CN115859828B - A terahertz time delay design method based on Anderson localization principle - Google Patents
A terahertz time delay design method based on Anderson localization principle Download PDFInfo
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Abstract
本发明提出一种基于安德森局域化原理的太赫兹时间延迟器设计方法，包括以下步骤；步骤S1、利用电磁场仿真软件找到光子晶体结构模型，作为初始结构；步骤S2、按照晶体晶格的排布划分为10×10个小像素块，通过粒子群算法以“0”、“1”值对像素块的赋值来控制像素块中间介质柱的有无；步骤S3、随机生成介质柱晶格排布，将边界条件设置为完美匹配层边界；步骤S4、进行电磁场仿真，获得计算得到的透射率谱线，将其返回并计算初始FOM值；步骤S5、通过粒子群的自动搜索来产生新的晶格排布并仿真，与上一次FOM值进行比较；步骤S6、重复步骤S5并对比，并输出最终优化后的结构。本发明解决了现有的太赫兹时间延迟器设计困难、设计周期长等问题。
The present invention proposes a terahertz time delay design method based on the Anderson localization principle, comprising the following steps: step S1, using electromagnetic field simulation software to find a photonic crystal structure model as an initial structure; step S2, dividing into 10×10 small pixel blocks according to the arrangement of the crystal lattice, and using the particle swarm algorithm to assign "0" and "1" values to the pixel blocks to control the presence or absence of dielectric columns in the middle of the pixel blocks; step S3, randomly generating a dielectric column lattice arrangement, and setting the boundary condition to the perfect matching layer boundary; step S4, performing electromagnetic field simulation, obtaining the calculated transmittance spectrum, returning it and calculating the initial FOM value; step S5, generating a new lattice arrangement and simulating it through automatic search of the particle swarm, and comparing it with the last FOM value; step S6, repeating step S5 and comparing, and outputting the final optimized structure. The present invention solves the problems of the existing terahertz time delay design difficulty and long design cycle.
Description
Technical Field
The invention relates to the technical field of terahertz devices and numerical calculation, in particular to a design method of a terahertz time delay device based on an Andersen localization principle.
Background
The application of terahertz technology requires not only efficient wave sources and sensitive detectors, but also high-performance functional elements such as filters, modulators, switches, distributors, wavelength division multiplexers, time delays and the like to effectively control terahertz waves.
The terahertz functional devices have a plurality of different types, and the corresponding theories of the devices are independent, so when the terahertz functional device with a certain specific function is needed, firstly, a proper structure is searched in a template library matched with the terahertz functional device according to the specific function to serve as a basic model, if the proper structure cannot be found, a device model is designed according to the mature theory, and then, the characteristic structure parameters in the model are adjusted to finally generate the target device with the required performance. Obviously, this direct design method not only consumes a lot of time to find its corresponding template in the template library, but also requires a lot of experience of analytical modeling and theoretical analysis, which puts high demands on scientists and engineering technicians to complete their design tasks timely and effectively. Therefore, by using a reverse design method which can directly go from a specific function to a device structure, the adjustment stage of model parameters can be omitted, so that the design period of the functional device is shortened, and the aim of efficiently designing the terahertz functional device is fulfilled.
Disclosure of Invention
The invention provides a design method of a terahertz time delay device based on an Andersen localization principle, which solves the problems of difficult design, long design period and the like of the existing terahertz time delay device.
The invention adopts the following technical scheme.
A design method of a terahertz time delay device based on an Andersen localization principle, wherein the delay device comprises a substrate and a medium column fixed on the substrate, a microcavity is formed between part of the medium columns, the residence time of photons in the microcavity is controlled by adjusting the refractive index of the medium columns around the microcavity, and the controllable time delay is realized, and the design method comprises the following steps of;
Step S1, using electromagnetic field simulation software to find a two-dimensional periodic medium column type photon crystal structure model with a wide forbidden band, wherein the model is used as an initial structure, and the total number of medium columns of the initial structure is 10 multiplied by 10;
s2, dividing the two-dimensional photonic crystal lattice arrangement at the substrate into 10 multiplied by 10 small pixel blocks, and controlling the existence of a medium column in the middle of the pixel block by assigning values of 0 and 1 to the pixel blocks through a particle swarm algorithm, wherein 0 represents no medium column inserted, and 1 represents medium column inserted;
s3, randomly generating a group of 10 multiplied by 10 medium column lattice arrangement consisting of '0' pixel points and '1' pixel points, and setting boundary conditions as perfect matching layer boundaries;
S4, selecting an incident wave frequency as a forbidden band center frequency, setting boundary conditions in electromagnetic field simulation software as perfect matching layer boundaries, setting a quality factor evaluation function FOM representing device performance, setting the FOM as sum of root mean square errors of transmittance and set transmittance of a plurality of frequency points with the forbidden band center frequency and equal frequency intervals on two sides, setting a transmittance spectral line as a transmission peak with a fixed bandwidth and a peak value, introducing an initial structure into the electromagnetic field simulation software to perform electromagnetic field simulation, obtaining the calculated transmittance spectral line, returning the calculated transmittance spectral line and calculating an initial FOM value;
s5, generating new lattice arrangement through automatic searching of particle swarms, introducing the changed new structure into electromagnetic field simulation software for simulation, calculating FOM values of the new structure, comparing the FOM values with the previous FOM values, and determining whether the current lattice arrangement is reserved;
And S6, repeating the step S5, comparing the FOM value of the last iteration with the FOM value of the current iteration, and repeating the steps if the FOM value is improved, otherwise, finishing the optimization, and outputting a final optimized structure.
The dielectric column is of a structure with small terahertz loss, and the dielectric column is made of high-resistance silicon.
In the step S1 and the step S2, the frequency interval and the transmission peak position are defined in an objective function representing the device performance by electromagnetic field simulation software, in the assignment of the step S2 to the pixel block, "0" represents that a dielectric pillar is not inserted into the pixel block, and "1" represents that a dielectric pillar is inserted into the pixel block.
And S5, iterative optimization in the step S6, wherein whether the medium column exists on the substrate lattice is controlled through an algorithm, so that the method of adding the medium column is adopted, the photonic crystal with perfect lattice is changed into the photonic crystal with defects, and the photonic crystal with defects generates transmission peaks in a forbidden band, which is also called a defect mode.
When terahertz light with the frequency corresponding to the defect mode is injected into a defect structure formed by the defect mode, the frequency supported by the defect mode is consistent with the frequency of injected photons, so that the photons are localized in the defect structure, and a time delay effect required by a retarder is generated on the photons.
In the time delay effect, photons repeatedly oscillate between the adjacent defect cavity A and the defect cavity B, so that a delay effect is formed, and the photons in the two defect cavities have an attenuation effect and an interactive transmission effect.
The method comprises the steps of injecting femtosecond laser pulses into a defect cavity with photons in a local area, changing the refractive index of the medium column around the microcavity, enabling the local frequency of the defect cavity to deviate due to the laser pulses and generating difference with the frequency of the incident terahertz light, and accordingly enabling the photons in the local area to be released, and achieving the purpose of releasing the photons in a specific time.
The terahertz time delay device controls the residence time of local photons in the defect cavity by adjusting the injection initiation time of the femtosecond laser pulse so as to realize the function of the delay device.
The electromagnetic field simulation software is FDTD Solutions, the perfect matching layer is PERFECTLY MATCHED LAYER, PML for short, and the Binary particle swarm Optimization algorithm is Binary PARTICLE SWARM Optimization, BPSO for short.
According to the design method, the terahertz time delay device is rapidly designed through a BPSO algorithm, the FOM evaluation function is set to be the root mean square error of the transmissivity corresponding to the multipoint frequency and the ideal value, and the particle swarm algorithm outputs the final optimized structure through multiple iterations.
The terahertz time delay device based on the Andersen localization principle is a device which utilizes light to generate multiple scattering in a disordered medium to form photon localization, so that the light is limited in a certain area or path, and the optical path is changed, and the terahertz time-domain spectroscopy (THz-TDS), optical Coherence Tomography (OCT), ultra-fast time resolution spectroscopy and other optical detection fields are widely applied. By changing the lattice arrangement of the two-dimensional medium column type photonic crystal, a random medium with a certain disorder degree is formed, and photons are limited in a certain area or path by utilizing photon localization, so that the function of time delay is realized.
The method can design the terahertz time delay device by utilizing an intelligent algorithm on the basis of the two-dimensional photonic crystal and achieve the required performance.
Compared with the prior art, the invention has the following advantages:
1. The design method disclosed by the invention has higher design efficiency. Firstly, based on a two-dimensional medium column type photon crystal model, whether a lattice center medium column exists or not is controlled according to lattice arrangement of the two-dimensional medium column type photon crystal model, a group of initialized scattering medium column arrangement is randomly generated, an initial structure is guided into FDTD Solutions to perform electromagnetic field simulation, a simulation result is recorded and returned, FOM values (FOM) are calculated, iterative optimization design can be performed by the method, a required scattering medium column type time delay structure can be generated after optimization is completed, the whole optimization direction is judged according to gradient information of variation of a quality factor FOM, a structure adjustment direction can be found more purposefully, a template library is removed in the device design process is avoided by the reverse design method, and time and energy consumption for modeling analysis and theoretical analysis can be greatly saved.
2. The terahertz time delay device disclosed by the invention is small in volume, 4.2 millimeters in side length and 2 millimeters in height, and the whole size can be further optimized according to actual requirements.
3. According to the design method disclosed by the invention, the dielectric column is made of high-resistance silicon or other materials with smaller terahertz loss, so that the integration with the on-chip silicon-based terahertz system is facilitated.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a schematic diagram of stages of a terahertz time delay apparatus design method in an embodiment of the method of the present invention;
FIG. 2 is a schematic diagram of the final structure of the terahertz time delay apparatus (left) and its corresponding transmittance spectrum (right) in an embodiment of the method of the present invention;
fig. 3 is a graph showing the time-dependent changes of electric fields at the AB two-cavity positions when photons matching with local frequencies are injected in the presence or absence of a dielectric column, respectively, in the terahertz time-delay structure in an embodiment of the method of the present invention. The left image is a cavity A, the right image is a cavity B, and the illustration corresponds to the condition without a dielectric column;
FIG. 4 is a graph showing the dynamic change of the internal optical field with time when photons with completely matched local frequencies are injected into the terahertz time delay structure in an embodiment of the method of the present invention;
Fig. 5 is a schematic diagram of a terahertz time-delay versus local photon dynamic release in an embodiment of the method of the present invention.
Detailed Description
As shown in the figure, the design method of the terahertz time delay device based on the Andersen localization principle comprises a substrate and a dielectric column fixed on the substrate, wherein a microcavity is formed among part of the dielectric columns, and the residence time of photons in the microcavity is controlled by adjusting the refractive index of the dielectric column around the microcavity, so that the controllable time delay is realized, and the design method comprises the following steps of;
Step S1, using electromagnetic field simulation software to find a two-dimensional periodic medium column type photon crystal structure model with a wide forbidden band, wherein the model is used as an initial structure, and the total number of medium columns of the initial structure is 10 multiplied by 10;
s2, dividing the two-dimensional photonic crystal lattice arrangement at the substrate into 10 multiplied by 10 small pixel blocks, and controlling the existence of a medium column in the middle of the pixel block by assigning values of 0 and 1 to the pixel blocks through a particle swarm algorithm, wherein 0 represents no medium column inserted, and 1 represents medium column inserted;
s3, randomly generating a group of 10 multiplied by 10 medium column lattice arrangement consisting of '0' pixel points and '1' pixel points, and setting boundary conditions as perfect matching layer boundaries;
S4, selecting an incident wave frequency as a forbidden band center frequency, setting boundary conditions in electromagnetic field simulation software as perfect matching layer boundaries, setting a quality factor evaluation function FOM representing device performance, setting the FOM as sum of root mean square errors of transmittance and set transmittance of a plurality of frequency points with the forbidden band center frequency and equal frequency intervals on two sides, setting a transmittance spectral line as a transmission peak with a fixed bandwidth and a peak value, introducing an initial structure into the electromagnetic field simulation software to perform electromagnetic field simulation, obtaining the calculated transmittance spectral line, returning the calculated transmittance spectral line and calculating an initial FOM value;
s5, generating new lattice arrangement through automatic searching of particle swarms, introducing the changed new structure into electromagnetic field simulation software for simulation, calculating FOM values of the new structure, comparing the FOM values with the previous FOM values, and determining whether the current lattice arrangement is reserved;
And S6, repeating the step S5, comparing the FOM value of the last iteration with the FOM value of the current iteration, and repeating the steps if the FOM value is improved, otherwise, finishing the optimization, and outputting a final optimized structure.
The dielectric column is of a structure with small terahertz loss, and the dielectric column is made of high-resistance silicon.
In the step S1 and the step S2, the frequency interval and the transmission peak position are defined in an objective function representing the device performance by electromagnetic field simulation software, in the assignment of the step S2 to the pixel block, "0" represents that a dielectric pillar is not inserted into the pixel block, and "1" represents that a dielectric pillar is inserted into the pixel block.
And S5, iterative optimization in the step S6, wherein whether the medium column exists on the substrate lattice is controlled through an algorithm, so that the method of adding the medium column is adopted, the photonic crystal with perfect lattice is changed into the photonic crystal with defects, and the photonic crystal with defects generates transmission peaks in a forbidden band, which is also called a defect mode.
When terahertz light with the frequency corresponding to the defect mode is injected into a defect structure formed by the defect mode, the frequency supported by the defect mode is consistent with the frequency of injected photons, so that the photons are localized in the defect structure, and a time delay effect required by a retarder is generated on the photons.
In the time delay effect, photons repeatedly oscillate between the adjacent defect cavity A and the defect cavity B, so that a delay effect is formed, and the photons in the two defect cavities have an attenuation effect and an interactive transmission effect.
The method comprises the steps of injecting femtosecond laser pulses into a defect cavity with photons in a local area, changing the refractive index of the medium column around the microcavity, enabling the local frequency of the defect cavity to deviate due to the laser pulses and generating difference with the frequency of the incident terahertz light, and accordingly enabling the photons in the local area to be released, and achieving the purpose of releasing the photons in a specific time.
The terahertz time delay device controls the residence time of local photons in the defect cavity by adjusting the injection initiation time of the femtosecond laser pulse so as to realize the function of the delay device.
The electromagnetic field simulation software is FDTD Solutions, the perfect matching layer is PERFECTLY MATCHED LAYER, PML for short, and the Binary particle swarm Optimization algorithm is Binary PARTICLE SWARM Optimization, BPSO for short.
According to the design method, the terahertz time delay device is rapidly designed through a BPSO algorithm, the FOM evaluation function is set to be the root mean square error of the transmissivity corresponding to the multipoint frequency and the ideal value, and the particle swarm algorithm outputs the final optimized structure through multiple iterations.
Example 1:
Fig. 1 is a schematic diagram of each stage of a design method of a terahertz time delay device in an embodiment of the method of the present invention. S1 is an initialization stage, a group of 10 multiplied by 10 medium column lattice arrangements consisting of 0 and 1 pixel points are randomly generated, a silicon medium column is inserted in the middle of a 0 representing lattice, a1 representing no medium column is inserted, boundary conditions are set to PML boundaries, at the moment, the initialized medium column lattice arrangement is imported into FDTD Solution simulation software to calculate a corresponding optical response curve, then the initialized medium column lattice arrangement is returned and a quality factor FOM is calculated, S2 is a stage of searching for a certain particle in a certain iteration, the number of particles in the particle group in each iteration is set in the initialization stage, generally 5 particles are set, five corresponding lattice arrangements are globally searched out in the iteration stage, a new structure corresponding to the new structure is imported into FDTD Solution for 5 times, FOM values are respectively calculated, particle search results corresponding to the structure with the best FOM are set to be globally optimal, S3 is a stage of repeatedly searching for the particle group, the globally optimal values and the last globally optimal values are repeatedly compared, if the globally optimal values are not optimal values, the last iteration is reserved, and the last iteration results are better than the last iteration results are obtained, and the last iteration results are retained, if the last iteration results are better than the last iteration results are obtained, and the last iteration results are finally are retained.
Example 2:
Fig. 2 shows the final structure of the terahertz time delay apparatus (left) and its corresponding transmittance spectrum (right) in the method embodiment of the present invention. The frequency interval and the transmission peak position can be defined in an objective function representing the performance of the device, the essence of iterative optimization is that whether a medium column on a crystal lattice exists or not is controlled through an algorithm to change a photonic crystal with a perfect crystal lattice into a defective photonic crystal, the photonic crystal with the defect introduced generates a transmission peak in a forbidden band, which is also called a defect mode, when terahertz light with the frequency corresponding to the defect mode is injected into a defect structure, at the moment, the frequency supported by the defect mode is consistent with the frequency of injected photons, and the photons are localized in the defect, so that a certain time delay effect is generated on the photons. As the two defect cavities a and B are formed in the left figure, photons will oscillate repeatedly between the two cavities, thus forming a delay effect.
Example 3:
Fig. 3 is a graph showing the time-dependent electric field at the AB two-cavity position when photons matching with local frequencies are injected in the terahertz time-delay structure in the embodiment of the method of the present invention, respectively, in the presence or absence of a dielectric column. The left image is the A cavity, the right image is the B cavity, and the illustration corresponds to the condition without the dielectric column. The center frequency of the injected photon at this point was 0.27THz. It can be seen from the figure that the duration of the electric field component at the AB two-cavity position is only around 0.07ns without a dielectric pillar (i.e. light passes through the blank area corresponding to the device size) (inset). Therefore, the device may be ignored in calculating a delay time for photons. In the presence of a dielectric pillar, one time delay of the AB two cavities for photons is about 0.7ns, and there is some cross-transfer effect of photons in both cavities in addition to some attenuation.
Example 4:
FIG. 4 is a graph showing the dynamic change of the internal optical field with time when photons with completely matched local frequencies are injected into the terahertz time-delay structure in an embodiment of the method of the present invention. It can be seen from the figure that at the AB two-cavity location, the photons are perfectly localized in the defective microcavities. At 0.14ns, most of the photons are localized in the B cavity, and over time, at 0.23ns, photons are gradually coupled into the a cavity, except for a portion of the attenuation, and at 0.33ns, photons are gradually coupled into the B cavity. After a number of cycles, the photons at 0.7ns are eventually completely absorbed by the perfectly matching layer around the structure, including the portion of the photons that decays during dynamic transfer.
Example 5:
Fig. 5 is a schematic diagram of a terahertz time-delay versus local-area photon dynamic release in an embodiment of the method of the present invention. In the figure, by injecting femtosecond laser pulses into a defect cavity with a certain localized photon, the refractive index of a medium column around the microcavity can change along with the irradiation of the laser pulses, so that the localized frequency of the defect cavity is shifted, the mode supported by a defect mode is inconsistent with the incident light frequency, and the localized photon can be released. Therefore, by adjusting the injection initiation time of the femtosecond pulse, the terahertz time delay can control the residence time of the local photon in the defect, thereby realizing the function of the delay.
The foregoing description is only of the preferred embodiments of the invention, and all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
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| CN101387763A (en) * | 2008-10-22 | 2009-03-18 | 中国科学院长春光学精密机械与物理研究所 | Optical signal delay device based on photonic crystal structure |
| CN111122502A (en) * | 2019-12-31 | 2020-05-08 | 长春理工大学 | Particle swarm optimization method for refractive index of glue permeation interface based on pulse terahertz technology |
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| CN101387763A (en) * | 2008-10-22 | 2009-03-18 | 中国科学院长春光学精密机械与物理研究所 | Optical signal delay device based on photonic crystal structure |
| CN111122502A (en) * | 2019-12-31 | 2020-05-08 | 长春理工大学 | Particle swarm optimization method for refractive index of glue permeation interface based on pulse terahertz technology |
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