CN115900996A - A method for measuring the temperature of a semiconductor device - Google Patents

Abstract

The invention discloses a method for measuring the temperature of a semiconductor device, which comprises the following steps: mixing a fluorescent temperature-sensitive material with a dispersant to form a coating solution, and coating the coating solution on an active surface of a device to be detected; The detection device applies a preset bias voltage, and obtains the fluorescence intensity of the fluorescent temperature-sensitive material under the preset bias voltage; obtains the active surface temperature of the device to be detected according to the fluorescence intensity and the temperature-sensitive fluorescence characteristic curve of the fluorescent temperature-sensitive material; The source surface temperature yields the temperature at the space charge region within the device to be inspected. The method in the invention has a wide application range and high temperature detection accuracy.

Description

A method for measuring the temperature of a semiconductor device

technical field

The invention relates to the technical field of semiconductors, in particular to a method for measuring the temperature of a semiconductor device.

Background technique

With the vigorous development of the electronics industry, the requirements of the semiconductor industry for materials and devices are getting higher and higher, and the size of the devices is getting smaller and smaller, which leads to a sharp increase in the power density of the device, and the self-heating effect of the device is obvious, especially for Based on semiconductor devices with space charge regions such as heterojunctions (such as AlGaN/GaN space charge regions), PN junctions, and gold half-junctions, the space charge region will cause a relatively high increase in the temperature inside the semiconductor device, and the device Excessive temperature inside will seriously affect the electrical characteristics of the device and reduce the reliability of the device. Therefore, before the application of the semiconductor device, it is necessary to measure the temperature of the semiconductor device and then evaluate its performance.

However, the existing temperature measurement methods for semiconductor devices have certain disadvantages. For example, infrared thermal imaging measurement is suitable for rough metal surfaces, light reflection thermal imaging measurement is suitable for smooth metallized surface, and standard Raman temperature measurement is suitable for Applied on semiconductor surfaces (not all semiconductor devices have semiconductor surfaces, but semiconductor surfaces, conductive surfaces and insulating surfaces may all have), therefore, provide a method for measuring the temperature of semiconductor devices with a wide range of applications and high measurement accuracy become an urgent problem to be solved.

Contents of the invention

Therefore, in order to solve the above-mentioned problems in the prior art, the present invention provides a temperature measurement method of a semiconductor device that can be applied to any material surface and has high temperature measurement accuracy.

The method for measuring the temperature of a semiconductor device provided by the invention comprises the following steps:

mixing the fluorescent temperature-sensitive material with a dispersant to form a coating solution, and coating the coating solution on the active surface of the device to be detected;

Apply a preset bias voltage to the device to be detected, and obtain the fluorescence intensity of the fluorescent temperature-sensitive material under the preset bias voltage;

According to the fluorescence intensity and the temperature-sensitive fluorescence characteristic curve of the fluorescent temperature-sensitive material, the active surface temperature of the device to be detected is obtained;

The temperature at the space charge region within the device to be inspected is derived from the active surface temperature.

In a possible implementation manner of the present invention, the fluorescent temperature-sensitive material is a composite material of a rare earth material and a temperature-sensitive material.

In a possible implementation of the present invention, the fluorescent temperature-sensitive material is a composite material of Er ³⁺ and Li ₃ Y(VO ₄ ) ₂ , or a composite material of Eu ³⁺ and LuVO ₄ , or a composite material of La ₂ and MgTiO ₆ composite materials.

In a possible implementation manner of the present invention, the temperature-sensitive fluorescence characteristic curve is a curve of the ratio of the fluorescence intensity of the fluorescent temperature-sensitive material at the first excitation wavelength to the second excitation wavelength as a function of temperature.

In a possible implementation of the present invention, the step of obtaining the temperature at the space charge region in the device to be detected according to the active surface temperature specifically includes:

Obtain the heat consumption of the device to be detected from the temperature conduction from the space charge region to the active surface;

The temperature at the space charge region within the device to be inspected is derived from the active surface temperature and the thermal conduction heat dissipation.

In a possible implementation of the present invention, in the step of obtaining the temperature at the space charge region in the device to be detected according to the active surface temperature and the thermal conduction heat consumption, the calculation formula is:

Among them, Q refers to the temperature conduction heat consumption, k refers to the thermal conductivity of the structural layer between the active surface and the space charge region, A refers to the thermal area of the guide, T1 refers to the temperature at the space charge region, T2 refers to the active Surface temperature, d refers to the conduction distance.

In a possible implementation of the present invention, the dispersant is a volatile reagent or deionized water.

In a possible implementation of the present invention, the method for measuring the temperature of a semiconductor device further includes the following steps:

Ultrasonic cleaning is performed on the device to be tested to remove fluorescent temperature-sensitive materials.

The technical scheme provided by the invention has the following advantages:

The method for measuring the temperature of a semiconductor device provided by the present invention is formed by mixing a fluorescent temperature-sensitive material whose fluorescence intensity changes with temperature and a dispersant to form a coating solution, and then coating it on the active surface of the device to be detected (where the electrodes of the device to be detected are located) On the surface of the device to be detected), and then obtain the active surface temperature of the device to be detected by obtaining the fluorescence intensity of the fluorescent temperature-sensitive material after the device to be detected is applied with a preset bias voltage, so as to realize non-contact indirect temperature measurement and get rid of the need to Detect the limitation of the surface material type and shape of the device, have a wide range of applications, and have high temperature measurement accuracy; at the same time, based on the space charge region in the semiconductor device is its core self-hot spot, therefore, the space charge is calculated based on the active surface temperature The temperature at the region can provide accurate data for the subsequent performance evaluation of the device to be tested, and improves the practicability of the method for measuring the temperature of the semiconductor device.

Description of drawings

In order to more clearly illustrate the specific implementation of the present invention or the technical solutions in the prior art, the following will briefly introduce the accompanying drawings that need to be used in the specific implementation or description of the prior art. Obviously, the accompanying drawings in the following description The drawings show some implementations of the present invention, and those skilled in the art can obtain other drawings based on these drawings without any creative work.

Fig. 1 is a method flowchart of a method for measuring the temperature of a semiconductor device provided by an embodiment of the present invention;

Fig. 2 is a schematic diagram of a temperature-sensitive fluorescence characteristic curve of a fluorescent temperature-sensitive material provided by an embodiment of the present invention.

Detailed ways

The technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "upper", "lower", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description. It is not intended to indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and operate in a particular orientation, and thus should not be construed as limiting the invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and should not be construed as indicating or implying relative importance.

Fig. 1 is a flow chart of a method for measuring the temperature of a semiconductor device provided in this embodiment, as shown in Fig. 1, the method includes the following steps:

S100: Mix the fluorescent temperature-sensitive material and the dispersant to form a coating solution, and apply the coating solution on the active surface of the device to be detected.

In this embodiment, the fluorescent temperature-sensitive material refers to a material whose fluorescence intensity changes with temperature (under the same excitation wavelength). Specifically, the fluorescent temperature-sensitive material can be a composite material of a rare earth material and a temperature-sensitive material, such as Er ^{3 +} and Li ₃ Y(VO ₄ ) ₂ composite materials, or Eu ³⁺ and LuVO ₄ composite materials, or La ₂ and MgTiO ₆ composite materials, etc.

In this embodiment, the coating solution formed by mixing the fluorescent temperature-sensitive material and the dispersant can be a suspension. Volatile reagents such as ethanol, anhydrous isopropanol, or deionized water, and when the dispersant is a volatile reagent, the following step S200 is performed after the dispersant volatilizes.

In a specific embodiment, a mixer can be used to mix the fluorescent temperature-sensitive material and the dispersant.

In this embodiment, the active surface refers to the surface where the electrodes of the device to be detected are located, and based on the need to apply a preset bias voltage to the device to be detected in the following step S200, the coating solution in this step is applied to the active surface. Areas other than electrodes on the source surface.

S200: Apply a preset bias voltage to the device to be detected, and obtain the fluorescence intensity of the fluorescent temperature-sensitive material under the preset bias voltage.

In this embodiment, there can be one or more preset bias voltages, the specific number and value of which are set according to the operating voltage of the device to be tested in a specific application scenario, and are not limited here.

During specific implementation, the probe station and the voltage and current source can be built under the microphotoluminescence spectrometer first, and then the device to be detected with the fluorescent temperature-sensitive material is placed under the microscope objective of the microphotoluminescence spectrometer, After focusing successfully, touch the probe to the electrode of the device to be detected, apply a preset bias voltage to the device through a voltage and current source, and then obtain the fluorescence intensity of the fluorescent temperature-sensitive material. At the same time, in this step, one excitation wavelength can be used to excite fluorescence to obtain one fluorescence intensity, or two excitation wavelengths can be used to excite fluorescence to obtain two fluorescence intensities.

S300: Obtain the active surface temperature of the device to be detected according to the fluorescence intensity and the temperature-sensitive fluorescence characteristic curve of the fluorescent temperature-sensitive material.

In this embodiment, the temperature-sensitive fluorescent characteristic curve of the fluorescent temperature-sensitive material can be a curve of the fluorescence intensity of the fluorescent temperature-sensitive material changing with temperature at one excitation wavelength, or it can be a curve of the fluorescent temperature-sensitive material at the second excitation wavelength at two excitation wavelengths. The curve of the ratio of the fluorescence intensity at the first excitation wavelength and the second excitation wavelength as a function of temperature (at this time, in this step, the specific method is also to obtain the temperature-sensitive fluorescence characteristic curve of the device to be detected according to the fluorescence intensity ratio and the temperature-sensitive fluorescence characteristic curve of the fluorescent temperature-sensitive material. active surface temperature). Taking the composite material of Er ³⁺ and Li ₃ Y(VO ₄ ) ₂ as the fluorescent temperature-sensitive material as an example, the first excitation wavelength can be 552nm, and the second excitation wavelength can be 524nm. At this time, the temperature sensitivity of the fluorescent temperature-sensitive material The fluorescence characteristic curve is shown in Fig. 2 .

S400: Obtain the temperature at the space charge region in the device to be detected according to the active surface temperature.

In this embodiment, the space charge region may be a PN junction, a heterojunction, or a gold half junction.

To sum up, the method for measuring the temperature of a semiconductor device provided in this embodiment is to mix a fluorescent temperature-sensitive material whose fluorescence intensity changes with temperature with a dispersant to form a coating solution, and then apply it to the active surface of the device to be detected (to be detected) The surface where the electrode of the device is located), and then obtain the active surface temperature of the device to be detected by obtaining the fluorescence intensity of the fluorescent temperature-sensitive material after the device to be detected is applied with a preset bias voltage, so as to realize non-contact indirect temperature measurement , get rid of the limitations of the surface material type and shape of the device to be detected, and have a wide range of applications and high temperature measurement accuracy; at the same time, based on the space charge region in the semiconductor device is its core self-hot spot, therefore, according to the active surface temperature The calculated temperature at the space charge region can provide accurate data for the subsequent performance evaluation of the device to be detected, and improves the practicability of the method for measuring the temperature of the semiconductor device.

In a possible specific implementation manner of this embodiment, step S400 may specifically include the following steps:

S401: Obtain the heat consumption of the device to be detected by temperature conduction from the space charge region to the active surface.

Specifically, the temperature conduction heat consumption in this step can be measured after the device to be tested is simulated and built.

S402: Obtain the temperature at the space charge region in the device to be detected according to the active surface temperature and the heat consumption by temperature conduction.

Specifically, the temperature at the space charge region in the device to be detected can be calculated according to the following formula:

Among them, Q refers to the temperature conduction heat consumption, k refers to the thermal conductivity of the structural layer between the active surface and the space charge region, A refers to the thermal area of the guide, T1 refers to the temperature at the space charge region, T2 refers to the active Surface temperature, d refers to the conduction distance.

In another possible specific implementation of this embodiment, in order to further reduce the influence of the semiconductor device temperature measurement method on the device to be detected, and finally restore the shape of the device to be detected, based on the above steps S100 to S400 On, as shown in Figure 1, the method may also include the following steps:

S500: Ultrasonic cleaning is performed on the device to be tested to remove fluorescent temperature-sensitive materials.

Apparently, the above-mentioned embodiments are only examples for clear description, rather than limiting the implementation. For those of ordinary skill in the art, other changes or changes in different forms can be made on the basis of the above description. It is not necessary and impossible to exhaustively list all the implementation manners here. However, the obvious changes or changes derived therefrom still fall within the scope of protection of the present invention.

Claims (8)

1. A method of measuring temperature of a semiconductor device, comprising the steps of:

mixing a fluorescent temperature-sensitive material with a dispersant to form a coating solution, and coating the coating solution on the active surface of a device to be detected;

applying a preset bias voltage to the device to be detected, and acquiring the fluorescence intensity of the fluorescent temperature-sensitive material under the preset bias voltage;

obtaining the active surface temperature of the device to be detected according to the fluorescence intensity and the temperature-sensitive fluorescence characteristic curve of the fluorescent temperature-sensitive material;

and obtaining the temperature of the space charge region in the device to be detected according to the active surface temperature.

2. The method for measuring the temperature of a semiconductor device according to claim 1, wherein the fluorescent temperature-sensitive material is a composite material of a rare earth material and a temperature-sensitive material.

3. The method for measuring the temperature of a semiconductor device according to claim 2, wherein the fluorescent temperature-sensitive material is Er ³⁺ And Li ₃ Y(VO ₄ ) ₂ Or Eu, or ³⁺ And LuVO ₄ Or La ₂ And MgTiO ₆ The composite material of (1).

4. The method for measuring temperature of a semiconductor device according to claim 1, wherein the temperature-sensitive fluorescence characteristic curve is a curve in which a ratio of fluorescence intensities of the fluorescent temperature-sensitive material at the first excitation wavelength and the second excitation wavelength changes with temperature.

5. The method according to claim 1, wherein the step of obtaining the temperature of the space charge region in the device to be tested according to the active surface temperature specifically comprises:

acquiring the temperature conduction heat consumption of the device to be detected from the space charge region to the active surface;

and obtaining the temperature of the space charge area in the device to be detected according to the active surface temperature and the temperature conduction heat consumption.

6. The method according to claim 5, wherein in the step of obtaining the temperature at the space charge region in the device to be detected based on the active surface temperature and the temperature conduction heat consumption, the calculation formula is:

wherein Q refers to the temperature conduction heat consumption, k refers to the thermal conductivity of the structural layer between the active surface and the space charge region, a refers to the thermal conduction area, T1 refers to the temperature at the space charge region, T2 refers to the active surface temperature, and d refers to the conduction distance.

7. The method according to claim 1, wherein the dispersant is a volatile agent or deionized water.

8. The method for measuring the temperature of the semiconductor device according to claim 7, further comprising the steps of:

and carrying out ultrasonic cleaning on the device to be detected, and removing the fluorescent temperature-sensitive material.

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