下表面倾斜。第一传输空间内的气体或电浆经由导流管线输送至第二传输空间，并在第二传输空间内形成漩涡，以在扩散机构的下方形成分布均匀的气体或电浆。
The present invention relates to a diffusion mechanism and a thin film deposition machine, which mainly include a transmission pipeline, a guide unit, an input pipeline, and a diffusion plate, wherein the input pipeline is connected to the diffusion plate via the transmission pipeline. The transmission pipeline has a transmission space, and the guide unit is arranged in the transmission space and divides the transmission space into a first transmission space and a second transmission space. The upper surface of the guide unit has a protrusion, and a plurality of guide pipelines are arranged around the protrusion, wherein the guide pipelines are inclined relative to the upper and lower surfaces of the guide unit. The gas or plasma in the first transmission space is transported to the second transmission space via the guide pipeline, and a vortex is formed in the second transmission space to form a uniform distribution of gas or plasma below the diffusion mechanism.
Description
Technical Field
The invention relates to a diffusion mechanism and a thin film deposition machine, which can be used for outputting a precursor which is uniformly distributed below the diffusion mechanism.
Background
With the continuous progress of integrated circuit technology, electronic products are currently moving toward the trend of light weight, small size, high performance, high reliability and intelligence. The technology of transistor miniaturization in electronic products is of great importance, and along with the size reduction of transistors, the current transmission time and the energy consumption can be reduced, so that the purposes of rapid operation and energy saving are achieved. In today's miniaturized transistors, some of the critical thin films are almost only a few atoms thick, and atomic layer deposition processes are one of the main techniques for developing these microstructures.
The atomic layer deposition process is a technique of plating substances on a substrate surface layer by layer in the form of single atoms, and the main reactants of the atomic layer deposition have two chemical substances, commonly called precursors, and sequentially transfer the two precursors into a reaction space.
Specifically, the first precursor is first delivered into the reaction space, so that the first precursor is guided to the surface of the substrate, and the chemisorption process is automatically terminated until the surface is saturated. The cleaning gas is delivered into the reaction space, and the gas in the reaction space is pumped out to remove the residual first precursor in the reaction space. And injecting a second precursor into the reaction space, so that the second precursor reacts with the first precursor chemically adsorbed on the surface of the substrate to generate a required film, and the reaction process is completed until the reaction of the first precursor adsorbed on the surface of the substrate is completed. Then, a cleaning gas is injected into the reaction space to remove the residual second precursor in the reaction space. Through repeating the above steps, a thin film can be formed on the substrate.
In practical application, the uniform distribution of the precursor in the reaction space and the temperature of the substrate can have a considerable influence on the uniformity of the atomic layer deposited film, so that the diffusion mechanism is improved as much as possible by each large processing equipment factory to improve the quality of the atomic layer deposition process.
Disclosure of Invention
As described in the prior art, conventional diffusion mechanisms often fail to uniformly distribute the precursor on the substrate, thereby affecting the quality of the film deposited on the substrate surface. Therefore, the invention provides a novel diffusion mechanism and a thin film deposition machine using the same, which can form uniformly distributed precursors on the substrate and/or the bearing plate so as to facilitate forming a thin film with uniform thickness on the surface of the substrate.
An object of the present invention is to provide a diffusion mechanism, which mainly includes a transmission line, a diversion unit and a diffusion plate, wherein the transmission line is in fluid connection with the diffusion plate. The flow guiding unit is arranged in the transmission space of the transmission pipeline and divides the transmission space into a first transmission space and a second transmission space.
The flow guiding unit is provided with a protruding part and a plurality of flow guiding pipelines, wherein the protruding part is arranged on the upper surface of the flow guiding unit, the flow guiding pipelines are arranged around the protruding part, and the flow guiding pipelines incline relative to the upper surface and the lower surface of the flow guiding unit.
The gas or the plasma is transmitted from the first transmission space to the second transmission space through the diversion unit, and after passing through the inclined diversion pipeline, the gas or the plasma forms a vortex in the second transmission space and is transmitted to a diffusion plate connected with the diversion pipeline. Specifically, the flow guiding unit can increase the transmission speed of gas or plasma, and is beneficial to forming uniformly distributed gas or plasma below the diffusion plate so as to form a film with uniform thickness on the surface of the wafer.
The first transmission space of the transmission pipeline is connected with an input pipeline, wherein the input pipeline is arranged at one side of the protruding part and can incline relative to the upper surface of the flow guiding unit, so that gas or plasma entering the first transmission space from the input pipeline can rotate around the protruding part and form a vortex in the first transmission space, and the gas or plasma in the first transmission space can be transmitted to the second transmission space through the inclined flow guiding pipeline.
An object of the present invention is to provide a thin film deposition apparatus, which mainly includes a chamber, a diffusion mechanism and a carrier plate, wherein the carrier plate is disposed in a receiving space of the chamber, and the diffusion mechanism is fluidly connected to the receiving space of the chamber. The carrier plate is used for carrying at least one wafer, and the diffusion mechanism faces the carrier plate and/or the wafer and is used for conveying precursor gas or plasma to the upper part of the wafer so as to be beneficial to depositing a film with uniform thickness on the surface of the wafer.
In order to achieve the above-mentioned object, the present invention provides a diffusion mechanism comprising a transmission line including a transmission space, a flow guiding unit disposed in the transmission space of the transmission line and dividing the transmission space into a first transmission space and a second transmission space, the flow guiding unit comprising a main body portion including a first surface and a second surface, wherein the first surface faces the first transmission space and the second surface faces the second transmission space, a protrusion disposed on the first surface of the main body portion, a plurality of flow guiding lines disposed around the protrusion of the main body portion and communicating with the first surface and the second surface of the main body portion, wherein the flow guiding tube is inclined with respect to the first surface and the second surface of the main body portion, at least one input line fluidly connecting the first transmission space of the transmission line and being used for delivering at least one gas or at least one plasma to the first transmission space, wherein the gas or the plasma entering the first transmission space is delivered to the second transmission space via the plurality of flow guiding lines of the flow guiding unit, and a connection transmission line including a third surface, a second surface and a diffusion plate having a plurality of holes and a plurality of diffusion plates connected to the third surface and the fourth diffusion plate.
The invention provides a thin film deposition machine, which comprises a cavity, a first support, a second support, a first support and a second support, wherein the cavity comprises a containing space; the diffusion mechanism is connected with the cavity and comprises a transmission pipeline, a flow guiding unit, at least one input pipeline, at least one diffusion plate and a diffusion plate, wherein the transmission pipeline comprises a transmission space, the flow guiding unit is arranged in the transmission space of the transmission pipeline and divides the transmission space into a first transmission space and a second transmission space, the flow guiding unit comprises a main body part and a second surface, the first surface faces the first transmission space, the second surface faces the second transmission space, the bulge part is arranged on the first surface of the main body part, the plurality of flow guiding pipelines are arranged around the bulge part of the main body part and are communicated with the first surface and the second surface of the main body part, the flow guiding pipelines are inclined relative to the first surface and the second surface of the main body part, the at least one input pipeline is in fluid connection with the first transmission space of the transmission pipeline and is used for conveying at least one gas or at least one plasma to the first transmission space, the gas or the plasma entering the first transmission space is conveyed to the second transmission space through the plurality of flow guiding pipelines, the connection transmission pipeline comprises a third surface, a fourth surface and a plurality of perforations, the diffusion plate is communicated with the fourth surface and the fourth surface is communicated with the diffusion plate and the second diffusion plate is placed in the space, the diffusion plate is placed in the space, and is placed in the diffusion space, and is in the diffusion-bearing the diffusion plate and is in the space and placed in the space and is in the space and is in the transmission space through the second space.
The diffusion mechanism and the thin film deposition machine table comprise a pipe body and a cover body, wherein the pipe body comprises a bearing part for bearing a flow guiding unit, the flow guiding unit and the pipe body form a second transmission space, the cover body is used for connecting the pipe body and covering the flow guiding unit, and a first transmission space is formed between the cover body and the flow guiding unit.
The cover body comprises a concave part which is connected with the first transmission space, the pipe body comprises a first end and a second end, the first end is connected with the flow guiding unit, and the second end is in fluid connection with the diffusion plate.
The cross section area of the second end of the tube body is larger than that of the first end.
The diffusion mechanism and the thin film deposition machine comprise a diffusion space which is positioned between the third surface of the diffusion plate and the second end of the pipe body, and the sectional area of the diffusion space is gradually enlarged from the second end of the pipe body towards the direction of the third surface of the diffusion plate.
The invention has the beneficial effects that the novel diffusion mechanism and the thin film deposition machine are provided, and the precursor which is uniformly distributed can be formed above the substrate and/or the bearing plate, so that the thin film with uniform thickness can be formed on the surface of the substrate.
Drawings
FIG. 1 is a schematic perspective view of a diffusion mechanism according to an embodiment of the present invention.
FIG. 2 is a perspective view of an embodiment of a deflector element of the diffusion mechanism of the present invention.
Fig. 3 is a schematic perspective view of an embodiment of a flow guiding unit and a cover of a diffusion mechanism of the present invention.
FIG. 4 is a schematic perspective view of an embodiment of a transmission line and a diversion unit of the diffusion mechanism of the present invention.
FIG. 5 is a schematic cross-sectional view of an embodiment of a thin film deposition apparatus employing the diffusion mechanism of the present invention.
FIG. 6 is a schematic diagram of a simulation of the delivery of a gas or plasma by a diffusion mechanism according to the present invention.
The reference numerals illustrate 10-diffusion mechanism, 11-transfer line, 111-cover, 1111-recess, 113-tube, 1131-carrier, 1132-first end, 1134-second end, 12-transfer space, 121-first transfer space, 123-second transfer space, 13-diversion unit, 131-main body, 132-first surface, 133-boss, 134-second surface, 135-diversion line, 1351-first opening, 1353-second opening, 137-annular flange, 14-diffusion space, 15-diffusion plate, 151-third surface, 153-fourth surface, 155-perforation, 17-input line, 19-transfer unit, 191-opening, 20-thin film deposition station, 21-cavity, 22-receiving space, 23-carrier plate, 25-wafer.
Detailed Description
Referring to fig. 1, a cross-sectional view of an embodiment of a diffusion mechanism according to the present invention is shown. As shown in the figure, the diffusion mechanism 10 mainly comprises a transmission line 11, a guiding unit 13, a diffusion plate 15 and at least one input line 17, wherein the input line 17 is fluidly connected to the diffusion plate 15 through the transmission line 11, and the guiding unit 13 is disposed in the transmission line 11.
The transfer line 11 may be a hollow cylinder and includes a transfer space 12. The flow guiding unit 13 is disposed in the transmission space 12 of the transmission pipeline 11, and divides the transmission space 12 into a first transmission space 121 and a second transmission space 123.
Referring to fig. 2, the flow guiding unit 13 includes a main body 131, a protrusion 133 and a plurality of flow guiding lines 135, wherein the main body 131 may be plate-shaped and includes a first surface 132 and a second surface 134, for example, the first surface 132 is an upper surface and the second surface 134 is a lower surface. After the diversion unit 13 is disposed in the transmission space 12 of the transmission line 11, the first surface 132 of the main body 131 faces the first transmission space 121, and the second surface 134 of the main body 131 faces the second transmission space 123.
The protruding portion 133 is disposed on the first surface 132 of the main body 131, for example, the first surface 132 of the main body 131 may be circular, and the protruding portion 133 is disposed on a center or a central area of the first surface 132 and protrudes from the first surface 132 of the main body 131. In one embodiment of the present invention, the protruding portion 133 may be a truncated cone, a cone, and a cylinder.
The plurality of diversion lines 135 are disposed around the protrusion 133 and are in communication with the first surface 132 and the second surface 134 of the main body 131, wherein the diversion lines 135 are inclined with respect to the first surface 132 and the second surface 134 of the main body 131. For example, the diversion line 135 forms a first opening 1351 on the first surface 132 of the main body 131, and forms a second opening 1353 on the second surface 134 of the main body 131, wherein the plurality of first openings 1351 on the first surface 132 surround the protrusion 133. For example, the first opening 1351 and the second opening 1353 may be located on the same virtual circle projection, and form an inclined diversion line 135.
In an embodiment of the present invention, an annular flange 137 may be disposed on the first surface 132 of the main body 131, wherein the annular flange 137 protrudes from the first surface 132 of the main body 131 and is disposed around the protrusion 133 and the first openings 1351 of the plurality of diversion lines 135, for example, the annular flange 137 is disposed at an edge position of the first surface 132 of the main body 131.
As shown in fig. 3, the input line 17 is fluidly connected to the first transfer space 121 of the transfer line 11 and is configured to transfer at least one gas or at least one plasma to the first transfer space 121. The gas or plasma introduced into the first transfer space 121 rotates in the first transfer space 121 centering on the protrusion 133, and is transferred to the second transfer space 123 through the plurality of guide lines 135 of the guide unit 13. For example, the extension line of the input line 17 is not aligned with the center of the boss 133 and is slightly offset to one side of the boss 133 to facilitate the rotation of the gas or plasma entering the first transfer space 121 about the boss 133.
In an embodiment of the present invention, the outlet of the first transfer space 121 where the input line 17 connects the transfer line 11 may be equal to or higher than the top of the boss 133. Further, the input line 17 may be inclined with respect to the first surface 132 of the body part 131 such that the gas or plasma inputted into the first transfer space 121 by the input line 17 rotates downward with the center of the boss 133 and forms a vortex.
In the present invention, the flow guide line 135 is inclined with respect to the first surface 132 of the main body 131, for example, the direction of inclination of the flow guide line 135 is the same as the rotation direction of the gas or plasma in the first transmission space 121, so that the gas or plasma in the first transmission space 121 can be transferred to the second transmission space 123 along the inclined flow guide line 135, and a vortex with the axis of the transmission line 11 as the rotation center is formed in the second transmission space 123.
The vortex formed by the gas or the plasma in the second transfer space 123 has a downward displacement component in addition to the rotation about the axis of the transfer line 11, so that the vortex formed by the gas or the plasma is displaced in the direction of the diffusion plate 15, and detailed simulation will be described in the following embodiments.
In an embodiment of the invention, as shown in fig. 4, the transmission pipeline 11 includes a pipe body 113 and a cover 111, wherein the pipe body 113 includes a bearing portion 1131 for bearing the flow guiding unit 13, for example, the bearing portion 1131 may be a protruding portion located on an inner surface of the pipe body 113, and the bearing portion 1131 may be along a radial direction of the pipe body 113 and protrude toward an axis of the pipe body 113. After the guiding unit 13 is placed on the carrying portion 1131 of the tube 113, the guiding unit 13 and the tube 113 form a second transmission space 123.
The cover 111 is used for connecting the pipe 113 and covering the flow guiding unit 13 arranged on the pipe 113. Specifically, the guiding unit 13 may be placed on the carrying portion 1131 of the tube 113, and then the guiding unit 13 is covered by the cover 111, and the cover 111 is locked on the tube 113 by screws, so as to complete the connection among the cover 111, the tube 113 and the guiding unit 13.
In an embodiment of the present invention, a recess 1111 may be formed on the lower surface of the cover 111, and a first transmission space 121 is formed between the cover 111 and the flow guiding unit 13, for example, the recess 1111 is similar to the boss 133 in shape, and both are truncated cones.
The tube 113 is a hollow tubular member and includes a first end 1132 and a second end 1134, wherein the second end 1134 of the tube may have a larger cross-sectional area than the first end 1132, such that the second transmission space 123 of the tube 113 is a truncated cone. The first end 1132 of the tube 113 is connected to the guiding unit 13, for example, the guiding unit 13 covers the first end 1132 of the tube 113, and the second end 1134 of the tube 113 is fluidly connected to the diffusion plate 15.
The diffusion plate 15 includes a third surface 151 and a fourth surface 153, e.g., the third surface 151 and the fourth surface 153 are upper and lower surfaces, respectively, wherein the third surface 151 of the diffusion plate 15 is in fluid connection with the second transfer space 123 of the transfer line 11. In one embodiment of the present invention, as shown in fig. 1, the third surface 151 of the diffusion plate 15 is fluidly connected to the second end 1134 of the tube 113, and a diffusion space 14 is formed between the third surface 151 of the diffusion plate 15 and the second end 1134 of the tube 113.
Specifically, the transmission line 11 may be connected to the diffusion plate 15 through a transfer unit 19, where the transfer unit 19 is a hollow tube. The upper surface of the transfer unit 19 has a bearing portion, and the pipe body 113 of the transmission pipeline 11 can be placed on the bearing portion of the transfer unit 19, and the transmission pipeline 11 is fixed on the transfer unit 19 through screws, so that the second transmission space 123 of the transmission pipeline 11 is connected with the hollow portion of the transfer unit 19.
The lower surface of the adapter 19 has an opening 191, wherein the opening 191 may be in the shape of a horn, a cone, or a truncated cone. When the adapting unit 19 is connected to the diffusion plate 15, the opening 191 of the adapting unit 19 covers the diffusion plate 15, and forms a diffusion space 14 between the adapting unit 19 and the diffusion plate 15, wherein the cross-sectional area of the diffusion space 14 gradually expands from the second end 1134 of the tube 113 toward the third surface 151 of the diffusion plate 15.
The diffusion plate 15 may be a plate, such as a disk, and includes a plurality of through holes 155, wherein the through holes 155 are in communication with the third surface 151 and the fourth surface 153 of the diffusion plate 15. In practice, the gas or plasma will form a vortex in the second transfer space 123 of the transfer line 11, and is transferred to the diffusion space 14, and then transferred to one side of the fourth surface 153 of the diffusion plate 15 through the through holes 155 of the diffusion plate 15.
Referring to fig. 5, a schematic cross-sectional view of a thin film deposition apparatus using the diffusion mechanism according to an embodiment of the invention is shown. As shown, the diffusion mechanism 10 of the above embodiment of the present invention can be applied to the thin film deposition apparatus 20, wherein the thin film deposition apparatus 20 can be an atomic layer deposition apparatus or a chemical vapor deposition apparatus.
The thin film deposition apparatus 20 mainly comprises a chamber 21, a carrying tray 23 and a diffusion mechanism 10, wherein the carrying tray 23 is disposed in a receiving space 22 of the chamber 21 and is used for carrying at least one wafer 25.
The diffusion mechanism 10 is disposed on the cavity 21 and is fluidly connected to the receiving space 22 of the cavity 21, wherein the diffusion plate 15 of the diffusion mechanism 10 faces the carrier plate 23, e.g., the fourth surface 153 of the diffusion plate 15 is connected to the receiving space 22 of the cavity 21. As shown in fig. 6, the diffusion mechanism 10 may transfer the gas or the plasma to the diffusion plate 15 in a swirling manner, and may be transported to the upper portion of the carrier plate 23 and/or the wafer 25 in the accommodating space 22 through the through holes 155 of the diffusion plate 15. A uniform distribution of gas or plasma is formed over the wafer 25 to facilitate formation of a thin film of uniform thickness on the surface of the wafer 25.
The invention has the advantages that:
a novel diffusion mechanism and a thin film deposition machine are provided, which can form uniformly distributed precursors on a substrate and/or a bearing plate, so as to facilitate forming a thin film with uniform thickness on the surface of the substrate.
The foregoing description is only a preferred embodiment of the present invention and is not intended to limit the scope of the invention, i.e., all equivalent variations and modifications in shape, construction, characteristics and spirit as defined in the claims should be embraced by the claims.
Claims (10)
1. A diffusion mechanism, comprising:
a transfer line including a transfer space;
the flow guiding unit is arranged in the transmission space of the transmission pipeline and divides the transmission space into a first transmission space and a second transmission space, and comprises:
a main body part, which comprises a first surface and a second surface, wherein the first surface faces the first transmission space, and the second surface faces the second transmission space;
a protruding part arranged on the first surface of the main body part;
The guide pipelines are positioned around the protruding part of the main body part and communicated with the first surface and the second surface of the main body part, wherein the guide pipelines are inclined relative to the first surface and the second surface of the main body part;
At least one input line fluidly connected to the first transfer space of the transfer line for delivering at least one gas or at least one plasma to the first transfer space, wherein the gas or the plasma entering the first transfer space is delivered to the second transfer space via the plurality of guide lines of the guide unit, and
A diffusion plate connected to the transmission line, the diffusion plate comprising a third surface, a fourth surface and a plurality of through holes, the through holes being in communication with the third surface and the fourth surface of the diffusion plate, wherein the third surface of the diffusion plate is in fluid connection with the second transmission space, and the gas or the plasma in the second transmission space is transmitted to one side of the fourth surface of the diffusion plate through the plurality of through holes of the diffusion plate;
The input pipeline is inclined relative to the first surface of the main body part, so that the gas or plasma input into the first transmission space by the input pipeline rotates downwards at the center of the protruding part, the gas or plasma is conveyed to the diffusion plate in a vortex mode, is conveyed to the upper part of the bearing plate and/or the wafer through the through holes of the diffusion plate, and forms a uniformly distributed gas or plasma above the wafer so as to form a film with uniform thickness on the surface of the wafer.
2. The diffusion mechanism of claim 1, wherein the transfer line comprises:
a pipe body including a bearing part for bearing the flow guiding unit, wherein the flow guiding unit and the pipe body form the second transmission space, and
The cover body is used for connecting the pipe body and covering the flow guiding unit, wherein the first transmission space is formed between the cover body and the flow guiding unit.
3. The diffusion mechanism of claim 2, wherein the cover comprises a recess connecting the first transfer space, and the tube comprises a first end and a second end, the first end being connected to the flow guiding unit, the second end being fluidly connected to the diffusion plate.
4. A diffusion mechanism according to claim 3, wherein the cross-sectional area of the second end of the tube is greater than the cross-sectional area of the first end.
5. The diffusion mechanism of claim 4, comprising a diffusion space between the third surface of the diffusion plate and the second end of the tube, the diffusion space having a cross-sectional area that gradually expands from the second end of the tube toward the third surface of the diffusion plate.
6. A thin film deposition tool, comprising:
A cavity body comprising an accommodating space;
A diffusion mechanism coupled to the chamber, comprising:
a transfer line including a transfer space;
the flow guiding unit is arranged in the transmission space of the transmission pipeline and divides the transmission space into a first transmission space and a second transmission space, and comprises:
a main body part, which comprises a first surface and a second surface, wherein the first surface faces the first transmission space, and the second surface faces the second transmission space;
a protruding part arranged on the first surface of the main body part;
The guide pipelines are positioned around the protruding part of the main body part and communicated with the first surface and the second surface of the main body part, wherein the guide pipelines are inclined relative to the first surface and the second surface of the main body part;
at least one input line fluidly connected to the first transfer space of the transfer line and configured to deliver at least one gas or at least one plasma to the first transfer space, wherein the gas or the plasma entering the first transfer space is delivered to the second transfer space via the plurality of flow guide lines of the flow guide unit;
a diffusion plate connected to the transmission line, the diffusion plate comprising a third surface, a fourth surface and a plurality of through holes, the through holes being communicated with the third surface and the fourth surface of the diffusion plate, wherein the third surface of the diffusion plate is in fluid connection with the second transmission space, the fourth surface of the diffusion plate is connected with the accommodating space of the cavity, and the gas or the plasma in the second transmission space is transmitted to the accommodating space through the plurality of through holes of the diffusion plate;
a carrying tray, located in the containing space, facing the diffusion mechanism and used for carrying at least one wafer;
The input pipeline is inclined relative to the first surface of the main body part, so that the gas or plasma input into the first transmission space by the input pipeline rotates downwards at the center of the protruding part, the gas or plasma is conveyed to the diffusion plate in a vortex mode, is conveyed to the upper part of the bearing plate and/or the wafer in the accommodating space through the through holes of the diffusion plate, and forms a uniformly distributed gas or plasma above the wafer so as to form a film with uniform thickness on the surface of the wafer.
7. The thin film deposition tool of claim 6, wherein the transfer line comprises:
a pipe body including a bearing part for bearing the flow guiding unit, wherein the flow guiding unit and the pipe body form the second transmission space, and
The cover body is used for connecting the pipe body and covering the flow guiding unit, wherein the first transmission space is formed between the cover body and the flow guiding unit.
8. The thin film deposition apparatus of claim 7, wherein the cover includes a recess connecting the first transfer space, and the tube includes a first end and a second end, the first end being connected to the flow guiding unit, the second end being fluidly connected to the diffusion plate.
9. The thin film deposition tool of claim 8, wherein the cross-sectional area of the second end of the tube is greater than the cross-sectional area of the first end.
10. The thin film deposition apparatus of claim 9, comprising a diffusion space between the third surface of the diffusion plate and the second end of the tube, wherein a cross-sectional area of the diffusion space gradually increases from the second end of the tube toward the third surface of the diffusion plate.
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| CN202111229113.5A CN116005132B (en) | 2021-10-21 | 2021-10-21 | Diffusion mechanism and thin film deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111229113.5A CN116005132B (en) | 2021-10-21 | 2021-10-21 | Diffusion mechanism and thin film deposition equipment |
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| CN116005132B true CN116005132B (en) | 2025-08-01 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586755A (en) * | 2011-01-11 | 2012-07-18 | Snt能源技术有限公司 | Apparatus for chemical vapor deposition |
| KR20130118605A (en) * | 2012-04-20 | 2013-10-30 | 주식회사 원익아이피에스 | Evaporator and apparatus for processing substrate with the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP7119747B2 (en) * | 2018-08-10 | 2022-08-17 | 東京エレクトロン株式会社 | Gas treatment device and gas treatment method |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102586755A (en) * | 2011-01-11 | 2012-07-18 | Snt能源技术有限公司 | Apparatus for chemical vapor deposition |
| KR20130118605A (en) * | 2012-04-20 | 2013-10-30 | 주식회사 원익아이피에스 | Evaporator and apparatus for processing substrate with the same |
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